JP2012146939A5 - - Google Patents
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- JP2012146939A5 JP2012146939A5 JP2011037171A JP2011037171A JP2012146939A5 JP 2012146939 A5 JP2012146939 A5 JP 2012146939A5 JP 2011037171 A JP2011037171 A JP 2011037171A JP 2011037171 A JP2011037171 A JP 2011037171A JP 2012146939 A5 JP2012146939 A5 JP 2012146939A5
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Claims (4)
前記反応室を覆うように設けられ、前記反応室を加熱する加熱部と、
前記反応室内に前記複数の基板に沿うように設けられ、前記複数の基板が配置される方向に向けて第1ガスを噴出する第1ガス供給口を有する第1ガス供給管と、
前記反応室内に前記複数の基板に沿うように設けられ、前記複数の基板が配置される方向に向けて第2ガスを噴出する第2ガス供給口を有する第2ガス供給管と、
少なくとも前記第2ガスが前記第1ガス供給口へ向かう流れを抑制する第1遮蔽部と、
を具備する基板処理装置。 A reaction chamber in which a plurality of substrates are arranged in a vertical direction;
A heating unit provided to cover the reaction chamber and heating the reaction chamber;
A first gas supply pipe provided along the plurality of substrates in the reaction chamber and having a first gas supply port for ejecting a first gas in a direction in which the plurality of substrates are arranged;
A second gas supply pipe provided in the reaction chamber along the plurality of substrates and having a second gas supply port for ejecting a second gas in a direction in which the plurality of substrates are arranged;
A first shielding portion that suppresses at least the flow of the second gas toward the first gas supply port;
A substrate processing apparatus comprising:
前記第1遮蔽部は、少なくとも前記第1ガス供給口の両側に設けられ、前記第1ガス供給口から前記複数の基板が配置される方向に延在する遮蔽壁である基板処理装置。 In claim 1,
The substrate processing apparatus, wherein the first shielding part is a shielding wall provided at least on both sides of the first gas supply port and extending from the first gas supply port in a direction in which the plurality of substrates are arranged.
前記反応室内に搬入された前記複数の基板に沿うように前記反応室内に設けられた第1ガス供給ノズルに設けられた第1ガス供給口から第1ガス、及び、前記反応室内に搬入された前記複数の基板に沿うように前記反応室内に設けられた第2ガス供給ノズルに設けられた第2ガス供給口から第2ガスを前記複数の基板に供給し、前記第1ガスと前記第2ガスが混合されることにより前記複数の基板上に所定の膜を形成する成膜工程と、 From the first gas supply port provided in the first gas supply nozzle provided in the reaction chamber so as to follow the plurality of substrates carried into the reaction chamber, the first gas was introduced into the reaction chamber. A second gas is supplied to the plurality of substrates from a second gas supply port provided in a second gas supply nozzle provided in the reaction chamber along the plurality of substrates, and the first gas and the second gas are supplied. A film forming step of forming a predetermined film on the plurality of substrates by mixing gas;
前記所定の膜が形成された前記複数の基板を前記反応室から搬出するボートアンローディング工程と、を有し、 A boat unloading step of unloading the plurality of substrates on which the predetermined film is formed from the reaction chamber,
前記成膜工程において、前記第1ガスが前記第2ガス供給口に向かう流れを遮蔽部により抑制する半導体デバイスの製造方法。 A method of manufacturing a semiconductor device, wherein, in the film forming step, the flow of the first gas toward the second gas supply port is suppressed by a shielding portion.
前記反応室内に搬入された前記複数の基板に沿うように前記反応室内に設けられた第1ガス供給ノズルに設けられた第1ガス供給口から第1ガス、及び、前記反応室内に搬入された前記複数の基板に沿うように前記反応室内に設けられた第2ガス供給ノズルに設けられた第2ガス供給口から第2ガスを前記複数の基板に供給し、前記第1ガスと前記第2ガスが混合されることにより前記複数の基板上に所定の膜を形成する成膜工程と、
前記所定の膜が形成された前記複数の基板を前記反応室から搬出するボートアンローディング工程と、を有し、
前記成膜工程において、前記第1ガスが前記第2ガス供給口に向かう流れを遮蔽部により抑制する基板の製造方法。
A boat loading step of loading a boat in which a plurality of substrates are mounted in the vertical direction into the reaction chamber;
From the first gas supply port provided in the first gas supply nozzle provided in the reaction chamber so as to follow the plurality of substrates carried into the reaction chamber, the first gas was introduced into the reaction chamber. A second gas is supplied to the plurality of substrates from a second gas supply port provided in a second gas supply nozzle provided in the reaction chamber along the plurality of substrates, and the first gas and the second gas are supplied. A film forming step of forming a predetermined film on the plurality of substrates by mixing gas;
A boat unloading step of unloading the plurality of substrates on which the predetermined film is formed from the reaction chamber,
A method for manufacturing a substrate, wherein, in the film forming step, the flow of the first gas toward the second gas supply port is suppressed by a shielding portion.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011037171A JP5735304B2 (en) | 2010-12-21 | 2011-02-23 | Substrate processing apparatus, substrate manufacturing method, semiconductor device manufacturing method, and gas supply pipe |
US13/331,123 US20120156886A1 (en) | 2010-12-21 | 2011-12-20 | Substrate processing apparatus, method of manufacturing substrate, and method of manufacturing semiconductor device |
CN201110442414.6A CN102543689B (en) | 2010-12-21 | 2011-12-21 | The manufacture method of lining processor, substrate and the manufacture method of semiconductor device |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2010284387 | 2010-12-21 | ||
JP2010284387 | 2010-12-21 | ||
JP2011037171A JP5735304B2 (en) | 2010-12-21 | 2011-02-23 | Substrate processing apparatus, substrate manufacturing method, semiconductor device manufacturing method, and gas supply pipe |
Publications (3)
Publication Number | Publication Date |
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JP2012146939A JP2012146939A (en) | 2012-08-02 |
JP2012146939A5 true JP2012146939A5 (en) | 2014-04-03 |
JP5735304B2 JP5735304B2 (en) | 2015-06-17 |
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JP2011037171A Active JP5735304B2 (en) | 2010-12-21 | 2011-02-23 | Substrate processing apparatus, substrate manufacturing method, semiconductor device manufacturing method, and gas supply pipe |
Country Status (3)
Country | Link |
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US (1) | US20120156886A1 (en) |
JP (1) | JP5735304B2 (en) |
CN (1) | CN102543689B (en) |
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