JP2012129799A - 固体撮像素子および駆動方法、並びに電子機器 - Google Patents

固体撮像素子および駆動方法、並びに電子機器 Download PDF

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Publication number
JP2012129799A
JP2012129799A JP2010279509A JP2010279509A JP2012129799A JP 2012129799 A JP2012129799 A JP 2012129799A JP 2010279509 A JP2010279509 A JP 2010279509A JP 2010279509 A JP2010279509 A JP 2010279509A JP 2012129799 A JP2012129799 A JP 2012129799A
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JP
Japan
Prior art keywords
unit
charge
reset
pixel
transfer
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Pending
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JP2010279509A
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English (en)
Japanese (ja)
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JP2012129799A5 (enExample
Inventor
Yusuke Oike
祐輔 大池
Takafumi Takatsuka
挙文 高塚
Yasuhiro Yamamura
育弘 山村
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Sony Corp
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Sony Corp
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Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2010279509A priority Critical patent/JP2012129799A/ja
Priority to TW100141820A priority patent/TW201246924A/zh
Priority to CN201120501646XU priority patent/CN202395873U/zh
Priority to CN2011103994424A priority patent/CN102572311A/zh
Priority to US13/312,366 priority patent/US20120154656A1/en
Priority to KR1020110130243A priority patent/KR20120067286A/ko
Publication of JP2012129799A publication Critical patent/JP2012129799A/ja
Publication of JP2012129799A5 publication Critical patent/JP2012129799A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
    • H10F39/1865—Overflow drain structures

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2010279509A 2010-12-15 2010-12-15 固体撮像素子および駆動方法、並びに電子機器 Pending JP2012129799A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010279509A JP2012129799A (ja) 2010-12-15 2010-12-15 固体撮像素子および駆動方法、並びに電子機器
TW100141820A TW201246924A (en) 2010-12-15 2011-11-16 Solid-state imaging element, driving method, and electronic apparatus
CN201120501646XU CN202395873U (zh) 2010-12-15 2011-12-05 固体摄像器件和电子装置
CN2011103994424A CN102572311A (zh) 2010-12-15 2011-12-05 固体摄像器件、用于固体摄像器件的驱动方法和电子装置
US13/312,366 US20120154656A1 (en) 2010-12-15 2011-12-06 Solid-state imaging element, driving method, and electronic apparatus
KR1020110130243A KR20120067286A (ko) 2010-12-15 2011-12-07 고체 촬상 소자, 구동 방법, 및 전자 기기

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010279509A JP2012129799A (ja) 2010-12-15 2010-12-15 固体撮像素子および駆動方法、並びに電子機器

Publications (2)

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JP2012129799A true JP2012129799A (ja) 2012-07-05
JP2012129799A5 JP2012129799A5 (enExample) 2014-01-09

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Family Applications (1)

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JP2010279509A Pending JP2012129799A (ja) 2010-12-15 2010-12-15 固体撮像素子および駆動方法、並びに電子機器

Country Status (5)

Country Link
US (1) US20120154656A1 (enExample)
JP (1) JP2012129799A (enExample)
KR (1) KR20120067286A (enExample)
CN (2) CN102572311A (enExample)
TW (1) TW201246924A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014178179A1 (ja) * 2013-04-30 2014-11-06 富士フイルム株式会社 固体撮像素子および撮像装置
US9635290B2 (en) 2014-04-21 2017-04-25 Renesas Electronics Corporation Solid-state image sensing device and electronic device
JPWO2017183451A1 (ja) * 2016-04-21 2018-11-08 パナソニックＩｐマネジメント株式会社 撮像装置及びそれを備えたカメラシステム
JP2022179595A (ja) * 2014-07-25 2022-12-02 株式会社半導体エネルギー研究所 撮像装置

