JP4569537B2 - Manufacturing method of chip-type semiconductor laser device - Google Patents

Description

  The present invention relates to a method of manufacturing a chip type semiconductor laser device in which a semiconductor laser element mounted on a resin stem is sealed with a cap with a lens.

  The semiconductor laser device has many excellent features such as small size, high efficiency, and modulation by drive current. As its application, it is widely used as a light source for various electronic devices such as a light source for laser pointers and barcode readers, a light source for optical information processing devices such as optical disk (CD and DVD) pickups, and a light source for optical communication devices. Yes.

  As a conventional method for manufacturing a chip-type semiconductor laser device, in order to increase the manufacturing efficiency of the semiconductor laser device, efforts are being made to automate a very complicated mechanism in the process.

  FIG. 4 is a schematic diagram of a conventional semiconductor laser device. A cylindrical metal stem 21 made of an iron-based material, a semiconductor laser element 3 that emits laser light, and a monitor detection element from the semiconductor laser element 3 toward the metal stem 21. A PIN photodiode element 4 that measures emitted laser light and generates a monitor current, a metal block 6 made of copper, a silicon submount 7 that serves to fix and dissipate the semiconductor laser element 3, and first and second leads The terminal 8a, 8b, the grounding terminal 9, the glass 22 for insulatingly sealing the lead terminals 8a, 8b, the cap 13 with the lens 12, and the like.

  The semiconductor laser element 3 is mounted on the metal block 6 bonded on the metal stem 21 via the silicon submount 7. The semiconductor laser element 3 is connected to the first lead terminal 8 a by a bonding wire 10. The PIN photodiode element 4 is mounted on the metal stem 21 in front of the metal block 6 and is connected to the second lead terminal 8b by the bonding wire 10. A ground terminal 9 is connected to the bottom surface of the metal stem 21 to guide leakage current from the semiconductor laser element 3 and the PIN photodiode element 4 to the outside. A cap 13 with a lens 12 that emits laser light from the semiconductor laser element 3 is joined to the upper surface of the metal stem 21. The V-shaped groove 14 formed in the metal stem 21 serves for positioning when the semiconductor laser element 3 is mounted, and the concave groove 15 serves for positioning when mounting the semiconductor laser device. Note that a gold plating layer (not shown) is formed on the package components of the metal stem 21, the metal block 6, the lead terminals 8a and 8b, and the ground terminal 9.

  However, since the conventional configuration is a package configuration in which a lead terminal is glass-sealed on a metal stem and a gold plating layer is formed on the surface, the material cost is high. In addition, there is a problem that the manufacturing cost is high because it is not suitable for mass production such as a glass sealing step.

  Furthermore, since the lead terminal and the ground terminal protrude from the bottom surface of the metal stem, there is a problem that it is difficult to achieve chip-type and surface mounting.

  The present invention has been made to solve the above problems, and an object of the present invention is to provide a manufacturing method of a chip type semiconductor laser device that can reduce material costs and manufacturing costs and can be surface-mounted.

  In order to solve the above-mentioned conventional problems, a manufacturing method of a chip-type semiconductor laser device of the present invention is a manufacturing method of a chip-type semiconductor laser device in which a semiconductor laser element mounted on a stem is covered with a cap with a lens, and a lead terminal Forming a lead frame having a metal plate and forming a lead frame so that one end and the other end of the lead terminal connected to the semiconductor laser element are arranged in a three-dimensional manner; And placing the resin into the molding die so that one end of the lead terminal protrudes from the top surface of the resin stem and the other end of the lead terminal passes through the inside of the resin stem and the resin base. A lead comprising a resin base and a resin stem that are integrally molded so as to be exposed from the side surface, and further comprising a lead terminal, a ground terminal, and a metal plate Forming the frame to form one end and the other end of the lead terminal connected to the semiconductor laser element, the ground terminal and the metal plate to be arranged in three dimensions, and mounting the lead frame in the mold And placing the resin into the molding die so that one end of the lead terminal protrudes from the upper surface of the resin stem and the metal plate is exposed, and the other end of the lead terminal and the ground terminal are connected to the resin stem and the resin. And a molding step of integrally molding the resin base and the resin stem so as to be exposed from the side surface of the resin base through the inside of the base.

  With this configuration, since the lead terminal protrudes from the side surface of the resin base, it is easy to mount on the surface, and the lead terminal can be integrally formed on the resin base and the resin stem, thereby reducing the manufacturing cost. It is suitable for mass production.

  As described above, according to the manufacturing method of the chip type semiconductor laser device of the present invention, since the stem is made of resin, the material cost can be reduced.

  In addition, since the lead terminal is integrally formed on the resin base and the resin stem, the manufacturing cost can be reduced and it is suitable for mass production.

  Moreover, since it is a chip type in which the lead terminals protrude from the side surface of the resin base, surface mounting is also possible.

  In addition, by using a resin stem that has the same shape as a conventional metal stem, there is no need to change the mounting equipment for the semiconductor laser element and the mounting equipment for the semiconductor laser device from the conventional equipment. Can be obtained.

  Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment)
1 is a perspective view of a chip type semiconductor laser device according to an embodiment of the present invention, FIG. 2 is a top view thereof, and FIG. 3 is a bottom view thereof.

  In FIG. 1, a disk-shaped resin stem 2 is provided on a resin base 1 having a substantially rectangular shape in plan view. A wide metal plate 5 is exposed on the upper surface of the resin stem 2, and a metal block 6 made of copper is bonded thereon.

  A semiconductor laser element 3 is mounted on the side surface of the metal block 6 via a silicon submount 7, and a PIN photodiode element 4 is mounted as a monitor detection element on the metal plate 5 immediately below the semiconductor laser element 3.

