JP2012018969A - Apparatus for manufacturing semiconductor and method of transferring semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To achieve reduction of electrostatic breakdown of a semiconductor device.SOLUTION: Since a wall thickness of a support part 12c of a suction pad 12 is thinner than that of a suction part 12a and the support part 12c is formed bendable, bending of the support part 12c enables suppressing slipping on the suction part 12a contacting with an IC 13 and reducing friction occurring between a surface of the IC 13 and the suction part 12a when the IC 13 undergoes vacuum suction by the suction pad 12. Therefore charging on the surface of the IC 13 can be lowered. As a result the breakdown due to electrostatic discharge of the IC 13 can be reduced.

Description

  The present invention relates to a semiconductor manufacturing apparatus and a semiconductor device transfer technique, and more particularly to a technique effective when applied to reduction of electrostatic breakdown of a semiconductor device.

  In a transport device that sucks and transports a semiconductor package, the technology of sucking up the semiconductor package with a suction pad and transferring the semiconductor package with a vertically moving cylinder, a vertically moving guide, a longitudinally moving cylinder, and a longitudinally moving guide, For example, it describes in Unexamined-Japanese-Patent No. 5-77185 (patent document 1).

Japanese Patent Laid-Open No. 5-77185

  In order to prevent destruction of semiconductor devices "hereinafter referred to as IC (Integrated Circuit) or semiconductor device" due to electrostatic discharge (ESD), countermeasures in post-process (assembly to test) facilities are required. ing.

  It is no exaggeration to say that the charging factors of the semiconductor device (IC) after the packaged process are only “friction charging with a tray or the like during transport between processes” and “friction charging with suction pads in equipment”.

  At that time, in the case of “friction charging during transfer between processes”, there are choices of source countermeasures and subsequent measures, but for “friction charging by suction pads in equipment”, countermeasures can not be taken unless the source is eliminated. I understood that.

  In view of this, the present inventor has examined the transport of a semiconductor device that is sucked and held via a suction pad by vacuum suction.

  29 is a perspective view showing a configuration of a semiconductor manufacturing apparatus (test handler) compared and examined by the present inventor, FIG. 30 is an enlarged partial sectional view showing the structure of part A in FIG. 29, and FIG. FIG. 32 is a cross-sectional view showing a state after the connection with the sleeve of the suction pad provided in the test handler, FIG. 32 is a cross-sectional view showing the structure after the connection with the sleeve of the suction pad shown in FIG. 31, and FIG. FIG. 34 is a cross-sectional view showing the structure of the suction pad shown in FIG.

  FIG. 35 is a partial sectional view showing a structure before suction when the semiconductor device is sucked and transported using the test handler shown in FIG. 29, and FIG. 36 is a diagram when the semiconductor device is sucked and transported by the suction pad shown in FIG. FIG. 37 is a partial cross-sectional view showing the structure when the semiconductor device is sucked by the suction pad shown in FIG. 29, and FIG. 38 is a partial cross-sectional view showing the structure when the pad is in contact. It is a fragmentary sectional view which shows the structure when carrying out adsorption conveyance.

  39 is a partial cross-sectional view showing the structure when the suction of the semiconductor device by the suction pad shown in FIG. 29 is stopped, and FIG. 40 is a portion showing the structure when the suction pad shown in FIG. 29 is separated from the semiconductor device. FIG. 41 is a partial sectional view showing the structure when the semiconductor device after the test is sucked by the suction pad shown in FIG.

  First, the configuration of the test handler 100 of the comparative example examined by the present inventor will be described using FIG. 29 and FIG. The test handler 100 includes a supply transfer 3 having a suction head unit 101 provided with a suction pad 30, and further has a mechanism similar to the supply transfer 3 separately from the supply transfer 3, a contact supply transfer 4, a contact discharge A transfer 6 and a storage transfer 7 are provided.

  Further, the test handler 100 includes empty tray storages 1 and 10 for storing empty trays, a non-defective IC storage 8 for storing non-defective ICs based on test results, a defective IC storage 9 for storing defective ICs, and the like. .

  31 to 34 show the structure of the suction pad 30 and the suction sleeve 11 to which the suction pad 30 is fixed. As shown in FIG. 31, the suction pad 30 is attached by being pushed into the suction sleeve 11 in the direction of arrow B. The suction portion 30a having the IC contact surface 30b at the tip of the suction pad 30 is a trumpet type. The suction pad 30 is made of non-metal, and the suction sleeve 11 is made of metal.

  When testing an unmeasured IC (semiconductor device) 13 that has not yet been tested, the IC 13 is transported from the unmeasured IC storage 2 storing the unmeasured IC 13 by the supply transfer 3, and the contact supply transfer 4 To the IC measurement unit 5 via. At that time, the lead 14 of the IC 13 charged by the adsorption / detachment operation touches the grounded measurement contact pin 16 shown in FIG. 40 of the IC measurement unit 5, and there is a problem that electrostatic discharge is instantaneously generated and destroyed. .

  FIGS. 35 to 40 show a mechanism by which the IC 13 is charged by the adsorption / detachment operation and a detailed mechanism in which the lead 14 touches the measurement contact pin 16 and is broken due to electrostatic discharge.

  FIG. 35 shows a state before the IC 13 is adsorbed. As shown in FIG. 36, the suction pad 30 is also lowered by the lowering C of the suction sleeve 11, and the IC contact surface 30b of the suction portion 30a of the suction pad 30 is pressed while sliding on the surface of the IC 13, so the surfaces of the suction pad 30 and the IC 13 Is rubbed by “pad slip”, and for example, − (minus) charge is generated on the surface of the IC 13 to be charged.

  In FIG. 37, the suction pad 30 is pressed against the IC 13, and the inside of the suction pad 30 is evacuated by the negative pressure (arrow D) of the vacuum source 18 when the electromagnetic valve 17 is opened, thereby sucking the IC 13. State. FIG. 38 shows a structure in which the IC 13 is held by the suction pad 30 and is transported in this state.

  In this test handler 100, the series of operations shown in FIGS. 35 to 38 are performed twice by the supply transfer 3 and the contact supply transfer 4, and the IC 13 is carried to the IC measurement unit 5.

  FIG. 39 shows a state where, for example, the IC 13 carried to the IC measurement unit 5 is disconnected from the vacuum exhaust by the cutoff of the electromagnetic valve 17 and the IC 13 is detached. Since the suction pad 30 tries to return to its original shape, the IC contact surface 30b of the suction part 30a of the suction pad 30 slides on the surface of the IC 13, and the IC contact surface 30b and the surface of the IC 13 rub against each other again due to “pad slip”. Thus, for example, the surface of the IC 13 is further charged with a negative charge.

  FIG. 40 shows a state where the IC 13 is detached (separated), the suction pad 30 is raised in the direction of arrow E, and the lead 14 of the IC 13 touches the measurement contact pin 16. At this time, for example,-(minus) charge charged on the surface of the IC 13 is electrostatically discharged through the measurement contact pin 16, and the gate portion of the IC 13 is destroyed. In this way, since the IC 13 touches the measurement contact pin 16 immediately after being separated from the suction pad 30, there is no timing of charge removal by the ionizer, and since the transport destination is the measurement contact pin 16, insulation to prevent discharge And high resistance surface treatment is not possible, and there is no countermeasure.

  In order to suppress the charging of the IC 13, there are a “conductive rubber suction pad” mixed with carbon, a “metal pad”, and the like.

