WO2022097425A1 - Electronic device package and method for manufacturing same - Google Patents

Electronic device package and method for manufacturing same Download PDF

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Publication number
WO2022097425A1
WO2022097425A1 PCT/JP2021/037468 JP2021037468W WO2022097425A1 WO 2022097425 A1 WO2022097425 A1 WO 2022097425A1 JP 2021037468 W JP2021037468 W JP 2021037468W WO 2022097425 A1 WO2022097425 A1 WO 2022097425A1
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WO
WIPO (PCT)
Prior art keywords
electronic device
layer
metal
protective layer
insulating
Prior art date
Application number
PCT/JP2021/037468
Other languages
French (fr)
Japanese (ja)
Inventor
和規 松戸
光晴 日野
健次 安東
保 奥田
Original Assignee
東洋インキＳｃホールディングス株式会社
トーヨーケム株式会社
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Application filed by 東洋インキＳｃホールディングス株式会社, トーヨーケム株式会社 filed Critical 東洋インキＳｃホールディングス株式会社
Publication of WO2022097425A1 publication Critical patent/WO2022097425A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector

Definitions

  • the present invention relates to an electronic device package and a method for manufacturing the same.
  • Patent Document 1 A method of forming an insulating layer and a conductive layer in this order on a substrate on which an IC chip is mounted to protect the chip from electromagnetic waves is known (for example, Patent Document 1).
  • Patent Document 1 since a part of the insulating layer is removed on the IC chip, desmear or the like may occur, and the conductive layer is formed at the portion where the opening of the insulating layer is provided on the IC chip. There was a risk of disconnection.
  • Patent Document 1 US Pat. No. 7,445,968
  • an insulating sheet having an opening is arranged on a mounting substrate in which a conductive circuit is provided on the surface and an electronic device is mounted so that the opening is located at least on the top surface of the electronic device.
  • the present invention provides a method for manufacturing an electronic device package including a step of forming an insulating protective layer.
  • the step of forming the insulating protective layer may include hot pressing the mounting substrate after placing the insulating sheet.
  • the insulating sheet may contain an uncured or semi-cured thermosetting resin.
  • the step of forming the insulating protective layer may include curing the uncured or semi-cured thermosetting resin by hot pressing.
  • the insulating sheet may have an insulating layer and a first release sheet.
  • the manufacturing method may further include a step of removing the first release sheet from the insulating sheet after hot pressing.
  • the manufacturing method may further include the step of forming a metal-containing layer in the insulation protective layer and the opening of the electronic device.
  • the metal material layer side of the metal-containing sheet in which the metal material layer is formed on the second release sheet is used as the opening of the insulating protective layer and the electronic device. It may include all or part of the arrangement, the hot pressing of the metal-containing sheet to form the metal-containing layer, and the removal of the second release sheet.
  • the metal material layer may contain an uncured or semi-cured thermosetting resin and a conductive filler.
  • a metal-containing layer may be formed by curing an uncured or semi-cured thermosetting resin of a metal material layer with a hot press.
  • the step of forming the metal-containing layer in the insulation protective layer and the opening of the electronic device may be performed by depositing metal in the insulation protection layer and the opening of the electronic device by plating or vapor deposition, sputtering, or conductive paste.
  • a circuit board having a conductive circuit on its surface, an electronic device arranged on the circuit board, and an insulating protective layer provided on the circuit board and the electronic device are provided.
  • the insulation protective layer is provided with an opening at least in a part of the top surface of the electronic device, and the thickness of the insulation protection layer on the side surface of the electronic device and the corner portion with the top surface of the electronic device is the thickness of the side surface of the electronic device and the circuit board.
  • an electronic device package which is 0.1 to 50% of the thickness of the insulating protective layer on the recess formed by the above.
  • the insulating protective layer may be a cured product of a thermosetting resin.
  • the insulating protective layer may be provided with an opening in a part of the top surface and the side surface of the electronic device.
  • a metal-containing layer may be formed on the insulating protective layer and the opening.
  • the metal-containing layer may be a resin layer in which a conductive filler is dispersed or a thin metal layer.
  • An example of the mounting board 12 on which the insulating protective layer 30 is formed is shown.
  • An example of the metal-containing sheet 46 is shown.
  • An example of S300 using the metal-containing sheet 46 is shown.
  • An example of the manufacturing process of the electronic device package 100 using the laminated body 50 is shown.
  • a conductive circuit (not shown) is provided on the surface of the circuit board 10, and an electronic device 20 or the like is mounted on the circuit board 10.
  • the circuit board 10 may be a printed wiring board, a mounting module board, or the like.
  • the conductive circuit may be a circuit formed of a conductive metal such as copper or a material containing the conductive metal.
  • the circuit board 10 may be a rigid board or a flexible board.
  • the circuit board 10 may be processed as necessary.
  • the circuit board 10 may be provided with printing, marking, dicing grooves, and the like.
  • the electronic device 20 and the like are arranged on the circuit board 10 and exhibit various functions.
  • the electronic device 20 and the like may be, for example, an integrated circuit such as a memory chip, a power supply chip, a sound source chip or a CPU chip, an active element such as a transistor or a diode, or a passive element such as a capacitor, a thermista, an inductor or a resistor.
  • the electronic device 20 is an IC chip having a solder ball on the lower surface, and the electronic device 22 is a passive element.
  • the electronic device 20 and the like may be connected to the conductive circuit of the circuit board 10.
  • the electronic device 20 may be connected to the circuit board 10 by wire bonding or the like instead of the solder balls.
  • the electronic device 20 and the like may be arranged singularly or plurally on the circuit board 10.
  • the electronic device 20 and the like may be formed on an array of n ⁇ m on the circuit board 10 (n and m are integers of 2 or more).
  • the thickness of the electronic device 20 or the like is 2000 ⁇ m or less. This is because if it exceeds 2000 ⁇ m, there is a risk of tearing at the step between the insulating protective layer 30 and the metal-containing layer 40 and the circuit board 10. Further, it is desirable that the distance between the electronic devices 20 is 50 ⁇ m or more. This is because if the interval is less than 50 ⁇ m, the insulating protective layer 30 and the metal-containing layer 40 may not be sufficiently formed.
  • the insulation protective layer 30 is provided on the circuit board 10 and the electronic device 20 and the like, and insulates and protects the circuit board 10 and the electronic device 20 and the like from the metal-containing layer 40.
  • the insulating protective layer 30 may cover the electronic device 20 and the like and the region of the circuit board 10 where the electronic device 20 and the like are not provided.
  • the insulating protective layer 30 does not have to cover at least a part of the area of the electronic device 20 or the like.
  • the insulating protective layer 30 is provided with an opening 32 at least in a part of the top surface (upper surface in FIG. 1) of the electronic device 20, and the insulating protective layer 30 is provided in the opening 32 portion. It does not cover the electronic device 20.
  • the metal-containing layer 40 can be in direct contact with the electronic device 20, so that the heat generated by the electronic device 20 can be efficiently dissipated.
  • the openings 32 may be provided in all of the electronic devices 20 and the like on the circuit board 10, but the openings 32 may not be provided in some of them.
  • the electronic device 22 is not provided with an opening 32.
  • the electronic device 20 or the like having a circuit, terminals, or the like on the upper surface does not need to be provided with the opening 32 in order to prevent a short circuit with the metal-containing layer 40.
  • the opening 32 has a reverse taper shape. That is, the width or area of the opening 32 on the surface facing the circuit board 10 (that is, the lower surface of FIG. 1) may be smaller than the width or area of the opposite surface (that is, the upper surface of FIG. 1).
  • the insulating protective layer 30 has a forward taper shape. If the cross-sectional view of the opening 32 is neither rectangular nor forward-tapered, it may be determined to be a reverse-tapered shape. If the angle with respect to the normal of the main surface of the device 20 or the like is larger than 20 degrees, the shape may be a reverse taper shape. Since the opening 32 has a reverse taper shape, the metal-containing layer 40 is less likely to be torn due to the step between the electronic device 20 and the like and the insulating protective layer 30.
  • the metal-containing layer 40 is surely prevented from coming into contact with the circuit on the circuit board 10 and short-circuiting, and the metal-containing layer 40 is formed at a corner portion of the electronic device 20 or the like. Can be prevented from tearing.
  • the above effect can be obtained if the thickness of the insulating protective layer 30 at the corners of at least one electronic device 20 or the like is 1 to 30% of the thickness of the insulating protective layer 30 on the recess. It can be obtained at least partially.
  • FIG. 2 is an enlarged view of the dotted line A portion of FIG. 1 (however, the metal-containing layer 40 is not shown).
  • the thickness of the insulating protective layer 30 on the corner portion between the side surface of the electronic device 22 and the top surface of the electronic device 22 is shown as D1. Such corners are also called “outer corners”.
  • the thickness D1 is the thickness of the insulating protective layer 30 in the portion closest to the thin film thickness measured from the apex of the corner of the electronic device 22.
  • the thickness of the insulating protective layer 30 on the side surface of the electronic device 20 or the like may be in the range of 3 to 200 ⁇ m.
  • the thickness of the insulating protective layer 30 on the top surface of the electronic device 20 or the like may be in the range of 10 to 500 ⁇ m, preferably 10 to 200 ⁇ m.
  • FIG. 3 is an enlarged view of the dotted line B portion of FIG. 1 (however, the metal-containing layer 40 is not shown).
  • the thickness of the insulating protective layer 30 on the side surface of the electronic device 20 or the like and the recess formed by the circuit board 10 is shown as D2.
  • Such a recess is also called an "inner corner”.
  • the thickness D2 is the thickness of the insulating protective layer 30 having the thinnest film thickness as measured from the corners of the recess formed by the circuit board 10 and the electronic device 22.
  • the angle formed by the line segment defining the thickness D2 (the line segment from the corner of the recess to the portion having a thin film thickness) and the main surface of the circuit board 10 may be in the range of 20 to 70 degrees.
  • the chip body may be separated from the circuit board 10 by a solder ball or the like like the electronic device 20.
  • the portion where the line (plane) extending from the side surface of the electronic device 20 toward the circuit board 10 and the circuit board 10 intersects is "a recess formed by the circuit board 10 and the electronic device 22".
  • the thickness of the insulating protective layer 30 on the circuit board 10 may be in the range of 40 to 1000 ⁇ m, preferably 50 to 500 ⁇ m.
  • the thickness D1 and the thickness D2 and the like may be measured by cutting the electronic device package 100 and observing its cross section with a microscope or the like.
  • At least a part of the insulating protective layer 30 may enter the space between the circuit board 10 and the electronic device 20 and the like.
  • the electronic device 20 is mounted on the circuit board 10 by solder balls, and the solder balls form a space between the circuit board 10 and the electronic device 20.
  • the insulating protective layer 30 may enter at least a part of such a space. Since the insulation protective layer 30 has these dimensions, it is possible to enhance the insulation protection while ensuring the heat dissipation of the electronic device 20 and the like.
  • the insulating protective layer 30 may be a cured product of a thermosetting resin or the like. The material of the insulating protective layer 30 and the like will be described later.
  • the metal-containing layer 40 is provided on the insulating protective layer and the opening to protect the electronic device 20 and the like from external electromagnetic waves and / or dissipate the heat generated from the electronic device 20 and the like to the outside.
  • the metal-containing layer 40 may be a metal thin film formed of the metal itself or a resin layer in which a conductive filler is dispersed. Details of the material of the metal-containing layer 40 and the like will be described later.
  • the metal thin film and the conductive filler used for the metal-containing layer 40 are preferably those having good conductivity and / or heat conductivity, and for example, the volume resistivity is 10 -3 ⁇ ⁇ cm or less and / or the thermal conductivity is 10 W /. It may be m ⁇ K or more. In the electronic device package 100, the metal-containing layer 40 may be omitted.
  • the metal-containing layer 40 may be connected to a ground pattern exposed on the side surface or the upper surface of the circuit board 10 and / or a ground pattern of the electronic device 20.
  • the metal-containing layer 40 can protect the electronic device 20 and the like from electromagnetic waves, and at the same time, dissipate the heat generated by the electronic device 20 and the like.
  • the metal-containing layer 40 since the opening 32 of the insulating protective layer 30 has a reverse taper shape, the metal-containing layer 40 is less likely to be torn, and the strength of the metal-containing layer 40 can be maintained.
  • the thickness of the insulating protective layer 30 at the corner of the electronic device 20 or the like is considerably thinner than the thickness of the insulating protective layer 30 at the bottom, that is, the corner of the side surface of the electronic device 20 or the like and the circuit board 10, the electronic device 20 or the like. In addition to achieving a low profile, the mutual contact between the circuit board 10, the insulating protective layer 30, and the metal-containing layer 40 can be kept stronger.
  • FIG. 4A shows the electronic device package 100 in the modified example of this embodiment.
  • the insulating protective layer 30 is provided with not only the opening 32a on the top surface of the electronic device 20 or the like but also the opening 32b on a part of the side surface.
  • the opening 32b of the insulating protective layer 30 provided in the electronic device 22 is provided so as to reach the entire top surface and a part (upper portion) of the side surface. The heat dissipation can be further improved by providing the opening 32b up to the side surface.
  • the opening 32b may cover the entire top surface of the electronic device 22 as shown in FIG. 4B, but may have a different form.
  • the opening 32b in the cross section of a specific first plane (for example, the YZ plane), the opening 32b extends over the entire top surface of the electronic device 22, and the second plane perpendicular to the first plane (for example, the XZ plane). ), The opening 32b may remain on a part of the top surface of the electronic device 22.
  • FIG. 5 shows an example of the flow of the manufacturing method of the electronic device package 100 of the present embodiment.
  • the electronic device package 100 may be manufactured by executing at least a part of S100 to S300.
  • S100 to S300 will be described in this order, but these processes may be executed in different orders and / or at least a part thereof may be executed in parallel.
  • the insulating sheet 38 for forming the insulating protective layer 30 is manufactured.
  • FIG. 6 shows an example of the insulating sheet 38.
  • the insulating sheet 38 has an insulating layer 34 and a first release sheet 36.
  • the insulating layer 34 itself may be used as the insulating sheet 38 without providing the first release sheet 36.
  • the insulating layer 34 is a layer that will later become the insulating protective layer 30.
  • the insulating layer 34 preferably contains an uncured or semi-cured thermosetting resin, and the uncured or semi-cured thermosetting resin is later completely cured.
  • the insulating layer 34 is provided with an opening 33 corresponding to a portion that will later become the opening 32 in advance.
