JPH10214864A - Bonding head with inert gas supply mechanism - Google Patents
Bonding head with inert gas supply mechanismInfo
- Publication number
- JPH10214864A JPH10214864A JP2837897A JP2837897A JPH10214864A JP H10214864 A JPH10214864 A JP H10214864A JP 2837897 A JP2837897 A JP 2837897A JP 2837897 A JP2837897 A JP 2837897A JP H10214864 A JPH10214864 A JP H10214864A
- Authority
- JP
- Japan
- Prior art keywords
- inert gas
- bonding head
- heating
- bonding
- gas supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/751—Means for controlling the bonding environment, e.g. valves, vacuum pumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75743—Suction holding means
- H01L2224/75745—Suction holding means in the upper part of the bonding apparatus, e.g. in the bonding head
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体チップを回
路基板に電気的に加熱して接合するボンディング装置に
おけるボンディングヘッドの改良に関するものであり、
詳しくは加熱接合される部分の酸化を防止する機構を有
するボンディングヘッドに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement of a bonding head in a bonding apparatus for bonding a semiconductor chip to a circuit board by heating the semiconductor chip electrically.
More specifically, the present invention relates to a bonding head having a mechanism for preventing oxidation of a portion to be heated and joined.
【０００２】[0002]
【従来の技術】従来より、半導体チップを回路基板上に
直接加熱して接合する方法の一例として半田による接合
がある。この接合では接合部の酸化による接合不良が発
生することが知られており、これを防止するため接合部
周辺を不活性ガスによりシールドする手段が採用されて
いる。2. Description of the Related Art Conventionally, soldering has been used as an example of a method of directly heating and bonding a semiconductor chip onto a circuit board. It is known that in this bonding, a bonding failure due to oxidation of the bonding part occurs, and in order to prevent this, means for shielding the periphery of the bonding part with an inert gas is employed.
【０００３】この従来から知られている不活性ガスによ
る接合部のシールドは、図５に示すようにボンディング
ヘッド１の外部に設けられたガス配管２を使用し、不活
性ガスを供給するものであり、効果的に不活性ガスによ
るシールドを行なうため基板４の周囲の基板ステージ５
上に基板４を囲む囲い壁３を形成して半密閉構造とする
ことも行なわれている。[0003] This conventionally known shield of a joint portion using an inert gas is such that an inert gas is supplied by using a gas pipe 2 provided outside a bonding head 1 as shown in FIG. A substrate stage 5 around the substrate 4 for effective shielding with an inert gas.
An enclosing wall 3 surrounding the substrate 4 is formed thereon to form a semi-closed structure.
【０００４】ここで外部の不活性ガス供給部６よりシー
ルドのための不活性ガスを供給する際、ボンディングヘ
ッド１は加熱接合のため一定温度を保たなければならな
いが、不活性ガスが供給されることにより加熱部の温度
が均一とならないという問題を引き起こしていた。そこ
でボンディングヘッド１の加熱部２０と同様なガス温度
コントローラ２４をガス配管２の途中に設けることが必
要であった。When an inert gas for shielding is supplied from an external inert gas supply unit 6, the bonding head 1 must be kept at a constant temperature for heating and joining, but the inert gas is supplied. This causes a problem that the temperature of the heating unit is not uniform. Therefore, it is necessary to provide a gas temperature controller 24 similar to the heating section 20 of the bonding head 1 in the gas pipe 2.
【０００５】又、ボンディングヘッド１と基板４の間は
通常０．３ミリメートル乃至３ミリメートル程度と非常
に小さな隙間であるため、効果的に不活性ガスによるシ
ールドをするためにはシールドガス配管ノズル位置の設
定や、その周囲に囲い壁３を形成して密閉状態とする必
要性があった。しかし、現実問題としては、従来利用さ
れていた図５のごとき構造では、接合部をシールドする
のに必要とされる酸素濃度に低減することのできるもの
ではなかった。[0005] Further, since there is a very small gap, usually about 0.3 mm to 3 mm, between the bonding head 1 and the substrate 4, in order to effectively shield with an inert gas, the position of the shield gas pipe nozzle is required. And the necessity of forming the surrounding wall 3 around the surroundings to achieve a closed state. However, as a practical problem, the conventional structure shown in FIG. 5 cannot reduce the oxygen concentration required to shield the junction.
