JP2012099833A - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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JP2012099833A
JP2012099833A JP2011275299A JP2011275299A JP2012099833A JP 2012099833 A JP2012099833 A JP 2012099833A JP 2011275299 A JP2011275299 A JP 2011275299A JP 2011275299 A JP2011275299 A JP 2011275299A JP 2012099833 A JP2012099833 A JP 2012099833A
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substrate
processing
wafer
gas
peripheral
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JP5320455B2 (en
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Yoshifumi Amano
嘉文 天野
Jiro Tojima
治郎 東島
Satoshi Kaneko
聡 金子
Masami Akumoto
正巳 飽本
Takayuki Toshima
孝之 戸島
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Tokyo Electron Ltd
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Abstract

PROBLEM TO BE SOLVED: To accurately and satisfactorily process a predetermined range on a peripheral portion of a substrate.SOLUTION: In the present invention, a substrate processing apparatus (1) for carrying out a process such as etching or washing on a peripheral portion of a substrate (wafer 3) comprises: a periphery processing mechanism (7) for processing the peripheral portion of the substrate (wafer 3); and a substrate holding mechanism (6) for holding the substrate (wafer 3) which rotates relative to the periphery processing mechanism (7). The periphery processing mechanism (7) comprises: a processing liquid supply part (16) which supplies processing liquid onto the peripheral portion of the substrate (wafer 3); a gas jetting part (17) which is arranged adjacent to the processing liquid supply part (16) on a further inner side than the processing liquid supply part (16) with respect to the peripheral portion of the substrate (wafer 3), and which blows gas onto the substrate (wafer 3); and a rinsing liquid supply part (35) which supplies rinsing liquid onto the peripheral portion of the substrate (wafer 3). The gas jetting part (17) is formed in a slit (15) into which the substrate (wafer 3) is inserted.

Description

本発明は、基板の周縁部に対してエッチング又は洗浄などの処理を行うための基板処理装置及び基板処理方法に関するものである。   The present invention relates to a substrate processing apparatus and a substrate processing method for performing processing such as etching or cleaning on a peripheral portion of a substrate.

半導体ウエハや液晶基板などの製造工程においては、基板に積層形成した各種膜の周縁部の剥離を防止するとともに基板と膜との密着性を向上させるために、基板の周縁部の膜をエッチング液で除去するエッチング処理を行っている。また、基板の周縁部に付着したパーティクルによって基板が汚染されてしまうのを防止するために、基板の周縁部のパーティクルを洗浄液で除去する洗浄処理を行っている。   In the manufacturing process of a semiconductor wafer, a liquid crystal substrate, etc., in order to prevent peeling of peripheral portions of various films laminated on the substrate and improve adhesion between the substrate and the film, the peripheral portion of the substrate is etched with an etching solution. Etching treatment to be removed at is performed. In addition, in order to prevent the substrate from being contaminated by particles adhering to the peripheral edge of the substrate, a cleaning process is performed to remove particles on the peripheral edge of the substrate with a cleaning liquid.

これら基板の周縁部に対してエッチングや洗浄などの各種の処理を行うために、従来より、基板処理装置が用いられている。この従来の基板処理装置は、基板の周縁部上方にエッチング液や洗浄液などの処理液を供給するノズルを配設し、回転機構で基板を回転させながらノズルから処理液を基板の周縁部に向けて供給して、処理液で基板の周縁部を処理するように構成している（たとえば、特許文献１参照。）。   Conventionally, a substrate processing apparatus has been used to perform various processes such as etching and cleaning on the peripheral edge of these substrates. In this conventional substrate processing apparatus, a nozzle for supplying a processing solution such as an etching solution or a cleaning solution is disposed above the peripheral edge of the substrate, and the processing liquid is directed from the nozzle toward the peripheral edge of the substrate while rotating the substrate with a rotating mechanism. And the peripheral edge of the substrate is processed with the processing liquid (see, for example, Patent Document 1).

特開２００３−２０３９００号公報JP 2003-203900 A

ところが、処理する基板の大型化に伴って、処理時に基板に反りが生じてしまい、基板の周縁部の所定範囲を精度良く処理することが困難であった。   However, with an increase in the size of the substrate to be processed, the substrate is warped during processing, and it is difficult to accurately process a predetermined range of the peripheral portion of the substrate.

また、基板の周縁部を処理液で迅速に処理するためには、基板の周縁部に処理液を液盛りした状態で保持する必要があり、処理液が基板の周縁部よりも内側にまで流れ出てしまうことがあり、エッチングや洗浄などの処理を行う必要のない範囲まで処理されて、基板の処理不良が発生するおそれがあった。   Further, in order to quickly process the peripheral edge of the substrate with the processing liquid, it is necessary to hold the processing liquid on the peripheral edge of the substrate, and the processing liquid flows out to the inside of the peripheral edge of the substrate. In other words, the substrate may be processed to the extent that it is not necessary to perform etching, cleaning, or other processing, resulting in a substrate processing failure.

そこで、本発明では、基板の周縁部に対してエッチング又は洗浄などの処理を行う基板処理装置において、基板の周縁部を処理するための周縁処理機構と、周縁処理機構に対して相対的に回転する基板を保持するための基板保持機構とを有し、周縁処理機構は、基板の周縁部に処理液を供給する処理液供給部と、処理液供給部よりも基板の周縁部に対して内側に隣設し、基板に向けてガスを噴出するガス噴出部と、基板の周縁部にリンス液を供給するリンス液供給部とを有し、ガス噴出部は、基板を挿通させたスリットに形成することにした。   Therefore, in the present invention, in a substrate processing apparatus that performs processing such as etching or cleaning on the peripheral portion of the substrate, the peripheral processing mechanism for processing the peripheral portion of the substrate and the relative rotation with respect to the peripheral processing mechanism. A substrate holding mechanism for holding the substrate to be processed. And a rinsing liquid supply section for supplying a rinsing liquid to the peripheral edge of the substrate, and the gas ejection section is formed in a slit through which the substrate is inserted. Decided to do.

また、前記ガス噴出部は、前記スリットの前記基板を挟んで反対側にそれぞれ形成することにした。   Further, the gas ejection part is formed on the opposite side of the slit across the substrate.

また、前記スリットに、ガスを噴出するガス噴出口と噴出したガスを吸引するガス吸引口とを交互に格子点上に形成することにした。   In addition, gas outlets for ejecting gas and gas suction ports for sucking out the ejected gas are alternately formed on the lattice points in the slit.

また、前記スリットに、処理液供給部の処理液貯留室とリンス液供給部のリンス液貯留室を連通させることにした。   Further, the treatment liquid storage chamber of the treatment liquid supply unit and the rinse liquid storage chamber of the rinse liquid supply unit are communicated with the slit.

また、前記処理液貯留室に処理液供給口を基板の端部よりも外側に形成し、前記リンス液貯留室にリンス液供給口を基板の端部よりも内側に形成することにした。   Further, the processing liquid supply port is formed outside the end portion of the substrate in the processing liquid storage chamber, and the rinse liquid supply port is formed inside the end portion of the substrate in the rinse liquid storage chamber.

また、本発明では、基板の周縁部に対してエッチング又は洗浄などの処理を行う基板処理方法において、基板の周縁部に配設した周縁処理機構に対して基板を相対的に回転させ、周縁処理機構に形成した処理液供給部から基板の周縁部に処理液を供給するとともに、処理液供給部よりも基板の周縁部に対して内側に隣設するとともに基板を挿通させたスリットに形成したガス噴出部から基板に向けてガスを噴出して、基板の周縁部処理を行い、その後、周縁処理機構に形成したリンス液供給部から基板の周縁部にリンス液を供給して、基板の周縁部のリンス処理を行うことにした。   In the present invention, in the substrate processing method for performing processing such as etching or cleaning on the peripheral portion of the substrate, the peripheral processing is performed by rotating the substrate relative to the peripheral processing mechanism disposed on the peripheral portion of the substrate. Gas supplied to the peripheral edge of the substrate from the processing liquid supply section formed in the mechanism, and adjacent to the inner edge of the peripheral edge of the substrate with respect to the processing liquid supply section, and formed in a slit through which the substrate is inserted A gas is ejected from the ejection portion toward the substrate to perform processing on the peripheral portion of the substrate, and then a rinsing liquid is supplied from the rinsing liquid supply portion formed in the peripheral processing mechanism to the peripheral portion of the substrate. We decided to do the rinsing process.

そして、本発明では、以下に記載する効果を奏する。   And in this invention, there exists an effect described below.

すなわち、本発明では、基板の周縁部に周縁処理機構を配設し、周縁処理機構は、基板の周縁部に処理液を供給する処理液供給部と、基板に向けてガスを噴出するガス噴出部とを有し、ガス噴出部を処理液供給部よりも基板の周縁部に対して内側に隣設しているために、ガス噴出部から噴出するガスによって、基板の反りを矯正して基板の周縁部近傍を平坦に位置精度良く保持することができるので、基板の周縁部の所定範囲を精度良く処理することができる。   That is, in the present invention, a peripheral processing mechanism is provided at the peripheral portion of the substrate, and the peripheral processing mechanism includes a processing liquid supply unit that supplies the processing liquid to the peripheral portion of the substrate, and a gas jet that jets gas toward the substrate. And the gas ejection part is provided adjacent to the inner periphery of the peripheral edge of the substrate with respect to the processing liquid supply part, so that the substrate is corrected by correcting the warpage of the substrate with the gas ejected from the gas ejection part. Since the vicinity of the peripheral portion of the substrate can be held flat with high positional accuracy, a predetermined range of the peripheral portion of the substrate can be processed with high accuracy.

しかも、本発明では、周縁処理機構に基板の周縁部にリンス液を供給するリンス液供給部を処理液供給部とは別個に設けているために、基板の周縁部を処理液で処理した後に直ちにリンス液でリンス処理することができるので、基板の周縁部の処理を短時間で行うことができ、基板処理装置によるスループットを向上させることができる。   Moreover, in the present invention, since the rinsing liquid supply unit for supplying the rinsing liquid to the peripheral part of the substrate is provided separately from the processing liquid supply part in the peripheral processing mechanism, the peripheral part of the substrate is processed with the processing liquid. Since the rinsing process can be performed immediately with the rinsing liquid, the peripheral edge of the substrate can be processed in a short time, and the throughput of the substrate processing apparatus can be improved.

基板処理装置を示す平面図。The top view which shows a substrate processing apparatus. 同一部断面側面図。FIG. 第１の周縁処理装置を示す平面図。The top view which shows a 1st periphery processing apparatus. 同断面側面図。FIG. 同動作説明図。FIG. 第２の周縁処理装置を示す平面図。The top view which shows a 2nd periphery processing apparatus. 同断面側面図。FIG. 同動作説明図。FIG. 薬液処理装置を示す平面図。The top view which shows a chemical | medical solution processing apparatus. 同断面側面図。FIG. 処理液膜調整装置を示す平面図。The top view which shows a process liquid film adjustment apparatus. 同断面側面図。FIG. 周縁処理機構を示す平面図。The top view which shows a periphery processing mechanism. 基板処理装置を示す平面図。The top view which shows a substrate processing apparatus. 周縁処理装置を示す平面図。The top view which shows a periphery processing apparatus. 同断面図。FIG.

以下に、本発明に係る基板処理装置の具体的な構成について図面を参照しながら説明する。   A specific configuration of the substrate processing apparatus according to the present invention will be described below with reference to the drawings.

