JP2012149289A - Aluminum foil for printed circuit - Google Patents
Aluminum foil for printed circuit Download PDFInfo
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- JP2012149289A JP2012149289A JP2011007618A JP2011007618A JP2012149289A JP 2012149289 A JP2012149289 A JP 2012149289A JP 2011007618 A JP2011007618 A JP 2011007618A JP 2011007618 A JP2011007618 A JP 2011007618A JP 2012149289 A JP2012149289 A JP 2012149289A
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- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 39
- 239000011888 foil Substances 0.000 title claims abstract description 35
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 24
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 15
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 13
- 229910000765 intermetallic Inorganic materials 0.000 claims description 25
- 229910052742 iron Inorganic materials 0.000 claims description 21
- 239000012535 impurity Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 abstract description 28
- 239000011159 matrix material Substances 0.000 abstract description 24
- 150000001875 compounds Chemical class 0.000 abstract description 7
- 229910052802 copper Inorganic materials 0.000 abstract description 4
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 17
- 239000002244 precipitate Substances 0.000 description 8
- 238000011282 treatment Methods 0.000 description 8
- 238000004090 dissolution Methods 0.000 description 7
- 238000000265 homogenisation Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000005097 cold rolling Methods 0.000 description 3
- 238000009749 continuous casting Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000005096 rolling process Methods 0.000 description 3
- 229910018507 Al—Ni Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005098 hot rolling Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000010019 resist printing Methods 0.000 description 1
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- Parts Printed On Printed Circuit Boards (AREA)
Abstract
Description
本発明は、電気機器や電子機器の電気回路に使用することができる印刷回路用アルミニウム箔に関するものである。 The present invention relates to an aluminum foil for printed circuit that can be used in an electric circuit of an electric device or an electronic device.
電気機器や電子機器に用いられる印刷回路板として、絶縁性樹脂フィルム上にアルミニウムからなる回路パターンが形成されているものが知られている。この印刷回路板は、絶縁性樹脂フィルムにアルミニウム箔を接着剤により貼り合せ、次いで、アルミニウム箔の表面に感光性樹脂を塗布し、感光性樹脂が所定の回路パターンを形成するように露光する。そして、回路パターン外の部分の感光性樹脂を取り除く。感光性樹脂を取り除いた部分は、アルミニウム箔が露出しているので、この露出したアルミニウム箔部分を、化学的なエッチングによって溶解させる。溶解除去されなかったアルミニウム箔部分によって、印刷回路板が形成される。
近年、印刷回路板の用途としてＩＣカードやＩＣタグが増加し、更には小型電子機器にも使用されるようになり、回路の高密度化の要求が高まっている。したがって、回路パターンの間隔が狭くなるのに伴い回路パターンに沿って稜線がギザギザにならずに滑らかにエッチングされること、つまり鮮鋭なエッチングが行われることが強く要求される。鮮鋭なエッチングを施すことができない場合には、隣接する当該稜線同士が接触することで、回路が切断して通電不能になるし、当該稜線に凹凸が生じると、回路パターンとしての精度を劣化させる。
2. Description of the Related Art Known printed circuit boards used for electrical and electronic devices are those in which a circuit pattern made of aluminum is formed on an insulating resin film. In this printed circuit board, an aluminum foil is bonded to an insulating resin film with an adhesive, and then a photosensitive resin is applied to the surface of the aluminum foil and exposed so that the photosensitive resin forms a predetermined circuit pattern. Then, the photosensitive resin outside the circuit pattern is removed. Since the aluminum foil is exposed at the portion where the photosensitive resin is removed, the exposed aluminum foil portion is dissolved by chemical etching. A printed circuit board is formed by the aluminum foil portion that has not been dissolved and removed.
In recent years, IC cards and IC tags have been used as printed circuit boards, and further, they have been used in small electronic devices, and the demand for higher circuit density is increasing. Therefore, as the interval between circuit patterns becomes narrow, it is strongly required that the ridge lines be smoothly etched along the circuit pattern without being jagged, that is, sharp etching is performed. When sharp etching cannot be performed, the adjacent ridge lines come into contact with each other, so that the circuit is cut and cannot be energized. If the ridge lines are uneven, the accuracy of the circuit pattern is deteriorated. .