  A first lead terminal 8 a protrudes from the upper surface of the resin stem 2 and is connected to the semiconductor laser element 3 by a bonding wire 10. The second lead terminal 8 b is exposed on the upper surface of the resin stem 2 and is connected to the PIN photodiode element 4 by the bonding wire 10.

  The first and second lead terminals 8 a, 8 b protrude outside from the side surface of the resin base 1 through the resin stem 2 and the inside of the resin base 1.

  The metal plate 5 exposed on the upper surface of the resin stem 2 protrudes outside as a ground terminal 9 from the side surface of the resin base 1 through the resin stem 2 and the inside of the resin base 1.

  Therefore, surface mounting is also possible by forming the lead terminals 8a and 8b and the ground terminal 9 into a desired shape such as a type called gull wing or J-bend.

  The metal plate 5 exposed on the upper surface of the resin stem 2 passes through the resin stem 2 and the resin base 1 and is exposed as a heat radiating plate 11 on the bottom surface of the resin base 1 to dissipate heat generated from the semiconductor laser element. is doing.

  In order to emit laser light from the semiconductor laser element 3, a metal cap 13 with a lens 12 is adhered to the upper surface of the resin stem 2 to seal the components attached to the upper surface of the resin stem 2.

  The resin stem 2 has V-shaped grooves 14 and 14 that serve for positioning when the semiconductor laser element 3 and the PIN photodiode element 4 are mounted, and a concave groove 15 that serves for positioning when the semiconductor laser device is mounted. Is forming.

  Next, a manufacturing method of the chip type semiconductor laser device in the embodiment of the present invention will be described. First, a lead frame (not shown) including the lead terminals 8a and 8b, the ground terminal 9, the metal plate 5, the heat radiating plate 11 and the like is formed by pressing means or etching means.

  Then, the lead terminals 8a and 8b, the ground terminal 9 and the like are formed to form a three-dimensional shape. Then, it is set in an injection mold (not shown), and the resin base 1 and the resin stem 2 are integrally molded with a thermoplastic resin to obtain a package of the semiconductor laser device.

  Thereafter, the semiconductor laser device 3 and the PIN photodiode device 4 are mounted, connected by the bonding wire 10, and the cap 13 with the lens 12 is adhered to complete the semiconductor laser device.

  The resin base 1 and the resin stem 2 may be integrally formed by transfer molding using a thermosetting resin.

  In the present embodiment, a semiconductor laser device called a 2P3L type including two elements, a semiconductor laser element 3 and a PIN photodiode element 4, two lead terminals 8a and 8b, and one ground terminal 9, is taken as an example. However, it can also be applied to the 3P4L type.

  According to such a configuration, since the resin stem 2 is used, the material cost can be reduced.

  In addition, since the lead terminals 8a and 8b are integrally formed on the resin base 1 and the resin stem 2, the manufacturing cost can be reduced, which is suitable for mass production.

  Further, since the chip terminal is formed with the lead terminals 8a and 8b protruding from the side surface of the resin base 1, surface mounting is also possible.

  Further, by using the resin stem 2 having the same shape as the conventional metal stem, it is not necessary to change the mounting facility for the semiconductor laser element 3 or the mounting facility for the semiconductor laser device from the conventional facility.

  It is useful as a method for manufacturing a semiconductor laser device, and is particularly suitable for a method for manufacturing a resin-made chip-type semiconductor laser device.

1 is a perspective view of a semiconductor laser device according to an embodiment of the present invention. The top view of the semiconductor laser apparatus by one Embodiment of this invention The bottom view of the semiconductor laser apparatus by one Embodiment of this invention A perspective view of a conventional semiconductor laser device

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Resin base 2 Resin stem 3 Semiconductor laser element 4 PIN photodiode element 5 Metal plate 6 Metal block 7 Silicon submount 8a 1st lead terminal 8b 2nd lead terminal 9 Grounding terminal 10 Bonding wire 11 Heat sink 12 Lens 13 Cap 14 V-shaped groove 15 Recessed groove 21 Metal stem 22 Glass

Claims (2)

A method of manufacturing a chip-type semiconductor laser device in which a semiconductor laser element mounted on a stem is covered with a cap with a lens, wherein the lead frame including a lead terminal and a metal plate is subjected to a forming process and connected to the semiconductor laser element. A forming step for forming one end and the other end of the lead terminal so as to be three-dimensionally arranged, a placing step for placing the lead frame in a molding die, and injecting resin into the molding die The resin base and the resin stem are arranged so that one end of the lead terminal protrudes from the upper surface of the resin stem and the other end of the lead terminal passes through the resin stem and the resin base and is exposed from the side surface of the resin base. A chip-type semiconductor laser device manufacturing method comprising: a molding step of integrally molding. A method of manufacturing a chip-type semiconductor laser device in which a semiconductor laser element mounted on a stem is covered with a cap with a lens, wherein a lead frame including a lead terminal, a ground terminal, and a metal plate is subjected to forming processing, and the semiconductor laser element A forming step for forming one end and the other end of the lead terminal to be connected and the ground terminal and the metal plate to be three-dimensionally arranged; a placing step for placing the lead frame in a molding die; and Resin is injected into the molding die, and one end of the lead terminal protrudes from the upper surface of the resin stem and the metal plate is exposed. The other end of the lead terminal and the ground terminal are connected to the resin stem and the resin. And a molding step of integrally molding the resin base and the resin stem so as to be exposed from the side surface of the resin base through the inside of the base. Method for producing-up type semiconductor laser device.

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