JP2011169681A - Apparatus for testing semiconductor device - Google Patents

Apparatus for testing semiconductor device Download PDF

Info

Publication number
JP2011169681A
JP2011169681A JP2010032417A JP2010032417A JP2011169681A JP 2011169681 A JP2011169681 A JP 2011169681A JP 2010032417 A JP2010032417 A JP 2010032417A JP 2010032417 A JP2010032417 A JP 2010032417A JP 2011169681 A JP2011169681 A JP 2011169681A
Authority
JP
Japan
Prior art keywords
power switch
device under
under test
circuit
test
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010032417A
Other languages
Japanese (ja)
Other versions
JP5258810B2 (en
Inventor
Yoshihiko Hirota
慶彦 広田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2010032417A priority Critical patent/JP5258810B2/en
Publication of JP2011169681A publication Critical patent/JP2011169681A/en
Application granted granted Critical
Publication of JP5258810B2 publication Critical patent/JP5258810B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide an apparatus for testing semiconductor devices and capable of reliably reducing overcurrent of when an element to be measure made of a semiconductor device is broken when short-circuit destruction withstanding capability test is performed on the element to be measured. <P>SOLUTION: A test apparatus comprises a DC power source 1 for applying a DC voltage to the element to be measured 3, a semiconductor device to be tested; a power switch 2 serially connected to the element to be measured 3 and having a maximum output current value greater than a maximum output current value of the element to be measured 3; and control circuits 9 and 10 for controlling the power switch 2 as to pass a current of its maximum output current value when the element to be measured 3 is tested. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

この発明は、半導体装置の短絡破壊耐量試験に用いられる試験装置に関するものである。   The present invention relates to a test apparatus used for a short-circuit breakdown tolerance test of a semiconductor device.

ＩＧＢＴやＭＯＳＦＥＴに代表される半導体装置に対しては、半導体装置の安全動作領域を保証するために半導体製造工程において破壊耐量試験が実施されている。破壊耐量試験のひとつとして短絡破壊耐量試験がある。   For semiconductor devices typified by IGBTs and MOSFETs, a breakdown tolerance test is performed in the semiconductor manufacturing process in order to guarantee a safe operation region of the semiconductor device. One of the breakdown resistance tests is a short-circuit breakdown resistance test.

短絡試験装置の基本構成として、試験対象の半導体装置（以下、被測定素子という）に直流電圧を印加する直流電源と、被測定素子に流れる電流を検出する電流検出機構とを有する構成がある。   As a basic configuration of the short-circuit test apparatus, there is a configuration having a DC power source that applies a DC voltage to a semiconductor device to be tested (hereinafter referred to as a device under test) and a current detection mechanism that detects a current flowing through the device under test.

ここで、被測定素子の短絡破壊耐量試験について説明する。被測定素子に高い直流電圧を印加した状態で被測定素子をターンオン（オン状態への切り替え）すると、被測定素子には被測定素子の最大出力電流の値に制限された短絡電流が流れる。このとき、この短絡電流のエネルギーにより、被測定素子が破壊することがある。また、被測定素子の短絡破壊モードとしては、ゲートのターンオフ（オフ状態への切り替え）後に被測定素子に高い直流電圧が印加され続けることによって被測定素子が破壊するモードがある。被測定素子が破壊すると、被測定素子は短絡状態となり、そのため、試験装置は、電源短絡状態となり、極めて大きな電流（過電流）が流れ、故障に至る場合がある。   Here, a short circuit breakdown tolerance test of the element to be measured will be described. When the device under test is turned on (switched to the on state) with a high DC voltage applied to the device under test, a short-circuit current limited to the maximum output current value of the device under test flows through the device under test. At this time, the device under measurement may be destroyed by the energy of the short-circuit current. In addition, as a short-circuit breakdown mode of the device under test, there is a mode in which the device under test is destroyed by continuing to apply a high DC voltage to the device under measurement after the gate is turned off (switched to the off state). When the element to be measured is destroyed, the element to be measured is in a short-circuited state. Therefore, the test apparatus is in a power supply short-circuited state, and a very large current (overcurrent) flows, leading to failure.

このような過電流に対する被測定素子の保護方法として、特許文献１には、被測定素子をオフするタイミングとほぼ同時にパワースイッチをオフする方法が開示されている。   As a method for protecting the device under measurement against such an overcurrent, Patent Document 1 discloses a method of turning off the power switch almost simultaneously with the timing of turning off the device under measurement.

