JPH06291215A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH06291215A JPH06291215A JP5074635A JP7463593A JPH06291215A JP H06291215 A JPH06291215 A JP H06291215A JP 5074635 A JP5074635 A JP 5074635A JP 7463593 A JP7463593 A JP 7463593A JP H06291215 A JPH06291215 A JP H06291215A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- base
- adhesive
- moisture
- visible light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ＣＣＤエリアセンサ集
積回路、ＣＣＤリニアセンサ集積回路などの中空パッケ
ージ構造を有する半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a hollow package structure such as a CCD area sensor integrated circuit and a CCD linear sensor integrated circuit.
【０００２】[0002]
【従来の技術】従来から、ＣＣＤリニアセンサ・ＣＣＤ
エリアセンサ等の半導体チップを有する中空構造のプラ
スチックモールドパッケージの半導体装置では、基台が
モールドプラスチックとされ、その基台の表面に半導体
チップが固着されている。2. Description of the Related Art Conventionally, CCD linear sensor / CCD
In a semiconductor device having a hollow plastic molded package having a semiconductor chip such as an area sensor, the base is made of molded plastic, and the semiconductor chip is fixed to the surface of the base.
【０００３】モールドプラスチックの材料としては熱硬
化性樹脂と熱可塑性樹脂があり、このうち熱可塑性樹脂
材としては具体的には、非晶質ポリオレフィン樹脂また
は耐熱性向上、機械的強度向上のためガラスビーズやガ
ラスファイバー添加の非晶質ポリオレフィン樹脂などが
用いられている。Thermoplastic resins and thermoplastic resins are used as mold plastic materials. Among them, the thermoplastic resin material is specifically an amorphous polyolefin resin or glass for improving heat resistance and mechanical strength. Amorphous polyolefin resin with beads or glass fibers added is used.
【０００４】[0004]
【発明が解決しようとする課題】このようなプラスチッ
ク材を用いて基台を作製するときの問題点は、基台と半
導体チップ（Ｓｉチップ）との接着強度の不十分性であ
る。例えば、上記非晶質ポリオレフィン樹脂は極性基が
ないので、一般に使用されているＳｉチップダイボンド
用エポキシ系Ａｇペーストや絶縁性ペーストでは十分な
接着強度を得ることができない。しかも、上記非晶質ポ
レオレフィン樹脂等は耐熱性が比較的に低いので、上記
のようなペースト材（キュアが約１５０゜Ｃで１ｈ以
上）を用いるのには難点がある。十分な接着強度が得ら
れなかった場合には、ワイヤーボンド時に半導体チップ
が動いてワイヤーボンドができなかったり、温度サイク
ルで半導体チップが剥がれる等の不具合が生ずる。A problem in manufacturing a base using such a plastic material is insufficient adhesive strength between the base and a semiconductor chip (Si chip). For example, since the above amorphous polyolefin resin has no polar group, it is not possible to obtain sufficient adhesive strength with a commonly used epoxy Ag paste for Si chip die bonding or an insulating paste. In addition, since the amorphous polyolefin resin and the like have relatively low heat resistance, it is difficult to use the above-mentioned paste material (curing at 150 ° C. for 1 hour or more). If a sufficient adhesive strength is not obtained, the semiconductor chip may move during wire bonding, wire bonding may not be performed, or the semiconductor chip may peel off in a temperature cycle.
【０００５】そこで、キュア温度の制約がなく、十分な
接着強度が得られる紫外線（以下、ＵＶという。）照射
硬化型または可視光照射硬化型接着剤で半導体チップを
基台にダイボンドすることが考えられる。Therefore, it is considered that the semiconductor chip is die-bonded to the base with an ultraviolet ray (hereinafter referred to as UV) irradiation curable or visible light irradiation curable adhesive that does not restrict the curing temperature and obtains sufficient adhesive strength. To be
【０００６】しかしながら、ＵＶや可視光を照射して
も、半導体チップからはみ出ている部分でＵＶや可視光
が照射される部分は十分に硬化するが、ＵＶや可視光が
照射されない半導体チップの裏側は充分に硬化されない
ので、十分な接着強度を得ることができないという問題
がある。However, even if UV or visible light is irradiated, the portion protruding from the semiconductor chip and irradiated with UV or visible light is sufficiently cured, but the backside of the semiconductor chip is not irradiated with UV or visible light. Since it is not sufficiently cured, there is a problem that it is not possible to obtain sufficient adhesive strength.
