JP2012109404A - Light emitting device and lighting apparatus having light emitting device - Google Patents

Light emitting device and lighting apparatus having light emitting device Download PDF

Info

Publication number
JP2012109404A
JP2012109404A JP2010257171A JP2010257171A JP2012109404A JP 2012109404 A JP2012109404 A JP 2012109404A JP 2010257171 A JP2010257171 A JP 2010257171A JP 2010257171 A JP2010257171 A JP 2010257171A JP 2012109404 A JP2012109404 A JP 2012109404A
Authority
JP
Japan
Prior art keywords
emitting device
light emitting
light
heat
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010257171A
Other languages
Japanese (ja)
Other versions
JP5638922B2 (en
Inventor
Takeshi Nakasuji
威 中筋
Atsushi Takashima
淳 高島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Priority to JP2010257171A priority Critical patent/JP5638922B2/en
Publication of JP2012109404A publication Critical patent/JP2012109404A/en
Application granted granted Critical
Publication of JP5638922B2 publication Critical patent/JP5638922B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48471Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399Material
    • H01L2224/854Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85417Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/85424Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399Material
    • H01L2224/854Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85444Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399Material
    • H01L2224/854Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85447Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399Material
    • H01L2224/854Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85455Nickel (Ni) as principal constituent

Abstract

PROBLEM TO BE SOLVED: To provide a light emitting device which has high heat dissipation, high optical output and a long life and reduces costs, and a lighting apparatus having the light emitting device.SOLUTION: A light emitting device 10 and a lighting apparatus 1 comprising the light emitting device 10 are composed of: a light-emitting element 11; an insulation base member 12 above which the light-emitting element 11 is placed; an electric connection member 13 and an electric wiring member 14 as charging units for lighting the light-emitting element 11; a thermal diffusion member 15 arranged so as to cover the whole surface of the base member 12 in order to diffuse heat generated from the light-emitting element 11; a light reflecting member 16 arranged so as to cover the whole surface of the base member 12 including the thermal diffusion member 15 except a part for connecting the electric connection member 13 to the electric wiring member 14 for reflecting light emitted from the light-emitting element 11; and a placement member 17 for placing the light-emitting element 11.

Description

本発明は、発光素子を搭載した発光装置および発光装置を備える照明装置に関する。   The present invention relates to a light emitting device including a light emitting element and a lighting device including the light emitting device.

従来より、スルーホール基板のスルーホールが金属で充填され、スルーホールの上に発光素子の裏側の電極の一方が接続され、スルーホール基板のスルーホールとは絶縁された導電性パターンに発光素子の裏側の電極の他方が接続された発光装置および発光装置を備える照明装置が知られている(例えば、特許文献1参照)。
特許文献1に記載の発光装置および発光装置を備える照明装置は、スルーホールが金属で充填されているためにヒートシンクとしての役割を果たし、放熱性に優れたものとなるために、発光効率も高く保たれ、素子寿命も長くなる。
Conventionally, the through hole of the through hole substrate is filled with metal, one of the electrodes on the back side of the light emitting element is connected to the through hole, and the conductive pattern of the light emitting element is insulated from the through hole of the through hole substrate. A light emitting device to which the other electrode on the back side is connected and a lighting device including the light emitting device are known (see, for example, Patent Document 1).
The light-emitting device and the lighting device including the light-emitting device described in Patent Document 1 serve as a heat sink because the through holes are filled with metal, and are excellent in heat dissipation. This keeps the device life longer.

また、従来より、発光装置の絶縁基板を放熱するために、基体の上面の発光素子を搭載するための搭載部の周囲の備えた反射膜が、銀と金との全率固溶の合金である発光装置および発光装置を備える照明装置が知られている(例えば、特許文献2参照)。
特許文献2に記載の発光装置および発光装置を備える照明装置は、硫化により反射特性が低下しないようにできる。
Conventionally, in order to dissipate heat from the insulating substrate of the light-emitting device, the reflective film provided around the mounting portion for mounting the light-emitting element on the upper surface of the substrate is an alloy that is a solid solution of silver and gold. A lighting device including a certain light emitting device and the light emitting device is known (for example, see Patent Document 2).
The light emitting device and the lighting device including the light emitting device described in Patent Document 2 can prevent reflection characteristics from being deteriorated due to sulfurization.

特開2002−289923号公報(図1、請求項1)JP 2002-289923 A (FIG. 1, claim 1) 特開2010−135729号公報(図1、請求項1)JP 2010-135729 A (FIG. 1, claim 1)

ところが、前述した特許文献1に記載された発光装置および発光装置を備える照明装置は、高放熱を実現する手段としてのスルーホールが、線膨張係数の差に基づいて基材との間に割れが発生したり、めっき処理が必要なビア形成によりコストが上昇したりする。
また、前述した特許文献2に記載された発光装置および発光装置を備える照明装置は、反射層として適用される金属材料が、反射率を上げるために表面粗さを小さくしなければならないのでコストが増加する。さらに、環境負荷に伴う変色により色ずれや光出力が低下する。
However, in the lighting device including the light emitting device and the light emitting device described in Patent Document 1 described above, the through hole as a means for realizing high heat dissipation is cracked between the base material based on the difference in linear expansion coefficient. Or cost increases due to via formation that requires plating.
In addition, the light emitting device and the lighting device including the light emitting device described in Patent Document 2 described above are low in cost because the metal material applied as the reflective layer has to reduce the surface roughness in order to increase the reflectance. To increase. Furthermore, color shift and light output are reduced due to discoloration due to environmental load.

本発明は、前述した課題を解決するためになされたものであり、その目的は、高放熱、高光出力、長寿命および低コスト化できる発光装置および発光装置を備える照明装置を提供することにある。   The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a light-emitting device that can achieve high heat dissipation, high light output, long life, and low cost, and a lighting device including the light-emitting device. .

本発明に係る発光装置は、発光素子と、絶縁性を有し前記発光素子を載置する基材と、前記発光素子を点灯させるための充電部である電気接続部材および電気配線部材と、前記発光素子から発せられた熱を広げるために、前記基材の表面の全体を覆うように配置される熱拡散部材と、前記発光素子から発せられた光を反射させるために前記電気接続部材および前記電気配線部材を接続する箇所を除き、前記熱拡散部材を含めて前記基材の表面の全体を覆うように配置される光反射部材と、前記発光素子を搭載する載置部材とで構成される。   A light-emitting device according to the present invention includes a light-emitting element, a base material having insulating properties on which the light-emitting element is mounted, an electrical connection member and an electrical wiring member that are charging units for lighting the light-emitting element, A heat diffusing member disposed so as to cover the entire surface of the base material in order to spread the heat generated from the light emitting element; and the electrical connection member and the light reflecting the light emitted from the light emitting element. Except for the place where the electrical wiring member is connected, the light reflecting member is disposed so as to cover the entire surface of the base material including the heat diffusing member, and the mounting member on which the light emitting element is mounted. .