特開２００５−３４５２４７号公報（２頁３行〜３頁１３行）JP-A-2005-345247 (page 2, line 3 to page 3, line 13)

前述のように短絡破壊耐量試験において被測定素子の破壊が発生すると、直ちに過電流が流れる。前述の特許文献１に記載の保護方式では、被測定素子をオフのタイミングとほぼ同時にパワースイッチをオフするため、直流電源から印加された直流電圧はパワースイッチと被測定素子とで分圧され、被測定素子に印加される電圧が大きく低下する。そのため、正確な短絡破壊耐量試験が出来ないという問題がある。   As described above, when the element under measurement occurs in the short-circuit breakdown tolerance test, an overcurrent immediately flows. In the protection method described in Patent Document 1, since the power switch is turned off almost simultaneously with the timing of turning off the device under test, the DC voltage applied from the DC power source is divided between the power switch and the device under test, The voltage applied to the device under test is greatly reduced. Therefore, there is a problem that an accurate short-circuit breakdown tolerance test cannot be performed.

本発明は、被測定素子３に対して正確な短絡破壊耐量試験ができ、かつ短絡破壊耐量試験時において被測定素子が破壊したときの過電流の発生を確実に抑制することができる半導体装置の試験装置を提供することを目的とする。   The present invention provides a semiconductor device that can perform an accurate short-circuit breakdown tolerance test on the device under test 3 and can reliably suppress the occurrence of overcurrent when the device under test breaks during the short-circuit breakdown resistance test. An object is to provide a test apparatus.

この発明に係わる半導体装置の試験装置は、半導体装置の短絡破壊耐量の試験を行うものであって、試験対象の半導体装置である被測定素子に直流電圧を印加する直流電源と、被測定素子と直列に接続され、最大出力電流値が被測定素子の最大出力電流値よりも大きいパワースイッチと、被測定素子の試験時に、パワースイッチがその最大出力電流値の電流を流すことが可能なようにパワースイッチを制御する制御回路と、を備えたことを特徴とする。   A test apparatus for a semiconductor device according to the present invention tests a short-circuit breakdown tolerance of a semiconductor device, and includes a DC power source for applying a DC voltage to an element to be measured, which is a semiconductor device to be tested, A power switch that is connected in series and has a maximum output current value that is greater than the maximum output current value of the device under test, and that the power switch can pass the current of the maximum output current value when testing the device under test. And a control circuit for controlling the power switch.

この発明によれば、被測定素子が短絡破壊したときに流れる短絡電流は、被測定素子と直列に接続されたパワースイッチによりその最大出力電流に制限される。これにより、従来のような過電流の発生を確実に抑制することができる。また、試験装置の故障を防止できる。さらに、被測定素子のオフのタイミングとほぼ同時にパワースイッチをオフするのではないので、被測定素子には直流電源電圧がそのまま印加される。そのため、被測定素子に対して正確な短絡破壊耐量試験ができる。   According to this invention, the short-circuit current that flows when the device under test breaks short-circuited is limited to its maximum output current by the power switch connected in series with the device under test. Thereby, generation | occurrence | production of the overcurrent like the past can be suppressed reliably. Also, failure of the test apparatus can be prevented. Further, since the power switch is not turned off substantially simultaneously with the timing of turning off the device under test, the DC power supply voltage is applied to the device under test as it is. Therefore, an accurate short-circuit breakdown tolerance test can be performed on the element to be measured.

本発明の実施の形態１の短絡破壊耐量試験装置のブロック図1 is a block diagram of a short-circuit breakdown tolerance test apparatus according to Embodiment 1 of the present invention. 本発明の実施の形態１のタイミングチャートTiming chart of Embodiment 1 of the present invention パワースイッチの代表特性Typical characteristics of power switches 本発明の実施の形態２の短絡破壊耐量試験装置のブロック図Block diagram of a short-circuit breakdown tolerance test apparatus according to Embodiment 2 of the present invention 本発明の実施の形態２のタイミングチャートTiming chart of Embodiment 2 of the present invention 本発明の実施の形態３の短絡破壊耐量試験装置のブロック図Block diagram of a short-circuit breakdown tolerance test apparatus according to Embodiment 3 of the present invention 従来の短絡破壊耐量試験装置の図Figure of conventional short-circuit breakdown tolerance test equipment

