JP2012015560A5 - - Google Patents

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Publication number
JP2012015560A5
JP2012015560A5 JP2011230095A JP2011230095A JP2012015560A5 JP 2012015560 A5 JP2012015560 A5 JP 2012015560A5 JP 2011230095 A JP2011230095 A JP 2011230095A JP 2011230095 A JP2011230095 A JP 2011230095A JP 2012015560 A5 JP2012015560 A5 JP 2012015560A5
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JP
Japan
Prior art keywords
axis
nitride semiconductor
cladding layer
group iii
degrees
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JP2011230095A
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English (en)
Japanese (ja)
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JP5387650B2 (ja
JP2012015560A (ja
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Publication of JP2012015560A5 publication Critical patent/JP2012015560A5/ja
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JP2011230095A 2011-10-19 2011-10-19 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 Expired - Fee Related JP5387650B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011230095A JP5387650B2 (ja) 2011-10-19 2011-10-19 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011230095A JP5387650B2 (ja) 2011-10-19 2011-10-19 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2009228747A Division JP5387302B2 (ja) 2009-09-30 2009-09-30 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法

Publications (3)

Publication Number Publication Date
JP2012015560A JP2012015560A (ja) 2012-01-19
JP2012015560A5 true JP2012015560A5 (https=) 2012-11-15
JP5387650B2 JP5387650B2 (ja) 2014-01-15

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ID=45601535

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JP2011230095A Expired - Fee Related JP5387650B2 (ja) 2011-10-19 2011-10-19 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法

Country Status (1)

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JP (1) JP5387650B2 (https=)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5014967B2 (ja) * 2007-12-06 2012-08-29 シャープ株式会社 発光素子及び発光素子の製造方法

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