本発明に係る発光装置は、前記熱拡散部材が、前記電気配線部材よりも広い領域を有する。   In the light emitting device according to the present invention, the heat diffusing member has a wider area than the electric wiring member.

本発明に係る発光装置は、前記熱拡散部材が、前記載置部材よりも広い領域を有する。   In the light emitting device according to the present invention, the heat diffusing member has a wider area than the mounting member.

本発明に係る発光装置は、前記電気配線部材と前記熱拡散部材とが、絶縁部材または空間で分離される。   In the light emitting device according to the present invention, the electric wiring member and the heat diffusion member are separated by an insulating member or a space.

本発明に係る発光装置は、前記熱拡散部材が、前記電気配線部材を兼ねる。   In the light emitting device according to the present invention, the heat diffusion member also serves as the electric wiring member.

本発明に係る発光装置は、前記発光素子が、反射材料上に載置される。   In the light emitting device according to the present invention, the light emitting element is placed on a reflective material.

本発明に係る発光装置は、前記発光素子が、前記熱拡散部材上に載置される。   In the light emitting device according to the present invention, the light emitting element is placed on the heat diffusing member.

本発明に係る発光装置は、前記載置部材が、前記熱拡散部材の露出部分を覆う。   In the light emitting device according to the present invention, the mounting member covers an exposed portion of the heat diffusing member.

本発明に係る発光装置は、前記載置部材が、透明または前記光反射部材以上の反射率を有する。   In the light emitting device according to the present invention, the mounting member is transparent or has a reflectance higher than that of the light reflecting member.

本発明に係る発光装置は、前記載置部材が、前記熱反射部材以上の反射率を有する。   In the light emitting device according to the present invention, the mounting member has a reflectance higher than that of the heat reflecting member.

本発明に係る発光装置は、前記電気接続部材と前記電気配線部材との接続部に高反射材が塗布される。   In the light emitting device according to the present invention, a highly reflective material is applied to a connection portion between the electrical connection member and the electrical wiring member.

本発明に係る発光装置は、前記基材が、セラミックスを素材とする。   In the light emitting device according to the present invention, the base material is made of ceramics.

本発明に係る発光装置は、前記熱拡散部材が、前記基材以上の高熱伝導率を有する金属材料を素材とする。   In the light emitting device according to the present invention, the heat diffusing member is made of a metal material having a higher thermal conductivity than the base material.

本発明に係る発光装置は、前記電気配線部材が、Cu,Al,W,Ni,Pd,PtおよびAgのうちの少なくとも1つの金属材料を素材とする。   In the light emitting device according to the present invention, the electrical wiring member is made of at least one metal material of Cu, Al, W, Ni, Pd, Pt, and Ag.

本発明に係る発光装置は、前記光反射部材が、セラミックス,硫酸バリウム,炭酸カルシウムおよび酸化亜鉛のうちの少なくとも1つを含有し、少なくとも前記基材、前記熱拡散部材および前記電気配線部材以上の反射率を有する。   In the light emitting device according to the present invention, the light reflecting member contains at least one of ceramics, barium sulfate, calcium carbonate, and zinc oxide, and at least the base material, the heat diffusion member, and the electric wiring member or more. Has reflectivity.

本発明に係る発光装置は、前記電気配線部材の長さが、0.1mm以上であって、2mm以下である。   In the light emitting device according to the present invention, the length of the electric wiring member is 0.1 mm or more and 2 mm or less.

本発明に係る発光装置は、前記光反射部材の厚みが、10μm以上である。   In the light emitting device according to the present invention, the light reflecting member has a thickness of 10 μm or more.

本発明に係る発光装置は、前記発光素子が、複数載置される。   In the light emitting device according to the present invention, a plurality of the light emitting elements are mounted.

本発明に係る発光装置は、前記発光素子が、LEDである。   In the light emitting device according to the present invention, the light emitting element is an LED.

本発明に係る照明装置は、発光装置を搭載した。   The lighting device according to the present invention is equipped with a light emitting device.

本発明に係る発光装置および発光装置を備える照明装置によれば、高放熱、高光出力、長寿命および低コスト化できるという効果を奏する。   According to the light emitting device and the lighting device including the light emitting device according to the present invention, there are effects that high heat dissipation, high light output, long life, and low cost can be achieved.

本発明に係る第1実施形態の発光装置を備える照明装置の縦断面図The longitudinal cross-sectional view of an illuminating device provided with the light-emitting device of 1st Embodiment which concerns on this invention. 本発明に係る第1実施形態の発光装置を備える照明装置の平面図The top view of an illuminating device provided with the light-emitting device of 1st Embodiment which concerns on this invention. 本発明に係る第2実施形態の発光装置を備える照明装置の縦断面図The longitudinal cross-sectional view of an illuminating device provided with the light-emitting device of 2nd Embodiment which concerns on this invention. 本発明に係る第3実施形態の発光装置を備える照明装置の縦断面図A longitudinal sectional view of an illuminating device including the light emitting device according to the third embodiment of the present invention. 本発明に係る第4実施形態の発光装置を備える照明装置の縦断面図A longitudinal sectional view of an illuminating device including the light emitting device according to the fourth embodiment of the present invention.

以下、本発明に係る複数の実施形態の発光装置および発光装置を備える照明装置について図面を参照して説明する。   Hereinafter, a light emitting device and a lighting device including the light emitting device according to a plurality of embodiments of the present invention will be described with reference to the drawings.

(第1実施形態)
図1に示すように、本発明に係る第1実施形態の照明装置1に装備される発光装置10は、発光素子11と、絶縁性を有し発光素子11を載置する基材12と、発光素子11を点灯させるための充電部であるアノード側およびカソード側の一対の電気接続部材13および電気配線部材14と、発光素子11から発せられた熱を広げるために、基材12の表面の全体を覆うように配置される熱拡散部材15と、発光素子11から発せられた光を反射させるために電気接続部材13および電気配線部材14を接続する箇所を除き、熱拡散部材15を含めて基材12の表面の全体を覆うように配置される光反射部材16と、発光素子11を搭載する載置部材17とで構成される。
(First embodiment)
As shown in FIG. 1, the light-emitting device 10 equipped in the illuminating device 1 of 1st Embodiment which concerns on this invention is the light-emitting element 11, the base material 12 which mounts the light-emitting element 11 which has insulation, A pair of electrical connection members 13 and electrical wiring members 14 on the anode side and cathode side, which are charging parts for lighting the light emitting element 11, and the surface of the base material 12 in order to spread the heat generated from the light emitting element 11 The thermal diffusion member 15 is included except for the thermal diffusion member 15 disposed so as to cover the whole, and the location where the electrical connection member 13 and the electrical wiring member 14 are connected to reflect the light emitted from the light emitting element 11. The light reflecting member 16 is disposed so as to cover the entire surface of the substrate 12 and the mounting member 17 on which the light emitting element 11 is mounted.

