JP2011505069A5 - - Google Patents
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- Publication number
- JP2011505069A5 JP2011505069A5 JP2010535204A JP2010535204A JP2011505069A5 JP 2011505069 A5 JP2011505069 A5 JP 2011505069A5 JP 2010535204 A JP2010535204 A JP 2010535204A JP 2010535204 A JP2010535204 A JP 2010535204A JP 2011505069 A5 JP2011505069 A5 JP 2011505069A5
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- refractive index
- index profile
- emitting element
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 28
- 230000005855 radiation Effects 0.000 claims 9
- 238000009826 distribution Methods 0.000 claims 4
- 238000000034 method Methods 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 2
- 230000007423 decrease Effects 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 230000000630 rising effect Effects 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007057773 | 2007-11-30 | ||
| DE102007057773.9 | 2007-11-30 | ||
| DE102007061458A DE102007061458A1 (de) | 2007-11-30 | 2007-12-20 | Verfahren zur Herstellung eines strahlungsemittierenden Bauelements und strahlungsemittierendes Bauelement |
| DE102007061458.8 | 2007-12-20 | ||
| PCT/DE2008/001734 WO2009067969A1 (de) | 2007-11-30 | 2008-10-24 | Verfahren zur herstellung eines strahlungsemittierenden bauelements und strahlungsemittierendes bauelement |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011505069A JP2011505069A (ja) | 2011-02-17 |
| JP2011505069A5 true JP2011505069A5 (https=) | 2011-11-17 |
| JP5455919B2 JP5455919B2 (ja) | 2014-03-26 |
Family
ID=40585961
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010535204A Expired - Fee Related JP5455919B2 (ja) | 2007-11-30 | 2008-10-24 | 発光素子の製造方法および発光素子 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US9018641B2 (https=) |
| EP (1) | EP2218153B1 (https=) |
| JP (1) | JP5455919B2 (https=) |
| DE (1) | DE102007061458A1 (https=) |
| WO (1) | WO2009067969A1 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102016110790B4 (de) | 2016-06-13 | 2022-01-13 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaserdiode |
| DE102016122147B4 (de) | 2016-11-17 | 2022-06-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaser |
| US11025031B2 (en) | 2016-11-29 | 2021-06-01 | Leonardo Electronics Us Inc. | Dual junction fiber-coupled laser diode and related methods |
| US11406004B2 (en) | 2018-08-13 | 2022-08-02 | Leonardo Electronics Us Inc. | Use of metal-core printed circuit board (PCB) for generation of ultra-narrow, high-current pulse driver |
| DE102019121924B4 (de) | 2018-08-14 | 2026-01-22 | Leonardo Electronics Us Inc. | Laserbaugruppe und zugehörige verfahren |
| US11296481B2 (en) | 2019-01-09 | 2022-04-05 | Leonardo Electronics Us Inc. | Divergence reshaping array |
| US11752571B1 (en) | 2019-06-07 | 2023-09-12 | Leonardo Electronics Us Inc. | Coherent beam coupler |
| EP3792683A1 (en) | 2019-09-16 | 2021-03-17 | Leonardo Electronics US Inc. | Asymmetric input intensity hexagonal homogenizer |
| US20260039088A1 (en) * | 2024-07-31 | 2026-02-05 | Ii-Vi Delaware, Inc. | Refractive index engineering for brightness enhancement and kink suppression in optical emitting devices |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63208290A (ja) | 1987-02-25 | 1988-08-29 | Hitachi Ltd | 半導体レ−ザ装置 |
| JPS6480088A (en) * | 1987-09-22 | 1989-03-24 | Toshiba Corp | Manufacture of semiconductor laser |
| US5212706A (en) * | 1991-12-03 | 1993-05-18 | University Of Connecticut | Laser diode assembly with tunnel junctions and providing multiple beams |
| US5509025A (en) * | 1994-04-04 | 1996-04-16 | At&T Corp. | Unipolar semiconductor laser |
| US5457709A (en) | 1994-04-04 | 1995-10-10 | At&T Ipm Corp. | Unipolar semiconductor laser |
| US5974069A (en) * | 1994-09-16 | 1999-10-26 | Rohm Co., Ltd | Semiconductor laser and manufacturing method thereof |
| JPH09232692A (ja) * | 1996-02-16 | 1997-09-05 | Lucent Technol Inc | 半導体レーザ装置 |
| JP3685925B2 (ja) * | 1998-05-11 | 2005-08-24 | アンリツ株式会社 | スーパールミネッセントダイオード |
| US6690700B2 (en) * | 1998-10-16 | 2004-02-10 | Agilent Technologies, Inc. | Nitride semiconductor device |
| JP3590277B2 (ja) * | 1998-11-13 | 2004-11-17 | 日本電信電話株式会社 | 半導体レーザ |
| DE10057698A1 (de) * | 2000-11-21 | 2002-06-06 | Osram Opto Semiconductors Gmbh | Übereinander gestapelte Halbleiter-Diodenlaser |
| JP3797151B2 (ja) * | 2001-07-05 | 2006-07-12 | ソニー株式会社 | レーザダイオード、光学ピックアップ装置、光ディスク装置および光通信装置 |
| AUPS150702A0 (en) | 2002-04-03 | 2002-05-09 | Australian National University, The | A low divergence diode laser |
| JP2003347677A (ja) | 2002-05-29 | 2003-12-05 | Sony Corp | 半導体レーザ素子 |
| US7085301B2 (en) * | 2002-07-12 | 2006-08-01 | The Board Of Trustees Of The University Of Illinois | Photonic crystal single transverse mode defect structure for vertical cavity surface emitting laser |
| JP2005116728A (ja) * | 2003-10-07 | 2005-04-28 | Sony Corp | 半導体レーザ |
| GB2406968B (en) * | 2003-10-11 | 2006-12-06 | Intense Photonics Ltd | Control of output beam divergence in a semiconductor waveguide device |
| JP2006270028A (ja) * | 2005-02-25 | 2006-10-05 | Mitsubishi Electric Corp | 半導体発光素子 |
| DE102007051315B4 (de) | 2007-09-24 | 2018-04-05 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Bauelement |
| JP2009088425A (ja) * | 2007-10-03 | 2009-04-23 | Sony Corp | 半導体レーザおよびその製造方法 |
-
2007
- 2007-12-20 DE DE102007061458A patent/DE102007061458A1/de not_active Withdrawn
-
2008
- 2008-10-24 JP JP2010535204A patent/JP5455919B2/ja not_active Expired - Fee Related
- 2008-10-24 US US12/745,686 patent/US9018641B2/en not_active Expired - Fee Related
- 2008-10-24 EP EP08855338.3A patent/EP2218153B1/de not_active Not-in-force
- 2008-10-24 WO PCT/DE2008/001734 patent/WO2009067969A1/de not_active Ceased
-
2015
- 2015-03-30 US US14/672,947 patent/US20150207294A1/en not_active Abandoned
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