【０００６】[0006]
【発明が解決しようとする課題】本発明は、半導体チッ
プ７の接合部の不活性ガスによるシールドを確実に行な
えると同時にボンディングヘッド１のボンディングのた
めの加熱を利用して、供給される不活性ガスを加熱し、
特別に不活性ガスを加熱するためのガス温度コントロー
ラ２４を別途設ける必要もなく、且つ、接合後は半田硬
化スピードを向上させるため、ボンディングヘッド１や
接合部の冷却機能をも併せ持つ不活性ガス供給機構付ボ
ンディングヘッドを提供することを目的とする。According to the present invention, the bonding of the semiconductor chip 7 can be surely shielded by the inert gas, and at the same time, the heating of the bonding head 1 using the heating for bonding is performed. Heating the active gas,
There is no need to separately provide a gas temperature controller 24 for heating the inert gas, and in order to improve the solder hardening speed after the bonding, an inert gas supply which also has a function of cooling the bonding head 1 and the bonding portion is provided. An object is to provide a bonding head with a mechanism.
【０００７】[0007]
【課題を解決するための手段】本発明は、上記課題を解
決するため、加熱部を有するボンディングヘッドの下面
側の半導体保持領域外に所望数の不活性ガス供給穴を設
け、加熱部を貫通又はこれに接触し、不活性ガス供給穴
に不活性ガスを供給するガス通路を形成し、上記ガス通
路に不活性ガス供給量の切替可能な不活性ガス供給部を
接続し、加熱部の加熱停止指令に基づき不活性ガスの供
給量を変更することを特徴とする不活性ガス供給機構付
ボンディングヘッドを提供する。According to the present invention, in order to solve the above-mentioned problems, a desired number of inert gas supply holes are provided outside the semiconductor holding region on the lower surface side of a bonding head having a heating section, and the heating section is penetrated. Alternatively, a gas passage for supplying an inert gas to the inert gas supply hole is formed in contact with the gas passage, and an inert gas supply unit capable of switching the supply amount of the inert gas is connected to the gas passage to heat the heating unit. Provided is a bonding head with an inert gas supply mechanism, wherein the supply amount of an inert gas is changed based on a stop command.
【０００８】[0008]
【発明の実施の形態】以下、図面に従って本発明の実施
の形態につき説明する。図１は、不活性ガス供給機構付
きボンディングヘッドの一実施例の説明図であり、本実
施例は、加熱部２０を有するボンディングヘッド１と不
活性ガス供給部６とガス供給量制御装置８、及び加熱停
止後のボンディングヘッド１の加熱部２０の必要冷却温
度を感知する熱電対９とからなる。尚、図１中５は基板
ステージで、４が基板ステージ５上に配置される基板
で、７が基板４に接合される半導体チップである。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is an explanatory view of one embodiment of a bonding head with an inert gas supply mechanism. In this embodiment, a bonding head 1 having a heating unit 20, an inert gas supply unit 6, a gas supply amount control device 8, And a thermocouple 9 for sensing a required cooling temperature of the heating unit 20 of the bonding head 1 after the heating is stopped. In FIG. 1, reference numeral 5 denotes a substrate stage, 4 denotes a substrate arranged on the substrate stage 5, and 7 denotes a semiconductor chip bonded to the substrate 4.
【０００９】ボンディングヘッド１の下面側すなわち半
導体チップ７の保持面側の半導体保持領域１０の外側に
所望数（図２の実施例では４個）の不活性ガス供給穴１
１が設けられている。実施例では、不活性ガス供給穴１
１は、ボンディングヘッド１の加熱部２０の下面に交換
可能に装着されるボンディングツール２１に設けられて
いるが、該ボンディングツール２１が加熱部２０と別体
である必要はなく、加熱部２０の下端面にボンディング
ツール部が一体として形成されたもので、その加熱部２
０の下面に不活性ガス供給穴１１が開けられたものであ
ってよい。尚、図２において半導体保持領域１０の中心
部に設けられている穴は半導体チップ吸着穴１２であ
り、図示されていない真空吸引装置が吸気通路１４（図
１、図３及び図４で一点鎖線で示されている）に連結さ
れ、半導体チップ７をボンディングヘッド１に吸着保持
する役目を有する。A desired number (four in the embodiment of FIG. 2) of inert gas supply holes 1 is provided outside the semiconductor holding region 10 on the lower surface side of the bonding head 1, that is, on the holding surface side of the semiconductor chip 7.