発光素子11は、LEDであって、サファイア基板の上にバッファ層,n型半導体層,発光層,p型半導体層を順に積層して形成される。n型半導体層の表面にn型電極を形成し、p型半導体層の表面にp型電極を形成する。LEDは、p型電極とn型電極とを電源に接続して電流を流すことにより発光する。
従って、発光素子11がLEDであることにより、省エネ化でき、低コスト化できる。
なお、LEDの基板は、サファイアに限らず、GaN基板等の他の材料を用いてもよい。
The light emitting element 11 is an LED, and is formed by sequentially stacking a buffer layer, an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on a sapphire substrate. An n-type electrode is formed on the surface of the n-type semiconductor layer, and a p-type electrode is formed on the surface of the p-type semiconductor layer. An LED emits light when a p-type electrode and an n-type electrode are connected to a power source and a current is supplied.
Therefore, when the light emitting element 11 is an LED, energy can be saved and the cost can be reduced.
The LED substrate is not limited to sapphire, and other materials such as a GaN substrate may be used.

発光素子11は、光反射部材16上に載置されている。
従って、発光素子11の直下における熱拡散部材15や基材12での光の吸収や透過を抑制して高光反射を実現できる。
The light emitting element 11 is placed on the light reflecting member 16.
Therefore, high light reflection can be realized by suppressing the absorption and transmission of light at the thermal diffusion member 15 and the base material 12 immediately below the light emitting element 11.

基材12は、アルミナ,窒化アルミ等のセラミックスや、ガラスエポキシ,ポリイミド等のプラスチックスや、ガラスの成形品あるいはフィルム状に形成される。
従って、基材12がセラミックスを素材とすることにより、有機材料以上の高熱伝導性と絶縁性を有しているために、ヒートシンク等を介さずに器具に直接固定でき、器具全体として低コスト化できる。
The base material 12 is formed in ceramics such as alumina and aluminum nitride, plastics such as glass epoxy and polyimide, glass moldings or films.
Therefore, since the base material 12 is made of ceramics, it has high thermal conductivity and insulation higher than organic materials, so it can be fixed directly to the instrument without using a heat sink, etc., and the overall cost of the instrument can be reduced. it can.

電気接続部材13は、Auを主成分とするボンディングワイヤであり、長さ寸法L1(図2参照)が0.1mm以上であって2mm以下である。電気接続部材13は、長さ寸法が短すぎると、発光素子11同士の熱や光が干渉し、これに反して、長さ寸法が長すぎると、ボンディングワイヤとしての形状や強度に影響を及ぼす。
従って、電気接続部材13の長さ寸法が0.1mm以上であって2mm以下であることにより、発光素子11同士の光と熱の干渉を防ぎ、かつ、ボンディングワイヤとしての形状および強度を保つために、光出力を増加でき、長寿命化できる。
The electrical connection member 13 is a bonding wire whose main component is Au, and the length L1 (see FIG. 2) is 0.1 mm or more and 2 mm or less. If the length dimension of the electrical connecting member 13 is too short, heat and light between the light emitting elements 11 interfere with each other. On the other hand, if the length dimension is too long, the shape and strength as a bonding wire are affected. .
Therefore, when the length dimension of the electrical connecting member 13 is 0.1 mm or more and 2 mm or less, the light and heat interference between the light emitting elements 11 can be prevented, and the shape and strength as a bonding wire can be maintained. In addition, the light output can be increased and the life can be extended.

電気接続部材13と発光素子11とを封止するための不図示の封止材が適用される。封止材は、屈折率がLED基材よりも小さく、空気よりも大きい、シリコン樹脂やエポキシ樹脂等の透明材料を用いて成形される。封止材は、蛍光体を含有してもよく、外側に蛍光体を含有したキャップやシートを設置してもよい。   A sealing material (not shown) for sealing the electrical connecting member 13 and the light emitting element 11 is applied. The encapsulant is molded using a transparent material such as silicon resin or epoxy resin having a refractive index smaller than that of the LED substrate and larger than that of air. The sealing material may contain a phosphor, and a cap or a sheet containing the phosphor may be installed outside.

電気配線部材14は、Cu微粒子を含有したインクを焼成させるか、あるいはCu箔等により形成される。ただし、投入電流の関係により、例えば、投入電流が1Aであって、Cuの幅が1mmの場合、約35μm以上にするのが好ましい。
なお、電気配線部材14は、Cuに代えて、タングステン,ニッケル,ロジウム,パラジウム,白金,アルミニウム等で形成されてもよい。
従って、電気配線部材14が、高熱伝導材料であるCu,Al,W,Ni,Pd,Pt,Ag等の金属材料を素材とすることにより効率的に熱を下げて、発光素子直下の熱が下げられるために、光出力を増加できる。
The electric wiring member 14 is formed by firing ink containing Cu fine particles or by using Cu foil or the like. However, due to the relationship of the input current, for example, when the input current is 1 A and the width of Cu is 1 mm, it is preferably about 35 μm or more.
The electric wiring member 14 may be formed of tungsten, nickel, rhodium, palladium, platinum, aluminum, or the like instead of Cu.
Accordingly, the electrical wiring member 14 is made of a metal material such as Cu, Al, W, Ni, Pd, Pt, and Ag, which is a high thermal conductivity material, so that the heat is efficiently lowered, and the heat directly under the light emitting element is reduced. The light output can be increased because it is lowered.

ここで、電気接続部材13と電気配線部材14との接続部に、高反射材18が塗布される。
従って、電気接続部材13と電気配線部材14との接続部に、高反射材18が塗布されることにより、電気配線部材14による光吸収を抑制できる。
Here, the highly reflective material 18 is applied to the connecting portion between the electrical connecting member 13 and the electrical wiring member 14.
Therefore, the light reflection by the electrical wiring member 14 can be suppressed by applying the highly reflective material 18 to the connection portion between the electrical connection member 13 and the electrical wiring member 14.

熱拡散部材15は、Cu微粒子を含有したインクを焼成させるか、あるいはCu箔等により形成される。
なお、熱拡散部材15は、Cuでなくとも、AgやAuあるいはAl等の高熱伝導材料を用いてもよい。
従って、熱拡散部材15が、高熱伝導材料であるCu,Al,Ag等の基材12以上の高熱伝導率を有する金属材料を素材とすることにより効率的に熱を下げて、発光素子11の直下の熱が下げられるために、光出力を増加できる。
The heat diffusing member 15 is formed by firing ink containing Cu fine particles or by using a Cu foil or the like.
The heat diffusing member 15 may be made of a highly heat conductive material such as Ag, Au, or Al, instead of Cu.
Accordingly, the heat diffusing member 15 efficiently reduces the heat by using a metal material having a high thermal conductivity higher than that of the base material 12 such as Cu, Al, Ag, etc., which is a high thermal conductivity material, so that the light emitting element 11 Since the direct heat is reduced, the light output can be increased.