  • the opening 33 can be formed by laser irradiation, punching, and NC drilling. Alternatively, the opening 33 may be provided by applying a pattern on the first release sheet 36 so as to leave the opening 33 when the composition for forming the insulating layer 34 is applied.
  • thermosetting resin having at least one functional group in one molecule that causes a cross-linking reaction by heating
  • a functional group for example, a hydroxyl group, a phenolic hydroxyl group, a methoxymethyl group, a carboxyl group, an amino group, an epoxy group, an oxetanyl group, an oxazoline group, an oxazine group, an aziridine group, a thiol group, an isocyanate group, a blocked isocyanate group and a blocking group.
  • a carboxyl group, a silanol group and the like may be used.
  • thermosetting resin acrylic resin, maleic acid resin, polybutadiene resin, polyester resin, polyurethane resin, urea resin, epoxy resin, oxetane resin, phenoxy resin, polyimide resin, polyamide Resin-based resin, polyamideimide-based resin, phenol-based resin, cresol-based resin, melamine-based resin, alkyd-based resin, amino-based resin, polylactic acid-based resin, oxazoline-based resin, benzoxazine-based resin, silicone-based resin, and fluorine-based resin.
  • the resins and the like may be used.
  • the insulating layer 34 may further contain a thermoplastic resin.
  • a thermoplastic resin for example, it is preferable to select one or more from polyester, acrylic resin, polyether, urethane resin, styrene elastomer, polycarbonate, butadiene rubber, polyamide, esteramide resin, polyisoprene, and cellulose.
  • the content is preferably 5 to 40% by weight in the insulating layer 34.
  • the insulating layer 34 may contain additives.
  • additives heat dissipation fillers, colorants (eg pigments or dyes), flame retardants, fillers (eg inorganic additives), lubricants, anti-blocking agents, metal deactivators, thickeners, dispersants. , Silane coupling agent, rust preventive, copper damage inhibitor, reducing agent, antioxidant, tackifier resin, plasticizer, ultraviolet absorber, defoaming agent, leveling adjuster, etc. kind may be used.
  • the first release sheet 36 is later peeled off and removed from the electronic device package 100.
  • the first release sheet 36 does not have to be provided with an opening, but an opening may be provided at a position corresponding to the opening 33.
  • the peeling resin is a resin that has the ability to follow the shape of the electronic device 20 and the like and also has the releasability. That is, the release resin is a resin that can be peeled off after the releasable cushion member is hot pressed or the like. It is desirable that the release resin has a tensile breaking strain of 50% or more at 150 ° C. Further, the release resin is preferably melted during hot pressing.
  • release resin examples include polyethylene, polypropylene, polyether sulfone, polyphenylene sulfide, polystyrene, polymethylpentene, polybutylene terephthalate, cyclic olefin polymer, and one or more selected from silicone.
  • silicone polypropylene, polymethylpentene, polybutylene terephthalate, and silicone are suitable from the viewpoint of achieving both embedding property and peelability.
  • the tensile breaking strain may be calculated by the following method.
  • the peeling substrate and the peeling resin were cut into a size of 200 mm in width ⁇ 600 mm in length to prepare a measurement sample.
  • a tensile test (test speed 50 mm / min) was carried out on the measurement sample using a small tabletop tester EZ-TEST (manufactured by Shimadzu Corporation) under the conditions of a temperature of 25 ° C. and a relative humidity of 50%.
  • the tensile breaking strain (%) was calculated from the obtained SS curve (Stress-Strain curve).
  • FIG. 7 shows an example of S200 in the flow of FIG.
  • the insulating sheet 38 is arranged so that the center of the opening 33 is located near the center of the top surface of the electronic device 20 or the like (that is, the electronic device 20) to be provided with the opening, and then the insulating property is provided.
  • the sheet 38 may be attached to the mounting board 12.
  • the insulating sheet 38 After arranging the insulating sheet 38, it may be hot-pressed on the mounting substrate 12. By hot pressing, the uncured or semi-cured thermosetting resin of the insulating layer 34 of the insulating sheet 38 can be cured. Here, when the thermosetting resin is completely cured, the insulating layer 34 of the insulating sheet 38 becomes the insulating protective layer 30. After hot pressing, the first release sheet 36 may be removed from the insulating sheet 38. If the thermosetting resin is not completely cured by the hot press, the first release sheet 36 is removed and then additional heating is performed to further cure the insulating layer 34 to form the insulating protective layer 30. You may.
  • the hot press may be performed under reduced pressure or vacuum. As a result, the degree of adhesion of the insulating layer 34 to the mounting substrate 12 can be increased.
  • the hot press may be performed at 100 to 220 ° C. (preferably 120 to 180 ° C.) under the condition of 1 to 120 minutes (preferably 1 to 60 minutes). When additional heating is performed, it may be performed under the same temperature conditions as the above heat press.
  • thermosetting resin of the insulating layer 34 melts before or during curing and drips on the top surface of the electronic device 20 or the like, and becomes a tapered shape in the portion corresponding to the opening 32. As a result, the opening 32 having a reverse taper shape can be formed.
  • FIG. 8 shows an example of the mounting substrate 12 on which the insulating protective layer 30 is formed. As described above, by curing the insulating layer 34, the insulating protective layer 30 having the opening 32 having a reverse taper shape is formed.
  • the metal-containing layer 40 is formed in the insulation protective layer 30 and the opening 32 of the electronic device 20 and the like.
  • the metal-containing layer 40 may be formed in the entire opening 32 and a part or the whole of the region where the insulating protective layer 30 is formed.
  • the metal-containing layer 40 may be formed by transferring metal from the metal-containing sheet 46 to the mounting substrate 12.
  • FIG. 9 shows an example of the metal-containing sheet 46.
  • the metal-containing sheet 46 has a metal material layer 44 formed on the second release sheet 42.
  • the same one as the first release sheet 36 may be used.
  • the metal material layer 44 may be formed of a conductive paste containing a thermosetting resin and a conductive filler.
  • the metal material layer 44 may be formed by applying a conductive paste on the second release sheet 42 and drying the solvent.
  • the thermosetting resin in the conductive paste is preferably in an uncured or semi-cured state. Examples of the coating method include a method of coating the composition of the insulating layer 34 described above and a method of screen printing.
  • the conductive filler examples include metal particles, carbon particles, conductive resin particles and the like.
  • the conductive filler may contain metal particles as an essential component, and may additionally contain one or a plurality of other components such as carbon particles.
  • the metal particles include gold, platinum, silver, copper, nickel, aluminum, iron or alloys thereof, but copper is preferable from the viewpoint of price and conductivity.
  • the metal particles may be particles having a nucleolus made of metal and a coating layer covering the nucleolus and made of a metal different from the nucleolus.
  • the metals listed above are used as the nucleolus and coating layer. Examples thereof include silver-coated copper particles having a nucleus composed of copper and a coating layer composed of silver.
  • Examples of carbon particles include those selected from one or more of acetylene black, ketjen black, furnace black, carbon nanotubes, carbon nanofibers, graphite, fullerenes, carbon nanowalls, graphene and the like.
  • Examples of the conductive resin particles include those selected from one or more of poly (3,4-ethylenedioxythiophene), polyacetylene, polythiophene and the like.
  • the average particle size of the conductive filler is preferably about 1 to 100 ⁇ m, more preferably about 3 to 75 ⁇ m, and even more preferably about 5 to 50 ⁇ m.
  • the average particle size of the conductive filler can be measured by a laser diffraction method, a scattering method, or the like, and for example, an average value of the diameters assuming a circle equal to the projected area of the filler particle aggregate is obtained as the average particle size.
  • the shape of the conductive filler may be any shape such as spherical, needle-like, scaly, flake-like, dendritic, grape-granular, fibrous, or plate-like.
  • the content of the conductive filler in the metal material layer 44 is not particularly limited, but is preferably 100 to 1500 parts by weight, more preferably 100 to 1000 parts by weight with respect to 100 parts by weight of the thermosetting resin. preferable. Thereby, necessary and sufficient conductivity can be imparted to the metal-containing layer 40 regardless of the type of the conductive particles, and the electromagnetic wave shielding effect can be sufficiently enhanced. It is also preferable because the fluidity of the composition containing the thermosetting resin and the conductive filler is increased, and the metal material layer 44 is more easily formed.
  • the metal material layer 44 may further contain a thermoplastic resin.
  • a thermoplastic resin the same one that can be used for the insulating layer 34 may be used.
  • the metal material layer 44 may contain other additives.
  • additives cross-linking agents, colorants, flame retardants, fillers, lubricants, blocking inhibitors, metal deactivating agents, thickeners, dispersants, silane coupling agents, rust inhibitors, copper damage inhibitors.
  • a reducing agent, an antioxidant, a tackifier resin, a plasticizer, an ultraviolet absorber, a defoaming agent, a leveling adjusting agent, and the like may be used.
  • cross-linking agent examples include compounds that undergo a cross-linking reaction with the functional group of the thermosetting resin.
  • a phenol-based curing agent an amine-based curing agent, an isocyanate-based curing agent, an epoxy-based curing agent, an aziridine-based curing agent, a metal chelate-based curing agent, and the like may be used as the cross-linking agent. ..
  • the colorant for example, one or more of organic pigments, carbon black, ultramarine, petals, zinc oxide, titanium oxide, graphite, dyes and the like may be used.
  • the flame retardant for example, one or more of halogen-containing flame retardants, phosphorus-containing flame retardants, nitrogen-containing flame retardants, inorganic flame retardants and the like may be used.
  • the filler for example, one or more of glass fiber, silica, talc, ceramic and the like may be used.
  • lubricant for example, one or more of fatty acid esters, hydrocarbon resins, paraffins, higher fatty acids, fatty acid amides, fatty alcohols, metal soaps, modified silicones and the like may be used.
  • the blocking inhibitor for example, one or more of calcium carbonate, silica, polymethylsilsesquiosan, aluminum silicate and the like may be used.
  • the metal material layer 44 may be a metal foil.
  • the metal foil may be a metal foil formed on the second release sheet 42 by plating or the like, which is the same metal as that exemplified for the conductive filler.
  • FIG. 10 shows an example of S300 using the metal-containing sheet 46.
  • the metal material layer 44 side of the metal-containing sheet 46 is arranged and attached to the opening 32 of the insulating protective layer 30 and the electronic device 20 and the like.
  • the metal-containing sheet 46 is hot-pressed to cure the thermosetting resin of the metal material layer 44, thereby forming the metal-containing layer 40.
  • the second release sheet 42 is removed.
  • the electronic device package 100 as shown in FIG. 1 is manufactured.
  • the hot press may be performed under reduced pressure or vacuum. This makes it possible to increase the degree of adhesion of the metal material layer 44 to the mounting substrate 12.
  • the hot press may be performed at 100 to 220 ° C. (preferably 120 to 180 ° C.) under the condition of 1 to 120 minutes (preferably 1 to 60 minutes).
  • the metal-containing layer 40 may be formed by another method without using the metal-containing sheet 46.
  • the metal-containing layer 40 may be formed by depositing a metal by plating, vapor deposition, or sputtering (hereinafter, also referred to as “plating or the like”). Examples of the metal used for plating and the like include gold, platinum, silver, copper, nickel, aluminum, iron and alloys thereof.
  • the metal-containing layer 40 is coated or spray coated with a conductive paste (eg, one that can be used for the metal material layer 44) on the insulating protective layer 30 or the insulating layer 34 (before hot pressing). , This may be cured to form.
  • a step of disassembling the electronic device package 100 may be performed.
  • the electronic device package 100 may be diced in the X direction and the Y direction at a position corresponding to the product area to obtain individual products.
  • the insulating protective layer 30 having the opening 32 is formed on the mounting substrate 12 by the process according to S100 to S300. As a result, it is no longer necessary to perform the step of forming the opening 32 on the electronic device 20 or the like, and the electronic device 20 or the like is not contaminated by desmear or the like. Further, since the insulating protective layer 30 is formed by hot pressing, the opening 32 has a reverse taper shape, and as a result, the effect of making the metal-containing layer 40 difficult to tear and maintaining the strength of the metal-containing layer 40 can be obtained. rice field.
  • FIG. 11 shows an example of a manufacturing process of the electronic device package 100 using the laminated body 50.
  • the insulating protective layer 30 and the metal-containing layer 40 are used by using the laminate 50. 40 may be formed at one time.
  • the laminate 50 includes a third release sheet 48, a metal material layer 44 provided on the third release sheet 48, and an insulating layer 34 having an opening 33 provided on the metal material layer 44.
  • the insulating layer 34 and the metal material layer 44 may be formed using the materials and methods described above.
  • As the third release sheet 48 the same ones as the first release sheet 36 and the second release sheet 42 may be used.
  • an insulating sheet 38 (having an opening 33 in the insulating layer 34) as shown in FIG. 6 and a metal-containing sheet 46 as shown in FIG. 9 are prepared, and the metal material layer 44 of the metal-containing sheet 46 is provided.
  • the laminated body 50 can be obtained by superimposing the insulating layers 34 of the insulating sheets 38 and peeling off the first release sheet 36. In this case, the second release sheet 42 becomes the third release sheet 48.
  • the laminate 50 is arranged on the mounting substrate 12 so that the opening 33 is located at least on the top surface of the electronic device 20 or the like. After that, the laminate 50 is hot-pressed on the mounting substrate 12. As a result, the insulating protective layer 30 in which the thermosetting resin of the insulating layer 34 is cured is formed on the mounting substrate 12. Further, the thermosetting resin of the insulating layer 34 melts before or during curing and drips on the top surface of the electronic device 20 or the like, and becomes a tapered shape at the portion corresponding to the opening 33. As a result, the opening 32 having a reverse taper shape can be formed.
  • thermosetting resin of the metal material layer 44 is cured, and the metal-containing layer 40 is formed. After that, the third release sheet 48 may be peeled off and removed.
  • the hot press may be performed under reduced pressure or vacuum. This makes it possible to increase the degree of adhesion of the insulating layer 34 and the metal material layer 44 to the mounting substrate 12.
  • the hot press may be performed at 100 to 220 ° C. (preferably 120 to 180 ° C.) under the condition of 1 to 120 minutes (preferably 1 to 60 minutes).
  • the insulating protective layer 30 and the metal-containing layer 40 can be attached to the electronic device 20 or the like in one transfer step. Thereby, the productivity in the manufacturing method of the electronic device package 100 can be further increased.

