JP2011507288A - レーザ光源 - Google Patents
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- JP2011507288A JP2011507288A JP2010538336A JP2010538336A JP2011507288A JP 2011507288 A JP2011507288 A JP 2011507288A JP 2010538336 A JP2010538336 A JP 2010538336A JP 2010538336 A JP2010538336 A JP 2010538336A JP 2011507288 A JP2011507288 A JP 2011507288A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/1017—Waveguide having a void for insertion of materials to change optical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
・少なくとも2つの活性領域を有する活性層を備えた半導体層列。これらの活性領域は動作中に、放射出力結合面として形成された半導体層列の側面を介して放射方向に電磁放射を放射するように設けられている。
・前記半導体層列の主表面に設けられた表面パターン部。
・前記半導体層列の主表面において前記少なくとも2つの活性領域それぞれに設けられた電気的面コンタクト。
・前記少なくとも2つの活性領域は前記放射方向に対して横方向に、相互に離隔して前記活性層内に配置されている。
・前記電気的面コンタクトはそれぞれ第1の部分領域と、幅が放射方向に沿って前記放射出力結合面に向かって拡大していく第2の部分領域とを含む。
・前記表面パターン部は前記少なくとも2つの電気的面コンタクト間に、前記放射方向に沿った少なくとも1つの第1の凹入部と、第2の凹入部とを有する。
・前記電気的面コンタクトの第1の部分領域はそれぞれ、少なくとも2つの第2の凹入部間に配置されている。
Claims (15)
- ・少なくとも2つの活性領域(45)を有する活性層を備えた半導体層列(10)と、
・前記半導体層列(10)の主表面(14)上において前記少なくとも2つの活性領域(45)それぞれに設けられた電気的面コンタクト(30)と、
・前記半導体層列(10)の主表面(14)に設けられた表面パターン部
とを備えたレーザ光源であって、
前記活性領域(10)は動作中に、放射出力結合面(12)として形成された前記半導体層列(10)の側面を介して放射方向(90)に電磁放射を放射するように形成されており、
前記少なくとも2つの活性領域(45)は前記放射方向(90)に対して横方向に、相互に離隔して前記活性層(40)内に配置されており、
・前記電気的面コンタクト(30)はそれぞれ第1の部分領域(31)と、幅が前記放射方向(90)に沿って前記放射出力結合面(12)に向かって拡大していく第2の部分領域(32)とを含み、
・前記表面パターン部は前記少なくとも2つの電気的面コンタクト(30)間に、前記放射方向(90)に沿った少なくとも1つの第1の凹入部(6)と、第2の凹入部(7)とを有し、
・前記電気的面コンタクト(30)の第1の部分領域(31)はそれぞれ、少なくとも2つの第2の凹入部(7)間に配置されている
ことを特徴とする、レーザ光源。 - 前記第2の部分領域(32)はそれぞれ台形の形状を有し、それぞれ前記放射出力結合面(12)に接する、請求項1記載のレーザ光源。
- 前記第1の部分領域(31)はそれぞれ一定の幅で、前記主表面(14)上に前記放射方向(90)に沿って延在する、請求項1または2記載のレーザ光源。
- 前記活性層(40)は基板(1)上において、2つの導波層(42,43)間に配置されており、
前記第1の凹入部(6)は前記主表面(14)から、前記活性層(40)と前記導波層(42,43)と前記基板(1)とのうちから選択された少なくとも1つの層内まで達する、請求項1から3までのいずれか1項記載のレーザ光源。 - 前記第1の凹入部(6)は前記主表面(14)上において、前記放射出力結合面(12)から、該放射出力結合面(12)に対向する前記半導体層列(10)の側面(13)まで延在する、請求項1から4までのいずれか1項記載のレーザ光源。
- 前記第1の凹入部(6)は、前記放射方向(90)に対して平行に少なくとも1つのトレンチを有する、請求項1から5までのいずれか1項記載のレーザ光源。
- 前記第1の凹入部(6)は、前記主表面(14)との間に90°以上の角度を成す側壁を有する、請求項1から6までのいずれか1項記載のレーザ光源。
- 前記第1の凹入部(6)および/または前記第2の凹入部(7)内に吸収性材料が配置されている、請求項1から7までのいずれか1項記載のレーザ光源。
- 前記第2の凹入部(7)のうち少なくとも1つが、前記放射方向(90)との間に0°を上回り90°以下の角度を成す延在方向(92)を有する、請求項1から8までのいずれか1項記載のレーザ光源。
- 前記第2の凹入部(7)のうち少なくとも1つが、前記電気的面コンタクト(30)との間に4μm以下の間隔を有する、請求項1から9までのいずれか1項記載のレーザ光源。
- 前記活性層(40)は基板(1)上において、2つの導波層(42,43)間に配置されており、
前記第2の凹入部(7)のうち少なくとも1つは前記主表面(14)から、前記活性層(40)と前記導波層(42,43)と前記基板(1)とのうちから選択された少なくとも1つの層内まで達する、請求項1から10までのいずれか1項記載のレーザ光源。 - 前記第2の凹入部(7)のうち少なくとも1つは、前記主表面(14)との間に90°以上の角度を成す側壁を有する、請求項1から11までのいずれか1項記載のレーザ光源。
- 前記主表面(14)は、前記電気的面コンタクト(30)を有するリッジ状の構造部(11)を有する、請求項1から12までのいずれか1項記載のレーザ光源。
- 前記主表面(14)は、前記リッジ状の構造部(11)に接するエッチングストップ層(46)を含む、請求項13記載のレーザ光源。
- ・前記半導体層列(10)は、前記少なくとも2つの活性領域(45)から離隔して、前記活性層(40)中に少なくとも1つの別の活性領域を有し、
・前記主表面(14)は前記別の活性領域の上方に、第1の部分領域(31′)および第2の部分領域(32′)を含む別の電気的面コンタクト(30′)を備えており、
・前記表面パターン部は前記放射方向(90)に沿って少なくとも1つの別の第1の凹入部(6′)を有し、該別の第1の凹入部(6′)は前記少なくとも2つの電気的面コンタクト(30)と前記別の電気的面コンタクト(30′)との間に配置され、
前記表面パターン部は2つの別の第2の凹入部(7′)を有し、該別の第2の凹入部(7′)間に、前記別の電気的面コンタクト(30′)の第1の部分領域(31′)が配置されている、請求項1から14までのいずれか1項記載のレーザ光源。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007061922 | 2007-12-21 | ||
DE102007061922.9 | 2007-12-21 | ||
DE102008013896.7 | 2008-03-12 | ||