図１及び図２に示すように、基板処理装置１は、ケーシング２の内部に基板（ここでは、半導体ウエハ（以下、「ウエハ３」という。））をターンテーブル４で吸引保持しながらモーター５で回転させる基板保持機構６を収容するとともに、この基板保持機構６で保持したウエハ３の周縁部に周縁処理機構７を配設している。なお、以下の基板処理装置１では、周縁処理機構７を固定する一方、基板保持機構６でウエハ３を回転するように構成しているが、本発明では周縁処理機構７がウエハ３に対して相対的に回転できる構造となっていればよく、ウエハ３を固定し、周縁処理機構７を回転可能に構成してもよい。   As shown in FIGS. 1 and 2, the substrate processing apparatus 1 includes a motor 5 while sucking and holding a substrate (here, a semiconductor wafer (hereinafter referred to as “wafer 3”)) inside a casing 2 by a turntable 4. The substrate holding mechanism 6 to be rotated is accommodated, and a peripheral processing mechanism 7 is disposed on the peripheral portion of the wafer 3 held by the substrate holding mechanism 6. In the following substrate processing apparatus 1, the peripheral processing mechanism 7 is fixed, while the substrate holding mechanism 6 rotates the wafer 3, but in the present invention, the peripheral processing mechanism 7 is relative to the wafer 3. It is sufficient that the structure is relatively rotatable, and the wafer 3 may be fixed and the peripheral edge processing mechanism 7 may be configured to be rotatable.

周縁処理機構７は、ウエハ３の周縁に第１の周縁処理装置８、第２の周縁処理装置９、薬液処理装置10、処理液膜調整装置11をウエハ３の回転中心を中心にして平面視で時計回りに円周方向に90度ずつずらして順に配設している。ここで、第１の周縁処理装置８は、ウエハ３の周縁部に洗浄液やエッチング液などの処理液を供給するように構成し、第２の周縁処理装置９は、ウエハ３の周縁部に純水やリンス用薬液などのリンス液を供給するように構成し、薬液処理装置10は、第１の周縁処理装置８で供給する処理液と同一又は異なる薬液（たとえば、イソプロピルアルコールなど）を供給するように構成し、処理液膜調整装置11は、ウエハ３の周縁部に空気や不活性ガスなどの処理液膜調整用ガスを供給するように構成している。なお、本発明では、周縁処理機構７に薬液処理装置10と処理液膜調整装置11のいずれか一方又は両方を設けない構成としてもよい。   The peripheral processing mechanism 7 is a plan view of the first peripheral processing device 8, the second peripheral processing device 9, the chemical processing device 10, and the processing liquid film adjusting device 11 on the peripheral edge of the wafer 3 in the plan view centering on the rotation center of the wafer 3. Are arranged in order by shifting 90 degrees clockwise in the circumferential direction. Here, the first peripheral processing device 8 is configured to supply a processing liquid such as a cleaning solution or an etching solution to the peripheral portion of the wafer 3, and the second peripheral processing device 9 is pure on the peripheral portion of the wafer 3. A rinsing liquid such as water or a rinsing liquid is supplied, and the chemical liquid processing apparatus 10 supplies a chemical liquid (for example, isopropyl alcohol) that is the same as or different from the processing liquid supplied by the first peripheral edge processing apparatus 8. The processing liquid film adjusting apparatus 11 is configured to supply a processing liquid film adjusting gas such as air or an inert gas to the peripheral portion of the wafer 3. In the present invention, the peripheral processing mechanism 7 may be configured not to include one or both of the chemical processing apparatus 10 and the processing liquid film adjusting apparatus 11.

以下に、第１の周縁処理装置８、第２の周縁処理装置９、薬液処理装置10、処理液膜調整装置11の具体的な構造について説明する。   Below, the specific structure of the 1st peripheral processing apparatus 8, the 2nd peripheral processing apparatus 9, the chemical | medical solution processing apparatus 10, and the process liquid film adjustment apparatus 11 is demonstrated.

まず、第１の周縁処理装置８の構造について説明すると、第１の周縁処理装置８は、図１及び図２に示すように、進退機構12の先端部に処理ヘッド13を取付けており、進退機構12によって処理ヘッド13を全体的にウエハ３の回転中心に向けてウエハ３の半径方向へ前進又は後退させることができるようになっている。   First, the structure of the first peripheral processing device 8 will be described. As shown in FIGS. 1 and 2, the first peripheral processing device 8 has a processing head 13 attached to the distal end portion of the advance / retreat mechanism 12, and the advance / retreat is performed. The mechanism 12 can advance or retract the processing head 13 in the radial direction of the wafer 3 toward the rotation center of the wafer 3 as a whole.

この処理ヘッド13は、図３〜図５に示すように、矩形箱型状のケーシング14の先端部（前端部）にウエハ３の厚みよりも広い上下幅のスリット15をウエハ３と平行に水平状に形成しており、ウエハ３との間にわずかな間隙（ここでは、約50μm。）を形成した状態でスリット15にウエハ３を挿通させることができ、しかも、その状態で基板保持機構６によってウエハ３を回転させることができ、また、進退機構12によって処理ヘッド13をスリット15の内部にウエハ３を挿通させた位置とウエハ３を挿通させない位置に進退させることができるようになっている。   As shown in FIGS. 3 to 5, the processing head 13 has a slit 15 having a vertical width wider than the thickness of the wafer 3 at the front end (front end) of the rectangular box-shaped casing 14 in parallel with the wafer 3. The wafer 3 can be inserted into the slit 15 in a state where a slight gap (about 50 μm in this case) is formed between the wafer 3 and the substrate holding mechanism 6 in that state. The wafer 3 can be rotated by the forward / backward mechanism 12, and the advance / retreat mechanism 12 can move the processing head 13 back and forth between the position where the wafer 3 is inserted into the slit 15 and the position where the wafer 3 is not inserted. .

また、処理ヘッド13には、ウエハ３の周縁部に洗浄液やエッチング液などの処理液を供給するための処理液供給部16とウエハ３に向けて空気や不活性ガスなどのガスを噴出するための第１のガス噴出部17とを隣り合わせた状態で設けており、処理ヘッド13の中央部に処理液供給部16を形成するとともに、処理液供給部16よりもウエハ３の周縁部に対して内側に第１のガス噴出部17を形成している。ここで、処理液供給部16及び第１のガス噴出部17は、それぞれ所定の上下幅を有してウエハ３を挿通可能な形状に形成しており、第１のガス噴出部17のウエハ３と対向する上下幅を処理液供給部16のウエハ３と対向する上下幅よりも狭くして、処理液供給部16と第１のガス噴出部17との間に上下幅が直角状に変化するエッジ部18を形成している。また、処理液供給部16は、表面を親水性素材でコーティングしており、一方、第１のガス噴出部17は、表面を撥水性素材でコーティングしている。   In addition, a processing liquid supply unit 16 for supplying a processing liquid such as a cleaning liquid or an etching liquid to the peripheral portion of the wafer 3 and a gas such as air or an inert gas are jetted to the processing head 13 toward the wafer 3. The first gas ejection part 17 is provided adjacent to each other, and a processing liquid supply part 16 is formed at the central part of the processing head 13, and at the periphery of the wafer 3 rather than the processing liquid supply part 16. A first gas ejection portion 17 is formed inside. Here, each of the processing liquid supply unit 16 and the first gas ejection unit 17 has a predetermined vertical width and is formed in a shape that allows the wafer 3 to be inserted therethrough, and the wafer 3 of the first gas ejection unit 17 is formed. The vertical width opposite to the wafer 3 of the processing liquid supply unit 16 is narrower than that of the processing liquid supply unit 16, and the vertical width changes between the processing liquid supply unit 16 and the first gas ejection unit 17 in a right angle. An edge portion 18 is formed. The treatment liquid supply unit 16 has a surface coated with a hydrophilic material, while the first gas ejection unit 17 has a surface coated with a water repellent material.

処理液供給部16は、処理ヘッド13の平面視中央部に処理ヘッド13の進退方向（ウエハ３の半径方向）へ向けて伸延させるとともにスリット15（第１のガス噴出部17）に連通させた処理液貯留室19を形成し、この処理液貯留室19の上下幅をスリット15よりも広い上下幅に形成している。このように、処理液貯留室19は、ウエハ３の表裏両面からの間隔を第１のガス噴出部17のスリット15におけるウエハ３の表裏両面からの間隔よりも断面視で直角状に急激に拡大して形成している。また、処理液貯留室19の上部には、処理液を供給するための処理液供給口20を形成し、処理液貯留室19の後部には、処理液を排出するための処理液排出口21を形成している。ここで、処理液供給口20は、ウエハ３の端部よりも外側に形成して、ウエハ３の表面に処理液が直接供給されないようにして、処理液の吐出力によってウエハ３がダメージを受けないようにし、また、処理液排出口21は、ウエハ３の表面よりも上方に形成して、供給された処理液が処理液貯留室19の内部で貯留するようにしている。なお、処理液供給口20は、処理液貯留室19に連通して形成していればよく、処理液貯留室19の上部に形成した場合に限られず、処理液貯留室19の下部に形成してもよい。また、処理液排出口21も、処理液貯留室19に連通していればよく、処理液貯留室19の上部に形成した場合に限られず、処理液貯留室19の下部に形成してもよい。さらに、処理液供給口20と処理液排出口21は、ウエハ３を挟んで反対側に対向させた位置にそれぞれ形成してもよく、また、処理液排出口21は、ウエハ３の端部よりも内側に形成してもよい。   The processing liquid supply unit 16 extends in the central portion of the processing head 13 in a plan view in the forward / backward direction of the processing head 13 (radial direction of the wafer 3) and communicates with the slit 15 (first gas ejection unit 17). A processing liquid storage chamber 19 is formed, and the vertical width of the processing liquid storage chamber 19 is formed to be wider than the slit 15. As described above, the treatment liquid storage chamber 19 has the gap between the front and back surfaces of the wafer 3 rapidly expanded in a right-angled manner in a cross-sectional view than the distance from the front and back surfaces of the wafer 3 in the slit 15 of the first gas ejection portion 17. And formed. Further, a processing liquid supply port 20 for supplying a processing liquid is formed in the upper part of the processing liquid storage chamber 19, and a processing liquid discharge port 21 for discharging the processing liquid is provided in the rear part of the processing liquid storage chamber 19. Is forming. Here, the processing liquid supply port 20 is formed outside the edge of the wafer 3 so that the processing liquid is not directly supplied to the surface of the wafer 3, and the wafer 3 is damaged by the discharge force of the processing liquid. In addition, the processing liquid discharge port 21 is formed above the surface of the wafer 3 so that the supplied processing liquid is stored in the processing liquid storage chamber 19. The treatment liquid supply port 20 only needs to be formed so as to communicate with the treatment liquid storage chamber 19, and is not limited to being formed in the upper part of the treatment liquid storage chamber 19, but is formed in the lower part of the treatment liquid storage chamber 19. May be. Further, the processing liquid discharge port 21 is not limited to the case where it is communicated with the processing liquid storage chamber 19 and is formed in the upper part of the processing liquid storage chamber 19, and may be formed in the lower part of the processing liquid storage chamber 19. . Further, the processing liquid supply port 20 and the processing liquid discharge port 21 may be formed at positions opposite to each other across the wafer 3, and the processing liquid discharge port 21 is formed from the end of the wafer 3. May also be formed inside.

また、処理液供給部16は、処理液供給口20に処理液供給源22を開閉バルブ23を介して連通連結する一方、処理液排出口21に吸引機24を連通連結している。   Further, the processing liquid supply unit 16 has a processing liquid supply source 22 connected to the processing liquid supply port 20 through an open / close valve 23 and a suction device 24 connected to the processing liquid discharge port 21.

