JP2012049470A - Semiconductor holding apparatus and semiconductor bonding apparatus equipped with the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor holding apparatus and a semiconductor bonding apparatus equipped with the same which can preferably perform bonding by efficiently creating a necessary environment of a low oxygen concentration when bonding a semiconductor element with a substrate.SOLUTION: The semiconductor holding apparatus B comprises a holding part 3 holding a semiconductor element 1, a hood 4 provided around the holding part 3 and having an inclined plane 4a gradually inclining inward as going down, and an ejection hole 6 ejecting an inert gas 5 toward the inclined plane 4a of the hood 4 reaching toward the inside of the holding part 3.

Description

  The present invention relates to a semiconductor holding device used when bonding a semiconductor to a substrate and a semiconductor bonding device including the same, and more particularly to a semiconductor holding device and a semiconductor bonding having a structure capable of efficiently supplying an environment having a low oxygen concentration necessary for bonding. Relates to the device.

  2. Description of the Related Art Conventionally, many semiconductor bonding apparatuses are configured to bond a semiconductor to a substrate while controlling a local inert gas flow.

  That is, in the semiconductor manufacturing process, a wafer that has completed a manufacturing process such as oxidative diffusion cleaning is divided into individual pieces. In the semiconductor bonding step, these semiconductor elements (semiconductor pieces, A semiconductor chip is mounted and fixed (mounted) on a substrate such as glass epoxy or ceramics. At this time, the substrate is configured in a matrix shape that can be obtained in large numbers, and an adhesive is applied in advance to a portion on which the semiconductor element is mounted, or soldering is performed on the connection wiring.

  Then, the semiconductor element is sucked and held by a bonding head (semiconductor holding device, collet) of the semiconductor bonding apparatus and is transported to a predetermined position of the substrate together with the bonding head. In this way, after the semiconductor element is transported together with the bonding head, the bonding head is lowered to come into contact with the substrate and heat treatment is performed. Thereby, the solder is melted, and the semiconductor element is bonded to a predetermined position of the substrate. In addition, the adsorbing state of the semiconductor element is released and the bonding head is raised to return to the initial position, and other semiconductor elements are similarly bonded onto the substrate.

  On the other hand, when a semiconductor element is bonded to a predetermined position on a substrate by a semiconductor bonding apparatus, the bonding is performed in a low oxygen concentration environment in order to prevent oxidation of solder for bonding the wiring of the semiconductor element and the wiring of the substrate. ing.

  And in the conventional semiconductor joining apparatus, it is comprised so that an inert gas may be blown out from the vent hole (blowing hole) provided in the collet, and while blowing an inert gas toward the semiconductor element (semiconductor piece) hold | maintained by adsorption | suction Joining is performed (for example, refer to Patent Document 1).

Japanese Patent Laid-Open No. 2004-111986

  However, in the conventional semiconductor bonding apparatus, it is impossible to spray an inert gas on the bonding portion of the semiconductor element, and there is a possibility that an environment having a low oxygen concentration cannot be created at the bonding portion. That is, since the inert gas is blown obliquely toward the side surface of the held semiconductor element, the flow of the inert gas is hindered, and there is a possibility that an environment having a low oxygen concentration cannot be created at the junction. It was.

  Further, as the size of the semiconductor element increases, an inert gas flow is not formed on the bonding surface of the semiconductor element. For this reason, there existed a problem that it cannot respond flexibly to a large-sized semiconductor element.

  Furthermore, since the heating structure and the inert gas blowing structure are built in the same collet, there is a problem in that it is necessary to prepare collets corresponding to the increase in size and thickness of the semiconductor element.

  In addition, since the suction hole for holding the semiconductor element and the vent hole for blowing out the inert gas are provided on the adsorption holding surface, the portion directly in contact with the collet when heated and joined However, there is a problem that a temperature difference occurs in a portion immediately below the intake hole and the vent hole, and heating efficiency is deteriorated.

  In view of the above circumstances, the present invention has a semiconductor holding device and a semiconductor holding device that can efficiently form a necessary low oxygen concentration environment when bonding a semiconductor element to a substrate and can perform bonding appropriately. Another object is to provide a semiconductor bonding apparatus.

  In order to achieve the above object, the present invention provides the following means.

  The semiconductor holding device of the present invention includes a holding portion that holds a semiconductor element, a hood that is provided around the holding portion and has an inclined surface that is gradually inclined toward the inside of the holding portion as it goes downward, and the hood A blowout hole for blowing out an inert gas toward the inclined surface facing the inside of the holding portion is formed.

  Further, in the semiconductor holding device of the present invention, the holding portion includes a flat portion that sucks the semiconductor element, and a digging portion that is provided so as to surround the flat portion and is recessed with respect to the flat portion. It is desirable that the blowout hole is provided in the digging portion.