1 is provided. In the embodiment, the inert gas supply hole 1
1 is provided on a bonding tool 21 that is exchangeably mounted on the lower surface of the heating unit 20 of the bonding head 1. However, the bonding tool 21 does not need to be separate from the heating unit 20. A bonding tool portion is integrally formed on the lower end surface, and the heating portion 2
0 may have an inert gas supply hole 11 formed in the lower surface thereof. In FIG. 2, a hole provided at the center of the semiconductor holding region 10 is a semiconductor chip suction hole 12, and a vacuum suction device (not shown) is connected to an intake passage 14 (indicated by a dashed line in FIGS. 1, 3 and 4). And has a function of sucking and holding the semiconductor chip 7 on the bonding head 1.
【００１０】加熱部２０を有するボンディングヘッド１
の内部にはボンディングヘッド１の加熱部２０を貫通す
るガス通路１３が形成されている。ガス通路１３は不活
性ガス供給装置８から不活性ガス供給穴１１に不活性ガ
スを供給する。図１、図３及び図４でガス通路１３は点
線で示されている。A bonding head 1 having a heating unit 20
Is formed with a gas passage 13 penetrating through the heating section 20 of the bonding head 1. The gas passage 13 supplies an inert gas from the inert gas supply device 8 to the inert gas supply hole 11. 1, 3 and 4, the gas passage 13 is indicated by a dotted line.
【００１１】図１及び図３に示されるガス通路１３は、
ボンディングヘッド１の加熱部２０の内部を貫通するも
のであるが、加熱部２０の熱源を利用できるものであれ
ば、内部を貫通するものだけでなく、加熱部２０の外周
に巻付けたガス通路１３や、単に加熱部２０に沿って形
成されたガス通路１３で有っても良い。尚、ガス通路１
３が加熱部２０に接するのみで貫通しないものの場合、
不活性ガス供給穴１１の役割は、ボンディングヘッド１
の下端部付近のガス通路１３端部開口部が担当する。The gas passage 13 shown in FIG. 1 and FIG.
The gas passage penetrates the inside of the heating unit 20 of the bonding head 1. If the heat source of the heating unit 20 can be used, not only the one penetrating the inside but also a gas passage wound around the outer periphery of the heating unit 20. 13 or simply a gas passage 13 formed along the heating section 20. In addition, gas passage 1
In the case where 3 is only in contact with the heating unit 20 and does not penetrate,
The inert gas supply hole 11 plays a role in the bonding head 1.
Of the gas passage 13 near the lower end of the gas passage.
【００１２】尚、図３に示すようにボンディングヘッド
１の下端部の周囲に密閉用枠１５を形成することで、不
活性ガスによるシールドを効果的に行なうこともでき
る。By forming the sealing frame 15 around the lower end of the bonding head 1 as shown in FIG. 3, the shielding by the inert gas can be effectively performed.
【００１３】上記ガス通路１３には、不活性ガス供給量
の切替可能な不活性ガス供給部６が接続されている。不
活性ガス供給部６は、ガス供給ポンプ１８と、高圧ガス
供給用の電磁弁１７、レギュレータ１６及び低圧ガス供
給用の電磁弁２７、レギュレータ２６を有している。図
１中上部の電磁弁１７とレギュレータ１６が高圧ガス供
給用で下部の電磁弁２７とレギュレータ２６が低圧ガス
供給用である。The gas passage 13 is connected to an inert gas supply unit 6 capable of switching the supply amount of the inert gas. The inert gas supply unit 6 includes a gas supply pump 18, an electromagnetic valve 17 for supplying high-pressure gas, a regulator 16, an electromagnetic valve 27 for supplying low-pressure gas, and a regulator 26. In FIG. 1, the upper electromagnetic valve 17 and the regulator 16 are for supplying high-pressure gas, and the lower electromagnetic valve 27 and the regulator 26 are for supplying low-pressure gas.