（実施の形態１）
図１は本発明の実施の形態１の半導体装置の短絡破壊耐量試験装置のブロック図である。本実施の形態の短絡破壊耐量試験装置の試験対象の被測定素子３はＩＧＢＴやＭＯＳＦＥＴ等の半導体装置である。本実施形態の試験装置は、被測定素子３に直流電圧を印加する直流電源１と、被測定素子３を所定の状態に制御するためのゲート駆動回路４およびゲート抵抗５と、被測定素子３と直列に接続されたパワースイッチ２と、パワースイッチ２用のゲート駆動電源９およびゲート抵抗１０とを備える。特に、パワースイッチ２は、被測定素子３の最大出力電流よりも十分に高い最大出力電流を有する素子である。また、ゲート駆動電源９は、被測定素子３の最大出力電流(例えば100A)に対し、パワースイッチ２を適切な最大出力電流値(例えば150A)に制御するため、所望の電圧値に設定することが可能である。 (Embodiment 1)
FIG. 1 is a block diagram of a short-circuit breakdown tolerance test apparatus for a semiconductor device according to Embodiment 1 of the present invention. The element to be measured 3 to be tested by the short-circuit breakdown resistance test apparatus of the present embodiment is a semiconductor device such as IGBT or MOSFET. The test apparatus according to this embodiment includes a DC power source 1 that applies a DC voltage to the element 3 to be measured, a gate drive circuit 4 and a gate resistor 5 for controlling the element 3 to be measured to a predetermined state, and the element 3 to be measured. , A power switch 2 connected in series, and a gate drive power source 9 and a gate resistor 10 for the power switch 2. In particular, the power switch 2 is an element having a maximum output current sufficiently higher than the maximum output current of the element 3 to be measured. Further, the gate drive power supply 9 is set to a desired voltage value in order to control the power switch 2 to an appropriate maximum output current value (for example, 150 A) with respect to the maximum output current (for example, 100 A) of the device 3 to be measured. Is possible.

次に、実施の形態１の試験装置の動作を説明する。実施の形態１の試験装置の動作は図２のタイミングチャートに従う。なお、図２では被破壊時の電圧・電流波形を実線で示し、破壊時の電圧・電流波形を点線で示している。試験時には、パワースイッチ２がオン状態に制御されるとともに、直流電源１からの直流電圧が被測定素子に印加される。このとき、パワースイッチ２として用いるＩＧＢＴまたはＭＯＳＦＥＴは図３に示すように最大出力電流がゲート電圧に依存する。そのため、パワースイッチ２は直流電源９とゲート抵抗１０により被測定素子３の最大出力電流値(例えば100A)よりも高い最大出力電流(例えば150A)になるよう、直流電源9の電圧値を設定する。時刻t0において、ゲート駆動回路４を動作させて被測定素子３をオン状態に切り替える。それにより、試験装置には、被測定素子３の最大出力電流値に制限された電流が、被測定素子３とパワースイッチ２を介して流れる。時刻t1において、ゲート駆動回路４により被測定素子３をオフ状態に切り替える。これにより、被測定素子３のコレクタ・エミッタ間に直流電源１の出力電圧が印加される。時刻t2において、被測定素子３が破壊すると、被測定素子３は短絡状態となり、短絡電流が流れるが、短絡電流の大きさは、パワースイッチ２の最大出力電流値に制限される。そのため、従来のような過電流の発生を確実に防止することができる。試験終了後、パワースイッチ２をオフ状態に切り替えることで、短絡電流を遮断することができる。また、試験装置の故障を防止できる。   Next, the operation of the test apparatus according to the first embodiment will be described. The operation of the test apparatus of the first embodiment follows the timing chart of FIG. In FIG. 2, the voltage / current waveforms at the time of destruction are indicated by solid lines, and the voltage / current waveforms at the time of destruction are indicated by dotted lines. During the test, the power switch 2 is controlled to be in an on state, and a DC voltage from the DC power source 1 is applied to the element to be measured. At this time, the maximum output current of the IGBT or MOSFET used as the power switch 2 depends on the gate voltage as shown in FIG. Therefore, the power switch 2 sets the voltage value of the DC power source 9 so that the maximum output current (for example, 150 A) is higher than the maximum output current value (for example, 100 A) of the device 3 to be measured by the DC power source 9 and the gate resistor 10. . At time t0, the gate drive circuit 4 is operated to switch the device under test 3 to the on state. Thereby, a current limited to the maximum output current value of the device under test 3 flows through the device under test 3 and the power switch 2 in the test apparatus. At time t1, the device under test 3 is switched to the OFF state by the gate drive circuit 4. As a result, the output voltage of the DC power source 1 is applied between the collector and emitter of the element 3 to be measured. When the element 3 to be measured is destroyed at time t2, the element 3 to be measured is short-circuited and a short-circuit current flows. However, the magnitude of the short-circuit current is limited to the maximum output current value of the power switch 2. Therefore, it is possible to reliably prevent the occurrence of overcurrent as in the conventional case. After the test is completed, the short circuit current can be interrupted by switching the power switch 2 to the off state. Also, failure of the test apparatus can be prevented.

