JP2012134252A - 高周波半導体スイッチ - Google Patents
高周波半導体スイッチ Download PDFInfo
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- JP2012134252A JP2012134252A JP2010283723A JP2010283723A JP2012134252A JP 2012134252 A JP2012134252 A JP 2012134252A JP 2010283723 A JP2010283723 A JP 2010283723A JP 2010283723 A JP2010283723 A JP 2010283723A JP 2012134252 A JP2012134252 A JP 2012134252A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 230000005669 field effect Effects 0.000 claims abstract description 12
- 230000005540 biological transmission Effects 0.000 abstract description 24
- 238000003780 insertion Methods 0.000 description 8
- 230000037431 insertion Effects 0.000 description 8
- 238000002955 isolation Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/44—Transmit/receive switching
Abstract
【解決手段】高周波半導体スイッチ10は、複数の電界効果型トランジスタ50を有する。複数の電界効果型トランジスタ50は、それぞれ、基板100に間隔を置いて形成されたソース領域130およびドレイン領域140と、当該間隔上であって基板100上に形成されたゲート160と、基板100上に形成されソース領域に接続されるソースコンタクト172と、基板100上に形成されドレイン領域140に接続されるドレインコンタクト182とを含む。受信端子側に接続される受信端子側トランジスタ50aのソースコンタクト172およびドレインコンタクト182間の距離Lrは、送信端子側に接続される送信端子側トランジスタ50cのソースコンタクト172およびドレインコンタクト182間の距離Ltよりも長い。
【選択図】図2
Description
20a〜d…スイッチ、
30…アンテナ端子、
40a〜d…RF端子、
100…シリコン基板、
110…絶縁膜、
120…半導体層、
130…ソース領域、
140…ドレイン領域、
150…酸化膜、
160…ゲート、
170…ソース配線、
172…ソースコンタクト、
180…ドレイン配線、
182…ドレインコンタクト。
Claims (1)
- 複数の電界効果型トランジスタを有し、各電界効果型トランジスタのゲートへの電圧印加を切り替えることによって、所望の無線通信を達成するための高周波半導体スイッチであって、
複数の前記電界効果型トランジスタは、それぞれ、基板に間隔を置いて形成されたソース領域およびドレイン領域と、当該間隔上であって前記基板上に形成されたゲートと、前記基板上に形成され前記ソース領域に接続されるソースコンタクトと、前記基板上に形成され前記ドレイン領域に接続されるドレインコンタクトとを含み、
前記複数の電界効果型トランジスタのうち、受信端子側に接続される受信端子側トランジスタのソースコンタクトおよびドレインコンタクト間の距離Lrは、送信端子側に接続される送信端子側トランジスタのソースコンタクトおよびドレインコンタクト間の距離Ltよりも長いことを特徴とする高周波半導体スイッチ。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010283723A JP5735268B2 (ja) | 2010-12-20 | 2010-12-20 | 高周波半導体スイッチ |
KR1020110087275A KR101228652B1 (ko) | 2010-12-20 | 2011-08-30 | 고주파 반도체 스위치 |
US13/355,257 US8482337B2 (en) | 2010-12-20 | 2012-01-20 | High frequency semiconductor switch |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010283723A JP5735268B2 (ja) | 2010-12-20 | 2010-12-20 | 高周波半導体スイッチ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012134252A true JP2012134252A (ja) | 2012-07-12 |
JP5735268B2 JP5735268B2 (ja) | 2015-06-17 |
Family
ID=46233584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010283723A Expired - Fee Related JP5735268B2 (ja) | 2010-12-20 | 2010-12-20 | 高周波半導体スイッチ |
Country Status (3)
Country | Link |
---|---|
US (1) | US8482337B2 (ja) |
JP (1) | JP5735268B2 (ja) |
KR (1) | KR101228652B1 (ja) |
Families Citing this family (31)
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US8349167B2 (en) | 2006-12-14 | 2013-01-08 | Life Technologies Corporation | Methods and apparatus for detecting molecular interactions using FET arrays |
US11339430B2 (en) | 2007-07-10 | 2022-05-24 | Life Technologies Corporation | Methods and apparatus for measuring analytes using large scale FET arrays |
US8262900B2 (en) * | 2006-12-14 | 2012-09-11 | Life Technologies Corporation | Methods and apparatus for measuring analytes using large scale FET arrays |
JP5622392B2 (ja) | 2006-12-14 | 2014-11-12 | ライフ テクノロジーズ コーポレーション | 大規模fetアレイを用いた分析物測定のための方法および装置 |
US20100301398A1 (en) | 2009-05-29 | 2010-12-02 | Ion Torrent Systems Incorporated | Methods and apparatus for measuring analytes |
US20100137143A1 (en) | 2008-10-22 | 2010-06-03 | Ion Torrent Systems Incorporated | Methods and apparatus for measuring analytes |
US20120261274A1 (en) | 2009-05-29 | 2012-10-18 | Life Technologies Corporation | Methods and apparatus for measuring analytes |
US8776573B2 (en) | 2009-05-29 | 2014-07-15 | Life Technologies Corporation | Methods and apparatus for measuring analytes |
JP2013533482A (ja) | 2010-06-30 | 2013-08-22 | ライフ テクノロジーズ コーポレーション | イオン感応性電荷蓄積回路および方法 |
US9164070B2 (en) | 2010-06-30 | 2015-10-20 | Life Technologies Corporation | Column adc |
US20120001646A1 (en) | 2010-06-30 | 2012-01-05 | Life Technologies Corporation | Methods and apparatus for testing isfet arrays |
US11307166B2 (en) | 2010-07-01 | 2022-04-19 | Life Technologies Corporation | Column ADC |