印刷回路板に用いられるアルミニウム箔は電気抵抗や化学溶解性の点から、JIS H 4160 1N30で規定される化学組成（Si＋Fe＝0.7％以下、Cu＝0.1％以下、Mn＝0.05％以下、Mg＝0.05％以下、Zn＝0.05％以下、Al＝99.30％以上、その他不可避不純物よりなる）のものが使用されている。また、化学溶解性を向上させるためにＦｅを多く含有させることは公知である。 Aluminum foil used for printed circuit boards has chemical composition (Si + Fe = 0.7% or less, Cu = 0.1% or less, Mn = 0.05% or less, Mg = stipulated in JIS H 4160 1N30 from the viewpoint of electrical resistance or chemical solubility. 0.05% or less, Zn = 0.05% or less, Al = 99.30% or more, and other inevitable impurities) are used. In addition, it is known to contain a large amount of Fe in order to improve chemical solubility.
ところが、１Ｎ３０材はもちろん、Ｆｅを積極的に増量したアルミニウム箔では、Ｆｅの含有量が多いため析出物が箔の全面に多数存在し、この析出物がエッチング時の起点となり、溶解性を向上させる。しかし、この析出物が回路パターンの稜線部分に存在していると、その部分で溶解が他の部分よりも優先的に進行するので、鮮鋭なエッチングを行うことができない。そこで、析出物量を少なくして純度を高めることが考えられるが、アルミニウム箔全体としての化学溶解性が確保できなくなる。 However, in the case of 1N30 material as well as aluminum foil with an increased amount of Fe, the Fe content is large, so there are many precipitates on the entire surface of the foil, and these precipitates become the starting point during etching, improving the solubility. Let However, if this precipitate is present in the edge portion of the circuit pattern, the dissolution proceeds preferentially in that portion over the other portions, so that sharp etching cannot be performed. Therefore, it is conceivable to increase the purity by reducing the amount of precipitates, but it becomes impossible to ensure the chemical solubility of the entire aluminum foil.
そこで本発明者は、特許文献１において、高い化学溶解性が確保されるとともに鮮鋭なエッチングを行うことのできる印刷回路用アルミニウム箔を提案した。このアルミニウム箔は、質量％で、Ｓｉ：０．０１〜０．２％、Ｆｅ：０．０１〜０．５％、Ｃｕ：０．０１〜０．０５％、Ｎｉ：０．００２〜０．０５％を含有し、残部がＡｌと不可避不純物からなる。このアルミニウム箔は、Ｎｉを含有させることにより、Ａｌとの化合物（Ａｌ−Ｎｉ金属間化合物、Ａｌ−Ｆｅ−Ｎｉ金属間化合物）をマトリックス中に析出させる。この化合物は、マトリックスに対し電位的に貴であることから、化学溶解性を高める作用がある。なお、本願において、特別に言及しない限り、％は質量％を意味するものとする。 Therefore, the present inventor has proposed an aluminum foil for printed circuit in Patent Document 1 that ensures high chemical solubility and can perform sharp etching. This aluminum foil is in mass%, Si: 0.01-0.2%, Fe: 0.01-0.5%, Cu: 0.01-0.05%, Ni: 0.002-0. It contains 05% and the balance consists of Al and inevitable impurities. In this aluminum foil, a compound with Al (Al—Ni intermetallic compound, Al—Fe—Ni intermetallic compound) is precipitated in the matrix by containing Ni. Since this compound is noble with respect to the matrix, it has an effect of increasing chemical solubility. In the present application, unless otherwise specified,% means mass%.
特許文献１で提案したアルミニウム箔は、それまでの箔に比べて高い化学溶解性が確保されるとともに鮮鋭なエッチングを行うことのできる、という効果を得ることができるが、化学溶解性については、生産効率向上の観点から、さらなる向上が要求されている。
そこで本発明は、より高い化学溶解性が確保されるとともに鮮鋭なエッチングを行うことのできる印刷回路用アルミニウム箔を提供することを目的とする。
The aluminum foil proposed in Patent Document 1 can obtain the effect that high chemical solubility is ensured and can be sharply etched compared to the foils so far, but for chemical solubility, Further improvement is required from the viewpoint of improving production efficiency.
Therefore, an object of the present invention is to provide an aluminum foil for a printed circuit that can ensure higher chemical solubility and perform sharp etching.
