JP2011517082A - 半導体デバイスの製造方法および半導体デバイス - Google Patents
半導体デバイスの製造方法および半導体デバイス Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 147
- 239000002184 metal Substances 0.000 claims abstract description 147
- 239000002019 doping agent Substances 0.000 claims abstract description 62
- 238000000034 method Methods 0.000 claims abstract description 35
- 238000000151 deposition Methods 0.000 claims abstract description 15
- 230000008569 process Effects 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000000059 patterning Methods 0.000 claims abstract description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 7
- 229910021332 silicide Inorganic materials 0.000 claims description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 13
- 230000035515 penetration Effects 0.000 abstract description 2
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 13
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
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- 239000010937 tungsten Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
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- 229910052723 transition metal Inorganic materials 0.000 description 2
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- 229910052691 Erbium Inorganic materials 0.000 description 1
- -1 Nitrogen ions Chemical class 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
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- 125000005843 halogen group Chemical group 0.000 description 1
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- 230000006872 improvement Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/82345—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28097—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a metallic silicide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
- H01L29/4975—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 being a silicide layer, e.g. TiSi2
Abstract
Description
Claims (14)
- 半導体デバイスの製造方法であって、
所定数の活性領域(110,120)および該活性領域(110,120)を被覆する誘電体層(130)を含む基板(100)を提供する工程と、
前記誘電体層上に積層体(140,150,160)を形成する工程であって、
前記誘電体層(130)上に、第1の厚さを有する第1の金属層(140)を析出させる工程と、
該第1の金属層(140)上に、第2の厚さを有する第2の金属層(150)を析出させる工程であり、前記第2の厚さが前記第1の厚さより厚い工程と、
前記第2の金属層(150)にドーパント(152,154)を導入する工程と、
前記デバイスを温度上昇下にさらし、前記ドーパント(152,154)の少なくとも一部を、前記第2の金属層(150)から前記第1の金属層(140)と前記第2の金属層(150)との界面を越えて、移動させる工程と、
前記積層体を所定数のゲート電極(170)にパターニングする工程と、を有する方法。 - 前記第1の金属層(140)が、前記第2の金属層(150)よりも前記ドーパント(152,154)に対して高い溶解性を有する、請求項1に記載の方法。
- 前記第2の金属層(150)にドーパント(152,154)を導入する工程が、前記第1の金属層(140)上に第2の金属層(150)を析出させる工程に先立って行われる、請求項1または2に記載の方法。
- 前記第2の金属層(150)上に、ポリシリコン層(160)を析出させる工程をさらに有し、前記温度上昇工程は、前記第2の金属層をケイ化することをさらに有する、請求項1〜3のいずれか1項に記載の方法。
- 前記デバイスを更なる温度上昇下にさらし、前記ドーパント(152,154)の少なくとも一部を、前記界面を越えて移動させる工程をさらに有する、請求項1に記載の方法。
- 前記第1の厚さが10nm未満である、請求項1〜5のいずれか1項に記載の方法。
- 前記所定数の活性領域が、第1の導電型の活性領域(110)および第2の導電型の活性領域(120)を有し、前記第2の金属層(150)にドーパント(152,154)を導入する工程が、
前記第1の導電型の活性領域(110)上に位置する前記第2の金属層(150)の領域に対して、第1のドーパント(152)を選択的に導入し、
前記第2の導電型の活性領域(120)上に位置する前記第2の金属層(150)の領域に対して、第2のドーパント(154)を選択的に導入することを有する、請求項1〜6のいずれか1項に記載の方法。 - 前記第1のドーパント(152)が、AsおよびTeからなる群より選択され、前記第2のドーパント(154)が、Al,InおよびFからなる群より選択される、請求項7に記載の方法。
- 半導体デバイスであって、
所定数の活性領域(110,120)を含む基板(100)と、
