JP2012038891A5 - - Google Patents

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Publication number
JP2012038891A5
JP2012038891A5 JP2010177163A JP2010177163A JP2012038891A5 JP 2012038891 A5 JP2012038891 A5 JP 2012038891A5 JP 2010177163 A JP2010177163 A JP 2010177163A JP 2010177163 A JP2010177163 A JP 2010177163A JP 2012038891 A5 JP2012038891 A5 JP 2012038891A5
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JP
Japan
Prior art keywords
region
thin film
film transistor
width direction
gate
Prior art date
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Pending
Application number
JP2010177163A
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English (en)
Japanese (ja)
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JP2012038891A (ja
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Publication date
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Priority to JP2010177163A priority Critical patent/JP2012038891A/ja
Priority claimed from JP2010177163A external-priority patent/JP2012038891A/ja
Publication of JP2012038891A publication Critical patent/JP2012038891A/ja
Publication of JP2012038891A5 publication Critical patent/JP2012038891A5/ja
Pending legal-status Critical Current

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JP2010177163A 2010-08-06 2010-08-06 ボトムゲート型薄膜トランジスタ Pending JP2012038891A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010177163A JP2012038891A (ja) 2010-08-06 2010-08-06 ボトムゲート型薄膜トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010177163A JP2012038891A (ja) 2010-08-06 2010-08-06 ボトムゲート型薄膜トランジスタ

Publications (2)

Publication Number Publication Date
JP2012038891A JP2012038891A (ja) 2012-02-23
JP2012038891A5 true JP2012038891A5 (https=) 2013-11-14

Family

ID=45850572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010177163A Pending JP2012038891A (ja) 2010-08-06 2010-08-06 ボトムゲート型薄膜トランジスタ

Country Status (1)

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JP (1) JP2012038891A (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9012910B2 (en) * 2012-01-11 2015-04-21 Sharp Kabushiki Kaisha Semiconductor device, display device, and semiconductor device manufacturing method
US8901556B2 (en) 2012-04-06 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
TWI657539B (zh) * 2012-08-31 2019-04-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置
US9166021B2 (en) * 2012-10-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5722293B2 (ja) * 2012-10-19 2015-05-20 株式会社神戸製鋼所 薄膜トランジスタ
JP5960626B2 (ja) * 2013-03-08 2016-08-02 富士フイルム株式会社 薄膜トランジスタを備えた半導体装置の製造方法
US9312392B2 (en) * 2013-05-16 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2018100465A1 (ja) * 2016-12-02 2018-06-07 株式会社半導体エネルギー研究所 半導体装置
JP2020027862A (ja) * 2018-08-10 2020-02-20 株式会社ジャパンディスプレイ 表示装置及びその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3777706B2 (ja) * 1997-02-21 2006-05-24 ソニー株式会社 表示装置
KR101518091B1 (ko) * 2007-12-13 2015-05-06 이데미쓰 고산 가부시키가이샤 산화물 반도체를 이용한 전계 효과형 트랜지스터 및 그 제조방법
JP4678403B2 (ja) * 2007-12-19 2011-04-27 トヨタ自動車株式会社 自動変速機の制御装置、制御方法、その方法を実現させるプログラムおよびそのプログラムを記録した記録媒体
JP5704790B2 (ja) * 2008-05-07 2015-04-22 キヤノン株式会社 薄膜トランジスタ、および、表示装置
JP4623179B2 (ja) * 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
TWI467663B (zh) * 2008-11-07 2015-01-01 Semiconductor Energy Lab 半導體裝置和該半導體裝置的製造方法
JP2010165961A (ja) * 2009-01-19 2010-07-29 Videocon Global Ltd 薄膜トランジスタ、表示装置及びこれらの製造方法

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