本発明の目的を達成するために、高い化学溶解性を確保する上で特許文献１が抱える障壁について検討した。その結果、特許文献１は、マトリックス中に固溶し易いＣｕを０．０１〜０．０５％の範囲で含有させることでマトリックスの電位を高め、合金全体を均一にエッチングする作用を期待した。ところが、ＡｌとＮｉを含む電位的に貴な化合物が存在していることを前提にすれば、マトリックスの電位を上げることが溶解性を向上する上でベストな選択にはならないおそれがある。そこで、本発明では、引用文献１とは異なり、マトリックスの電位を下げることで、ＡｌとＮｉを含む化合物とマトリックスとの電位差を大きくし、アルミニウム箔の溶解性を向上することにした。 In order to achieve the object of the present invention, the barriers of Patent Document 1 were examined in securing high chemical solubility. As a result, Patent Document 1 expected to increase the potential of the matrix by containing Cu, which is easily dissolved in the matrix, in the range of 0.01 to 0.05% and uniformly etch the entire alloy. However, assuming that there are potential noble compounds containing Al and Ni, raising the potential of the matrix may not be the best choice for improving solubility. Therefore, in the present invention, unlike the cited document 1, by reducing the potential of the matrix, the potential difference between the compound containing Al and Ni and the matrix is increased, thereby improving the solubility of the aluminum foil.
すなわち本発明の印刷回路用アルミニウム箔は、
Ｓｉ：０．０１〜０．２％、
Ｆｅ：０．０１〜０．７％、
Ｃｕ：０．０００５〜０．０１％、
Ｎｉ：０．００２〜０．１％、
Ｚｎ及びＧａの一種又は二種（合計）：０．００２〜０．１％、を含有し、
残部がＡｌと不可避不純物からなることを特徴とする。
That is, the aluminum foil for printed circuits of the present invention is
Si: 0.01 to 0.2%,
Fe: 0.01 to 0.7%,
Cu: 0.0005 to 0.01%,
Ni: 0.002 to 0.1%,
1 type or 2 types (total) of Zn and Ga: 0.002-0.1%,
The balance is made of Al and inevitable impurities.
本発明のアルミニウム箔において、Ａｌ−（Ｆｅ，Ｎｉ）系金属間化合物が、１０４〜１０６個／ｃｍ２の密度で分散していることが好ましい。本発明においてＡｌ−（Ｆｅ，Ｎｉ）系金属間化合物とは、Ａｌ−Ｎｉ金属間化合物とＡｌ−Ｆｅ−Ｎｉ金属間化合物の総称である。 In the aluminum foil of the present invention, it is preferable that Al— (Fe, Ni) -based intermetallic compounds are dispersed at a density of 10 4 to 10 6 pieces / cm 2 . In the present invention, the Al— (Fe, Ni) -based intermetallic compound is a general term for an Al—Ni intermetallic compound and an Al—Fe—Ni intermetallic compound.
本発明によれば、より高い化学溶解性が確保されるとともに鮮鋭なエッチングを行うことのできるアルミニウム箔を提供できる。 According to the present invention, it is possible to provide an aluminum foil that ensures higher chemical solubility and can perform sharp etching.
以下、実施の形態に基づいてこの発明を詳細に説明する。
本発明のアルミニウム箔は、上述したように、Ｓｉ：０．０１〜０．２％、Ｆｅ：０．０１〜０．７％、Ｃｕ：０．０００５〜０．０１％、Ｎｉ：０．００２〜０．１％、Ｚｎ及びＧａの一種又は二種（合計）：０．００２〜０．１％、を含有し、残部がＡｌと不可避不純物からなる組成を有している。この中で、Ｃｕ含有量と、Ｚｎ及びＧａの一種又は二種を含有することが、マトリックスの電位を下げることに寄与する。以下、この点も含め本発明における元素の限定理由について説明する。
Hereinafter, the present invention will be described in detail based on embodiments.
As described above, the aluminum foil of the present invention has Si: 0.01 to 0.2%, Fe: 0.01 to 0.7%, Cu: 0.0005 to 0.01%, Ni: 0.002. ˜0.1%, one or two of Zn and Ga (total): 0.002 to 0.1%, with the balance being composed of Al and inevitable impurities. Among these, the Cu content and the inclusion of one or two of Zn and Ga contribute to lowering the matrix potential. Hereinafter, the reason for limitation of elements in the present invention including this point will be described.