熱拡散部材15は、電気配線部材14よりも広い領域を有する。
従って、熱拡散部材15が電気配線部材14よりも広い領域を有するために、熱拡散部材15での熱の広がりが抑制されて低熱抵抗化が図られ、熱を効果的に拡散できる。
The heat diffusion member 15 has a wider area than the electric wiring member 14.
Therefore, since the heat diffusing member 15 has a wider area than the electric wiring member 14, the spread of heat in the heat diffusing member 15 is suppressed, the thermal resistance is reduced, and heat can be effectively diffused.

熱拡散部材15は、載置部材17よりも広い領域を有する。
従って、熱拡散部材15が載置部材17よりも広い領域を有するために、発光素子11から載置部材17へ広がった熱が熱拡散部材15へ放熱されることにより、熱を効果的に拡散できる。
The heat diffusion member 15 has a wider area than the mounting member 17.
Therefore, since the heat diffusing member 15 has a wider area than the mounting member 17, the heat spread from the light emitting element 11 to the mounting member 17 is radiated to the heat diffusing member 15, thereby effectively diffusing heat. it can.

熱拡散部材15は、電気配線部材14との間が長さ寸法(図2参照)L2の絶縁部材または空間で分離される。
従って、熱拡散部材15と電気配線部材14とが絶縁部材または空間で分離されることにより、熱拡散部材15として導電性の高熱伝導材料を用いることができる。
The thermal diffusion member 15 is separated from the electrical wiring member 14 by an insulating member or a space having a length dimension L2 (see FIG. 2) L2.
Therefore, when the heat diffusing member 15 and the electric wiring member 14 are separated by an insulating member or space, a conductive high heat conductive material can be used as the heat diffusing member 15.

光反射部材16は、絶縁性を有する白色材料を用いて成形されており、セラミックス,硫酸バリウム,炭酸カルシウム,酸化亜鉛等の無機フィラーを含有し、少なくとも基材12、熱拡散部材15および電気配線部材14以上の反射率を有するインク材料であり、印刷やスプレー等により膜を形成する。
従って、光反射部材16が、セラミックス,硫酸バリウム,炭酸カルシウム,酸化亜鉛等を含有し、少なくとも基材12、熱拡散部材15および電気配線部材14以上の反射率を有することにより、光吸収を抑制できる。
The light reflecting member 16 is formed using an insulating white material, contains an inorganic filler such as ceramics, barium sulfate, calcium carbonate, and zinc oxide, and includes at least the base material 12, the heat diffusion member 15, and the electric wiring. It is an ink material having a reflectance higher than that of the member 14, and forms a film by printing or spraying.
Accordingly, the light reflecting member 16 contains ceramics, barium sulfate, calcium carbonate, zinc oxide, etc., and has at least the reflectance of the base material 12, the heat diffusing member 15, and the electric wiring member 14, thereby suppressing light absorption. it can.

光反射部材16は、環境負荷により変色するような電気配線部材14や基材12であれば、白色材料の厚みは30μm以上形成されるのが好ましい。ただし、白色材料の性能の向上により電気配線部材14や基材12の影響を受けないのであれば、厚さ寸法T1が10μm程度まで薄くしてもよい。
従って、光反射部材16の厚みが、10μm以上であることにより、熱拡散部材15、電気配線部材14および基材12による光吸収の影響を抑制できる。
If the light reflecting member 16 is the electric wiring member 14 or the base material 12 that changes color due to environmental load, the thickness of the white material is preferably 30 μm or more. However, as long as the performance of the white material is not affected by the electric wiring member 14 or the base material 12, the thickness dimension T1 may be reduced to about 10 μm.
Therefore, when the thickness of the light reflecting member 16 is 10 μm or more, the influence of light absorption by the heat diffusing member 15, the electric wiring member 14, and the base material 12 can be suppressed.

載置部材17は、シリコン樹脂製であって、透明であり、屈折率がLED基材よりも大きく、封止材と同等あるいは、それ以上である。ただし、透明でなくとも、光反射部材16に劣らない反射率を有していれば、白色等に着色されていてもよい。また、シリコン樹脂でなくとも、光や熱による変色等の劣化が抑制された材料であれば、エポキシ樹脂等であってもよい。
載置部材17は、発光素子11の搭載後の樹脂の厚みが、熱抵抗の観点から、薄ければ薄いほどよく、接着の観点も含め、1〜3μm程度に設定される。
従って、載置部材17が透明または光反射部材16以上の反射率を有することにより、載置部材17による光吸収が抑制されて効率的に光を反射できる。
The mounting member 17 is made of silicon resin, is transparent, has a refractive index larger than that of the LED base material, and is equal to or higher than that of the sealing material. However, even if it is not transparent, it may be colored white or the like as long as it has a reflectance that is not inferior to that of the light reflecting member 16. Moreover, even if it is not a silicon resin, an epoxy resin etc. may be sufficient if it is the material by which deterioration, such as discoloration by light or a heat | fever, was suppressed.
The mounting member 17 is preferably set to a thickness of about 1 to 3 μm including the viewpoint of adhesion, as the thickness of the resin after mounting the light emitting element 11 is preferably as thin as possible from the viewpoint of thermal resistance.
Therefore, when the mounting member 17 is transparent or has a reflectance higher than that of the light reflecting member 16, light absorption by the mounting member 17 is suppressed and light can be reflected efficiently.

図2に示すように、熱拡散部材15は、少なくとも発光素子11を中心に、載置部材17の広がり以上に、長さ寸法A<長さ寸法C,長さ寸法B<長さ寸法Dの熱拡散領域19が形成される。   As shown in FIG. 2, the thermal diffusion member 15 has a length dimension A <length dimension C and a length dimension B <length dimension D that is at least centered on the light emitting element 11 and larger than the spread of the mounting member 17. A thermal diffusion region 19 is formed.

このように、発光装置10は、発光素子11と、絶縁性を有し発光素子11を載置する基材12と、発光素子11を点灯させるための充電部である一対の電気接続部材13および電気配線部材14と、発光素子11から発せられた熱を広げるために、基材12の表面の全体を覆うように配置される熱拡散部材15と、発光素子11から発せられた光を反射させるために電気接続部材13および電気配線部材14を接続する箇所を除き、熱拡散部材15を含めて基材12の表面の全体を覆うように配置される光反射部材16と、発光素子11を搭載する載置部材17とで構成される。
従って、光反射部材16が、基材12の表面の全体を覆うことにより、発光素子11からの熱を基材12の全体に広げ、電気接続部材13および電気配線部材14を接続する箇所を除き、熱拡散部材15を含めて基材12の表面の全体を覆うことにより、熱拡散部材15および基材12での光吸収および光透過を抑制して低熱抵抗および高光反射を実現できる。また、使用環境の影響に伴う熱拡散部材15や基材12の変色による光出力および色度の性能の低下を抑制して高寿命化できる。
As described above, the light-emitting device 10 includes the light-emitting element 11, the insulating base 12 on which the light-emitting element 11 is placed, the pair of electrical connection members 13 that are charging units for lighting the light-emitting element 11, and In order to spread the heat generated from the electrical wiring member 14 and the light emitting element 11, the heat diffusing member 15 disposed so as to cover the entire surface of the base 12 and the light emitted from the light emitting element 11 are reflected. For this purpose, the light reflecting member 16 disposed so as to cover the entire surface of the substrate 12 including the heat diffusion member 15 and the light emitting element 11 are mounted except for the portion where the electrical connecting member 13 and the electrical wiring member 14 are connected. And a mounting member 17 to be configured.
Accordingly, the light reflecting member 16 covers the entire surface of the base material 12 to spread the heat from the light emitting element 11 to the entire base material 12, except for the place where the electrical connection member 13 and the electrical wiring member 14 are connected. By covering the entire surface of the substrate 12 including the heat diffusing member 15, light absorption and light transmission at the heat diffusing member 15 and the substrate 12 can be suppressed, and low thermal resistance and high light reflection can be realized. In addition, it is possible to extend the life of the thermal diffusion member 15 and the base material 12 due to the influence of the use environment by suppressing a decrease in light output and chromaticity performance due to discoloration.