そして、処理液供給部16は、処理液供給源22から供給される処理液を処理液貯留室19に一時的に貯留し、処理液貯留室19において貯留した処理液にウエハ３の周縁部を浸漬させることでウエハ３の周縁部を処理液で周縁処理することができ、吸引機24によって処理液を処理液貯留室19から排出することができるようになっている。   Then, the processing liquid supply unit 16 temporarily stores the processing liquid supplied from the processing liquid supply source 22 in the processing liquid storage chamber 19, and adds the peripheral portion of the wafer 3 to the processing liquid stored in the processing liquid storage chamber 19. By soaking, the peripheral edge of the wafer 3 can be peripherally processed with the processing liquid, and the processing liquid can be discharged from the processing liquid storage chamber 19 by the suction device 24.

一方、第１のガス噴出部17は、処理液貯留室19よりも狭い上下幅のスリット15にガスを噴出するガス噴射口25と噴出したガスを吸引するガス吸引口26とを交互に格子点上に上下にそれぞれ形成し、ガス噴射口25にガス供給源27を圧力制御弁28を介して連通連結するとともに、ガス吸引口26に吸引機29を圧力制御弁30を介して連通連結している。   On the other hand, the first gas ejection section 17 has lattice points alternately having gas ejection ports 25 for ejecting gas and slits 15 for sucking the ejected gas into slits 15 having a narrower vertical width than the processing liquid storage chamber 19. The gas supply port 27 is connected to the gas injection port 25 via the pressure control valve 28, and the suction device 29 is connected to the gas suction port 26 via the pressure control valve 30. Yes.

そして、第１のガス噴出部17は、ガス供給源27から供給されるガスをガス噴射口25からウエハ３の表面（上面及び下面）に向けて噴出するとともに、噴出したガスを吸引機29によってガス吸引口26から外部に排出し、これにより、ウエハ３の周縁部近傍の反りを強制的に矯正するとともに、処理液貯留室19の所定位置（ここでは、スリット15の中央）にウエハ３を位置させて処理液による処理が良好に行えるようにしている。   The first gas ejection unit 17 ejects the gas supplied from the gas supply source 27 from the gas injection port 25 toward the surface (upper surface and lower surface) of the wafer 3, and the ejected gas is sucked by the suction device 29. By discharging the gas from the gas suction port 26 to the outside, the warpage in the vicinity of the peripheral edge of the wafer 3 is forcibly corrected, and the wafer 3 is placed at a predetermined position (here, the center of the slit 15) of the processing liquid storage chamber 19. It is positioned so that the processing with the processing liquid can be performed satisfactorily.

次に、第２の周縁処理装置９の構造について説明すると、第２の周縁処理装置９は、図１及び図２に示すように、進退機構31の先端部に処理ヘッド32を取付けており、進退機構31によって処理ヘッド32を全体的にウエハ３の回転中心に向けてウエハ３の半径方向へ前進又は後退させることができるようになっている。   Next, the structure of the second peripheral edge processing device 9 will be described. As shown in FIGS. 1 and 2, the second peripheral edge processing device 9 has a processing head 32 attached to the distal end portion of the advance / retreat mechanism 31. By the advance / retreat mechanism 31, the processing head 32 can be moved forward or backward in the radial direction of the wafer 3 toward the rotation center of the wafer 3 as a whole.

この処理ヘッド32は、図６〜図８に示すように、矩形箱型状のケーシング33の先端部（前端部）にウエハ３の厚みよりも広い上下幅のスリット34をウエハ３と平行に水平状に形成しており、ウエハ３との間にわずかな間隙（ここでは、約50μm。）を形成した状態でスリット34にウエハ３を挿通させることができ、しかも、その状態で基板保持機構６によってウエハ３を回転させることができ、また、進退機構31によって処理ヘッド32をスリット34の内部にウエハ３を挿通させた位置とウエハ３を挿通させない位置に進退させることができるようになっている。   As shown in FIGS. 6 to 8, the processing head 32 has a slit 34 having a vertical width wider than the thickness of the wafer 3 at the front end (front end) of a rectangular box-shaped casing 33 in parallel with the wafer 3. The wafer 3 can be inserted into the slit 34 with a slight gap (about 50 μm in this case) formed between the wafer 3 and the substrate holding mechanism 6 in that state. The wafer 3 can be rotated by the rotation mechanism 31 and the advance / retreat mechanism 31 can move the processing head 32 back and forth between the position where the wafer 3 is inserted into the slit 34 and the position where the wafer 3 is not inserted. .

また、処理ヘッド32には、ウエハ３の周縁部に純水やリンス用薬液などのリンス液を供給するためのリンス液供給部35とウエハ３に向けて空気や不活性ガスなどのガスを噴出するための第２のガス噴出部36とを隣り合わせた状態で設けており、処理ヘッド32の中央部にリンス液供給部35を形成するとともに、リンス液供給部35よりもウエハ３の周縁部に対して内側に第２のガス噴出部36を形成している。ここで、リンス液供給部35及び第２のガス噴出部36は、それぞれ所定の上下幅を有してウエハ３を挿通可能な形状に形成しており、第２のガス噴出部36のウエハ３と対向する上下幅をリンス液供給部35のウエハ３と対向する上下幅よりも狭くして、リンス液供給部35と第２のガス噴出部36との間に上下幅が直角状に変化するエッジ部37を形成している。また、リンス液供給部35は、表面を親水性素材でコーティングしており、一方、第２のガス噴出部36は、表面を撥水性素材でコーティングしている。   In addition, a rinsing liquid supply unit 35 for supplying a rinsing liquid such as pure water or a rinsing liquid to the peripheral edge of the wafer 3 and a gas such as air or an inert gas are ejected to the processing head 32 toward the wafer 3. The second gas jetting part 36 for adjoining is provided in a state of being adjacent to each other, and a rinsing liquid supply part 35 is formed in the central part of the processing head 32 and at the peripheral part of the wafer 3 more than the rinsing liquid supply part 35 On the other hand, a second gas ejection portion 36 is formed on the inner side. Here, each of the rinsing liquid supply unit 35 and the second gas ejection unit 36 has a predetermined vertical width and is formed in a shape that allows the wafer 3 to be inserted therethrough, and the wafer 3 of the second gas ejection unit 36. The vertical width opposed to the wafer 3 of the rinsing liquid supply unit 35 is narrower than the vertical width of the rinsing liquid supply unit 35 opposed to the wafer 3, and the vertical width changes between the rinsing liquid supply unit 35 and the second gas ejection unit 36 in a right angle. An edge portion 37 is formed. The rinsing liquid supply unit 35 has a surface coated with a hydrophilic material, while the second gas ejection unit 36 has a surface coated with a water repellent material.

リンス液供給部35は、処理ヘッド32の平面視中央部に処理ヘッド32の進退方向（ウエハ３の半径方向）へ向けて伸延させるとともにスリット34（第２のガス噴出部36）に連通させたリンス液貯留室38を形成し、このリンス液貯留室38の上下幅をスリット34よりも広い上下幅に形成している。このように、リンス液貯留室38は、ウエハ３の表裏両面からの間隔を第２のガス噴出部36のスリット34におけるウエハ３の表裏両面からの間隔よりも断面視で直角状に急激に拡大して形成している。リンス液貯留室38は、先端部（ウエハ３の中心側）を処理液貯留室19の先端部（ウエハ３の中心側）よりもウエハ３の周端部に対して内側に伸延させて形成して、リンス液供給部35からウエハ３の周縁部に供給されるリンス液が処理液供給部16からウエハ３の周縁部に供給される処理液よりもウエハ３の周縁部に対して内側になるようにしている。このことにより、ウエハ３上の処理液をリンス液により確実にリンス処理できる。また、リンス液貯留室38の上部には、リンス液を供給するためのリンス液供給口39を形成し、リンス液貯留室38の後部には、リンス液を排出するためのリンス液排出口40を形成している。ここで、リンス液供給口39は、ウエハ３の端部よりも内側に形成して、ウエハ３の表面にリンス液が直接供給されるようにして、リンス液でウエハ３の表面を迅速にリンス処理できるようにし、また、リンス液排出口40は、ウエハ３の表面よりも上方に形成して、供給されたリンス液がリンス液貯留室38の内部で貯留するようにしている。なお、リンス液供給口39は、リンス液貯留室38に連通して形成していればよく、リンス液貯留室38の上部に形成した場合に限られず、リンス液貯留室38の下部に形成してもよい。また、リンス液排出口40も、リンス液貯留室38に連通していればよく、リンス液貯留室38の上部に形成した場合に限られず、リンス液貯留室38の下部に形成してもよい。さらに、リンス液供給口39とリンス液排出口40は、ウエハ３を挟んで反対側に対向させた位置にそれぞれ形成してもよい。   The rinsing liquid supply unit 35 is extended in the central portion of the processing head 32 in a plan view in the forward / backward direction (radial direction of the wafer 3) of the processing head 32 and communicated with the slit 34 (second gas ejection unit 36). A rinse liquid storage chamber 38 is formed, and the vertical width of the rinse liquid storage chamber 38 is formed wider than the slit 34. In this manner, the rinse liquid storage chamber 38 has the gap between the front and back surfaces of the wafer 3 rapidly expanded in a right-angle shape in a cross-sectional view than the distance from the front and back surfaces of the wafer 3 in the slit 34 of the second gas ejection portion 36. And formed. The rinse liquid storage chamber 38 is formed by extending the front end portion (center side of the wafer 3) to the inner side with respect to the peripheral end portion of the wafer 3 than the front end portion of the processing liquid storage chamber 19 (center side of the wafer 3). Thus, the rinsing liquid supplied from the rinsing liquid supply unit 35 to the peripheral edge of the wafer 3 is located inside the peripheral edge of the wafer 3 with respect to the processing liquid supplied from the processing liquid supply unit 16 to the peripheral edge of the wafer 3. I am doing so. As a result, the treatment liquid on the wafer 3 can be reliably rinsed with the rinse liquid. Further, a rinsing liquid supply port 39 for supplying a rinsing liquid is formed in the upper part of the rinsing liquid storage chamber 38, and a rinsing liquid discharge port 40 for discharging the rinsing liquid is formed in the rear part of the rinsing liquid storage chamber 38. Is forming. Here, the rinsing liquid supply port 39 is formed inside the end portion of the wafer 3 so that the rinsing liquid is directly supplied to the surface of the wafer 3 so that the surface of the wafer 3 is quickly rinsed with the rinsing liquid. The rinse liquid discharge port 40 is formed above the surface of the wafer 3 so that the supplied rinse liquid is stored in the rinse liquid storage chamber 38. The rinse liquid supply port 39 may be formed so as to communicate with the rinse liquid storage chamber 38, and is not limited to the case where it is formed in the upper part of the rinse liquid storage chamber 38, and is formed in the lower part of the rinse liquid storage chamber 38. May be. Further, the rinse liquid discharge port 40 is not limited to the case where it is communicated with the rinse liquid storage chamber 38 and formed above the rinse liquid storage chamber 38, and may be formed below the rinse liquid storage chamber 38. . Further, the rinsing liquid supply port 39 and the rinsing liquid discharge port 40 may be respectively formed at positions facing the opposite sides across the wafer 3.

また、リンス液供給部35は、リンス液供給口39にリンス液供給源41を開閉バルブ42を介して連通連結する一方、リンス液排出口40に吸引機43を連通連結している。   The rinsing liquid supply unit 35 communicates and connects the rinsing liquid supply source 41 to the rinsing liquid supply port 39 via the opening / closing valve 42 and the suction device 43 to the rinsing liquid discharge port 40.