  However, the former “conductive rubber suction pad” is charged by friction at the time of IC suction / detachment, as described above.

  Further, since the shape is always attracted due to deterioration (shrinked state), it is necessary to increase the amount of pressing so that a suction error does not occur due to insufficient height. As a result, the frictional force becomes larger, the surface of the IC 13 becomes higher charged (200 V or more), and the IC 13 that is weak against high charge is destroyed.

  Further, if the trumpet type adsorbing portion 30a deviates from the center (center of gravity) of the IC 13, the adsorbing posture is inclined as shown in FIG. 41, the adsorbing is not stable, and a positional deviation is caused when the adsorbing portion 30a is detached at the conveyance destination. It is a problem.

  The latter “metal pad” hardly charges the IC 13 and there is no problem with respect to static electricity, but slipping occurs between the suction pad 30 and the IC 13 during transportation, resulting in frequent misalignment of the IC 13. .

  Another problem is that if foreign matter or the like is present on the surface of the IC 13 or the surface of the metal pad, suction mistakes frequently occur and suction holding becomes unstable.

  The above-mentioned patent document 1 (Japanese Patent Laid-Open No. 5-77185) discloses a technique relating to a suction head of a transport device. However, even when a semiconductor package is sucked by a suction pad described therein, suction is performed. There is a concern that friction occurs between the pad and the semiconductor package, and charging may occur on the semiconductor package due to this friction.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a technique capable of reducing the electrostatic discharge and reducing the breakdown of the semiconductor device.

  Another object of the present invention is to provide a technique capable of stabilizing the suction posture of a semiconductor device when the semiconductor device is sucked by a suction pad.

  Furthermore, another object of the present invention is to provide a technique capable of suppressing deformation of a lead in suction conveyance of a semiconductor device.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in this application, the outline of typical ones will be briefly described as follows.

  A semiconductor manufacturing apparatus according to a typical embodiment forms a hollow portion communicating with an evacuation system and extends in a direction intersecting with the adsorption portion and a cylindrical adsorption portion extending along a evacuation direction. And a suction pad that includes the suction pad, and a suction head portion that includes the suction pad and that vacuum-sucks and transports the semiconductor device via the suction pad. The thickness of the support part is formed thinner than the thickness of the adsorption part, and the support part is formed to be bendable.

  In addition, a method for transporting a semiconductor device according to a representative embodiment includes: (a) a cylindrical suction portion that forms a hollow portion that communicates with a vacuum exhaust system and extends along a vacuum exhaust direction; In a semiconductor manufacturing apparatus provided with a suction pad that extends in a crossing direction and has a support part that supports the suction part, the semiconductor device is provided by the suction part of the suction pad by performing vacuum exhaustion by the vacuum exhaust system. And (b) in the semiconductor manufacturing apparatus, the step of transporting the semiconductor device while being sucked and held by the suction pad, and the thickness of the support portion in the suction pad is: The semiconductor device is formed thinner than the thickness of the suction portion, and the support portion is bent when the vacuum exhaust system is evacuated in the step (a). It is to vacuum suction.

  Of the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.

  When the semiconductor device is sucked and held, charging on the surface of the semiconductor device can be reduced, and the breakdown of the semiconductor device due to electrostatic discharge can be reduced.

  In addition, since the charge on the surface of the semiconductor device during vacuum suction can be reduced, the suction posture of the semiconductor device can be stabilized.

It is a perspective view which shows an example of the structure of the semiconductor manufacturing apparatus of Embodiment 1 of this invention. It is a fragmentary sectional view which expands and shows the structure of the A section shown in FIG. It is an external appearance perspective view which shows an example of the structure of the suction pad shown in FIG. It is sectional drawing which shows an example of the structure of the suction pad shown in FIG. It is sectional drawing which shows an example of the structure after the coupling | bonding with the sleeve of the suction pad shown in FIG. It is sectional drawing which shows an example of the relationship of the magnitude | size of the characteristic part of the suction pad shown in FIG. It is sectional drawing which shows an example of the relationship of the magnitude | size of the characteristic part of the suction pad shown in FIG. It is sectional drawing which shows an example of the relationship of the magnitude | size of the characteristic part of the suction pad shown in FIG. It is a fragmentary sectional view which shows an example of the structure at the time of the semiconductor device adsorption | suction of the suction pad shown in FIG. It is a fragmentary sectional view which shows the structure at the time of the pad contact at the time of carrying a semiconductor device by suction conveyance with the suction pad shown in FIG. FIG. 4 is a partial cross-sectional view showing a structure when a semiconductor device is sucked by a suction pad shown in FIG. 3. FIG. 4 is a partial cross-sectional view showing a structure when the semiconductor device is sucked and conveyed by the suction pad shown in FIG. 3. It is an expanded partial sectional view which shows the structure of the 1st modification of the suction pad of Embodiment 1 of this invention. It is an expanded partial sectional view which shows the structure of the 2nd modification of the suction pad of Embodiment 1 of this invention. It is an expanded partial sectional view which shows the detailed structure of the suction pad shown in FIG. It is an external appearance perspective view which shows an example of the structure of the suction pad of Embodiment 2 of this invention. It is sectional drawing which shows an example of the structure of the suction pad shown in FIG. It is sectional drawing which shows an example of the structure after the coupling | bonding with the sleeve of the suction pad shown in FIG. It is sectional drawing which shows an example of the relationship of the magnitude | size of the characteristic part of the suction pad shown in FIG. It is sectional drawing which shows an example of the relationship of the magnitude | size of the characteristic part of the suction pad shown in FIG. It is sectional drawing which shows an example of the relationship of the magnitude | size of the characteristic part of the suction pad shown in FIG. It is a fragmentary sectional view which shows an example of the structure at the time of the semiconductor device adsorption | suction of the suction pad shown in FIG. It is a fragmentary sectional view which shows the structure at the time of pad contact at the time of carrying a semiconductor device by suction conveyance with the suction pad shown in FIG. FIG. 17 is a partial cross-sectional view showing a structure when the semiconductor device is sucked by the suction pad shown in FIG. 16. FIG. 17 is a partial cross-sectional view showing a structure when the semiconductor device is sucked and conveyed by the suction pad shown in FIG. 16. It is a back view which shows the structure of the other 1st modification of the IC contact surface of the suction pad of embodiment of this invention. It is a back view which shows the structure of the other 2nd modification of IC contact surface of the suction pad of embodiment of this invention. It is a back view which shows the structure of the other 3rd modification of IC contact surface of the suction pad of embodiment of this invention. It is a perspective view which shows the structure of the semiconductor manufacturing apparatus (test handler) of a comparative example. It is a fragmentary sectional view which expands and shows the structure of the A section of FIG. FIG. 30 is a cross-sectional view showing a coupling state with a sleeve of a suction pad provided in the test handler of FIG. 29. FIG. 32 is a cross-sectional view showing the structure after coupling with the sleeve of the suction pad shown in FIG. 31. It is an external appearance perspective view which shows the structure of the suction pad shown in FIG. It is sectional drawing which shows the structure of the suction pad shown in FIG. FIG. 30 is a partial cross-sectional view showing a structure before suction when a semiconductor device is sucked and transported using the test handler shown in FIG. 29; FIG. 30 is a partial cross-sectional view showing a structure at the time of pad contact when the semiconductor device is sucked and conveyed by the suction pad shown in FIG. 29. FIG. 30 is a partial cross-sectional view showing the structure when the semiconductor device is sucked by the suction pad shown in FIG. 29. FIG. 30 is a partial cross-sectional view showing a structure when the semiconductor device is sucked and conveyed by the suction pad shown in FIG. 29. FIG. 30 is a partial cross-sectional view illustrating a structure when the semiconductor device is stopped by the suction pad illustrated in FIG. 29. FIG. 30 is a partial cross-sectional view showing a structure when the suction pad shown in FIG. 29 is separated from the semiconductor device. FIG. 30 is a partial cross-sectional view showing the structure when the semiconductor device after the test is sucked by the suction pad shown in FIG. 29;

  In the following embodiments, the description of the same or similar parts will not be repeated in principle unless particularly necessary.

