JP2011504522A - 反射防止コーティング用カルボシランポリマー組成物 - Google Patents
反射防止コーティング用カルボシランポリマー組成物 Download PDFInfo
- Publication number
- JP2011504522A JP2011504522A JP2010532631A JP2010532631A JP2011504522A JP 2011504522 A JP2011504522 A JP 2011504522A JP 2010532631 A JP2010532631 A JP 2010532631A JP 2010532631 A JP2010532631 A JP 2010532631A JP 2011504522 A JP2011504522 A JP 2011504522A
- Authority
- JP
- Japan
- Prior art keywords
- group
- silane
- composition according
- groups
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 93
- 229920000642 polymer Polymers 0.000 title claims abstract description 44
- 238000000576 coating method Methods 0.000 title claims abstract description 10
- 239000011248 coating agent Substances 0.000 title claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 48
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 34
- 239000010703 silicon Substances 0.000 claims abstract description 30
- 238000010521 absorption reaction Methods 0.000 claims abstract description 24
- 239000002861 polymer material Substances 0.000 claims abstract description 7
- 230000001747 exhibiting effect Effects 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims description 170
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 92
- 239000011541 reaction mixture Substances 0.000 claims description 70
- 239000002904 solvent Substances 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 55
- 239000010410 layer Substances 0.000 claims description 48
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 47
- 239000010408 film Substances 0.000 claims description 45
- 125000003118 aryl group Chemical group 0.000 claims description 42
- 239000000178 monomer Substances 0.000 claims description 37
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 35
- 229910000077 silane Inorganic materials 0.000 claims description 32
- 239000002243 precursor Substances 0.000 claims description 31
- 125000000217 alkyl group Chemical group 0.000 claims description 30
- 230000015572 biosynthetic process Effects 0.000 claims description 30
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 29
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 29
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 28
- 230000008569 process Effects 0.000 claims description 27
- 238000003786 synthesis reaction Methods 0.000 claims description 27
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 25
- 229920002120 photoresistant polymer Polymers 0.000 claims description 25
- 125000001424 substituent group Chemical group 0.000 claims description 25
- 229910052739 hydrogen Inorganic materials 0.000 claims description 24
- 125000003342 alkenyl group Chemical group 0.000 claims description 23
- 239000001257 hydrogen Substances 0.000 claims description 23
- 238000006243 chemical reaction Methods 0.000 claims description 22
- -1 9-phenanthrenyl Chemical group 0.000 claims description 20
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 20
- 125000003545 alkoxy group Chemical group 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 20
- 125000000304 alkynyl group Chemical group 0.000 claims description 16
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 claims description 16
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 15
- 125000003367 polycyclic group Chemical group 0.000 claims description 14
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 13
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 12
- 229930195733 hydrocarbon Natural products 0.000 claims description 12
- 239000000047 product Substances 0.000 claims description 11
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 claims description 11
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 11
- 229920002554 vinyl polymer Polymers 0.000 claims description 11
- 239000005046 Chlorosilane Substances 0.000 claims description 10
- 239000004593 Epoxy Substances 0.000 claims description 10
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims description 10
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 10
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 9