【０００７】また、半導体チップを基台にダイボンドす
る際や透明のプラスチックリッドをＵＶ照射硬化型また
は可視光照射硬化型接着剤で基台に固着する際に、強い
ＵＶや可視光を照射すると、半導体チップ上のカラーフ
ィルタの変色、チャージアップによるポテンシャルシフ
ト等、光学的及び電気的特性の変動が発生するという問
題があった。Further, when the semiconductor chip is die-bonded to the base or when the transparent plastic lid is fixed to the base with a UV irradiation curable or visible light irradiation curable adhesive, when strong UV or visible light is irradiated, There has been a problem that optical and electrical characteristics fluctuate, such as discoloration of a color filter on a semiconductor chip and potential shift due to charge-up.
【０００８】本発明は、このような課題を考慮してなさ
れたものであって、半導体チップを基台に十分な接着強
度で固着できるとともに、固着の際に半導体チップに機
械的及び電気的特性の変動の発生することのない半導体
装置を提供することを目的とする。The present invention has been made in view of the above problems and is capable of fixing a semiconductor chip to a base with sufficient adhesive strength, and at the time of fixing, mechanical and electrical characteristics of the semiconductor chip. It is an object of the present invention to provide a semiconductor device in which the fluctuation of
【０００９】[0009]
【課題を解決するための手段】本発明は、例えば、図１
および図２に示すように、半導体チップ１０が固着され
た基台８にリッド１８を被せた中空パッケージ構造の半
導体装置において、半導体チップ１０と基台８との固着
を吸湿硬化型接着剤１２で行うようにしたものである。
また、基台８とリッド１８とを吸湿硬化型接着剤２０で
固着してもよい。さらに、半導体チップ１０と基台８、
基台８とリッド１８をともに吸湿硬化型接着剤１２で固
着してもよい。The present invention is described in, for example, FIG.
In addition, as shown in FIG. 2, in the semiconductor device having a hollow package structure in which the lid 18 is covered on the base 8 to which the semiconductor chip 10 is fixed, the adhesion between the semiconductor chip 10 and the base 8 is fixed by the moisture absorption curing adhesive 12. It's something that you do.
Further, the base 8 and the lid 18 may be fixed to each other with a moisture-curing adhesive 20. Furthermore, the semiconductor chip 10 and the base 8,
Both the base 8 and the lid 18 may be fixed to each other with a moisture-curing adhesive 12.
【００１０】[0010]
【作用】本発明によれば、例えば、半導体チップ１０と
プラスチックモールド基台８との固着を吸湿硬化型接着
剤１２で行うようにしたので、十分な接着強度を得るこ
とができる。また、吸湿硬化型接着剤１２を使用してい
るので、強いＵＶや可視光照射を原因とするカラーフィ
ルタの変色、チャージアップによるポテンシャルシフト
その他、局部加熱による特性の変動が発生することがな
い。さらに中空内部の水分が吸湿硬化型接着剤１２に吸
われ、中空内部の気密性の保持が容易となる。According to the present invention, for example, the semiconductor chip 10 and the plastic mold base 8 are fixed to each other by the moisture-curing adhesive 12, so that sufficient adhesive strength can be obtained. Further, since the moisture-curing adhesive 12 is used, color filter discoloration due to strong UV or visible light irradiation, potential shift due to charge-up, and other characteristic changes due to local heating do not occur. Furthermore, the moisture inside the hollow is absorbed by the moisture-curable adhesive 12, and the airtightness inside the hollow is easily maintained.
【００１１】[0011]
【実施例】以下、本発明半導体装置の一実施例を固体撮
像装置に適用した場合について図面を参照して説明す
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A case where one embodiment of a semiconductor device of the present invention is applied to a solid-state image pickup device will be described below with reference to the drawings.
【００１２】図１及び図２は、一実施例の固体撮像装置
の形成過程及びその構成を示している。1 and 2 show a process of forming a solid-state image pickup device and a structure thereof according to an embodiment.
【００１３】まず、図１Ａに示すように、リードフレー
ム材１として、４２アロイ材（厚み＝約０．１５ｍｍ）
または銅材（厚み＝約０．２ｍｍ）を用意する。First, as shown in FIG. 1A, as a lead frame material 1, 42 alloy material (thickness = about 0.15 mm) is used.
Alternatively, a copper material (thickness = about 0.2 mm) is prepared.