［Ｓｉ：０．０１〜０．２％］
Ｓｉは、化学溶解性を向上させるために含有させる。
ただし、Ｓｉ含有量が少なくなると、相対的な純度が高くなり引張り強度が低下するとともに、十分な化学溶解性が確保できなくなる。また、Ｓｉ含有量が多くなると、Ａｌ−（Ｆｅ，Ｎｉ）系金属間化合物の形成が過剰になり、回路パターンに沿った鮮鋭なエッチングができなくなる。したがって、本願発明では、Ｓｉ：０．０１〜０．２％と規定する。
Ｓｉ含有量は、好ましくは０．０２〜０．２％であり、より好ましくは０．０３〜０．１５％である。
[Si: 0.01 to 0.2%]
Si is contained in order to improve chemical solubility.
However, when the Si content decreases, the relative purity increases and the tensile strength decreases, and sufficient chemical solubility cannot be ensured. Further, when the Si content increases, the formation of Al- (Fe, Ni) intermetallic compounds becomes excessive, and sharp etching along the circuit pattern cannot be performed. Therefore, in the present invention, it is defined as Si: 0.01 to 0.2%.
Si content becomes like this. Preferably it is 0.02-0.2%, More preferably, it is 0.03-0.15%.
［Ｆｅ：０．０１〜０．７％］
Ｆｅは、化学溶解性を向上させるために含有させる。
ただし、Ｆｅ含有量が少なくなると、相対的な純度が高くなり引張り強度が低下するとともに、十分な化学溶解性が確保できなくなる。また、Ｆｅ含有量が多くなると、Ａｌ−（Ｆｅ，Ｎｉ）系金属間化合物の形成が過剰になり、回路パターンに沿った鮮鋭なエッチングができなくなる。したがって、本願発明では、Ｆｅ：０．０１〜０．７％と規定する。
Ｆｅ含有量は、好ましくは０．０２〜０．５％であり、より好ましくは０．０２〜０．３％である。
[Fe: 0.01 to 0.7%]
Fe is contained in order to improve chemical solubility.
However, when the Fe content decreases, the relative purity increases and the tensile strength decreases, and sufficient chemical solubility cannot be ensured. Further, when the Fe content increases, the formation of Al- (Fe, Ni) intermetallic compounds becomes excessive, and sharp etching along the circuit pattern cannot be performed. Therefore, in this invention, it defines with Fe: 0.01-0.7%.
Fe content becomes like this. Preferably it is 0.02-0.5%, More preferably, it is 0.02-0.3%.
［Ｃｕ：０．０００５〜０．０１％］
Ｃｕはマトリックス中に固溶し易く、マトリックスの電位を高めてしまう。そうすると、エッチング時にカソードサイトとして機能するＡｌ−（Ｆｅ，Ｎｉ）系金属間化合物とアノードサイトとして機能するマトリックスとの電位差が小さくなるので、良好な化学溶解性が確保できなくなる。そこで本発明では、Ｃｕの含有量を０．０１％以下に規制する。Ｃｕの含有量は少ないほど化学溶解性にとって好ましいが、著しく低い値にするにはコストアップになるとともに、それに見合う化学溶解性の向上効果を得ることができないので、下限を０．０００５％にする。
Ｃｕ含有量は、好ましくは０．０００５〜０．００７％であり、より好ましくは０．０００５〜０．００５％である。
[Cu: 0.0005 to 0.01%]
Cu easily dissolves in the matrix and raises the potential of the matrix. As a result, the potential difference between the Al— (Fe, Ni) -based intermetallic compound that functions as a cathode site during etching and the matrix that functions as an anode site becomes small, so that good chemical solubility cannot be ensured. Therefore, in the present invention, the Cu content is restricted to 0.01% or less. The lower the Cu content, the better for the chemical solubility, but the cost is lowered to make it extremely low, and the improvement effect of the chemical solubility commensurate with it cannot be obtained, so the lower limit is made 0.0005%. .
Cu content becomes like this. Preferably it is 0.0005 to 0.007%, More preferably, it is 0.0005 to 0.005%.