DE102008013896A DE102008013896A1 (de) | 2007-12-21 | 2008-03-12 | Laserlichtquelle |
PCT/DE2008/002123 WO2009080011A2 (de) | 2007-12-21 | 2008-12-16 | Laserlichtquelle |
Publications (2)
Publication Number | Publication Date |
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JP2011507288A true JP2011507288A (ja) | 2011-03-03 |
JP5323087B2 JP5323087B2 (ja) | 2013-10-23 |
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Application Number | Title | Priority Date | Filing Date |
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JP2010538336A Active JP5323087B2 (ja) | 2007-12-21 | 2008-12-16 | レーザ光源 |
Country Status (5)
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US (1) | US8306084B2 (ja) |
EP (1) | EP2220733B1 (ja) |
JP (1) | JP5323087B2 (ja) |
DE (1) | DE102008013896A1 (ja) |
WO (1) | WO2009080011A2 (ja) |
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WO2016063605A1 (ja) * | 2014-10-23 | 2016-04-28 | ソニー株式会社 | 光半導体素子及びレーザ装置組立体 |
JP2016122705A (ja) * | 2014-12-24 | 2016-07-07 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
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DE102010015197A1 (de) | 2010-04-16 | 2012-01-19 | Osram Opto Semiconductors Gmbh | Laserlichtquelle |
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DE102012110613A1 (de) * | 2012-11-06 | 2014-05-08 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
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DE102016106495A1 (de) | 2016-04-08 | 2017-10-12 | Osram Opto Semiconductors Gmbh | Halbleiterlaser |
JP6627651B2 (ja) * | 2016-06-09 | 2020-01-08 | 三菱電機株式会社 | レーザ素子、レーザ素子の製造方法 |
DE102016125857B4 (de) | 2016-12-29 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaserdiode |
DE112019006646B4 (de) * | 2019-01-10 | 2024-04-18 | Mitsubishi Electric Corporation | Halbleiter-Laservorrichtung |
US11837838B1 (en) * | 2020-01-31 | 2023-12-05 | Freedom Photonics Llc | Laser having tapered region |
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- 2008-12-16 WO PCT/DE2008/002123 patent/WO2009080011A2/de active Application Filing
- 2008-12-16 EP EP08863511.5A patent/EP2220733B1/de active Active
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JPH08195525A (ja) * | 1995-01-18 | 1996-07-30 | Nec Corp | 半導体レーザ |
JP2005026610A (ja) * | 2003-07-02 | 2005-01-27 | Hamamatsu Photonics Kk | 半導体レーザアレイ |
FR2879840A1 (fr) * | 2004-12-22 | 2006-06-23 | Thales Sa | Laser a semiconducteur stable en temperature et a faisceau homogene |
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WO2016063605A1 (ja) * | 2014-10-23 | 2016-04-28 | ソニー株式会社 | 光半導体素子及びレーザ装置組立体 |
JPWO2016063605A1 (ja) * | 2014-10-23 | 2017-08-03 | ソニー株式会社 | 光半導体素子及びレーザ装置組立体 |
US10109980B2 (en) | 2014-10-23 | 2018-10-23 | Sony Corporation | Optical semiconductor element and laser device assembly |
JP2016122705A (ja) * | 2014-12-24 | 2016-07-07 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
Also Published As
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US20110051766A1 (en) | 2011-03-03 |
US8306084B2 (en) | 2012-11-06 |
DE102008013896A1 (de) | 2009-06-25 |
WO2009080011A3 (de) | 2009-10-01 |
JP5323087B2 (ja) | 2013-10-23 |
WO2009080011A2 (de) | 2009-07-02 |
EP2220733B1 (de) | 2018-10-10 |
EP2220733A2 (de) | 2010-08-25 |
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