【００１４】次に、図１Ｂに示すように、このリードフ
レーム材１にエッチング処理またはプレス処理でパター
ンニングを行い、リードフレームの形状を形成する。リ
ードフレームの形状を形成後にリードフレームの表面に
導電性ペーストを塗り、熱風乾燥炉などで、約１５０゜
Ｃ、約３０分間硬化させて導電性有機被膜３ａ（図中、
網点で示している。）が形成されたリードフレーム３を
作製する。Next, as shown in FIG. 1B, the lead frame material 1 is patterned by etching or pressing to form the shape of the lead frame. After forming the shape of the lead frame, the surface of the lead frame is coated with a conductive paste and cured in a hot air drying oven at about 150 ° C. for about 30 minutes to form the conductive organic coating 3a (in the figure,
It is indicated by halftone dots. ) Is formed on the lead frame 3.
【００１５】導電性ペーストとしては、耐熱性及び耐湿
性等の面からエポキシ樹脂にＡｇまたはＡｇとＣｕを含
有させたものが良い。なお、導電性ペーストの塗り作業
方法は、導電性ペーストの浴槽中に、被塗装体としての
リードフレーム２を浸してデッピング膜厚３〜４μｍ／
回を３回繰り返して約１０μｍ厚に被覆する作業方法を
採用すればよい。なお、導電性被膜３ａの形成は、この
ようなデッピング（浸漬）処理に限らず、スクリーン印
刷によってもよい。導電性被膜３ａを形成するのは、後
述するように、リードフレーム３のインナーリード部へ
のワイヤボンディング処理、及びアウターリード部への
半田付け処理が行えるようにするためである。The conductive paste is preferably an epoxy resin containing Ag or Ag and Cu from the viewpoint of heat resistance and moisture resistance. The method of applying the conductive paste is as follows: the lead frame 2 as the object to be coated is dipped in a bath of the conductive paste to form a depping film thickness of 3 to 4 μm /
A working method may be adopted in which the coating is repeated 3 times to coat the coating with a thickness of about 10 μm. The conductive coating 3a may be formed not only by such a dipping (immersion) process but also by screen printing. The conductive coating 3a is formed so that the wire bonding process to the inner lead part of the lead frame 3 and the soldering process to the outer lead part can be performed as described later.
【００１６】したがって、導電性被膜３ａを形成する代
わりに、リードフレーム３の全表面に半田めっきまたは
Ｓｎめっき処理を行ってインナーリード部にアルミニュ
ーム（以下、Ａｌという。）のクラッドを形成してもよ
い。または全面にＮｉ−Ｐｄめっき処理をしてもよい。Therefore, instead of forming the conductive coating 3a, the entire surface of the lead frame 3 is subjected to solder plating or Sn plating to form an aluminum (hereinafter referred to as Al) clad in the inner lead portion. Good. Alternatively, the entire surface may be plated with Ni-Pd.
【００１７】次に、図１Ｃに示すように、リードフレー
ム３を所定形状に曲げて成形した後、上金型４と下金型
５とで挟む。この状態において、矢印方向から溶融した
樹脂をキャビティ６内に図示しないプランジャで射出す
る（押し込む）。キャビティ６内に押し込まれた樹脂は
上金型４と下金型５とで冷やされて固まる。この場合、
リードフレーム３のインナーリード部７は上金型４の内
面と密着しているので、それらの接触面には樹脂が回り
こむことがない。樹脂としては、例えば、非晶質ポリオ
レフィンまたはガラスビーズ、ガラスフィラーを添加し
た非晶質ポリオレフィンの熱可塑性樹脂を使用する。Next, as shown in FIG. 1C, the lead frame 3 is bent and molded into a predetermined shape and then sandwiched between an upper mold 4 and a lower mold 5. In this state, the melted resin is injected (pushed) into the cavity 6 by a plunger (not shown) from the direction of the arrow. The resin pushed into the cavity 6 is cooled and solidified by the upper mold 4 and the lower mold 5. in this case,
Since the inner lead portion 7 of the lead frame 3 is in close contact with the inner surface of the upper die 4, the resin does not wrap around these contact surfaces. As the resin, for example, amorphous polyolefin, glass beads, or a thermoplastic resin of amorphous polyolefin to which glass filler is added is used.