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  • General Physics & Mathematics (AREA)
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  • Computer Hardware Design (AREA)
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Abstract

The present invention provides a novel electronic device package and a method for manufacturing the same. Provided is a method for manufacturing the electronic device package, the method including a step for forming an insulating protective layer by disposing an opening-equipped insulating sheet on a mount substrate which is provided with a conductive circuit on a surface thereof and on which an electronic device is mounted, so that the opening is positioned at least on the top surface of the electronic device.

Description

電子デバイスパッケージ及びその製造方法Electronic device package and its manufacturing method
　本発明は、電子デバイスパッケージ及びその製造方法に関する。 The present invention relates to an electronic device package and a method for manufacturing the same.
　ＩＣチップが搭載された基板上に絶縁層及び導電層をこの順に形成し、電磁波からチップを保護する方法が知られている（例えば、特許文献１）。しかし、特許文献１の方法によるとＩＣチップ上で絶縁層の一部を除去するので、デスミア等が発生する恐れがあり、またＩＣチップ上で絶縁層の開口が設けられた部分で導電層が断絶する恐れがあった。
　［特許文献１］米国特許７，４４５，９６８公報 A method of forming an insulating layer and a conductive layer in this order on a substrate on which an IC chip is mounted to protect the chip from electromagnetic waves is known (for example, Patent Document 1). However, according to the method of Patent Document 1, since a part of the insulating layer is removed on the IC chip, desmear or the like may occur, and the conductive layer is formed at the portion where the opening of the insulating layer is provided on the IC chip. There was a risk of disconnection.
[Patent Document 1] US Pat. No. 7,445,968
（一般的開示）
　本発明の第１の態様においては、表面に導電回路が設けられ、電子デバイスが実装された実装基板に、開口を有する絶縁性シートを、開口が電子デバイスの少なくとも天面に位置するように配置して、絶縁保護層を形成する工程を含む電子デバイスパッケージの製造方法を提供する。絶縁保護層を形成する工程は、絶縁性シートを配置後に実装基板に熱プレスすることを含んでよい。絶縁性シートは、未硬化又は半硬化の熱硬化性樹脂を含んでよい。絶縁保護層を形成する工程は、熱プレスにより、未硬化又は半硬化の熱硬化性樹脂を硬化することを含んでよい。絶縁性シートは、絶縁層及び第１剥離シートを有してよい。製造方法は、熱プレスの後に、第１剥離シートを絶縁性シートから取り除く工程を更に含んでよい。製造方法は、絶縁保護層および電子デバイスの開口に、金属含有層を形成する工程をさらに含んでよい。絶縁保護層および電子デバイスの開口に、金属含有層を形成する工程は、第２剥離シート上に金属材料層を形成した金属含有シートの金属材料層側を、絶縁保護層および電子デバイスの開口に配置すること、及び、金属含有シートを熱プレスして金属含有層を形成すること、第２剥離シートを取り除くことの全部又は一部を含んでよい。金属材料層は、未硬化又は半硬化の熱硬化性樹脂及び導電フィラーを含んでよい。熱プレスで金属材料層の未硬化又は半硬化の熱硬化性樹脂を硬化させることにより、金属含有層が形成されてよい。絶縁保護層および電子デバイスの開口に、金属含有層を形成する工程は、絶縁保護層および電子デバイスの開口に、めっき又は蒸着、スパッタ、導電ペーストにより金属を堆積することにより行われてよい。 (General disclosure)
In the first aspect of the present invention, an insulating sheet having an opening is arranged on a mounting substrate in which a conductive circuit is provided on the surface and an electronic device is mounted so that the opening is located at least on the top surface of the electronic device. The present invention provides a method for manufacturing an electronic device package including a step of forming an insulating protective layer. The step of forming the insulating protective layer may include hot pressing the mounting substrate after placing the insulating sheet. The insulating sheet may contain an uncured or semi-cured thermosetting resin. The step of forming the insulating protective layer may include curing the uncured or semi-cured thermosetting resin by hot pressing. The insulating sheet may have an insulating layer and a first release sheet. The manufacturing method may further include a step of removing the first release sheet from the insulating sheet after hot pressing. The manufacturing method may further include the step of forming a metal-containing layer in the insulation protective layer and the opening of the electronic device. In the step of forming the metal-containing layer in the opening of the insulating protective layer and the electronic device, the metal material layer side of the metal-containing sheet in which the metal material layer is formed on the second release sheet is used as the opening of the insulating protective layer and the electronic device. It may include all or part of the arrangement, the hot pressing of the metal-containing sheet to form the metal-containing layer, and the removal of the second release sheet. The metal material layer may contain an uncured or semi-cured thermosetting resin and a conductive filler. A metal-containing layer may be formed by curing an uncured or semi-cured thermosetting resin of a metal material layer with a hot press. The step of forming the metal-containing layer in the insulation protective layer and the opening of the electronic device may be performed by depositing metal in the insulation protection layer and the opening of the electronic device by plating or vapor deposition, sputtering, or conductive paste.
　また、第２の態様においては、表面に導電回路が設けられた基板上に電子デバイスが実装された実装基板に、第３剥離シートと第３剥離シート上に設けられた金属材料層と金属材料層上に設けられた開口を有する絶縁層とを含む積層体を、開口が電子デバイスの少なくとも天面に位置するように配置して、実装基板上に絶縁層から形成される絶縁保護層と金属材料層から形成される金属含有層とを形成する工程を含む、電子デバイスパッケージの製造方法を提供する。絶縁層は、熱硬化性樹脂を含んでよい。金属材料層が、熱硬化性樹脂及び導電フィラーを含んでよい。金属材料層から形成される金属含有層と絶縁層から形成される絶縁保護層とを形成する工程は、積層体を実装基板に配置後に熱プレスすることを含んでよい。製造方法は、熱プレスの後に、第３剥離シートを積層体から取り除く工程を更に含んでよい。 Further, in the second aspect, the third release sheet, the metal material layer provided on the third release sheet, and the metal material are mounted on the mounting substrate on which the electronic device is mounted on the substrate provided with the conductive circuit on the surface. A laminate including an insulating layer having an opening provided on the layer is arranged so that the opening is located at least on the top surface of the electronic device, and the insulating protective layer and the metal formed from the insulating layer on the mounting substrate. Provided is a method for manufacturing an electronic device package, which comprises a step of forming a metal-containing layer formed from a material layer. The insulating layer may contain a thermosetting resin. The metal material layer may contain a thermosetting resin and a conductive filler. The step of forming the metal-containing layer formed from the metal material layer and the insulating protective layer formed from the insulating layer may include hot-pressing the laminate after placing it on the mounting substrate. The manufacturing method may further include a step of removing the third release sheet from the laminate after hot pressing.
　また、第３の態様においては、表面に導電回路が設けられた回路基板と、回路基板上に配置された電子デバイスと、回路基板及び電子デバイス上に設けられた絶縁保護層と、を備え、絶縁保護層は、少なくとも電子デバイスの天面の一部において逆テーパー形状の開口が設けられる、電子デバイスパッケージを提供する。絶縁保護層は、熱硬化性樹脂の硬化物であってよい。絶縁保護層は、電子デバイスの天面及び側面の一部において開口が設けられてよい。絶縁保護層及び開口上に、金属含有層が形成されてよい。金属含有層は、導電フィラーが分散された樹脂層、又は、金属薄層であってよい。 Further, in the third aspect, a circuit board having a conductive circuit on its surface, an electronic device arranged on the circuit board, and an insulating protective layer provided on the circuit board and the electronic device are provided. The insulating protective layer provides an electronic device package in which a reverse tapered opening is provided at least in a part of the top surface of the electronic device. The insulating protective layer may be a cured product of a thermosetting resin. The insulating protective layer may be provided with an opening in a part of the top surface and the side surface of the electronic device. A metal-containing layer may be formed on the insulating protective layer and the opening. The metal-containing layer may be a resin layer in which a conductive filler is dispersed or a thin metal layer.
　また、第４の態様においては、表面に導電回路が設けられた回路基板と、回路基板上に配置された電子デバイスと、回路基板及び電子デバイス上に設けられた絶縁保護層と、を備え、絶縁保護層は、少なくとも電子デバイスの天面の一部において開口が設けられ、電子デバイスの側面及び電子デバイスの天面との角部分上の絶縁保護層の厚みは、電子デバイスの側面及び回路基板とにより形成される凹部上の絶縁保護層の厚みの０．１～５０％である、電子デバイスパッケージを提供する。絶縁保護層は、熱硬化性樹脂の硬化物であってよい。絶縁保護層は、電子デバイスの天面及び側面の一部において開口が設けられてよい。絶縁保護層及び開口上に、金属含有層が形成されてよい。金属含有層は、導電フィラーが分散された樹脂層、又は、金属薄層であってよい。 Further, in the fourth aspect, a circuit board having a conductive circuit on its surface, an electronic device arranged on the circuit board, and an insulating protective layer provided on the circuit board and the electronic device are provided. The insulation protective layer is provided with an opening at least in a part of the top surface of the electronic device, and the thickness of the insulation protection layer on the side surface of the electronic device and the corner portion with the top surface of the electronic device is the thickness of the side surface of the electronic device and the circuit board. Provided is an electronic device package which is 0.1 to 50% of the thickness of the insulating protective layer on the recess formed by the above. The insulating protective layer may be a cured product of a thermosetting resin. The insulating protective layer may be provided with an opening in a part of the top surface and the side surface of the electronic device. A metal-containing layer may be formed on the insulating protective layer and the opening. The metal-containing layer may be a resin layer in which a conductive filler is dispersed or a thin metal layer.
　なお、上記の発明の概要は、本発明の必要な特徴のすべてを列挙したものではない。また、これらの特徴群のサブコンビネーションもまた、発明となりうる。 The outline of the above invention does not list all the necessary features of the present invention. A subcombination of these feature groups can also be an invention.
本実施形態における、電子デバイスパッケージ１００の一例を示す。An example of the electronic device package 100 in this embodiment is shown. 図１の点線Ａ部分の拡大図である（ただし金属含有層４０は不図示）。It is an enlarged view of the dotted line A portion of FIG. 1 (however, the metal-containing layer 40 is not shown). 図１の点線Ｂ部分の拡大図である（ただし金属含有層４０は不図示）。It is an enlarged view of the dotted line B portion of FIG. 1 (however, the metal-containing layer 40 is not shown). 本実施形態の変形例における、電子デバイスパッケージ１００を示す。The electronic device package 100 in the modification of this embodiment is shown. 開口３２ｂの一例を示す（ただし金属含有層４０は不図示）。An example of the opening 32b is shown (however, the metal-containing layer 40 is not shown). 開口３２ｂの別の一例を示す（ただし金属含有層４０は不図示）。Another example of the opening 32b is shown (however, the metal-containing layer 40 is not shown). 本実施形態の電子デバイスパッケージ１００の製造方法のフローの一例を示す。An example of the flow of the manufacturing method of the electronic device package 100 of this embodiment is shown. 絶縁性シート３８の一例を示す。An example of the insulating sheet 38 is shown. 図５のフローにおけるＳ２００の一例を示す。An example of S200 in the flow of FIG. 5 is shown. 絶縁保護層３０が形成された実装基板１２の一例を示す。An example of the mounting board 12 on which the insulating protective layer 30 is formed is shown. 金属含有シート４６の一例を示す。An example of the metal-containing sheet 46 is shown. 金属含有シート４６を用いたＳ３００の一例を示す。An example of S300 using the metal-containing sheet 46 is shown. 積層体５０を用いた電子デバイスパッケージ１００の製造工程の一例を示す。An example of the manufacturing process of the electronic device package 100 using the laminated body 50 is shown.
　以下、発明の実施の形態を通じて本発明を説明するが、以下の実施形態は請求の範囲に係る発明を限定するものではない。また、実施形態の中で説明されている特徴の組み合わせのすべてが発明の解決手段に必須であるとは限らない。 Hereinafter, the present invention will be described through embodiments of the invention, but the following embodiments do not limit the invention according to the claims. Also, not all combinations of features described in the embodiments are essential to the means of solving the invention.
　図１は、本実施形態における、電子デバイスパッケージ１００の一例を示す。電子デバイスパッケージ１００は、ＩＣチップ等の電子部品が実装されたパッケージであり、良好な電磁波シールド性と放熱性を有する。電子デバイスパッケージ１００は、回路基板１０と、電子デバイス２０及び電子デバイス２２（以下、単に「電子デバイス２０等」ともいう）と、絶縁保護層３０と、金属含有層４０とを備える。 FIG. 1 shows an example of the electronic device package 100 in this embodiment. The electronic device package 100 is a package on which electronic components such as IC chips are mounted, and has good electromagnetic wave shielding properties and heat dissipation properties. The electronic device package 100 includes a circuit board 10, an electronic device 20, an electronic device 22 (hereinafter, also simply referred to as “electronic device 20 and the like”), an insulating protective layer 30, and a metal-containing layer 40.
　回路基板１０は、表面に導電回路（不図示）が設けられ、電子デバイス２０等を搭載する。回路基板１０は、プリント配線基板又は実装モジュール基板等であってよい。導電回路は、銅等の導電金属又は導電金属を含む材料により形成された回路であってよい。回路基板１０は、リジッド基板又はフレキシブル基板であってよい。 A conductive circuit (not shown) is provided on the surface of the circuit board 10, and an electronic device 20 or the like is mounted on the circuit board 10. The circuit board 10 may be a printed wiring board, a mounting module board, or the like. The conductive circuit may be a circuit formed of a conductive metal such as copper or a material containing the conductive metal. The circuit board 10 may be a rigid board or a flexible board.
　回路基板１０には、必要に応じて加工がなされていてもよい。例えば、回路基板１０には、印字、マーキング、及び、ダイシング溝等が設けられていてもよい。 The circuit board 10 may be processed as necessary. For example, the circuit board 10 may be provided with printing, marking, dicing grooves, and the like.
　電子デバイス２０等は、回路基板１０上に配置され、種々の機能を発揮する。電子デバイス２０等は、例えば、メモリチップ、電源チップ、音源チップ又はＣＰＵチップ等の集積回路、トランジスタ又はダイオード等の能動素子、若しくは、キャパシタ、サーミスタ、インダクタ又は抵抗等の受動素子であってよい。図１の例では、電子デバイス２０は下面ではんだボールを有するＩＣチップであり、電子デバイス２２は受動素子である。電子デバイス２０等は、回路基板１０の導電回路と接続されてよい。電子デバイス２０は半田ボールに代えて、ワイヤボンディング等により回路基板１０と接続されてもよい。 The electronic device 20 and the like are arranged on the circuit board 10 and exhibit various functions. The electronic device 20 and the like may be, for example, an integrated circuit such as a memory chip, a power supply chip, a sound source chip or a CPU chip, an active element such as a transistor or a diode, or a passive element such as a capacitor, a thermista, an inductor or a resistor. In the example of FIG. 1, the electronic device 20 is an IC chip having a solder ball on the lower surface, and the electronic device 22 is a passive element. The electronic device 20 and the like may be connected to the conductive circuit of the circuit board 10. The electronic device 20 may be connected to the circuit board 10 by wire bonding or the like instead of the solder balls.
