JP2011202973A5 - - Google Patents

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Publication number
JP2011202973A5
JP2011202973A5 JP2010067843A JP2010067843A JP2011202973A5 JP 2011202973 A5 JP2011202973 A5 JP 2011202973A5 JP 2010067843 A JP2010067843 A JP 2010067843A JP 2010067843 A JP2010067843 A JP 2010067843A JP 2011202973 A5 JP2011202973 A5 JP 2011202973A5
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Japan
Prior art keywords
parameter
plasma processing
impedance
current value
voltage value
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JP2010067843A
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English (en)
Japanese (ja)
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JP5498217B2 (ja
JP2011202973A (ja
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Priority to JP2010067843A priority Critical patent/JP5498217B2/ja
Priority claimed from JP2010067843A external-priority patent/JP5498217B2/ja
Priority to US13/048,104 priority patent/US8686711B2/en
Publication of JP2011202973A publication Critical patent/JP2011202973A/ja
Publication of JP2011202973A5 publication Critical patent/JP2011202973A5/ja
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Publication of JP5498217B2 publication Critical patent/JP5498217B2/ja
Expired - Fee Related legal-status Critical Current
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JP2010067843A 2010-03-24 2010-03-24 高周波測定装置、および、高周波測定装置の校正方法 Expired - Fee Related JP5498217B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010067843A JP5498217B2 (ja) 2010-03-24 2010-03-24 高周波測定装置、および、高周波測定装置の校正方法
US13/048,104 US8686711B2 (en) 2010-03-24 2011-03-15 High-frequency measuring device and high-frequency measuring device calibration method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010067843A JP5498217B2 (ja) 2010-03-24 2010-03-24 高周波測定装置、および、高周波測定装置の校正方法

Publications (3)

Publication Number Publication Date
JP2011202973A JP2011202973A (ja) 2011-10-13
JP2011202973A5 true JP2011202973A5 (enExample) 2013-03-14
JP5498217B2 JP5498217B2 (ja) 2014-05-21

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JP2010067843A Expired - Fee Related JP5498217B2 (ja) 2010-03-24 2010-03-24 高周波測定装置、および、高周波測定装置の校正方法

Country Status (2)

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US (1) US8686711B2 (enExample)
JP (1) JP5498217B2 (enExample)

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US12372565B2 (en) * 2022-07-12 2025-07-29 Texas Instruments Incorporated Methods and apparatus for determining parasitic capacitances
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