【００１４】不活性ガス供給部６は、ボンディングヘッ
ド１の加熱停止指令に基づき不活性ガスの供給量を変更
するガス供給量制御装置８が接続されている。ガス供給
量の変更は実施例によれば高圧ガスの供給（強）と低圧
ガスの供給（弱）の２種類が設定されている。The inert gas supply unit 6 is connected to a gas supply amount control device 8 that changes the supply amount of the inert gas based on a command to stop the heating of the bonding head 1. According to the embodiment, the gas supply amount is changed in two types: supply of a high-pressure gas (strong) and supply of a low-pressure gas (weak).
【００１５】実施例の設定では、不活性ガス供給部６か
ら供給される不活性ガスは、窒素ガスを用い、不活性ガ
スの供給量としては強弱二段階とし、低圧ガス供給経路
を利用する弱で毎分１リットル、高圧ガス供給経路を利
用する強で毎分３０リットルとする。他方、熱電対９が
感知する設定温度としては半田が硬化する摂氏１８０度
とする。In the setting of the embodiment, the inert gas supplied from the inert gas supply section 6 uses nitrogen gas, the amount of the inert gas to be supplied is set to two levels, and the inert gas is supplied using a low pressure gas supply path. To 1 liter per minute, and 30 liters per minute at high pressure using the high pressure gas supply path. On the other hand, the set temperature sensed by the thermocouple 9 is 180 degrees Celsius at which the solder hardens.
【００１６】第一実施例の動作に付いて説明する。ま
ず、第一に、ボンディングを開始する。この時、ボンデ
ィングヘッド１の加熱部２０の加熱も開始し、不活性ガ
スは弱にて供給される。弱で供給される不活性ガスは流
量が小さく流速も遅いのでガス通路１３を移動中にボン
ディングヘッド１の加熱部２０により充分加熱される。The operation of the first embodiment will be described. First, bonding is started. At this time, heating of the heating unit 20 of the bonding head 1 also starts, and the inert gas is supplied at a low level. Since the flow rate of the weakly supplied inert gas is small and the flow rate is low, the inert gas is sufficiently heated by the heating unit 20 of the bonding head 1 while moving through the gas passage 13.
【００１７】第二に、ボンディングための加熱に必要な
所定時間経過後、ボンディングヘッド１の加熱部２０の
加熱は停止する。第三に、ガス供給量制御装置８がボン
ディングヘッド１の加熱部２０の加熱停止指令を受け、
不活性ガスを強に切替え供給する。強で供給される不活
性ガスは、流量も多く流速も速いのでガス通路１３を移
動中に加熱停止となった加熱部２０及びボンディングヘ
ッド１を冷却させる。第四に、ボンディングヘッド１の
温度感知センサとなる熱電対９により所定温度（前記設
定例では摂氏１８０度）が検出されたら不活性ガスの供
給を停止する。そして、第五に、ボンディングヘッド１
が上昇しボンディング動作は終了する。Second, after a predetermined time required for heating for bonding has elapsed, heating of the heating unit 20 of the bonding head 1 is stopped. Third, the gas supply amount control device 8 receives a heating stop command of the heating unit 20 of the bonding head 1,
Inert gas is switched to strong supply. Since the inert gas supplied at a high flow rate and the flow rate is high at a high rate, the heating section 20 and the bonding head 1 that have stopped heating while moving through the gas passage 13 are cooled. Fourth, when a predetermined temperature (180 degrees Celsius in the setting example) is detected by the thermocouple 9 serving as a temperature sensor of the bonding head 1, the supply of the inert gas is stopped. Fifth, the bonding head 1
Rises, and the bonding operation ends.