［Ｎｉ：０．００２〜０．０５％］
ＮｉはＡｌ−（Ｆｅ、Ｎｉ）系金属間化合物を形成し、エッチング時にカソードサイトとして作用する。この金属間化合物はマトリックスに対して電位的に貴であることから、化学溶解性を高める。この効果を得るために、本発明では０．００２％以上含有させる。しかし、含有量が多くなりすぎると、形成される金属間化合物が粗大となり、かつ、そのような化合物が数多く析出することで、化学溶解性が高くなり過ぎ、局部溶解を引き起こすおそれがある。そこで、Ｎｉの含有量は、０．０５％以下にする。
Ｎｉ含有量は、好ましくは０．００３〜０．０３％であり、より好ましくは０．００５〜０．０１５％である。
[Ni: 0.002 to 0.05%]
Ni forms an Al— (Fe, Ni) -based intermetallic compound and acts as a cathode site during etching. Since this intermetallic compound is noble with respect to the matrix, it increases chemical solubility. In order to acquire this effect, 0.002% or more is contained in the present invention. However, if the content is too large, the formed intermetallic compound becomes coarse, and a large number of such compounds are precipitated, so that the chemical solubility becomes too high and local dissolution may occur. Therefore, the Ni content is 0.05% or less.
The Ni content is preferably 0.003 to 0.03%, more preferably 0.005 to 0.015%.
［Ｚｎ及びＧａの一種又は二種：０．００２〜０．１％］
Ｚｎ及びＧａはともに、マトリックスに固溶するとマトリックスの電位を下げる作用がある。したがって、Ｚｎ及びＧａを含有させることにより、エッチング時にカソードサイトとして機能するＡｌ−（Ｆｅ、Ｎｉ）系金属間化合物とマトリックスとの電位差を広げ、化学溶解性を向上させる。前述したように、Ｃｕの含有量を低減することでも、Ａｌ−（Ｆｅ、Ｎｉ）系金属間化合物とマトリックスとの電位差を広げることができるが、Ｃｕの低減による電位差の拡大には限界がある一方、さらなる化学溶解性の向上のために本発明はＺｎ及びＧａの一種または二種を含有させる。
Ａｌ−（Ｆｅ、Ｎｉ）系金属間化合物とマトリックスとの電位差を広げる作用を十分に得るために、Ｚｎ及びＧａは、一種または二種の合計で、０．００２％以上含有させる。一方で、Ｚｎ及びＧａを多く含有させすぎると、合金の純度が低下することにより、化学溶解性が高くなり過ぎ、エッチング時に全面溶解を生じてしまうおそれがある。そこで、Ｚｎ及びＧａは、一種または二種の合計で、０．１％以下にする。
Ｚｎ及びＧａの一種又は二種の含有量は、好ましくは０．００５〜０．０７％であり、より好ましくは０．０１〜０．０５％である。
[One or two kinds of Zn and Ga: 0.002 to 0.1%]
Both Zn and Ga act to lower the potential of the matrix when dissolved in the matrix. Therefore, by containing Zn and Ga, the potential difference between the Al— (Fe, Ni) -based intermetallic compound that functions as a cathode site during etching and the matrix is widened, and the chemical solubility is improved. As described above, the potential difference between the Al— (Fe, Ni) -based intermetallic compound and the matrix can also be increased by reducing the Cu content, but there is a limit to the increase in potential difference due to the reduction of Cu. On the other hand, in order to further improve the chemical solubility, the present invention contains one or two of Zn and Ga.
In order to sufficiently obtain an action of widening the potential difference between the Al— (Fe, Ni) -based intermetallic compound and the matrix, Zn and Ga are contained in a total of 0.002% or more in one or two kinds. On the other hand, when too much Zn and Ga are contained, the purity of the alloy is lowered, so that the chemical solubility becomes too high, and there is a possibility that the entire surface is dissolved during etching. Therefore, Zn and Ga are one or a total of two or less and are made 0.1% or less.
The content of one or two of Zn and Ga is preferably 0.005 to 0.07%, more preferably 0.01 to 0.05%.
