JP2012064977A - Ｉｉｉ族窒化物半導体積層ウェハ及びｉｉｉ族窒化物半導体デバイス - Google Patents

Ｉｉｉ族窒化物半導体積層ウェハ及びｉｉｉ族窒化物半導体デバイス Download PDF

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Publication number
JP2012064977A
JP2012064977A JP2011274672A JP2011274672A JP2012064977A JP 2012064977 A JP2012064977 A JP 2012064977A JP 2011274672 A JP2011274672 A JP 2011274672A JP 2011274672 A JP2011274672 A JP 2011274672A JP 2012064977 A JP2012064977 A JP 2012064977A
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layer
group iii
iii nitride
nitride semiconductor
plane
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JP2011274672A
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Japanese (ja)
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JP2012064977A5 (enExample
Inventor
Makoto Hashimoto
信 橋本
Tatsuya Tanabe
達也 田辺
Katsushi Akita
勝史 秋田
Hideaki Nakahata
英章 中幡
Hiroshi Amano
浩 天野
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Priority to JP2011274672A priority Critical patent/JP2012064977A/ja
Publication of JP2012064977A publication Critical patent/JP2012064977A/ja
Publication of JP2012064977A5 publication Critical patent/JP2012064977A5/ja
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JP2011274672A 2011-12-15 2011-12-15 Ｉｉｉ族窒化物半導体積層ウェハ及びｉｉｉ族窒化物半導体デバイス Pending JP2012064977A (ja)

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JP2011274672A JP2012064977A (ja) 2011-12-15 2011-12-15 Ｉｉｉ族窒化物半導体積層ウェハ及びｉｉｉ族窒化物半導体デバイス

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JP2011274672A JP2012064977A (ja) 2011-12-15 2011-12-15 Ｉｉｉ族窒化物半導体積層ウェハ及びｉｉｉ族窒化物半導体デバイス

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JP2009198701A Division JP4888537B2 (ja) 2009-08-28 2009-08-28 Ｉｉｉ族窒化物半導体積層ウェハ及びｉｉｉ族窒化物半導体デバイス

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JP2012064977A true JP2012064977A (ja) 2012-03-29
JP2012064977A5 JP2012064977A5 (enExample) 2012-05-17

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017077734A1 (ja) * 2015-11-05 2017-05-11 シャープ株式会社 窒化物半導体、窒化物半導体の製造方法、および電子デバイス
WO2017077733A1 (ja) * 2015-11-05 2017-05-11 シャープ株式会社 窒化物半導体、窒化物半導体の製造方法、および電子デバイス
CN111587492A (zh) * 2017-12-28 2020-08-25 日机装株式会社 氮化物半导体元件和氮化物半导体元件的制造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005167275A (ja) * 2000-12-07 2005-06-23 Ngk Insulators Ltd 半導体素子
JP2006093400A (ja) * 2004-09-24 2006-04-06 Ngk Insulators Ltd 半導体積層構造およびｈｅｍｔ素子
JP2007067240A (ja) * 2005-08-31 2007-03-15 Toshiba Corp 窒化物系半導体装置
JP2007258230A (ja) * 2006-03-20 2007-10-04 Dowa Holdings Co Ltd 半導体基板及び半導体装置
JP2008243881A (ja) * 2007-03-26 2008-10-09 Mitsubishi Electric Corp 半導体装置及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005167275A (ja) * 2000-12-07 2005-06-23 Ngk Insulators Ltd 半導体素子
JP2006093400A (ja) * 2004-09-24 2006-04-06 Ngk Insulators Ltd 半導体積層構造およびｈｅｍｔ素子
JP2007067240A (ja) * 2005-08-31 2007-03-15 Toshiba Corp 窒化物系半導体装置
JP2007258230A (ja) * 2006-03-20 2007-10-04 Dowa Holdings Co Ltd 半導体基板及び半導体装置
JP2008243881A (ja) * 2007-03-26 2008-10-09 Mitsubishi Electric Corp 半導体装置及びその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017077734A1 (ja) * 2015-11-05 2017-05-11 シャープ株式会社 窒化物半導体、窒化物半導体の製造方法、および電子デバイス
WO2017077733A1 (ja) * 2015-11-05 2017-05-11 シャープ株式会社 窒化物半導体、窒化物半導体の製造方法、および電子デバイス
CN111587492A (zh) * 2017-12-28 2020-08-25 日机装株式会社 氮化物半导体元件和氮化物半导体元件的制造方法
CN111587492B (zh) * 2017-12-28 2023-06-13 日机装株式会社 氮化物半导体元件和氮化物半导体元件的制造方法

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