以上、説明したように第1実施形態の発光装置10によれば、光反射部材16が、基材12の表面の全体を覆うことにより、発光素子11からの熱を基材12の全体に広げ、電気接続部材13および電気配線部材14を接続する箇所を除き、熱拡散部材15を含めて基材12の表面の全体を覆うことにより、熱拡散部材15および基材12での光吸収および光透過を抑制して低熱抵抗および高光反射を実現できる。また、第1実施形態の発光装置10によれば、使用環境の影響に伴う熱拡散部材15や基材12の変色による光出力および色度の性能の低下を抑制して高寿命化できる。   As described above, according to the light emitting device 10 of the first embodiment, the light reflecting member 16 covers the entire surface of the substrate 12, thereby spreading the heat from the light emitting element 11 to the entire substrate 12. By covering the entire surface of the base material 12 including the heat diffusion member 15 except where the electrical connection member 13 and the electrical wiring member 14 are connected, light absorption and light in the heat diffusion member 15 and the base material 12 Transmission can be suppressed and low thermal resistance and high light reflection can be realized. Moreover, according to the light-emitting device 10 of 1st Embodiment, the lifetime can be extended by suppressing the fall of the performance of the light output and chromaticity by discoloration of the thermal-diffusion member 15 and the base material 12 with the influence of a use environment.

第1実施形態の発光装置10によれば、熱拡散部材15が電気配線部材14よりも広い領域を有するために、熱拡散部材15での熱の広がりが抑制されて低熱抵抗化が図られ、熱を効果的に拡散できる。   According to the light emitting device 10 of the first embodiment, since the heat diffusing member 15 has a wider area than the electric wiring member 14, the spread of heat in the heat diffusing member 15 is suppressed, and the thermal resistance is reduced. Heat can be diffused effectively.

第1実施形態の発光装置10によれば、熱拡散部材15が載置部材17よりも広い領域を有するために、発光素子11から載置部材17へ広がった熱が熱拡散部材15へ放熱されることにより、熱を効果的に拡散できる。   According to the light emitting device 10 of the first embodiment, since the heat diffusion member 15 has a wider area than the mounting member 17, the heat spread from the light emitting element 11 to the mounting member 17 is radiated to the heat diffusion member 15. Therefore, heat can be effectively diffused.

第1実施形態の発光装置10によれば、熱拡散部材15と電気配線部材14とが絶縁部材または空間で分離されることにより、熱拡散部材15として導電性の高熱伝導材料を用いることができる。   According to the light emitting device 10 of the first embodiment, the heat diffusing member 15 and the electric wiring member 14 are separated by an insulating member or space, so that a conductive high heat conductive material can be used as the heat diffusing member 15. .

第1実施形態の発光装置10によれば、発光素子11の直下における熱拡散部材15や基材12での光の吸収や透過を抑制して高光反射を実現できる。   According to the light emitting device 10 of the first embodiment, high light reflection can be realized by suppressing the absorption and transmission of light at the thermal diffusion member 15 and the base material 12 immediately below the light emitting element 11.

第1実施形態の発光装置10によれば、載置部材17が透明または光反射部材16以上の反射率を有することにより、載置部材17による光吸収が抑制されて効率的に光を反射できる。   According to the light emitting device 10 of the first embodiment, when the mounting member 17 is transparent or has a reflectance higher than that of the light reflecting member 16, light absorption by the mounting member 17 is suppressed and light can be efficiently reflected. .

第1実施形態の発光装置10によれば、電気接続部材13と電気配線部材14との接続部に、高反射材18が塗布されることにより、電気配線部材14による光吸収を抑制できる。   According to the light emitting device 10 of the first embodiment, light absorption by the electrical wiring member 14 can be suppressed by applying the highly reflective material 18 to the connection portion between the electrical connection member 13 and the electrical wiring member 14.

第1実施形態の発光装置10によれば、基材12がセラミックスを素材とすることにより、有機材料以上の高熱伝導性と絶縁性を有しているために、ヒートシンク等を介さずに器具に直接固定でき、器具全体として低コスト化できる。   According to the light emitting device 10 of the first embodiment, since the base material 12 is made of ceramics, it has high thermal conductivity and insulating properties higher than those of organic materials. It can be fixed directly and the cost of the entire device can be reduced.

第1実施形態の発光装置10によれば、熱拡散部材15が、高熱伝導材料であるCu,Al,Ag等の基材12以上の高熱伝導率を有する金属材料を素材とすることにより効率的に熱を下げて、発光素子11の直下の熱が下げられるために、光出力を増加できる。   According to the light emitting device 10 of the first embodiment, the heat diffusing member 15 is efficient by using a metal material having a high thermal conductivity, such as Cu, Al, Ag, or the like, which is a high thermal conductivity material, as a raw material. Thus, the heat directly under the light emitting element 11 is lowered, so that the light output can be increased.

第1実施形態の発光装置10によれば、電気配線部材14が、高熱伝導材料であるCu,Al,W,Ni,Pd,Pt,Ag等の金属材料を素材とすることにより効率的に熱を下げて、発光素子直下の熱が下げられるために、光出力を増加できる。   According to the light emitting device 10 of the first embodiment, the electrical wiring member 14 is efficiently heated by using a metal material such as Cu, Al, W, Ni, Pd, Pt, and Ag, which is a high thermal conductivity material. Since the heat directly under the light emitting element is lowered, the light output can be increased.

第1実施形態の発光装置10によれば、光反射部材16が、セラミックス,硫酸バリウム,炭酸カルシウム,酸化亜鉛等を含有し、少なくとも基材12、熱拡散部材15および電気配線部材14以上の反射率を有することにより、光吸収を抑制できる。   According to the light emitting device 10 of the first embodiment, the light reflecting member 16 contains ceramics, barium sulfate, calcium carbonate, zinc oxide or the like, and reflects at least the base material 12, the heat diffusion member 15, and the electric wiring member 14. By having a ratio, light absorption can be suppressed.