- 239000004215 Carbon black (E152) Substances 0.000 claims description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 9
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 9
- 125000005647 linker group Chemical group 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 9
- BZLVMXJERCGZMT-UHFFFAOYSA-N Methyl tert-butyl ether Chemical compound COC(C)(C)C BZLVMXJERCGZMT-UHFFFAOYSA-N 0.000 claims description 8
- 125000004423 acyloxy group Chemical group 0.000 claims description 8
- 239000000654 additive Substances 0.000 claims description 8
- 125000004429 atom Chemical group 0.000 claims description 8
- 125000004432 carbon atom Chemical group C* 0.000 claims description 8
- 125000003700 epoxy group Chemical group 0.000 claims description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 6
- 125000002947 alkylene group Chemical group 0.000 claims description 6
- 150000001412 amines Chemical class 0.000 claims description 6
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims description 6
- 125000000732 arylene group Chemical group 0.000 claims description 6
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 6
- 238000004132 cross linking Methods 0.000 claims description 6
- 150000002430 hydrocarbons Chemical class 0.000 claims description 6
- 238000012643 polycondensation polymerization Methods 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229910052736 halogen Inorganic materials 0.000 claims description 5
- 150000002367 halogens Chemical class 0.000 claims description 5
- 230000007062 hydrolysis Effects 0.000 claims description 5
- 238000006460 hydrolysis reaction Methods 0.000 claims description 5
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 4
- 238000009835 boiling Methods 0.000 claims description 4
- 125000001246 bromo group Chemical group Br* 0.000 claims description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 4
- 239000003054 catalyst Substances 0.000 claims description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 4
- 125000001153 fluoro group Chemical group F* 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 125000003944 tolyl group Chemical group 0.000 claims description 4
- UCMZDKNUMKBJAA-UHFFFAOYSA-N 2,2-diethoxyethenyl(methyl)silane Chemical compound C[SiH2]C=C(OCC)OCC UCMZDKNUMKBJAA-UHFFFAOYSA-N 0.000 claims description 3
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- XGZGKDQVCBHSGI-UHFFFAOYSA-N butyl(triethoxy)silane Chemical compound CCCC[Si](OCC)(OCC)OCC XGZGKDQVCBHSGI-UHFFFAOYSA-N 0.000 claims description 3
- 239000007795 chemical reaction product Substances 0.000 claims description 3
- 239000007859 condensation product Substances 0.000 claims description 3
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 claims description 3
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 229920006395 saturated elastomer Chemical group 0.000 claims description 3
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 claims description 3
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 claims description 3
- 125000000882 C2-C6 alkenyl group Chemical group 0.000 claims description 2
- 125000003601 C2-C6 alkynyl group Chemical group 0.000 claims description 2
- IYABWNGZIDDRAK-UHFFFAOYSA-N allene Chemical group C=C=C IYABWNGZIDDRAK-UHFFFAOYSA-N 0.000 claims description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- DMZWVCJEOLBQCZ-UHFFFAOYSA-N chloro(ethenyl)silane Chemical compound Cl[SiH2]C=C DMZWVCJEOLBQCZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 2
- 125000004122 cyclic group Chemical group 0.000 claims description 2
- GGYBGSBSJFBQER-UHFFFAOYSA-N diethoxy-phenanthren-9-yl-(2-triethoxysilylethyl)silane Chemical compound C1=CC=C2C([Si](OCC)(OCC)CC[Si](OCC)(OCC)OCC)=CC3=CC=CC=C3C2=C1 GGYBGSBSJFBQER-UHFFFAOYSA-N 0.000 claims description 2
- SYHKCPPMADKIMF-UHFFFAOYSA-N diethoxy-phenyl-(2-triethoxysilylethyl)silane Chemical compound CCO[Si](OCC)(OCC)CC[Si](OCC)(OCC)C1=CC=CC=C1 SYHKCPPMADKIMF-UHFFFAOYSA-N 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 230000000379 polymerizing effect Effects 0.000 claims description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Chemical group CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 claims description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims description 2
