JP2011249484A - Method of manufacturing semiconductor device, and semiconductor device - Google Patents

Method of manufacturing semiconductor device, and semiconductor device Download PDF

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Publication number
JP2011249484A
JP2011249484A JP2010119855A JP2010119855A JP2011249484A JP 2011249484 A JP2011249484 A JP 2011249484A JP 2010119855 A JP2010119855 A JP 2010119855A JP 2010119855 A JP2010119855 A JP 2010119855A JP 2011249484 A JP2011249484 A JP 2011249484A
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Japan
Prior art keywords
resin
semiconductor device
manufacturing
mold
resin layer
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JP2010119855A
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Japanese (ja)
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Tetsuo Ito
哲夫 伊東
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Panasonic Corp
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Panasonic Corp
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Priority to JP2010119855A priority Critical patent/JP2011249484A/en
Priority to PCT/JP2010/006846 priority patent/WO2011148441A1/en
Publication of JP2011249484A publication Critical patent/JP2011249484A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/16—Making multilayered or multicoloured articles
    • B29C45/1671—Making multilayered or multicoloured articles with an insert
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
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  • Engineering & Computer Science (AREA)
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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Light Receiving Elements (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that enables easy and low-cost manufacturing of a compact semiconductor device with a high sensor sensitivity.SOLUTION: The method is for manufacturing a semiconductor device 100 comprising a circuit board 101, a semiconductor element 102 having a sensor function region 103, a resin 106 covering the sensor function region 103, and a sealing resin 107. The manufacturing method comprises: a circuit board holding step of allowing the circuit board 101 on which the semiconductor device 102 is mounted to be held on an upper mold 104; a resin holding step of forming a part of a first resin material in a pillar shape and holding the resin; a resin forming step of forming a first resin layer by clamping the upper mold 104 and a lower mold 105, after the circuit board holding step and the resin holding step, so that the sensor function region 103 is in contact with the first resin material formed in a pillar shape; and a sealing-resin forming step of forming a second resin layer by filling a second resin material in a space between the upper mold 104 and the lower mold 105.

Description

本発明は、半導体装置の製造方法及び半導体装置に関し、特に、配線を有する配線基板と、配線基板上に搭載され、表面にセンサ機能領域を有する半導体素子を有する半導体装置の製造方法と半導体装置に関する。   The present invention relates to a semiconductor device manufacturing method and a semiconductor device, and more particularly, to a semiconductor device manufacturing method and a semiconductor device having a wiring substrate having wiring, and a semiconductor element mounted on the wiring substrate and having a sensor functional region on the surface. .

近年、ＣＤ（コンパクトディスク）、ＤＶＤ（Ｄｅｇｉｔａｌ Ｖｅｒｓａｔｉｌｅ Ｄｉｓｋ）といった光ディスクの記録密度を高めるべく、情報の記録再生のためのレーザー光として波長が４０５ｎｍと短い青紫色レーザーを用いた光ディスク装置が商品化されている。   In recent years, in order to increase the recording density of optical discs such as CDs (compact discs) and DVDs (Digital Versatile Disks), optical disc apparatuses using a blue-violet laser with a short wavelength of 405 nm as a laser beam for recording and reproducing information have been commercialized. ing.

センサ機能領域として光学機能領域を搭載した半導体素子を配線基板に搭載した半導体製造装置は、配線基板を刳り貫いた領域に半導体素子を実装し、例えば受光機能あるいは発光機能を備えた光学機能領域を露出させた構造やその刳り貫き領域に透明樹脂を塗布した構造の半導体装置（例えば、特許文献１、２、３参照）や光学機能領域を保護するために、光学機能領域の上方に光透過性基板を配置した中空のパッケージ構造（例えば、特許文献４参照）であった。   A semiconductor manufacturing apparatus in which a semiconductor element having an optical function area as a sensor function area is mounted on a wiring board has a semiconductor element mounted in an area that penetrates the wiring board, for example, an optical function area having a light receiving function or a light emitting function. In order to protect a semiconductor device (for example, see Patent Documents 1, 2, and 3) having a structure in which a transparent resin is applied to an exposed structure or a penetrating area and an optical function area, the light transmission is provided above the optical function area. It was a hollow package structure (for example, refer to Patent Document 4) in which a substrate is arranged.

ところが、光学機能領域を露出させた構造では半導体装置の製造過程や半導体装置を光ディスク装置に設置する時に光学機能領域上に埃などの異物が付着することにより受光機能あるいは発光機能を阻害するという課題や、半導体素子と配線基板の電極部とを接続する箇所も露出しているため異物が付着することによりショート不良が発生するという課題があり、それらを避けるため無塵環境を整えるための設備が膨大なコストとなる。   However, in the structure in which the optical function area is exposed, there is a problem that the light receiving function or the light emitting function is hindered by foreign matters such as dust adhering to the optical function area when the semiconductor device is manufactured or the semiconductor device is installed in the optical disk device. In addition, there is also a problem that short-circuit failure occurs due to foreign matter adhering because the part connecting the semiconductor element and the electrode part of the wiring board is exposed, and there is a facility for preparing a dust-free environment to avoid them Enormous cost.

配線基板を刳り貫いた領域に透明樹脂を塗布する構造の場合、例えば４０５ｎｍという短波長の青紫色レーザー光を受光あるいは発光させようとすると、多くの透明樹脂はレーザー光のエネルギーによって経時的に樹脂分子鎖が分解する。その結果、透明樹脂が変色し、透過率が変化してしまうため使用することができなかった。しかしながら近年、材料開発が進展し、レーザー光の受光あるいは発光による経時的な変色の速度が遅く、変色し難いという第１の性質を備えた透明樹脂が開発されてきた。   In the case of a structure in which a transparent resin is applied to a region penetrating the wiring board, for example, when trying to receive or emit blue-violet laser light having a short wavelength of 405 nm, many transparent resins are resinated over time by the energy of the laser light. Molecular chains break down. As a result, the transparent resin was discolored and the transmittance was changed, so that it could not be used. However, in recent years, the development of materials has progressed, and transparent resins having the first property that the rate of discoloration over time due to the reception or emission of laser light is slow and difficult to discolor have been developed.

しかしながら、透明樹脂は、第２の性質として硬化収縮が大きいという性質を有する。よって、特許文献３記載のように全体を透明樹脂で封止する半導体装置では、透明樹脂の反りが大きくなり実装不良やその応力によるチップ破壊が発生する。   However, the transparent resin has a property that the curing shrinkage is large as a second property. Therefore, in a semiconductor device in which the whole is sealed with a transparent resin as described in Patent Document 3, the warping of the transparent resin becomes large, resulting in defective mounting and chip breakage due to the stress.

そのうえ、配線基板と半導体素子の接続部が透明樹脂で覆われている場合、透明樹脂の収縮が原因で接続部が断線してしまう。   In addition, when the connection portion between the wiring board and the semiconductor element is covered with the transparent resin, the connection portion is disconnected due to the shrinkage of the transparent resin.

また特許文献１記載のように、配線基板を刳り貫いた領域に半導体素子を実装し、その刳り貫いた領域に透明樹脂を塗布する形態においても透明樹脂が占める体積の割合が高いため、反りが大きくなる。   In addition, as described in Patent Document 1, a semiconductor element is mounted in a region penetrating the wiring board, and the transparent resin is applied to the penetrating region, the ratio of the volume occupied by the transparent resin is high. growing.

なお、配線基板上に半導体素子を複数個搭載して一括封止成形した後にダイシングで個片に裁断する工法が一般的であるが、この場合配線基板面積が大きくなるため、反り量はより大きくなってしまう。ダイシングで個片に裁断する方法において位置ズレが生じる原因となる。   In general, a method of mounting a plurality of semiconductor elements on a wiring board, batch molding and then cutting into individual pieces by dicing is performed, but in this case the wiring board area increases, so the amount of warpage is larger. turn into. This is a cause of misalignment in the method of cutting into individual pieces by dicing.

また、透明樹脂は、第３の性質として接着力が弱いという性質を有する。したがって、配線基板、半導体素子、封止樹脂と透明樹脂との接触面積が大きいほど剥離が発生しやすくなるため、特許文献１及び３記載の構造では剥離が原因となる実装不良や接続不良も発生する。   In addition, the transparent resin has a property that adhesive strength is weak as a third property. Therefore, the larger the contact area between the wiring board, the semiconductor element, and the sealing resin and the transparent resin, the easier it is for the separation to occur. Therefore, the structures described in Patent Documents 1 and 3 also cause mounting failures and connection failures that cause separation. To do.

特許文献１及び３記載の構造では透明樹脂を塗布する領域は、配線基板側の端面の面積がその対向する面よりも面積が大きく、かつ、側面がテーパーになる。そのため、透明樹脂に大きな応力負荷がかかると透明樹脂の離脱に至る。   In the structures described in Patent Documents 1 and 3, the area where the transparent resin is applied has a larger area on the end face on the wiring board side than the opposing face, and the side faces are tapered. Therefore, when a large stress load is applied to the transparent resin, the transparent resin is detached.

またこの透明樹脂は、第４の性質として弾性率が高いという性質を有する。このため、上記のように半導体素子を透明樹脂で一括封止した後、ダイシングにて個片に裁断する場合、透明樹脂の裁断面積が大きいと半導体装置の端面にバリやダレが発生してしまう。   Moreover, this transparent resin has a property that the elastic modulus is high as a fourth property. For this reason, when the semiconductor elements are collectively sealed with a transparent resin as described above and then cut into individual pieces by dicing, burrs and sagging occur on the end face of the semiconductor device if the cut cross-sectional area of the transparent resin is large. .

また透明樹脂を塗布する工程では、透明樹脂の天面が曲率を持った凸凹状に形成されることにより、透明樹脂の天面に入射した光が屈折する。よって、光学機能を果たさなくなる。そのため、光学機能を果たすように透明樹脂の天面を研磨する必要があり、膨大な装置が必要となり製造方法が複雑になってしまい製造コストが高くなる。   Further, in the step of applying the transparent resin, the light incident on the top surface of the transparent resin is refracted by forming the top surface of the transparent resin in a convex-concave shape having a curvature. Therefore, the optical function is not fulfilled. For this reason, it is necessary to polish the top surface of the transparent resin so as to perform an optical function, which requires an enormous apparatus, complicates the manufacturing method, and increases the manufacturing cost.

また前記透明樹脂のコストは高いため、その体積を極力少なくしなければ製造コストが高くなるといった課題もある。   Further, since the cost of the transparent resin is high, there is a problem that the manufacturing cost increases unless the volume is reduced as much as possible.

ところで、光学機能領域を保護するために、光学機能領域の上方に光透過性基板を配置した中空のパッケージ構造では、光透過性基板として特殊なコーティングを施したガラス板のみを用いれば透過率の変化は生じず、光学機能領域上の異物付着を抑制することができる。しかしながら、ガラス板を配置するための接着材の成分が短波長レーザー光によって変色するため受光あるいは発光機能を阻害するという課題や、特殊なコーティングを施したガラス板は非常に高価であるためコストが大きくなるという課題がある。また、ガラス板取りつけ領域が必要なため半導体装置を小型化するのは困難である。   By the way, in order to protect the optical function area, in a hollow package structure in which a light-transmitting substrate is disposed above the optical function area, the transmittance can be improved by using only a glass plate with a special coating as the light-transmitting substrate. There is no change, and adhesion of foreign matter on the optical function area can be suppressed. However, since the components of the adhesive for arranging the glass plate are discolored by the short wavelength laser light, the problem of blocking the light receiving or light emitting function, and the glass plate with a special coating are very expensive, so the cost is low. There is a problem of becoming larger. In addition, it is difficult to reduce the size of the semiconductor device because a glass plate mounting area is required.

また刳り貫き領域を加工するためには掘削加工するため半導体装置が小型化すると加工精度が劣ってしまう。もしくは加工時間が長くなるため製造コストが高くなる。   Further, in order to process the punched-out region, excavation is performed, so that the processing accuracy is inferior when the semiconductor device is downsized. Or, since the processing time becomes longer, the manufacturing cost becomes higher.

他に、光学機能領域上方にのみ刳り貫き領域を設けた半導体装置では、刳り貫き領域を設けるその他の方法として光学機能領域の外周を包囲する包囲溝をフォトリソグラフィー技術で形成し、光学機能領域と包囲溝の上面を樹脂フィルムで被覆し、光学機能領域に対向する面を凸状に加工した金型で樹脂フィルムをクランプし封止樹脂で封止するといった方法が知られている。しかしながら、この方法では膨大な装置が必要となり製造方法が複雑になってしまうという問題がある。また樹脂フィルムは高価であるため製造コストも高くなる。加えて、前記樹脂フィルムを用いて刳り貫き領域を形成する場合、小さな刳り貫き領域を形成することは不可能である。   In addition, in a semiconductor device in which a punched-out region is provided only above the optical functional region, as another method of providing the punched-out region, a surrounding groove that surrounds the outer periphery of the optical functional region is formed by a photolithography technique. A method is known in which the upper surface of the enclosing groove is covered with a resin film, the resin film is clamped with a mold in which the surface facing the optical functional area is processed into a convex shape, and sealed with a sealing resin. However, this method has a problem that an enormous apparatus is required and the manufacturing method becomes complicated. Further, since the resin film is expensive, the manufacturing cost is increased. In addition, when forming a punching region using the resin film, it is impossible to form a small punching region.

上述したいずれの加工方法においても刳り貫き領域は光学機能領域側の面が、それと対向する面よりも面積が小さくなってしまう。そのため刳り貫き領域の側面は、光学機能領域側の面から、光学機能領域側の面に対向する面に開く角度を有することになる。言い換えると、刳り貫き領域は、半導体装置の厚さ方向の断面積が、光学機能領域側からに半導体装置の表面（光学機能領域側の面に対向する面）へ向かって徐々に増加する。そのため、受光する光信号は、この側面に反射して誤反応の原因となる。また発光する場合は側面で光が反射するため発光輝度ムラの原因となるという課題がある。   In any of the processing methods described above, the surface of the punched-out region is smaller than the surface facing the optical functional region. Therefore, the side surface of the punching region has an angle that opens from the surface on the optical function region side to the surface facing the surface on the optical function region side. In other words, the cross-sectional area in the thickness direction of the semiconductor device gradually increases from the optical function region side toward the surface of the semiconductor device (a surface facing the surface on the optical function region side). Therefore, the received optical signal is reflected on this side surface and causes a false reaction. In addition, when light is emitted, light is reflected from the side surface, which causes a problem of uneven luminance.

加えて、複数の光学機能領域が半導体装置に備えられている場合、刳り貫き領域は光学機能領域側の面の面積が、それと対向する面の面積よりも面積が小さくなってしまう。ゆえに、複数の光学機能領域の距離を近くに配置すると、それぞれに形成される刳り貫き穴は重なってしまうことになり、受光する光信号も干渉し誤反応を引き起こすという課題がある。   In addition, when a plurality of optical function regions are provided in the semiconductor device, the surface area of the punched-out region is smaller than the area of the surface facing the optical function region side. Therefore, if the distances between the plurality of optical function areas are arranged close to each other, the punched holes formed in each of them overlap, and there is a problem that the received optical signal also interferes and causes a false reaction.

特開２００６−３２５６６号公報JP 2006-32566 A 特開２００９−１５２２９９号公報JP 2009-152299 A 特開２００３−１７７１５号公報JP 2003-17715 A 特開２００９−２３９１０６号公報JP 2009-239106 A

本発明は上記の課題を解決するためのものであり、小型かつセンサ感度の高い半導体装置を簡単かつ低コストで製造できる半導体装置の製造方法を提供することを目的とする。また、簡単かつ低コストで製造でき、小型かつセンサ感度の高い半導体装置を提供することも本発明の目的である。   The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a method of manufacturing a semiconductor device that can easily and inexpensively manufacture a small-sized semiconductor device with high sensor sensitivity. It is another object of the present invention to provide a semiconductor device that can be manufactured easily and at low cost, is small, and has high sensor sensitivity.