  Furthermore, in the semiconductor holding device of the present invention, it is more desirable that the hood is formed such that the tip is positioned above the mounting surface of the semiconductor element in a state where the semiconductor element is sucked and held by the holding portion. .

  In the semiconductor holding device of the present invention, it is desirable that the hood is made of aluminum nitride, metal or resin.

  A semiconductor bonding apparatus according to the present invention is connected to any one of the semiconductor holding apparatuses described above, a substrate holding section that holds a substrate, a heater that heats a semiconductor element to be bonded to the substrate, and the blowing hole. An inert gas source and a control device that controls the inert gas source so as to eject the inert gas from the blowing hole during bonding are provided.

  In the semiconductor holding device of the present invention and the semiconductor bonding apparatus including the semiconductor holding device according to the present invention, the inert gas is blown out toward the inclined surface of the hood facing the inside of the holding portion without providing a blowing hole on the side surface of the semiconductor element as in the prior art. By providing the blowing holes as described above, the inert gas blown from the blowing holes can be guided by the hood and supplied to the junction portion of the semiconductor element.

  Thereby, it is possible to prevent the flow of the inert gas from being obstructed by the semiconductor element, and it is possible to reliably create a low oxygen concentration environment at the junction of the semiconductor element.

  In addition, since a hood is provided around the holding portion for holding the semiconductor element, it can flexibly cope with a large semiconductor element, and the semiconductor element and the substrate are prevented from being cooled with an inert gas. It becomes possible to increase the heating efficiency at the time.

1 is a cross-sectional view showing a semiconductor holding device (semiconductor bonding apparatus) according to an embodiment of the present invention. 1 is a top view showing a semiconductor holding device according to an embodiment of the present invention. It is sectional drawing which shows the flow of the inert gas in the semiconductor holding device which concerns on one Embodiment of this invention. It is a top view which shows the flow of the inert gas in the semiconductor holding device which concerns on one Embodiment of this invention. It is a figure which shows the oxygen concentration measurement result at the time of using the semiconductor holding | maintenance apparatus which concerns on one Embodiment of this invention. It is sectional drawing which shows the modification of the semiconductor holding device (semiconductor joining apparatus) which concerns on one Embodiment of this invention. It is sectional drawing which shows the modification of the semiconductor holding device (semiconductor joining apparatus) which concerns on one Embodiment of this invention. It is sectional drawing which shows the modification of the semiconductor holding device (semiconductor joining apparatus) which concerns on one Embodiment of this invention. It is sectional drawing which shows the modification of the semiconductor holding device (semiconductor joining apparatus) which concerns on one Embodiment of this invention. It is sectional drawing which shows the modification of the semiconductor holding device (semiconductor joining apparatus) which concerns on one Embodiment of this invention. It is sectional drawing which shows the modification of the semiconductor holding device (semiconductor joining apparatus) which concerns on one Embodiment of this invention.

  Hereinafter, a semiconductor holding device and a semiconductor bonding apparatus including the same according to an embodiment of the present invention will be described with reference to FIGS. 1 to 5. The present embodiment relates to a semiconductor holding device and a semiconductor bonding device used when bonding a semiconductor element to a substrate, and more particularly, to a semiconductor holding device having a structure capable of efficiently supplying a low oxygen concentration environment necessary for bonding. The present invention relates to a semiconductor bonding apparatus.

  As shown in FIGS. 1 and 2, the semiconductor bonding apparatus A of the present embodiment includes a semiconductor holding device B that holds a semiconductor element (semiconductor piece, semiconductor chip) 1 by suction, and a substrate holding unit that holds a substrate 2. And a heater for heating and bonding the semiconductor element 1 to the substrate 2, an inert gas source, and a control device for controlling the inert gas source.

  Further, the semiconductor holding device B is a collet with a hood that is attracted to or held by a mounting head (not shown) or is held by other methods, and a holding part 3 that holds the semiconductor element 1 by suction, and around the holding part 3 A hood (saddle, ridge structure) 4 that is provided and has an inclined surface 4a that gradually inclines inside the holding portion 3 as it goes downward, and an inert gas toward the inclined surface 4a of the hood 4 that faces the inside of the holding portion 3 5 and a blowout hole 6 for blowing out 5. Further, an inert gas source is connected to the blowing hole 6, and the inert gas source is controlled by the control device so that the inert gas 5 is jetted from the blowing hole 6 at the time of joining the semiconductor element 1 to the substrate 2. It is configured.