そして、リンス液供給部35は、リンス液供給源41から供給されるリンス液をリンス液貯留室38に一時的に貯留し、リンス液貯留室38において貯留したリンス液にウエハ３の周縁部を浸漬させることでウエハ３の周縁部をリンス液でリンス処理することができ、吸引機43によってリンス液をリンス液貯留室38から排出することができるようになっている。   The rinsing liquid supply unit 35 temporarily stores the rinsing liquid supplied from the rinsing liquid supply source 41 in the rinsing liquid storage chamber 38, and the peripheral portion of the wafer 3 is added to the rinsing liquid stored in the rinsing liquid storage chamber 38. By immersing, the peripheral portion of the wafer 3 can be rinsed with the rinse liquid, and the rinse liquid can be discharged from the rinse liquid storage chamber 38 by the suction device 43.

一方、第２のガス噴出部36は、リンス液貯留室38よりも狭い上下幅のスリット34にガスを噴出するガス噴射口44と噴出したガスを吸引するガス吸引口45とを交互に格子点上に上下にそれぞれ形成し、ガス噴射口44にガス供給源46を圧力制御弁47を介して連通連結するとともに、ガス吸引口45に吸引機48を圧力制御弁49を介して連通連結している。   On the other hand, the second gas ejection portion 36 has lattice points alternately having gas ejection ports 44 for ejecting gas and slits 34 for sucking the ejected gas into slits 34 having a narrower vertical width than the rinse liquid storage chamber 38. The gas supply port 46 is connected to the gas injection port 44 via the pressure control valve 47, and the suction device 48 is connected to the gas suction port 45 via the pressure control valve 49. Yes.

そして、第２のガス噴出部36は、ガス供給源46から供給されるガスをガス噴射口44からウエハ３の表面（上面及び下面）に向けて噴出するとともに、噴出したガスを吸引機48によってガス吸引口45から外部に排出し、これにより、ウエハ３の周縁部近傍の反りを強制的に矯正するとともに、リンス液貯留室38の所定位置（ここでは、スリット34の中央）にウエハ３を位置させてリンス処理が良好に行えるようにしている。   The second gas ejection unit 36 ejects the gas supplied from the gas supply source 46 toward the surface (upper surface and lower surface) of the wafer 3 from the gas injection port 44, and the ejected gas by the suction device 48. By discharging the gas from the gas suction port 45 to the outside, the warpage in the vicinity of the peripheral portion of the wafer 3 is forcibly corrected, and the wafer 3 is placed at a predetermined position (here, the center of the slit 34) in the rinse liquid storage chamber 38. It is positioned so that the rinsing process can be performed satisfactorily.

次に、薬液処理装置10の構造について説明すると、薬液処理装置10は、図１及び図２に示すように、進退機構50の先端部に処理ヘッド51を取付けており、進退機構50によって処理ヘッド51を全体的にウエハ３の回転中心に向けてウエハ３の半径方向へ前進又は後退させることができるようになっている。   Next, the structure of the chemical processing apparatus 10 will be described. In the chemical processing apparatus 10, as shown in FIGS. 1 and 2, a processing head 51 is attached to the distal end portion of the advance / retreat mechanism 50. 51 can be moved forward or backward in the radial direction of the wafer 3 toward the center of rotation of the wafer 3 as a whole.

この処理ヘッド51は、図９及び図１０に示すように、矩形箱型状のケーシング52の先端部（前端部）にウエハ３の厚みよりも広い上下幅のスリット53をウエハ３と平行に水平状に形成しており、ウエハ３との間にわずかな間隙（ここでは、約50μm。）を形成した状態でスリット53にウエハ３を挿通させることができ、しかも、その状態で基板保持機構６によってウエハ３を回転させることができ、また、進退機構50によって処理ヘッド51をスリット53の内部にウエハ３を挿通させた位置とウエハ３を挿通させない位置に進退させることができるようになっている。   As shown in FIGS. 9 and 10, the processing head 51 is provided with a slit 53 having a vertical width wider than the thickness of the wafer 3 at the front end (front end) of a rectangular box-shaped casing 52 in parallel with the wafer 3. The wafer 3 can be inserted into the slit 53 with a slight gap (about 50 μm in this case) formed between the wafer 3 and the substrate holding mechanism 6 in that state. Thus, the wafer 3 can be rotated, and the processing head 51 can be advanced and retracted by the advance / retreat mechanism 50 to a position where the wafer 3 is inserted into the slit 53 and a position where the wafer 3 is not inserted. .

また、処理ヘッド51には、ウエハ３の周縁部に薬液を供給するための薬液供給部54とウエハ３に向けて空気や不活性ガスなどのガスを噴出するための第３のガス噴出部55とを隣り合わせた状態で設けており、処理ヘッド51の中央部に薬液供給部54を形成するとともに、薬液供給部54よりもウエハ３の周縁部に対して内側に第３のガス噴出部55を形成している。ここで、薬液供給部54及び第３のガス噴出部55は、それぞれ所定の上下幅を有してウエハ３を挿通可能な形状に形成しており、第３のガス噴出部55のウエハ３と対向する上下幅を薬液供給部54のウエハ３と対向する上下幅よりも狭くして、薬液供給部54と第３のガス噴出部55との間に上下幅が直角状に変化するエッジ部56を形成している。また、薬液供給部54は、表面を親水性素材でコーティングしており、一方、第３のガス噴出部55は、表面を撥水性素材でコーティングしている。   The processing head 51 includes a chemical solution supply unit 54 for supplying a chemical solution to the peripheral portion of the wafer 3 and a third gas ejection unit 55 for ejecting a gas such as air or an inert gas toward the wafer 3. Are provided adjacent to each other, and a chemical solution supply unit 54 is formed at the center of the processing head 51, and a third gas ejection unit 55 is provided inside the peripheral edge of the wafer 3 with respect to the chemical solution supply unit 54. Forming. Here, each of the chemical solution supply unit 54 and the third gas ejection unit 55 has a predetermined vertical width so that the wafer 3 can be inserted, and the chemical gas supply unit 54 and the third gas ejection unit 55 are connected to the wafer 3 of the third gas ejection unit 55. The opposing vertical width is narrower than the vertical width of the chemical solution supply unit 54 facing the wafer 3, and the edge portion 56 whose vertical width changes in a right angle between the chemical solution supply unit 54 and the third gas ejection unit 55. Is forming. The chemical solution supply unit 54 has a surface coated with a hydrophilic material, while the third gas ejection unit 55 has a surface coated with a water repellent material.

薬液供給部54は、処理ヘッド51の平面視中央部に処理ヘッド51の進退方向（ウエハ３の半径方向）へ向けて伸延させるとともにスリット53（第３のガス噴出部55）に連通させた薬液貯留室57を形成し、この薬液貯留室57の上下幅をスリット53よりも広い上下幅に形成している。このように、薬液貯留室57は、ウエハ３の表裏両面からの間隔を第３のガス噴出部55のスリット53におけるウエハ３の表裏両面からの間隔よりも断面視で直角状に急激に拡大して形成している。また、薬液貯留室57の上部には、薬液を供給するための薬液供給口58を形成し、薬液貯留室57の後部には、薬液を排出するための薬液排出口59を形成している。ここで、薬液供給口58は、ウエハ３の端部よりも外側に形成して、ウエハ３の表面に薬液が直接供給されないようにして、薬液の吐出力によってウエハ３がダメージを受けないようにし、また、薬液排出口59は、ウエハ３の表面よりも上方に形成して、供給された薬液が薬液貯留室57の内部で貯留するようにしている。なお、薬液供給口58は、薬液貯留室57に連通して形成していればよく、薬液貯留室57の上部に形成した場合に限られず、薬液貯留室57の下部に形成してもよい。また、薬液排出口59も、薬液貯留室57に連通していればよく、薬液貯留室57の上部に形成した場合に限られず、薬液貯留室57の下部に形成してもよい。さらに、薬液供給口58と薬液排出口59は、ウエハ３を挟んで反対側に対向させた位置にそれぞれ形成してもよく、また、薬液排出口59は、ウエハ３の端部よりも内側に形成してもよい。   The chemical solution supply unit 54 extends in the central portion of the processing head 51 in a plan view in the forward / backward direction (radial direction of the wafer 3) of the processing head 51 and communicates with the slit 53 (third gas ejection unit 55). A storage chamber 57 is formed, and the vertical width of the chemical solution storage chamber 57 is formed wider than the slit 53. As described above, the chemical solution storage chamber 57 has the gap between the front and back surfaces of the wafer 3 abruptly enlarged at a right angle in a cross-sectional view as compared with the distance from the front and back surfaces of the wafer 3 in the slit 53 of the third gas ejection portion 55. Formed. A chemical solution supply port 58 for supplying a chemical solution is formed in the upper part of the chemical solution storage chamber 57, and a chemical solution discharge port 59 for discharging the chemical solution is formed in the rear part of the chemical solution storage chamber 57. Here, the chemical solution supply port 58 is formed outside the end portion of the wafer 3 so that the chemical solution is not directly supplied to the surface of the wafer 3 so that the wafer 3 is not damaged by the discharge force of the chemical solution. The chemical solution outlet 59 is formed above the surface of the wafer 3 so that the supplied chemical solution is stored inside the chemical solution storage chamber 57. The chemical solution supply port 58 may be formed in communication with the chemical solution storage chamber 57, and is not limited to being formed in the upper portion of the chemical solution storage chamber 57, and may be formed in the lower portion of the chemical solution storage chamber 57. Further, the chemical solution discharge port 59 is only required to communicate with the chemical solution storage chamber 57, and is not limited to the case where it is formed in the upper portion of the chemical solution storage chamber 57, and may be formed in the lower portion of the chemical solution storage chamber 57. Further, the chemical solution supply port 58 and the chemical solution discharge port 59 may be formed respectively at positions facing the opposite sides across the wafer 3, and the chemical solution discharge port 59 is located inside the end portion of the wafer 3. It may be formed.

また、薬液供給部54は、薬液供給口58に薬液供給源60を開閉バルブ61を介して連通連結する一方、薬液排出口59に吸引機62を連通連結している。   Further, the chemical solution supply unit 54 has a chemical solution supply source 60 connected to the chemical solution supply port 58 through an open / close valve 61 and a suction device 62 connected to the chemical solution discharge port 59.

そして、薬液供給部54は、薬液供給源60から供給される薬液を薬液貯留室57に一時的に貯留し、薬液貯留室57において貯留した薬液にウエハ３の周縁部を浸漬させることでウエハ３の周縁部を薬液で薬液処理することができ、吸引機62によって薬液を薬液貯留室57から排出することができるようになっている。   Then, the chemical solution supply unit 54 temporarily stores the chemical solution supplied from the chemical solution supply source 60 in the chemical solution storage chamber 57 and immerses the peripheral portion of the wafer 3 in the chemical solution stored in the chemical solution storage chamber 57. The peripheral portion can be treated with a chemical solution, and the chemical solution can be discharged from the chemical solution storage chamber 57 by the suction device 62.

一方、第３のガス噴出部55は、薬液貯留室57よりも狭い上下幅のスリット53にガスを噴出するガス噴射口63と噴出したガスを吸引するガス吸引口64とを交互に格子点上に上下にそれぞれ形成し、ガス噴射口63にガス供給源65を圧力制御弁66を介して連通連結するとともに、ガス吸引口64に吸引機67を圧力制御弁68を介して連通連結している。   On the other hand, the third gas ejection part 55 has a gas injection port 63 for ejecting gas and a gas suction port 64 for sucking the ejected gas alternately on the lattice points. The gas supply source 65 is connected to the gas injection port 63 via the pressure control valve 66, and the suction device 67 is connected to the gas suction port 64 via the pressure control valve 68. .