上記の課題を解決するために、本発明に係る半導体装置の製造方法は、配線を有する配線基板と、前記配線基板上に搭載され、表面に前記配線と電気的に接続されたセンサ機能領域を有する少なくとも１つの半導体素子と、前記少なくとも１つの半導体素子上に設けられ、前記センサ機能領域を覆う第１樹脂層と、前記少なくとも１つの半導体素子を封止する第２樹脂層とを備える半導体装置の製造方法であって、表面に前記少なくとも１つの半導体素子が搭載された前記配線基板の裏面が第１の金型に接するように、前記第１の金型に前記配線基板を保持させる基板保持工程と、前記第１樹脂層の材料である第１樹脂材料であって、少なくとも一部が柱状に成形された前記第１樹脂材料を第２の金型に保持させる第１樹脂保持工程と、前記基板保持工程及び前記第１樹脂保持工程の後、前記第１の金型と前記第２の金型とを、前記センサ機能領域と前記柱状に成形された前記第１樹脂材料とが当接するようにクランプすることにより前記第１樹脂層を形成する工程と、前記第１樹脂層を形成する工程の後、前記第１の金型と前記第２の金型との隙間に前記第２樹脂層の材料である第２樹脂材料を充填することにより前記第２樹脂層を形成する工程とを含む。   In order to solve the above problems, a manufacturing method of a semiconductor device according to the present invention includes a wiring board having wiring, and a sensor function region mounted on the wiring board and electrically connected to the wiring on the surface. A semiconductor device comprising: at least one semiconductor element having a first resin layer that is provided on the at least one semiconductor element and covers the sensor functional region; and a second resin layer that seals the at least one semiconductor element. A method of manufacturing a substrate, wherein the first mold holds the wiring board so that a back surface of the wiring board on which the at least one semiconductor element is mounted is in contact with the first mold. A first resin holding step of holding the first resin material, which is a material of the first resin layer, at least a part of which is molded into a column shape, in a second mold, Above After the plate holding step and the first resin holding step, the sensor function region and the first resin material formed in the columnar shape contact the first die and the second die. After the step of forming the first resin layer by clamping to the step and the step of forming the first resin layer, the second resin layer is formed in the gap between the first mold and the second mold. Forming the second resin layer by filling a second resin material, which is a material of

これにより、小型かつセンサ感度の高い半導体装置を、簡単かつ低コストで製造できる。   Thereby, a small semiconductor device with high sensor sensitivity can be manufactured easily and at low cost.

また、前記第１樹脂層は、側面が前記第２樹脂層で覆われ、底面が前記センサ機能領域に当接する柱状構造を有し、前記柱状構造の底面は、当該底面に対向する前記柱状構造の天面より大きく、前記第１樹脂層を形成する工程では、前記センサ機能領域と前記第１樹脂材料とが当接することにより前記第１樹脂材料の前記センサ機能領域側の端部が変形されて前記第１樹脂層を形成してもよい。   The first resin layer has a columnar structure in which a side surface is covered with the second resin layer and a bottom surface is in contact with the sensor function area, and the bottom surface of the columnar structure is opposed to the bottom surface. In the step of forming the first resin layer that is larger than the top surface of the first resin material, the sensor function region and the first resin material are brought into contact with each other, whereby the end portion of the first resin material on the sensor function region side is deformed. The first resin layer may be formed.

これにより、センサ機能領域が受光機能領域である場合、受光する光信号は柱状構造の側面で乱反射することがないためセンサの誤反応を抑えることができる。また、センサ機能領域が発光機能領域である場合、柱状構造の側面で反射した光が外部に乱反射することがないため発光輝度ムラを抑えることができる。また、第１樹脂層に大きな応力負荷が加わっても、第１樹脂層が離脱することがない。   As a result, when the sensor function area is the light receiving function area, the received optical signal is not irregularly reflected on the side surface of the columnar structure, so that the erroneous reaction of the sensor can be suppressed. Further, when the sensor function area is the light emission function area, the light reflected from the side surface of the columnar structure is not irregularly reflected to the outside, so that the light emission luminance unevenness can be suppressed. Moreover, even if a large stress load is applied to the first resin layer, the first resin layer does not come off.

また、本発明に係る半導体装置の製造方法は、さらに、前記第１樹脂保持工程の前に、前記第１樹脂材料の少なくとも一部を、一方の端面が他方の端面より小さい柱状に成形する第１樹脂材料成形工程を含み、前記第１樹脂層を形成する工程では、前記柱状に成形された前記第１樹脂材料の前記一方の端面が前記センサ機能領域に当接されてもよい。   Further, in the method for manufacturing a semiconductor device according to the present invention, before the first resin holding step, at least a part of the first resin material is formed into a columnar shape having one end surface smaller than the other end surface. In the step of forming the first resin layer including one resin material molding step, the one end surface of the first resin material molded into the columnar shape may be in contact with the sensor function region.

これにより、第１樹脂層を形成する工程での、センサ機能領域と第１樹脂材料との密着性が高くなる。言い換えると、センサ機能領域と第１樹脂層との密着性が高くなる。   Thereby, the adhesiveness of a sensor function area | region and 1st resin material becomes high in the process of forming a 1st resin layer. In other words, the adhesion between the sensor function region and the first resin layer is increased.

また、前記第１樹脂層の前記少なくとも１つの半導体素子に接する面は、前記少なくとも１つの半導体素子の表面よりも小さく、かつ、前記センサ機能領域の表面よりも大きくてもよい。   The surface of the first resin layer that contacts the at least one semiconductor element may be smaller than the surface of the at least one semiconductor element and larger than the surface of the sensor function region.

これにより、第１樹脂層により、センサ機能領域を確実に保護することができる。   Thereby, a sensor function area | region can be reliably protected by the 1st resin layer.

また、前記少なくとも１つの半導体素子は、複数の半導体素子を含み、前記第１樹脂保持工程では、前記第１樹脂材料の他部は前記第２の金型上に平板状に成形して保持され、前記第２樹脂層を形成する工程では、前記基板、前記第１樹脂材料の他部及び前記第２樹脂材料を、前記複数の半導体素子のうち１つ以上の半導体素子ごとに分割してもよい。   The at least one semiconductor element includes a plurality of semiconductor elements, and in the first resin holding step, the other part of the first resin material is molded and held on the second mold in a flat plate shape. In the step of forming the second resin layer, the substrate, the other part of the first resin material, and the second resin material may be divided into one or more semiconductor elements among the plurality of semiconductor elements. Good.

また、前記第２の金型は貫通孔を有し、前記第１樹脂層を形成する工程では、成形された前記第１樹脂材料を、前記貫通孔を用いて真空吸着することにより前記第１樹脂材料を前記第２の金型に保持させてもよい。   In addition, the second mold has a through hole, and in the step of forming the first resin layer, the first resin material that has been molded is vacuum-adsorbed using the through hole to form the first resin layer. A resin material may be held in the second mold.

また、前記第２の金型は凹部を有し、前記第１樹脂層を形成する工程では、成形された前記第１樹脂材料の少なくとも一部を前記凹部に入れ込むことにより前記第１樹脂材料を前記第２の金型に保持させてもよい。   The second mold has a recess, and in the step of forming the first resin layer, the first resin material is formed by inserting at least a part of the molded first resin material into the recess. May be held in the second mold.

これにより、第１樹脂層を小さい体積で形成することが可能となるので、材料の使用量を低減させることができ製造コストを抑制できる。また、複数の半導体装置を一括して形成した後にダイシングで個片化することにより、半導体装置を複数個製造する場合、ダイシングブレードにて裁断する位置であるダイシングライン上に第１樹脂層が位置しないようにできる。これにより、ダイシングにて個片に裁断された後の半導体装置の端面のバリやダレを防止できる。   Thereby, since it becomes possible to form the 1st resin layer with a small volume, the usage-amount of material can be reduced and manufacturing cost can be suppressed. In addition, when a plurality of semiconductor devices are manufactured by collectively forming a plurality of semiconductor devices and dicing into pieces, the first resin layer is positioned on a dicing line that is a position to be cut by a dicing blade. You can avoid it. Thereby, the burr | flash and sagging of the end surface of a semiconductor device after being cut | divided into the piece by dicing can be prevented.

また、前記第２の金型は、当該第２の金型を貫通し、前記第１樹脂材料に接するピンを有し、前記第１樹脂層を形成する工程では、前記ピンを前記第１の金型方向へ稼動することにより、前記第１樹脂材料を前記センサ機能領域に当接させてもよい。   The second mold has a pin that penetrates the second mold and contacts the first resin material. In the step of forming the first resin layer, the pin is attached to the first mold. By operating in the mold direction, the first resin material may be brought into contact with the sensor function area.

また、前記第１樹脂は光を透過してもよい。   The first resin may transmit light.

また、前記第１樹脂は熱硬化性樹脂であってもよい。   The first resin may be a thermosetting resin.

また、前記第１樹脂は粘弾性を有してもよい。   The first resin may have viscoelasticity.

これにより、第１樹脂は半導体素子よりも柔らかいので、第１樹脂層を形成する工程において、センサ機能領域と第１樹脂材料とが当接されても、センサ機能領域に傷がついたり、センサ機能領域が破壊されたりすることがない。   Accordingly, since the first resin is softer than the semiconductor element, even if the sensor functional region and the first resin material are brought into contact with each other in the step of forming the first resin layer, the sensor functional region is damaged or the sensor The functional area is not destroyed.

また、前記センサ機能領域は光学機能領域であってもよい。   The sensor function area may be an optical function area.

また、前記光学機能領域は受光機能領域であってもよい。   The optical function area may be a light receiving function area.

また、前記光学機能領域は発光機能領域であってもよい。   The optical function area may be a light emission function area.

また、前記センサ機能領域は圧力感知機能領域であってもよい。   The sensor function area may be a pressure sensing function area.

また、前記センサ機能領域は磁気感知機能領域であってもよい。   The sensor function area may be a magnetic sensing function area.

また、前記センサ機能領域は、複数のサブセンサ機能領域を含んでもよい。   The sensor function area may include a plurality of sub sensor function areas.

また、本発明に係る半導体装置は、配線を有する配線基板と、前記配線基板上に搭載され、表面に前記配線と電気的に接続されたセンサ機能領域を有する半導体素子と、前記半導体素子上に形成され、前記センサ機能領域を覆う第１樹脂層と、前記配線基板上及び前記半導体素子上に形成され、前記半導体素子を封止する第２樹脂層とを備え、前記第１樹脂層は、側面が前記第２樹脂層で覆われ、底面が前記センサ機能領域に当接する柱状構造を有し、前記柱状構造の底面は、当該底面に対向する前記柱状構造の天面より大きい。   A semiconductor device according to the present invention includes a wiring board having wiring, a semiconductor element mounted on the wiring board and having a sensor functional region electrically connected to the wiring on the surface, and the semiconductor element. A first resin layer formed and covering the sensor functional area; and a second resin layer formed on the wiring board and the semiconductor element and encapsulating the semiconductor element, the first resin layer comprising: A side surface is covered with the second resin layer, and a bottom surface has a columnar structure in contact with the sensor function area, and a bottom surface of the columnar structure is larger than a top surface of the columnar structure facing the bottom surface.

これにより、簡単かつ低コストで製造でき、小型かつセンサ感度の高い半導体装置を実現できる。   As a result, a semiconductor device that can be manufactured easily and at low cost, is small, and has high sensor sensitivity can be realized.

また、前記第１樹脂層には、真空吸着穴によって型取られた凸状の跡があってもよい。   Further, the first resin layer may have a convex mark formed by a vacuum suction hole.

また、前記第１樹脂層には、ピンが押圧されたことによって型取られた跡があってもよい。   The first resin layer may have a mark taken by pressing a pin.

本発明によれば、小型かつセンサ感度の高い半導体装置を、簡単かつ低コストで製造できる半導体装置及び半導体装置の製造方法を実現できる。また、簡単かつ低コストで製造でき、小型かつセンサ感度の高い半導体装置を実現できる。   ADVANTAGE OF THE INVENTION According to this invention, the semiconductor device which can manufacture a small semiconductor device with high sensor sensitivity easily and at low cost, and the manufacturing method of a semiconductor device are realizable. In addition, a semiconductor device that can be manufactured easily and at low cost, is small, and has high sensor sensitivity can be realized.