［析出物密度：１０４〜１０６個／ｃｍ２］
本発明においてカソードサイトとして機能するＡｌ−（Ｆｅ，Ｎｉ）系金属間化合物からなる析出物は、化学溶解性を向上させる。
この効果を得るための十分な量のカソードサイトを確保するには、Ａｌ−（Ｆｅ，Ｎｉ）系金属間化合物が１０４個／ｃｍ２以上存在していることが好ましい。ただし、Ａｌ−（Ｆｅ，Ｎｉ）系金属間化合物がマトリックス中に分散する量が多くなりすぎると、回路パターンの稜線にＡｌ−（Ｆｅ，Ｎｉ）系金属間化合物が存在する確率が高くなる。そうすると鮮鋭なエッチングが容易でなくなるので、本発明において、Ａｌ−（Ｆｅ，Ｎｉ）系金属間化合物は１０６個／ｃｍ２以下の範囲でマトリックス中に分散されていることが好ましい。
[Precipitate density: 10 4 to 10 6 pieces / cm 2 ]
In the present invention, a precipitate made of an Al— (Fe, Ni) -based intermetallic compound that functions as a cathode site improves chemical solubility.
In order to secure a sufficient amount of cathode sites for obtaining this effect, it is preferable that 10 4 pieces / cm 2 or more of Al— (Fe, Ni) -based intermetallic compound exist. However, if the amount of the Al— (Fe, Ni) -based intermetallic compound dispersed in the matrix becomes too large, the probability that the Al— (Fe, Ni) -based intermetallic compound exists on the edge of the circuit pattern increases. Then, since sharp etching becomes difficult, in the present invention, it is preferable that Al— (Fe, Ni) intermetallic compounds are dispersed in the matrix in the range of 10 6 pieces / cm 2 or less.
［アルミニウム箔の製造方法］
本発明のアルミニウム箔は、常法により製造することができるので、要旨のみ以下に説明する。
通常は、上記成分に調整した鋳塊を半連続鋳造法、連続鋳造法等により溶製する。該溶製後には、４８０〜５５０℃の温度範囲で１時間以上保持する均質化処理を施すのが好ましい。この均質化処理により、Ａｌ−（Ｆｅ、Ｎｉ）系金属間化合物が均一に分散され、比較的少量の当該析出物によって化学溶解性が確保される。
均質化処理における加熱温度が４８０℃未満又は保持時間が１時間未満では、Ａｌ−（Ｆｅ、Ｎｉ）系金属間化合物の析出分布が不均一となり、エッチングの際に局部溶解を起こすおそれがある。一方、均質化処理における加熱温度が５５０℃を超えるとＡｌ−（Ｆｅ、Ｎｉ）系金属間化合の再固溶が生じ、好ましくない。また、保持時間が長くなってもエネルギの浪費になるだけであるから、均質化処理の時間は１０時間以下にするのが好ましい。
[Method for producing aluminum foil]
Since the aluminum foil of this invention can be manufactured by a conventional method, only a summary is demonstrated below.
Usually, the ingot adjusted to the above components is melted by a semi-continuous casting method, a continuous casting method or the like. After the melting, it is preferable to perform a homogenization treatment for holding at a temperature range of 480 to 550 ° C. for 1 hour or longer. By this homogenization treatment, the Al— (Fe, Ni) intermetallic compound is uniformly dispersed, and chemical solubility is ensured by a relatively small amount of the precipitate.
When the heating temperature in the homogenization treatment is less than 480 ° C. or the holding time is less than 1 hour, the precipitation distribution of the Al— (Fe, Ni) -based intermetallic compound becomes non-uniform, which may cause local dissolution during etching. On the other hand, when the heating temperature in the homogenization treatment exceeds 550 ° C., re-dissolution of the Al— (Fe, Ni) -based intermetallic compound occurs, which is not preferable. In addition, even if the holding time is long, only energy is wasted. Therefore, the time for the homogenization treatment is preferably 10 hours or less.
均質化処理を施した後に、圧延に供する。圧延は、連続鋳造圧延法のような場合を除けば、通常は熱間圧延と冷間圧延とを順に行われる。各圧延工程の間に適宜の処理、特に中間焼鈍や最終焼鈍などの熱処理を必要に応じて施す。冷間圧延により所望の厚さにされたアルミニウム箔は、印刷回路の形成に供される。 After the homogenization treatment, it is subjected to rolling. Usually, hot rolling and cold rolling are performed in order except for the case of continuous casting rolling. Appropriate treatments, particularly intermediate annealing and final annealing, are performed as necessary during each rolling step. The aluminum foil having a desired thickness by cold rolling is used for forming a printed circuit.