　電子デバイス２０等は、回路基板１０上に単数又は複数配置されてよい。例えば、電子デバイス２０等は、回路基板１０上にｎ×ｍ個のアレイ上に形成されてよい（ｎ及びｍは２以上の整数）。 The electronic device 20 and the like may be arranged singularly or plurally on the circuit board 10. For example, the electronic device 20 and the like may be formed on an array of n × m on the circuit board 10 (n and m are integers of 2 or more).
　電子デバイス２０等の厚さは２０００μｍ以下であることが望ましい。２０００μｍを超えると絶縁保護層３０及び金属含有層４０を形成する際に回路基板１０との段差で、千切れが生じる恐れがあるためである。また、電子デバイス２０同士の間隔は５０μｍ以上であることが望ましい。間隔が５０μｍ未満となると絶縁保護層３０及び金属含有層４０が十分に形成されない恐れがあるためである。 It is desirable that the thickness of the electronic device 20 or the like is 2000 μm or less. This is because if it exceeds 2000 μm, there is a risk of tearing at the step between the insulating protective layer 30 and the metal-containing layer 40 and the circuit board 10. Further, it is desirable that the distance between the electronic devices 20 is 50 μm or more. This is because if the interval is less than 50 μm, the insulating protective layer 30 and the metal-containing layer 40 may not be sufficiently formed.
　絶縁保護層３０は、回路基板１０及び電子デバイス２０等上に設けられ、金属含有層４０から回路基板１０及び電子デバイス２０等を絶縁保護する。例えば、絶縁保護層３０は、電子デバイス２０等と、回路基板１０のうち電子デバイス２０等が設けられていない領域上を覆ってよい。 The insulation protective layer 30 is provided on the circuit board 10 and the electronic device 20 and the like, and insulates and protects the circuit board 10 and the electronic device 20 and the like from the metal-containing layer 40. For example, the insulating protective layer 30 may cover the electronic device 20 and the like and the region of the circuit board 10 where the electronic device 20 and the like are not provided.
　絶縁保護層３０は、電子デバイス２０等の少なくとも一部の領域を覆わなくてよい。例えば、図１に示すように、絶縁保護層３０には、少なくとも電子デバイス２０の天面（図１で上側の面）の一部において開口３２が設けられ、開口３２部分では絶縁保護層３０は電子デバイス２０を覆っていない。開口３２を有することにより、金属含有層４０が電子デバイス２０に直接接することができるので、電子デバイス２０で生じた熱を効率よく放熱することができる。 The insulating protective layer 30 does not have to cover at least a part of the area of the electronic device 20 or the like. For example, as shown in FIG. 1, the insulating protective layer 30 is provided with an opening 32 at least in a part of the top surface (upper surface in FIG. 1) of the electronic device 20, and the insulating protective layer 30 is provided in the opening 32 portion. It does not cover the electronic device 20. By having the opening 32, the metal-containing layer 40 can be in direct contact with the electronic device 20, so that the heat generated by the electronic device 20 can be efficiently dissipated.
　なお、回路基板１０上の電子デバイス２０等の全てに開口３２を設けてもよいが、一部には開口３２を設けなくてもよい。例えば、図１では電子デバイス２２には開口３２が設けられていない。特に上面に回路や端子等が設けられる電子デバイス２０等に対しては、金属含有層４０との短絡を防ぐために、開口３２を設けなくてよい。 It should be noted that the openings 32 may be provided in all of the electronic devices 20 and the like on the circuit board 10, but the openings 32 may not be provided in some of them. For example, in FIG. 1, the electronic device 22 is not provided with an opening 32. In particular, the electronic device 20 or the like having a circuit, terminals, or the like on the upper surface does not need to be provided with the opening 32 in order to prevent a short circuit with the metal-containing layer 40.
　また、開口３２は逆テーパー形状であることが好ましい。すなわち、開口３２の回路基板１０との向き合った面（すなわち図１の下側の面）における幅又は面積は、反対面（すなわち図１の上側の面）における幅又は面積よりも小さくてよい。絶縁保護層３０は順テーパー形状となる。開口３２の断面図が矩形でも順テーパー形状でもなければ、逆テーパー形状と判断してよいが、これに代えて例えば、開口３２の下面から上面に達する面（図１中の線Ｌ）の電子デバイス２０等の主面の法線に対する角度が２０度よりも大きければ逆テーパー形状であるとしてよい。開口３２が逆テーパー形状を有することにより、電子デバイス２０等と絶縁保護層３０との段差により金属含有層４０が千切れにくくなる。 Further, it is preferable that the opening 32 has a reverse taper shape. That is, the width or area of the opening 32 on the surface facing the circuit board 10 (that is, the lower surface of FIG. 1) may be smaller than the width or area of the opposite surface (that is, the upper surface of FIG. 1). The insulating protective layer 30 has a forward taper shape. If the cross-sectional view of the opening 32 is neither rectangular nor forward-tapered, it may be determined to be a reverse-tapered shape. If the angle with respect to the normal of the main surface of the device 20 or the like is larger than 20 degrees, the shape may be a reverse taper shape. Since the opening 32 has a reverse taper shape, the metal-containing layer 40 is less likely to be torn due to the step between the electronic device 20 and the like and the insulating protective layer 30.
　また、絶縁保護層３０は、電子デバイス２０等の角部の厚みが底部の厚みよりも一定程度薄くてよい。例えば、電子デバイス２０等の側面及び電子デバイス２０等の天面との角部分上の絶縁保護層３０の厚みは、電子デバイス２０等の側面及び回路基板１０とにより形成される凹部上の絶縁保護層３０の厚みの０．１から５０％、好ましくは１～３０％であってよい。このような厚みとすることにより、電子デバイスパッケージ１００の低背化を達成するとともに電子デバイス２０等の回路基板１０への密着をより高めることができる。加えて絶縁保護層３０を回路基板１０に強固に密着させつつ、金属含有層４０が回路基板１０上の回路と接し短絡することを確実に防ぎ、電子デバイス２０等の角部分で金属含有層４０が千切れることを防ぐことができる。電子デバイス２０等が複数存在する場合、少なくとも１つの電子デバイス２０等の角部における絶縁保護層３０の厚みが前記凹部上の絶縁保護層３０の厚みの１～３０％とすれば、上記効果を少なくとも部分的に得ることができる。 Further, in the insulating protective layer 30, the thickness of the corner portion of the electronic device 20 or the like may be thinner than the thickness of the bottom portion to a certain extent. For example, the thickness of the insulating protective layer 30 on the corner portion between the side surface of the electronic device 20 or the like and the top surface of the electronic device 20 or the like is the insulation protection on the side surface of the electronic device 20 or the like and the recess formed by the circuit board 10. It may be 0.1 to 50%, preferably 1 to 30% of the thickness of the layer 30. With such a thickness, the height of the electronic device package 100 can be reduced and the adhesion to the circuit board 10 of the electronic device 20 or the like can be further improved. In addition, while firmly adhering the insulating protective layer 30 to the circuit board 10, the metal-containing layer 40 is surely prevented from coming into contact with the circuit on the circuit board 10 and short-circuiting, and the metal-containing layer 40 is formed at a corner portion of the electronic device 20 or the like. Can be prevented from tearing. When there are a plurality of electronic devices 20 and the like, the above effect can be obtained if the thickness of the insulating protective layer 30 at the corners of at least one electronic device 20 or the like is 1 to 30% of the thickness of the insulating protective layer 30 on the recess. It can be obtained at least partially.
　図２は図１の点線Ａ部分の拡大図である（ただし金属含有層４０は不図示）。図２において、電子デバイス２２の側面及び電子デバイス２２の天面との角部分上の絶縁保護層３０の厚みをＤ１として示す。このような角部分は「出隅」ともいう。厚さＤ１は、電子デバイス２２の角部の頂点から測定して最も近く膜厚が薄い部分の絶縁保護層３０の厚さである。なお、電子デバイス２０等の側面上の絶縁保護層３０の厚みは３～２００μｍの範囲内にあってよい。なお、絶縁保護層３０の電子デバイス２０等の天面における厚みは、１０～５００μｍ、好ましくは１０～２００μｍの範囲内にあってよい。 FIG. 2 is an enlarged view of the dotted line A portion of FIG. 1 (however, the metal-containing layer 40 is not shown). In FIG. 2, the thickness of the insulating protective layer 30 on the corner portion between the side surface of the electronic device 22 and the top surface of the electronic device 22 is shown as D1. Such corners are also called "outer corners". The thickness D1 is the thickness of the insulating protective layer 30 in the portion closest to the thin film thickness measured from the apex of the corner of the electronic device 22. The thickness of the insulating protective layer 30 on the side surface of the electronic device 20 or the like may be in the range of 3 to 200 μm. The thickness of the insulating protective layer 30 on the top surface of the electronic device 20 or the like may be in the range of 10 to 500 μm, preferably 10 to 200 μm.
　図３は図１の点線Ｂ部分の拡大図である（ただし金属含有層４０は不図示）。図３において、電子デバイス２０等の側面及び回路基板１０とにより形成される凹部上の絶縁保護層３０の厚みをＤ２として示す。このような凹部は「入隅」とも言う。厚さＤ２は、回路基板１０と電子デバイス２２とにより形成される凹部の角から測定して最も膜厚が薄い部分の絶縁保護層３０の厚さである。厚みＤ２を定義する線分（凹部の角から膜厚が薄い部分までの線分）と、回路基板１０の主面とが形成する角度は２０～７０度の範囲であってよい。なお、電子デバイス２０等は、電子デバイス２０のようにチップ本体が半田ボール等により回路基板１０と離隔していることもありえる。そのような場合には、電子デバイス２０の側面から回路基板１０に向かって延伸させた線（面）と、回路基板１０との交わる部分を「回路基板１０と電子デバイス２２とにより形成される凹部」とみなしてよい。回路基板１０上の絶縁保護層３０の厚みは４０～１０００μｍ、好ましくは５０～５００μｍの範囲内にあってよい。厚さＤ１及び厚さＤ２等は、電子デバイスパッケージ１００を切断し、その断面を顕微鏡等で観察することにより測定されてよい。 FIG. 3 is an enlarged view of the dotted line B portion of FIG. 1 (however, the metal-containing layer 40 is not shown). In FIG. 3, the thickness of the insulating protective layer 30 on the side surface of the electronic device 20 or the like and the recess formed by the circuit board 10 is shown as D2. Such a recess is also called an "inner corner". The thickness D2 is the thickness of the insulating protective layer 30 having the thinnest film thickness as measured from the corners of the recess formed by the circuit board 10 and the electronic device 22. The angle formed by the line segment defining the thickness D2 (the line segment from the corner of the recess to the portion having a thin film thickness) and the main surface of the circuit board 10 may be in the range of 20 to 70 degrees. In the electronic device 20 and the like, the chip body may be separated from the circuit board 10 by a solder ball or the like like the electronic device 20. In such a case, the portion where the line (plane) extending from the side surface of the electronic device 20 toward the circuit board 10 and the circuit board 10 intersects is "a recess formed by the circuit board 10 and the electronic device 22". Can be regarded as. The thickness of the insulating protective layer 30 on the circuit board 10 may be in the range of 40 to 1000 μm, preferably 50 to 500 μm. The thickness D1 and the thickness D2 and the like may be measured by cutting the electronic device package 100 and observing its cross section with a microscope or the like.
　絶縁保護層３０は、回路基板１０と電子デバイス２０等との間の空間に少なくとも一部が入り込んでもよい。例えば、図１で電子デバイス２０は半田ボールにより回路基板１０に実装されており、半田ボールにより回路基板１０と電子デバイス２０との間の空間が形成されている。 At least a part of the insulating protective layer 30 may enter the space between the circuit board 10 and the electronic device 20 and the like. For example, in FIG. 1, the electronic device 20 is mounted on the circuit board 10 by solder balls, and the solder balls form a space between the circuit board 10 and the electronic device 20.
　絶縁保護層３０は、このような空間の少なくとも一部に入り込んでもよい。絶縁保護層３０がこれらの寸法を有するにより、電子デバイス２０等の放熱性を確保しつつ絶縁保護性を高めることができる。 The insulating protective layer 30 may enter at least a part of such a space. Since the insulation protective layer 30 has these dimensions, it is possible to enhance the insulation protection while ensuring the heat dissipation of the electronic device 20 and the like.
　絶縁保護層３０は、熱硬化性樹脂の硬化物等であってよい。絶縁保護層３０の材料等については後述する。 The insulating protective layer 30 may be a cured product of a thermosetting resin or the like. The material of the insulating protective layer 30 and the like will be described later.
　金属含有層４０は、絶縁保護層及び開口上に設けられ、電子デバイス２０等を外部の電磁波から保護し、及び／又は、電子デバイス２０等から生じた熱を外部に放熱する。金属含有層４０は、金属自体で形成された金属薄膜、又は、導電フィラーが分散された樹脂層であってよい。金属含有層４０の材料などの詳細は後述する。 The metal-containing layer 40 is provided on the insulating protective layer and the opening to protect the electronic device 20 and the like from external electromagnetic waves and / or dissipate the heat generated from the electronic device 20 and the like to the outside. The metal-containing layer 40 may be a metal thin film formed of the metal itself or a resin layer in which a conductive filler is dispersed. Details of the material of the metal-containing layer 40 and the like will be described later.
　金属含有層４０の厚みは、導電フィラーを含む熱硬化性樹脂の場合、２～５００μｍであってよく、好ましくは５～１００μｍであってよい。一方、めっき又は蒸着、スパッタの場合、０．０１～１０μｍであってよく、好ましくは０．１～５μｍであってよい。厚みが薄すぎると電磁波遮断効果や放熱効果及び機械的強度が不十分となる恐れがあり、熱すぎると電子デバイスパッケージ１００が必要以上に大型化して嵩張るという問題が生じる。 The thickness of the metal-containing layer 40 may be 2 to 500 μm, preferably 5 to 100 μm in the case of a thermosetting resin containing a conductive filler. On the other hand, in the case of plating, vapor deposition or sputtering, it may be 0.01 to 10 μm, preferably 0.1 to 5 μm. If the thickness is too thin, the electromagnetic wave blocking effect, the heat dissipation effect, and the mechanical strength may be insufficient, and if the thickness is too hot, the electronic device package 100 becomes larger than necessary and becomes bulky.