【００１８】図１Ｄは、樹脂が硬化して基台８となった
後に、上金型４と下金型５とが離された、基台８とリー
ドフレーム３との一体成形基台の構成を示している。図
１Ｄから分かるように、この一体成形基台は、モールド
成形された基台８の上部にリードフレーム３のインナー
リード部７の上面が配され、リードフレーム３の中間部
が基台８中に埋め込まれ、アウターリード部９が基台８
から外側に突き出るような形状になっている。また、基
台８の上面には、半導体チップ１０が載せられる凹み部
１１が形成されている。FIG. 1D shows a structure of an integrally molded base of the base 8 and the lead frame 3 in which the upper mold 4 and the lower mold 5 are separated after the resin is cured to form the base 8. Is shown. As can be seen from FIG. 1D, in this integrally molded base, the upper surface of the inner lead portion 7 of the lead frame 3 is arranged on the upper portion of the molded base 8, and the middle portion of the lead frame 3 is located inside the base 8. Embedded, outer lead 9 is base 8
It has a shape that protrudes outward from. In addition, a recess 11 on which the semiconductor chip 10 is placed is formed on the upper surface of the base 8.
【００１９】次に、図１Ｅに示すように、半導体チップ
１０を基台８の上面凹み部１１に接着剤１２でダイボン
ドする。このダイボンドは、角錘コレット１３側に半導
体チップ１０を真空吸引（矢印Ｙ1 方向）した状態で、
接着剤１２の塗布された凹み部１１に一定時間押しつけ
る（矢印Ｙ2 方向）ことで行う。接着剤１２は、凹み部
１１に塗布しておく。接着剤１２としては、吸湿硬化型
の接着剤を使用する。吸湿硬化型の接着剤としては、シ
リル基含有特殊ポリマーの常温吸湿硬化型の接着剤また
は変性アルコキシシリコン等のシリコン系のＵＶ照射＋
吸湿硬化型の接着剤を使用することができる。２液性タ
イプの吸湿硬化型の接着剤でもよい。Next, as shown in FIG. 1E, the semiconductor chip 10 is die-bonded to the upper surface recess 11 of the base 8 with the adhesive 12. This die bond is a state in which the semiconductor chip 10 is vacuum-sucked (in the direction of arrow Y 1 ) toward the pyramid collet 13 side.
This is performed by pressing the concave portion 11 coated with the adhesive 12 for a certain period of time (direction of arrow Y 2 ). The adhesive 12 is applied to the recess 11. As the adhesive 12, a moisture absorption curing type adhesive is used. As the moisture-curing adhesive, a room temperature moisture-curing adhesive of a special polymer containing a silyl group or a silicon-based UV irradiation such as modified alkoxy silicon +
A moisture-curing type adhesive can be used. A two-liquid type moisture absorption hardening type adhesive may be used.
【００２０】なお透明の基台の場合、ＵＶまたは可視光
等の光Ｌの照射を図１Ｅに示すように裏面側から行うこ
とで、半導体チップ１０の表面には光Ｌが照射されず、
ＵＶ等の光Ｌの照射を原因とする半導体チップ１０のダ
メージが発生することがない。In the case of a transparent base, by irradiating the light L such as UV or visible light from the back surface side as shown in FIG. 1E, the front surface of the semiconductor chip 10 is not irradiated with the light L,
The semiconductor chip 10 is not damaged due to the irradiation of the light L such as UV.
【００２１】なお透明の基台で、基台８の表面側から光
Ｌを照射する場合には、図１Ｆに示すように、表面に鏡
またはＡｌ膜等の光反射膜１４が形成された作業台１５
上に基台８を配置固定し、斜め上方から光Ｌを基台８の
表面周囲側を通じて基台８に入射させ、光反射膜１４で
反射させて接着剤１２に半導体チップ１０の裏面側から
照射するようにすれば、容易に半導体チップ１０の裏面
側のみから照射することができる。このようにすれば、
半導体チップ１０に光Ｌの照射を原因とするダメージを
与えることがない。不透明基台の場合は、半導体チップ
１０を角錐コレットで押えたまま斜目方向よりＵＶ又は
可視光等の光Ｌを照射する。このとき、角錐コレット１
３で押えているので光Ｌによるダメージはない。また、
いずれの場合にも半導体チップ１０を角錐コレット１３
で押えたまま硬化させているので半導体チップ１０のあ
おりが少なく、結果として、ワイヤーボンドの際の歩留
りが向上し、かつ光学的特性が向上する。In the case of irradiating the light L from the surface side of the base 8 with a transparent base, as shown in FIG. 1F, a work in which a light reflecting film 14 such as a mirror or an Al film is formed on the surface. Stand 15
The base 8 is arranged and fixed on the base 8, and the light L is obliquely incident on the base 8 through the peripheral side of the surface of the base 8 and is reflected by the light reflection film 14 so that the adhesive 12 is applied to the adhesive 12 from the back side of the semiconductor chip 10. If the irradiation is performed, the irradiation can be easily performed only from the back surface side of the semiconductor chip 10. If you do this,
The semiconductor chip 10 is not damaged by the irradiation of the light L. In the case of an opaque base, light L such as UV or visible light is emitted from the oblique direction while the semiconductor chip 10 is held by the pyramid collet. At this time, pyramid collet 1
Since it is held down by 3, there is no damage due to light L. Also,
In either case, the semiconductor chip 10 is replaced by the pyramid collet 13
Since the semiconductor chip 10 is cured while being pressed by, the semiconductor chip 10 has less tilt, and as a result, the yield at the time of wire bonding is improved and the optical characteristics are improved.
