JP2012039148A5 - - Google Patents
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- Publication number
- JP2012039148A5 JP2012039148A5 JP2011230905A JP2011230905A JP2012039148A5 JP 2012039148 A5 JP2012039148 A5 JP 2012039148A5 JP 2011230905 A JP2011230905 A JP 2011230905A JP 2011230905 A JP2011230905 A JP 2011230905A JP 2012039148 A5 JP2012039148 A5 JP 2012039148A5
- Authority
- JP
- Japan
- Prior art keywords
- axis
- nitride semiconductor
- cladding layer
- group iii
- degrees
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 23
- 238000005253 cladding Methods 0.000 claims 12
- 150000004767 nitrides Chemical class 0.000 claims 11
- 229910002601 GaN Inorganic materials 0.000 claims 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 5
- 239000013078 crystal Substances 0.000 claims 3
- 230000001154 acute effect Effects 0.000 claims 2
- 238000002310 reflectometry Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011230905A JP5348217B2 (ja) | 2011-10-20 | 2011-10-20 | Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011230905A JP5348217B2 (ja) | 2011-10-20 | 2011-10-20 | Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009228894A Division JP5397136B2 (ja) | 2009-09-30 | 2009-09-30 | Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012039148A JP2012039148A (ja) | 2012-02-23 |
| JP2012039148A5 true JP2012039148A5 (https=) | 2012-11-08 |
| JP5348217B2 JP5348217B2 (ja) | 2013-11-20 |
Family
ID=45850705
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011230905A Expired - Fee Related JP5348217B2 (ja) | 2011-10-20 | 2011-10-20 | Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5348217B2 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105406358B (zh) * | 2015-11-25 | 2018-11-02 | 武汉电信器件有限公司 | 一种GaN基激光器制备方法和结构 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008187044A (ja) * | 2007-01-30 | 2008-08-14 | Rohm Co Ltd | 半導体レーザ |
-
2011
- 2011-10-20 JP JP2011230905A patent/JP5348217B2/ja not_active Expired - Fee Related
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