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6041500B2 (ja) * 2012-03-01 2016-12-07 キヤノン株式会社 撮像装置、撮像システム、撮像装置の駆動方法、撮像システムの駆動方法
JP2014039159A (ja) * 2012-08-16 2014-02-27 Sony Corp 固体撮像装置および駆動方法、並びに電子機器
WO2014069394A1 (ja) * 2012-10-30 2014-05-08 株式会社島津製作所 リニアイメージセンサ及びその駆動方法
FR3010229B1 (fr) * 2013-08-30 2016-12-23 Pyxalis Capteur d'image avec bruit ktc reduit
KR20250008136A (ko) * 2013-11-18 2025-01-14 가부시키가이샤 니콘 고체 촬상 소자 및 촬상 장치
JP6395482B2 (ja) * 2014-07-11 2018-09-26 キヤノン株式会社 光電変換装置、および、撮像システム
JP2016021445A (ja) 2014-07-11 2016-02-04 キヤノン株式会社 光電変換装置、および、撮像システム
JP6425448B2 (ja) 2014-07-31 2018-11-21 キヤノン株式会社 光電変換装置、および、撮像システム
JP6478600B2 (ja) * 2014-12-04 2019-03-06 キヤノン株式会社 撮像装置およびその制御方法
EP3252818B1 (en) * 2015-01-29 2019-11-20 Sony Semiconductor Solutions Corporation Solid-state imaging element and electronic device
CN106470321B (zh) * 2015-08-21 2020-03-31 比亚迪股份有限公司 图像传感器及图像传感器的读取方法
US9736413B1 (en) 2016-02-03 2017-08-15 Sony Corporation Image sensor and electronic device with active reset circuit, and method of operating the same
JP2018060980A (ja) 2016-10-07 2018-04-12 キヤノン株式会社 撮像表示装置及びウェアラブルデバイス
US10623655B2 (en) * 2018-05-30 2020-04-14 Semiconductor Components Industries, Llc Image sensors with light flicker mitigation capabilities
KR102861849B1 (ko) 2018-11-19 2025-09-22 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 장치 및 전자 기기
CN112291492B (zh) * 2019-07-25 2024-03-29 比亚迪半导体股份有限公司 去除图像传感器噪声的方法和装置、存储介质
CN113784062B (zh) * 2021-08-25 2022-04-26 中国科学院长春光学精密机械与物理研究所 非连续成像cmos图像传感器稳定图像控制系统及方法

Citations (3)

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JP2004095966A (ja) * 2002-09-02 2004-03-25 Fujitsu Ltd 固体撮像装置及び画像読み出し方法
JP2006148475A (ja) * 2004-11-18 2006-06-08 Sharp Corp 画像センサおよびその駆動方法、並びに走査駆動器
JP2010268079A (ja) * 2009-05-12 2010-11-25 Olympus Imaging Corp 撮像装置、撮像装置の製造方法

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JP4325557B2 (ja) * 2005-01-04 2009-09-02 ソニー株式会社 撮像装置および撮像方法
JP5101946B2 (ja) * 2007-08-03 2012-12-19 キヤノン株式会社 撮像装置及び撮像システム
US8223235B2 (en) * 2007-12-13 2012-07-17 Motorola Mobility, Inc. Digital imager with dual rolling shutters
JP5215262B2 (ja) * 2009-02-03 2013-06-19 オリンパスイメージング株式会社 撮像装置
US20100271517A1 (en) * 2009-04-24 2010-10-28 Yannick De Wit In-pixel correlated double sampling pixel

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004095966A (ja) * 2002-09-02 2004-03-25 Fujitsu Ltd 固体撮像装置及び画像読み出し方法
JP2006148475A (ja) * 2004-11-18 2006-06-08 Sharp Corp 画像センサおよびその駆動方法、並びに走査駆動器
JP2010268079A (ja) * 2009-05-12 2010-11-25 Olympus Imaging Corp 撮像装置、撮像装置の製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014178179A1 (ja) * 2013-04-30 2014-11-06 富士フイルム株式会社 固体撮像素子および撮像装置
JP2014216978A (ja) * 2013-04-30 2014-11-17 富士フイルム株式会社 固体撮像素子および撮像装置
US9635290B2 (en) 2014-04-21 2017-04-25 Renesas Electronics Corporation Solid-state image sensing device and electronic device
US10038868B2 (en) 2014-04-21 2018-07-31 Renesas Electronics Corporation Solid-state image sensing device and electronic device
JP2022179595A (ja) * 2014-07-25 2022-12-02 株式会社半導体エネルギー研究所 撮像装置
JPWO2017183451A1 (ja) * 2016-04-21 2018-11-08 パナソニックＩｐマネジメント株式会社 撮像装置及びそれを備えたカメラシステム

Also Published As

Publication number Publication date
KR20120067286A (ko) 2012-06-25
CN202395873U (zh) 2012-08-22
CN102572311A (zh) 2012-07-11
US20120154656A1 (en) 2012-06-21
TW201246924A (en) 2012-11-16

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