  The holding part 3 is provided with a flat part 8 having a vacuum hole (intake hole) 7 for attracting and fixing the semiconductor element 1 at the center thereof. Further, a digging portion 10 including a digging groove 9 that is recessed with respect to the flat portion 8 is formed around the flat portion 8. Then, in the outer peripheral side portion (digging portion 10) where the digging groove 9 is formed, an opening (penetration) is made from one surface 3a fixed to the mounting head (not shown) of the holding portion 3 to the other surface 3b of the digging groove 9. ) And the blowout hole 6 is formed. Moreover, in this embodiment, the heater is provided in the one surface 3a side (back side) of the holding | maintenance part 3 formed in this way.

  On the other hand, the hood 4 is formed of aluminum nitride, metal, or resin, and is inclined downward and gradually toward the inside of the holding portion 3 from the rear end connected to the outer peripheral edge of the holding portion 3 toward the tip. Is formed. The hood 4 is desirably formed so that the angle of intersection θ between the inclined surface 4a and the other surface 3b of the digging portion 10 is 40 to 50 °.

  Further, in the present embodiment, the hood 4 is formed so that the inclined surface 4 a extends directly below the blowing hole 6 and includes the other surface 3 b of the holding portion 3. Further, the hood 4 is formed such that the tip thereof is located above the mounting surface (joint portion 11) of the semiconductor element 1 in a state where the semiconductor element 1 is held by the flat part 8 of the holding part 3. .

  In the semiconductor holding device B and semiconductor bonding apparatus A of the present embodiment configured as described above, the semiconductor holding device B moves onto the semiconductor element 1 and the vacuum hole 7 is vacuumed, so that the semiconductor element 1 is flat. 8 is fixed by suction.

  Then, while the semiconductor holding device B moves to a predetermined position on the substrate 2, the semiconductor element 1 is lowered so as to be in contact with the substrate 2 (on the connection wiring provided with adhesive or solder applied to the substrate 2), The inert gas 5 is supplied to the blowing hole 6 from the inert gas source controlled by the control device, and the inert gas 5 is jetted from the blowing hole 6.

  At this time, in the semiconductor holding device B of the present embodiment, the hood 4 is provided on the outer peripheral side of the holding unit 3, and the blowing holes 6 are formed so that the inert gas 5 blows out toward the inclined surface 4 a of the hood 4. Is formed. For this reason, as shown in FIGS. 3 and 4, the ejected inert gas 5 hits the inclined surface 4 a of the hood 4, and is guided to the hood 4 through the digging groove 9 surrounded by the hood 4. The inert gas 5 flows between the substrate 2 and the substrate 2. As a result, as shown in the oxygen concentration measurement result of FIG. 5, the periphery of the junction 11 between the semiconductor element 1 and the substrate 2 is filled with the inert gas 5, and a uniform low oxygen concentration environment is formed over the entire area of the semiconductor element 1. Is done.

  And since the joining part 11 of the semiconductor element 1 becomes an environment having a low oxygen concentration, when the semiconductor element 1 is joined to the wiring of the substrate 2 by heating with the heater, the solder is surely prevented from being oxidized, and the joining is preferably performed. Will be done.

  Therefore, in the semiconductor holding device B of the present embodiment and the semiconductor bonding apparatus A including the same, the inclined surface 4a of the hood 4 facing the inside of the holding portion 3 without providing a blowing hole on the side surface of the semiconductor element as in the prior art. By providing the blowing hole 6 so that the inert gas 5 blows out toward the surface, the inert gas 5 blown out from the blowing hole 6 can be guided by the hood 4 and supplied to the junction 11 of the semiconductor element 1. Become.

  Thereby, it is possible to prevent the flow of the inert gas 5 from being obstructed by the semiconductor element 1, and it is possible to reliably create an environment having a low oxygen concentration at the junction 11 of the semiconductor element 1.

  In addition, since the hood 4 is provided around the holding portion 3 that holds the semiconductor element 1, the hood 4 can be flexibly adapted to the large-sized semiconductor element 1, and the semiconductor element 1 and the substrate 2 can be cooled with the inert gas 5. Therefore, it is possible to increase the heating efficiency during bonding.

  Furthermore, it was comprised so that the flow of the inert gas 5 was prevented by providing the blowing hole 6 so that the inert gas 5 might be blown out toward the inclined surface 4a of the food | hood 4 which faces the inner side of the holding | maintenance part 3. FIG. Thus, the inert gas 5 can be reliably filled in the bonding portion 11 of the semiconductor element 1 without being influenced by the size of the heating object. Further, by providing the heater on the back surface 3a side of the holding unit 3 (collet), the wiring for heating can be made unnecessary and can be easily detached.

  Further, the flow of the inert gas 5 can be made laminar by the hood 4 instead of making the flow of the inert gas 5 laminar on the upper surface of the object of the semiconductor element 1. For this reason, it is not necessary to provide a restriction on the large-sized semiconductor element 1 or the thin semiconductor element 1, and also from this point, it is possible to flexibly cope with the semiconductor elements 1 having different sizes.