第1実施形態の発光装置10によれば、電気接続部材13の長さ寸法が0.1mm以上であって2mm以下であることにより、発光素子11同士の光と熱の干渉を防ぎ、かつ、ボンディングワイヤとしての形状および強度を保つために、光出力を増加でき、長寿命化できる。   According to the light emitting device 10 of the first embodiment, the length dimension of the electrical connection member 13 is 0.1 mm or more and 2 mm or less, thereby preventing light and heat interference between the light emitting elements 11, and In order to maintain the shape and strength of the bonding wire, the light output can be increased and the life can be extended.

第1実施形態の発光装置10によれば、光反射部材の厚みが、10μm以上であることにより、熱拡散部材15、電気配線部材14および基材12による光吸収の影響を抑制できる。   According to the light emitting device 10 of the first embodiment, when the thickness of the light reflecting member is 10 μm or more, the influence of light absorption by the heat diffusing member 15, the electric wiring member 14, and the substrate 12 can be suppressed.

第1実施形態の発光装置10によれば、発光素子11がLEDであることにより、省エネ化でき、低コスト化できる。   According to the light emitting device 10 of the first embodiment, since the light emitting element 11 is an LED, energy saving can be achieved and the cost can be reduced.

第1実施形態の照明装置1によれば、高放熱、高光出力、長寿命および低コスト化できる。   According to the illuminating device 1 of 1st Embodiment, high heat dissipation, high light output, long lifetime, and cost reduction can be achieved.

(第2実施形態)
次に、本発明に係る第2実施形態の発光装置および発光装置を備える照明装置について説明する。
なお、以下の各実施形態において、前述した第1実施形態と重複する構成要素や機能的に同様な構成要素については、図中に同一符号あるいは相当符号を付することによって説明を簡略化あるいは省略する。
(Second Embodiment)
Next, a light emitting device and a lighting device including the light emitting device according to the second embodiment of the present invention will be described.
In the following embodiments, components that are the same as those in the first embodiment described above or components that are functionally similar are denoted by the same or corresponding reference numerals in the drawings, and the description thereof is simplified or omitted. To do.

図3に示すように、本発明に係る第2実施形態の照明装置2に装備される発光装置30は、熱拡散部材31が、電気配線部材を兼ねる。   As shown in FIG. 3, in the light emitting device 30 equipped in the lighting device 2 according to the second embodiment of the present invention, the heat diffusing member 31 also serves as an electric wiring member.

第2実施形態の発光装置30によれば、熱拡散部材31が電気配線部材を兼ねるために、電気配線部材を省略して簡素にできる。   According to the light emitting device 30 of the second embodiment, since the heat diffusion member 31 also serves as an electric wiring member, the electric wiring member can be omitted and simplified.

(第3実施形態)
次に、本発明に係る第3実施形態の発光装置および発光装置を備える照明装置について説明する。
図4に示すように、本発明に係る第3実施形態の照明装置3に装備される発光装置40は、発光素子11が、熱拡散部材15上に載置される。
また、発光装置40は、載置部材17が、熱拡散部材15の露出部分を覆う。すなわち、載置部材17の領域E≧熱拡散部材15露出部である。
そして、発光装置40は、熱拡散部材15の反射率以上の反射率を有する白色シリコン樹脂により成形される。
(Third embodiment)
Next, a light emitting device and a lighting device including the light emitting device according to the third embodiment of the present invention will be described.
As shown in FIG. 4, in the light emitting device 40 equipped in the illumination device 3 according to the third embodiment of the present invention, the light emitting element 11 is placed on the heat diffusing member 15.
In the light emitting device 40, the mounting member 17 covers the exposed portion of the heat diffusing member 15. That is, the region E of the mounting member 17 ≧ exposed portion of the heat diffusion member 15.
The light emitting device 40 is molded from a white silicon resin having a reflectance that is equal to or higher than the reflectance of the heat diffusing member 15.

第3実施形態の発光装置40によれば、発光素子11が熱拡散部材15上に直接載置されることにより、低熱抵抗化が図られて放熱を効果的にできる。   According to the light emitting device 40 of the third embodiment, the light emitting element 11 is directly placed on the heat diffusing member 15, thereby reducing the thermal resistance and effectively radiating heat.

第3実施形態の発光装置40によれば、載置部材17が熱拡散部材15の露出部分を覆うことにより、熱拡散部材15による光吸収が抑制されて光を効率的に反射できる。   According to the light emitting device 40 of the third embodiment, the mounting member 17 covers the exposed portion of the heat diffusing member 15 so that light absorption by the heat diffusing member 15 is suppressed and light can be efficiently reflected.

第3実施形態の発光装置40によれば、載置部材17が熱反射部材15以上の反射率を有することにより、載置部材17による光吸収が抑制されて効率的に光を反射できる。   According to the light emitting device 40 of the third embodiment, when the mounting member 17 has a reflectance equal to or higher than that of the heat reflecting member 15, light absorption by the mounting member 17 is suppressed and light can be efficiently reflected.

(第4実施形態)
次に、本発明に係る第4実施形態の発光装置および発光装置を備える照明装置について説明する。
図5に示すように、本発明に係る第4実施形態の照明装置4に装備される発光装置50は、複数載置された発光素子51,52を備える。
(Fourth embodiment)
Next, a light emitting device and a lighting device including the light emitting device according to the fourth embodiment of the present invention will be described.
As shown in FIG. 5, the light-emitting device 50 with which the illuminating device 4 of 4th Embodiment which concerns on this invention is equipped is equipped with the light emitting elements 51 and 52 mounted in multiple numbers.

第4実施形態の発光装置50によれば、複数の発光素子51,52を載置した場合においても、高放熱、高光出力、長寿命および低コスト化できる。   According to the light emitting device 50 of the fourth embodiment, even when a plurality of light emitting elements 51 and 52 are mounted, high heat dissipation, high light output, long life, and low cost can be achieved.

なお、本発明の発光装置および発光装置を備える照明装置は、前述した各実施形態に限定されるものでなく、適宜な変形や改良等が可能である。   Note that the light-emitting device and the lighting device including the light-emitting device of the present invention are not limited to the above-described embodiments, and appropriate modifications and improvements can be made.