【００２２】このようにした場合には、接着剤１２とし
て吸湿硬化併用の常温硬化型、ＵＶ照射硬化型または可
視光硬化型接着剤を使用することができる。ＵＶまたは
可視光の照射キュアは、約５００〜１０００ｍＪ／ｃｍ
2 である。このときは吸湿硬化併用のため少ない照射量
でよい。In this case, the adhesive 12 may be a room temperature curable adhesive, a UV irradiation curable adhesive, or a visible light curable adhesive that is used in combination with moisture absorption curing. UV or visible light irradiation cure is about 500-1000 mJ / cm
Is 2 . At this time, a small irradiation dose is sufficient because moisture absorption curing is also used.
【００２３】次に、図２Ａに示すように、半導体チップ
１０の表面とリードフレーム３のインナーリード部７と
を約φ２５ｍｍの金線１６でワイヤボンディングする。
ワイヤボンディングの際のコラムの温度は、８０゜Ｃ〜
１００゜Ｃである。Next, as shown in FIG. 2A, the surface of the semiconductor chip 10 and the inner lead portion 7 of the lead frame 3 are wire-bonded with a gold wire 16 having a diameter of about 25 mm.
Column temperature during wire bonding is 80 ° C ~
It is 100 ° C.
【００２４】次に、図２Ｂに示すように、凹み部１７を
有する透明のプラスチックリッド１８の周囲突起部１９
の底面と基台８とを重ねて固着する。これによって、半
導体チップ１０が、中空部内に収容されることになる。Next, as shown in FIG. 2B, a peripheral projection 19 of a transparent plastic lid 18 having a recess 17 is formed.
The bottom surface and the base 8 are overlapped and fixed. As a result, the semiconductor chip 10 is housed in the hollow portion.
【００２５】この固着処理は、プラスチックリッド１８
の材質が基台８の材質と同種の熱可塑性樹脂の場合に
は、超音波溶着法またはレーザ溶着法を採用して行うこ
とができる。プラスチックリッド１８の材質が基台８と
同じ材質または異なる材質であった場合には、吸湿硬化
併用のＵＶ照射硬化または可視光硬化型接着剤を使用し
て行うこともできる。透明の基台の場合は、ＵＶまたは
可視光等の光Ｌの照射は、図１Ｅに示すように、半導体
チップ１０の裏面から行うほうが良い。This fixing process is performed by the plastic lid 18
If the material is a thermoplastic resin of the same type as the material of the base 8, ultrasonic welding or laser welding can be used. When the material of the plastic lid 18 is the same as or different from that of the base 8, a UV irradiation curing or visible light curing adhesive which is used in combination with moisture absorption curing can also be used. In the case of a transparent base, it is better to irradiate the light L such as UV or visible light from the back surface of the semiconductor chip 10 as shown in FIG. 1E.
【００２６】なお、次に説明するように、ＵＶ照射硬化
または可視光硬化型のみの接着剤を使用して固着するよ
りも上記した吸湿硬化型併用の接着剤を使用して固着す
ることが特性的により良くなるので、この実施例では、
吸湿硬化型接着剤等の接着剤２０で固着する。As will be described below, it is characteristic that fixing is performed using the above-mentioned moisture-curing type adhesive in combination rather than fixing using only UV irradiation curing or visible light curing type adhesive. In this example,
It is fixed with an adhesive 20 such as a moisture-curing adhesive.