そして、第３のガス噴出部55は、ガス供給源65から供給されるガスをガス噴射口63からウエハ３の表面（上面及び下面）に向けて噴出するとともに、噴出したガスを吸引機67によってガス吸引口64から外部に排出し、これにより、ウエハ３の周縁部近傍の反りを強制的に矯正するとともに、薬液貯留室57の所定位置（ここでは、スリット53の中央）にウエハ３を位置させて薬液による処理が良好に行えるようにしている。   The third gas ejection unit 55 ejects the gas supplied from the gas supply source 65 from the gas injection port 63 toward the front surface (upper surface and lower surface) of the wafer 3, and the ejected gas is sucked by the suction device 67. The gas is discharged from the gas suction port 64 to the outside, thereby forcibly correcting the warpage in the vicinity of the peripheral edge of the wafer 3 and positioning the wafer 3 at a predetermined position (here, the center of the slit 53) of the chemical solution storage chamber 57. Therefore, the treatment with the chemical solution can be performed satisfactorily.

次に、処理液膜調整装置11の構造について説明すると、処理液膜調整装置11は、図１に示すように、進退機構69の先端部に処理ヘッド70を取付けており、進退機構69によって処理ヘッド70を全体的にウエハ３の回転中心に向けてウエハ３の半径方向へ前進又は後退させることができるようになっている。   Next, the structure of the processing liquid film adjusting device 11 will be described. As shown in FIG. 1, the processing liquid film adjusting device 11 has a processing head 70 attached to the distal end portion of the advance / retreat mechanism 69, The head 70 can be moved forward or backward in the radial direction of the wafer 3 toward the rotation center of the wafer 3 as a whole.

この処理ヘッド70は、図11及び図12に示すように、矩形箱型状のケーシング71の先端部（前端部）にウエハ３の厚みよりも広い上下幅のスリット72をウエハ３と平行に水平状に形成しており、ウエハ３との間にわずかな間隙（ここでは、約50μm。）を形成した状態でスリット72にウエハ３を挿通させることができ、しかも、その状態で基板保持機構６によってウエハ３を回転させることができ、また、進退機構69によって処理ヘッド70をスリット72の内部にウエハ３を挿通させた位置とウエハ３を挿通させない位置に進退させることができるようになっている。   As shown in FIGS. 11 and 12, the processing head 70 has a slit 72 having a vertical width wider than the thickness of the wafer 3 at the front end (front end) of a rectangular box-shaped casing 71 in parallel with the wafer 3. The wafer 3 can be inserted into the slit 72 in a state where a slight gap (about 50 μm in this case) is formed between the wafer 3 and the substrate holding mechanism 6 in that state. The wafer 3 can be rotated by the forward / backward mechanism 69, and the processing head 70 can be moved back and forth between the position where the wafer 3 is inserted into the slit 72 and the position where the wafer 3 is not inserted. .

また、処理ヘッド70には、ウエハ３の周縁部に付着した処理液に向けて空気や不活性ガスなどの処理液膜調整用ガスを噴射するための処理液膜調整部73とウエハ３に向けて空気や不活性ガスなどのガスを噴出するための第４のガス噴出部74とを隣り合わせた状態で設けており、処理ヘッド70の中央部に処理液膜調整部73を形成するとともに、処理液膜調整部73よりもウエハ３の周縁部に対して内側に第４のガス噴出部74を形成している。ここで、処理液膜調整部73及び第４のガス噴出部74は、それぞれ所定の上下幅を有してウエハ３を挿通可能な形状に形成しており、第４のガス噴出部74のウエハ３と対向する上下幅を処理液膜調整部73のウエハ３と対向する上下幅よりも狭くして、処理液膜調整部73と第４のガス噴出部74との間に上下幅が直角状に変化するエッジ部75を形成している。   Further, the processing head 70 is directed to the processing liquid film adjusting unit 73 for injecting a processing liquid film adjusting gas such as air or an inert gas toward the processing liquid adhering to the peripheral edge of the wafer 3 and the wafer 3. And a fourth gas jetting part 74 for jetting a gas such as air or an inert gas are provided adjacent to each other, and a processing liquid film adjusting part 73 is formed at the center of the processing head 70 and the processing is performed. A fourth gas ejection portion 74 is formed on the inner side of the peripheral portion of the wafer 3 than the liquid film adjusting portion 73. Here, each of the processing liquid film adjusting unit 73 and the fourth gas jetting part 74 has a predetermined vertical width and is formed in a shape that allows the wafer 3 to be inserted, and the wafer of the fourth gas jetting part 74 is formed. 3 is narrower than the vertical width of the processing liquid film adjusting unit 73 facing the wafer 3, and the vertical width between the processing liquid film adjusting unit 73 and the fourth gas ejection unit 74 is a right angle. The edge part 75 which changes to is formed.

処理液膜調整部73は、処理ヘッド70の平面視中央部に処理ヘッド70の進退方向（ウエハ３の半径方向）へ向けて伸延させるとともにスリット72（第４のガス噴出部74）に連通させた処理液膜調整室76を形成し、この処理液膜調整室76の上下幅をスリット72よりも広い上下幅に形成している。処理液膜調整室76の上部には、処理液膜調整用ガスを噴射するためのガス噴射口77をウエハ３の周縁部に対して内側から外側に向けて傾斜させた状態で形成し、処理液膜調整室76の後部には、処理液膜調整用ガスを排出するためのガス排出口78を形成している。   The processing liquid film adjusting unit 73 extends in the central portion of the processing head 70 in a plan view in the forward / backward direction (radial direction of the wafer 3) of the processing head 70 and communicates with the slit 72 (fourth gas ejection unit 74). The processing liquid film adjusting chamber 76 is formed, and the vertical width of the processing liquid film adjusting chamber 76 is formed wider than the slit 72. A gas injection port 77 for injecting a processing liquid film adjusting gas is formed in the upper portion of the processing liquid film adjusting chamber 76 in a state inclined from the inner side to the outer side with respect to the peripheral edge of the wafer 3. In the rear part of the liquid film adjusting chamber 76, a gas discharge port 78 for discharging the processing liquid film adjusting gas is formed.

また、処理液膜調整部73は、ガス噴射口77にガス供給源79を開閉バルブ80を介して連通連結する一方、ガス排出口78に吸引機81を連通連結している。   Further, the processing liquid film adjusting unit 73 has a gas supply source 79 connected to the gas injection port 77 through an opening / closing valve 80 and a suction device 81 connected to the gas discharge port 78.

そして、処理液膜調整部73は、ガス供給源79から供給される処理液膜調整用ガスを処理液膜調整室76のガス噴射口77から噴射するとともに、吸引機81によって処理液膜調整用ガスを処理液膜調整室76から排出するようにしており、ガス噴射口77からウエハ３の周縁部の内側から外側に向けて処理液膜調整用ガスを噴射することで、処理液供給部16からウエハ３の周縁部に供給された処理液の一部をウエハ３の周縁部から外方へ吹き飛ばし、ウエハ３の周縁部の処理液の膜形状を均一な厚み（たとえば、ウエハ３の回転を停止した状態でっも液膜を形成する厚み）の膜状に調整するようにしている。   Then, the processing liquid film adjustment unit 73 injects the processing liquid film adjustment gas supplied from the gas supply source 79 from the gas injection port 77 of the processing liquid film adjustment chamber 76 and uses the suction device 81 to adjust the processing liquid film adjustment. The gas is discharged from the processing liquid film adjusting chamber 76, and the processing liquid film adjusting gas is injected from the gas injection port 77 toward the outside from the inner side to the outer side of the peripheral edge of the wafer 3, so that the processing liquid supply unit 16 is discharged. A part of the processing liquid supplied to the peripheral edge of the wafer 3 from the peripheral edge of the wafer 3 is blown outward from the peripheral edge of the wafer 3, so that the film shape of the processing liquid on the peripheral edge of the wafer 3 is uniform (for example, the rotation of the wafer 3 is reduced). In the stopped state, the thickness of the liquid film is adjusted.

一方、第４のガス噴出部74は、処理液膜調整室76よりも狭い上下幅のスリット72にガスを噴出するガス噴射口82と噴出したガスを吸引するガス吸引口83とを交互に格子点上に上下にそれぞれ形成し、ガス噴射口82にガス供給源84を圧力制御弁85を介して連通連結するとともに、ガス吸引口83に吸引機86を圧力制御弁87を介して連通連結している。   On the other hand, the fourth gas ejection part 74 has a lattice of gas ejection ports 82 for ejecting gas and gas suction ports 83 for sucking the ejected gas alternately into slits 72 having a narrower vertical width than the processing liquid film adjusting chamber 76. The gas supply source 84 is connected to the gas injection port 82 via the pressure control valve 85, and the suction device 86 is connected to the gas suction port 83 via the pressure control valve 87. ing.

そして、第４のガス噴出部74は、ガス供給源84から供給されるガスをガス噴射口82からウエハ３の表面（上面及び下面）に向けて噴出するとともに、噴出したガスを吸引機86によってガス吸引口83から外部に排出し、これにより、ウエハ３の周縁部近傍の反りを強制的に矯正するとともに、処理液膜調整室76の所定位置（ここでは、スリット72の中央）にウエハ３を位置させて処理液膜調整用ガスによる調整処理が良好に行えるようにしている。   The fourth gas ejection unit 74 ejects the gas supplied from the gas supply source 84 from the gas injection port 82 toward the surface (upper surface and lower surface) of the wafer 3, and the ejected gas is sucked by the suction device 86. The gas is discharged from the gas suction port 83 to the outside, thereby forcibly correcting the warpage in the vicinity of the peripheral edge of the wafer 3 and at the predetermined position of the processing liquid film adjustment chamber 76 (here, the center of the slit 72). Is positioned so that the adjustment process using the process liquid film adjustment gas can be performed satisfactorily.

基板処理装置１は、以上に説明したように構成している。なお、上記基板処理装置１では、図１に示すように、周縁処理機構７の第１の周縁処理装置８と第２の周縁処理装置９と薬液処理装置10と処理液膜調整装置11をウエハ３の半径方向に分離してウエハ３の回転中心に向けて進退可能に配設しているが、これに限られず、たとえば、図13に示す基板処理装置1'のように、周縁処理機構７の第１の周縁処理装置８と第２の周縁処理装置９と薬液処理装置10と処理液膜調整装置11を隣接させて配設してもよい。周縁処理機構７の第１の周縁処理装置８と第２の周縁処理装置９と薬液処理装置10と処理液膜調整装置11をウエハ３の回転中心に向けて進退可能に配設した場合には、各装置8〜11をウエハ３の周縁部において位置精度良く進退移動させることができ、ウエハ３の周縁部の所定範囲を位置精度良く処理することができる。また、周縁処理機構７の第１の周縁処理装置８と第２の周縁処理装置９と薬液処理装置10と処理液膜調整装置11を隣接させて配設した場合には、周縁処理機構７をコンパクト化することができ、基板処理装置1'の小型化を図ることができる。   The substrate processing apparatus 1 is configured as described above. In the substrate processing apparatus 1, as shown in FIG. 1, the first peripheral processing apparatus 8, the second peripheral processing apparatus 9, the chemical processing apparatus 10, and the processing liquid film adjusting apparatus 11 of the peripheral processing mechanism 7 are attached to the wafer. 3 is arranged so as to be movable back and forth toward the center of rotation of the wafer 3, but is not limited to this. For example, a peripheral processing mechanism 7 like a substrate processing apparatus 1 'shown in FIG. The first peripheral processing device 8, the second peripheral processing device 9, the chemical processing device 10, and the processing liquid film adjusting device 11 may be disposed adjacent to each other. When the first peripheral processing device 8, the second peripheral processing device 9, the chemical solution processing device 10, and the processing liquid film adjusting device 11 of the peripheral processing mechanism 7 are arranged so as to be able to advance and retract toward the rotation center of the wafer 3. Each of the devices 8 to 11 can be moved back and forth with high positional accuracy at the peripheral portion of the wafer 3, and a predetermined range of the peripheral portion of the wafer 3 can be processed with high positional accuracy. Further, when the first peripheral processing device 8, the second peripheral processing device 9, the chemical solution processing device 10, and the processing liquid film adjusting device 11 of the peripheral processing mechanism 7 are disposed adjacent to each other, the peripheral processing mechanism 7 is The substrate processing apparatus 1 ′ can be reduced in size.