実施形態１に係る半導体装置の構成を示す断面図である。1 is a cross-sectional view illustrating a configuration of a semiconductor device according to a first embodiment. 図１Ａに示した構成のうち、範囲Ａを拡大して示す断面図である。It is sectional drawing which expands and shows the range A among the structures shown to FIG. 1A. 半導体装置の構成を示す上面図である。It is a top view which shows the structure of a semiconductor device. 半導体装置の金型による製造方法のうち、配線基板及び樹脂を金型に設置した時の略断面図である。FIG. 5 is a schematic cross-sectional view when a wiring board and a resin are installed in a mold in a method for manufacturing a semiconductor device using a mold. 下金型に成形された樹脂（透明樹脂）の凸部（柱状）の形状の一例を示す断面図である。It is sectional drawing which shows an example of the shape of the convex part (column shape) of resin (transparent resin) shape | molded by the lower metal mold | die. 凸部（柱状）の形状の他の一例を示す断面図である。It is sectional drawing which shows another example of the shape of a convex part (columnar shape). 凸部（柱状）の形状のさらに他の一例を示す断面図である。It is sectional drawing which shows another example of the shape of a convex part (columnar shape). 凸部（柱状）の形状のさらに他の一例を示す断面図である。It is sectional drawing which shows another example of the shape of a convex part (columnar shape). 凸部（柱状）の形状のさらに他の一例を示す断面図である。It is sectional drawing which shows another example of the shape of a convex part (columnar shape). 凸部（柱状）の形状のさらに他の一例を示す断面図である。It is sectional drawing which shows another example of the shape of a convex part (columnar shape). 半導体装置の金型による製造方法のうち、配線基板を上金型及び下金型でクランプする時の略断面図である。FIG. 5 is a schematic cross-sectional view when a wiring board is clamped with an upper mold and a lower mold in a manufacturing method using a mold of a semiconductor device. 半導体装置の金型による製造方法のうち、封止樹脂を金型に充填している時の略断面図である。FIG. 5 is a schematic cross-sectional view of a method for manufacturing a semiconductor device using a mold when the mold is filled with a sealing resin. 半導体装置の金型による製造方法のうち、封止樹脂が充填完了した時の略断面図である。FIG. 5 is a schematic cross-sectional view when a sealing resin is completely filled in a manufacturing method using a mold of a semiconductor device. 半導体装置の金型による製造方法のうち、金型を開いた時の略断面図である。FIG. 5 is a schematic cross-sectional view of a semiconductor device manufacturing method using a mold when the mold is opened. 上金型から取り出した連続した配線基板、樹脂（透明樹脂）及び封止樹脂の構成を示す上面図である。It is a top view which shows the structure of the continuous wiring board taken out from the upper metal mold | die, resin (transparent resin), and sealing resin. 半導体装置の金型による製造方法のうち、ダイシングで個片に裁断することを示した略断面図である。FIG. 4 is a schematic cross-sectional view showing that a semiconductor device is manufactured by using a metal mold and is cut into individual pieces by dicing. 実施形態２に係る半導体装置の構成を示す断面図である。FIG. 6 is a cross-sectional view illustrating a configuration of a semiconductor device according to a second embodiment. 図１０Ａに示した構成のうち、範囲Ｂを拡大して示す断面図である。It is sectional drawing which expands and shows the range B among the structures shown to FIG. 10A. 実施形態２に係る半導体装置の構成を示す上面図である。FIG. 6 is a top view illustrating a configuration of a semiconductor device according to a second embodiment. 図１１Ａに示した構成の一部を拡大して示す上面図である。It is a top view which expands and shows a part of structure shown to FIG. 11A. 半導体装置の金型による製造方法のうち、配線基板及び樹脂を金型に設置した時の略断面図である。FIG. 5 is a schematic cross-sectional view when a wiring board and a resin are installed in a mold in a method for manufacturing a semiconductor device using a mold. 凸部（柱状）の形状の他の一例を示す断面図である。It is sectional drawing which shows another example of the shape of a convex part (columnar shape). 凸部（柱状）の形状のさらに他の一例を示す断面図である。It is sectional drawing which shows another example of the shape of a convex part (columnar shape). 凸部（柱状）の形状のさらに他の一例を示す断面図である。It is sectional drawing which shows another example of the shape of a convex part (columnar shape). 凸部（柱状）の形状のさらに他の一例を示す断面図である。It is sectional drawing which shows another example of the shape of a convex part (columnar shape). 半導体装置の金型による製造方法のうち、配線基板を上金型及び下金型でクランプする時の略断面図である。FIG. 5 is a schematic cross-sectional view when a wiring board is clamped with an upper mold and a lower mold in a manufacturing method using a mold of a semiconductor device. 半導体装置の金型による製造方法のうち、樹脂をピンで突き上げ、樹脂とセンサ機能領域とを接触させる時の略断面図である。FIG. 5 is a schematic cross-sectional view when a resin is pushed up by a pin and a resin is brought into contact with a sensor function area in a manufacturing method using a mold of a semiconductor device. 半導体装置の金型による製造方法のうち、封止樹脂を金型に充填している時の略断面図である。FIG. 5 is a schematic cross-sectional view of a method for manufacturing a semiconductor device using a mold when the mold is filled with a sealing resin. 半導体装置の金型による製造方法のうち、封止樹脂が充填完了した時の略断面図である。FIG. 5 is a schematic cross-sectional view when a sealing resin is completely filled in a manufacturing method using a mold of a semiconductor device. 半導体装置の金型による製造方法のうち、金型を開いた時の略断面図である。FIG. 5 is a schematic cross-sectional view of a semiconductor device manufacturing method using a mold when the mold is opened. 上金型から取り出した連続した配線基板、樹脂（透明樹脂）及び封止樹脂の構成を示す上面図である。It is a top view which shows the structure of the continuous wiring board taken out from the upper metal mold | die, resin (transparent resin), and sealing resin. 半導体装置の金型による製造方法のうち、ダイシングで個片に裁断することを示した略断面図である。FIG. 4 is a schematic cross-sectional view showing that a semiconductor device is manufactured by using a metal mold and is cut into individual pieces by dicing. 実施形態３に係る半導体装置の構成を示す断面図である。FIG. 6 is a cross-sectional view illustrating a configuration of a semiconductor device according to a third embodiment. 半導体装置の構成を示す上面図である。It is a top view which shows the structure of a semiconductor device. 半導体装置の金型による製造方法のうち、配線基板及び樹脂を金型に設置した時の略断面図である。FIG. 5 is a schematic cross-sectional view when a wiring board and a resin are installed in a mold in a method for manufacturing a semiconductor device using a mold. 半導体装置の金型による製造方法のうち、配線基板を上金型及び下金型でクランプする時の略断面図である。FIG. 5 is a schematic cross-sectional view when a wiring board is clamped with an upper mold and a lower mold in a manufacturing method using a mold of a semiconductor device. 半導体装置の金型による製造方法のうち、樹脂をピンで突き上げ、樹脂とセンサ機能領域とを接触させる時の略断面図である。FIG. 5 is a schematic cross-sectional view when a resin is pushed up by a pin and a resin is brought into contact with a sensor function area in a manufacturing method using a mold of a semiconductor device. 半導体装置の金型による製造方法のうち、封止樹脂が充填完了した時の略断面図である。FIG. 5 is a schematic cross-sectional view when a sealing resin is completely filled in a manufacturing method using a mold of a semiconductor device. 半導体装置の金型による製造方法のうち、ダイシングで個片に裁断することを示した略断面図である。FIG. 4 is a schematic cross-sectional view showing that a semiconductor device is manufactured by using a metal mold and is cut into individual pieces by dicing.

以下、本発明の実施形態について、図面を参照しながら説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

（実施形態１）
本実施形態に係る半導体装置は、配線を有する配線基板と、配線基板上に搭載され、表面に配線と電気的に接続されたセンサ機能領域を有する半導体素子と、半導体素子上に形成された、センサ機能領域を覆う第１樹脂層と、配線基板上及び半導体素子上に形成された、半導体素子を封止する第２樹脂層とを備え、第１樹脂層は、側面が第２樹脂層で覆われ、底面がセンサ機能領域に当接する柱状構造を有し、柱状構造の底面は、当該底面に対向する前記柱状構造の天面より大きい。 (Embodiment 1)
The semiconductor device according to this embodiment is formed on a wiring board having wiring, a semiconductor element mounted on the wiring board and having a sensor function region electrically connected to the wiring on the surface, and the semiconductor element. A first resin layer that covers the sensor functional area; and a second resin layer that is formed on the wiring board and the semiconductor element and that seals the semiconductor element. The first resin layer has a side surface that is the second resin layer. The bottom surface of the columnar structure is covered and has a bottom surface that is in contact with the sensor function area, and the bottom surface of the columnar structure is larger than the top surface of the columnar structure facing the bottom surface.

これにより、本実施形態に係る半導体装置は、簡単かつ低コストで小型に製造でき、小型かつ高いセンサ感度を実現できる。   As a result, the semiconductor device according to the present embodiment can be easily and inexpensively manufactured in a small size, and can realize a small size and high sensor sensitivity.

〜半導体装置の構造〜
本実施形態に係る半導体装置の構造を、図１Ａ、図１Ｂ及び図２を用いて説明する。 ~ Structure of semiconductor device ~
The structure of the semiconductor device according to this embodiment will be described with reference to FIGS. 1A, 1B, and 2. FIG.

図１Ａは、実施形態１に係る半導体装置の構成を示す断面図であり、図１Ｂは、図１Ａに示した構成のうち、範囲Ａを拡大して示す断面図であり、図２は、実施形態１に係る半導体装置の構成を示す上面図である。なお、図１Ａは、図２のＡ−Ａ’断面での断面構成を示している。   1A is a cross-sectional view illustrating a configuration of the semiconductor device according to the first embodiment, FIG. 1B is a cross-sectional view illustrating a range A in the configuration illustrated in FIG. 1A, and FIG. 7 is a top view illustrating a configuration of a semiconductor device according to a first embodiment. FIG. FIG. 1A shows a cross-sectional configuration taken along the line A-A ′ of FIG. 2.

半導体装置１００は、所定の配線パターンが形成された配線基板１０１と、ワイヤ１０９によって配線基板１０１の電極部１０８ｃと電気的に接続された半導体素子１０２と、半導体素子１０２上に搭載されたセンサ機能領域（受光機能領域）１０３と、センサ機能領域（受光機能領域）１０３上を覆う樹脂（透明樹脂）１０６を有し、配線基板１０１上と半導体素子１０２と樹脂（透明樹脂）１０６の天面と底面とを除く面を封止樹脂１０７によって充填されており、樹脂（透明樹脂）１０６の天面は露出して形成されている。   The semiconductor device 100 includes a wiring board 101 on which a predetermined wiring pattern is formed, a semiconductor element 102 electrically connected to the electrode portion 108c of the wiring board 101 by a wire 109, and a sensor function mounted on the semiconductor element 102. A region (light receiving function region) 103 and a resin (transparent resin) 106 covering the sensor function region (light receiving function region) 103; and the top surface of the wiring substrate 101, the semiconductor element 102, and the resin (transparent resin) 106; The surface excluding the bottom surface is filled with the sealing resin 107, and the top surface of the resin (transparent resin) 106 is exposed.

言い換えると、半導体装置１００は、配線を有する配線基板１０１と、配線基板１０１上に搭載され、表面に配線基板１０１の配線とワイヤ１０９で電気的に接続されたセンサ機能領域（受光機能領域）１０３を有する半導体素子１０２と、半導体素子１０２上に形成された、センサ機能領域（受光機能領域）１０３を覆う樹脂（透明樹脂）１０６と、半導体素子１０２を封止する封止樹脂１０７と、配線基板１０１に半導体素子１０２を固定するためのダイボンド材１１０とを有する。   In other words, the semiconductor device 100 includes a wiring board 101 having wiring, and a sensor function area (light receiving function area) 103 mounted on the wiring board 101 and electrically connected to the wiring of the wiring board 101 and the wire 109 on the surface. , A resin (transparent resin) 106 that covers the sensor function region (light receiving function region) 103, a sealing resin 107 that seals the semiconductor element 102, and a wiring board 101 has a die bond material 110 for fixing the semiconductor element 102.

この半導体装置１００は、例えば光ピックアップ装置である。   The semiconductor device 100 is, for example, an optical pickup device.

配線基板１０１は、裏面（図中下の面）に外部接続電極１０８ｂが形成され、上面（図中上の面）に電極部１０８ｃが形成され、さらに、当該配線基板１０１を厚さ方向に貫通し、外部接続電極１０８ｂと電極部１０８ｃとを接続する貫通電極１０８ａが形成されている、例えば、矩形平板状のプラスチック基板である。   The wiring substrate 101 has an external connection electrode 108b formed on the back surface (lower surface in the drawing), an electrode portion 108c formed on the upper surface (upper surface in the drawing), and further penetrates the wiring substrate 101 in the thickness direction. In addition, for example, a rectangular flat plastic substrate in which the through electrode 108a that connects the external connection electrode 108b and the electrode portion 108c is formed.

具体的には、配線基板１０１には、配線基板１０１の上面の半導体素子１０２が搭載された領域の周辺に開口する複数の貫通孔が設けられ、その貫通孔にめっき及び導電材が埋め込められて貫通電極１０８ａが形成されている。貫通電極１０８ａは、配線基板１０１の半導体素子１０２の搭載面（配線基板１０１の上面）において、半導体素子１０２の電極パッド（図示せず）とワイヤ１０９によって電気的に接続されている。つまり、貫通電極１０８ａは、電極部１０８ｃ及びワイヤ１０９を介して半導体素子１０２のセンサ機能領域（受光機能領域）１０３と電気的に接続されている。一方、配線基板１０１の半導体素子１０２の搭載面とは反対側の面（配線基板１０１の下面）において貫通電極１０８ａは、その面に設けられた外部接続電極１０８ｂと電気的に接続している。この外部接続電極１０８ｂは外部回路と接続されて、電力の供給を受けたり信号の入出力をおこなったりする。よって、センサ機能領域（受光領域）１０３で発生した信号は、外部接続電極１０８ｂから半導体装置１００の外部へ取り出される。   Specifically, the wiring substrate 101 is provided with a plurality of through holes that open around the region where the semiconductor element 102 is mounted on the upper surface of the wiring substrate 101, and plating and conductive material are embedded in the through holes. A through electrode 108a is formed. The through electrode 108 a is electrically connected to an electrode pad (not shown) of the semiconductor element 102 by a wire 109 on the mounting surface (the upper surface of the wiring board 101) of the semiconductor element 102 of the wiring board 101. That is, the through electrode 108 a is electrically connected to the sensor function region (light receiving function region) 103 of the semiconductor element 102 via the electrode portion 108 c and the wire 109. On the other hand, the through electrode 108a is electrically connected to the external connection electrode 108b provided on the surface of the wiring substrate 101 opposite to the mounting surface of the semiconductor element 102 (the lower surface of the wiring substrate 101). The external connection electrode 108b is connected to an external circuit to receive power supply and input / output signals. Therefore, a signal generated in the sensor function area (light receiving area) 103 is extracted from the external connection electrode 108 b to the outside of the semiconductor device 100.

なお、貫通電極１０８ａは配線基板１０１の半導体素子１０２搭載面において、半導体素子１０２の電極パッドの電気的接続はワイヤに限らず、フリップチップ工法でもよい。つまり、半導体素子１０２は、バンプを介して電極部１０８ｃに電気的に接続されていてもよい。   The through electrode 108a is not limited to a wire on the surface of the wiring substrate 101 where the semiconductor element 102 is mounted, and a flip chip method may be used. That is, the semiconductor element 102 may be electrically connected to the electrode portion 108c via the bump.

半導体素子１０２は、ダイボンド材１１０により配線基板１０１上に固定され、表面にセンサ機能領域（受光機能領域）１０３が形成されている。センサ機能領域（受光機能領域）１０３は、ワイヤ１０９を介して配線基板１０１上の電極部１０８ｃと電気的に接続されている。具体的には、半導体素子１０２は、例えば矩形平板状であり、１つの面（表面）の中央部分にセンサ機能領域（受光機能領域）１０３が形成されている。さらに、その１つの面（表面）の周辺部には電極パッドが設けられている。配線基板１０１へは、半導体素子１０２のセンサ機能領域（受光機能領域）１０３が形成されていない他方の面が載せられてダイボンド材１１０で固定されている。即ち、配線基板１０１の上に半導体素子１０２を搭載し、センサ機能領域（受光機能領域）１０３は上方を向いている。   The semiconductor element 102 is fixed on the wiring substrate 101 by a die bonding material 110, and a sensor function area (light receiving function area) 103 is formed on the surface. The sensor function area (light receiving function area) 103 is electrically connected to the electrode portion 108 c on the wiring substrate 101 via the wire 109. Specifically, the semiconductor element 102 has, for example, a rectangular flat plate shape, and a sensor function region (light receiving function region) 103 is formed at the center of one surface (front surface). Furthermore, an electrode pad is provided on the periphery of the one surface (front surface). On the wiring substrate 101, the other surface of the semiconductor element 102 where the sensor function region (light receiving function region) 103 is not formed is placed and fixed with the die bond material 110. That is, the semiconductor element 102 is mounted on the wiring substrate 101, and the sensor function area (light receiving function area) 103 faces upward.

封止樹脂１０７は、本発明の第２樹脂層に相当し、配線基板１０１上及び半導体素子１０２上に形成され、半導体素子１０２を封止する。具体的には、封止樹脂１０７は、半導体素子１０２のセンサ機能領域（受光機能領域）１０３を樹脂（透明樹脂）１０６と接触している部分を除く半導体素子１０２と、樹脂（透明樹脂）１０６の天面とセンサ機能領域（受光機能領域）１０３と接触している底面を除く面と、半導体素子１０２と配線基板１０１とを電気的に接続しているワイヤ１０９を封止している。   The sealing resin 107 corresponds to the second resin layer of the present invention, and is formed on the wiring substrate 101 and the semiconductor element 102 to seal the semiconductor element 102. Specifically, the sealing resin 107 includes the semiconductor element 102 excluding a portion where the sensor function region (light receiving function region) 103 of the semiconductor element 102 is in contact with the resin (transparent resin) 106, and the resin (transparent resin) 106. A wire 109 that electrically connects the semiconductor element 102 and the wiring substrate 101 to the surface excluding the bottom surface that is in contact with the top surface and the sensor function region (light receiving function region) 103 is sealed.