　金属含有層４０に用いられる金属薄膜及び導電フィラーは、導電性及び／又は伝熱性が良好なものが好ましく、例えば、体積抵抗率が１０－３Ω・ｃｍ以下及び／又は熱伝導率が１０Ｗ／ｍ・Ｋ以上のものであってよい。なお、電子デバイスパッケージ１００において、金属含有層４０は省略されてもよい。 The metal thin film and the conductive filler used for the metal-containing layer 40 are preferably those having good conductivity and / or heat conductivity, and for example, the volume resistivity is 10 -3 Ω · cm or less and / or the thermal conductivity is 10 W /. It may be m · K or more. In the electronic device package 100, the metal-containing layer 40 may be omitted.
　金属含有層４０は、回路基板１０の側面又は上面に露出するグランドパターン及び／又は電子デバイス２０のグランドパターンと接続されていてもよい。 The metal-containing layer 40 may be connected to a ground pattern exposed on the side surface or the upper surface of the circuit board 10 and / or a ground pattern of the electronic device 20.
　このように本実施形態に係る電子デバイスパッケージ１００によれば、金属含有層４０が電子デバイス２０等を電磁波から保護しつつ、電子デバイス２０等が生じた熱の放熱を図ることができる。ここで、電子デバイスパッケージ１００によれば、絶縁保護層３０の開口３２が逆テーパー形状であるので金属含有層４０を千切れにくくし、金属含有層４０の強度を保つことができる。また、電子デバイス２０等の角部における絶縁保護層３０の厚みが底部、即ち電子デバイス２０等の側面と回路基板１０との角部における絶縁保護層３０の厚みよりも一定程度薄いので、電子デバイスの低背化を達成するとともに、回路基板１０、絶縁保護層３０及び金属含有層４０の相互の接触をより強固に保つことができる。 As described above, according to the electronic device package 100 according to the present embodiment, the metal-containing layer 40 can protect the electronic device 20 and the like from electromagnetic waves, and at the same time, dissipate the heat generated by the electronic device 20 and the like. Here, according to the electronic device package 100, since the opening 32 of the insulating protective layer 30 has a reverse taper shape, the metal-containing layer 40 is less likely to be torn, and the strength of the metal-containing layer 40 can be maintained. Further, since the thickness of the insulating protective layer 30 at the corner of the electronic device 20 or the like is considerably thinner than the thickness of the insulating protective layer 30 at the bottom, that is, the corner of the side surface of the electronic device 20 or the like and the circuit board 10, the electronic device 20 or the like. In addition to achieving a low profile, the mutual contact between the circuit board 10, the insulating protective layer 30, and the metal-containing layer 40 can be kept stronger.
　図４Ａは、本実施形態の変形例における、電子デバイスパッケージ１００を示す。本変形例においては、絶縁保護層３０は電子デバイス２０等の天面の開口３２ａだけではなく、側面の一部において開口３２ｂが設けられる。図示するように、電子デバイス２２に設けられた絶縁保護層３０の開口３２ｂは、天面を全体と、側面の一部（上部分）に達するように設けられている。開口３２ｂが側面まで設けられることで放熱性をより高めることができる。このような大きな開口３２ｂは、電磁波保護の必要性よりも放熱性の必要性が高い電子デバイス２０等（例えば、計算量が多く高温になりやすいＩＣチップ等）に設けられてよい。 FIG. 4A shows the electronic device package 100 in the modified example of this embodiment. In this modification, the insulating protective layer 30 is provided with not only the opening 32a on the top surface of the electronic device 20 or the like but also the opening 32b on a part of the side surface. As shown in the figure, the opening 32b of the insulating protective layer 30 provided in the electronic device 22 is provided so as to reach the entire top surface and a part (upper portion) of the side surface. The heat dissipation can be further improved by providing the opening 32b up to the side surface. Such a large opening 32b may be provided in an electronic device 20 or the like (for example, an IC chip that requires a large amount of calculation and tends to have a high temperature), which has a higher need for heat dissipation than the need for electromagnetic wave protection.
　なお、開口３２ｂは、図４Ｂに示すように電子デバイス２２の天面全体を覆ってよいが、異なった形態であってもよい。例えば、図４Ｃに示すように、特定の第１平面（例えばＹＺ平面）における断面部では開口３２ｂが電子デバイス２２の天面全体に広がりつつ、第１平面と垂直な第２平面（例えばＸＺ平面）においては開口３２ｂが電子デバイス２２の天面の一部に留まっていてもよい。これにより絶縁保護層３０の電子デバイス２０等との密着性を維持しつつ放熱性及び電磁波シールド性を高めることができる。 The opening 32b may cover the entire top surface of the electronic device 22 as shown in FIG. 4B, but may have a different form. For example, as shown in FIG. 4C, in the cross section of a specific first plane (for example, the YZ plane), the opening 32b extends over the entire top surface of the electronic device 22, and the second plane perpendicular to the first plane (for example, the XZ plane). ), The opening 32b may remain on a part of the top surface of the electronic device 22. As a result, it is possible to improve the heat dissipation property and the electromagnetic wave shielding property while maintaining the adhesion of the insulating protective layer 30 with the electronic device 20 and the like.
　図５は、本実施形態の電子デバイスパッケージ１００の製造方法のフローの一例を示す。電子デバイスパッケージ１００は、Ｓ１００～Ｓ３００の少なくとも一部を実行することにより製造されてよい。説明の便宜上Ｓ１００～Ｓ３００をこの順に説明するが、これらの処理は別の順番で実行されてよく、及び／又は、少なくとも一部が並列に実行されてもよい。 FIG. 5 shows an example of the flow of the manufacturing method of the electronic device package 100 of the present embodiment. The electronic device package 100 may be manufactured by executing at least a part of S100 to S300. For convenience of explanation, S100 to S300 will be described in this order, but these processes may be executed in different orders and / or at least a part thereof may be executed in parallel.
　Ｓ１００において、絶縁保護層３０を形成するための絶縁性シート３８を製造する。 In S100, the insulating sheet 38 for forming the insulating protective layer 30 is manufactured.
　図６は、絶縁性シート３８の一例を示す。図示するように、絶縁性シート３８は、絶縁層３４及び第１剥離シート３６を有する。これに代えて、第１剥離シート３６を設けずに絶縁層３４自体を絶縁性シート３８としてもよい。 FIG. 6 shows an example of the insulating sheet 38. As shown, the insulating sheet 38 has an insulating layer 34 and a first release sheet 36. Instead of this, the insulating layer 34 itself may be used as the insulating sheet 38 without providing the first release sheet 36.
　絶縁層３４は後に絶縁保護層３０になる層である。絶縁層３４は、未硬化又は半硬化の熱硬化性樹脂を含むことが好ましく、未硬化又は半硬化の熱硬化性樹脂は後に完全に硬化される。絶縁層３４には、後に開口３２となる部分に対応する開口３３が予め設けられている。開口３３は、レーザー照射、パンチング、ＮＣドリル加工により形成することができる。あるいは、第１剥離シート３６上に、絶縁層３４を形成するための組成物を塗工する際、開口３３を残すように、パターン塗工することによって、開口３３を設けることもできる。 The insulating layer 34 is a layer that will later become the insulating protective layer 30. The insulating layer 34 preferably contains an uncured or semi-cured thermosetting resin, and the uncured or semi-cured thermosetting resin is later completely cured. The insulating layer 34 is provided with an opening 33 corresponding to a portion that will later become the opening 32 in advance. The opening 33 can be formed by laser irradiation, punching, and NC drilling. Alternatively, the opening 33 may be provided by applying a pattern on the first release sheet 36 so as to leave the opening 33 when the composition for forming the insulating layer 34 is applied.
　絶縁層３４として、加熱により架橋反応が生じる官能基を１分子中に１つ以上有する熱硬化性樹脂を用いることができる。官能基として、例えば、水酸基、フェノール性水酸基、メトキシメチル基、カルボキシル基、アミノ基、エポキシ基、オキセタニル基、オキサゾリン基、オキサジン基、アジリジン基、チオール基、イソシアネート基、ブロック化イソシアネート基、ブロック化カルボキシル基、及び、シラノール基等のうちの１種類または複数種類を用いてよい。 As the insulating layer 34, a thermosetting resin having at least one functional group in one molecule that causes a cross-linking reaction by heating can be used. As a functional group, for example, a hydroxyl group, a phenolic hydroxyl group, a methoxymethyl group, a carboxyl group, an amino group, an epoxy group, an oxetanyl group, an oxazoline group, an oxazine group, an aziridine group, a thiol group, an isocyanate group, a blocked isocyanate group and a blocking group. One or more of a carboxyl group, a silanol group and the like may be used.
　熱硬化性樹脂の一例として、アクリル系樹脂、マレイン酸系樹脂、ポリブタジエン系樹脂、ポリエステル系樹脂、ポリウレタン系樹脂、尿素系樹脂、エポキシ系樹脂、オキセタン系樹脂、フェノキシ系樹脂、ポリイミド系樹脂、ポリアミド系樹脂、ポリアミドイミド系樹脂、フェノール系樹脂、クレゾール系樹脂、メラミン系樹脂、アルキド系樹脂、アミノ系樹脂、ポリ乳酸系樹脂、オキサゾリン系樹脂、ベンゾオキサジン系樹脂、シリコーン系樹脂、及び、フッ素系樹脂等のうちの１種類または複数種類を用いてよい。 As an example of the thermosetting resin, acrylic resin, maleic acid resin, polybutadiene resin, polyester resin, polyurethane resin, urea resin, epoxy resin, oxetane resin, phenoxy resin, polyimide resin, polyamide Resin-based resin, polyamideimide-based resin, phenol-based resin, cresol-based resin, melamine-based resin, alkyd-based resin, amino-based resin, polylactic acid-based resin, oxazoline-based resin, benzoxazine-based resin, silicone-based resin, and fluorine-based resin. One or more of the resins and the like may be used.
　絶縁層３４には、架橋剤が含まれてよい。例えば、架橋剤としてフェノール系硬化剤、アミン系硬化剤、イソシアネート系硬化剤、エポキシ系硬化剤、アジリジン系硬化剤、及び、金属キレート系硬化剤等のうちの１種類または複数種類を用いてよい。 The insulating layer 34 may contain a cross-linking agent. For example, one or more of a phenol-based curing agent, an amine-based curing agent, an isocyanate-based curing agent, an epoxy-based curing agent, an aziridine-based curing agent, a metal chelate-based curing agent, and the like may be used as the cross-linking agent. ..
　絶縁層３４は、熱可塑性樹脂を更に含んでもよい。熱可塑性樹脂として例えば、ポリエステル、アクリル系樹脂、ポリエーテル、ウレタン系樹脂、スチレンエラストマー、ポリカーボネート、ブタジエンゴム、ポリアミド、エステルアミド系樹脂、ポリイソプレン、およびセルロースから１つ以上を選択することが好ましい。熱可塑性樹脂を含む場合、絶縁層３４中において５～４０重量％の含有量とすることが好ましい。 The insulating layer 34 may further contain a thermoplastic resin. As the thermoplastic resin, for example, it is preferable to select one or more from polyester, acrylic resin, polyether, urethane resin, styrene elastomer, polycarbonate, butadiene rubber, polyamide, esteramide resin, polyisoprene, and cellulose. When the thermoplastic resin is contained, the content is preferably 5 to 40% by weight in the insulating layer 34.
　絶縁層３４には、添加剤が含まれてよい。例えば、添加剤として、放熱フィラー、着色剤（例えば顔料、又は、染料）、難燃剤、充填剤（例えば無機添加剤）、滑剤、ブロッキング防止剤、金属不活性化剤、増粘剤、分散剤、シランカップリング剤、防錆剤、銅害防止剤、還元剤、酸化防止剤、粘着付与樹脂、可塑剤、紫外線吸収剤、消泡剤、及び、レベリング調整剤等のうちの１種類または複数種類を用いてよい。 The insulating layer 34 may contain additives. For example, as additives, heat dissipation fillers, colorants (eg pigments or dyes), flame retardants, fillers (eg inorganic additives), lubricants, anti-blocking agents, metal deactivators, thickeners, dispersants. , Silane coupling agent, rust preventive, copper damage inhibitor, reducing agent, antioxidant, tackifier resin, plasticizer, ultraviolet absorber, defoaming agent, leveling adjuster, etc. Kind may be used.
　第１剥離シート３６は後に剥離されて電子デバイスパッケージ１００から除かれるものである。第１剥離シート３６には開口が設けられなくてよいが、開口３３と対応する位置に開口が設けられてもよい。 The first release sheet 36 is later peeled off and removed from the electronic device package 100. The first release sheet 36 does not have to be provided with an opening, but an opening may be provided at a position corresponding to the opening 33.
　第１剥離シート３６として、後で剥離可能なフィルム状の剥離基材、又は、クッション性を有する剥離樹脂を用いることができる。第１剥離シート３６は、剥離基材及び／又は剥離樹脂の単層又は複数層で構成されてよい。 As the first release sheet 36, a film-like release base material that can be peeled off later or a release resin having cushioning properties can be used. The first release sheet 36 may be composed of a single layer or a plurality of layers of the release base material and / or the release resin.
　剥離基材は、片面又は両面に離型性が付与されたフィルム状の基材である。剥離基材は、１５０℃における引張破断歪が５０％未満のシートであることが望ましい。剥離基材として例えば、ポリエチレンテレフタレート、ポリエチレンナフタレート、ポリフッ化ビニル、ポリフッ化ビニリデン、硬質ポリ塩化ビニル、ポリ塩化ビニリデン、ナイロン、ポリイミド、ポリスチレン、ポリビニルアルコール、エチレン・ビニルアルコール共重合体、ポリカーボネート、ポリアクリロニトリル、ポリブテン、軟質ポリ塩化ビニル、ポリフッ化ビニリデン、ポリエチレン、ポリプロピレン、ポリウレタン樹脂、エチレン酢酸ビニル共重合体、ポリ酢酸ビニル等のプラスチックシート等、グラシン紙、上質紙、クラフト紙、コート紙等の紙類、各種の不織布、合成紙、金属箔、又は、これらを組み合わせた複合フィルムのうち１又は複数種類を選択したものが挙げられる。 The peelable base material is a film-like base material having releasability on one side or both sides. The peeling substrate is preferably a sheet having a tensile fracture strain at 150 ° C. of less than 50%. As the release base material, for example, polyethylene terephthalate, polyethylene naphthalate, polyvinyl fluoride, polyvinylidene fluoride, rigid polyvinyl chloride, polyvinylidene chloride, nylon, polyimide, polystyrene, polyvinyl alcohol, ethylene / vinyl alcohol copolymer, polycarbonate, poly Acrylonitrile, polyvinyl chloride, soft polyvinyl chloride, polyvinylidene fluoride, polyethylene, polypropylene, polyurethane resin, ethylene vinyl acetate copolymer, plastic sheets such as polyvinyl acetate, glassin paper, fine paper, kraft paper, coated paper, etc. Types, various non-woven fabrics, synthetic papers, metal foils, or composite films in which these are combined may be selected from one or more types.