【００１８】次に図４に示す第二実施例の動作に付いて
説明する。第一に、ボンディング開始する。この時、不
活性ガスは弱にて供給される。ボンディングための加熱
の必要な所定時間経過後、ボンディングヘッド１の加熱
部２０の加熱を停止する。第三に、不活性ガスを強に切
替え供給する。次に第二実施例では熱電対９がボンディ
ングヘッド１の加熱部２０に付設されていないので、タ
イマー１９により設定された所定時間（加熱部２０が摂
氏１８０度になるための時間）経過後、不活性ガスの供
給を停止する。そして、第五に、ボンディングヘッド１
が上昇しボンディング動作は終了する。Next, the operation of the second embodiment shown in FIG. 4 will be described. First, bonding is started. At this time, the inert gas is supplied at a low level. After a predetermined time required for heating for bonding has elapsed, the heating of the heating unit 20 of the bonding head 1 is stopped. Third, the inert gas is strongly switched and supplied. Next, in the second embodiment, since the thermocouple 9 is not attached to the heating unit 20 of the bonding head 1, after a predetermined time (time required for the heating unit 20 to reach 180 degrees Celsius) set by the timer 19 elapses, Stop supplying inert gas. Fifth, the bonding head 1
Rises, and the bonding operation ends.
【００１９】尚、不活性ガスの弱から強への切り換えの
タイミングは、加熱部２０の加熱停止指令を受け直ちに
行われる場合と、加熱停止指令を受けた後一定時間の経
過を待って行われる場合とがある。一定時間の経過後の
切り換えは、第一実施例の場合であれば、熱電対９が所
定温度（摂氏１８０度以上の設定温度）を検出するまで
待機し、所定温度を検出した時点で切り換えが行われ
る。又、第二実施例では観測された前記温度に至る所定
時間をタイマー１９に設定し、所定時間が経過した後、
切り換えが行われる。The switching of the inert gas from weak to strong is performed either immediately after receiving the heating stop command of the heating unit 20 or after a certain period of time after receiving the heating stop command. There are cases. In the case of the first embodiment, the switching after the elapse of the predetermined time is awaiting until the thermocouple 9 detects a predetermined temperature (a set temperature of 180 degrees Celsius or more), and when the predetermined temperature is detected, the switching is performed. Done. In the second embodiment, a predetermined time to reach the observed temperature is set in the timer 19, and after the predetermined time has elapsed,
Switching is performed.
【００２０】[0020]
【発明の効果】本発明は、次のような効果を発揮する。
第一に本発明は、加熱部を有するボンディングヘッドの
下面側の半導体保持領域外に所望数の不活性ガス供給穴
を設けたため、ボンディングヘッドの周囲を密閉構造と
しなくとも接合部を有効に不活性ガスによりシールドで
き、半田の酸化を確実に防止できるものとなった。The present invention has the following effects.
First, in the present invention, since a desired number of inert gas supply holes are provided outside the semiconductor holding region on the lower surface side of the bonding head having the heating section, the bonding section cannot be effectively formed without having a sealed structure around the bonding head. The shield can be achieved by the active gas, and the oxidation of the solder can be reliably prevented.
【００２１】特に、現実問題としては、ボンディングヘ
ッドと基板の間は通常０．３ミリメートル及至３ミリメ
ートル程度であるため、シールドすべき範囲が狭く少量
の不活性ガスで効果的な接合部のシールドが行なえるも
のとなった。In particular, as a practical problem, since the distance between the bonding head and the substrate is usually about 0.3 mm to 3 mm, the shielding area is narrow and an effective shield with a small amount of inert gas is effective. It can be done.
【００２２】第二に本発明は、ボンディングヘッドの加
熱部を貫通又はこれに接触するガス通路を設け、不活性
ガス供給穴に不活性ガスを供給するもの、視点を変えれ
ば、基板上のボンディング部に不活性ガスを供給するも
のあるので、ボンディングヘッドにより不活性ガスが加
熱され、不活性ガスを半導体とほぼ同等の温度にコント
ロールすることが可能となり、特別に加熱制御しなくて
も接合部の温度の均一性が可能となった。すなわち、シ
ールドガス専用の温度コントロールが不要となったので
ある。Secondly, the present invention provides a gas passage which penetrates or contacts a heating portion of a bonding head and supplies an inert gas to an inert gas supply hole. Since the inert gas is supplied to the part, the inert gas is heated by the bonding head, and the temperature of the inert gas can be controlled to approximately the same as that of the semiconductor. Temperature uniformity became possible. That is, the temperature control dedicated to the shield gas is not required.