樹脂（透明樹脂）１０６は、本発明の第１樹脂層に相当し、半導体素子１０２上に形成され、センサ機能領域（受光機能領域）１０３を覆う。また、樹脂（透明樹脂）１０６は、１００ｎｍから１０００μｍの波長を有する光（電磁波）を透過することが望ましく、更には３５０ｎｍから８００ｎｍであることが望ましい。また、その透過率は１０％以上であることが望ましく、更には８０％以上であることが望ましい。   The resin (transparent resin) 106 corresponds to the first resin layer of the present invention, is formed on the semiconductor element 102, and covers the sensor function area (light receiving function area) 103. The resin (transparent resin) 106 desirably transmits light (electromagnetic waves) having a wavelength of 100 nm to 1000 μm, and more preferably 350 nm to 800 nm. The transmittance is preferably 10% or more, and more preferably 80% or more.

また、樹脂（透明樹脂）１０６は粘弾性を有しているため、半導体素子１０２のセンサ機能領域（受光機能領域）１０３との接触面は隙間なく密着しており、センサ機能領域（受光機能領域）１０３上に封止樹脂１０７は入り込んでいない。加えて、樹脂（透明樹脂）１０６は粘弾性を有しているため、半導体素子１０２を破壊することは無い。具体的には、樹脂（透明樹脂）１０６の弾性率は室温で１０ｋＰａから１ＧＰａが望ましく、更には５００ｋＰａから１０ＭＰａが望ましい。   Further, since the resin (transparent resin) 106 has viscoelasticity, the contact surface of the semiconductor element 102 with the sensor function region (light receiving function region) 103 is in close contact with the sensor function region (light receiving function region). ) No sealing resin 107 enters 103. In addition, since the resin (transparent resin) 106 has viscoelasticity, the semiconductor element 102 is not destroyed. Specifically, the elastic modulus of the resin (transparent resin) 106 is desirably 10 kPa to 1 GPa at room temperature, and more desirably 500 kPa to 10 MPa.

ここで、この樹脂（透明樹脂）１０６は、側面が封止樹脂１０７で覆われ、底面（図中下の面）がセンサ機能領域（受光機能領域）１０３に当接する柱状構造１０６ａと、封止樹脂１０７の表面を覆う平板状構造１０６ｂとを含む。図１Ｂに示すように、柱状構造の底面は、当該底面に対向する柱状構造の天面より大きい。つまり、半導体素子１０２のセンサ機能領域（受光機能領域）１０３と樹脂（透明樹脂）１０６とが接触している部分の面積は、それと対向する天面の面積よりも大きくなっている。例えば、柱状構造の天面の面積をα、柱状構造の底面の面積をβとすると、α＜βとなっている。   Here, the resin (transparent resin) 106 is sealed with a columnar structure 106 a whose side surface is covered with a sealing resin 107 and whose bottom surface (lower surface in the drawing) abuts on the sensor function area (light receiving function area) 103. And a flat plate-like structure 106 b covering the surface of the resin 107. As shown in FIG. 1B, the bottom surface of the columnar structure is larger than the top surface of the columnar structure facing the bottom surface. In other words, the area of the portion of the semiconductor element 102 where the sensor function area (light receiving function area) 103 and the resin (transparent resin) 106 are in contact is larger than the area of the top surface facing it. For example, if the area of the top surface of the columnar structure is α and the area of the bottom surface of the columnar structure is β, α <β.

これにより、受光する光信号が柱状構造１０６ａの側面で乱反射することがないためセンサの誤反応を抑えることができる。なお、センサ機能領域１０３が発光機能領域である場合であっても、柱状構造１０６ａの側面で反射した光が外部に乱反射することがないため発光輝度ムラを抑えることができる。   Thereby, since the received optical signal is not irregularly reflected by the side surface of the columnar structure 106a, the erroneous reaction of the sensor can be suppressed. Even when the sensor function area 103 is a light emission function area, light reflected from the side surface of the columnar structure 106a is not irregularly reflected to the outside, so that unevenness in light emission luminance can be suppressed.

更に、樹脂（透明樹脂）１０６は、半導体素子１０２と配線基板１０１とを電気的に接続しているワイヤ１０９と接触していない。   Further, the resin (transparent resin) 106 is not in contact with the wire 109 that electrically connects the semiconductor element 102 and the wiring substrate 101.

また、樹脂（透明樹脂）１０６の上面には、金型で成形するときに真空吸着で樹脂（透明樹脂）１０６を固定した跡１１７が設けられる。   In addition, on the upper surface of the resin (transparent resin) 106, a trace 117 is provided in which the resin (transparent resin) 106 is fixed by vacuum suction when molding with a mold.

また、樹脂（透明樹脂）１０６の半導体素子１０２に接する面は、半導体素子１０２の表面よりも小さく、センサ機能領域（受光機能領域）１０３の表面よりも大きい。これにより、樹脂（透明樹脂）１０５により、センサ機能領域（受光機能領域）１０３を確実に保護することができる。   Further, the surface of the resin (transparent resin) 106 that contacts the semiconductor element 102 is smaller than the surface of the semiconductor element 102 and larger than the surface of the sensor function region (light receiving function region) 103. Thereby, the sensor function area (light receiving function area) 103 can be reliably protected by the resin (transparent resin) 105.

以上のように、本実施形態に係る半導体装置１００は、配線パターンを有する配線基板１０１と、配線基板１０１上に搭載され、表面に配線基板１０１の配線パターンと電気的に接続されたセンサ機能領域（受光領域）を有する半導体素子１０２と、半導体素子１０２上に形成された、センサ機能領域（受光領域）を覆う樹脂（透明樹脂）１０６と、配線基板１０１上及び半導体素子１０２上に形成された、半導体素子１０２を封止する封止樹脂１０７とを備え、樹脂（透明樹脂）１０６は、側面が封止樹脂１０７で覆われ、底面がセンサ機能領域（受光領域）１０３に当接する柱状構造１０６ａを有し、柱状構造１０６ａの底面は、当該底面に対向する柱状構造１０６ａの天面より大きい。   As described above, the semiconductor device 100 according to the present embodiment includes the wiring substrate 101 having the wiring pattern, and the sensor function region mounted on the wiring substrate 101 and electrically connected to the wiring pattern of the wiring substrate 101 on the surface. A semiconductor element 102 having a (light receiving region), a resin (transparent resin) 106 formed on the semiconductor element 102 covering the sensor function region (light receiving region), and formed on the wiring substrate 101 and the semiconductor element 102. And a resin (transparent resin) 106 having a side surface covered with the sealing resin 107 and a bottom surface contacting the sensor function region (light receiving region) 103. The bottom surface of the columnar structure 106a is larger than the top surface of the columnar structure 106a facing the bottom surface.

これにより、本実施形態に係る半導体装置１００は、簡単かつ低コストで製造でき、小型かつ高いセンサ感度を実現できる。   Thereby, the semiconductor device 100 according to the present embodiment can be manufactured easily and at low cost, and can realize a small size and high sensor sensitivity.

〜半導体装置の製造方法〜
次に、実施形態１に係る半導体装置１００の製造方法について説明する。 -Semiconductor device manufacturing method-
Next, a method for manufacturing the semiconductor device 100 according to the first embodiment will be described.

図３Ａ〜図９は、実施形態１に係る半導体装置１００の製造方法の一部を示す図である。   3A to 9 are diagrams illustrating a part of the method for manufacturing the semiconductor device 100 according to the first embodiment.

図３Ａは、実施形態１に係る半導体装置１００の金型による製造方法のうち、配線基板及び樹脂を金型に設置した時の略断面図である。   FIG. 3A is a schematic cross-sectional view when a wiring board and a resin are installed in a mold in the method for manufacturing the semiconductor device 100 according to the first embodiment using a mold.

まず、連続した配線基板１１８に複数の半導体素子１０２を一定寸法間隔で搭載する。連続した配線基板１１８は、個々の配線基板１０１が複数繋がっているものであり、後ほど切断されることにより個々の配線基板１０１となる。つまり、連続した配線基板１１８は図１Ａに示した配線基板１０１の集合体である。   First, a plurality of semiconductor elements 102 are mounted on a continuous wiring board 118 at a constant size interval. The continuous wiring board 118 is formed by connecting a plurality of individual wiring boards 101, and becomes individual wiring boards 101 by being cut later. That is, the continuous wiring board 118 is an aggregate of the wiring boards 101 shown in FIG. 1A.

次に、半導体素子１０２の電極パッドと、連続した配線基板１１８の電極部１０８ｃとをワイヤボンディングによって電気的に接続する。   Next, the electrode pad of the semiconductor element 102 and the electrode part 108c of the continuous wiring board 118 are electrically connected by wire bonding.

一方、下金型１０５に、当該下金型１０５とは別の金型を用いて、樹脂（透明樹脂）１０６を凸部がセンサ機能領域（受光機能領域）１０３のピッチと同ピッチになるように連続して成形する。つまり、別の金型で成形された樹脂（透明樹脂）１０６は、本発明の第１樹脂材料に相当し、この第１樹脂材料の一部は、一方の端面が他方の端面より小さい柱状に成形されている。そして、柱状に成形された第１樹脂材料の一方の端面が、後の工程においてセンサ機能領域（受光領域）１０３の当接するように、下金型１０５に保持させる。また、第１樹脂材料の他部は、平板状に成形されている。   On the other hand, for the lower mold 105, a mold different from the lower mold 105 is used, and the resin (transparent resin) 106 is projected so that the convex portion has the same pitch as the pitch of the sensor function area (light receiving function area) 103. To form continuously. That is, the resin (transparent resin) 106 molded with another mold corresponds to the first resin material of the present invention, and a part of the first resin material has a columnar shape in which one end surface is smaller than the other end surface. Molded. Then, one end surface of the first resin material formed into a columnar shape is held by the lower mold 105 so that the sensor function area (light receiving area) 103 abuts in a later step. The other part of the first resin material is formed into a flat plate shape.

ここで、下金型１０５に成形された樹脂（透明樹脂）１０６の凸部（柱状）の形状の一例を図３Ｂに示す。   Here, an example of the shape of the convex part (columnar shape) of the resin (transparent resin) 106 molded in the lower mold 105 is shown in FIG. 3B.

樹脂（透明樹脂）１０６の凸部天面を凸状にすることでセンサ機能領域（受光機能領域）１０３との密着性を向上させている。つまり、柱状に形成された樹脂（透明樹脂）１０６のセンサ機能領域側の端面は、柱状に成形された樹脂（透明樹脂）１０６のセンサ機能領域側の端面に対向する端面より小さい。これにより、センサ機能領域（受光機能領域）１０３と樹脂（透明樹脂）１０６との接合面での密着性が高まる。   Adhesiveness with the sensor function region (light receiving function region) 103 is improved by making the top surface of the convex portion of the resin (transparent resin) 106 convex. That is, the end surface on the sensor function region side of the resin (transparent resin) 106 formed in the columnar shape is smaller than the end surface facing the end surface on the sensor function region side of the resin (transparent resin) 106 formed in the columnar shape. Thereby, the adhesiveness in the joint surface of the sensor function area | region (light reception function area | region) 103 and resin (transparent resin) 106 increases.

その他、樹脂（透明樹脂）１０６の凸部の形状は、図３Ｃ〜図３Ｇに示すような形状でもよい。   In addition, the shape of the convex portion of the resin (transparent resin) 106 may be a shape as shown in FIGS. 3C to 3G.

この樹脂（透明樹脂）１０６は粘弾性を有する熱硬化性樹脂であり、その粘弾性は硬化反応率で制御できる。また、粘弾性は自重で形状が保持される程度が望ましい。凸部の高さは、下金型１０５の掘り込み高さから連続した配線基板１１８と半導体素子１０２の高さを差し引いた長さよりもやや長い長さとする。望ましくは５０マイクロメートルから２００マイクロメートルである。   This resin (transparent resin) 106 is a thermosetting resin having viscoelasticity, and the viscoelasticity can be controlled by a curing reaction rate. The viscoelasticity is preferably such that the shape is maintained by its own weight. The height of the convex portion is set to be slightly longer than the length obtained by subtracting the height of the continuous wiring board 118 and the semiconductor element 102 from the digging height of the lower mold 105. Desirably, it is 50 micrometers to 200 micrometers.

ここで、樹脂（透明樹脂）１０６は、具体的材料としては、主としてエポキシ樹脂、ユリア樹脂、シリコーン樹脂などの耐候性に優れた透明樹脂が好適に用いられる。シリコーン樹脂を用いることが特に好ましい。   Here, as a specific material of the resin (transparent resin) 106, a transparent resin having excellent weather resistance such as an epoxy resin, a urea resin, and a silicone resin is preferably used. It is particularly preferable to use a silicone resin.

次に、図３Ａに示すように連続した配線基板１１８を上金型１０４に保持する（配線基板保持工程）。その連続した配線基板１１８の固定は、上金型１０４内に設置した後真空吸着することにより行った。その他、冶具により連続した配線基板１１８の端部を保持してもよい。   Next, as shown in FIG. 3A, the continuous wiring board 118 is held in the upper mold 104 (wiring board holding step). The continuous wiring board 118 was fixed by installing it in the upper mold 104 and then vacuum-sucking it. In addition, you may hold | maintain the edge part of the continuous wiring board 118 with a jig.

また上金型１０４に対向する面に下金型１０５が設置されている。下金型１０５の掘り込み部（キャビティ）の所定の位置に樹脂（透明樹脂）１０６を設置する。その後下金型１０５に設けられた真空吸着穴１１２から真空で樹脂（透明樹脂）１０６を固定する（樹脂保持工程）。このとき、樹脂（透明樹脂）１０６の凸部が上方向に向くように設置する。ここで、上金型１０４及び下金型１０５は１２０℃から２００℃に加熱されている。なお、上金型１０４は本発明の第１の金型に相当し、下金型１０５は本発明の第２の金型に相当する。   A lower mold 105 is installed on the surface facing the upper mold 104. A resin (transparent resin) 106 is placed at a predetermined position in the digging portion (cavity) of the lower mold 105. Thereafter, the resin (transparent resin) 106 is fixed by vacuum from a vacuum suction hole 112 provided in the lower mold 105 (resin holding step). At this time, the resin (transparent resin) 106 is installed so that the convex portion faces upward. Here, the upper mold 104 and the lower mold 105 are heated from 120 ° C. to 200 ° C. The upper mold 104 corresponds to the first mold of the present invention, and the lower mold 105 corresponds to the second mold of the present invention.

次に、図４に示すように上金型１０４と下金型１０５とを閉じ、連続した配線基板の周辺部を上金型１０４と下金型１０５でクランプし、その後の工程で封止樹脂１０７が注入されても上金型１０４と下金型１０５とが開かないように圧力を付与する。これと同時に、樹脂（透明樹脂）１０６とセンサ機能領域（受光機能領域）１０３とは隙間なく接触する。言い換えると、上金型１０４と下金型１０５とを、センサ機能領域（受光機能領域）１０３と柱状に成形された樹脂（透明樹脂）１０６とが当接するようにクランプする（樹脂形成工程）。   Next, as shown in FIG. 4, the upper mold 104 and the lower mold 105 are closed, and the peripheral portion of the continuous wiring board is clamped by the upper mold 104 and the lower mold 105, and the sealing resin is used in the subsequent steps. Pressure is applied so that the upper mold 104 and the lower mold 105 do not open even if 107 is injected. At the same time, the resin (transparent resin) 106 and the sensor function area (light receiving function area) 103 are in contact with each other without a gap. In other words, the upper mold 104 and the lower mold 105 are clamped so that the sensor function area (light receiving function area) 103 and the columnar resin (transparent resin) 106 are in contact with each other (resin forming process).