- 229930195734 saturated hydrocarbon Chemical group 0.000 claims description 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims description 2
- UQMOLLPKNHFRAC-UHFFFAOYSA-N tetrabutyl silicate Chemical compound CCCCO[Si](OCCCC)(OCCCC)OCCCC UQMOLLPKNHFRAC-UHFFFAOYSA-N 0.000 claims description 2
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 claims description 2
- ZQZCOBSUOFHDEE-UHFFFAOYSA-N tetrapropyl silicate Chemical compound CCCO[Si](OCCC)(OCCC)OCCC ZQZCOBSUOFHDEE-UHFFFAOYSA-N 0.000 claims description 2
- IPKCIJVIMLARCO-UHFFFAOYSA-N trichloro-[2-[dichloro(phenyl)silyl]ethyl]silane Chemical compound Cl[Si](Cl)(Cl)CC[Si](Cl)(Cl)C1=CC=CC=C1 IPKCIJVIMLARCO-UHFFFAOYSA-N 0.000 claims description 2
- 229930195735 unsaturated hydrocarbon Chemical group 0.000 claims description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims 3
- 230000003301 hydrolyzing effect Effects 0.000 claims 2
- 230000000996 additive effect Effects 0.000 claims 1
- 238000009833 condensation Methods 0.000 claims 1
- 230000005494 condensation Effects 0.000 claims 1
- 125000004438 haloalkoxy group Chemical group 0.000 claims 1
- 229920000647 polyepoxide Polymers 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 19
- 238000013461 design Methods 0.000 abstract description 5
- 239000007787 solid Substances 0.000 description 49
- 239000000243 solution Substances 0.000 description 39
- 238000010992 reflux Methods 0.000 description 30
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 25
- 125000005375 organosiloxane group Chemical group 0.000 description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 21
- 239000004810 polytetrafluoroethylene Substances 0.000 description 20
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 20
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 18
- 238000010790 dilution Methods 0.000 description 17
- 239000012895 dilution Substances 0.000 description 17
- 238000001914 filtration Methods 0.000 description 16
- 238000000151 deposition Methods 0.000 description 15
- 230000003667 anti-reflective effect Effects 0.000 description 13
- 238000003756 stirring Methods 0.000 description 12
- 230000003595 spectral effect Effects 0.000 description 11
- 230000008021 deposition Effects 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 125000000962 organic group Chemical group 0.000 description 6
- 238000006116 polymerization reaction Methods 0.000 description 6
- 238000011161 development Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000007334 copolymerization reaction Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 238000003747 Grignard reaction Methods 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003377 acid catalyst Substances 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 125000002723 alicyclic group Chemical group 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 125000004450 alkenylene group Chemical group 0.000 description 2
- 125000004419 alkynylene group Chemical group 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000003607 modifier Substances 0.000 description 2
- 150000001282 organosilanes Chemical class 0.000 description 2
- 150000003961 organosilicon compounds Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 2
- 239000012265 solid product Substances 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- 238000009489 vacuum treatment Methods 0.000 description 2
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 description 1
- LBLYYCQCTBFVLH-UHFFFAOYSA-N 2-Methylbenzenesulfonic acid Chemical compound CC1=CC=CC=C1S(O)(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-N 0.000 description 1
- YHQXBTXEYZIYOV-UHFFFAOYSA-N 3-methylbut-1-ene Chemical compound CC(C)C=C YHQXBTXEYZIYOV-UHFFFAOYSA-N 0.000 description 1
- RSQXKVWKJVUZDG-UHFFFAOYSA-N 9-bromophenanthrene Chemical compound C1=CC=C2C(Br)=CC3=CC=CC=C3C2=C1 RSQXKVWKJVUZDG-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 description 1
- 125000005571 adamantylene group Chemical group 0.000 description 1