  Further, in the following embodiment, when it is necessary for the sake of convenience, the description will be divided into a plurality of sections or embodiments, but they are not irrelevant to each other unless otherwise specified. The other part or all of the modifications, details, supplementary explanations, and the like are related.

  Also, in the following embodiments, when referring to the number of elements (including the number, numerical value, quantity, range, etc.), particularly when clearly indicated and when clearly limited to a specific number in principle, etc. Except, it is not limited to the specific number, and it may be more or less than the specific number.

  Further, in the following embodiments, the constituent elements (including element steps) are not necessarily indispensable unless otherwise specified and clearly considered essential in principle. Needless to say.

  Further, in the following embodiments, regarding constituent elements and the like, when “consisting of A”, “consisting of A”, “having A”, and “including A” are specifically indicated that only those elements are included. It goes without saying that other elements are not excluded except in the case of such cases. Similarly, in the following embodiments, when referring to the shapes, positional relationships, etc. of the components, etc., the shapes are substantially the same unless otherwise specified, or otherwise apparent in principle. And the like are included. The same applies to the above numerical values and ranges.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiments, and the repetitive description thereof will be omitted.

(Embodiment 1)
FIG. 1 is a perspective view showing an example of the structure of the semiconductor manufacturing apparatus according to the first embodiment of the present invention, and FIG. 2 is an enlarged partial sectional view showing the structure of part A shown in FIG.

  The semiconductor manufacturing apparatus according to the first embodiment includes a mechanism for sucking and holding and transporting a semiconductor device (also referred to as a semiconductor package or a semiconductor device) assembled in a post-process of the semiconductor manufacturing process. Now, a test handler 50 shown in FIG. 1 will be described as an example of the semiconductor manufacturing apparatus.

  That is, the test handler 50 is a manufacturing apparatus that tests (measures) the IC 13 that is the assembled semiconductor device, and selects and stores the IC 13 as a non-defective product or a defective product based on the test result. The IC 13 is provided with a mechanism capable of transporting the IC 13 while being held by vacuum suction when the IC 13 is transported to and stored in a predetermined place after the test.

  The configuration of the test handler 50 according to the first embodiment will be described. The supply handler 3 includes the suction head unit 51 provided with the suction pad 12 that can hold the IC 13 by vacuum suction. The suction head unit 51 includes the suction pad 12 and conveys the IC 13 by vacuum suction through the suction pad 12. The suction head unit 51 is connected to a vacuum exhaust system 19 for performing vacuum exhaust. This evacuation system 19 is provided with an electromagnetic valve 17 for turning ON / OFF the evacuation and a vacuum source 18, and the evacuation system 19 communicates with the suction sleeve 11 to which the suction pad 12 is attached. .

  Further, as shown in FIG. 2, the supply transfer 3 includes a mechanism that can move the suction head 51 in the X, Y, and Z directions of FIG. It can be transported in the X, Y or Z direction.

  Further, the test handler 50 includes a contact supply transfer 4, a contact discharge transfer 6, and a storage transfer 7 having the same mechanism as the supply transfer 3 apart from the supply transfer 3, and performs a test (measurement) of the IC 13. An IC measurement unit 5 is provided.

  The test handler 50 also includes empty tray stores 1 and 10 for storing empty trays, a non-defective IC storage 8 for storing non-defective ICs based on the results of tests performed by the IC measuring unit 5, and a defective product for storing defective ICs. An IC storage 9 is provided.

  Next, the structure of the IC 13 that is a semiconductor device to be tested (measured) in the test handler 50 will be described.

  The IC 13 is a semiconductor device (semiconductor package) assembled in a later process, and as shown in FIG. 2, the semiconductor chip 20 mounted on the tab 21 via a die bond material, and the inner lead of the semiconductor chip 20 and the lead 14 A plurality of wires 22 that electrically connect the portions, and a sealing body 23 that seals the semiconductor chip 20 and the plurality of wires 22 with a resin. The suction pad 12 is a flat surface that can be vacuum-sucked. The outer lead portion exposed from the sealing body 23 of each of the plurality of leads 14 is bent into a gull wing shape.

  That is, the IC 13 is a semiconductor device such as QFP (Quad Flat Package) or SOP (Small Outline Package), for example, but the electrical connection method between the semiconductor chip 20 and the leads 14 and the outer lead portion of each lead 14 The shape and the like are not particularly limited, and may be a semiconductor device other than QFP or SOP.

  Next, the structure of the suction pad 12 shown in FIGS. 3 and 4 provided in the suction head portion 51 of the test handler 50 will be described.

  3 is an external perspective view showing an example of the structure of the suction pad shown in FIG. 2, FIG. 4 is a cross-sectional view showing an example of the structure of the suction pad shown in FIG. 3, and FIG. 5 is a view of the sleeve of the suction pad shown in FIG. It is sectional drawing which shows an example of the structure after coupling | bonding. 6 is a cross-sectional view showing an example of the relationship between the sizes of the characteristic portions of the suction pad shown in FIG. 3, and FIG. 7 is a cross-sectional view showing an example of the relationship between the sizes of the characteristic portions of the suction pad shown in FIG. FIG. 8 is a cross-sectional view showing an example of the relationship between the sizes of the characteristic portions of the suction pad shown in FIG. 3, and FIG. 9 is a partial cross-sectional view showing an example of the structure of the suction pad shown in FIG.

  The suction pad 12 of the first embodiment forms a first hollow portion 12d that is a hollow portion communicating with the vacuum exhaust system 19 of FIG. 2 and has a cylindrical suction portion 12a that extends along the vacuum exhaust direction F. The disk-shaped support part 12c extending in the circumferential direction and intersecting the suction part 12a and further supporting the suction part 12a, the sleeve connecting part 12e connected to the suction sleeve 11, and the suction part 12a And a connecting portion 12f for connecting the sleeve connecting portion 12e. That is, the first hollow portion 12d is a space portion surrounded by the adsorption portion 12a and the support portion 12c. Further, the connecting portion 12f is joined to the support portion 12c and the sleeve connecting portion 12e, and has a cylindrical structure extending along the evacuation direction F in FIG. 4 in a region opposite to the suction portion 12a of the support portion 12c. ing.