【００２７】すなわち、接着剤１２と接着剤２０の両方
に吸湿硬化型の接着剤を使用することで、中空内の水分
が接着剤１２と接着剤２０に吸われ、中空内部の気密性
の保持が容易である。両方を吸湿硬化型接着剤とするこ
とで、気密性は一層保持される。That is, by using a moisture-curing adhesive as both the adhesive 12 and the adhesive 20, the moisture in the hollow is absorbed by the adhesive 12 and the adhesive 20, and the airtightness inside the hollow is maintained. Is easy. Airtightness is further maintained by using both of them as moisture-curing adhesives.
【００２８】次に、図２Ｃに示すように、リードフレー
ム３のうち、アウターリード部９を基台８の側面に沿う
ように成形することで、中空プラスチックモールドパッ
ケージ構造の半導体装置を作製することができる。Next, as shown in FIG. 2C, the outer lead portion 9 of the lead frame 3 is molded along the side surface of the base 8 to manufacture a semiconductor device having a hollow plastic mold package structure. You can
【００２９】この半導体装置は、例えば、プリント配線
基板（図示していない）にアウターリード部９が半田付
け（約２４０゜Ｃ〜２６０゜Ｃ）されることで取り付け
られる。This semiconductor device is attached, for example, to the printed wiring board (not shown) by soldering the outer lead portions 9 (about 240 ° C. to 260 ° C.).
【００３０】このように上記した実施例によれば、半導
体チップ１０とプラスチックモールド基台８，２２，２
３との固着及びプラスチックモールド基台８，２２，２
３とプラスチックリッド１８との固着をそれぞれ吸湿硬
化型接着剤１２，２０で行うようにしたので、十分な接
着強度を得ることができる。また、中空部内に配置され
た半導体チップ１０の気密性も保持できる。したがっ
て、強いＵＶや可視光照射を原因とするカラーフィルタ
の変色、チャージアップによるポテンシャルシフトその
他、局部加熱による特性の変動が発生することがない。As described above, according to the above-described embodiment, the semiconductor chip 10 and the plastic mold bases 8, 22, 2 are provided.
Fixing with 3 and plastic mold bases 8, 22, 2
Since the adhesive 3 and the plastic lid 18 are fixed to each other by the moisture-curing adhesives 12 and 20, respectively, sufficient adhesive strength can be obtained. Further, the airtightness of the semiconductor chip 10 arranged in the hollow portion can be maintained. Therefore, color change of the color filter due to strong UV or visible light irradiation, potential shift due to charge-up, and variation in characteristics due to local heating do not occur.
【００３１】また、接着剤１２，２０として吸湿硬化併
用のＵＶ照射硬化型または可視光硬化型接着剤を使用し
た場合でも、透明のプラスチックモールド基台８の裏側
から半導体チップ１０の裏面側に、例えば、光反射膜１
４で反射させてＵＶまたは可視光等の光Ｌを照射するよ
うにすれば、同様に、ＵＶや可視光照射を原因とするカ
ラーフィルタの変色、チャージアップによるポテンシャ
ルシフト、その他、局部加熱による特性の変動が発生す
ることがない。また、このようにすれば、接着剤１２，
２０の全面に光Ｌが照射されることになるので、ＵＶ照
射硬化型または可視光硬化型接着剤が硬化する。そし
て、ＵＶ照射で半硬化後、吸湿して確実に硬化し中空内
部に配置された半導体チップ１０の気密性も保持でき
る。Even when a UV radiation curable adhesive or a visible light curable adhesive that is used in combination with moisture absorption curing is used as the adhesives 12 and 20, from the back side of the transparent plastic mold base 8 to the back side of the semiconductor chip 10, For example, the light reflection film 1
If the light L such as UV or visible light is reflected after being reflected by 4, the color filter is discolored due to UV or visible light irradiation, potential shift due to charge-up, and other characteristics due to local heating. Fluctuation does not occur. In addition, in this way, the adhesive 12,
Since the light L is irradiated on the entire surface of 20, the UV irradiation curable or visible light curable adhesive is cured. Then, after being semi-cured by UV irradiation, it absorbs moisture and is reliably cured, so that the airtightness of the semiconductor chip 10 arranged inside the hollow can be maintained.