前記活性領域(110,120)を被覆する誘電体層(130)と、
前記活性領域(110,120)の1つにそれぞれ位置する所定数のゲート電極(170)と、を有し、それぞれのゲート電極(170)は積層体を有し、
該積層体は、前記誘電体層(130)上に析出させた、第1の厚さを有する第1の金属層(140)と、
前記第1の金属層(140)上に析出させた、第2の厚さを有し、該第2の厚さが前記第1の厚さより厚い、第2の金属層(150)と、
前記第2の金属層(150)と前記第1の金属層(140)との界面領域近くに位置するドーパントプロファイル(152,154)と、を有し、該ドーパントプロファイル(152,154)は、前記第1の金属層(140)および前記第2の金属層(150)に共有される積層体である半導体デバイス。 - それぞれのゲート電極(170)が、前記第2の金属層(150)上にポリシリコン層(160)を有し、前記第2の金属層が金属シリサイド(150’)を有する、請求項9に記載の半導体デバイス。
- 前記第1の金属層(140)が、前記第2の金属層(150)よりも前記ドーパントに対して高い溶解性を有する、請求項9または10に記載の半導体デバイス。
- 前記第1の厚さが10nm未満である、請求項9〜11のいずれか1項に記載の半導体デバイス。
- 前記所定数の活性領域が、第1の導電型の活性領域(110)および第2の導電型の活性領域(120)を有し、前記所定数のゲート電極(170)が、
前記第1の導電型の活性領域(110)上に位置し、第1のドーパント型のドーパントプロファイル(152)を有する第1のゲート電極(170)と、
前記第2の導電型の活性領域(120)上に位置し、第2のドーパント型のドーパントプロファイル(154)を有する第2のゲート電極(170)と、
を有する請求項9〜12のいずれか1項に記載の半導体デバイス。 - 前記第1のドーパント型が、AsおよびTeからなる群より選択され、前記第2のドーパント型が、Al,InおよびFからなる群より選択される、請求項13に記載の半導体デバイス。
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EP08103326 | 2008-04-02 | ||
EP08103326.8 | 2008-04-02 | ||
PCT/IB2009/051324 WO2009122345A1 (en) | 2008-04-02 | 2009-03-30 | Method of manufacturing a semiconductor device and semiconductor device |
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JP2011517082A true JP2011517082A (ja) | 2011-05-26 |
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US (1) | US20110049634A1 (ja) |
EP (1) | EP2260510A1 (ja) |
JP (1) | JP2011517082A (ja) |
CN (1) | CN101981688B (ja) |
WO (1) | WO2009122345A1 (ja) |
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DE102009047306B4 (de) * | 2009-11-30 | 2015-02-12 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Verfahren zur Herstellung von Gateelektrodenstrukturen durch getrennte Entfernung von Platzhaltermaterialien unter Anwendung eines Maskierungsschemas vor der Gatestrukturierung |
DE102009055435B4 (de) | 2009-12-31 | 2017-11-09 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Verstärkter Einschluss von Metallgateelektrodenstrukturen mit großem ε durch Verringern der Materialerosion einer dielektrischen Deckschicht beim Erzeugen einer verformungsinduzierenden Halbleiterlegierung |
CN107437501A (zh) * | 2016-05-26 | 2017-12-05 | 北大方正集团有限公司 | 一种栅极结构及其制造方法 |
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- 2009-03-30 JP JP2011502474A patent/JP2011517082A/ja active Pending
- 2009-03-30 US US12/935,760 patent/US20110049634A1/en not_active Abandoned
- 2009-03-30 EP EP09728115A patent/EP2260510A1/en not_active Withdrawn
- 2009-03-30 WO PCT/IB2009/051324 patent/WO2009122345A1/en active Application Filing
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JP2002299610A (ja) * | 2001-03-30 | 2002-10-11 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2007165414A (ja) * | 2005-12-09 | 2007-06-28 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2007266188A (ja) * | 2006-03-28 | 2007-10-11 | Fujitsu Ltd | 半導体装置およびその製造方法 |
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US20110049634A1 (en) | 2011-03-03 |
WO2009122345A1 (en) | 2009-10-08 |
CN101981688A (zh) | 2011-02-23 |
EP2260510A1 (en) | 2010-12-15 |
CN101981688B (zh) | 2014-04-02 |
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