このとき、センサ機能領域（受光機能流域）１０３と樹脂（透明樹脂）１０６とが当接することにより、樹脂（透明樹脂）１０６のセンサ機能領域（受光機能領域）１０３側の端部が変形されて、図１Ａ及び図１Ｂに示すような樹脂（透明樹脂）１０６の形状となる。具体的には、センサ機能領域（受光機能領域）１０３に当接する柱状構造１０６ａの底面の大きさが、柱状構造１０６ａの天面の大きさよりも大きい形状を有する樹脂（透明樹脂）１０６となる。   At this time, the sensor function area (light receiving function flow area) 103 and the resin (transparent resin) 106 come into contact with each other, so that the end of the resin (transparent resin) 106 on the sensor function area (light receiving function area) 103 side is deformed. The shape of the resin (transparent resin) 106 as shown in FIGS. 1A and 1B is obtained. Specifically, the resin (transparent resin) 106 has a shape in which the size of the bottom surface of the columnar structure 106a in contact with the sensor function region (light receiving function region) 103 is larger than the size of the top surface of the columnar structure 106a.

ここで、樹脂（透明樹脂）１０６は弾性体であるため半導体素子１０２よりも柔らかく、接触しても傷をつけたり破壊することはない。言い換えると、樹脂（透明樹脂）１０６は、粘弾性を有する。これにより、樹脂形成工程において、センサ機能領域（受光機能領域）１０３と樹脂（透明樹脂）１０６とが当接されても、センサ機能領域（受光機能領域）１０３に傷がついたり、センサ機能領域（受光機能領域）１０３が破壊されたりすることがない。なお、樹脂形成工程で、端部が変形されるまでの樹脂（透明樹脂）１０６は本発明の第１樹脂材料に相当する。   Here, since the resin (transparent resin) 106 is an elastic body, it is softer than the semiconductor element 102 and does not damage or break even if contacted. In other words, the resin (transparent resin) 106 has viscoelasticity. As a result, even if the sensor function area (light receiving function area) 103 and the resin (transparent resin) 106 are in contact with each other in the resin forming step, the sensor function area (light receiving function area) 103 is damaged or the sensor function area The (light receiving function area) 103 is not destroyed. Note that the resin (transparent resin) 106 until the end portion is deformed in the resin forming step corresponds to the first resin material of the present invention.

次に、図６に示すように金型５に設けられた封止樹脂注入口１１３から封止樹脂１０７を金型内に充填させる。封止樹脂充填方法は一般に用いられるトランスファー成型である。言い換えると、上金型１０４と下金型１０５との隙間に封止樹脂１０７を充填する（封止樹脂形成工程）。これにより、連続した配線基板１１８の半導体素子１０２の搭載面、半導体素子１０２、ワイヤ１０９、樹脂（透明樹脂）１０６の天面を除く側面は封止樹脂１０７によって封止される。ここで、樹脂（透明樹脂）１０６とセンサ機能領域（受光領域）１０３とは隙間なく接触しているため、樹脂（透明樹脂）１０６とセンサ機能領域（受光領域）１０３との間に封止樹脂１０７が入り込むことはない。   Next, as shown in FIG. 6, the sealing resin 107 is filled into the mold from the sealing resin injection port 113 provided in the mold 5. The sealing resin filling method is generally used transfer molding. In other words, the sealing resin 107 is filled in the gap between the upper mold 104 and the lower mold 105 (sealing resin forming step). Thereby, the mounting surface of the semiconductor element 102 on the continuous wiring substrate 118, the side surfaces of the semiconductor element 102, the wires 109, and the top surface of the resin (transparent resin) 106 are sealed with the sealing resin 107. Here, since the resin (transparent resin) 106 and the sensor function area (light receiving area) 103 are in contact with each other without a gap, a sealing resin is provided between the resin (transparent resin) 106 and the sensor function area (light receiving area) 103. 107 does not enter.

次に、図６に示すように、上金型１０４と下金型１０５との隙間への封止樹脂１０７の充填が完了後、封止樹脂１０７を硬化させる。なお、硬化前の封止樹脂１０７は、本発明の第２樹脂材料に相当する。   Next, as shown in FIG. 6, after the filling of the sealing resin 107 into the gap between the upper mold 104 and the lower mold 105 is completed, the sealing resin 107 is cured. Note that the sealing resin 107 before curing corresponds to the second resin material of the present invention.

次に、図７に示すように、上金型１０４と下金型１０５とを開き、連続した配線基板１１８を取り出す。図８に、上金型１０４から取り出した連続した配線基板１１８、樹脂（透明樹脂）１０６及び封止樹脂１０７の構成を示す上面図である。なお、この上面図は、連続した配線基板１１８を下金型１０５側から見た図である。   Next, as shown in FIG. 7, the upper mold 104 and the lower mold 105 are opened, and the continuous wiring board 118 is taken out. FIG. 8 is a top view showing the configuration of the continuous wiring board 118, resin (transparent resin) 106, and sealing resin 107 taken out from the upper mold 104. In addition, this top view is the figure which looked at the continuous wiring board 118 from the lower metal mold | die 105 side.

次に、図９に示すように、連続した配線基板１１８を、ダイシングライン１１１においてダイシングブレード１１４で切断し、個々の配線基板１０１からなる図１Ａに示す半導体装置１００が複数個出来上がる。言い換えると、連続した配線基板１１８をセンサ機能領域（受光機能領域）１０３ごとに分割することにより、複数の半導体装置１００に分割する。   Next, as shown in FIG. 9, a continuous wiring board 118 is cut by a dicing blade 114 in a dicing line 111, and a plurality of semiconductor devices 100 shown in FIG. In other words, the continuous wiring board 118 is divided into the plurality of semiconductor devices 100 by dividing each of the sensor function areas (light receiving function areas) 103.

以上のように、本実施形態に係る半導体装置１００の製造方法は、配線を有する配線基板１０１と、配線基板１０１上に搭載され、表面に配線と電気的に接続されたセンサ機能領域（受光機能領域）１０３を有する半導体素子１０２と、半導体素子１０２上に設けられ、センサ機能領域（受光機能領域）１０３を覆う樹脂（透明樹脂）１０６と、半導体素子１０２を封止する封止樹脂１０７とを備える半導体装置１００の製造方法であって、表面に半導体素子１０２が搭載された連続した配線基板１１８の裏面が上金型１０４に接するように、上金型１０４に連続した配線基板１１８を保持させる配線基板保持工程と、樹脂（透明樹脂）１０６の材料の一部を柱状に成形して下金型１０５に保持させる樹脂保持工程と、配線基板保持工程及び樹脂保持工程の後、上金型１０４と下金型１０５とを、センサ機能領域（受光機能領域）１０３と柱状に成形された樹脂（透明樹脂）１０６とが当接するようにクランプすることにより樹脂（透明樹脂）１０６を形成する樹脂形成工程と、樹脂形成工程の後、上金型１０４と下金型１０５との隙間に封止樹脂１０７を充填することにより封止樹脂１０７を形成する封止樹脂形成工程とを含む。   As described above, the manufacturing method of the semiconductor device 100 according to the present embodiment includes the wiring substrate 101 having wiring, and the sensor function region (light receiving function) mounted on the wiring substrate 101 and electrically connected to the wiring on the surface. (Region) 103, a resin (transparent resin) 106 provided on the semiconductor element 102 and covering the sensor function region (light receiving function region) 103, and a sealing resin 107 for sealing the semiconductor element 102 A method of manufacturing a semiconductor device 100 comprising: a continuous wiring board 118 is held on an upper mold 104 such that a back surface of the continuous wiring board 118 having a semiconductor element 102 mounted on the front surface is in contact with the upper mold 104. A wiring substrate holding step, a resin holding step in which a part of the material of the resin (transparent resin) 106 is formed into a columnar shape and held in the lower mold 105, a wiring substrate holding step, After the oil retaining step, the upper mold 104 and the lower mold 105 are clamped so that the sensor function area (light receiving function area) 103 and the resin (transparent resin) 106 formed in a column shape come into contact with each other. (Transparent Resin) Sealing for forming sealing resin 107 by filling sealing resin 107 in the gap between upper mold 104 and lower mold 105 after the resin forming step for forming 106 and the resin forming step Resin forming step.

これにより、本実施形態に係る半導体装置１００の製造方法は、小型かつセンサ感度の高い半導体装置１００を、簡単かつ低コストで製造できる。以下、この半導体装置１００の製造方法が奏する効果について具体的に述べる。   Thereby, the manufacturing method of the semiconductor device 100 according to the present embodiment can manufacture the semiconductor device 100 having a small size and high sensor sensitivity easily and at low cost. Hereinafter, the effects produced by the method for manufacturing the semiconductor device 100 will be specifically described.

なお、配線基板保持工程は本発明の基板保持工程に相当し、樹脂保持工程は本発明の第１樹脂保持工程に相当し、樹脂形成工程は本発明の第１樹脂層を形成する工程に相当し、封止樹脂形成工程は本発明の第２樹脂層を形成する工程に相当する。   The wiring board holding process corresponds to the board holding process of the present invention, the resin holding process corresponds to the first resin holding process of the present invention, and the resin forming process corresponds to the process of forming the first resin layer of the present invention. The sealing resin forming step corresponds to the step of forming the second resin layer of the present invention.

また、本実施形態に係る半導体装置１００の製造方法は、さらに、樹脂保持工程の前に、樹脂（透明樹脂）１０６の一部を、一方の端面が他方の端面より小さい柱状に成形する樹脂材料成形工程を含み、樹脂形成工程では、樹脂材料成形工程で柱状に成形された樹脂（透明樹脂）１０６の一方の端面がセンサ機能領域（受光機能領域）１０３に当接される。なお、樹脂材料成形工程は、本発明の第１樹脂材料成形工程に相当する。   In addition, the method for manufacturing the semiconductor device 100 according to the present embodiment further includes a resin material in which a part of the resin (transparent resin) 106 is molded into a columnar shape with one end face smaller than the other end face before the resin holding step. In the resin forming process, including the molding process, one end surface of the resin (transparent resin) 106 molded in a columnar shape in the resin material molding process is brought into contact with the sensor function area (light receiving function area) 103. The resin material molding step corresponds to the first resin material molding step of the present invention.

本実施形態１においては、特許文献１に記載されているような配線基板を刳り貫き、半導体機能領域を露出させた構成と比べ、センサ機能領域（受光機能領域）１０３を樹脂（透明樹脂）１０６で密着させているためセンサ機能領域（受光機能領域）１０３に異物が付着することを防ぐことができるためセンサ機能への信号を阻害することがない。また、半導体素子１０２と配線基板の電極部１０８ｃとを接合する箇所も露出していないため異物付着によるショート不良も発生しない。   In the first embodiment, the sensor function area (light receiving function area) 103 is replaced with a resin (transparent resin) 106 as compared with the configuration in which the wiring board described in Patent Document 1 is pierced and the semiconductor function area is exposed. Since it is possible to prevent foreign matter from adhering to the sensor function area (light receiving function area) 103, the signal to the sensor function is not hindered. In addition, since a portion where the semiconductor element 102 and the electrode portion 108c of the wiring board are joined is not exposed, a short circuit failure due to adhesion of foreign matter does not occur.

特許文献１に記載されているような刳り貫き領域に透明樹脂を別途塗布する場合においても、塗布方法で必要な樹脂天面部の研磨も必要がない。加えて、センサ機能領域（受光機能領域）１０３上のみを収縮率が大きい樹脂（透明樹脂）１０６で覆い、配線基板１０１の電極部１０８ｃと半導体素子１０２との接続部を収縮率の小さい封止樹脂１０７で覆っているため、樹脂（透明樹脂）１０６の収縮や接着力不足による配線基板１０１の電極部１０８と半導体素子１０２との接続部の断線などの接続信頼性低下を抑えることができる。さらに、特許文献１及び３記載の構成に比べ樹脂（透明樹脂）１０６の体積を小さくできるため樹脂（透明樹脂）１０６の収縮量を小さくできる。これにより半導体装置１００の反りを小さくできるため、外部回路との接続信頼性を向上させることができる。そのうえ、収縮応力によるチップ破壊も抑えることができる。また本実施形態１のように連続した配線基板１１８を一括成型する場合、反りを小さくできるためダイシングで個片に裁断する方法において位置ズレを生じずに裁断することができる。   Even when a transparent resin is separately applied to the perforated region as described in Patent Document 1, it is not necessary to polish the top surface of the resin necessary for the application method. In addition, only the sensor function region (light receiving function region) 103 is covered with a resin (transparent resin) 106 having a high shrinkage rate, and the connection portion between the electrode portion 108c of the wiring substrate 101 and the semiconductor element 102 is sealed with a low shrinkage rate. Since it is covered with the resin 107, it is possible to suppress a decrease in connection reliability such as disconnection of the connection portion between the electrode portion 108 of the wiring substrate 101 and the semiconductor element 102 due to shrinkage of the resin (transparent resin) 106 or insufficient adhesive force. Furthermore, since the volume of the resin (transparent resin) 106 can be reduced as compared with the configurations described in Patent Documents 1 and 3, the shrinkage amount of the resin (transparent resin) 106 can be reduced. As a result, warpage of the semiconductor device 100 can be reduced, and connection reliability with an external circuit can be improved. In addition, chip breakage due to shrinkage stress can be suppressed. Further, when the continuous wiring boards 118 are collectively formed as in the first embodiment, the warpage can be reduced, and therefore, the method of cutting into individual pieces by dicing can be performed without causing positional deviation.

また、接着力が弱い樹脂（透明樹脂）１０６と半導体素子１０２との接着面積を小さくすることができるため、半導体素子１０２からの樹脂（透明樹脂）１０６の剥離の発生を抑えることができる。このため、剥離が原因となる外部回路との実装不良や電気接続不良を抑えることができる。   In addition, since the bonding area between the resin (transparent resin) 106 having a weak adhesive force and the semiconductor element 102 can be reduced, the occurrence of peeling of the resin (transparent resin) 106 from the semiconductor element 102 can be suppressed. For this reason, it is possible to suppress a mounting failure and an electrical connection failure with an external circuit caused by peeling.

更に、特許文献１及び３記載の構造では、透明樹脂を塗布する領域は配線基板側の端面の面積が、その端面に対面する面よりも面積が大きい、側面が天面に開いたテーパー形状になる。これに対し、本実施形態１では、樹脂（透明樹脂）１０６の柱状構造１０６ａは、半導体装置１００の厚さ方向の断面積が、光学機能領域１０３側から半導体装置１００の表面（光学機能領域側の面に対向する面）へ向かって徐々に減少する逆テーパー形状にできる。よって、樹脂（透明樹脂）１０６に大きな応力負荷が加わっても樹脂（透明樹脂）１０６が離脱することはない。   Furthermore, in the structures described in Patent Documents 1 and 3, the area where the transparent resin is applied has a tapered shape in which the area of the end surface on the wiring board side is larger than the surface facing the end surface, and the side surface is open to the top surface. Become. In contrast, in Embodiment 1, the columnar structure 106a of the resin (transparent resin) 106 has a cross-sectional area in the thickness direction of the semiconductor device 100 from the optical function region 103 side to the surface of the semiconductor device 100 (optical function region side). It is possible to make a reverse taper shape that gradually decreases toward the surface facing the surface of the surface. Therefore, even if a large stress load is applied to the resin (transparent resin) 106, the resin (transparent resin) 106 does not come off.

また、図８に示すように樹脂（透明樹脂）１０６は連続しており、ダイシングライン１１１における断面積が小さいため、ダイシングにて個片に裁断後の半導体装置１００の端面のバリやダレを防止できる。   Further, as shown in FIG. 8, the resin (transparent resin) 106 is continuous, and the cross-sectional area of the dicing line 111 is small. it can.