【００３２】したがって、上記実施例によれば、接着強
度が十分になることから、半導体チップ１０のあおり、
そり等の機械的変形が防止され、光学的特性が向上す
る。言い換えれば、半導体チップ１０の機械的・電気的
変動が発生することがない。これは、半導体チップ１０
がＣＣＤリニアセンサ素子のように細長い形状の場合に
特に有効である。なお、半導体チップ１０を接着する際
に、角錘コレット１３または平コレットで基台８，２
２，２３の凹み部１１に半導体チップ１０を押しつけな
がら接着剤１２を硬化させているので、接着中に半導体
チップ１０に反り、あおりが発生することがない。Therefore, according to the above-mentioned embodiment, since the adhesive strength becomes sufficient, the tilting of the semiconductor chip 10,
Mechanical deformation such as warpage is prevented, and optical characteristics are improved. In other words, mechanical / electrical fluctuation of the semiconductor chip 10 does not occur. This is the semiconductor chip 10.
Is particularly effective when it has an elongated shape such as a CCD linear sensor element. It should be noted that when the semiconductor chip 10 is bonded, the bases 8 and 2 are attached using the pyramid collet 13 or the flat collet.
Since the adhesive 12 is hardened while the semiconductor chip 10 is pressed against the recessed portions 11 of Nos. 2 and 23, the semiconductor chip 10 does not warp or tilt during the bonding.
【００３３】なお、本発明は、熱可塑性樹脂の基台と、
プラスチック（ガラス）リッドおよび（または）半導体
チップとの固着に限らず、熱硬化性樹脂の基台と半導体
チップとの固着、セラミック基台と半導体チップの固
着、熱硬化性樹脂の基台とプラスチックリッドまたはガ
ラスリッドの固着、セラミック基台とプラスチックリッ
ドまたはガラスリッドの固着等、種々の種類の中空パッ
ケージ構造の半導体装置にも適用できる。The present invention includes a base of thermoplastic resin,
Not only fixing to plastic (glass) lid and / or semiconductor chip, but also fixing base of thermosetting resin and semiconductor chip, fixing ceramic base and semiconductor chip, base of thermosetting resin and plastic It can also be applied to various types of semiconductor devices having a hollow package structure, such as fixing a lid or a glass lid, fixing a ceramic base and a plastic lid or a glass lid, and the like.
【００３４】また、本発明は上記の実施例に限らず、例
えば、半導体チップ１０をＣＣＤエリアセンサ等の固体
撮像素子に代替してＵＶ消去型のＥＰＲＯＭに適用する
等、本発明の要旨を逸脱することなく種々の構成を採り
得ることはもちろんである。Further, the present invention is not limited to the above-mentioned embodiment, and for example, the semiconductor chip 10 is replaced with a solid-state image pickup device such as a CCD area sensor and is applied to a UV erasing type EPROM. It goes without saying that various configurations can be adopted without doing so.
【００３５】[0035]
【発明の効果】以上説明したように、本発明によれば、
半導体チップとプラスチックモールド基台との固着を吸
湿硬化型接着剤で行うようにしたので、十分な接着強度
を得ることができる。このため、半導体チップのあおり
や反り、ハガレが発生することがない。吸湿硬化併用の
ＵＶ照射硬化型または可視光硬化型接着剤では強いＵＶ
や可視光照射を原因とするカラーフィルタの変色、チャ
ージアップによるポテンシャルシフトその他、局部加熱
による特性の変動が発生することがない。また、中空内
の水分が吸湿硬化型接着剤に吸われるので中空内部の気
密性の保持が容易である。As described above, according to the present invention,
Since the semiconductor chip and the plastic mold base are fixed to each other with the moisture-curing adhesive, sufficient adhesive strength can be obtained. Therefore, the semiconductor chip does not tilt, warp, or peel off. Strong UV for UV irradiation curable or visible light curable adhesive that is used in combination with moisture absorption curing
Also, there will be no color change of the color filter due to the irradiation of visible light, potential shift due to charge-up, and variation of characteristics due to local heating. Further, since the moisture inside the hollow is absorbed by the moisture-curing adhesive, it is easy to maintain the airtightness inside the hollow.
【図１】本発明半導体装置を固体撮像装置に適用した場
合の一実施例の構成とその形成過程を示す工程（１／
２）図である。FIG. 1 is a step (1/1) showing a configuration and a forming process of an embodiment when a semiconductor device of the present invention is applied to a solid-state imaging device.
2) It is a figure.
【図２】その工程（２／２）図である。FIG. 2 is a process (2/2) diagram thereof.