また、上記基板処理装置１では、各装置8〜11の進退機構12,31,50,69によって処理ヘッド13,32,51,70を進退移動可能に構成しているが、本発明では、周縁処理機構７がウエハ３に対して相対的に進退移動できる構造となっていればよく、ウエハ３を処理ヘッド13,32,51,70に向けて進退移動可能に構成してもよい。   In the substrate processing apparatus 1, the processing heads 13, 32, 51, and 70 can be moved forward and backward by the advance / retreat mechanisms 12, 31, 50, and 69 of the respective devices 8 to 11. It suffices if the processing mechanism 7 has a structure capable of moving forward and backward relative to the wafer 3, and the wafer 3 may be configured to move forward and backward toward the processing heads 13, 32, 51, and 70.

また、上記基板処理装置１では、ケーシング14に処理液供給部16と第１のガス噴出部17とを一体的に形成した第１の周縁処理装置８と、ケーシング33にリンス液供給部35と第２のガス噴出部36とを一体的に形成した第２の周縁処理装置９とに分離して周縁処理機構７を構成しているが、図14〜図16に示す基板処理装置1"のように、処理液供給部16とガス噴出部17とリンス液供給部35とを一体的に形成した周縁処理装置88で周縁処理機構７を構成することもできる。   In the substrate processing apparatus 1, the first peripheral processing apparatus 8 in which the processing liquid supply unit 16 and the first gas ejection unit 17 are integrally formed in the casing 14, and the rinsing liquid supply unit 35 in the casing 33. The peripheral edge processing mechanism 7 is configured separately from the second peripheral edge processing apparatus 9 in which the second gas ejection part 36 is integrally formed. However, the substrate processing apparatus 1 "shown in FIGS. As described above, the peripheral processing mechanism 7 can be configured by the peripheral processing device 88 in which the processing liquid supply unit 16, the gas ejection unit 17, and the rinse liquid supply unit 35 are integrally formed.

この周縁処理装置88は、図14〜図16に示すように、矩形箱型状のケーシング89の先端部（前端部）にウエハ３の厚みよりも広い上下幅のスリット90をウエハ３と平行に水平状に形成するとともに、ケーシング89の中央部に処理液供給部やリンス液供給部として機能する液供給部91を形成するとともに、液供給部91よりもウエハ３の周縁部に対して内側にガス噴出部92を形成し、液供給部91とガス噴出部92との間に上下幅が直角状に変化するエッジ部93を形成している。ここで、液供給部91は、ケーシング89の平面視中央部にウエハ３の半径方向へ向けて伸延させるとともにスリット90に連通させた液貯留室94を形成し、この液貯留室94の上部に処理液供給口20とリンス液供給口39を形成し、液貯留室94の後部に排出口95を形成している。なお、液供給部16は、処理液供給口20に処理液供給源22を開閉バルブ23を介して連通連結するとともに、リンス液供給口39にリンス液供給源41を開閉バルブ42を介して連通連結する一方、排出口95に吸引機96を連通連結している。また、ガス噴出部92は、スリット90にガス噴射口25とガス吸引口26とを交互に格子点上に上下にそれぞれ形成し、ガス噴射口25にガス供給源27を圧力制御弁28を介して連通連結するとともに、ガス吸引口26に吸引機29を圧力制御弁30を介して連通連結している。   As shown in FIGS. 14 to 16, the peripheral edge processing device 88 has a slit 90 having a vertical width wider than the thickness of the wafer 3 at the front end (front end) of a rectangular box-shaped casing 89 in parallel with the wafer 3. A liquid supply part 91 that functions as a processing liquid supply part and a rinsing liquid supply part is formed in the central part of the casing 89 and is formed inward of the peripheral edge of the wafer 3 from the liquid supply part 91. A gas ejection part 92 is formed, and an edge part 93 whose vertical width changes in a right angle is formed between the liquid supply part 91 and the gas ejection part 92. Here, the liquid supply unit 91 forms a liquid storage chamber 94 that extends in the radial direction of the wafer 3 and communicates with the slit 90 in the central portion of the casing 89 in plan view, and is formed above the liquid storage chamber 94. A treatment liquid supply port 20 and a rinse liquid supply port 39 are formed, and a discharge port 95 is formed in the rear part of the liquid storage chamber 94. The liquid supply unit 16 connects the processing liquid supply source 22 to the processing liquid supply port 20 through the open / close valve 23, and communicates the rinse liquid supply source 41 to the rinse liquid supply port 39 through the open / close valve 42. On the other hand, a suction machine 96 is connected to the discharge port 95 in communication. Further, the gas ejection part 92 is formed by alternately forming the gas injection port 25 and the gas suction port 26 in the slit 90 above and below the lattice points, and the gas supply source 27 is connected to the gas injection port 25 via the pressure control valve 28. The suction device 29 is connected to the gas suction port 26 via the pressure control valve 30.

また、上記基板処理装置１では、処理液膜調整装置11にも第４のガス噴出部74を設けているが、これに限られず、図14に示す基板処理装置1"のように、ウエハ３の上方に周縁部の内側から外側に向けて傾斜状に配置したノズル97の下端部にガス噴射口98を形成した処理液膜調整部99を用いることもできる。   In the substrate processing apparatus 1, the processing gas film adjusting device 11 is also provided with the fourth gas ejection portion 74. However, the present invention is not limited to this, and the wafer 3 is not limited to this. It is also possible to use a processing liquid film adjusting unit 99 in which a gas injection port 98 is formed at the lower end portion of the nozzle 97 which is disposed in an inclined manner from the inner side to the outer side of the peripheral edge.

次に、上記基板処理装置１を用いてウエハ３の周縁部を処理する基板処理方法について説明する。   Next, a substrate processing method for processing the peripheral portion of the wafer 3 using the substrate processing apparatus 1 will be described.

まず、基板処理装置１は、基板保持機構６の上部の所定位置にウエハ３を載置し、基板保持機構６でウエハ３を吸引保持する。   First, the substrate processing apparatus 1 places the wafer 3 on a predetermined position above the substrate holding mechanism 6 and sucks and holds the wafer 3 by the substrate holding mechanism 6.

次に、基板処理装置１は、周縁処理機構７の第１の周縁処理装置８と処理液膜調整装置11の処理ヘッド13,70を進退機構12,69によってウエハ３に向けて所定位置まで前進させ、ウエハ３との間にわずかな間隙を形成した状態で各処理ヘッド13,70のスリット15,72にウエハ３を挿通させる。   Next, the substrate processing apparatus 1 advances the first peripheral processing apparatus 8 of the peripheral processing mechanism 7 and the processing heads 13 and 70 of the processing liquid film adjusting apparatus 11 to a predetermined position toward the wafer 3 by the advance / retreat mechanisms 12 and 69. The wafer 3 is inserted into the slits 15 and 72 of the processing heads 13 and 70 with a slight gap formed between the wafer 3 and the wafer 3.

次に、基板処理装置１は、基板保持機構６でウエハ３を平面視で反時計周りに低速回転させ、処理液供給部16の処理液貯留室19に処理液供給源22から処理液を供給するとともに、第１のガス噴出部17のガス噴射口25からガスを噴出し、ガス吸引口26からガスを吸引する。そして、基板処理装置１では、処理液供給部16よりもウエハ３の周縁部に対して内側に隣設した第１のガス噴出部17によってウエハ３の表面に向けてガスを噴出することで、噴出するガスの圧力でウエハ３の周縁部近傍を押圧して、ウエハ３とスリット15との間隙を確保しながらウエハ３の周縁部近傍の反りを矯正し、ウエハ３の周縁部を平坦な状態にして処理液貯留室19にウエハ３を浸漬することでウエハ３の周縁部の所定範囲を精度良く処理できるようにしている。   Next, the substrate processing apparatus 1 rotates the wafer 3 at a low speed counterclockwise in a plan view by the substrate holding mechanism 6 and supplies the processing liquid from the processing liquid supply source 22 to the processing liquid storage chamber 19 of the processing liquid supply unit 16. At the same time, gas is ejected from the gas ejection port 25 of the first gas ejection part 17 and gas is sucked from the gas suction port 26. Then, in the substrate processing apparatus 1, gas is ejected toward the surface of the wafer 3 by the first gas ejection unit 17 that is adjacent to the periphery of the wafer 3 from the processing liquid supply unit 16 inside. The vicinity of the peripheral edge of the wafer 3 is pressed by the pressure of the gas to be jetted, and the warpage in the vicinity of the peripheral edge of the wafer 3 is corrected while ensuring the gap between the wafer 3 and the slit 15. Thus, by immersing the wafer 3 in the processing liquid storage chamber 19, the predetermined range of the peripheral edge of the wafer 3 can be processed with high accuracy.

このときに、図５に示すように、処理液は、処理液供給部16において、処理液供給口20から供給され、処理液貯留室19に一時的に貯留し、処理液排出口21からオーバーフローして排出される。ここで、処理液貯留室19に供給された処理液は、第１の周縁処理装置８とウエハ３との相対的な回転により作用する遠心力や処理液供給部16よりも第１のガス噴出部17の上下幅が狭いことにより作用する表面張力によって、第１のガス噴出部17への浸入がエッジ部18で阻害され、処理液貯留室19に一時的に貯留することになる。これにより、基板処理装置１では、処理液貯留室19に貯留した処理液にウエハ３の周縁部が浸漬し、ウエハ３の周縁部の所定範囲（エッジ部18よりも外側の範囲）だけを処理液で精度よく処理することができる。   At this time, as shown in FIG. 5, the processing liquid is supplied from the processing liquid supply port 20 in the processing liquid supply unit 16, temporarily stored in the processing liquid storage chamber 19, and overflowed from the processing liquid discharge port 21. Then discharged. Here, the processing liquid supplied to the processing liquid storage chamber 19 is ejected by the first gas from the centrifugal force acting by the relative rotation of the first peripheral processing apparatus 8 and the wafer 3 or from the processing liquid supply unit 16. Due to the surface tension acting due to the narrow vertical width of the part 17, the intrusion into the first gas ejection part 17 is hindered by the edge part 18 and temporarily stored in the processing liquid storage chamber 19. As a result, in the substrate processing apparatus 1, the peripheral portion of the wafer 3 is immersed in the processing liquid stored in the processing liquid storage chamber 19, and only the predetermined range (the range outside the edge portion 18) of the peripheral portion of the wafer 3 is processed. It can be processed accurately with liquid.