  Therefore, as shown in FIG. 3, the adsorbing portion 12a, the connecting portion 12f, and the sleeve connecting portion 12e are each formed in a cylindrical shape, and the first hollow portion 12d and the second hollow portion are respectively formed inside each as shown in FIG. A hollow portion 12g and a third hollow portion 12h are formed, and the first hollow portion 12d, the second hollow portion 12g, and the third hollow portion 12h communicate with each other. The diameter of the outer periphery of the cylindrical shape of the suction portion 12a and the sleeve connection portion 12e is substantially the same, and the diameter of the outer periphery of the cylindrical shape of the connecting portion 12f disposed therebetween is larger than that of the suction portion 12a and the sleeve connection portion 12e. Since it is small, a load absorbing groove portion 12i serving as a groove-like space portion is formed outside the connecting portion 12f in a region sandwiched between the suction portion 12a and the sleeve connecting portion 12e.

  The tip of the cylindrical suction portion 12a is a circular IC contact surface 12b that presses against the surface of the IC 13 when the IC 13 is sucked, and when vacuum exhaust is performed in the vacuum exhaust direction F, The first hollow portion 12d covered with the suction portion 12a and the surface of the sealing body 23 of the IC 13 is evacuated and the IC 13 is vacuum-sucked.

  As shown in FIG. 5, the third hollow portion 12h inside the cylindrical sleeve connecting portion 12e is a space into which the suction sleeve 11 is fitted, and the sleeve hollow portion 11a inside the suction sleeve 11 is the suction portion 12a. The first hollow portion 12d and the second hollow portion 12g communicate with each other. As shown in FIG. 2, an evacuation system 19 is connected to the suction sleeve 11.

  Further, in the suction pad 12 of the first embodiment, as shown in FIG. 6, in the suction portion 12a and the support portion 12c, the thickness X of the support portion 12c is formed thinner than the thickness Y of the suction portion 12a. The support part 12c is formed to be bendable as shown in FIG. That is, as shown in FIG. 6, the thickness X of the support portion 12c and the thickness Y of the suction portion 12a have a relationship of X <Y. That is, the thickness X of the support portion 12c is formed to be very thin and has a shape with low rigidity. On the other hand, the thickness Y of the adsorption portion 12a is not deformed even when a load is applied by vacuum exhaust. The thickness has high rigidity.

  The suction pad 12 is made of conductive rubber, for example, silicone rubber mixed with conductive particles (hereinafter, also simply referred to as conductive silicone rubber), which makes it difficult to be charged by electrostatic discharge. ing.

  As described above, the suction pad 12 is formed of conductive silicone rubber, and the thickness of the support portion 12c is thin and the rigidity is low, so that the first hollow portion is evacuated as shown in FIG. When the vacuum atmosphere is applied to 12d, the support portion 12c has a much lower rigidity than the sealing body 23 of the IC 13 and the suction portion 12a, so that the connecting portion 12f approaches the sealing body 23 of the IC 13. 12c bends. In other words, the support portion 12c is bent so that the suction portion 12a is disposed in the load absorbing groove portion 12i.

  At this time, the distance between the load absorbing groove upper surface 12j, which is the side surface of the upper sleeve connecting portion 12e of the load absorbing groove portion 12i, and the load absorbing groove lower surface 12k, which is the side surface of the lower absorbing portion 12a, is 0. The support portion 12c is bent so that the sleeve connection portion 12e and the suction portion 12a are in close contact with each other. That is, by bending the support portion 12c and bringing the suction portion 12a and the sleeve connection portion 12e into close contact with each other, the suction portion 12a having a high rigidity and the sleeve connection portion 12e having a high rigidity are integrated. A single rigid body can withstand the load of evacuation and can hold the IC 13 by suction.

  Here, during vacuum evacuation, the adsorbing part 12a is much thicker and more rigid than the support part 12c, so that it stays in close contact with the sealing body 23 of the IC 13 and does not slide on the surface of the sealing body 23. . Thereby, friction does not arise between the adsorption | suction part 12a and the sealing body 23, and it does not lead to electrostatic discharge. Therefore, it is possible to reduce or prevent charging from occurring in the sealing body 23.

  Furthermore, by adhering the sleeve connecting portion 12e and the adsorbing portion 12a when the IC 13 is adsorbed, the adsorbing portion 12a and the sleeve connecting portion 12e can be integrated to stabilize the shape of the adsorbing portion 12a. The posture can be stabilized.

  In the suction pad 12, as shown in FIG. 7, the length A of the connecting portion 12f in the vacuum exhaust direction F is the length of the first hollow portion 12d in the vacuum exhaust direction F which is the hollow portion of the suction portion 12a. It is shorter than the depth (depth) B. That is, the length A of the connecting portion 12f <the depth B of the first hollow portion 12d (A <B).

  Thereby, when the IC 13 is sucked by evacuation, it is possible to prevent the suction top 12m from coming into contact with the surface of the sealing body 23 of the IC 13 as shown in FIG.

  In the suction pad 12, as shown in FIG. 8, the size (diameter) C of the connecting portion 12f in the outer peripheral direction is the size in the inner peripheral direction of the suction portion 12a (the diameter of the first hollow portion 12d). It is smaller than D. That is, the diameter C of the outer peripheral portion of the connecting portion 12f is smaller than the diameter D of the first hollow portion 12d (C <D).

  Thereby, when the IC 13 is sucked by vacuum evacuation, the suction top 12m can be easily bent as shown in FIG. 11 (the support portion 12c including the suction top 12m can be easily deformed).

  Therefore, the shape of the suction pad 12 is such that the length A of the connecting portion 12f <the depth B of the first hollow portion 12d, and the diameter C of the outer peripheral portion of the connecting portion 12f <the diameter D of the first hollow portion 12d. Thus, when the IC 13 is attracted, the sleeve connecting portion 12e and the attracting portion 12a can be reliably brought into close contact with each other as shown in FIG. 9, and the IC 13 can further stabilize the attracting posture.

  Next, a method for transporting the semiconductor device according to the first embodiment shown in FIGS. 10 to 12 will be described.

  10 is a partial cross-sectional view showing a structure when the semiconductor device is contacted and conveyed by the suction pad shown in FIG. 3, and FIG. 11 shows a structure when the semiconductor device is sucked by the suction pad shown in FIG. FIG. 12 is a partial sectional view showing the structure when the semiconductor device is sucked and conveyed by the suction pad shown in FIG.

  In the first embodiment, a case will be described in which an IC 13 which is a semiconductor device mounted on a conductive tray is sucked and held by a suction pad 12 and conveyed.

  First, as shown in FIG. 10, a cylindrical suction portion 12a that forms a first hollow portion 12d that is a hollow portion communicating with the vacuum exhaust system 19 and extends along the vacuum exhaust direction F, and a suction portion 12a In the test handler 50 which is the semiconductor manufacturing apparatus shown in FIG. 1 provided with the suction pad 12 extending in the intersecting direction and having the support portion 12c for supporting the suction portion 12a, the vacuum exhaust system 19 performs vacuum exhaust. Then, the IC 13 placed on the conductive tray 15 is suction-held by the suction portion 12a of the suction pad 12.

  At this time, the suction pad 12 is formed of conductive silicone rubber, and the thickness X of the support portion 12c in the suction pad 12 is formed thinner than the thickness Y of the suction portion 12a as shown in FIG. (X <Y). Further, as shown in FIG. 7, the length A of the connecting portion 12f <the depth B of the first hollow portion 12d (A <B), and the diameter C of the outer peripheral portion of the connecting portion 12f as shown in FIG. <Diameter D of the first hollow portion 12d (C <D).

  First, as shown in FIG. 10, the electromagnetic valve 17 of the evacuation system 19 is opened to start evacuation from the vacuum source 18 via the suction sleeve 11, and the suction pad 12 is lowered (E direction) to make the IC 13 The suction part 12 a of the suction pad 12 is pressed against the surface of the sealing body 23.