【図３】図１（図２）例の半導体装置の変形例の構成等
を示す線図である。FIG. 3 is a diagram showing a configuration and the like of a modified example of the semiconductor device shown in FIG. 1 (FIG. 2).
【図４】図１（図２）例の半導体装置の他の変形例の構
成等を示す線図である。FIG. 4 is a diagram showing a configuration and the like of another modification of the semiconductor device of the example of FIG. 1 (FIG. 2).
３ リードフレーム ８ 基台 １０ 半導体チップ １２，２０ 接着剤 １８ プラスチックリッド Ｌ 光 3 Lead frame 8 Base 10 Semiconductor chip 12,20 Adhesive 18 Plastic lid L Optical
Claims (2)
を被せた中空パッケージ構造の半導体装置において、 上記基台と、上記半導体チップおよび（または）上記リ
ッドとの固着を吸湿硬化型接着剤で行なうようにしたこ
とを特徴とする半導体装置。1. A semiconductor device having a hollow package structure in which a lid is covered on a base to which a semiconductor chip is fixed, wherein the base is fixed to the semiconductor chip and / or the lid with a moisture-absorption curable adhesive. A semiconductor device characterized by being performed.
外線照射硬化型または可視光照射硬化型兼用の接着剤で
あることを特徴とする請求項１記載の半導体装置。2. The semiconductor device according to claim 1, wherein the moisture-curable adhesive is a room-temperature curable adhesive, an ultraviolet irradiation curable adhesive, or a visible light irradiation curable adhesive.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07463593A JP3216314B2 (en) | 1993-03-31 | 1993-03-31 | Semiconductor device, method of manufacturing the same, and semiconductor device manufacturing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07463593A JP3216314B2 (en) | 1993-03-31 | 1993-03-31 | Semiconductor device, method of manufacturing the same, and semiconductor device manufacturing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06291215A true JPH06291215A (en) | 1994-10-18 |
| JP3216314B2 JP3216314B2 (en) | 2001-10-09 |
Family
ID=13552869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP07463593A Expired - Fee Related JP3216314B2 (en) | 1993-03-31 | 1993-03-31 | Semiconductor device, method of manufacturing the same, and semiconductor device manufacturing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3216314B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005236146A (en) * | 2004-02-20 | 2005-09-02 | Hamamatsu Photonics Kk | Optical semiconductor device, and manufacturing method thereof |
| JP2006310889A (en) * | 2006-08-01 | 2006-11-09 | Matsushita Electric Ind Co Ltd | Method of manufacturing chip-type semiconductor laser device |
| JP2007058240A (en) * | 2006-11-10 | 2007-03-08 | Hitachi Ltd | Prism, method of manufacturing prism, optical unit and projection type display device |
| JP2008091399A (en) * | 2006-09-29 | 2008-04-17 | Sumitomo Bakelite Co Ltd | Method of manufacturing light receiving device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63248821A (en) * | 1987-04-02 | 1988-10-17 | Shin Etsu Chem Co Ltd | Epoxy resin composition for sealing semiconductor device |
| JPH0485859A (en) * | 1990-07-26 | 1992-03-18 | Mitsui Petrochem Ind Ltd | Airtightly sealed package and bonding member |
-
1993
- 1993-03-31 JP JP07463593A patent/JP3216314B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63248821A (en) * | 1987-04-02 | 1988-10-17 | Shin Etsu Chem Co Ltd | Epoxy resin composition for sealing semiconductor device |
| JPH0485859A (en) * | 1990-07-26 | 1992-03-18 | Mitsui Petrochem Ind Ltd | Airtightly sealed package and bonding member |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005236146A (en) * | 2004-02-20 | 2005-09-02 | Hamamatsu Photonics Kk | Optical semiconductor device, and manufacturing method thereof |
| JP2006310889A (en) * | 2006-08-01 | 2006-11-09 | Matsushita Electric Ind Co Ltd | Method of manufacturing chip-type semiconductor laser device |
| JP4569537B2 (en) * | 2006-08-01 | 2010-10-27 | パナソニック株式会社 | Manufacturing method of chip-type semiconductor laser device |
| JP2008091399A (en) * | 2006-09-29 | 2008-04-17 | Sumitomo Bakelite Co Ltd | Method of manufacturing light receiving device |
| JP2007058240A (en) * | 2006-11-10 | 2007-03-08 | Hitachi Ltd | Prism, method of manufacturing prism, optical unit and projection type display device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3216314B2 (en) | 2001-10-09 |
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