1,2,3,4 照明装置
10,30,40,50 発光装置
11,51,52 発光素子
12 基材
13 電気接続部材
14 電気配線部材
15 熱拡散部材
16 光反射部材
17 載置部材
18 高反射材
1, 2, 3, 4 Illuminating device 10, 30, 40, 50 Light emitting device 11, 51, 52 Light emitting element 12 Base material 13 Electrical connecting member 14 Electrical wiring member 15 Heat diffusion member 16 Light reflecting member 17 Mounting member 18 High Reflective material

Claims (20)

発光素子と、
絶縁性を有し前記発光素子を載置する基材と、
前記発光素子を点灯させるための充電部である電気接続部材および電気配線部材と、
前記発光素子から発せられた熱を広げるために、前記基材の表面の全体を覆うように配置される熱拡散部材と、
前記発光素子から発せられた光を反射させるために前記電気接続部材および前記電気配線部材を接続する箇所を除き、前記熱拡散部材を含めて前記基材の表面の全体を覆うように配置される光反射部材と、
前記発光素子を搭載する載置部材とで構成される発光装置。
A light emitting element;
A base material having insulating properties on which the light emitting element is placed;
An electrical connecting member and an electrical wiring member, which are charging parts for lighting the light emitting element;
In order to spread the heat generated from the light emitting element, a heat diffusing member arranged to cover the entire surface of the base material;
Arranged so as to cover the entire surface of the substrate including the heat diffusing member, except for the place where the electrical connecting member and the electrical wiring member are connected to reflect the light emitted from the light emitting element. A light reflecting member;
A light emitting device comprising a mounting member on which the light emitting element is mounted.
請求項1に記載の発光装置において、
前記熱拡散部材が、前記電気配線部材よりも広い領域を有する発光装置。
The light-emitting device according to claim 1.
The light-emitting device in which the said heat-diffusion member has an area | region wider than the said electrical wiring member.
請求項1または請求項2に記載の発光装置において、
前記熱拡散部材が、前記載置部材よりも広い領域を有する発光装置。
The light-emitting device according to claim 1 or 2,
The light-emitting device in which the said heat-diffusion member has a larger area | region than the mounting member.
請求項1ないし請求項3のうちのいずれか1項に記載の発光装置において、
前記電気配線部材と前記熱拡散部材とが、絶縁部材または空間で分離される発光装置。
The light-emitting device according to any one of claims 1 to 3,
A light emitting device in which the electrical wiring member and the heat diffusion member are separated by an insulating member or a space.
請求項1ないし請求項4のうちのいずれか1項に記載の発光装置において、
前記熱拡散部材が、前記電気配線部材を兼ねる発光装置。
The light-emitting device according to any one of claims 1 to 4,
The light emitting device in which the heat diffusion member also serves as the electric wiring member.
請求項1ないし請求項5のうちのいずれか1項に記載の発光装置において、
前記発光素子が、反射材料上に載置される発光装置。
The light emitting device according to any one of claims 1 to 5,
A light emitting device in which the light emitting element is placed on a reflective material.
請求項1ないし請求項6のうちのいずれか1項に記載の発光装置において、
前記発光素子が、前記熱拡散部材上に載置される発光装置。
The light emitting device according to any one of claims 1 to 6,
A light emitting device in which the light emitting element is placed on the heat diffusing member.
請求項1ないし請求項5および請求項7のうちのいずれか1項に記載の発光装置において、
前記載置部材が、前記熱拡散部材の露出部分を覆う発光装置。
The light emitting device according to any one of claims 1 to 5 and claim 7,
The light-emitting device with which the mounting member covers the exposed part of the said thermal-diffusion member.
請求項1ないし請求項6のうちのいずれか1項に記載の発光装置において、
前記載置部材が、透明または前記光反射部材以上の反射率を有する発光装置。
The light emitting device according to any one of claims 1 to 6,
The light emitting device, wherein the placing member is transparent or has a reflectance higher than that of the light reflecting member.
請求項1ないし請求項5、請求項7および請求項8のうちのいずれか1項に記載の発光装置において、
前記載置部材が、前記熱反射部材以上の反射率を有する発光装置。
In the light-emitting device according to any one of claims 1 to 5, claim 7, and claim 8,
The light-emitting device in which the mounting member has a reflectance higher than that of the heat reflecting member.
請求項1ないし請求項10のうちのいずれか1項に記載の発光装置において、
前記電気接続部材と前記電気配線部材との接続部に高反射材が塗布される発光装置。
The light emitting device according to any one of claims 1 to 10,
A light emitting device in which a highly reflective material is applied to a connection portion between the electrical connection member and the electrical wiring member.
請求項1ないし請求項11のうちのいずれか1項に記載の発光装置において、
前記基材が、セラミックスを素材とする発光装置。
The light emitting device according to any one of claims 1 to 11,
A light emitting device in which the base material is made of ceramics.
請求項1ないし請求項12のうちのいずれか1項に記載の発光装置において、
前記熱拡散部材が、前記基材以上の高熱伝導率を有する金属材料を素材とする発光装置。
The light emitting device according to any one of claims 1 to 12,
A light emitting device in which the heat diffusion member is made of a metal material having a higher thermal conductivity than the base material.
請求項1ないし請求項13のうちのいずれか1項に記載の発光装置において、
前記電気配線部材が、Cu,Al,W,Ni,Pd,PtおよびAgのうちの少なくとも1つの金属材料を素材とする発光装置。
The light emitting device according to any one of claims 1 to 13,
A light emitting device in which the electrical wiring member is made of at least one metal material of Cu, Al, W, Ni, Pd, Pt, and Ag.
請求項1ないし請求項14のうちのいずれか1項に記載の発光装置において、
前記光反射部材が、セラミックス,硫酸バリウム,炭酸カルシウムおよび酸化亜鉛のうちの少なくとも1つを含有し、少なくとも前記基材、前記熱拡散部材および前記電気配線部材以上の反射率を有する発光装置。
The light emitting device according to any one of claims 1 to 14,
The light-emitting device, wherein the light reflecting member contains at least one of ceramics, barium sulfate, calcium carbonate, and zinc oxide, and has a reflectance higher than that of the base material, the heat diffusion member, and the electric wiring member.
請求項1ないし請求項15のうちのいずれか1項に記載の発光装置において、
前記電気配線部材の長さが、0.1mm以上であって、2mm以下である発光装置。
The light-emitting device according to any one of claims 1 to 15,
The length of the said electrical wiring member is 0.1 mm or more, and the light-emitting device which is 2 mm or less.
請求項1ないし請求項16のうちのいずれか1項に記載の発光装置において、
前記光反射部材の厚みが、10μm以上である発光装置。
The light emitting device according to any one of claims 1 to 16,
The light-emitting device whose thickness of the said light reflection member is 10 micrometers or more.
請求項1ないし請求項17のうちのいずれか1項に記載の発光装置において、
前記発光素子が、複数載置される発光装置。
The light emitting device according to any one of claims 1 to 17,
A light emitting device in which a plurality of the light emitting elements are mounted.
請求項1ないし請求項18のうちのいずれか1項に記載の発光装置において、
前記発光素子が、LEDである発光装置。
The light emitting device according to any one of claims 1 to 18,
The light-emitting device whose said light emitting element is LED.
請求項1ないし請求項19のうちのいずれか1項に記載の発光装置を搭載した照明装置。   An illumination device on which the light emitting device according to any one of claims 1 to 19 is mounted.
JP2010257171A 2010-11-17 2010-11-17 Light emitting device and lighting device including light emitting device Expired - Fee Related JP5638922B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010257171A JP5638922B2 (en) 2010-11-17 2010-11-17 Light emitting device and lighting device including light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010257171A JP5638922B2 (en) 2010-11-17 2010-11-17 Light emitting device and lighting device including light emitting device