他に、特許文献１及び４記載の構成のように特殊なコーティングを施したガラス板を用いることがないため、接着材も不要になりレーザー光により変色をすることもない。また、ガラス板を取りつける領域が不要のため半導体装置を小型化することができる。更に高価なガラス板を用いないため製造コストを低くすることができる。   In addition, since a glass plate with a special coating as in the configurations described in Patent Documents 1 and 4 is not used, an adhesive is not required and the laser beam does not change color. Further, the semiconductor device can be miniaturized because an area for attaching the glass plate is not required. Furthermore, since an expensive glass plate is not used, the manufacturing cost can be reduced.

その他、特許文献２及び４記載の製造方法のように、別途樹脂フィルムを使用せずにセンサ機能領域に封止樹脂が漏れることがなく良好な感度を有するセンサ機能領域を有した半導体装置１００を低コストで提供できる。また特許文献１記載の製造方法のように配線基板を刳り貫く掘削加工が不必要のため、半導体装置を小型化することができる。また加工時間がかからないため製造コストを安くすることができる。   In addition, as in the manufacturing methods described in Patent Documents 2 and 4, the semiconductor device 100 having a sensor function region having a good sensitivity without using a resin film and preventing the sealing resin from leaking into the sensor function region. Can be provided at low cost. In addition, since the excavation process that penetrates the wiring board is not required as in the manufacturing method described in Patent Document 1, the semiconductor device can be downsized. Moreover, since the processing time is not required, the manufacturing cost can be reduced.

加えて樹脂（透明樹脂）１０６の柱状構造１０６ａを逆テーパーに形成できるため、センサ機能領域１０３が受光機能領域である場合、受光する光信号はこの側面で乱反射することがないためセンサの誤反応を抑えることができる。同様に、センサ機能領域が発光機能領域である場合、側面で反射した光が外部に乱反射することがないため発光輝度ムラを抑えることができる。   In addition, since the columnar structure 106a of the resin (transparent resin) 106 can be formed in a reverse taper, when the sensor function area 103 is a light receiving function area, the received light signal is not irregularly reflected on this side surface, so that the sensor malfunctions. Can be suppressed. Similarly, when the sensor function area is a light emission function area, the light reflected from the side surface is not irregularly reflected to the outside, so that unevenness in light emission luminance can be suppressed.

同様に、センサ機能領域１０３を圧力感知機能領域や磁気感知装置にすることも、容易であり、同じ製造設備で製造できるため製造コストを抑えることができるという利点がある。樹脂１０６が弾性体のため同時に圧力センサとしても使用することができる。   Similarly, it is easy to make the sensor function area 103 a pressure sensing function area or a magnetic sensing device, and there is an advantage that the manufacturing cost can be reduced because it can be manufactured by the same manufacturing equipment. Since the resin 106 is an elastic body, it can be used as a pressure sensor at the same time.

加えて、封止樹脂１０７を充填する工程と同時にセンサ機能領域１０３の上面に樹脂（透明樹脂）１０６を形成することができるため、別途センサ機能領域１０３の上部に樹脂を塗布する必要がなく、簡単かつ低コストで半導体装置を製造することができる。   In addition, since the resin (transparent resin) 106 can be formed on the upper surface of the sensor function region 103 simultaneously with the step of filling the sealing resin 107, there is no need to separately apply resin on the upper portion of the sensor function region 103. A semiconductor device can be manufactured easily and at low cost.

（実施形態２）
本実施形態に係る半導体装置は、実施形態１に係る半導体装置１００と比較してほぼ同じであるが、樹脂（透明樹脂）は平面状構造を有さず、柱状構造のみを有し、その柱状構造には、ピンが押圧されたことによって型取られた跡がある点が異なる。以下、本実施形態に係る半導体装置について、実施形態１に係る半導体装置１００と異なる点を中心に述べる。 (Embodiment 2)
The semiconductor device according to the present embodiment is substantially the same as the semiconductor device 100 according to the first embodiment, but the resin (transparent resin) does not have a planar structure, only a columnar structure, and its columnar shape. The structure is different in that there is a trace taken by pressing the pin. Hereinafter, the semiconductor device according to the present embodiment will be described focusing on differences from the semiconductor device 100 according to the first embodiment.

〜半導体装置の構造〜
本実施形態に係る半導体装置の構造を図１０Ａ〜図１１Ｂを用いて説明する。 ~ Structure of semiconductor device ~
The structure of the semiconductor device according to this embodiment will be described with reference to FIGS. 10A to 11B.

図１０Ａは、実施形態２に係る半導体装置の構成を示す断面図であり、図１０Ｂは、図１０Ａに示した構成のうち、範囲Ｂを拡大して示す断面図である。また、図１１Ａは、実施形態２に係る半導体装置の構成を示す上面図であり、図１１Ｂは、図１１Ａに示した構成の一部を拡大して示す上面図である。   10A is a cross-sectional view illustrating a configuration of the semiconductor device according to the second embodiment, and FIG. 10B is a cross-sectional view illustrating an enlarged range B in the configuration illustrated in FIG. 10A. FIG. 11A is a top view showing the configuration of the semiconductor device according to the second embodiment, and FIG. 11B is an enlarged top view showing a part of the configuration shown in FIG. 11A.

本実施形態に係る半導体装置２００は、実施形態１に係る半導体装置１００と比較して、樹脂（透明樹脂）１０６に代わり、樹脂（透明樹脂）２０６を有する。この樹脂（透明樹脂）２０６は、実施形態１に係る半導体装置１００の樹脂（透明樹脂）１０６の柱状構造１０６ａとほぼ同じである。つまり、樹脂（透明樹脂）２０６は、樹脂（透明樹脂）１０６と比較して、平板状構造を有さず、柱状構造からなる。   The semiconductor device 200 according to the present embodiment includes a resin (transparent resin) 206 instead of the resin (transparent resin) 106 as compared with the semiconductor device 100 according to the first embodiment. This resin (transparent resin) 206 is substantially the same as the columnar structure 106 a of the resin (transparent resin) 106 of the semiconductor device 100 according to the first embodiment. That is, the resin (transparent resin) 206 does not have a flat plate-like structure as compared with the resin (transparent resin) 106 and has a columnar structure.

このように構成された樹脂（透明樹脂）２０６は、樹脂（透明樹脂）１０６と比較して、小さい体積で形成できるので、材料の使用量を低減させることができ製造コストを抑制できる。   Since the resin (transparent resin) 206 configured as described above can be formed with a smaller volume as compared with the resin (transparent resin) 106, the amount of material used can be reduced and the manufacturing cost can be suppressed.

また、樹脂（透明樹脂）２０６が平板状構造を有さないので、複数の半導体装置２００を一括して形成した後にダイシングで個片化することにより半導体装置２００を複数個製造する場合、ダイシングブレードにて裁断する位置であるダイシングライン上に樹脂（透明樹脂）２０６が位置しない。これにより、ダイシングにて個片に裁断された後の半導体装置２００の端面に発生するバリやダレを一層防止できる。   In addition, since the resin (transparent resin) 206 does not have a flat plate structure, when a plurality of semiconductor devices 200 are manufactured by dicing into pieces after forming a plurality of semiconductor devices 200 at once, a dicing blade is used. The resin (transparent resin) 206 is not positioned on the dicing line, which is the position to be cut at the step. Thereby, the burr | flash and sagging which generate | occur | produce on the end surface of the semiconductor device 200 after being cut | divided into the piece by dicing can be prevented further.

樹脂（透明樹脂）２０６の天面（図中上の面）には、金型で成形するときに樹脂（透明樹脂）２０６をピンで押し上げた跡２１９が設けられる。この跡は凸でも凹でも良い。つまり、ピンが押圧されたことによって型取られた跡がある。   The top surface (upper surface in the drawing) of the resin (transparent resin) 206 is provided with a mark 219 obtained by pushing up the resin (transparent resin) 206 with a pin when molding with a mold. This trace may be convex or concave. In other words, there is a mark taken by pressing the pin.

〜半導体装置の製造方法〜
次に、実施形態２に係る半導体装置２００の製造方法について説明する。半導体装置２００の製造方法は、実施形態１に係る半導体装置１００の製造方法と比較し、下金型が凹部を有し、この凹部に成形された樹脂（透明樹脂）２０６の一部を入れ込むことにより、樹脂（透明樹脂）２０６を下金型に保持させる点と、下金型が、当該下金型を貫通し、成形された樹脂（透明樹脂）２０６に接するピンを有し、ピンを上金型方向へ稼動することにより、樹脂（透明樹脂）２０６をセンサ機能領域（受光機能領域）１０３に当接させる点が異なる。以下、図面を用いて、半導体装置２００の製造方法について詳細に説明する。 -Semiconductor device manufacturing method-
Next, a method for manufacturing the semiconductor device 200 according to the second embodiment will be described. The manufacturing method of the semiconductor device 200 is lower than the manufacturing method of the semiconductor device 100 according to the first embodiment, and the lower mold has a recess, and a part of the resin (transparent resin) 206 formed in the recess is inserted. By this, the resin (transparent resin) 206 is held in the lower mold, and the lower mold has a pin that penetrates the lower mold and contacts the molded resin (transparent resin) 206. The difference is that the resin (transparent resin) 206 is brought into contact with the sensor function area (light receiving function area) 103 by operating in the upper mold direction. Hereinafter, a method for manufacturing the semiconductor device 200 will be described in detail with reference to the drawings.

図１２Ａ〜図１９は、実施形態２に係る半導体装置２００の製造方法の一部を示す図である。   12A to 19 are diagrams illustrating a part of the method for manufacturing the semiconductor device 200 according to the second embodiment.

図１２Ａは、実施形態２に係る半導体装置２００の金型による製造方法のうち、配線基板及び樹脂（透明樹脂）２０６を金型に設置した時の略断面図である。   FIG. 12A is a schematic cross-sectional view when a wiring board and a resin (transparent resin) 206 are installed in a mold in the method for manufacturing a semiconductor device 200 according to Embodiment 2 using a mold.

まず、図３Ａに示した半導体装置１００の製造方法と同様に、上金型１０４に、複数の半導体素子１０２が一定寸法間隔で搭載された、連続した配線基板１１８を保持させる。   First, similarly to the method for manufacturing the semiconductor device 100 shown in FIG. 3A, the upper mold 104 holds a continuous wiring board 118 on which a plurality of semiconductor elements 102 are mounted at regular intervals.

一方、樹脂（透明樹脂）２０６を金型で成形する。樹脂（透明樹脂）２０６の形状の一例を図１２Ｂに示す。樹脂（透明樹脂）２０６の天面は、図３Ｂに示した凸部の天面の形状と同様に、凸状にすることでセンサ機能領域（受光機能領域）１０３との密着性を向上させている。   On the other hand, a resin (transparent resin) 206 is molded with a mold. An example of the shape of the resin (transparent resin) 206 is shown in FIG. 12B. The top surface of the resin (transparent resin) 206 has a convex shape similar to the shape of the top surface of the convex portion shown in FIG. 3B, thereby improving the adhesion with the sensor function area (light receiving function area) 103. Yes.

その他、樹脂（透明樹脂）２０６の凸部の形状は、図１２Ｃ〜図１２Ｅに示すような形状でもよい。   In addition, the shape of the convex portion of the resin (transparent resin) 206 may be a shape as shown in FIGS. 12C to 12E.

この樹脂（透明樹脂）２０６は粘弾性を有する熱硬化性樹脂であり、その粘弾性は硬化反応率で制御できる。また、粘弾性は自重で形状が保持される程度が望ましい。樹脂（透明樹脂）２０６の高さは、下金型２０５の掘り込み高さから連続した配線基板１１８と半導体素子１０２の高さを差し引いた長さよりもやや長い長さとする。望ましくは５０マイクロメートルから２００マイクロメートルである。   This resin (transparent resin) 206 is a thermosetting resin having viscoelasticity, and the viscoelasticity can be controlled by a curing reaction rate. The viscoelasticity is preferably such that the shape is maintained by its own weight. The height of the resin (transparent resin) 206 is slightly longer than the length obtained by subtracting the height of the continuous wiring substrate 118 and the semiconductor element 102 from the digging height of the lower mold 205. Desirably, it is 50 micrometers to 200 micrometers.

ここで、樹脂（透明樹脂）２０６は、具体的材料としては、主としてエポキシ樹脂、ユリア樹脂、シリコーン樹脂などの耐候性に優れた透明樹脂が好適に用いられる。シリコーン樹脂を用いることが特に好ましい。   Here, as a specific material for the resin (transparent resin) 206, a transparent resin having excellent weather resistance such as an epoxy resin, a urea resin, and a silicone resin is preferably used. It is particularly preferable to use a silicone resin.

次に、図１２Ａに示すように連続した配線基板１１８を上金型１０４に保持する（配線基板保持工程）。その連続した配線基板１１８の固定は上金型１０４内に設置した後、真空吸着で行った。その他、冶具により連続した配線基板１１８の端部を保持してもよい。   Next, as shown in FIG. 12A, the continuous wiring board 118 is held in the upper mold 104 (wiring board holding step). The continuous wiring board 118 was fixed by vacuum suction after being placed in the upper mold 104. In addition, you may hold | maintain the edge part of the continuous wiring board 118 with a jig.

また、上金型１０４に対向する面に下金型２０５が設置されている。この下金型２０５は、本発明の凹部に相当するポット２７０が形成され、このポット２７０に成形された樹脂（透明樹脂）２０６を入れ込むことにより、樹脂（透明樹脂）２０６を保持する。つまり、センサ機能領域（受光機能領域）１０３に対向し、下金型２０５に掘り込んだポット２７０に樹脂（透明樹脂）２０６を設置する。このとき、樹脂（透明樹脂）２０６の凸状に形成された天面が上方向に向くように設置する。ここで、上金型１０４及び下金型１０５は１５０℃から１９０℃に加熱されている。   Further, a lower mold 205 is installed on the surface facing the upper mold 104. The lower mold 205 is formed with a pot 270 corresponding to the concave portion of the present invention, and holds the resin (transparent resin) 206 by inserting the molded resin (transparent resin) 206 into the pot 270. That is, the resin (transparent resin) 206 is placed in the pot 270 that is dug in the lower mold 205 so as to face the sensor function area (light receiving function area) 103. At this time, the resin (transparent resin) 206 is installed such that the top surface formed in a convex shape faces upward. Here, the upper mold 104 and the lower mold 105 are heated from 150 ° C. to 190 ° C.

次に、図１３に示すように上金型１０４と下金型１０５とを閉じ、連続した配線基板１１８の周辺部を上金型１０４と下金型１０５とでクランプし、その後の工程で封止樹脂１０７が注入されても上金型１０４と下金型１０５とが開かないように圧力を付与する。   Next, as shown in FIG. 13, the upper mold 104 and the lower mold 105 are closed, and the peripheral portion of the continuous wiring board 118 is clamped by the upper mold 104 and the lower mold 105, and sealed in the subsequent steps. Pressure is applied so that the upper mold 104 and the lower mold 105 do not open even when the stop resin 107 is injected.

その後、図１４に示すように、下金型１０５に設けられ、ピン保持板２９０に保持されたピン２８０を稼動させて樹脂（透明樹脂）２０６を突き上げる。これにより樹脂（透明樹脂）２０６とセンサ機能領域（受光機能領域）１０３とは隙間なく接触する。言い換えると、ピン保持板２９０を稼動することによりピン２８０を上金型１０４へ稼動させ、樹脂（透明樹脂）２０６をセンサ機能領域（受光機能領域）１０３に当接させる。このとき、樹脂（透明樹脂）２０６の天面は押しつぶされ変形する。   Thereafter, as shown in FIG. 14, a pin 280 provided on the lower mold 105 and held by the pin holding plate 290 is operated to push up the resin (transparent resin) 206. As a result, the resin (transparent resin) 206 and the sensor function area (light receiving function area) 103 are in contact with each other without a gap. In other words, the pin 280 is moved to the upper mold 104 by operating the pin holding plate 290, and the resin (transparent resin) 206 is brought into contact with the sensor function area (light receiving function area) 103. At this time, the top surface of the resin (transparent resin) 206 is crushed and deformed.