冷間圧延されたアルミニウム箔は、その後、印刷回路の形成に用いられるものであるが、印刷回路の形成も常法により行うことができる。先ず、上記アルミニウム箔を適宜の材料の回路ベース材に貼り合わせ、このアルミニウム箔に対し、所望の回路パターンに従ってエッチングを施して回路を形成する。このエッチングの際の方法、条件も本発明において特に限定されるものではない。 The cold-rolled aluminum foil is then used for forming a printed circuit, but the printed circuit can also be formed by a conventional method. First, the aluminum foil is bonded to a circuit base material of an appropriate material, and the aluminum foil is etched according to a desired circuit pattern to form a circuit. The method and conditions for this etching are not particularly limited in the present invention.
表１に示す組成に調整されたスラブを常法により溶製し、このスラブに５３０℃で２時間保持する条件の均質化処理を実施した。その後、熱間圧延により７ｍｍ厚まで圧延し、更に冷間圧延により５０μｍ厚まで圧延してアルミニウム箔を得た。このアルミニウム箔には、さらに、３３０℃、６時間の熱処理を実施して供試材とした。供試材のＡｌ−（Ｆｅ、Ｎｉ）系金属間化合物からなる析出物について、組成像の画像解析により分散密度を測定し、その結果を表２の「析出物密度」の欄に示す。 The slab adjusted to the composition shown in Table 1 was melted by a conventional method, and this slab was subjected to a homogenization treatment under the condition of maintaining at 530 ° C. for 2 hours. Then, it rolled to 7 mm thickness by hot rolling, and also rolled to 50 micrometers thickness by cold rolling, and obtained aluminum foil. This aluminum foil was further subjected to heat treatment at 330 ° C. for 6 hours to obtain a test material. About the deposit which consists of an Al- (Fe, Ni) type intermetallic compound of a test material, a dispersion density was measured by the image analysis of a composition image, and the result is shown in the column of "precipitate density" of Table 2.
さらに、各供試材に対し、１００μｍの線幅で間隔を１００μｍとしたストライプ状レジストを印刷し、１ｍｏｌ／ｌの塩酸（６０℃）中で供試材を溶解し、所要時間を測定した。また、エッチング後、ストライプ状レジスト印刷部端部からの溶解の入り込み量を計測し、鮮鋭性の評価とした。これらの溶解時間及び鮮鋭性（入り込み量）を表２に示す。 Further, a striped resist having a line width of 100 μm and an interval of 100 μm was printed on each sample material, the sample material was dissolved in 1 mol / l hydrochloric acid (60 ° C.), and the required time was measured. In addition, after etching, the amount of dissolution entering from the edge of the stripe-shaped resist printing portion was measured to evaluate the sharpness. These dissolution times and sharpness (intrusion amount) are shown in Table 2.
表２に示すように、本発明の供試材は、溶解時間が短く、鮮鋭性も小さい結果が得られており、化学溶解性、回路線の際形状が良好となることが明らかとなった。一方、本発明の範囲外となる比較例では、溶解時間が長かったり、鮮鋭性が大きな値になったりしており、化学溶解性、回路パターンの成形性のいずれかにおいて不適となった。 As shown in Table 2, the test material of the present invention has a short melting time and a small sharpness, and it is clear that the chemical solubility and the shape of the circuit line are good. . On the other hand, in the comparative example which is out of the scope of the present invention, the dissolution time is long or the sharpness is a large value, which is unsuitable for either chemical solubility or circuit pattern moldability.
Claims (2)
Ｓｉ：０．０１〜０．２％、
Ｆｅ：０．０１〜０．７％、
Ｃｕ：０．０００５〜０．０１％、
Ｎｉ：０．００２〜０．１％、
Ｚｎ及びＧａの一種又は二種：０．００２〜０．１％、を含有し、
残部がＡｌと不可避不純物からなることを特徴とする印刷回路用アルミニウム箔。 % By mass
Si: 0.01 to 0.2%,
Fe: 0.01 to 0.7%,
Cu: 0.0005 to 0.01%,
Ni: 0.002 to 0.1%,
One or two of Zn and Ga: 0.002 to 0.1%,
An aluminum foil for printed circuit, wherein the balance is made of Al and inevitable impurities.
請求項１に記載の印刷回路用アルミニウム箔。 Al— (Fe, Ni) -based intermetallic compounds are dispersed at a density of 10 4 to 10 6 / cm 2 .
The aluminum foil for printed circuits according to claim 1.
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