【００２３】第三に本発明は、ガス通路に不活性ガス供
給量の切替可能な不活性ガス供給部を接続し、ボンディ
ングヘッドの加熱部の加熱停止指令に基づき不活性ガス
の供給量を変更することを可能としため、加熱部の加熱
停止の後、不活性ガスの供給量を増加させることによ
り、ボンディングヘッド、ツールの蓄熱を放出でき、半
田の硬化を早めることができるものとなった。すなわ
ち、本発明は不活性ガスによる接合部のシールドだけで
なく、ガスの流量、流速を高くすることで加熱部やボン
ディングヘッド全体の冷却にも使用できるものとなっ
た。Thirdly, according to the present invention, an inert gas supply unit capable of switching the supply amount of the inert gas is connected to the gas passage, and the supply amount of the inert gas is changed based on a heating stop command of the heating unit of the bonding head. By increasing the supply of the inert gas after the heating of the heating unit is stopped, the heat stored in the bonding head and the tool can be released, and the curing of the solder can be accelerated. That is, the present invention can be used not only for shielding the bonding portion with an inert gas but also for cooling the heating portion and the entire bonding head by increasing the flow rate and flow rate of the gas.
【図１】不活性ガス供給機構付きボンディングヘッドの
一実施例の説明図FIG. 1 is an explanatory view of one embodiment of a bonding head with an inert gas supply mechanism.
【図２】ボンディングヘッドの底面図FIG. 2 is a bottom view of a bonding head.
【図３】密閉用枠付きボンディングヘッドの側面図FIG. 3 is a side view of a bonding head with a sealing frame.
【図４】不活性ガス供給機構付きボンディングヘッドの
他実施例の説明図FIG. 4 is an explanatory view of another embodiment of the bonding head with an inert gas supply mechanism.
【図５】従来のボンディングヘッドと不活性ガス供給装
置の関係を示す説明図FIG. 5 is an explanatory diagram showing a relationship between a conventional bonding head and an inert gas supply device.
１．．．．．．ボンディングヘッド ２．．．．．．ガス配管 ３．．．．．．囲い壁 ４．．．．．．基板 ５．．．．．．基板ステージ ６．．．．．．不活性ガス供給部 ７．．．．．．半導体チップ ８．．．．．．ガス供給量制御装置 ９．．．．．．熱電対 １０．．．．．半導体保持領域 １１．．．．．不活性ガス供給穴 １２．．．．．半導体チップ吸着穴 １３．．．．．ガス通路 １４．．．．．吸気通路 １５．．．．．密閉用枠 １６、２６．．レギュレータ １７、２７．．電磁弁 １８．．．．．ガス供給ポンプ １９．．．．．タイマー ２０．．．．．加熱部 ２１．．．．．ボンディングツール ２４．．．．．ガス温度コントローラ 1. . . . . . 1. Bonding head . . . . . Gas piping 3. . . . . . Enclosure wall 4. . . . . . Substrate 5. . . . . . Substrate stage 6. . . . . . 6. Inert gas supply section . . . . . Semiconductor chip 8. . . . . . 8. Gas supply control device . . . . . Thermocouple 10. . . . . Semiconductor holding region 11. . . . . Inert gas supply hole 12. . . . . 12. Semiconductor chip suction hole . . . . Gas passage 14. . . . . Intake passage 15. . . . . Sealing frame 16, 26. . Regulator 17, 27. . Solenoid valve 18. . . . . Gas supply pump 19. . . . . Timer 20. . . . . Heating unit 21. . . . . Bonding tool 24. . . . . Gas temperature controller
Claims (1)
側の半導体保持領域外に所望数の不活性ガス供給穴を設
け、加熱部を貫通又はこれに接触し、不活性ガス供給穴
に不活性ガスを供給するガス通路を形成し、上記ガス通
路に不活性ガス供給量の切替可能な不活性ガス供給部を
接続し、加熱部の加熱停止指令に基づき不活性ガスの供
給量を変更することを特徴とする不活性ガス供給機構付
ボンディングヘッド。A desired number of inert gas supply holes are provided outside a semiconductor holding region on a lower surface side of a bonding head having a heating portion, and the inert gas supply hole penetrates through or contacts the heating portion. Forming a gas passage for supplying the gas, connecting an inert gas supply unit capable of switching the supply amount of the inert gas to the gas passage, and changing the supply amount of the inert gas based on a heating stop command of the heating unit. Characteristic bonding head with inert gas supply mechanism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02837897A JP3455838B2 (en) | 1997-01-28 | 1997-01-28 | Bonding head with inert gas supply mechanism |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02837897A JP3455838B2 (en) | 1997-01-28 | 1997-01-28 | Bonding head with inert gas supply mechanism |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10214864A true JPH10214864A (en) | 1998-08-11 |