　剥離樹脂は、電子デバイス２０等の形状への追従性を有し、離型性も有する樹脂である。つまり、剥離樹脂は、離形性クッション部材は、熱プレス等の後に剥離可能な樹脂である。剥離樹脂は、１５０℃における引張破断歪が５０％以上であることが望ましい。また剥離樹脂は、熱プレス時に溶融することが好ましい。 The peeling resin is a resin that has the ability to follow the shape of the electronic device 20 and the like and also has the releasability. That is, the release resin is a resin that can be peeled off after the releasable cushion member is hot pressed or the like. It is desirable that the release resin has a tensile breaking strain of 50% or more at 150 ° C. Further, the release resin is preferably melted during hot pressing.
　剥離樹脂として例えば、ポリエチレン、ポリプロピレン、ポリエーテルスルフォン、ポリフェニレンスルフィド、ポリスチレン、ポリメチルペンテン、ポリブチレンテレフタレート、環状オレフィンポリマー、及び、シリコーンのうち１又は複数種類を選択したものが挙げられる。特にポリプロピレン、ポリメチルペンテン、ポリブチレンテレフタレート、シリコーンが埋め込み性と剥離性の両立の観点から好適である。 Examples of the release resin include polyethylene, polypropylene, polyether sulfone, polyphenylene sulfide, polystyrene, polymethylpentene, polybutylene terephthalate, cyclic olefin polymer, and one or more selected from silicone. In particular, polypropylene, polymethylpentene, polybutylene terephthalate, and silicone are suitable from the viewpoint of achieving both embedding property and peelability.
　なお、引張破断歪は以下の方法によって算出してよい。剥離基材および剥離樹脂を幅２００ｍｍ×長さ６００ｍｍの大きさに切断し測定試料とした。測定試料について小型卓上試験機ＥＺ－ＴＥＳＴ（島津製作所社製）を用いて、温度２５℃、相対湿度５０％の条件下で引っ張り試験（試験速度５０ｍｍ／ｍｉｎ）を実施した。得られたＳ－Ｓ曲線（Ｓｔｒｅｓｓ－Ｓｔｒａｉｎ曲線）から引張破断歪（％）を算出した。 The tensile breaking strain may be calculated by the following method. The peeling substrate and the peeling resin were cut into a size of 200 mm in width × 600 mm in length to prepare a measurement sample. A tensile test (test speed 50 mm / min) was carried out on the measurement sample using a small tabletop tester EZ-TEST (manufactured by Shimadzu Corporation) under the conditions of a temperature of 25 ° C. and a relative humidity of 50%. The tensile breaking strain (%) was calculated from the obtained SS curve (Stress-Strain curve).
　絶縁性シート３８の製造方法は、特に限定されないが、例えば、絶縁層３４を形成する上記熱硬化樹脂等の材料を溶媒等に溶解させた組成物を第１剥離シート３６に塗布するか、硬化又は半硬化させた当該組成物を第１剥離シート３６にラミネートする方法等が挙げられる。塗布方法として、例えば、グラビアコート方式、キスコート方式、ダイコート方式、リップコート方式、コンマコート方式、ブレード方式、ロールコート方式、ナイフコート方式、スプレーコート方式、バーコート方式、スピコート方式、ディップコート方式、又は、各種印刷方式等が挙げられる。 The method for producing the insulating sheet 38 is not particularly limited, but for example, a composition obtained by dissolving a material such as the thermosetting resin forming the insulating layer 34 in a solvent or the like is applied to the first release sheet 36 or cured. Alternatively, a method of laminating the semi-cured composition on the first release sheet 36 and the like can be mentioned. As the coating method, for example, gravure coat method, kiss coat method, die coat method, lip coat method, comma coat method, blade method, roll coat method, knife coat method, spray coat method, bar coat method, spico coat method, dip coat method, Alternatively, various printing methods and the like can be mentioned.
　次にＳ２００において、電子デバイス２０等の上に絶縁保護層３０を形成する。例えば、まず、実装基板１２を用意する。実装基板１２は、表面に導電回路が設けられた回路基板１０上に、電子デバイス２０等が実装されたものであってよい。実装基板１２に、Ｓ１００で製造した開口３３を有する絶縁性シート３８を、開口３３が電子デバイス２０等の少なくとも天面に位置するように配置する。 Next, in S200, the insulating protective layer 30 is formed on the electronic device 20 and the like. For example, first, the mounting board 12 is prepared. The mounting board 12 may be a circuit board 10 on which a conductive circuit is provided on the surface, on which an electronic device 20 or the like is mounted. The insulating sheet 38 having the opening 33 manufactured in S100 is arranged on the mounting substrate 12 so that the opening 33 is located at least on the top surface of the electronic device 20 or the like.
　図７は、図５のフローにおけるＳ２００の一例を示す。図示するように、開口３３の中心が、開口を設ける予定の電子デバイス２０等（すなわち電子デバイス２０）の天面の中心付近に位置するように、絶縁性シート３８を配置した上で、絶縁性シート３８を実装基板１２に貼り付けてよい。 FIG. 7 shows an example of S200 in the flow of FIG. As shown in the figure, the insulating sheet 38 is arranged so that the center of the opening 33 is located near the center of the top surface of the electronic device 20 or the like (that is, the electronic device 20) to be provided with the opening, and then the insulating property is provided. The sheet 38 may be attached to the mounting board 12.
　絶縁性シート３８を配置後に実装基板１２に熱プレスしてよい。熱プレスにより、絶縁性シート３８の絶縁層３４の未硬化又は半硬化の熱硬化性樹脂を硬化することができる。ここで熱硬化性樹脂が完全に硬化した場合には、絶縁性シート３８の絶縁層３４は絶縁保護層３０となる。熱プレスの後に、第１剥離シート３６を絶縁性シート３８から取り除いてよい。なお、熱プレスで熱硬化性樹脂が完全に硬化しない場合には、第１剥離シート３６を取り除いてから更に追加の加熱を行って絶縁層３４の硬化を更に進めて絶縁保護層３０を形成してもよい。 After arranging the insulating sheet 38, it may be hot-pressed on the mounting substrate 12. By hot pressing, the uncured or semi-cured thermosetting resin of the insulating layer 34 of the insulating sheet 38 can be cured. Here, when the thermosetting resin is completely cured, the insulating layer 34 of the insulating sheet 38 becomes the insulating protective layer 30. After hot pressing, the first release sheet 36 may be removed from the insulating sheet 38. If the thermosetting resin is not completely cured by the hot press, the first release sheet 36 is removed and then additional heating is performed to further cure the insulating layer 34 to form the insulating protective layer 30. You may.
　熱プレスは、減圧下又は真空下で行ってよい。これにより、絶縁層３４の実装基板１２への密着度を高めることができる。熱プレスは、１００～２２０℃（好ましくは１２０～１８０℃）において、１～１２０分（好ましくは１～６０分）の条件で行ってよい。追加の加熱を行う場合は、上記熱プレスと同様の温度条件等で行ってよい。 The hot press may be performed under reduced pressure or vacuum. As a result, the degree of adhesion of the insulating layer 34 to the mounting substrate 12 can be increased. The hot press may be performed at 100 to 220 ° C. (preferably 120 to 180 ° C.) under the condition of 1 to 120 minutes (preferably 1 to 60 minutes). When additional heating is performed, it may be performed under the same temperature conditions as the above heat press.
　熱プレス等の加熱を行うことにより絶縁層３４の熱硬化性樹脂が硬化前又は硬化中に溶融して電子デバイス２０等の天面でだれ、開口３２に対応する部分においてテーパー形状となる。これにより、逆テーパー形状の開口３２を形成することができる。 By heating with a hot press or the like, the thermosetting resin of the insulating layer 34 melts before or during curing and drips on the top surface of the electronic device 20 or the like, and becomes a tapered shape in the portion corresponding to the opening 32. As a result, the opening 32 having a reverse taper shape can be formed.
　図８は、絶縁保護層３０が形成された実装基板１２の一例を示す。説明した通り、絶縁層３４を硬化することにより、逆テーパー形状の開口３２を有する絶縁保護層３０が形成される。 FIG. 8 shows an example of the mounting substrate 12 on which the insulating protective layer 30 is formed. As described above, by curing the insulating layer 34, the insulating protective layer 30 having the opening 32 having a reverse taper shape is formed.
　次にＳ３００において、絶縁保護層３０、および、電子デバイス２０等の開口３２に、金属含有層４０を形成する。金属含有層４０は、開口３２の全体、及び、絶縁保護層３０が形成された領域の一部又は全体に形成されてよい。金属含有層４０は、金属含有シート４６から実装基板１２に金属を転写することにより形成されてよい。 Next, in S300, the metal-containing layer 40 is formed in the insulation protective layer 30 and the opening 32 of the electronic device 20 and the like. The metal-containing layer 40 may be formed in the entire opening 32 and a part or the whole of the region where the insulating protective layer 30 is formed. The metal-containing layer 40 may be formed by transferring metal from the metal-containing sheet 46 to the mounting substrate 12.
　図９は、金属含有シート４６の一例を示す。金属含有シート４６は、第２剥離シート４２上に金属材料層４４を形成したものである。 FIG. 9 shows an example of the metal-containing sheet 46. The metal-containing sheet 46 has a metal material layer 44 formed on the second release sheet 42.
　第２剥離シート４２には、第１剥離シート３６と同様のものを用いてよい。 As the second release sheet 42, the same one as the first release sheet 36 may be used.
　金属材料層４４は、熱硬化性樹脂及び導電フィラーを含む導電ペーストにより形成されてよい。例えば、第２剥離シート４２上に導電ペーストを塗布および溶剤を乾燥することにより、金属材料層４４が形成されてよい。導電ペースト中の熱硬化性樹脂は未硬化又は半硬化状態であることが好ましい。塗布方法として前述した絶縁層３４の組成物の塗布方法やスクリーン印刷等の方法が挙げられる。 The metal material layer 44 may be formed of a conductive paste containing a thermosetting resin and a conductive filler. For example, the metal material layer 44 may be formed by applying a conductive paste on the second release sheet 42 and drying the solvent. The thermosetting resin in the conductive paste is preferably in an uncured or semi-cured state. Examples of the coating method include a method of coating the composition of the insulating layer 34 described above and a method of screen printing.
　熱硬化性樹脂として、絶縁層３４の形成に用いたものと同様のものを使用できる。 As the thermosetting resin, the same one used for forming the insulating layer 34 can be used.
　導電フィラーとしては、金属粒子、炭素粒子、導電性樹脂粒子等が挙げられる。導電フィラーは、金属粒子を必須成分として含んでよく、これに加えて炭素粒子等の他成分を１種又は複数種類選択して含んでよい。 Examples of the conductive filler include metal particles, carbon particles, conductive resin particles and the like. The conductive filler may contain metal particles as an essential component, and may additionally contain one or a plurality of other components such as carbon particles.
　金属粒子として、例えば、金、白金、銀、銅、ニッケル、アルミニウム、鉄またはそれらの合金等が挙げられるが、価格と導電性の面から銅が好ましい。また、金属粒子として、金属で構成された核体と、この核体を被覆し、核体とは別の金属で構成された被覆層とを備える粒子であってもよい。核体及び被覆層として上記列挙した金属が用いられる。一例として銅で構成された核体と銀で構成された被覆層を有する銀コート銅粒子等が挙げられる。 Examples of the metal particles include gold, platinum, silver, copper, nickel, aluminum, iron or alloys thereof, but copper is preferable from the viewpoint of price and conductivity. Further, the metal particles may be particles having a nucleolus made of metal and a coating layer covering the nucleolus and made of a metal different from the nucleolus. The metals listed above are used as the nucleolus and coating layer. Examples thereof include silver-coated copper particles having a nucleus composed of copper and a coating layer composed of silver.
　炭素粒子として、例えば、アセチレンブラック、ケッチェンブラック、ファーネスブラック、カーボンナノチューブ、カーボンナノファイバー、グラファイト、フラーレン、カーボンナノウォール、及び、グラフェン等のうち１種又は複数種類を選択したものが挙げられる。導電性樹脂粒子として、例えば、ポリ（３，４－エチレンジオキシチオフェン）、ポリアセチレン、及び、ポリチオフェン等のうち１種又は複数種類を選択したものが挙げられる。 Examples of carbon particles include those selected from one or more of acetylene black, ketjen black, furnace black, carbon nanotubes, carbon nanofibers, graphite, fullerenes, carbon nanowalls, graphene and the like. Examples of the conductive resin particles include those selected from one or more of poly (3,4-ethylenedioxythiophene), polyacetylene, polythiophene and the like.
　導電フィラーの平均粒径は、１～１００μｍ程度であるのが好ましく、３～７５μｍ程度であるのがより好ましく、５～５０μｍ程度であるのがさらに好ましい。導電フィラーの平均粒径は、レーザー回折法又は散乱法等により測定でき、例えば、そのフィラー粒子集合体の投影面積に等しい円を仮定したときの直径の平均値が平均粒径として得られる。導電フィラーの平均粒径を前記範囲とすることにより、後に形成される金属含有層４０の電磁波シールド効果をより高めることができる。また、例えば、熱硬化性樹脂と混合する際の流動性が良好となるため、金属含有層４０の成形性が向上する。 The average particle size of the conductive filler is preferably about 1 to 100 μm, more preferably about 3 to 75 μm, and even more preferably about 5 to 50 μm. The average particle size of the conductive filler can be measured by a laser diffraction method, a scattering method, or the like, and for example, an average value of the diameters assuming a circle equal to the projected area of the filler particle aggregate is obtained as the average particle size. By setting the average particle size of the conductive filler in the above range, the electromagnetic wave shielding effect of the metal-containing layer 40 to be formed later can be further enhanced. Further, for example, the fluidity when mixed with the thermosetting resin is improved, so that the moldability of the metal-containing layer 40 is improved.