Publications (2)

Publication Number Publication Date
JP2012109404A true JP2012109404A (en) 2012-06-07
JP5638922B2 JP5638922B2 (en) 2014-12-10

Family

ID=46494707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010257171A Expired - Fee Related JP5638922B2 (en) 2010-11-17 2010-11-17 Light emitting device and lighting device including light emitting device

Country Status (1)

Country Link
JP (1) JP5638922B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015038971A (en) * 2013-07-16 2015-02-26 パナソニックIpマネジメント株式会社 Board, light-emitting device, illumination light source, and luminaire
US9373767B2 (en) 2013-09-30 2016-06-21 Nichia Corporation Light emitting device with light reflecting member having protrusion over bonding ball of wire
US9385288B2 (en) 2013-06-26 2016-07-05 Nichia Corporation Light-emitting device
JP2016162971A (en) * 2015-03-04 2016-09-05 パナソニックIpマネジメント株式会社 Led module
JP2017163053A (en) * 2016-03-10 2017-09-14 パナソニックIpマネジメント株式会社 LED module
JP2017163058A (en) * 2016-03-10 2017-09-14 パナソニックIpマネジメント株式会社 LED module

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07288341A (en) * 1994-04-18 1995-10-31 Nichia Chem Ind Ltd Led display
JP2007513520A (en) * 2003-12-02 2007-05-24 スリーエム イノベイティブ プロパティズ カンパニー Lighting assembly based on light emitting diode
JP2008060428A (en) * 2006-08-31 2008-03-13 Nichia Chem Ind Ltd Light emitting device and its manufacturing method
JP2008244285A (en) * 2007-03-28 2008-10-09 Denka Agsp Kk Light-emitting element mounting substrate and manufacturing method therefor
JP2008258296A (en) * 2007-04-03 2008-10-23 Sony Corp Light-emitting device and light source device
JP2009111273A (en) * 2007-10-31 2009-05-21 Toshiba Lighting & Technology Corp Light-emitting device
JP2009164210A (en) * 2007-12-28 2009-07-23 Hitachi Ltd Mounting substrate, and led light source device with mounting substrate
JP3156732U (en) * 2009-10-29 2010-01-14 柏友照明科技股▲フン▼有限公司 LED package structure that can be soldered by reflow and enhances heat dissipation
WO2010061433A1 (en) * 2008-11-25 2010-06-03 電気化学工業株式会社 Method for manufacturing substrate for light emitting element package, and light emitting element package
WO2010116703A1 (en) * 2009-04-06 2010-10-14 パナソニック株式会社 Nitride semiconductor element and method for production thereof

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07288341A (en) * 1994-04-18 1995-10-31 Nichia Chem Ind Ltd Led display
JP2007513520A (en) * 2003-12-02 2007-05-24 スリーエム イノベイティブ プロパティズ カンパニー Lighting assembly based on light emitting diode
JP2008060428A (en) * 2006-08-31 2008-03-13 Nichia Chem Ind Ltd Light emitting device and its manufacturing method
JP2008244285A (en) * 2007-03-28 2008-10-09 Denka Agsp Kk Light-emitting element mounting substrate and manufacturing method therefor
JP2008258296A (en) * 2007-04-03 2008-10-23 Sony Corp Light-emitting device and light source device
JP2009111273A (en) * 2007-10-31 2009-05-21 Toshiba Lighting & Technology Corp Light-emitting device
JP2009164210A (en) * 2007-12-28 2009-07-23 Hitachi Ltd Mounting substrate, and led light source device with mounting substrate
WO2010061433A1 (en) * 2008-11-25 2010-06-03 電気化学工業株式会社 Method for manufacturing substrate for light emitting element package, and light emitting element package
WO2010116703A1 (en) * 2009-04-06 2010-10-14 パナソニック株式会社 Nitride semiconductor element and method for production thereof
JP3156732U (en) * 2009-10-29 2010-01-14 柏友照明科技股▲フン▼有限公司 LED package structure that can be soldered by reflow and enhances heat dissipation

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9385288B2 (en) 2013-06-26 2016-07-05 Nichia Corporation Light-emitting device
JP2015038971A (en) * 2013-07-16 2015-02-26 パナソニックIpマネジメント株式会社 Board, light-emitting device, illumination light source, and luminaire
US9373767B2 (en) 2013-09-30 2016-06-21 Nichia Corporation Light emitting device with light reflecting member having protrusion over bonding ball of wire
JP2016162971A (en) * 2015-03-04 2016-09-05 パナソニックIpマネジメント株式会社 Led module
JP2017163053A (en) * 2016-03-10 2017-09-14 パナソニックIpマネジメント株式会社 LED module
JP2017163058A (en) * 2016-03-10 2017-09-14 パナソニックIpマネジメント株式会社 LED module

Also Published As

Publication number Publication date
JP5638922B2 (en) 2014-12-10

Similar Documents

Publication Publication Date Title
JP4675906B2 (en) Light-emitting element mounting substrate, light-emitting element storage package, light-emitting device, and lighting device
US7989840B2 (en) Illumination apparatus having a plurality of semiconductor light-emitting devices
JP4706085B2 (en) Semiconductor light emitting module and manufacturing method thereof
JP4771179B2 (en) Lighting device
JP4678391B2 (en) Lighting equipment
JP5638922B2 (en) Light emitting device and lighting device including light emitting device
JP4948818B2 (en) Light emitting device and lighting device
JP5459555B2 (en) Light emitting module and lighting device
JP3872490B2 (en) Light emitting element storage package, light emitting device, and lighting device
JP4818028B2 (en) Light-emitting element mounting substrate, light-emitting element storage package, light-emitting device, and lighting device
WO2011024861A1 (en) Light-emitting device and illuminating device
JP4938255B2 (en) Light emitting element storage package, light source, and light emitting device
JPWO2014083714A1 (en) Mounting substrate and light emitting device using the mounting substrate
JP2008251664A (en) Illumination apparatus
JP2012119436A (en) Lead linear light source and backlight
JP4659515B2 (en) Light-emitting element mounting substrate, light-emitting element storage package, light-emitting device, and lighting device
JP2011134934A (en) Light emitting module, and lighting device
TWI483433B (en) Light emitting module
JP5610398B2 (en) Light emitting element substrate and light emitting device
TWI595685B (en) Light-emitting module
TWI543405B (en) Light-emitting module
JP2012209280A (en) Light-emitting device and illumination device
WO2015151918A1 (en) Light-emitting diode module

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20131021

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20131225

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140320

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140408

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140609

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140701

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140901

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140924

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20141023

LAPS Cancellation because of no payment of annual fees