JP2012146758A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2012146758A5 JP2012146758A5 JP2011002585A JP2011002585A JP2012146758A5 JP 2012146758 A5 JP2012146758 A5 JP 2012146758A5 JP 2011002585 A JP2011002585 A JP 2011002585A JP 2011002585 A JP2011002585 A JP 2011002585A JP 2012146758 A5 JP2012146758 A5 JP 2012146758A5
- Authority
- JP
- Japan
- Prior art keywords
- terahertz wave
- excitation light
- layer
- terahertz
- wave detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005284 excitation Effects 0.000 claims description 23
- 238000001514 detection method Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims 2
- 238000001328 terahertz time-domain spectroscopy Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001925 cycloalkenes Chemical class 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011002585A JP5737956B2 (ja) | 2011-01-08 | 2011-01-08 | テラヘルツ波素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011002585A JP5737956B2 (ja) | 2011-01-08 | 2011-01-08 | テラヘルツ波素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012146758A JP2012146758A (ja) | 2012-08-02 |
| JP2012146758A5 true JP2012146758A5 (https=) | 2014-02-20 |
| JP5737956B2 JP5737956B2 (ja) | 2015-06-17 |
Family
ID=46790056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011002585A Expired - Fee Related JP5737956B2 (ja) | 2011-01-08 | 2011-01-08 | テラヘルツ波素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5737956B2 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101700779B1 (ko) * | 2012-09-21 | 2017-01-31 | 한국전자통신연구원 | 포토믹서 및 그의 제조방법 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3243510B2 (ja) * | 1999-11-22 | 2002-01-07 | 独立行政法人産業技術総合研究所 | 電界効果テラヘルツ電磁波発生素子 |
| GB2392782B (en) * | 2002-09-04 | 2005-07-13 | Teraview Ltd | An Antenna |
| JP4785392B2 (ja) * | 2004-03-26 | 2011-10-05 | キヤノン株式会社 | テラヘルツ電磁波の発生素子の製造方法 |
| JP2007281223A (ja) * | 2006-04-07 | 2007-10-25 | Matsushita Electric Ind Co Ltd | 電磁波発生装置 |
| JP2010050287A (ja) * | 2008-08-21 | 2010-03-04 | Canon Inc | 光伝導素子 |
| JP5328265B2 (ja) * | 2008-08-25 | 2013-10-30 | キヤノン株式会社 | テラヘルツ波発生素子、及びテラヘルツ波発生装置 |
| JP2010283176A (ja) * | 2009-06-05 | 2010-12-16 | Canon Inc | 光伝導素子、それを用いたテラヘルツ波発生装置及び検出装置 |
-
2011
- 2011-01-08 JP JP2011002585A patent/JP5737956B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Pogna et al. | Hot-carrier cooling in high-quality graphene is intrinsically limited by optical phonons | |
| Du et al. | Ultrafast modulation of exciton–plasmon coupling in a monolayer WS2–Ag nanodisk hybrid system | |
| Furchi et al. | Microcavity-integrated graphene photodetector | |
| Schuler et al. | Controlled generation of ap–n junction in a waveguide integrated graphene photodetector | |
| US11112305B2 (en) | Photoconductive detector device with plasmonic electrodes | |
| Huang et al. | Terahertz surface emission from layered MoS2 crystal: competition between surface optical rectification and surface photocurrent surge | |
| Tong et al. | Antenna enhanced graphene THz emitter and detector | |
| Yao et al. | High-responsivity mid-infrared graphene detectors with antenna-enhanced photocarrier generation and collection | |
| Lien et al. | Engineering light outcoupling in 2D materials | |
| Casadei et al. | Photonic–plasmonic coupling of GaAs single nanowires to optical nanoantennas | |
| Tran et al. | Decelerated hot carrier cooling in graphene via nondissipative carrier injection from MoS2 | |
| JP5610793B2 (ja) | 光伝導素子 | |
| Shinokita et al. | Strong amplification of coherent acoustic phonons by intraminiband currents in a semiconductor superlattice | |
| CN102194914B (zh) | 光学元件以及包含它的光学器件和太赫兹时域分光装置 | |
| JP2011181708A5 (https=) | ||
| Ganichev et al. | Terahertz electric field driven electric currents and ratchet effects in graphene | |
| JP6001063B2 (ja) | 光学素子及び光検出器 | |
| Hwang et al. | Switching of photonic crystal lasers by graphene | |
| Obraztsov et al. | Coherent detection of terahertz radiation with graphene | |
| US8153999B2 (en) | Terahertz wave generating device and apparatus using the same | |
| Yao et al. | Interfacial THz generation from graphene/Si mixed-dimensional van der Waals heterostructure | |
| JP2013007679A5 (https=) | ||
| Quan et al. | Hot carrier transfer in PtSe2/graphene enabled by the hot phonon bottleneck | |
| JP2011135007A5 (https=) | ||
| Chen et al. | Uniaxial strain-induced tunable mid-infrared light emission from thin film black phosphorus |