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 125000004369 butenyl group Chemical group C(=CCC)* 0.000 description 1
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 125000006165 cyclic alkyl group Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229940101638 effient Drugs 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- OUGJKAQEYOUGKG-UHFFFAOYSA-N ethyl 2-methylidenebutanoate Chemical compound CCOC(=O)C(=C)CC OUGJKAQEYOUGKG-UHFFFAOYSA-N 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 125000001188 haloalkyl group Chemical group 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 125000006038 hexenyl group Chemical group 0.000 description 1
- 239000013628 high molecular weight specie Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 125000001905 inorganic group Chemical group 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000013627 low molecular weight specie Substances 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 125000004957 naphthylene group Chemical group 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
- 125000003518 norbornenyl group Chemical group C12(C=CC(CC1)C2)* 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 125000002255 pentenyl group Chemical group C(=CCCC)* 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000011973 solid acid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- KURDMYBBAGBMGG-UHFFFAOYSA-N trichloro-[2-[dichloro(phenanthren-9-yl)silyl]ethyl]silane Chemical compound C1=CC=C2C([Si](Cl)(Cl)CC[Si](Cl)(Cl)Cl)=CC3=CC=CC=C3C2=C1 KURDMYBBAGBMGG-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
- C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
- C08G77/52—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages containing aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/006—Anti-reflective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Architecture (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Silicon Polymers (AREA)
- Paints Or Removers (AREA)
- Formation Of Insulating Films (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US98584507P | 2007-11-06 | 2007-11-06 | |
| PCT/FI2008/050637 WO2009060125A1 (en) | 2007-11-06 | 2008-11-06 | Carbosilane polymer compositions for anti-reflective coatings |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014040694A Division JP5902216B2 (ja) | 2007-11-06 | 2014-03-03 | 反射防止コーティング用カルボシランポリマー組成物 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011504522A true JP2011504522A (ja) | 2011-02-10 |
| JP2011504522A5 JP2011504522A5 (enExample) | 2011-12-01 |
Family
ID=40474837
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010532631A Pending JP2011504522A (ja) | 2007-11-06 | 2008-11-06 | 反射防止コーティング用カルボシランポリマー組成物 |
| JP2014040694A Expired - Fee Related JP5902216B2 (ja) | 2007-11-06 | 2014-03-03 | 反射防止コーティング用カルボシランポリマー組成物 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014040694A Expired - Fee Related JP5902216B2 (ja) | 2007-11-06 | 2014-03-03 | 反射防止コーティング用カルボシランポリマー組成物 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US8765899B2 (enExample) |
| EP (1) | EP2209839A1 (enExample) |
| JP (2) | JP2011504522A (enExample) |
| TW (1) | TWI452069B (enExample) |
| WO (1) | WO2009060125A1 (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021505932A (ja) * | 2017-12-07 | 2021-02-18 | サムスン エスディアイ カンパニー, リミテッドSamsung Sdi Co., Ltd. | 色変換パネルおよび色変換パネルの製造方法 |
| JP2024019711A (ja) * | 2017-12-10 | 2024-02-09 | マジック リープ， インコーポレイテッド | 光学導波管上の反射防止性コーティング |
| US12366769B2 (en) | 2017-12-20 | 2025-07-22 | Magic Leap, Inc. | Insert for augmented reality viewing device |
| US12472007B2 (en) | 2019-11-15 | 2025-11-18 | Magic Leap, Inc. | Viewing system for use in a surgical environment |
| US12498581B2 (en) | 2018-12-21 | 2025-12-16 | Magic Leap, Inc. | Air pocket structures for promoting total internal reflection in a waveguide |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050156353A1 (en) * | 2004-01-15 | 2005-07-21 | Watts Michael P. | Method to improve the flow rate of imprinting material |
| WO2007144453A1 (en) | 2006-06-13 | 2007-12-21 | Braggone Oy | Carbosilane polymer compositions for anti-reflective coatings |