また、基板処理装置１では、処理液供給部16よりもウエハ３の周縁部に対して内側に第１のガス噴出部17を隣設しているために、ガス噴射口25から噴出されるガスの圧力によって処理液貯留室19に貯留した処理液がウエハ３の内側に向けて流れ出るのを防止する効果も奏する。また、上下幅の異なる処理液貯留室19とスリット15との境界部分に形成されたエッジ部18に処理液とガスとの境界が形成されるために、基板処理装置１では、進退機構12で処理ヘッド13を進出又は後退させることで、処理液で処理するウエハ３の周縁部の範囲を調節することができるようにしている。なお、基板処理装置１では、処理液供給部16の表面を親水性素材で形成して処理液供給部16に処理液を満たしやすくする一方、第１のガス噴出部17を撥水性素材で形成して処理液供給部16から処理液が第１のガス噴出部17に流れ出るのを阻害している。   Further, in the substrate processing apparatus 1, since the first gas ejection part 17 is provided adjacent to the peripheral edge of the wafer 3 with respect to the processing liquid supply part 16, the gas ejected from the gas ejection port 25. This also has the effect of preventing the processing liquid stored in the processing liquid storage chamber 19 from flowing out toward the inside of the wafer 3 due to the pressure of. In addition, since the boundary between the processing liquid and the gas is formed at the edge portion 18 formed at the boundary between the processing liquid storage chamber 19 and the slit 15 having different vertical widths, the substrate processing apparatus 1 uses the advance / retreat mechanism 12. By moving the processing head 13 forward or backward, the range of the peripheral portion of the wafer 3 to be processed with the processing liquid can be adjusted. In the substrate processing apparatus 1, the surface of the processing liquid supply unit 16 is formed of a hydrophilic material so that the processing liquid supply unit 16 can be easily filled with the processing liquid, while the first gas ejection unit 17 is formed of a water repellent material. Thus, the processing liquid is prevented from flowing out from the processing liquid supply section 16 to the first gas ejection section 17.

さらに、基板処理装置１は、処理液膜調整部73の処理液膜調整室76にガス供給源79から処理液膜調整用ガスをウエハ３の周縁部に供給するとともに、第４のガス噴出部74のガス噴射口82からガスを噴出し、ガス吸引口83からガスを吸引する。   Further, the substrate processing apparatus 1 supplies the processing liquid film adjusting gas from the gas supply source 79 to the processing liquid film adjusting chamber 76 of the processing liquid film adjusting unit 73 to the peripheral portion of the wafer 3, and the fourth gas ejection unit. Gas is ejected from the 74 gas injection ports 82 and gas is sucked from the gas suction ports 83.

このときに、処理液膜調整装置11は、第１の周縁処理装置8の処理液供給部16からウエハ３の周縁部に供給した処理液を処理液膜調整部73のガス噴射口77から噴射した処理液膜調整用ガスで分散させて処理液を均一な厚みの膜状に調整する。これにより、基板処理装置１では、均一な膜厚の膜状の処理液によってウエハ３の周縁部を均一に処理することができる。なお、処理液の液膜は、ウエハ３の回転を停止した状態でも処理液の液膜がくずれない厚みに調整する。   At this time, the processing liquid film adjustment device 11 injects the processing liquid supplied from the processing liquid supply unit 16 of the first peripheral processing device 8 to the peripheral portion of the wafer 3 from the gas injection port 77 of the processing liquid film adjustment unit 73. The treatment liquid is dispersed with the treatment liquid film adjusting gas to adjust the treatment liquid into a film having a uniform thickness. Thereby, in the substrate processing apparatus 1, the peripheral part of the wafer 3 can be uniformly processed with the film-shaped processing liquid having a uniform film thickness. The liquid film of the processing liquid is adjusted to a thickness that does not break the liquid film of the processing liquid even when the rotation of the wafer 3 is stopped.

また、上述した処理液での処理と同様に、処理液膜調整装置11でも、第４のガス噴出部74から噴出されるガスの作用でウエハ３の周縁部の所定範囲に精度良く処理液膜調整用ガスを供給することができる。   Further, similarly to the processing with the processing liquid described above, the processing liquid film adjusting apparatus 11 also accurately treats the processing liquid film within a predetermined range of the peripheral portion of the wafer 3 by the action of the gas ejected from the fourth gas ejection section 74. Adjustment gas can be supplied.

次に、基板処理装置１は、第１の周縁処理装置８と処理液膜調整装置11の吸引機24,81で処理液貯留室19や処理液膜調整室76に残留した処理液や処理液膜調整用ガスを強制的に排出し、開閉バルブ23,80を閉じて処理液や処理液膜調整用ガスの供給を停止し、第１の周縁処理装置８と処理液膜調整装置11の処理ヘッド13,70を進退機構12,69によって所定位置まで後退させる。   Next, the substrate processing apparatus 1 uses the first peripheral processing apparatus 8 and the suction devices 24 and 81 of the processing liquid film adjustment apparatus 11 to leave the processing liquid and the processing liquid remaining in the processing liquid storage chamber 19 and the processing liquid film adjustment chamber 76. The film adjusting gas is forcibly discharged, the on-off valves 23 and 80 are closed, the supply of the processing liquid and the processing liquid film adjusting gas is stopped, and the processing of the first peripheral processing device 8 and the processing liquid film adjusting device 11 is performed. The heads 13 and 70 are retracted to a predetermined position by the advance / retreat mechanisms 12 and 69.

次に、基板処理装置１は、周縁処理機構７の第２の周縁処理装置９と薬液処理装置10の処理ヘッド32,51を進退機構31,50によってウエハ３に向けて所定位置まで前進させ、ウエハ３との間にわずかな間隙を形成した状態で各処理ヘッド32,51のスリット34,53にウエハ３を挿通させる。  Next, the substrate processing apparatus 1 advances the second peripheral processing apparatus 9 of the peripheral processing mechanism 7 and the processing heads 32 and 51 of the chemical processing apparatus 10 to a predetermined position toward the wafer 3 by the advance / retreat mechanisms 31 and 50, The wafer 3 is inserted through the slits 34 and 53 of the processing heads 32 and 51 with a slight gap formed between the wafer 3 and the wafer 3.

次に、基板処理装置１は、基板保持機構６でウエハ３を平面視で時計周りに低速回転させ、リンス液供給部35のリンス液貯留室38にリンス液供給源41からリンス液としての純水を供給するとともに、第２のガス噴出部36のガス噴射口44からガスを噴出し、ガス吸引口45からガスを吸引する。これにより、上述した処理液での処理と同様に、リンス液でウエハ３の周縁部の所定範囲をリンス処理することができる。また、このときも、上述した処理液での処理と同様に、第２のガス噴出部36から噴出されるガスの作用でウエハ３の周縁部の所定範囲を精度良くリンス処理することができる。   Next, the substrate processing apparatus 1 rotates the wafer 3 at a low speed clockwise in a plan view by the substrate holding mechanism 6, and enters the rinse liquid storage chamber 38 of the rinse liquid supply unit 35 from the rinse liquid supply source 41 as a pure rinse liquid. While supplying water, gas is ejected from the gas injection port 44 of the second gas ejection unit 36, and gas is sucked from the gas suction port 45. Thereby, similarly to the process with the process liquid mentioned above, the predetermined range of the peripheral part of the wafer 3 can be rinsed with the rinse liquid. Also at this time, similarly to the processing with the processing liquid described above, the predetermined range of the peripheral portion of the wafer 3 can be rinsed with high accuracy by the action of the gas ejected from the second gas ejection portion 36.

上記基板処理装置１では、リンス液貯留室38の先端部(前端部)を処理液貯留室19の先端部(前端部)よりもウエハ３の周端部に対して内側に形成することで、先に処理液供給部16からウエハ３の周縁部に供給された処理液よりもウエハ３の周縁部に対して内側にリンス液供給部35からリンス液を供給するようにしている。   In the substrate processing apparatus 1, the front end portion (front end portion) of the rinse liquid storage chamber 38 is formed on the inner side with respect to the peripheral end portion of the wafer 3 than the front end portion (front end portion) of the processing liquid storage chamber 19. The rinsing liquid is supplied from the rinsing liquid supply section 35 to the inside of the peripheral edge of the wafer 3 with respect to the processing liquid previously supplied to the peripheral edge of the wafer 3 from the processing liquid supply section 16.

そのため、上記基板処理装置１では、ウエハ３の周縁部に供給された全ての処理液をリンス液でリンス処理することができ、処理液の残留を防止して、ウエハ３の周縁部を良好に処理することができる。   For this reason, in the substrate processing apparatus 1, all the processing liquid supplied to the peripheral portion of the wafer 3 can be rinsed with the rinsing liquid, so that the remaining processing liquid can be prevented and the peripheral portion of the wafer 3 can be improved. Can be processed.

また、上記基板処理装置１では、薬液供給部54の薬液貯留室57に薬液供給源60から乾燥促進剤として機能するイソプロピルアルコールを供給するとともに、第３のガス噴出部55のガス噴射口63からガスを噴出し、ガス吸引口64からガスを吸引している。   In the substrate processing apparatus 1, isopropyl alcohol that functions as a drying accelerator is supplied from the chemical solution supply source 60 to the chemical solution storage chamber 57 of the chemical solution supply unit 54, and from the gas injection port 63 of the third gas injection unit 55. Gas is ejected and gas is sucked from the gas suction port 64.

そのため、上記基板処理装置１では、リンス処理後のウエハ３の周縁部をイソプロピルアルコールの揮発作用で乾燥を促進させることができ、乾燥処理に要する処理時間を短縮して、基板処理装置１のスループットを向上させることができる。   Therefore, in the substrate processing apparatus 1, the peripheral portion of the wafer 3 after the rinsing process can be accelerated by the volatile action of isopropyl alcohol, the processing time required for the drying process is shortened, and the throughput of the substrate processing apparatus 1 is reduced. Can be improved.

また、上述した処理液での処理と同様に、薬液処理装置10でも、第３のガス噴出部55から噴出されるガスの作用でウエハ３の周縁部の所定範囲に精度良く薬液（ここでは、イソプロピルアルコール）を供給することができる。   Similarly to the processing with the processing liquid described above, in the chemical processing apparatus 10, the chemical liquid (here, in the predetermined range in the peripheral portion of the wafer 3 by the action of the gas ejected from the third gas ejection section 55 is used. Isopropyl alcohol) can be supplied.

次に、基板処理装置１は、第２の周縁処理装置９と薬液処理装置10の吸引機43,62でリンス液貯留室38や薬液貯留室57に残留したリンス液や薬液を強制的に排出し、開閉バルブ42,61を閉じてリンス液や薬液の供給を停止し、基板保持機構６の回転を停止し、第２の周縁処理装置９と薬液処理装置10の処理ヘッド32,51を進退機構31,50によって所定位置まで後退させる。なお、基板保持機構６の回転を停止せずに、第２の周縁処理装置９と薬液処理装置10の処理ヘッド32,51を後退させ、基板保持機構６によってウエハ３を高速で回転させて、ウエハ３の周縁部からリンス液や薬液を強制的に振り切ってウエハ３の周縁部を乾燥させてもよい。   Next, the substrate processing apparatus 1 forcibly discharges the rinsing liquid and the chemical liquid remaining in the rinsing liquid storage chamber 38 and the chemical liquid storage chamber 57 by the second peripheral processing apparatus 9 and the suction devices 43 and 62 of the chemical processing apparatus 10. Then, the on-off valves 42 and 61 are closed to stop the supply of the rinsing liquid and the chemical liquid, the rotation of the substrate holding mechanism 6 is stopped, and the processing heads 32 and 51 of the second peripheral processing apparatus 9 and the chemical processing apparatus 10 are moved forward and backward. The mechanism 31, 50 is moved backward to a predetermined position. Without stopping the rotation of the substrate holding mechanism 6, the processing heads 32 and 51 of the second peripheral processing apparatus 9 and the chemical processing apparatus 10 are moved backward, and the wafer 3 is rotated at a high speed by the substrate holding mechanism 6. The peripheral portion of the wafer 3 may be dried by forcibly shaking off the rinse liquid or the chemical solution from the peripheral portion of the wafer 3.