  Thereafter, the negative pressure from the vacuum source 18 causes the first hollow portion 12d of the suction portion 12a to be in a vacuum atmosphere, and the IC 13 can be sucked and held as shown in FIG. At that time, since the suction pad 12 is formed of conductive silicone rubber, and the support portion 12c is thinner and less rigid than the suction portion 12a, a load in the vacuum exhaust direction F is applied to the suction pad 12. The support portion 12c bends so that the connecting portion 12f approaches the sealing body 23 of the IC 13. In other words, the support portion 12c is bent so that the suction portion 12a is disposed in the load absorption groove portion 12i shown in FIG.

  That is, the load applied to the suction pad 12 along the evacuation direction F (the load applied in the vertical direction) is absorbed by the load absorption groove 12i.

  Further, the support portion 12c is bent so that the distance between the load absorbing groove upper surface 12j and the load absorbing groove lower surface 12k of the suction pad 12 is 0 mm (the sleeve connecting portion 12e and the suction portion 12a are in close contact). That is, by bending the support portion 12c and bringing the suction portion 12a and the sleeve connection portion 12e into close contact with each other, the suction portion 12a having the same rigidity as the suction portion 12a having the higher rigidity is integrated with the suction pad 12. A single rigid body can withstand a load in the evacuation direction F, and the IC 13 can be held by suction.

  Here, the suction portion 12a is much thicker and more rigid than the support portion 12c, and the load absorbing groove portion 12i absorbs the load applied to the suction pad 12 along the vacuum exhaust direction F during vacuum exhaust. The adsorbing portion 12a is kept in close contact with the sealing body 23 of the IC 13 and does not slide on the surface of the sealing body 23.

  As a result, little friction occurs between the adsorbing portion 12a and the sealing body 23, and electrostatic discharge does not occur. Therefore, it is possible to reduce or prevent charging from occurring in the sealing body 23.

  In this state, as shown in FIG. 12, the IC 13 is sucked and held by the suction pad 12 and conveyed to a predetermined position.

  The shape of the suction pad 12 is such that the length A of the connecting portion 12f <the depth B of the first hollow portion 12d, and the diameter C of the outer peripheral portion of the connecting portion 12f <the diameter D of the first hollow portion 12d. Accordingly, it is possible to prevent the suction top plate 12m of the support portion 12c from coming into contact with the surface of the sealing body 23 of the IC 13 during the suction of the IC 13 and to easily deform the support portion 12c including the suction top plate 12m. it can.

  As a result, the sleeve connection portion 12e and the suction portion 12a can be more closely adhered to each other, and the suction posture of the IC 13 can be further stabilized.

  According to the semiconductor manufacturing apparatus (test handler 50) and the semiconductor device transport method of the first embodiment, the thickness X of the support portion 12c in the suction pad 12 is thinner than the thickness Y of the suction portion 12a and can be bent. By being formed, when the IC 13 is vacuum-sucked by the suction pad 12, the support portion 12 c is bent to suppress the movement (slip) of the suction portion 12 a in contact with the IC 13, thereby suppressing the sealing body 23 of the IC 13. Friction that occurs between the surface and the adsorption portion 12a can be reduced.

  As a result, charging on the surface of the sealing body 23 of the IC 13 can be reduced, and even if the lead 14 of the IC 13 touches a metal member such as the measurement contact pin 16 shown in FIG. The amount of discharge can be reduced.

  As a result, destruction of the IC 13 due to electrostatic discharge can be reduced.

  In addition, since charging on the surface of the sealing body 23 of the IC 13 during vacuum suction by the suction pad 12 can be reduced, it is possible to reduce misalignment or suction error of the IC 13 during vacuum suction.

  Thereby, the adsorption | suction attitude | position of IC13 can be stabilized.

  Further, since the suction posture at the time of suction holding of the IC 13 can be stabilized, lead bending due to a positional shift at the transport destination of the IC 13 can be reduced. That is, the deformation of the lead 14 in the suction conveyance of the IC 13 can be suppressed.

  Next, a modification of the first embodiment will be described. FIG. 13 is an enlarged partial sectional view showing the structure of the first modification of the suction pad according to the first embodiment of the present invention, and FIG. 14 is an enlarged view showing the structure of the second modification of the suction pad according to the first embodiment of the present invention. FIG. 15 is an enlarged partial sectional view showing a detailed structure of the suction pad shown in FIG.

  In the first modification shown in FIG. 13, the tip of the suction pad 12 has a two-layer structure with different hardness. That is, the tip of the suction portion 12a of the suction pad 12 is formed in a two-layer structure including the first tip portion 12n and the second tip portion 12p with respect to the evacuation direction F, and the tip side of the tip side having the IC contact surface 12b is formed. The hardness of the first tip portion 12n is higher than the hardness of the second tip portion 12p on the base end side.

  At that time, the first tip portion 12n on the tip side is preferably formed of a material having a small mechanical resistance value. Both the first tip portion 12n and the second tip portion 12p are made of, for example, conductive silicone rubber, and in this case, the hardness of the first tip portion 12n on the tip side is, for example, 75 ° ± 5 °. On the other hand, the hardness of the second distal end portion 12p on the proximal end side is, for example, 40 ° ± 5 °. However, the hardness of the conductive silicone rubber is not limited to these.

  Further, the IC contact surface 12b of the first tip portion 12n on the distal end side is preferably formed in a mirror surface. Therefore, by forming the IC contact surface 12b in a mirror surface with higher hardness, the IC 13 The coefficient of friction between the suction portion 12a and the sealing body 23 of the IC 13 when holding the suction can be further reduced, and the amount of charge on the IC 13 can be further reduced.

  Next, in the second modification shown in FIGS. 14 and 15, the tip of the suction portion 12a of the suction pad 12 is formed in a wedge shape. At that time, since it has a wedge-shaped tip shape, the tip of the suction portion 12a is formed in a tapered shape toward the tip, and further formed from the tip end portion 12q of the tip toward the inside of the suction portion 12a. A first angle (θ1) formed by a virtual surface 24 perpendicular to the evacuation direction F of the first taper surface 12r is a second taper surface 12s formed from the protruding end portion 12q of the tip toward the outside of the suction portion 12a. The second angle (θ2) formed with the virtual plane 24 is in a relationship of θ1 ≦ θ2.

  That is, the first angle (θ1) formed by the virtual surface 24 of the first taper surface 12r toward the inner side in the circumferential direction of the wedge-shaped tip is the virtual angle of the second taper surface 12s toward the outer side in the circumferential direction of the tip. It is smaller than the second angle (θ2) formed with the surface 24 and has a relationship of θ1 (inner side) ≦ θ2 (foot side). Here, the virtual surface 24 is a horizontal plane here. More preferably, θ1 (inner side) <θ2 (outer side).

  Thus, by making the shape of the tip of the suction portion 12a a wedge shape, the contact area between the suction portion 12a and the IC 13 is reduced to reduce the amount of friction, thereby reducing the amount of charge on the IC 13. be able to.

  Further, by setting the angle (θ1) of the first tapered surface 12r inside the wedge shape to the angle (θ2) of the second tapered surface 12s outside the wedge shape, the inner side even when the adsorbing portion 12a is inclined at the time of vacuum evacuation. It is easy to incline and can maintain strong adsorption.