| US8431670B2 (en) * | 2009-08-31 | 2013-04-30 | International Business Machines Corporation | Photo-patternable dielectric materials and formulations and methods of use |
| US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
| KR101432607B1 (ko) | 2011-08-11 | 2014-08-21 | 제일모직주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법 |
| US9348228B2 (en) | 2013-01-03 | 2016-05-24 | Globalfoundries Inc. | Acid-strippable silicon-containing antireflective coating |
| US10170297B2 (en) * | 2013-08-22 | 2019-01-01 | Versum Materials Us, Llc | Compositions and methods using same for flowable oxide deposition |
| KR101780977B1 (ko) | 2014-06-24 | 2017-10-23 | (주)디엔에프 | 실리콘 전구체, 이의 제조방법 및 이를 이용한 실리콘함유 유전막의 제조방법 |
| JP6578353B2 (ja) * | 2014-09-23 | 2019-09-18 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | Ｓｉ含有膜堆積用カルボシラン置換アミン前駆体及びその方法 |
| TWI706957B (zh) | 2015-03-30 | 2020-10-11 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 碳矽烷與氨、胺類及脒類之觸媒去氫耦合 |
| US10544329B2 (en) | 2015-04-13 | 2020-01-28 | Honeywell International Inc. | Polysiloxane formulations and coatings for optoelectronic applications |
| TWI753794B (zh) | 2016-03-23 | 2022-01-21 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 形成含矽膜之組成物及其製法與用途 |
| US10186424B2 (en) * | 2017-06-14 | 2019-01-22 | Rohm And Haas Electronic Materials Llc | Silicon-based hardmask |
| US10604618B2 (en) | 2018-06-20 | 2020-03-31 | Shin-Etsu Chemical Co., Ltd. | Compound, method for manufacturing the compound, and composition for forming organic film |
| JP7421551B2 (ja) * | 2018-10-03 | 2024-01-24 | バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー | ケイ素及び窒素を含有する膜を製造するための方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005048152A (ja) * | 2002-12-24 | 2005-02-24 | Shin Etsu Chem Co Ltd | 高分子化合物、反射防止膜材料及びパターン形成方法 |
| JP2005070776A (ja) * | 2003-08-22 | 2005-03-17 | Internatl Business Mach Corp <Ibm> | 反射防止ハードマスク組成物とそれを用いた半導体デバイスの製造方法 |
| WO2006134205A1 (en) * | 2005-06-13 | 2006-12-21 | Silecs Oy | Method for producing a polymer for semiconductor optoelectronics comprising polymerizing functionalized silane monomers with bridging hydrocarbon group |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2603590B1 (fr) * | 1986-02-25 | 1991-05-24 | Kansai Paint Co Ltd | Procede de preparation d'une resine contenant un polysiloxane |
| JP2718620B2 (ja) * | 1993-09-01 | 1998-02-25 | 東芝シリコーン株式会社 | ポリオルガノシランの製造方法 |
| DE69511442T2 (de) * | 1994-02-28 | 2000-04-13 | Toshiba Silicone Co., Ltd. | Verfahren zur Herstellung von Polyorganosilan |
| US5607824A (en) * | 1994-07-27 | 1997-03-04 | International Business Machines Corporation | Antireflective coating for microlithography |
| JP4096138B2 (ja) * | 1999-04-12 | 2008-06-04 | Ｊｓｒ株式会社 | レジスト下層膜用組成物の製造方法 |
| EP1058274B1 (en) * | 1999-06-04 | 2005-07-27 | JSR Corporation | Composition for film formation and material for insulating film formation |
| US6841256B2 (en) * | 1999-06-07 | 2005-01-11 | Honeywell International Inc. | Low dielectric constant polyorganosilicon materials generated from polycarbosilanes |
| JP3951124B2 (ja) * | 2002-12-06 | 2007-08-01 | Ｊｓｒ株式会社 | 絶縁膜 |
| US8053159B2 (en) * | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
| US20050214674A1 (en) * | 2004-03-25 | 2005-09-29 | Yu Sui | Positive-working photoimageable bottom antireflective coating |
| JP4491283B2 (ja) * | 2004-06-10 | 2010-06-30 | 信越化学工業株式会社 | 反射防止膜形成用組成物を用いたパターン形成方法 |
| JP4355939B2 (ja) * | 2004-07-23 | 2009-11-04 | Ｊｓｒ株式会社 | 半導体装置の絶縁膜形成用組成物およびシリカ系膜の形成方法 |
| JP2008511711A (ja) * | 2004-08-31 | 2008-04-17 | シレクス オサケユキチュア | 新規ポリオルガノシロキサン誘電体 |
| JP4756128B2 (ja) * | 2004-10-20 | 2011-08-24 | 日揮触媒化成株式会社 | 半導体加工用保護膜形成用塗布液、その調製方法およびこれより得られる半導体加工用保護膜 |
| EP1691238A3 (en) * | 2005-02-05 | 2009-01-21 | Rohm and Haas Electronic Materials, L.L.C. | Coating compositions for use with an overcoated photoresist |
| WO2007144453A1 (en) * | 2006-06-13 | 2007-12-21 | Braggone Oy | Carbosilane polymer compositions for anti-reflective coatings |
| JP2010519398A (ja) * | 2007-02-27 | 2010-06-03 | エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション | ケイ素に基づく反射防止膜用組成物 |