ここで、樹脂（透明樹脂）２０６は弾性体であるため半導体素子１０２よりも柔らかく、接触しても半導体素子１０２を傷つけたり、破壊することはない。   Here, since the resin (transparent resin) 206 is an elastic body, the resin 206 is softer than the semiconductor element 102 and does not damage or destroy the semiconductor element 102 even if it comes into contact.

次に、図１５に示すように、下金型２０５に設けられた封止樹脂注入口１１３から封止樹脂１０７を金型内に充填させる。封止樹脂充填方法は一般に用いられるトランスファー成型である。言い換えると、上金型１０４と下金型１０５との隙間に封止樹脂１０７を充填する（封止樹脂形成工程）。これにより、連続した配線基板１１８の半導体素子１０２の搭載面、半導体素子１０２、ワイヤ１０９、樹脂（透明樹脂）２０６の天面を除く側面は封止樹脂１０７によって封止される。ここで、樹脂（透明樹脂）１０６とセンサ機能領域（受光機能領域）１０３とは隙間なく接触しているため、樹脂（透明樹脂）１０６とセンサ機能領域（受光機能領域）１０３との間に封止樹脂１０７が入り込むことはない。   Next, as shown in FIG. 15, the mold is filled with the sealing resin 107 from the sealing resin inlet 113 provided in the lower mold 205. The sealing resin filling method is generally used transfer molding. In other words, the sealing resin 107 is filled in the gap between the upper mold 104 and the lower mold 105 (sealing resin forming step). Thereby, the mounting surface of the semiconductor element 102 on the continuous wiring substrate 118, the side surfaces of the semiconductor element 102, the wires 109, and the top surface of the resin (transparent resin) 206 are sealed with the sealing resin 107. Here, since the resin (transparent resin) 106 and the sensor function area (light receiving function area) 103 are in contact with each other without a gap, the resin (transparent resin) 106 and the sensor function area (light receiving function area) 103 are sealed. The stop resin 107 does not enter.

次に、図１６に示すように、上金型１０４と下金型１０５との隙間への封止樹脂１０７の充填が完了後、封止樹脂１０７を硬化させる。   Next, as shown in FIG. 16, after the filling of the sealing resin 107 into the gap between the upper mold 104 and the lower mold 105 is completed, the sealing resin 107 is cured.

次に、図１７に示すように、上金型１０４と下金型１０５とを開き、連続した配線基板１１８を取り出す。図１８に、上金型１０４から取り出した連続した配線基板１１８、樹脂（透明樹脂）２０６及び封止樹脂１０７の構成を示す上面図である。なお、この上面図は、連続した配線基板１１８を下金型１０５側から見た図である。   Next, as shown in FIG. 17, the upper mold 104 and the lower mold 105 are opened, and the continuous wiring board 118 is taken out. FIG. 18 is a top view showing the configuration of the continuous wiring board 118, resin (transparent resin) 206, and sealing resin 107 taken out from the upper mold 104. In addition, this top view is the figure which looked at the continuous wiring board 118 from the lower metal mold | die 105 side.

次に、図１９に示すように、連続した配線基板１１８を、ダイシングライン１１１においてダイシングブレード１１４で切断し、個々の配線基板１０１からなる図１０Ａに示す半導体装置２００が複数個出来上がる。言い換えると、連続した配線基板１１８をセンサ機能領域（受光機能領域）１０３ごとに分割することにより、複数の半導体装置２００に分割する。このとき、ダイシングライン１１１上に樹脂（透明樹脂）２０６は位置しない。これにより、ダイシングにて個片に裁断された後の半導体装置２００の端面に発生するバリやダレを一層防止できる。   Next, as shown in FIG. 19, a continuous wiring board 118 is cut by a dicing blade 114 in a dicing line 111, and a plurality of semiconductor devices 200 shown in FIG. In other words, the continuous wiring board 118 is divided into the plurality of semiconductor devices 200 by dividing each of the sensor function areas (light receiving function areas) 103. At this time, the resin (transparent resin) 206 is not positioned on the dicing line 111. Thereby, the burr | flash and sagging which generate | occur | produce on the end surface of the semiconductor device 200 after being cut | divided into the piece by dicing can be prevented further.

以上のように、本実施形態に係る半導体装置２００の製造方法は、実施形態１に係る半導体装置１００の製造方法と比較して、下金型２０５がポット２７０を有し、このポット２７０に成形された樹脂（透明樹脂）２０６の一部を入れ込むことにより、樹脂（透明樹脂）２０６を下金型２０５に保持させる点と、下金型２０５に当該下金型２０５を貫通し、成形された樹脂（透明樹脂）２０６に接するピン２８０を有し、ピン２８０を上金型１０４方向へ稼動することにより、樹脂（透明樹脂）２０６をセンサ機能領域（受光機能領域）１０３に当接させる点が異なる。   As described above, in the method for manufacturing the semiconductor device 200 according to the present embodiment, the lower mold 205 has the pot 270 and the pot 270 is molded as compared with the method for manufacturing the semiconductor device 100 according to the first embodiment. A part of the resin (transparent resin) 206 is inserted to hold the resin (transparent resin) 206 in the lower mold 205, and the lower mold 205 penetrates the lower mold 205 to be molded. The resin (transparent resin) 206 is in contact with the sensor function area (light receiving function area) 103 by moving the pin 280 in the direction of the upper mold 104. Is different.

これにより、実施形態２においては、樹脂（透明樹脂）２０６の使用量を更に低減させることができ、さらに、ダイシングライン１１１上に樹脂（透明樹脂）２０６が位置しないため、ダイシングにて個片に裁断後の半導体装置２００の端面のバリやダレを一層防止できる。また、高価な樹脂（透明樹脂）６の使用量を減らすことができるので製造コストを低くできる。   Thereby, in Embodiment 2, since the usage amount of the resin (transparent resin) 206 can be further reduced, and the resin (transparent resin) 206 is not located on the dicing line 111, it is separated into individual pieces by dicing. It is possible to further prevent burrs and sagging of the end face of the semiconductor device 200 after cutting. Moreover, since the usage-amount of expensive resin (transparent resin) 6 can be reduced, manufacturing cost can be lowered.

（実施形態３）
本実施形態に係る半導体装置は、実施形態２に係る半導体装置２００と比較してほぼ同じであるが、半導体素子が複数のセンサ機能領域（受光領域）を含む点が異なる。以下、本実施形態に係る半導体装置について、実施形態２に係る半導体装置２００と異なる点を中心に述べる。 (Embodiment 3)
The semiconductor device according to the present embodiment is substantially the same as the semiconductor device 200 according to the second embodiment, except that the semiconductor element includes a plurality of sensor function areas (light receiving areas). Hereinafter, the semiconductor device according to the present embodiment will be described focusing on differences from the semiconductor device 200 according to the second embodiment.

〜半導体装置の構造〜
本実施形態に係る半導体装置の構造を図２０及び図２１を用いて説明する。 ~ Structure of semiconductor device ~
The structure of the semiconductor device according to the present embodiment will be described with reference to FIGS.

図２０は、実施形態３に係る半導体装置の構成を示す断面図であり、図２１は、実施形態３に係る半導体装置の構成を示す上面図である。なお、図２０は、図２１のＣ−Ｃ’断面での断面構成を示している。   FIG. 20 is a cross-sectional view illustrating the configuration of the semiconductor device according to the third embodiment, and FIG. 21 is a top view illustrating the configuration of the semiconductor device according to the third embodiment. FIG. 20 shows a cross-sectional configuration taken along the line C-C ′ of FIG. 21.

本実施形態に係る半導体装置３００は、実施形態２に係る半導体装置２００と比較して、半導体素子１０２に代わり、複数のセンサ機能領域３０３ａ及び３０３ｂが形成された半導体素子３０２を備える。このセンサ機能領域３０３ａ及び３０３ｂは、本発明のサブセンサ機能領域に相当する。   The semiconductor device 300 according to the present embodiment includes a semiconductor element 302 in which a plurality of sensor function regions 303a and 303b are formed instead of the semiconductor element 102, as compared with the semiconductor device 200 according to the second embodiment. The sensor function areas 303a and 303b correspond to the sub sensor function areas of the present invention.

また、樹脂（透明樹脂）２０６は、各センサ機能領域３０３ａ及び３０３ｂに対応して形成されている。   The resin (transparent resin) 206 is formed corresponding to each sensor function area 303a and 303b.

〜半導体装置の製造方法〜
次に、実施形態３に係る半導体装置３００の製造方法について説明する。なお、本実施の形態に係る半導体装置３００の製造方法は、実施形態２に係る半導体装置２００の製造方法とほぼ同じである。 -Semiconductor device manufacturing method-
Next, a method for manufacturing the semiconductor device 300 according to the third embodiment will be described. Note that the manufacturing method of the semiconductor device 300 according to the present embodiment is substantially the same as the manufacturing method of the semiconductor device 200 according to the second embodiment.

図２２〜図２６は、実施形態３に係る半導体装置３００の製造方法の一部を示す図である。   22 to 26 are diagrams illustrating a part of the method for manufacturing the semiconductor device 300 according to the third embodiment.

図２２は、実施形態３に係る半導体装置３００の金型による製造方法のうち、配線基板及び樹脂（透明樹脂）２０６を金型に設置した時の略断面図である。   FIG. 22 is a schematic cross-sectional view when the wiring board and the resin (transparent resin) 206 are installed in the mold in the method for manufacturing the semiconductor device 300 according to the third embodiment using the mold.

まず、図３Ａに示した半導体装置１００の製造方法と同様に、上金型１０４に、複数の半導体素子３０２が一定寸法間隔で搭載された、連続した配線基板１１８を保持させる。   First, similarly to the method for manufacturing the semiconductor device 100 shown in FIG. 3A, a continuous wiring board 118 on which a plurality of semiconductor elements 302 are mounted at regular intervals is held on the upper mold 104.

一方、樹脂（透明樹脂）２０６を金型で成形する。   On the other hand, a resin (transparent resin) 206 is molded with a mold.

次に、図２２に示すように連続した配線基板１１８を上金型１０４に保持する。その連続した配線基板１１８の固定は上金型１０４内に設置した後、真空吸着することにより行った。   Next, the continuous wiring board 118 is held in the upper mold 104 as shown in FIG. The continuous wiring board 118 was fixed by placing it in the upper mold 104 and then vacuum-sucking it.

また、上金型１０４に対向する面に下金型３０５が設置されている。この下金型３０５は、本発明の凹部に相当するポット２７０が形成され、このポット２７０に成形された樹脂（透明樹脂）２０６を入れ込むことにより、樹脂（透明樹脂）２０６を保持する。つまり、各センサ機能領域（受光機能領域）３０３ａ及び３０３ｂに対向し、下金型３０５に掘り込んだポット２７０に樹脂（透明樹脂）２０６を設置する。このとき、樹脂（透明樹脂）２０６の凸状に形成された天面が上方向に向くように設置する。ここで、上金型１０４及び下金型３０５は１５０℃から１９０℃に加熱されている。   A lower mold 305 is installed on the surface facing the upper mold 104. The lower mold 305 has a pot 270 corresponding to the concave portion of the present invention, and holds the resin (transparent resin) 206 by inserting the molded resin (transparent resin) 206 into the pot 270. That is, the resin (transparent resin) 206 is placed in the pot 270 that is dug in the lower mold 305 so as to face the sensor function areas (light receiving function areas) 303a and 303b. At this time, the resin (transparent resin) 206 is installed such that the top surface formed in a convex shape faces upward. Here, the upper mold 104 and the lower mold 305 are heated from 150 ° C. to 190 ° C.

次に、図２３に示すように上金型１０４と下金型３０５とを閉じ、連続した配線基板１１８の周辺部を上金型１０４と下金型３０５とでクランプし、その後の工程で封止樹脂１０７が注入されても上金型１０４と下金型３０５とが開かないように圧力を付与する。   Next, as shown in FIG. 23, the upper mold 104 and the lower mold 305 are closed, and the peripheral portion of the continuous wiring board 118 is clamped by the upper mold 104 and the lower mold 305, and sealed in the subsequent steps. Pressure is applied so that the upper mold 104 and the lower mold 305 do not open even when the stop resin 107 is injected.

その後、図２４に示すように、下金型３０５に設けられ、ピン保持板３９０に保持されたピン３８０を稼動させて樹脂（透明樹脂）２０６を突き上げる。これにより樹脂（透明樹脂）２０６とセンサ機能領域（受光機能領域）３０３ａ及び３０３ｂは隙間なく接触する。このとき、樹脂（透明樹脂）２０６の天面は押しつぶされ変形する。   Thereafter, as shown in FIG. 24, the pin (380) provided on the lower mold 305 and held by the pin holding plate 390 is operated to push up the resin (transparent resin) 206. Accordingly, the resin (transparent resin) 206 and the sensor function area (light receiving function area) 303a and 303b are in contact with each other without a gap. At this time, the top surface of the resin (transparent resin) 206 is crushed and deformed.

ここで、樹脂（透明樹脂）２０６は弾性体であるため半導体素子３０２よりも柔らかく、接触しても半導体素子３０２を傷つけたりや破壊することはない。   Here, since the resin (transparent resin) 206 is an elastic body, the resin 206 is softer than the semiconductor element 302 and does not damage or destroy the semiconductor element 302 even if it contacts.

次に、図２５に示すように下金型３０５に設けられた封止樹脂注入口１１３から封止樹脂１０７を金型内に充填させる。封止樹脂充填方法は一般に用いられるトランスファー成型である。言い換えると、上金型１０４と下金型３０５との隙間に封止樹脂１０７を充填する（封止樹脂形成工程）。これにより、連続した配線基板１１８の半導体素子３０２の搭載面、半導体素子３０２、ワイヤ１０９、樹脂（透明樹脂）２０６の天面を除く側面は封止樹脂１０７によって封止される。樹脂（透明樹脂）２０６とセンサ機能領域３０３ａ及び３０３ｂは隙間なく接触しているため、樹脂（透明樹脂）２０６とセンサ機能領域３０３ａ及び３０３ｂとの間に封止樹脂１０７が入り込むことはない。   Next, as shown in FIG. 25, the mold is filled with the sealing resin 107 from the sealing resin inlet 113 provided in the lower mold 305. The sealing resin filling method is generally used transfer molding. In other words, the sealing resin 107 is filled in the gap between the upper mold 104 and the lower mold 305 (sealing resin forming step). As a result, the mounting surface of the semiconductor element 302 of the continuous wiring substrate 118, the side surfaces of the semiconductor element 302, the wires 109, and the top surface of the resin (transparent resin) 206 are sealed with the sealing resin 107. Since the resin (transparent resin) 206 and the sensor function areas 303a and 303b are in contact with each other without a gap, the sealing resin 107 does not enter between the resin (transparent resin) 206 and the sensor function areas 303a and 303b.

次に、封止樹脂１０７の金型内への充填が完了後、封止樹脂１０７を硬化させる。   Next, after the filling of the sealing resin 107 into the mold is completed, the sealing resin 107 is cured.

次に、上金型１０４と下金型３０５とを開き、連続した配線基板１１８を取り出す。   Next, the upper mold 104 and the lower mold 305 are opened, and the continuous wiring board 118 is taken out.