  Thereby, both low charging and strong adsorption can be realized in the vacuum adsorption of the IC 13.

  The other effects obtained by the first modification and the second modification of the first embodiment are the same as the effects obtained by the semiconductor manufacturing apparatus and the semiconductor device transport method shown in FIGS. Therefore, the duplicate description is omitted.

(Embodiment 2)
16 is an external perspective view showing an example of the structure of the suction pad according to Embodiment 2 of the present invention, FIG. 17 is a sectional view showing an example of the structure of the suction pad shown in FIG. 16, and FIG. 18 is a suction pad shown in FIG. It is sectional drawing which shows an example of the structure after the coupling | bonding with the sleeve. 19 is a cross-sectional view showing an example of the relationship between the sizes of the feature portions of the suction pad shown in FIG. 16, and FIG. 20 is a cross-sectional view showing an example of the relationship between the sizes of the feature portions of the suction pad shown in FIG. 21 is a cross-sectional view showing an example of the relationship between the sizes of the characteristic portions of the suction pad shown in FIG. 16, and FIG. 22 is a partial cross-sectional view showing an example of the structure of the suction pad shown in FIG.

  In the second embodiment, a description will be given of a suction pad 26 for a small IC that can hold a small IC 25, which is a small semiconductor device, by vacuum suction.

  The suction pad 26 shown in FIG. 16 and FIG. 17 is configured such that the small IC 25 can be sucked by reducing the size of the suction portion 12a, and the basic structure thereof is the same as that of the suction pad 12 of the first embodiment. It is substantially the same. The suction pad 26 includes a cylindrical suction portion 12a that forms a first hollow portion 12d that is a hollow portion that communicates with the vacuum exhaust system 19 (see FIG. 10), and that extends along the vacuum exhaust direction F. A disk-like support portion 12c extending in the circumferential direction and intersecting the portion 12a and further supporting the suction portion 12a, a sleeve connecting portion 12e connected to the suction sleeve 11 shown in FIG. The connecting portion 12f connects the portion 12a and the sleeve connecting portion 12e.

  Here, the first hollow portion 12d is a space portion inside the cylindrical suction portion 12a. Further, the connecting portion 12f is of a cylindrical structure that is joined to the support portion 12c and the sleeve connecting portion 12e and extends along the evacuation direction F in a region opposite to the suction portion 12a of the support portion 12c.

  Therefore, as shown in FIG. 16, the adsorbing portion 12a, the connecting portion 12f, and the sleeve connecting portion 12e are each formed in a cylindrical shape, and the first hollow portion 12d and the second hollow portion are respectively formed in the inside as shown in FIG. A hollow portion 12g and a third hollow portion 12h are formed, and the first hollow portion 12d, the second hollow portion 12g, and the third hollow portion 12h communicate with each other.

  In the suction pad 26, the sleeve connecting portion 12e and the connecting portion 12f have the same outer diameter, and the outer diameter of the sucking portion 12a is smaller than the outer diameter of the connecting portion 12f.

  Further, in the suction pad 26, the second hollow portion 12g, which is a space inside the cylindrical connecting portion 12f, becomes a load absorption groove portion 12i that absorbs a load in the vacuum exhaust direction F (vertical direction) during suction. ing.

  The tip of the small cylindrical suction portion 12a is a circular IC contact surface 12b that presses against the surface of the small IC 25 when the small IC 25 is sucked, and the vacuum exhaust is performed in the vacuum exhaust direction F. At this time, the first hollow portion 12d inside the suction portion 12a is evacuated to vacuum-suck the small IC 25.

  As shown in FIG. 18, the third hollow portion 12h inside the cylindrical sleeve connecting portion 12e is a space into which the suction sleeve 11 is fitted, and the sleeve hollow portion 11a inside the suction sleeve 11 is the suction portion 12a. The first hollow portion 12d and the second hollow portion 12g communicate with each other. Similar to the structure shown in FIG. 10, an evacuation system 19 is connected to the suction sleeve 11.

  Also, in the suction pad 26 of the second embodiment, as in the suction pad 12 of the first embodiment, as shown in FIG. 19, the thickness X of the support portion 12c in the suction portion 12a and the support portion 12c is The suction portion 12a is formed thinner than the wall thickness Y, and the support portion 12c is formed to be bendable as shown in FIG. That is, as shown in FIG. 19, the thickness X of the support portion 12c and the thickness Y of the suction portion 12a have a relationship of X <Y. That is, the thickness X of the support portion 12c is formed to be very thin and has a shape with low rigidity. On the other hand, the thickness Y of the adsorption portion 12a is not deformed even when a load is applied by vacuum exhaust. The thickness has high rigidity.

  The suction pad 26 is formed of conductive rubber, for example, silicone rubber mixed with conductive particles (hereinafter, also simply referred to as conductive silicone rubber), which makes it difficult to be charged by electrostatic discharge. ing.

  As described above, the suction pad 26 is formed of conductive silicone rubber, and the thickness of the support portion 12c is thin and the rigidity is low, so that the first hollow portion is evacuated as shown in FIG. When the vacuum atmosphere is used for 12d, the support 12c is much lower in rigidity than the sealing body 23 and the suction part 12a of the small IC 25, so that the suction part 12a is closer to the upper sleeve connection part 12e. The part 12c is bent. In other words, the support portion 12c is bent so that the suction portion 12a is disposed in the load absorbing groove portion 12i.

  At that time, the distance between the load absorbing groove upper surface 12j on the upper surface of the load absorbing groove portion 12i, which is the second hollow portion 12g, and the load absorbing groove lower surface 12k on the lower surface of the load absorbing groove portion 12i becomes zero (sleeve connecting portion 12e and suction). The support portion 12c is bent so that the portion 12a is in close contact with the portion 12a. That is, by bending the support portion 12c and bringing the suction portion 12a and the sleeve connection portion 12e into close contact with each other, the suction connection portion 26a is integrated with the sleeve connection portion 12e having the same high rigidity as the suction portion 12a having the higher rigidity. One rigid body can withstand the load of vacuum exhaust, and the small IC 25 can be held by suction.

  Here, at the time of vacuum evacuation, the adsorbing portion 12a is much thicker and higher in rigidity than the support portion 12c. Disappear. Thereby, friction does not arise between the adsorption | suction part 12a and the sealing body 23, and it does not lead to electrostatic discharge. Therefore, it is possible to reduce or prevent charging from occurring in the sealing body 23.

  Further, when the small IC 25 is attracted, the sleeve connecting portion 12e and the attracting portion 12a are brought into close contact with each other, whereby the attracting portion 12a and the sleeve connecting portion 12e can be integrated to stabilize the shape of the attracting portion 12a. It is possible to stabilize the suction posture.

  Further, in the suction pad 26, as shown in FIG. 20, the length A of the connecting portion 12f in the vacuum exhaust direction F is the length in the vacuum exhaust direction F of the first hollow portion 12d which is the hollow portion of the suction portion 12a. It is shorter than the depth (depth) B. That is, the length A of the connecting portion 12f <the depth B of the first hollow portion 12d (A <B).

  As a result, when the small IC 25 is sucked by vacuum evacuation, the load absorbing groove upper surface 12j and the load absorbing groove lower surface 12k are in close contact with each other as shown in FIG.

