JP2011501430A - 回折格子を用いたレーザー干渉リソグラフィー方法 - Google Patents
回折格子を用いたレーザー干渉リソグラフィー方法 Download PDFInfo
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- 238000000025 interference lithography Methods 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 39
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- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 26
- 230000003252 repetitive effect Effects 0.000 claims abstract description 14
- 239000012530 fluid Substances 0.000 claims description 6
- 238000001459 lithography Methods 0.000 description 9
- 238000007654 immersion Methods 0.000 description 7
- 239000004698 Polyethylene Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229920000573 polyethylene Polymers 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
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- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000000671 immersion lithography Methods 0.000 description 2
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/0025—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration
- G02B27/0037—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration with diffracting elements
- G02B27/0043—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration with diffracting elements in projection exposure systems, e.g. microlithographic systems
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
- G02B27/4205—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive optical element [DOE] contributing to image formation, e.g. whereby modulation transfer function MTF or optical aberrations are relevant
- G02B27/4222—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive optical element [DOE] contributing to image formation, e.g. whereby modulation transfer function MTF or optical aberrations are relevant in projection exposure systems, e.g. photolithographic systems
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1814—Diffraction gratings structurally combined with one or more further optical elements, e.g. lenses, mirrors, prisms or other diffraction gratings
- G02B5/1819—Plural gratings positioned on the same surface, e.g. array of gratings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1809—Diffraction gratings with pitch less than or comparable to the wavelength
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1814—Diffraction gratings structurally combined with one or more further optical elements, e.g. lenses, mirrors, prisms or other diffraction gratings
Abstract
【選択図】 図4
Description
以下、実験例によって本発明をより詳しく説明するが、下記の実験例は例示に過ぎず、本発明の範囲が実験例によって限定されることはない。
10 レーザー光源
20 反射鏡
30 ビームエクスパンダー
40 リソグラフィー対象体
41 ワーク基板
42 フォトレジスト層
43 屈折率整合物質層
44 回折格子層
45 有機基板
46 BARC
47 繰返し格子パターン
Claims (10)
- (a)繰返し微細パターンを形成するワーク基板上にフォトレジスト層を形成する段階と、
(b)前記フォトレジスト層上に屈折率整合物質層を形成する段階と、
(c)前記屈折率整合物質層上に回折格子の周期がλ/ngからλ/n0(λはレーザー光の波長、ngは回折格子の屈折率、n0は空気または真空の屈折率)の範囲内にある回折格子層を形成する段階と、
(d)垂直レーザー光を前記回折格子層に入射させ、絶対値の同じ正と負の回折光の相互干渉によって前記フォトレジスト層を露光させる段階と、を含むことを特徴とする回折格子を用いたレーザー干渉リソグラフィー方法。 - 前記(d)段階は、+1次回折光と−1次回折光との相互干渉によって前記フォトレジスト層を露光させる段階であることを特徴とする請求項1に記載の回折格子を用いたレーザー干渉リソグラフィー方法。
- 前記(b)段階において、前記屈折率整合物質層はインデックスマッチング流体層であることを特徴とする請求項1に記載の回折格子を用いたレーザー干渉リソグラフィー方法。
- 前記屈折率整合物質層は、回折格子層とフォトレジスト層との間の境界で回折光の反射を防止できる屈折率を持つことを特徴とする請求項1または請求項3に記載の回折格子を用いたレーザー干渉リソグラフィー方法。