次に、図２６に示すように連続した配線基板１１８をダイシングブレード１１４で切断し、個々の配線基板１０１からなる図２０に示す半導体装置３００が複数個出来上がる。言い換えると、連続した配線基板１１８をセンサ機能領域（受光機能領域）３０３ａ及び３０３ｂからなる複数のセンサ機能領域ごとに分割することにより、複数の半導体装置３００に分割する。   Next, as shown in FIG. 26, a continuous wiring board 118 is cut with a dicing blade 114, and a plurality of semiconductor devices 300 shown in FIG. In other words, the continuous wiring board 118 is divided into a plurality of semiconductor device 300 by dividing the continuous wiring board 118 into a plurality of sensor function regions including sensor function regions (light receiving function regions) 303a and 303b.

本実施形態３においては、樹脂（透明樹脂）２０６の形状が逆テーパーにできるため側面で信号が乱反射し干渉することなく、複数のセンサ機能領域３０３ａ及び３０３ｂ間の距離を短く配置できる。例えば、複数の波長レーザーを受光する機能を有する同一半導体素子を小型にできるため、その半導体製造装置も小型化することができる。これによって製造コストも低く抑えることができる。   In the third embodiment, since the shape of the resin (transparent resin) 206 can be inversely tapered, the distance between the plurality of sensor function regions 303a and 303b can be shortened without causing irregular reflection and interference of signals on the side surfaces. For example, since the same semiconductor element having the function of receiving a plurality of wavelength lasers can be reduced in size, the semiconductor manufacturing apparatus can also be reduced in size. As a result, the manufacturing cost can be kept low.

なお、本実施形態において、サブセンサ機能領域は２つであったが、サブセンサ領域は複数であればよく、３つでも４つでも構わない。   In the present embodiment, the number of sub sensor function areas is two. However, the number of sub sensor areas may be plural, and may be three or four.

以上、本発明に係る半導体装置及びその製造方法について、実施形態１〜３に基づき説明したが、本発明は、これら実施形態に限定されるものではない。本発明の趣旨を逸脱しない限り、異なる実施形態の組み合わせや、当業者が思いつく各種変形を本実施形態に施したものも、本発明の範囲内に含まれる。   The semiconductor device and the manufacturing method thereof according to the present invention have been described based on the first to third embodiments, but the present invention is not limited to these embodiments. Unless it deviates from the meaning of the present invention, combinations of different embodiments and various modifications that can be conceived by those skilled in the art are also included in the scope of the present invention.

例えば、上記各実施形態では、センサ機能領域を受光機能領域としたが、これに限らない。例えば、上述したように、センサ機能領域は、発光機能領域であってもよいし、圧力感知機能領域であってもよいし、磁気感知機能領域であってもよい。以下、センサ機能領域が圧力感知機能領域である場合の半導体装置について述べる。センサ機能領域が圧力感知機能領域である場合、圧力感知機能領域上を覆う樹脂１０６は弾性体であるため、この樹脂１０６は外部からの圧力信号を圧力感知機能領域に伝えることが可能である。これにより、半導体素子に搭載された圧力感知機能領域に埃などの異物が付着することがなく、小型で接続信頼性の高い圧力感知機能を有した半導体装置を提供できる。なお、上記各実施形態では、樹脂１０６は透明であるとしたが、センサ機能領域が圧力感知機能領域及び磁気感知機能領域である場合、樹脂１０６は光を透過しなくてもよい。   For example, in each of the above embodiments, the sensor function area is the light receiving function area, but the present invention is not limited to this. For example, as described above, the sensor function area may be a light emission function area, a pressure sensing function area, or a magnetic sensing function area. Hereinafter, a semiconductor device when the sensor function area is a pressure sensing function area will be described. When the sensor function area is a pressure sensing function area, since the resin 106 covering the pressure sensing function area is an elastic body, the resin 106 can transmit an external pressure signal to the pressure sensing function area. As a result, it is possible to provide a semiconductor device having a pressure sensing function that is compact and has high connection reliability, without foreign matter such as dust being attached to the pressure sensing function region mounted on the semiconductor element. In each of the above embodiments, the resin 106 is transparent. However, if the sensor function area is a pressure sensing function area and a magnetic sensing function area, the resin 106 may not transmit light.

以上説明したように、本発明に係る半導体装置の製造方法は、例えば光ピックアップ装置の製造方法といった種々の電子機器の製造方法に有用である。   As described above, the semiconductor device manufacturing method according to the present invention is useful for various electronic device manufacturing methods such as an optical pickup device manufacturing method.

１００、２００、３００ 半導体装置
１０１ 配線基板
１０２、３０２ 半導体素子
１０３、３０３ａ、３０３ｂ センサ機能領域（受光機能領域）
１０４ 上金型
１０５、２０５、３０５ 下金型
１０６、２０６ 樹脂（透明樹脂）
１０６ａ 柱状構造
１０６ｂ 平板状構造
１０７ 封止樹脂
１０８ａ 貫通電極
１０８ｂ 外部接続電極
１０８ｃ 電極部
１０９ ワイヤ
１１０ ダイボンド材
１１１ ダイシングライン
１１２ 真空吸着穴
１１３ 封止樹脂注入口
１１４ ダイシングブレード
１１７ 樹脂を固定した跡
１１８ 連続した配線基板
２１９ ピンで押し上げた跡
２７０ ポット
２８０、３８０ ピン
２９０、３９０ ピン保持板 100, 200, 300 Semiconductor device 101 Wiring substrate 102, 302 Semiconductor element 103, 303a, 303b Sensor function area (light receiving function area)
104 Upper mold 105, 205, 305 Lower mold 106, 206 Resin (transparent resin)
106a Columnar structure 106b Flat plate structure 107 Sealing resin 108a Through electrode 108b External connection electrode 108c Electrode portion 109 Wire 110 Die bonding material 111 Dicing line 112 Vacuum suction hole 113 Sealing resin inlet 114 Dicing blade 117 Trace of fixing resin 118 Continuous Wiring board 219 Marks pushed up with pins 270 Pot 280, 380 Pin 290, 390 Pin holding plate

Claims (20)

配線を有する配線基板と、前記配線基板上に搭載され、表面に前記配線と電気的に接続されたセンサ機能領域を有する少なくとも１つの半導体素子と、前記少なくとも１つの半導体素子上に設けられ、前記センサ機能領域を覆う第１樹脂層と、前記少なくとも１つの半導体素子を封止する第２樹脂層とを備える半導体装置の製造方法であって、
表面に前記少なくとも１つの半導体素子が搭載された前記配線基板の裏面が第１の金型に接するように、前記第１の金型に前記配線基板を保持させる基板保持工程と、
前記第１樹脂層の材料である第１樹脂材料であって、少なくとも一部が柱状に成形された前記第１樹脂材料を第２の金型に保持させる第１樹脂保持工程と、
前記基板保持工程及び前記第１樹脂保持工程の後、前記第１の金型と前記第２の金型とを、前記センサ機能領域と前記柱状に成形された前記第１樹脂材料とが当接するようにクランプすることにより前記第１樹脂層を形成する工程と、
前記第１樹脂層を形成する工程の後、前記第１の金型と前記第２の金型との隙間に前記第２樹脂層の材料である第２樹脂材料を充填することにより前記第２樹脂層を形成する工程とを含む
半導体装置の製造方法。 A wiring board having wiring; at least one semiconductor element mounted on the wiring board and having a sensor functional region electrically connected to the wiring on a surface; and provided on the at least one semiconductor element, A method for manufacturing a semiconductor device, comprising: a first resin layer that covers a sensor functional region; and a second resin layer that seals the at least one semiconductor element,
A substrate holding step of holding the wiring board on the first mold such that a back surface of the wiring board on which the at least one semiconductor element is mounted is in contact with the first mold;
A first resin holding step of holding the first resin material, which is a material of the first resin layer, in the second mold, the first resin material at least partially molded into a column shape;
After the substrate holding step and the first resin holding step, the sensor function region and the first resin material molded into the columnar shape contact the first die and the second die. Forming the first resin layer by clamping as follows:
After the step of forming the first resin layer, the second resin material, which is the material of the second resin layer, is filled in the gap between the first mold and the second mold by the second resin material. Forming a resin layer. A method for manufacturing a semiconductor device. 前記第１樹脂層は、側面が前記第２樹脂層で覆われ、底面が前記センサ機能領域に当接する柱状構造を有し、
前記柱状構造の底面は、当該底面に対向する前記柱状構造の天面より大きく、
前記第１樹脂層を形成する工程では、
前記センサ機能領域と前記第１樹脂材料とが当接することにより前記第１樹脂材料の前記センサ機能領域側の端部が変形されて前記第１樹脂層を形成する
請求項１記載の半導体装置の製造方法。 The first resin layer has a columnar structure in which a side surface is covered with the second resin layer and a bottom surface is in contact with the sensor function area,
The bottom surface of the columnar structure is larger than the top surface of the columnar structure facing the bottom surface,
In the step of forming the first resin layer,
2. The semiconductor device according to claim 1, wherein the sensor functional region and the first resin material are in contact with each other to deform an end of the first resin material on the sensor functional region side to form the first resin layer. Production method. さらに、前記第１樹脂保持工程の前に、前記第１樹脂材料の少なくとも一部を、一方の端面が他方の端面より小さい柱状に成形する第１樹脂材料成形工程を含み、
前記第１樹脂層を形成する工程では、前記柱状に成形された前記第１樹脂材料の前記一方の端面が前記センサ機能領域に当接される
請求項１又は２記載の半導体装置の製造方法。 Furthermore, before the first resin holding step, including a first resin material molding step of molding at least a part of the first resin material into a columnar shape in which one end surface is smaller than the other end surface,
3. The method of manufacturing a semiconductor device according to claim 1, wherein in the step of forming the first resin layer, the one end surface of the first resin material formed in the columnar shape is brought into contact with the sensor function region. 前記第１樹脂層の前記少なくとも１つの半導体素子に接する面は、前記少なくとも１つの半導体素子の表面よりも小さく、かつ、前記センサ機能領域の表面よりも大きい
請求項１〜３のいずれか１項に記載の半導体装置の製造方法。 The surface of the first resin layer in contact with the at least one semiconductor element is smaller than the surface of the at least one semiconductor element and larger than the surface of the sensor function region. The manufacturing method of the semiconductor device as described in any one of. 前記少なくとも１つの半導体素子は、複数の半導体素子を含み、
前記第１樹脂保持工程では、前記第１樹脂材料の他部は前記第２の金型上に平板状に成形して保持され、
前記第２樹脂層を形成する工程では、前記基板、前記第１樹脂材料の他部及び前記第２樹脂材料を、前記複数の半導体素子のうち１つ以上の半導体素子ごとに分割する
請求項１〜４のいずれか１項に記載の半導体装置の製造方法。 The at least one semiconductor element includes a plurality of semiconductor elements;
In the first resin holding step, the other part of the first resin material is molded and held in a flat plate shape on the second mold,
The step of forming the second resin layer divides the substrate, the other part of the first resin material, and the second resin material into one or more semiconductor elements among the plurality of semiconductor elements. The manufacturing method of the semiconductor device of any one of -4. 前記第２の金型は貫通孔を有し、
前記第１樹脂層を形成する工程では、成形された前記第１樹脂材料を、前記貫通孔を用いて真空吸着することにより前記第１樹脂材料を前記第２の金型に保持させる
請求項１〜５のいずれか１項に記載の半導体装置の製造方法。 The second mold has a through hole;
The step of forming the first resin layer holds the first resin material on the second mold by vacuum-adsorbing the molded first resin material using the through holes. The manufacturing method of the semiconductor device of any one of -5. 前記第２の金型は凹部を有し、
前記第１樹脂層を形成する工程では、成形された前記第１樹脂材料の少なくとも一部を前記凹部に入れ込むことにより前記第１樹脂材料を前記第２の金型に保持させる
請求項１〜６のいずれか１項に記載の半導体装置の製造方法。 The second mold has a recess;
The step of forming the first resin layer allows the first resin material to be held in the second mold by inserting at least a part of the molded first resin material into the recess. 7. The method for manufacturing a semiconductor device according to claim 6. 前記第２の金型は、当該第２の金型を貫通し、前記第１樹脂材料に接するピンを有し、
前記第１樹脂層を形成する工程では、前記ピンを前記第１の金型方向へ稼動することにより、前記第１樹脂材料を前記センサ機能領域に当接させる
請求項１〜７のいずれか１項に記載の半導体装置の製造方法。 The second mold has a pin that penetrates the second mold and contacts the first resin material;
8. The step of forming the first resin layer causes the first resin material to abut on the sensor function area by operating the pin in the direction of the first mold. 8. A method for manufacturing the semiconductor device according to the item. 前記第１樹脂は光を透過する
請求項１〜８のいずれか１項に記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to claim 1, wherein the first resin transmits light. 前記第１樹脂は熱硬化性樹脂である
請求項１〜９のいずれか１項に記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to claim 1, wherein the first resin is a thermosetting resin. 前記第１樹脂は粘弾性を有する
請求項１〜１０のいずれか１項に記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to claim 1, wherein the first resin has viscoelasticity. 前記センサ機能領域は光学機能領域である
請求項１〜１１のいずれか１項に記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to claim 1, wherein the sensor function area is an optical function area. 前記光学機能領域は受光機能領域である
請求項１２記載の半導体装置の製造方法。 The method of manufacturing a semiconductor device according to claim 12, wherein the optical function region is a light receiving function region. 前記光学機能領域は発光機能領域である
請求項１２記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to claim 12, wherein the optical functional region is a light emitting functional region. 前記センサ機能領域は圧力感知機能領域である
請求項１〜１１のいずれか１項に記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to claim 1, wherein the sensor function area is a pressure sensing function area. 前記センサ機能領域は磁気感知機能領域である
請求項１〜１１のいずれか１項に記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to claim 1, wherein the sensor function area is a magnetic sensing function area. 前記センサ機能領域は、複数のサブセンサ機能領域を含む
請求項１〜１６のいずれか１項に記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to claim 1, wherein the sensor function area includes a plurality of sub sensor function areas. 配線を有する配線基板と、
前記配線基板上に搭載され、表面に前記配線と電気的に接続されたセンサ機能領域を有する半導体素子と、
前記半導体素子上に形成され、前記センサ機能領域を覆う第１樹脂層と、
前記配線基板上及び前記半導体素子上に形成され、前記半導体素子を封止する第２樹脂層とを備え、
前記第１樹脂層は、側面が前記第２樹脂層で覆われ、底面が前記センサ機能領域に当接する柱状構造を有し、
前記柱状構造の底面は、当該底面に対向する前記柱状構造の天面より大きい
半導体装置。 A wiring board having wiring;
A semiconductor element mounted on the wiring board and having a sensor function region electrically connected to the wiring on the surface;
A first resin layer formed on the semiconductor element and covering the sensor functional area;
A second resin layer formed on the wiring board and on the semiconductor element and encapsulating the semiconductor element;
The first resin layer has a columnar structure in which a side surface is covered with the second resin layer and a bottom surface is in contact with the sensor function area,
The bottom surface of the columnar structure is larger than the top surface of the columnar structure facing the bottom surface. 前記第１樹脂層には、真空吸着穴によって型取られた凸状の跡がある
請求項１８記載の半導体装置。 19. The semiconductor device according to claim 18, wherein the first resin layer has a convex mark formed by a vacuum suction hole. 前記第１樹脂層には、ピンが押圧されたことによって型取られた跡がある
請求項１８又は１９記載の半導体装置。 The semiconductor device according to claim 18, wherein the first resin layer has a mark taken by pressing a pin.
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