JP5876044B2 (ja) | 2010-07-03 | 2016-03-02 | ライフ テクノロジーズ コーポレーション | 低濃度ドープドレインを有する化学的感応性センサ |
EP2617061B1 (en) | 2010-09-15 | 2021-06-30 | Life Technologies Corporation | Methods and apparatus for measuring analytes |
US9970984B2 (en) | 2011-12-01 | 2018-05-15 | Life Technologies Corporation | Method and apparatus for identifying defects in a chemical sensor array |
US8786331B2 (en) | 2012-05-29 | 2014-07-22 | Life Technologies Corporation | System for reducing noise in a chemical sensor array |
US9080968B2 (en) | 2013-01-04 | 2015-07-14 | Life Technologies Corporation | Methods and systems for point of use removal of sacrificial material |
US9841398B2 (en) | 2013-01-08 | 2017-12-12 | Life Technologies Corporation | Methods for manufacturing well structures for low-noise chemical sensors |
US8963216B2 (en) | 2013-03-13 | 2015-02-24 | Life Technologies Corporation | Chemical sensor with sidewall spacer sensor surface |
US9835585B2 (en) | 2013-03-15 | 2017-12-05 | Life Technologies Corporation | Chemical sensor with protruded sensor surface |
WO2014149780A1 (en) | 2013-03-15 | 2014-09-25 | Life Technologies Corporation | Chemical sensor with consistent sensor surface areas |
CN105051525B (zh) | 2013-03-15 | 2019-07-26 | 生命科技公司 | 具有薄导电元件的化学设备 |
US20140336063A1 (en) | 2013-05-09 | 2014-11-13 | Life Technologies Corporation | Windowed Sequencing |
US10458942B2 (en) | 2013-06-10 | 2019-10-29 | Life Technologies Corporation | Chemical sensor array having multiple sensors per well |
KR101952857B1 (ko) * | 2013-12-20 | 2019-02-27 | 삼성전기주식회사 | 스위칭 회로 및 이를 포함하는 고주파 스위치 |
US10077472B2 (en) | 2014-12-18 | 2018-09-18 | Life Technologies Corporation | High data rate integrated circuit with power management |
KR102593647B1 (ko) | 2014-12-18 | 2023-10-26 | 라이프 테크놀로지스 코포레이션 | 트랜스미터 구성을 갖춘 높은 데이터율 집적 회로 |
EP3234575B1 (en) | 2014-12-18 | 2023-01-25 | Life Technologies Corporation | Apparatus for measuring analytes using large scale fet arrays |
JP6371724B2 (ja) | 2015-03-13 | 2018-08-08 | 株式会社東芝 | 半導体スイッチ |
KR20210111982A (ko) | 2020-03-04 | 2021-09-14 | 주식회사 디비하이텍 | 알에프 스위치 소자 |
KR20220001812A (ko) * | 2020-06-30 | 2022-01-06 | 삼성전기주식회사 | Rf 스위치 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0870245A (ja) * | 1994-08-29 | 1996-03-12 | Hitachi Ltd | 低歪スイッチ |
JPH09232827A (ja) * | 1996-02-21 | 1997-09-05 | Oki Electric Ind Co Ltd | 半導体装置及び送受信切り替え型アンテナスイッチ回路 |
JP2005038958A (ja) * | 2003-07-17 | 2005-02-10 | Oki Electric Ind Co Ltd | 半導体装置の製造方法及び半導体装置 |
JP2007073815A (ja) * | 2005-09-08 | 2007-03-22 | Toshiba Corp | 半導体装置 |
JP2007104021A (ja) * | 2005-09-30 | 2007-04-19 | Fujitsu Ltd | スイッチ回路及び集積回路 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3243892B2 (ja) * | 1993-05-21 | 2002-01-07 | ソニー株式会社 | 信号切り替え用スイッチ |
JP3441236B2 (ja) * | 1995-04-24 | 2003-08-25 | ソニー株式会社 | 半導体集積回路装置 |
US20090181630A1 (en) | 2008-01-15 | 2009-07-16 | Kabushiki Kaisha Toshiba | Radio frequency switch circuit |
JP2009194891A (ja) | 2008-01-15 | 2009-08-27 | Toshiba Corp | 高周波スイッチ回路 |
JP5237842B2 (ja) * | 2009-01-29 | 2013-07-17 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
-
2010
- 2010-12-20 JP JP2010283723A patent/JP5735268B2/ja not_active Expired - Fee Related
-
2011
- 2011-08-30 KR KR1020110087275A patent/KR101228652B1/ko active IP Right Grant
-
2012
- 2012-01-20 US US13/355,257 patent/US8482337B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0870245A (ja) * | 1994-08-29 | 1996-03-12 | Hitachi Ltd | 低歪スイッチ |
JPH09232827A (ja) * | 1996-02-21 | 1997-09-05 | Oki Electric Ind Co Ltd | 半導体装置及び送受信切り替え型アンテナスイッチ回路 |
JP2005038958A (ja) * | 2003-07-17 | 2005-02-10 | Oki Electric Ind Co Ltd | 半導体装置の製造方法及び半導体装置 |
JP2007073815A (ja) * | 2005-09-08 | 2007-03-22 | Toshiba Corp | 半導体装置 |
JP2007104021A (ja) * | 2005-09-30 | 2007-04-19 | Fujitsu Ltd | スイッチ回路及び集積回路 |
Also Published As
Publication number | Publication date |
---|---|
JP5735268B2 (ja) | 2015-06-17 |
US8482337B2 (en) | 2013-07-09 |
KR20120069528A (ko) | 2012-06-28 |
US20120154018A1 (en) | 2012-06-21 |
KR101228652B1 (ko) | 2013-01-31 |
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