- 前記屈折率整合物質層は、回折格子層またはフォトレジスト層と同じ屈折率を持つことを特徴とする請求項1または請求項3に記載の回折格子を用いたレーザー干渉リソグラフィー方法。
- 前記ワーク基板とフォトレジスト層との間にBARC(Bottom Anti Reflection Coater)を形成する段階をさらに含むことを特徴とする請求項1に記載の回折格子を用いたレーザー干渉リソグラフィー方法。
- 前記回折格子層は、ブラッグ(Bragg)格子層であることを特徴とする請求項1に記載の回折格子を用いたレーザー干渉リソグラフィー方法。
- 前記回折格子層は、
有機基板と、
前記有機基板上に形成されたBARCと、
前記BARC上に形成された繰返し格子パターンと、を含むことを特徴とする請求項1に記載の回折格子を用いたレーザー干渉リソグラフィー方法。 - 前記フォトレジスト層は、i‐line系列のフォトレジスト層またはDUV(Deep Ultra Violet)系列のフォトレジスト層であることを特徴とする請求項1に記載の回折格子を用いたレーザー干渉リソグラフィー方法。
- 前記回折格子層の格子パターンの断面は、長方形、台形、または三角形であることを特徴とする請求項1に記載の回折格子を用いたレーザー干渉リソグラフィー方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2007-0104584 | 2007-10-17 | ||
KR1020070104584A KR100963036B1 (ko) | 2007-10-17 | 2007-10-17 | 회절 격자를 이용한 레이저 간섭 리소그래피 방법 |
PCT/KR2008/005892 WO2009051366A1 (en) | 2007-10-17 | 2008-10-08 | Method for laser interference lithography using diffraction grating |
Publications (2)
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JP2011501430A true JP2011501430A (ja) | 2011-01-06 |
JP5014490B2 JP5014490B2 (ja) | 2012-08-29 |
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JP2010529849A Active JP5014490B2 (ja) | 2007-10-17 | 2008-10-08 | 回折格子を用いたレーザー干渉リソグラフィー方法 |
Country Status (5)
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US (1) | US8399184B2 (ja) |
JP (1) | JP5014490B2 (ja) |
KR (1) | KR100963036B1 (ja) |
CN (1) | CN101828140B (ja) |
WO (1) | WO2009051366A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10732506B2 (en) | 2017-09-26 | 2020-08-04 | Samsung Electronics Co., Ltd. | Method of fabricating integrated circuit devices |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8524443B2 (en) * | 2010-07-07 | 2013-09-03 | Eulitha A.G. | Method and apparatus for printing a periodic pattern with a large depth of focus |
CN101975976B (zh) * | 2010-08-30 | 2015-03-04 | 北京工业大学 | 基于金属纳米颗粒的光子晶体微纳结构直写方法 |
KR101478020B1 (ko) * | 2013-09-16 | 2015-01-05 | 서긍석 | 스윙 궤도 교정 기능을 갖는 골프용 라인 표시장치 |
KR102421771B1 (ko) | 2015-07-06 | 2022-07-18 | 삼성디스플레이 주식회사 | 이방성 도전 필름 및 그 제조방법 |
CN106896435B (zh) * | 2017-02-22 | 2019-10-18 | 诸暨市霞伟花木场 | 光栅膜制作方法、装置及系统 |
US10914944B1 (en) * | 2018-07-24 | 2021-02-09 | Facebook Technologies, Llc | Anti-refraction cancelling prism for multi-beam interference lithography exposure |
US11036145B2 (en) | 2018-12-21 | 2021-06-15 | Applied Materials, Inc. | Large area self imaging lithography based on broadband light source |
CN113009609A (zh) * | 2021-03-01 | 2021-06-22 | 苏州大学 | 体光栅标定组件、体光栅的制备装置、标定方法和曝光方法 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06140300A (ja) * | 1992-10-26 | 1994-05-20 | Hitachi Ltd | 露光方法 |
JPH10161295A (ja) * | 1996-03-18 | 1998-06-19 | Matsushita Electric Ind Co Ltd | 露光装置 |
WO1999059035A1 (en) * | 1998-05-14 | 1999-11-18 | Optical Switch Corporation | Holographic patterning method and tool employing prism coupling |
JP2000310705A (ja) * | 1999-03-31 | 2000-11-07 | Matsushita Electric Ind Co Ltd | 回折格子を形成する方法および装置 |
WO2001035168A1 (en) * | 1999-11-10 | 2001-05-17 | Massachusetts Institute Of Technology | Interference lithography utilizing phase-locked scanning beams |
WO2006075720A1 (ja) * | 2005-01-14 | 2006-07-20 | Nikon Corporation | 露光方法および装置、ならびに電子デバイス製造方法 |