　導電フィラーの形状は、球状、針状、鱗片状、フレーク状、樹枝状、ブドウ粒状、繊維状、又は、プレート状等のいかなる形状であってもよい。金属材料層４４中の、導電フィラーの含有量は、特に限定されないが、熱硬化性樹脂１００重量部に対して１００～１５００重量部であるのが好ましく、１００～１０００重量部であるのがより好ましい。これにより、導電性粒子の種類によらず、金属含有層４０に必要かつ十分な導電性を付与することができ、かつ電磁波シールド効果を十分に高めることができる。また、熱硬化性樹脂と導電フィラーとを含む組成物の流動性が高まり、金属材料層４４をより形成し易くなることからも好ましい。 The shape of the conductive filler may be any shape such as spherical, needle-like, scaly, flake-like, dendritic, grape-granular, fibrous, or plate-like. The content of the conductive filler in the metal material layer 44 is not particularly limited, but is preferably 100 to 1500 parts by weight, more preferably 100 to 1000 parts by weight with respect to 100 parts by weight of the thermosetting resin. preferable. Thereby, necessary and sufficient conductivity can be imparted to the metal-containing layer 40 regardless of the type of the conductive particles, and the electromagnetic wave shielding effect can be sufficiently enhanced. It is also preferable because the fluidity of the composition containing the thermosetting resin and the conductive filler is increased, and the metal material layer 44 is more easily formed.
　金属材料層４４は、熱可塑性樹脂を更に含んでもよい。熱可塑性樹脂として絶縁層３４に使用可能なものと同様のものを使用してよい。 The metal material layer 44 may further contain a thermoplastic resin. As the thermoplastic resin, the same one that can be used for the insulating layer 34 may be used.
　金属材料層４４は、その他の添加剤を含んでよい。例えば、添加剤として、架橋剤、着色剤、難燃剤、充填剤、滑剤、ブロッキング防止剤、金属不活性化剤、増粘剤、分散剤、シランカップリング剤、防錆剤、銅害防止剤、還元剤、酸化防止剤、粘着付与樹脂、可塑剤、紫外線吸収剤、消泡剤、及び、レベリング調整剤等のうちの１種類または複数種類を用いてよい。 The metal material layer 44 may contain other additives. For example, as additives, cross-linking agents, colorants, flame retardants, fillers, lubricants, blocking inhibitors, metal deactivating agents, thickeners, dispersants, silane coupling agents, rust inhibitors, copper damage inhibitors. , A reducing agent, an antioxidant, a tackifier resin, a plasticizer, an ultraviolet absorber, a defoaming agent, a leveling adjusting agent, and the like may be used.
　架橋剤として、熱硬化性樹脂の官能基と架橋反応する化合物が挙げられる。例えば、架橋剤としてフェノール系硬化剤、アミン系硬化剤、イソシアネート系硬化剤、エポキシ系硬化剤、アジリジン系硬化剤、及び、金属キレート系硬化剤等のうちの１種類または複数種類を用いてよい。 Examples of the cross-linking agent include compounds that undergo a cross-linking reaction with the functional group of the thermosetting resin. For example, one or more of a phenol-based curing agent, an amine-based curing agent, an isocyanate-based curing agent, an epoxy-based curing agent, an aziridine-based curing agent, a metal chelate-based curing agent, and the like may be used as the cross-linking agent. ..
　着色剤としては、例えば、有機顔料、カーボンブラック、群青、弁柄、亜鉛華、酸化チタン、黒鉛、及び、染料等のうちの１種類または複数種類を用いてよい。難燃剤としては例えば、ハロゲン含有難燃剤、りん含有難燃剤、窒素含有難燃剤、及び、無機難燃剤等のうちの１種類または複数種類を用いてよい。充填剤としては、例えば、ガラス繊維、シリカ、タルク、及び、セラミック等のうちの１種類または複数種類を用いてよい。 As the colorant, for example, one or more of organic pigments, carbon black, ultramarine, petals, zinc oxide, titanium oxide, graphite, dyes and the like may be used. As the flame retardant, for example, one or more of halogen-containing flame retardants, phosphorus-containing flame retardants, nitrogen-containing flame retardants, inorganic flame retardants and the like may be used. As the filler, for example, one or more of glass fiber, silica, talc, ceramic and the like may be used.
　滑剤としては、例えば、脂肪酸エステル、炭化水素樹脂、パラフィン、高級脂肪酸、脂肪酸アミド、脂肪族アルコール、金属石鹸、及び、変性シリコーン等のうちの１種類または複数種類を用いてよい。ブロッキング防止剤としては、例えば、炭酸カルシウム、シリカ、ポリメチルシルセスキオサン、及び、ケイ酸アルミニウム塩等のうちの１種類または複数種類を用いてよい。 As the lubricant, for example, one or more of fatty acid esters, hydrocarbon resins, paraffins, higher fatty acids, fatty acid amides, fatty alcohols, metal soaps, modified silicones and the like may be used. As the blocking inhibitor, for example, one or more of calcium carbonate, silica, polymethylsilsesquiosan, aluminum silicate and the like may be used.
　なお、金属材料層４４は、金属箔であってもよい。この場合、金属箔は導電フィラーで例示したものと同様の金属をめっき等で第２剥離シート４２上に形成したものであってよい。 The metal material layer 44 may be a metal foil. In this case, the metal foil may be a metal foil formed on the second release sheet 42 by plating or the like, which is the same metal as that exemplified for the conductive filler.
　図１０は、金属含有シート４６を用いたＳ３００の一例を示す。図示するように、金属含有シート４６の金属材料層４４側を、絶縁保護層３０および電子デバイス２０等の開口３２に配置して、貼り付ける。次に、金属含有シート４６を熱プレスして、金属材料層４４の熱硬化性樹脂を硬化させることにより、金属含有層４０を形成する。その後に、第２剥離シート４２を取り除く。これにより、図１に示すような電子デバイスパッケージ１００が製造される。 FIG. 10 shows an example of S300 using the metal-containing sheet 46. As shown in the figure, the metal material layer 44 side of the metal-containing sheet 46 is arranged and attached to the opening 32 of the insulating protective layer 30 and the electronic device 20 and the like. Next, the metal-containing sheet 46 is hot-pressed to cure the thermosetting resin of the metal material layer 44, thereby forming the metal-containing layer 40. After that, the second release sheet 42 is removed. As a result, the electronic device package 100 as shown in FIG. 1 is manufactured.
　熱プレスは、減圧下又は真空下で行ってよい。これにより、金属材料層４４の実装基板１２への密着度を高めることができる。熱プレスは、１００～２２０℃（好ましくは１２０～１８０℃）において、１～１２０分（好ましくは１～６０分）の条件で行ってよい。 The hot press may be performed under reduced pressure or vacuum. This makes it possible to increase the degree of adhesion of the metal material layer 44 to the mounting substrate 12. The hot press may be performed at 100 to 220 ° C. (preferably 120 to 180 ° C.) under the condition of 1 to 120 minutes (preferably 1 to 60 minutes).
　なお、Ｓ３００において、金属含有シート４６を用いずに他の方法で金属含有層４０を形成してもよい。例えば、金属含有層４０は、めっき、蒸着、又はスパッタ（以下、「めっき等」ともいう）により金属を堆積することにより形成されてよい。めっき等に用いる金属として例えば、金、白金、銀、銅、ニッケル、アルミニウム、鉄またはそれらの合金が挙げられる。他の例として、金属含有層４０は、導電ペースト（例えば、金属材料層４４に使用可能なもの）を絶縁保護層３０又は（熱プレス前の）絶縁層３４の上に塗工又はスプレー塗布し、これを硬化して形成してもよい。 In S300, the metal-containing layer 40 may be formed by another method without using the metal-containing sheet 46. For example, the metal-containing layer 40 may be formed by depositing a metal by plating, vapor deposition, or sputtering (hereinafter, also referred to as “plating or the like”). Examples of the metal used for plating and the like include gold, platinum, silver, copper, nickel, aluminum, iron and alloys thereof. As another example, the metal-containing layer 40 is coated or spray coated with a conductive paste (eg, one that can be used for the metal material layer 44) on the insulating protective layer 30 or the insulating layer 34 (before hot pressing). , This may be cured to form.
　Ｓ３００の後に必要に応じて、電子デバイスパッケージ１００を個片化する工程を行ってよい。例えば、製品エリアに対応する位置で電子デバイスパッケージ１００をＸ方向及びＹ方向にダイシングし、個別の製品を得てよい。 After S300, if necessary, a step of disassembling the electronic device package 100 may be performed. For example, the electronic device package 100 may be diced in the X direction and the Y direction at a position corresponding to the product area to obtain individual products.
　上記の通り、本実施形態によればＳ１００～Ｓ３００に係るプロセスにより、開口３２を有する絶縁保護層３０を実装基板１２の上に形成する。これにより、開口３２を形成する工程を電子デバイス２０等の上で行う必要がなくなり、デスミア等により電子デバイス２０等が汚染されることがなくなった。また、絶縁保護層３０を熱プレスで形成するので、開口３２が逆テーパー形状となり、その結果、金属含有層４０を千切れにくくし、金属含有層４０の強度を保つという効果を得ることができた。 As described above, according to the present embodiment, the insulating protective layer 30 having the opening 32 is formed on the mounting substrate 12 by the process according to S100 to S300. As a result, it is no longer necessary to perform the step of forming the opening 32 on the electronic device 20 or the like, and the electronic device 20 or the like is not contaminated by desmear or the like. Further, since the insulating protective layer 30 is formed by hot pressing, the opening 32 has a reverse taper shape, and as a result, the effect of making the metal-containing layer 40 difficult to tear and maintaining the strength of the metal-containing layer 40 can be obtained. rice field.
　図１１は、積層体５０を用いた電子デバイスパッケージ１００の製造工程の一例を示す。絶縁性シート３８及び金属含有シート４６を用いて、２回に分けて絶縁保護層３０及び金属含有層４０を順次形成することに代えて、積層体５０を用いて絶縁保護層３０及び金属含有層４０を一度に形成してもよい。 FIG. 11 shows an example of a manufacturing process of the electronic device package 100 using the laminated body 50. Instead of sequentially forming the insulating protective layer 30 and the metal-containing layer 40 in two steps using the insulating sheet 38 and the metal-containing sheet 46, the insulating protective layer 30 and the metal-containing layer are used by using the laminate 50. 40 may be formed at one time.
　積層体５０は、第３剥離シート４８と第３剥離シート４８上に設けられた金属材料層４４と金属材料層４４上に設けられた開口３３を有する絶縁層３４とを含む。絶縁層３４及び金属材料層４４は、上記で説明した材料及び方法を用いて形成されてよい。第３剥離シート４８は、第１剥離シート３６及び第２剥離シート４２と同様のものを用いてよい。 The laminate 50 includes a third release sheet 48, a metal material layer 44 provided on the third release sheet 48, and an insulating layer 34 having an opening 33 provided on the metal material layer 44. The insulating layer 34 and the metal material layer 44 may be formed using the materials and methods described above. As the third release sheet 48, the same ones as the first release sheet 36 and the second release sheet 42 may be used.
　例えば、図６に示すような絶縁性シート３８（絶縁層３４に開口３３を有する）と、図９に示すような金属含有シート４６を用意しておき、金属含有シート４６の金属材料層４４に、絶縁性シート３８の絶縁層３４を重ね合わせ、第１剥離シート３６を剥がせば、積層体５０を得ることができる。この場合、第２剥離シート４２が第３剥離シート４８となる。 For example, an insulating sheet 38 (having an opening 33 in the insulating layer 34) as shown in FIG. 6 and a metal-containing sheet 46 as shown in FIG. 9 are prepared, and the metal material layer 44 of the metal-containing sheet 46 is provided. The laminated body 50 can be obtained by superimposing the insulating layers 34 of the insulating sheets 38 and peeling off the first release sheet 36. In this case, the second release sheet 42 becomes the third release sheet 48.
　実装基板１２に、積層体５０を、開口３３が電子デバイス２０等の少なくとも天面に位置するように配置する。その後に積層体５０を実装基板１２に熱プレスする。これにより実装基板１２上に絶縁層３４の熱硬化性樹脂が硬化した絶縁保護層３０が形成される。また、絶縁層３４の熱硬化性樹脂が硬化前又は硬化中に溶融して電子デバイス２０等の天面でだれ、開口３３に対応する部分においてテーパー形状となる。これにより、逆テーパー形状の開口３２を形成することができる。 The laminate 50 is arranged on the mounting substrate 12 so that the opening 33 is located at least on the top surface of the electronic device 20 or the like. After that, the laminate 50 is hot-pressed on the mounting substrate 12. As a result, the insulating protective layer 30 in which the thermosetting resin of the insulating layer 34 is cured is formed on the mounting substrate 12. Further, the thermosetting resin of the insulating layer 34 melts before or during curing and drips on the top surface of the electronic device 20 or the like, and becomes a tapered shape at the portion corresponding to the opening 33. As a result, the opening 32 having a reverse taper shape can be formed.
　更に金属材料層４４の熱硬化性樹脂が硬化し、金属含有層４０が形成される。その後、第３剥離シート４８が剥離されて取り除かれてよい。 Further, the thermosetting resin of the metal material layer 44 is cured, and the metal-containing layer 40 is formed. After that, the third release sheet 48 may be peeled off and removed.
　熱プレスは、減圧下又は真空下で行ってよい。これにより、絶縁層３４及び金属材料層４４の実装基板１２への密着度を高めることができる。熱プレスは、１００～２２０℃（好ましくは１２０～１８０℃）において、１～１２０分（好ましくは１～６０分）の条件で行ってよい。 The hot press may be performed under reduced pressure or vacuum. This makes it possible to increase the degree of adhesion of the insulating layer 34 and the metal material layer 44 to the mounting substrate 12. The hot press may be performed at 100 to 220 ° C. (preferably 120 to 180 ° C.) under the condition of 1 to 120 minutes (preferably 1 to 60 minutes).
　図１１の実施形態によれば、絶縁保護層３０と金属含有層４０とを一度の転写工程で電子デバイス２０等に付与することができる。これにより、電子デバイスパッケージ１００の製造方法における生産性を更に高めることができる。 According to the embodiment of FIG. 11, the insulating protective layer 30 and the metal-containing layer 40 can be attached to the electronic device 20 or the like in one transfer step. Thereby, the productivity in the manufacturing method of the electronic device package 100 can be further increased.