| JP3455838B2 JP3455838B2 (en) | 2003-10-14 |
Family
ID=12246988
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP02837897A Expired - Fee Related JP3455838B2 (en) | 1997-01-28 | 1997-01-28 | Bonding head with inert gas supply mechanism |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3455838B2 (en) |
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|---|---|---|---|---|
| JP2009076606A (en) * | 2007-09-19 | 2009-04-09 | Shibaura Mechatronics Corp | Mounting device and mounting method for electronic component |
| JP2012015255A (en) * | 2010-06-30 | 2012-01-19 | Shinkawa Ltd | Electronic component mounting apparatus and electronic component mounting method |
| JP2012049470A (en) * | 2010-08-30 | 2012-03-08 | Nec Corp | Semiconductor holding apparatus and semiconductor bonding apparatus equipped with the same |
| JP2012160501A (en) * | 2011-01-31 | 2012-08-23 | Sony Chemical & Information Device Corp | Semiconductor manufacturing apparatus, semiconductor manufacturing method and semiconductor device |
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| KR20150102739A (en) * | 2014-02-28 | 2015-09-07 | 쿨리케 앤드 소파 인더스트리즈, 인코포레이티드 | Thermocompression bonding systems and methods of operating the same |
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-
1997
- 1997-01-28 JP JP02837897A patent/JP3455838B2/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009076606A (en) * | 2007-09-19 | 2009-04-09 | Shibaura Mechatronics Corp | Mounting device and mounting method for electronic component |
| JP2012015255A (en) * | 2010-06-30 | 2012-01-19 | Shinkawa Ltd | Electronic component mounting apparatus and electronic component mounting method |
| US9398736B2 (en) | 2010-06-30 | 2016-07-19 | Shinkawa Ltd. | Electronic component mounting apparatus and the same method thereof |
| JP2012049470A (en) * | 2010-08-30 | 2012-03-08 | Nec Corp | Semiconductor holding apparatus and semiconductor bonding apparatus equipped with the same |
| JP2012160501A (en) * | 2011-01-31 | 2012-08-23 | Sony Chemical & Information Device Corp | Semiconductor manufacturing apparatus, semiconductor manufacturing method and semiconductor device |
| KR20150094116A (en) * | 2014-02-10 | 2015-08-19 | 삼성전자주식회사 | Die bonding apparatus |
| KR20150102739A (en) * | 2014-02-28 | 2015-09-07 | 쿨리케 앤드 소파 인더스트리즈, 인코포레이티드 | Thermocompression bonding systems and methods of operating the same |
| JP2015165566A (en) * | 2014-02-28 | 2015-09-17 | クリック アンド ソッファ インダストリーズ、インク． | Thermal compression bonding system and method for operating the same |
| US20200243477A1 (en) * | 2015-11-05 | 2020-07-30 | Furukawa Electric Co., Ltd. | Die bonding apparatus and die bonding method |
| KR102233338B1 (en) * | 2020-10-12 | 2021-03-29 | 주식회사 저스템 | Apparatus for preventing oxidization of flip chip bonding |
| US20220367404A1 (en) * | 2021-05-11 | 2022-11-17 | Shibuya Corporation | Bonding apparatus |
| US11817419B2 (en) * | 2021-05-11 | 2023-11-14 | Shibuya Corporation | Bonding head with large and small spray apertures |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3455838B2 (en) | 2003-10-14 |
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