JP2006330085A (ja) * | 2005-05-23 | 2006-12-07 | Matsushita Electric Ind Co Ltd | 微細構造を有する部材の製造方法、およびその製造方法に用いる露光方法 |
JP2006339600A (ja) * | 2005-06-06 | 2006-12-14 | Nikon Corp | 露光方法及び装置、並びに電子デバイス製造方法 |
JP2007073546A (ja) * | 2005-09-02 | 2007-03-22 | Nikon Corp | 露光方法及び装置、並びにデバイス製造方法 |
JP2007116016A (ja) * | 2005-10-24 | 2007-05-10 | Seiko Epson Corp | 回折光学素子、パターン形成装置、およびパターン形成方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5413884A (en) * | 1992-12-14 | 1995-05-09 | American Telephone And Telegraph Company | Grating fabrication using electron beam lithography |
KR100227179B1 (ko) * | 1997-04-11 | 1999-10-15 | 박호군 | 고품질 반사형 홀로그래픽 광학 소자 제작 장치 |
EP0930549A1 (en) | 1998-01-13 | 1999-07-21 | Holtronic Technologies Limited | Optic for a total internal reflection (TIR) holographic system |
US6185919B1 (en) * | 1999-07-21 | 2001-02-13 | Johnson Farm Machinery Co., Inc. | Apparatus and method for removing plant stalks from a field and shredding the plant stalks |
US7088877B2 (en) * | 2001-06-13 | 2006-08-08 | Intel Corporation | Method and apparatus for tuning a bragg grating in a semiconductor substrate |
CN101833247B (zh) * | 2004-06-04 | 2013-11-06 | 卡尔蔡司Smt有限责任公司 | 微光刻投影曝光系统的投影物镜的光学测量的测量系统 |
JP4357514B2 (ja) * | 2006-09-29 | 2009-11-04 | 株式会社東芝 | 液浸露光方法 |
CN1945439A (zh) | 2006-11-08 | 2007-04-11 | 中国科学院电工研究所 | 一种消色差浸没干涉成像光刻系统 |
-
2007
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- 2008-10-08 WO PCT/KR2008/005892 patent/WO2009051366A1/en active Application Filing
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Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06140300A (ja) * | 1992-10-26 | 1994-05-20 | Hitachi Ltd | 露光方法 |
JPH10161295A (ja) * | 1996-03-18 | 1998-06-19 | Matsushita Electric Ind Co Ltd | 露光装置 |
WO1999059035A1 (en) * | 1998-05-14 | 1999-11-18 | Optical Switch Corporation | Holographic patterning method and tool employing prism coupling |
JP2000310705A (ja) * | 1999-03-31 | 2000-11-07 | Matsushita Electric Ind Co Ltd | 回折格子を形成する方法および装置 |
WO2001035168A1 (en) * | 1999-11-10 | 2001-05-17 | Massachusetts Institute Of Technology | Interference lithography utilizing phase-locked scanning beams |
WO2006075720A1 (ja) * | 2005-01-14 | 2006-07-20 | Nikon Corporation | 露光方法および装置、ならびに電子デバイス製造方法 |
JP2006330085A (ja) * | 2005-05-23 | 2006-12-07 | Matsushita Electric Ind Co Ltd | 微細構造を有する部材の製造方法、およびその製造方法に用いる露光方法 |
JP2006339600A (ja) * | 2005-06-06 | 2006-12-14 | Nikon Corp | 露光方法及び装置、並びに電子デバイス製造方法 |
JP2007073546A (ja) * | 2005-09-02 | 2007-03-22 | Nikon Corp | 露光方法及び装置、並びにデバイス製造方法 |
JP2007116016A (ja) * | 2005-10-24 | 2007-05-10 | Seiko Epson Corp | 回折光学素子、パターン形成装置、およびパターン形成方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10732506B2 (en) | 2017-09-26 | 2020-08-04 | Samsung Electronics Co., Ltd. | Method of fabricating integrated circuit devices |
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US8399184B2 (en) | 2013-03-19 |
US20100279233A1 (en) | 2010-11-04 |
KR100963036B1 (ko) | 2010-06-14 |
CN101828140B (zh) | 2012-05-23 |
JP5014490B2 (ja) | 2012-08-29 |
WO2009051366A1 (en) | 2009-04-23 |
KR20090039126A (ko) | 2009-04-22 |
CN101828140A (zh) | 2010-09-08 |
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