JP2011523212A - 半導体波長変換器が接合された発光ダイオード - Google Patents

半導体波長変換器が接合された発光ダイオード Download PDF

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Publication number
JP2011523212A
JP2011523212A JP2011512493A JP2011512493A JP2011523212A JP 2011523212 A JP2011523212 A JP 2011523212A JP 2011512493 A JP2011512493 A JP 2011512493A JP 2011512493 A JP2011512493 A JP 2011512493A JP 2011523212 A JP2011523212 A JP 2011523212A
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wavelength
light
photoluminescent
region
photoluminescent element
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JP2011523212A5 (https=
Inventor
エー． ハーセ，マイケル
ジェイ． ミラー，トーマス
ジェイ． オウダーカーク，アンドリュー
ダブリュ． ケリー，トミー
エー． レザーデイル，キャサリン
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of JP2011523212A publication Critical patent/JP2011523212A/ja
Publication of JP2011523212A5 publication Critical patent/JP2011523212A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
JP2011512493A 2008-06-05 2009-04-23 半導体波長変換器が接合された発光ダイオード Withdrawn JP2011523212A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US5907308P 2008-06-05 2008-06-05
US61/059,073 2008-06-05
PCT/US2009/041521 WO2009148717A2 (en) 2008-06-05 2009-04-23 Light emitting diode with bonded semiconductor wavelength converter

Publications (2)

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JP2011523212A true JP2011523212A (ja) 2011-08-04
JP2011523212A5 JP2011523212A5 (https=) 2012-06-14

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JP2011512493A Withdrawn JP2011523212A (ja) 2008-06-05 2009-04-23 半導体波長変換器が接合された発光ダイオード

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US (1) US20110186877A1 (https=)
EP (1) EP2301087A2 (https=)
JP (1) JP2011523212A (https=)
KR (1) KR20110019390A (https=)
CN (1) CN102057504A (https=)
TW (1) TW201006013A (https=)
WO (1) WO2009148717A2 (https=)

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JP2016517537A (ja) * 2013-03-11 2016-06-16 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 調光可能な発光装置
JP2017513225A (ja) * 2014-04-01 2017-05-25 サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィク 半導体画素、このような画素のマトリクス、このような画素を製造するための半導体構造、およびそれらの製作方法
JP2022543821A (ja) * 2019-08-06 2022-10-14 プレッシー・セミコンダクターズ・リミテッド Ｌｅｄアレイおよびｌｅｄアレイを形成する方法

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KR20120016261A (ko) 2009-05-05 2012-02-23 쓰리엠 이노베이티브 프로퍼티즈 컴파니 인듐 공핍 메커니즘을 이용하여 인듐-함유 기판 상에 성장된 반도체 디바이스
KR20120015337A (ko) 2009-05-05 2012-02-21 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Ｌｅｄ에서 사용하기 위한 재방출 반도체 캐리어 디바이스 및 제조 방법
CN102473816B (zh) 2009-06-30 2015-03-11 3M创新有限公司 基于电流拥挤调节颜色的电致发光装置
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JP2012532454A (ja) 2009-06-30 2012-12-13 スリーエム イノベイティブ プロパティズ カンパニー カドミウム非含有の再発光半導体構成体
US8835963B2 (en) 2010-06-04 2014-09-16 3M Innovative Properties Company Light converting and emitting device with minimal edge recombination
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DE102011050450A1 (de) 2011-05-18 2012-11-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip, optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
CN106410006B (zh) * 2016-06-22 2018-08-17 厦门乾照光电股份有限公司 一种集成可见光指示装置的紫外发光二极管及其生产方法
FR3076080B1 (fr) * 2017-12-27 2019-11-29 Aledia Pseudo-substrat pour dispositif optoelectronique et son procede de fabrication
WO2020251078A1 (ko) * 2019-06-12 2020-12-17 서울바이오시스 주식회사 발광 적층체 및 이를 포함한 표시 장치
CN115172544A (zh) * 2022-06-22 2022-10-11 广东中民工业技术创新研究院有限公司 一种基于全氮化物的外延芯片结构和发光器件

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016517537A (ja) * 2013-03-11 2016-06-16 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 調光可能な発光装置
JP2017513225A (ja) * 2014-04-01 2017-05-25 サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィク 半導体画素、このような画素のマトリクス、このような画素を製造するための半導体構造、およびそれらの製作方法
JP2022543821A (ja) * 2019-08-06 2022-10-14 プレッシー・セミコンダクターズ・リミテッド Ｌｅｄアレイおよびｌｅｄアレイを形成する方法
JP7387871B2 (ja) 2019-08-06 2023-11-28 プレッシー・セミコンダクターズ・リミテッド Ｌｅｄアレイおよびｌｅｄアレイを形成する方法

Also Published As

Publication number Publication date
WO2009148717A2 (en) 2009-12-10
WO2009148717A3 (en) 2010-02-18
TW201006013A (en) 2010-02-01
KR20110019390A (ko) 2011-02-25
US20110186877A1 (en) 2011-08-04
EP2301087A2 (en) 2011-03-30
CN102057504A (zh) 2011-05-11

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