  Further, in the suction pad 26, as shown in FIG. 21, the size (diameter) C in the outer peripheral direction of the suction portion 12a is the size in the inner peripheral direction of the connecting portion 12f (diameter of the second hollow portion 12g) D. It is formed smaller. That is, the diameter C of the outer peripheral portion of the suction portion 12a is smaller than the diameter D of the second hollow portion 12g (C <D).

  Thereby, when the small IC 25 is sucked by vacuum evacuation, the suction top plate 12m as the support portion 12c can be easily bent.

  Therefore, the shape of the suction pad 26 is such that the length A of the connecting portion 12f <the depth B of the first hollow portion 12d, and the diameter C of the outer peripheral portion of the suction portion 12a <the diameter D of the second hollow portion 12g. As a result, when the small IC 25 is attracted, the sleeve connecting portion 12e and the attracting portion 12a can be reliably brought into close contact with each other as shown in FIG. 22, and the adsorption posture of the small IC 25 can be further stabilized.

  Next, a method for transporting the semiconductor device according to the second embodiment shown in FIGS. 23 to 25 will be described.

  FIG. 23 is a partial cross-sectional view showing the structure at the time of pad contact when the semiconductor device is sucked and conveyed by the suction pad shown in FIG. 16, and FIG. 24 shows the structure when the semiconductor device is sucked by the suction pad shown in FIG. FIG. 25 is a partial sectional view showing the structure when the semiconductor device is sucked and conveyed by the suction pad shown in FIG.

  Also in the method for transporting a semiconductor device according to the second embodiment, a case will be described in which a small IC 25, which is a small semiconductor device placed on a conductive tray, is sucked and held by a suction pad 26.

  First, as shown in FIG. 23, a cylindrical suction portion 12a having a first hollow portion 12d, which is a hollow portion communicating with the vacuum exhaust system 19, and extending along the vacuum exhaust direction F, intersects the suction portion 12a. In the test handler 50 shown in FIG. 1 provided with a suction pad 26 having a support portion 12c that supports the suction portion 12a, the suction pad 26 is sucked by evacuation by the vacuum evacuation system 19. The small IC 25 placed on the conductive tray 15 is sucked and held by the portion 12a.

  At that time, the suction pad 26 is made of conductive silicone rubber, and the thickness X of the support portion 12c in the suction pad 26 is made thinner than the thickness Y of the suction portion 12a as shown in FIG. (X <Y). Further, the length A of the connecting portion 12f <the depth B of the first hollow portion 12d as shown in FIG. 20 (A <B), and the diameter C of the outer peripheral portion of the suction portion 12a as shown in FIG. <The diameter D of the second hollow portion 12g (C <D).

  First, as shown in FIG. 23, the electromagnetic valve 17 of the evacuation system 19 is opened to start evacuation from the vacuum source 18 via the suction sleeve 11, and the suction pad 26 is lowered (E direction) to make a small IC 25. The suction part 12 a of the suction pad 26 is pressed against the surface of the sealing body 23.

  Thereafter, the negative pressure from the vacuum source 18 causes the first hollow portion 12d of the suction portion 12a to be in a vacuum atmosphere, and the small IC 25 is suction-held as shown in FIG. At that time, since the suction pad 26 is formed of conductive silicone rubber, and the support portion 12c is thinner and less rigid than the suction portion 12a, a load in the vacuum exhaust direction F is applied to the suction pad 26. The support portion 12c bends so that the suction portion 12a approaches the sleeve connection portion 12e. In other words, the support portion 12c is bent so that the suction portion 12a is disposed in the load absorption groove portion 12i shown in FIG.

  That is, the load applied to the suction pad 26 along the evacuation direction F (the load applied in the vertical direction) is absorbed by the second hollow portion 12g which is the load absorption groove portion 12i.

  Further, as shown in FIG. 24, the support portion 12c is arranged so that the distance between the load absorbing groove upper surface 12j and the load absorbing groove lower surface 12k of the suction pad 26 becomes zero (the sleeve connecting portion 12e and the suction portion 12a are in close contact). Bend. In other words, the suction portion 12a and the sleeve connection portion 12e are integrated by bending the support portion 12c and bringing the suction portion 12a and the sleeve connection portion 12e into close contact with each other, so that the suction pad 26 becomes one rigid body. It can withstand the load in the evacuation direction F and can hold the small IC 25 by suction.

  Here, the suction portion 12a is much thicker and more rigid than the support portion 12c, and the load absorbing groove portion 12i absorbs the load applied along the vacuum exhaust direction F with respect to the suction pad 26 during vacuum exhaust. The adsorbing portion 12a maintains a state of being in close contact with the sealing body 23 of the small IC 25 and does not slide on the surface of the sealing body 23.

  As a result, little friction occurs between the adsorbing portion 12a and the sealing body 23, and electrostatic discharge does not occur. Therefore, it is possible to reduce or prevent charging from occurring in the sealing body 23.

  In this state, as shown in FIG. 25, the small IC 25 is sucked and held by the suction pad 26 and conveyed to a predetermined position.

  The shape of the suction pad 26 is such that the length A of the connecting portion 12f <the depth B of the first hollow portion 12d, and the diameter C of the outer peripheral portion of the suction portion 12a <the diameter D of the second hollow portion 12g. Thus, when the small IC 25 is sucked, the support portion 12c, which is the suction top 12m shown in FIG. 23, can be easily deformed.

  As a result, the sleeve connecting portion 12e and the suction portion 12a can be more closely adhered to each other, and the suction posture of the small IC 25 can be further stabilized.

  According to the semiconductor manufacturing apparatus and the semiconductor device transport method of the second embodiment, the thickness X of the support portion 12c in the suction pad 26 is thinner than the thickness Y of the suction portion 12a and bendable. Thus, when the small IC 25 is vacuum-sucked by the suction pad 26, the support portion 12c is bent, so that the movement (slip) of the suction portion 12a in contact with the small IC 25 is suppressed and the surface of the sealing body 23 of the small IC 25 is Friction that occurs with the suction portion 12a can be reduced.

  Thereby, the charge on the surface of the sealing body 23 of the small IC 25 can be reduced.

  The other effects obtained by the semiconductor manufacturing apparatus and semiconductor device transport method of the second embodiment are the same as the effects obtained by the semiconductor manufacturing apparatus and semiconductor device transport method of the first embodiment, and therefore overlap. Description is omitted.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiments of the invention. However, the present invention is not limited to the embodiments of the invention, and various modifications can be made without departing from the scope of the invention. It goes without saying that it is possible.

  For example, in the first and second embodiments, the case where the suction portion 12a of the suction pads 12 and 26 is cylindrical and the IC contact surface 12b is circular has been described, but each of FIGS. 26, 27, and 28 is illustrated. As shown in the modification, the suction portion 12a may be formed in a cylindrical shape such that the IC contact surface 12b has another shape.

  In another first modification shown in FIG. 26, the suction portion 12a has an elliptical cylindrical shape, and the IC contact surface 12b has an elliptical shape. In another second modification shown in FIG. 27, the suction portion 12a has a rectangular cylindrical shape, and the IC contact surface 12b has a rectangular shape. Furthermore, in another third modification shown in FIG. 28, the suction portion 12a has a polygonal cylindrical shape, and the IC contact surface 12b has a polygonal shape.

  As shown in each of these modifications, if the suction part 12a has a cylindrical shape with a hollow part inside, the outer peripheral shape is circular, elliptical, rectangular or polygonal. There is no particular limitation.