-
2008
- 2008-11-06 TW TW097142886A patent/TWI452069B/zh not_active IP Right Cessation
- 2008-11-06 US US12/741,708 patent/US8765899B2/en not_active Expired - Fee Related
- 2008-11-06 JP JP2010532631A patent/JP2011504522A/ja active Pending
- 2008-11-06 EP EP08848270A patent/EP2209839A1/en not_active Withdrawn
- 2008-11-06 WO PCT/FI2008/050637 patent/WO2009060125A1/en not_active Ceased
-
2014
- 2014-03-03 JP JP2014040694A patent/JP5902216B2/ja not_active Expired - Fee Related
- 2014-05-05 US US14/269,697 patent/US9158195B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005048152A (ja) * | 2002-12-24 | 2005-02-24 | Shin Etsu Chem Co Ltd | 高分子化合物、反射防止膜材料及びパターン形成方法 |
| JP2005070776A (ja) * | 2003-08-22 | 2005-03-17 | Internatl Business Mach Corp <Ibm> | 反射防止ハードマスク組成物とそれを用いた半導体デバイスの製造方法 |
| WO2006134205A1 (en) * | 2005-06-13 | 2006-12-21 | Silecs Oy | Method for producing a polymer for semiconductor optoelectronics comprising polymerizing functionalized silane monomers with bridging hydrocarbon group |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021505932A (ja) * | 2017-12-07 | 2021-02-18 | サムスン エスディアイ カンパニー, リミテッドSamsung Sdi Co., Ltd. | 色変換パネルおよび色変換パネルの製造方法 |
| US11781038B2 (en) | 2017-12-07 | 2023-10-10 | Samsung Sdi Co., Ltd. | Color conversion panel and manufacturing method thereof |
| JP2024019711A (ja) * | 2017-12-10 | 2024-02-09 | マジック リープ， インコーポレイテッド | 光学導波管上の反射防止性コーティング |
| US12366769B2 (en) | 2017-12-20 | 2025-07-22 | Magic Leap, Inc. | Insert for augmented reality viewing device |
| US12498581B2 (en) | 2018-12-21 | 2025-12-16 | Magic Leap, Inc. | Air pocket structures for promoting total internal reflection in a waveguide |
| US12472007B2 (en) | 2019-11-15 | 2025-11-18 | Magic Leap, Inc. | Viewing system for use in a surgical environment |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5902216B2 (ja) | 2016-04-13 |
| US9158195B2 (en) | 2015-10-13 |
| JP2014139319A (ja) | 2014-07-31 |
| EP2209839A1 (en) | 2010-07-28 |
| TWI452069B (zh) | 2014-09-11 |
| WO2009060125A1 (en) | 2009-05-14 |
| TW200940608A (en) | 2009-10-01 |
| US20140239516A1 (en) | 2014-08-28 |
| US20100252917A1 (en) | 2010-10-07 |
| US8765899B2 (en) | 2014-07-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5902216B2 (ja) | 反射防止コーティング用カルボシランポリマー組成物 | |
| US9051491B2 (en) | Carbosilane polymer compositions for anti-reflective coatings | |
| US9284455B2 (en) | Hybrid inorganic-organic polymer compositions for anti-reflective coatings | |
| TWI238174B (en) | Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography | |
| US7833696B2 (en) | Method for forming anti-reflective coating | |
| KR100962388B1 (ko) | 내에칭성 디실란 및 포화 탄화수소 가교결합된 실리콘 함유폴리머, 그 제조 방법 및 그 사용 방법 | |
| EP2250213A2 (en) | Silsesquioxane resins | |
| KR20100117581A (ko) | 실록산계 수지 조성물 | |
| JP2010519398A (ja) | ケイ素に基づく反射防止膜用組成物 | |
| CN101790704B (zh) | 光刻用形成抗蚀剂下层膜的组合物和半导体装置的制造方法 | |
| KR102266587B1 (ko) | 수지 조성물, 그 경화막과 그 제조방법, 및 고체촬상소자 | |
| KR20150081269A (ko) | 에스테르기를 갖는 실리콘함유 레지스트 하층막 형성조성물 | |
| JP2014512423A (ja) | 反射防止コーティング用のポリシランシロキサン樹脂 | |
| KR20150097550A (ko) | 환상 디에스테르기를 갖는 실리콘 함유 레지스트 하층막 형성 조성물 | |
| US8025927B2 (en) | Method for forming anti-reflective coating | |
| KR101400182B1 (ko) | 포토레지스트 하층막용 조성물 및 이를 이용하는 반도체 소자의 제조 방법 | |
| KR20210084595A (ko) | 수지 조성물, 감광성 수지 조성물, 경화막, 경화막의 제조 방법, 패턴 경화막 및 패턴 경화막의 제작 방법 | |
| JP2011173738A (ja) | 透明焼成体 | |
| EP1989593A2 (en) | Antireflective coating material | |
| CN103460135B (zh) | 用于设备制造的可曝光成像和可显影的倍半硅氧烷树脂 | |
| US8653217B2 (en) | Method for forming anti-reflective coating | |
| CN115220303A (zh) | 感光性树脂组合物以及包含其的显示装置 | |
| TW202334286A (zh) | 高折射率光阻組成物 | |
| TW202515941A (zh) | 含有支鏈狀有機聚矽氧烷之組成物及其用途 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111017 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20111017 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130828 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130903 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20131203 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20131210 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20140422 |