以上に説明したようにして、基板処理装置１を用いてウエハ３の周縁部を処理することができる。なお、上記説明では、基板処理装置１の基板保持機構６によってウエハ３を反時計回りと時計回りとに反転させて回転させているが、これに限られず、たとえば、図13に示した基板処理装置1'では、ウエハ３を反時計回りに回転させて周縁処理とリンス処理とを行うことができる。   As described above, the peripheral portion of the wafer 3 can be processed using the substrate processing apparatus 1. In the above description, the wafer 3 is rotated by being rotated counterclockwise and clockwise by the substrate holding mechanism 6 of the substrate processing apparatus 1, but the present invention is not limited to this. For example, the substrate processing shown in FIG. In the apparatus 1 ′, the peripheral edge process and the rinse process can be performed by rotating the wafer 3 counterclockwise.

また、図14〜図16に示した基板処理装置1"では、処理液供給口20から処理液を供給してウエハ３の周縁部を処理した後に、周縁処理装置88をウエハ３の中心部へ向けて移動させ、リンス液供給口39からリンス液を供給してウエハ３の周縁部の処理液が付着した部分よりもさらにウエハ３の内側からウエハ３の周縁部をリンス処理することができる。   Further, in the substrate processing apparatus 1 ″ shown in FIGS. 14 to 16, the processing liquid is supplied from the processing liquid supply port 20 to process the peripheral portion of the wafer 3, and then the peripheral processing device 88 is moved to the central portion of the wafer 3. The peripheral edge portion of the wafer 3 can be rinsed from the inside of the wafer 3 more than the portion of the peripheral edge portion of the wafer 3 to which the processing liquid adheres by supplying the rinse liquid from the rinse liquid supply port 39.

以上に説明したように、ウエハ３の周縁部に対してエッチング又は洗浄などの処理を行う上記基板処理装置１では、ウエハ３の周縁部を処理するための周縁処理機構７と、周縁処理機構７に対して相対的に回転するウエハ３を保持するための基板保持機構６とを設けるとともに、周縁処理機構７に、ウエハ３の周縁部に処理液を供給する処理液供給部16と、ウエハ３に向けてガスを噴出する第１のガス噴出部17と、ウエハ３の周縁部にリンス液を供給するリンス液供給部35を形成し、しかも、第１のガス噴出部17を処理液供給部16よりもウエハ３の周縁部に対して内側に隣設した構成としている。   As described above, in the substrate processing apparatus 1 that performs processing such as etching or cleaning on the peripheral portion of the wafer 3, the peripheral processing mechanism 7 for processing the peripheral portion of the wafer 3, and the peripheral processing mechanism 7. A substrate holding mechanism 6 for holding the wafer 3 rotating relative to the wafer 3, a processing liquid supply unit 16 for supplying a processing liquid to the peripheral edge of the wafer 3 to the peripheral processing mechanism 7, and the wafer 3. A first gas ejection portion 17 for ejecting gas toward the periphery, and a rinsing liquid supply portion 35 for supplying a rinsing liquid to the peripheral edge of the wafer 3, and the first gas ejection portion 17 is used as a processing liquid supply portion. It is configured to be adjacent to the inner periphery of the peripheral edge of the wafer 3 rather than 16.

そして、上記構成の基板処理装置１では、周縁処理機構７をウエハ３に対して相対的に回転させ、処理液供給部16からウエハ３の周縁部に処理液を供給するとともに、処理液供給部16よりもウエハ３の内側に隣設した第１のガス噴出部17からウエハ３に向けてガスを噴出して、ウエハ３の周縁部の処理を行い、その後、ウエハ３の周縁部にリンス液供給部35からリンス液を供給して、ウエハ３の周縁部をリンス処理するようにしている。   In the substrate processing apparatus 1 configured as described above, the peripheral processing mechanism 7 is rotated relative to the wafer 3 so that the processing liquid is supplied from the processing liquid supply unit 16 to the peripheral portion of the wafer 3 and the processing liquid supply unit. A gas is ejected toward the wafer 3 from a first gas ejection portion 17 provided adjacent to the inside of the wafer 3 with respect to the wafer 3 to perform processing on the peripheral portion of the wafer 3, and then a rinse liquid is applied to the peripheral portion of the wafer 3. A rinsing liquid is supplied from the supply unit 35 to rinse the peripheral edge of the wafer 3.

そのため、上記構成の基板処理装置１では、処理液供給部16よりもウエハ３の内側に隣設した第１のガス噴出部17から噴出するガスによって、ウエハ３の反りを矯正してウエハ３の周縁部近傍を平坦に位置精度良く保持することができ、これによって、ウエハ３の周縁部の所定範囲を精度良く処理することができる。   Therefore, in the substrate processing apparatus 1 configured as described above, the warp of the wafer 3 is corrected by the gas ejected from the first gas ejection unit 17 adjacent to the inside of the wafer 3 relative to the processing liquid supply unit 16. The vicinity of the peripheral edge can be held flat and with high positional accuracy, whereby a predetermined range of the peripheral edge of the wafer 3 can be processed with high accuracy.

特に、上記構成の基板処理装置１では、第２のガス噴出部36をリンス液供給部35よりもウエハ３の周縁部に対して内側に隣設した場合には、第２のガス噴出部36から噴出するガスによって、ウエハ３の反りを矯正してウエハ３の周縁部近傍を平坦に位置精度良く保持することができ、これによって、ウエハ３の周縁部の所定範囲を精度良くリンス処理することができる。   In particular, in the substrate processing apparatus 1 having the above-described configuration, when the second gas ejection part 36 is provided on the inner side with respect to the peripheral edge of the wafer 3 with respect to the rinse liquid supply part 35, the second gas ejection part 36. It is possible to correct the warpage of the wafer 3 and to hold the vicinity of the peripheral portion of the wafer 3 flatly and with high positional accuracy by the gas ejected from the wafer, thereby rinsing the predetermined range of the peripheral portion of the wafer 3 with high accuracy. Can do.

また、上記構成の基板処理装置１では、処理液供給部16からウエハ３の周縁部に供給された処理液よりもウエハ３の周縁部に対して内側にリンス液供給部35からリンス液を供給するようにしているため、ウエハ３の周縁部に供給された全ての処理液をリンス液でリンス処理することができ、処理液の残留を防止して、ウエハ３の周縁部を良好に処理することができる。   Further, in the substrate processing apparatus 1 configured as described above, the rinsing liquid is supplied from the rinsing liquid supply unit 35 to the inside of the peripheral edge of the wafer 3 with respect to the processing liquid supplied from the processing liquid supply unit 16 to the peripheral edge of the wafer 3. Therefore, all the processing liquid supplied to the peripheral edge of the wafer 3 can be rinsed with the rinsing liquid, the processing liquid is prevented from remaining, and the peripheral edge of the wafer 3 is processed satisfactorily. be able to.

１ 基板処理装置
３ ウエハ
６ 基板保持機構
７ 周縁処理機構
15 スリット
16 処理液供給部
17 ガス噴出部
35 リンス液供給部 DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 3 Wafer 6 Substrate holding mechanism 7 Edge processing mechanism
15 slit
16 Treatment liquid supply unit
17 Gas outlet
35 Rinse solution supply unit

Claims (6)

基板の周縁部に対してエッチング又は洗浄などの処理を行う基板処理装置において、
基板の周縁部を処理するための周縁処理機構と、周縁処理機構に対して相対的に回転する基板を保持するための基板保持機構とを有し、
周縁処理機構は、
基板の周縁部に処理液を供給する処理液供給部と、
処理液供給部よりも基板の周縁部に対して内側に隣設し、基板に向けてガスを噴出するガス噴出部と、
基板の周縁部にリンス液を供給するリンス液供給部と、
を有し、
ガス噴出部は、基板を挿通させたスリットに形成したことを特徴とする基板処理装置。 In a substrate processing apparatus that performs processing such as etching or cleaning on the peripheral edge of a substrate,
A peripheral processing mechanism for processing the peripheral portion of the substrate, and a substrate holding mechanism for holding the substrate that rotates relative to the peripheral processing mechanism,
The peripheral processing mechanism is
A processing liquid supply unit for supplying a processing liquid to the peripheral edge of the substrate;
A gas ejection part that is adjacent to the inner side of the peripheral edge of the substrate than the processing liquid supply part, and ejects gas toward the substrate;
A rinsing liquid supply section for supplying a rinsing liquid to the peripheral edge of the substrate;
Have
The substrate processing apparatus, wherein the gas ejection part is formed in a slit through which the substrate is inserted. 前記ガス噴出部は、前記スリットの前記基板を挟んで反対側にそれぞれ形成したことを特徴とする請求項１に記載の基板処理装置。   The substrate processing apparatus according to claim 1, wherein the gas ejection portions are formed on opposite sides of the substrate with respect to the slit. 前記スリットに、ガスを噴出するガス噴出口と噴出したガスを吸引するガス吸引口とを交互に格子点上に形成したことを特徴とする請求項１又は請求項２に記載の基板処理装置。   3. The substrate processing apparatus according to claim 1, wherein gas slits for ejecting gas and gas suction ports for sucking the ejected gas are alternately formed on the lattice points in the slit. 前記スリットに、処理液供給部の処理液貯留室とリンス液供給部のリンス液貯留室を連通させたことを特徴とする請求項１〜請求項３のいずれかに記載の基板処理装置。   The substrate processing apparatus according to claim 1, wherein a processing liquid storage chamber of a processing liquid supply unit and a rinsing liquid storage chamber of a rinsing liquid supply unit are communicated with the slit. 前記処理液貯留室に処理液供給口を基板の端部よりも外側に形成し、前記リンス液貯留室にリンス液供給口を基板の端部よりも内側に形成したことを特徴とする請求項４に記載の基板処理装置。   The treatment liquid supply port is formed outside the end portion of the substrate in the treatment liquid storage chamber, and the rinse solution supply port is formed inside the end portion of the substrate in the rinse liquid storage chamber. 4. The substrate processing apparatus according to 4. 基板の周縁部に対してエッチング又は洗浄などの処理を行う基板処理方法において、
基板の周縁部に配設した周縁処理機構に対して基板を相対的に回転させ、周縁処理機構に形成した処理液供給部から基板の周縁部に処理液を供給するとともに、処理液供給部よりも基板の周縁部に対して内側に隣設するとともに基板を挿通させたスリットに形成したガス噴出部から基板に向けてガスを噴出して、基板の周縁部処理を行い、その後、周縁処理機構に形成したリンス液供給部から基板の周縁部にリンス液を供給して、基板の周縁部のリンス処理を行うことを特徴とする基板処理方法。 In the substrate processing method for performing processing such as etching or cleaning on the peripheral edge of the substrate,
The substrate is rotated relative to the peripheral processing mechanism disposed at the peripheral portion of the substrate, and the processing liquid is supplied from the processing liquid supply unit formed in the peripheral processing mechanism to the peripheral portion of the substrate. In addition, the gas is ejected toward the substrate from the gas ejection portion formed in the slit through which the substrate is inserted while being adjacent to the inner periphery of the substrate, and then the peripheral processing of the substrate is performed. A substrate processing method, wherein a rinsing liquid is supplied from a rinsing liquid supply unit formed on the peripheral edge of the substrate to perform a rinsing process on the peripheral edge of the substrate.
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