  In the first and second embodiments, the case where the semiconductor device to be vacuum-sucked is a QFP or SOP type semiconductor device has been described. The semiconductor device is not limited and may be another semiconductor device.

  Further, in the first and second embodiments, the case where the semiconductor manufacturing apparatus is the test handler 50 has been described. However, if the semiconductor manufacturing apparatus has a mechanism capable of sucking and holding the semiconductor device by vacuum suction, The manufacturing apparatus is not limited to the handler, and may be another manufacturing apparatus.

  The present invention is suitable for an electronic device transport technique using vacuum suction.

DESCRIPTION OF SYMBOLS 1 Empty tray storage 2 Unmeasured IC storage 3 Supply transfer 4 Contact supply transfer 5 IC measurement part 6 Contact discharge transfer 7 Storage transfer 8 Non-defective IC storage 9 Defective IC storage 10 Empty tray storage 11 Suction sleeve 11a Sleeve hollow part 12 Suction pad 12a Adsorption part 12b IC contact surface 12c Support part 12d First hollow part 12e Sleeve connection part 12f Connection part 12g Second hollow part 12h Third hollow part 12i Load absorption groove part 12j Load absorption groove upper surface 12k Load absorption groove lower surface 12m Adsorption top plate 12n First tip portion 12p Second tip portion 12q Projection end portion 12r First taper surface 12s Second taper surface 13 IC (semiconductor device)
14 Lead 15 Tray 16 Measurement Contact Pin 17 Solenoid Valve 18 Vacuum Source 19 Vacuum Exhaust System 20 Semiconductor Chip 21 Tab 22 Wire 23 Sealing Body 24 Virtual Surface 25 Small IC (Semiconductor Device)
26 Suction Pad 30 Suction Pad 30a Suction Part 30b IC Contact Surface 50 Test Handler (Semiconductor Manufacturing Equipment)
51 Suction Head 100 Test Handler 101 Suction Head

Claims (14)

A semiconductor manufacturing apparatus that holds and transports a semiconductor device by suction,
A cylindrical suction portion that forms a hollow portion that communicates with the vacuum exhaust system and extends along the vacuum exhaust direction, and a support portion that extends in a direction intersecting the suction portion and supports the suction portion. Having a suction pad;
A suction head unit comprising the suction pad, and vacuum-sucking and transporting the semiconductor device via the suction pad;
Have
The thickness of the said support part in the said suction pad is formed thinner than the thickness of the said suction part, and the said support part is formed so that bending is possible.   2. The semiconductor manufacturing apparatus according to claim 1, wherein the suction pad is connected to the support portion and has a cylindrical connection portion that extends along the evacuation direction in a region opposite to the suction portion of the support portion. The semiconductor manufacturing apparatus is characterized in that a length of the connecting portion in the evacuation direction is shorter than a length of the hollow portion of the adsorption portion in the evacuation direction.   3. The semiconductor manufacturing apparatus according to claim 2, wherein the suction pad is made of conductive rubber.   2. The semiconductor manufacturing apparatus according to claim 1, wherein the suction pad is connected to the support portion and has a cylindrical connection portion that extends along the evacuation direction in a region opposite to the suction portion of the support portion. Is formed, and the size of the connecting portion in the outer peripheral direction is smaller than the size of the suction portion in the inner peripheral direction.   2. The semiconductor manufacturing apparatus according to claim 1, wherein a size of the suction portion in an outer peripheral direction is such that the suction pad is bonded to the support portion and the vacuum is provided in a region opposite to the suction portion of the support portion. A semiconductor manufacturing apparatus characterized in that a cylindrical connecting portion extending along the exhaust direction is formed and is smaller in size than the inner peripheral direction of the connecting portion.   2. The semiconductor manufacturing apparatus according to claim 1, wherein a tip of the suction portion is formed in a two-layer structure including a first tip and a second tip with respect to the evacuation direction, and the first tip on the tip side is formed. Is higher than the hardness of the second tip portion on the base end side.   2. The semiconductor manufacturing apparatus according to claim 1, wherein a tip of the suction portion is formed in a tapered shape toward the tip, and a first taper surface formed from a protruding end portion of the tip toward the inside of the suction portion. A first angle (θ1) formed with a virtual surface orthogonal to the evacuation direction is a second angle formed with the virtual surface of a second tapered surface formed from the protruding end portion of the tip toward the outside of the suction portion. A semiconductor manufacturing apparatus having a relationship of an angle (θ2) and θ1 ≦ θ2. A method of transporting a semiconductor device for sucking and holding a semiconductor device,
(A) A hollow portion communicating with the vacuum exhaust system and forming a cylindrical suction portion extending along the vacuum exhaust direction, and a support extending in a direction intersecting the suction portion and supporting the suction portion A semiconductor manufacturing apparatus including a suction pad having a portion, and performing vacuum evacuation by the vacuum evacuation system and sucking and holding the semiconductor device by the suction portion of the suction pad;
(B) In the semiconductor manufacturing apparatus, the step of transporting the semiconductor device while being sucked and held by the suction pad;
Have
The thickness of the support portion in the suction pad is formed thinner than the thickness of the suction portion, and the support portion is bent when the vacuum exhaust system is evacuated in the step (a). A method of transporting a semiconductor device, characterized in that the semiconductor device is vacuum-sucked.   9. The method of transporting a semiconductor device according to claim 8, wherein the suction pad has a cylindrical shape that is joined to the support portion and extends along the vacuum exhaust direction in a region opposite to the suction portion of the support portion. A method for transporting a semiconductor device, wherein a connecting portion is formed, and a length of the connecting portion in the vacuum exhaust direction is shorter than a length of the hollow portion of the suction portion in the vacuum exhaust direction.   10. The method for transporting a semiconductor device according to claim 9, wherein the suction pad is made of conductive rubber.   9. The method of transporting a semiconductor device according to claim 8, wherein the suction pad has a cylindrical shape that is joined to the support portion and extends along the vacuum exhaust direction in a region opposite to the suction portion of the support portion. A method for transporting a semiconductor device, wherein a connecting portion is formed, and the size of the connecting portion in the outer peripheral direction is smaller than the size of the suction portion in the inner peripheral direction.   9. The method of transporting a semiconductor device according to claim 8, wherein a size of the suction part in an outer peripheral direction is bonded to the support pad on the suction pad and in a region opposite to the suction part of the support part. A method of transporting a semiconductor device, characterized in that a cylindrical connecting portion extending along the evacuation direction is formed and is smaller in size than an inner peripheral direction of the connecting portion.   9. The method for transporting a semiconductor device according to claim 8, wherein a tip of the adsorption part is formed in a two-layer structure including a first tip part and a second tip part with respect to the vacuum exhaust direction, and the first part on the tip side is formed. A method for transporting a semiconductor device, wherein the hardness of the distal end portion is higher than the hardness of the second distal end portion on the proximal end side.   9. The method of transporting a semiconductor device according to claim 8, wherein a tip of the suction portion is formed in a tapered shape toward the tip, and is formed from a protruding end portion of the tip toward the inside of the suction portion. A first angle (θ1) formed by a virtual surface orthogonal to the evacuation direction of the surface is formed by the virtual surface of the second tapered surface formed from the protruding end portion of the tip toward the outside of the suction portion. A method for transporting a semiconductor device, wherein the second angle (θ2) is in a relationship of θ1 ≦ θ2.

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