　以上、本発明を実施の形態を用いて説明したが、本発明の技術的範囲は上記実施の形態に記載の範囲には限定されない。上記実施の形態に、多様な変更または改良を加えることが可能であることが当業者に明らかである。そのような変更または改良を加えた形態も本発明の技術的範囲に含まれ得ることが、請求の範囲の記載から明らかである。 Although the present invention has been described above using the embodiments, the technical scope of the present invention is not limited to the scope described in the above embodiments. It will be apparent to those skilled in the art that various changes or improvements can be made to the above embodiments. It is clear from the claims that embodiments with such modifications or improvements may also be included in the technical scope of the invention.
　請求の範囲、明細書、および図面中において示した方法における動作、手順、ステップ、および段階等の各処理の実行順序は、特段「より前に」、「先だって」等と明示しておらず、また、前の処理の結果生じたものを後の処理で用いるのでない限り、任意の順序で実現しうることに留意すべきである。請求の範囲、明細書、および図面中の動作フローに関して、便宜上「まず、」、「次に、」等を用いて説明したとしても、この順で実施することが必須であることを意味するものではない。 The execution order of each process such as an operation, a procedure, a step, and a step in the claims, the specification, and the method shown in the drawing is not specified as "before", "before", etc. It should also be noted that this can be achieved in any order, unless the result of the previous process is used in the subsequent process. Even if the claims, the description, and the operation flow in the drawings are explained using "first", "next", etc. for convenience, it means that it is essential to carry out in this order. is not.
　１０　回路基板
　１２　実装基板
　２０　電子デバイス
　２２　電子デバイス
　３０　絶縁保護層
　３２　開口
　３３　開口
　３４　絶縁層
　３６　第１剥離シート
　３８　絶縁性シート
　４０　金属含有層
　４２　第２剥離シート
　４４　金属材料層
　４６　金属含有シート
　４８　第３剥離シート
　５０　積層体
　１００　電子デバイスパッケージ 10 Circuit board 12 Mounting board 20 Electronic device 22 Electronic device 30 Insulation protective layer 32 Opening 33 Opening 34 Insulation layer 36 First release sheet 38 Insulation sheet 40 Metal-containing layer 42 Second release sheet 44 Metal material layer 46 Metal-containing sheet 48 Third release sheet 50 Laminated body 100 Electronic device package

Claims (16)

  1. 　表面に導電回路が設けられ、電子デバイスが実装された実装基板に、開口を有する絶縁性シートを、前記開口が前記電子デバイスの少なくとも天面に位置するように配置して、絶縁保護層を形成する工程を含む電子デバイスパッケージの製造方法。 An insulating protective layer is formed by arranging an insulating sheet having an opening on a mounting substrate having a conductive circuit on the surface and mounting an electronic device so that the opening is located at least on the top surface of the electronic device. A method of manufacturing an electronic device package including a process of manufacturing.
  2. 　前記絶縁保護層を形成する工程は、前記絶縁性シートを配置後に前記実装基板に熱プレスすることを含む、
    　請求項１に記載の製造方法。     The step of forming the insulating protective layer includes hot-pressing the mounting substrate after placing the insulating sheet.
    The manufacturing method according to claim 1.
  3. 　前記絶縁性シートは、未硬化又は半硬化の熱硬化性樹脂を含み、
    　前記絶縁保護層を形成する工程は、
    　前記熱プレスにより、前記未硬化又は半硬化の熱硬化性樹脂を硬化することを含む、
    　請求項２に記載の製造方法。     The insulating sheet contains an uncured or semi-cured thermosetting resin and contains.
    The step of forming the insulating protective layer is
    The method comprises curing the uncured or semi-cured thermosetting resin by the heat press.
    The manufacturing method according to claim 2.
  4. 　前記絶縁性シートは、絶縁層及び第１剥離シートを有し、
    　前記熱プレスの後に、前記第１剥離シートを前記絶縁性シートから取り除く工程を更に含む、
    　請求項２又は３に記載の製造方法。     The insulating sheet has an insulating layer and a first release sheet.
    After the hot press, the step of removing the first release sheet from the insulating sheet is further included.
    The manufacturing method according to claim 2 or 3.
  5. 　前記絶縁保護層および前記電子デバイスの前記開口に、金属含有層を形成する工程をさらに含む、請求項１から４のいずれか１項に記載の製造方法。 The manufacturing method according to any one of claims 1 to 4, further comprising a step of forming a metal-containing layer in the insulation protective layer and the opening of the electronic device.
  6. 　前記絶縁保護層および前記電子デバイスの前記開口に、金属含有層を形成する工程は、
    　第２剥離シート上に金属材料層を形成した金属含有シートの前記金属材料層側を、前記絶縁保護層および前記電子デバイスの前記開口に配置し、
    　前記金属含有シートを熱プレスして前記金属含有層を形成し、
    　前記第２剥離シートを取り除くことを含む、
    　請求項５に記載の製造方法。     The step of forming a metal-containing layer in the insulation protective layer and the opening of the electronic device is a step of forming the metal-containing layer.
    The metal material layer side of the metal-containing sheet having the metal material layer formed on the second release sheet is arranged in the insulation protective layer and the opening of the electronic device.
    The metal-containing sheet is hot-pressed to form the metal-containing layer.
    Including removing the second release sheet,
    The manufacturing method according to claim 5.
  7. 　前記金属材料層は、未硬化又は半硬化の熱硬化性樹脂及び導電フィラーを含み、
    　前記熱プレスで前記金属材料層の前記未硬化又は半硬化の熱硬化性樹脂を硬化させることにより、前記金属含有層を形成する、
    　請求項６に記載の製造方法。     The metal material layer contains an uncured or semi-cured thermosetting resin and a conductive filler.
    The metal-containing layer is formed by curing the uncured or semi-cured thermosetting resin of the metal material layer with the heat press.
    The manufacturing method according to claim 6.
  8. 　前記絶縁保護層および前記電子デバイスの前記開口に、金属含有層を形成する工程は、
    　前記絶縁保護層および前記電子デバイスの前記開口に、めっき又は蒸着、スパッタ、導電ペーストにより金属を堆積することにより行う、
    　請求項５に記載の製造方法。     The step of forming a metal-containing layer in the insulation protective layer and the opening of the electronic device is a step of forming the metal-containing layer.
    This is performed by depositing a metal on the insulating protective layer and the opening of the electronic device by plating or vapor deposition, sputtering, or a conductive paste.
    The manufacturing method according to claim 5.
  9. 　表面に導電回路が設けられた基板上に電子デバイスが実装された実装基板に、第３剥離シートと前記第３剥離シート上に設けられた金属材料層と前記金属材料層上に設けられた開口を有する絶縁層とを含む積層体を、前記開口が前記電子デバイスの少なくとも天面に位置するように配置して、前記実装基板上に前記絶縁層から形成される絶縁保護層と前記金属材料層から形成される金属含有層とを形成する工程を含む、
    　電子デバイスパッケージの製造方法。     A third release sheet, a metal material layer provided on the third release sheet, and an opening provided on the metal material layer on a mounting substrate on which an electronic device is mounted on a substrate provided with a conductive circuit on the surface. The laminate including the insulating layer having the above is arranged so that the opening is located at least on the top surface of the electronic device, and the insulating protective layer and the metal material layer formed from the insulating layer on the mounting substrate. Including the step of forming a metal-containing layer formed from
    How to manufacture an electronic device package.
  10. 　前記絶縁層は、熱硬化性樹脂を含み、
    　前記金属材料層が、熱硬化性樹脂及び導電フィラーを含み、
    　前記金属材料層から形成される金属含有層と前記絶縁層から形成される絶縁保護層とを形成する工程は、前記積層体を前記実装基板に配置後に熱プレスすることを含み、
    　前記熱プレスの後に、前記第３剥離シートを前記積層体から取り除く工程を更に含む、
    　請求項９に記載の製造方法。     The insulating layer contains a thermosetting resin and contains.
    The metal material layer contains a thermosetting resin and a conductive filler, and the metal material layer contains a thermosetting resin and a conductive filler.
    The step of forming the metal-containing layer formed from the metal material layer and the insulating protective layer formed from the insulating layer comprises placing the laminate on the mounting substrate and then heat-pressing it.
    After the hot press, the step of removing the third release sheet from the laminate is further included.
    The manufacturing method according to claim 9.
  11. 　表面に導電回路が設けられた回路基板と、
    　前記回路基板上に配置された電子デバイスと、
    　前記回路基板及び前記電子デバイス上に設けられた絶縁保護層と、
    　を備え、
    　前記絶縁保護層は、少なくとも前記電子デバイスの天面の一部において逆テーパー形状の開口が設けられる、
    　電子デバイスパッケージ。     A circuit board with a conductive circuit on the surface and
    Electronic devices arranged on the circuit board and
    An insulating protective layer provided on the circuit board and the electronic device,
    Equipped with
    The insulating protective layer is provided with a reverse-tapered opening at least in a part of the top surface of the electronic device.
    Electronic device package.
  12. 　表面に導電回路が設けられた回路基板と、
    　前記回路基板上に配置された電子デバイスと、
    　前記回路基板及び前記電子デバイス上に設けられた絶縁保護層と、
    　を備え、
    　前記絶縁保護層は、少なくとも前記電子デバイスの天面の一部において開口が設けられ、
    　前記電子デバイスの側面及び前記電子デバイスの天面との角部分上の絶縁保護層の厚みは、前記電子デバイスの側面及び前記回路基板とにより形成される凹部上の絶縁保護層の厚みの１～３０％である、
    　電子デバイスパッケージ。     A circuit board with a conductive circuit on the surface and
    Electronic devices arranged on the circuit board and
    An insulating protective layer provided on the circuit board and the electronic device,
    Equipped with
    The insulating protective layer is provided with an opening at least in a part of the top surface of the electronic device.
    The thickness of the insulating protective layer on the side surface of the electronic device and the corner portion with the top surface of the electronic device is 1 to 1 to the thickness of the insulating protective layer on the recess formed by the side surface of the electronic device and the circuit board. 30%,
    Electronic device package.
  13. 　前記絶縁保護層は、熱硬化性樹脂の硬化物である、
    　請求項１１又は１２に記載の電子デバイスパッケージ。     The insulating protective layer is a cured product of a thermosetting resin.
    The electronic device package according to claim 11 or 12.
  14. 　前記絶縁保護層は、前記電子デバイスの天面及び側面の一部において開口が設けられる、
    　請求項１２又は１３に記載の電子デバイスパッケージ。     The insulating protective layer is provided with an opening in a part of the top surface and the side surface of the electronic device.
    The electronic device package according to claim 12 or 13.
  15. 　前記絶縁保護層及び前記開口上に、金属含有層が形成される、
    　請求項１１から１４のいずれか１項に記載の電子デバイスパッケージ。     A metal-containing layer is formed on the insulating protective layer and the opening.
    The electronic device package according to any one of claims 11 to 14.
  16. 　前記金属含有層は、導電フィラーが分散された樹脂層、又は、金属薄層である、
    　請求項１５に記載の電子デバイスパッケージ。     The metal-containing layer is a resin layer or a thin metal layer in which a conductive filler is dispersed.
    The electronic device package according to claim 15.
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Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998007065A1 (en) * 1996-08-08 1998-02-19 Seiko Epson Corporation Method for coating semiconductor element with resin, coating resin, and liquid crystal display device
JP2006303119A (en) * 2005-04-19 2006-11-02 Kyocera Chemical Corp Method of manufacturing semiconductor device and semiconductor sealing resin sheet
JP2007188920A (en) * 2006-01-11 2007-07-26 Nec Corp Laminated module and its manufacturing method
JP2011032436A (en) * 2009-08-05 2011-02-17 Nitto Denko Corp Sheet-like epoxy resin composition for sealing electronic component and electronic component device using the same
JP2011249484A (en) * 2010-05-25 2011-12-08 Panasonic Corp Method of manufacturing semiconductor device, and semiconductor device
JP2018056285A (en) * 2016-09-28 2018-04-05 富士通株式会社 Electronic device, manufacturing method for the same, and electronic equipment
JP2019091866A (en) * 2017-11-17 2019-06-13 東洋インキＳｃホールディングス株式会社 Method for manufacturing electronic element
JP2020009823A (en) * 2018-07-04 2020-01-16 三菱電機株式会社 Semiconductor device and manufacturing method thereof
JP2020117672A (en) * 2019-01-28 2020-08-06 株式会社ダイセル Sheet-like prepreg for sealing fan-out package
JP2020529735A (en) * 2017-08-03 2020-10-08 ゼネラル・エレクトリック・カンパニイ Electronics package with integrated electromagnetic interference shield and its manufacturing method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018006536A (en) * 2016-06-30 2018-01-11 東洋インキＳｃホールディングス株式会社 Component mount substrate, manufacturing method thereof, laminate, electromagnetic wave shield sheet and electronic apparatus
JP6747129B2 (en) * 2016-07-20 2020-08-26 東洋インキＳｃホールディングス株式会社 Electronic device
JP6388064B2 (en) * 2017-02-10 2018-09-12 東洋インキＳｃホールディングス株式会社 Electronic component mounting substrate, laminate, electromagnetic wave shielding sheet, and electronic device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998007065A1 (en) * 1996-08-08 1998-02-19 Seiko Epson Corporation Method for coating semiconductor element with resin, coating resin, and liquid crystal display device
JP2006303119A (en) * 2005-04-19 2006-11-02 Kyocera Chemical Corp Method of manufacturing semiconductor device and semiconductor sealing resin sheet
JP2007188920A (en) * 2006-01-11 2007-07-26 Nec Corp Laminated module and its manufacturing method
JP2011032436A (en) * 2009-08-05 2011-02-17 Nitto Denko Corp Sheet-like epoxy resin composition for sealing electronic component and electronic component device using the same
JP2011249484A (en) * 2010-05-25 2011-12-08 Panasonic Corp Method of manufacturing semiconductor device, and semiconductor device
JP2018056285A (en) * 2016-09-28 2018-04-05 富士通株式会社 Electronic device, manufacturing method for the same, and electronic equipment
JP2020529735A (en) * 2017-08-03 2020-10-08 ゼネラル・エレクトリック・カンパニイ Electronics package with integrated electromagnetic interference shield and its manufacturing method
JP2019091866A (en) * 2017-11-17 2019-06-13 東洋インキＳｃホールディングス株式会社 Method for manufacturing electronic element
JP2020009823A (en) * 2018-07-04 2020-01-16 三菱電機株式会社 Semiconductor device and manufacturing method thereof
JP2020117672A (en) * 2019-01-28 2020-08-06 株式会社ダイセル Sheet-like prepreg for sealing fan-out package

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