  Furthermore, since only the vacuum hole (intake hole) 7 is provided in the flat part 8 (on the upper surface of the semiconductor element 1) for adsorbing and fixing the semiconductor element 1, it is possible to improve the maintainability.

  Therefore, according to the semiconductor holding device B of this embodiment and the semiconductor bonding apparatus A provided with the semiconductor holding device B, the structure of the semiconductor holding device B can be designed to be small, and the maintenance and product shape change can be easily handled. It becomes possible. In addition, it is possible to suitably perform bonding without providing any structure on the lower surface of the target substrate 2 to which the semiconductor element 1 is bonded, and by reliably creating a low oxygen concentration environment in the bonding portion 11 of the semiconductor element 1. It becomes possible.

  As mentioned above, although one embodiment of the semiconductor holding device according to the present invention and the semiconductor bonding apparatus including the same has been described, the present invention is not limited to the above-described embodiment, and may be changed as appropriate without departing from the scope of the present invention. Is possible.

  For example, in the present embodiment, as shown in FIG. 1, the blowing hole 6 is provided with a constant inner diameter in the vertical direction from the one surface 3 a of the holding portion 3 toward the other surface 3 b forming the blowing groove 9. It was supposed to be. On the other hand, the blowout hole 6 according to the present invention only needs to be able to eject the inert gas 5 toward the inclined surface 4 a of the hood 4, and the inert gas 5 collides with the inclined surface 4 a of the hood 4. It is possible to set arbitrarily within a possible range.

  That is, as shown in FIGS. 6 and 7, the outlet diameter of the inert gas 5 (the diameter of the outlet opening in the blowing groove 8) is made larger than that of the inert gas 5, or conversely, the outlet diameter is made smaller than the inlet diameter and blown out. A hole 6 may be formed. In this case, by appropriately setting the inlet diameter and the outlet diameter, the flow rate and flow rate of the inert gas 5 ejected from the blowout hole 6 can be adjusted, and the junction 11 of the semiconductor element 1 has a low oxygen concentration. It becomes possible to create an environment with certainty and to perform bonding appropriately.

  Further, as shown in FIG. 8, the blowing hole 6 may be formed so as to penetrate obliquely from the one surface 3 a to the other surface 3 b of the holding portion 3. In this case, the inert gas 5 hits the inclined surface 4a of the hood 4 from the blowout hole 6, so that the periphery of the semiconductor element 1 as well as the junction part 11 of the semiconductor element 1 is surely set in an environment having a low oxygen concentration. Is possible.

  Further, as shown in FIGS. 9, 10, and 11, between the outer surface 3 b of the outer peripheral side from the blowing hole 6 of the blowing portion 10 and the surface 4 a facing the holding portion 3 (flat portion 8) side of the hood 4. The gap H may be filled. In this case, the inert gas 5 ejected from the blowout hole 6 can be prevented from rotating in the gap H, and the attenuation of the flow velocity of the inert gas 5 on the inflow path can be suppressed. Become. For this reason, it is possible to shorten the time required to obtain a low oxygen concentration environment. Further, the ease of manufacture is improved, and the semiconductor holding device B can be manufactured at a low cost.

DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Board | substrate 3 Holding | maintenance part 3a One surface 3b Other surface 4 Hood 4a Inclined surface 5 Inert gas 6 Blow-off hole 7 Vacuum hole (intake hole)
8 flat portion 9 digging groove 10 digging portion 11 junction A semiconductor junction device B semiconductor holding device H gap

Claims (5)

  A holding portion for holding a semiconductor element; a hood provided around the holding portion; and a hood having an inclined surface gradually inclined toward the inside of the holding portion as it goes downward; and the inclination facing the inside of the holding portion of the hood A semiconductor holding device comprising a blowout hole for blowing an inert gas toward the surface. The semiconductor holding device according to claim 1,
The holding portion includes a flat portion that adsorbs a semiconductor element, and a digging portion that is provided so as to surround the flat portion and is recessed with respect to the flat portion,
The semiconductor holding device, wherein the blowing hole is provided to open to the digging portion. The semiconductor holding device according to claim 1 or 2,
The semiconductor hood is characterized in that the hood is formed so that the tip is positioned above the mounting surface of the semiconductor element in a state where the semiconductor element is sucked and held by the holding portion. The semiconductor holding device according to any one of claims 1 to 3,
A semiconductor holding device, wherein the hood is formed of aluminum nitride, metal or resin.   5. The semiconductor holding device according to claim 1, a substrate holding unit that holds a substrate, a heater that heats a semiconductor element and joins the substrate, and the blowout hole are connected to each other. A semiconductor bonding apparatus comprising: an inert gas source; and a control device that controls the inert gas source so that the inert gas is ejected from the blowing hole during bonding.

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