以上のように、実施の形態１の半導体装置の試験装置によれば、被測定素子３のオフのタイミングとほぼ同時にパワースイッチ２をオフするのではないので、被測定素子３には直流電源電圧がそのまま印加される。そのため、被測定素子３に対して正確な短絡破壊耐量試験ができる。   As described above, according to the semiconductor device test apparatus of the first embodiment, the power switch 2 is not turned off almost simultaneously with the turn-off timing of the device under test 3. Is applied as is. Therefore, an accurate short circuit breakdown tolerance test can be performed on the device under test 3.

（実施の形態２）
図４は本発明の実施の形態２の半導体装置の短絡破壊耐量試験装置のブロック図である。実施の形態２の試験装置は、実施の形態１の試験装置に対してさらにパワースイッチ２のゲート駆動電源として、被測定素子３の最大出力電流よりパワースイッチ２の最大出力電流が高くなるようなゲート電圧を与えるゲート駆動電源９と、被測定素子３の最大出力電流よりパワースイッチ２の最大出力電流が低くなるようなゲート電圧を与えるゲート駆動電源１１と、被測定素子３を駆動するゲート駆動回路４から出力されるゲート電圧の立下り点を検出するためのゲート立下り検出器１２と、ゲート立下り検出器１２の出力信号によって切り替わるリレー１３、１４とを有する。すなわち、第２の実施の形態では、パワースイッチ２の最大出力電流が２段階に制御可能に構成されている。 (Embodiment 2)
FIG. 4 is a block diagram of a short-circuit breakdown tolerance test apparatus for a semiconductor device according to the second embodiment of the present invention. The test apparatus according to the second embodiment has a higher maximum output current of the power switch 2 than the maximum output current of the device under test 3 as a gate drive power source for the power switch 2 as compared with the test apparatus of the first embodiment. A gate drive power supply 9 for applying a gate voltage, a gate drive power supply 11 for applying a gate voltage such that the maximum output current of the power switch 2 is lower than the maximum output current of the device under test 3, and a gate drive for driving the device under test 3 A gate falling detector 12 for detecting a falling point of the gate voltage output from the circuit 4 and relays 13 and 14 that are switched by an output signal of the gate falling detector 12 are provided. That is, in the second embodiment, the maximum output current of the power switch 2 can be controlled in two stages.

次に、実施の形態２の試験装置の動作を説明する。実施の形態２の試験装置の動作は図５のタイミングチャートに従う。なお、図５では被破壊時の電圧・電流波形を実線で示し、破壊時の電圧・電流波形を点線で示している。試験開始時はリレー１３をオンし、リレー１４をオフとする。これにより、パワースイッチ２は最大出力電流が被測定素子３の最大出力電流値(例えば100A)よりも高い電流値(例えば150A)に制御された状態でオン状態となる。時刻t0において、ゲート駆動回路４を動作させて被測定素子３をオン状態にし、時刻t1において、ゲート駆動回路４により被測定素子３をオフ状態に切り替える。この切り替えの際、ゲート立下り検出器１２によりゲート駆動回路４の出力電圧の立ち下がり点が検出されると、リレー１３をオフし、リレー１４をオンとする。リレー１４のオンへの切り替えにより、パワースイッチ２は最大出力電流が被測定素子３(例えば100A)よりも低い電流値(例えば1A)に制御された状態でオン状態となる。時刻t2において、この状態で被測定素子３が破壊した場合、パワースイッチ２の最大出力電流値がゲート駆動電源１１によって被測定素子３の最大出力電流値よりも低い電流値(例えば1A)に制限されているので、試験装置には、この制限された大きさの電流が被測定素子３とパワースイッチ２を介して流れる。   Next, the operation of the test apparatus according to the second embodiment will be described. The operation of the test apparatus of the second embodiment follows the timing chart of FIG. In FIG. 5, the voltage / current waveforms at the time of destruction are indicated by solid lines, and the voltage / current waveforms at the time of destruction are indicated by dotted lines. At the start of the test, the relay 13 is turned on and the relay 14 is turned off. Thereby, the power switch 2 is turned on in a state where the maximum output current is controlled to a current value (for example, 150 A) higher than the maximum output current value (for example, 100 A) of the element 3 to be measured. At time t0, the gate drive circuit 4 is operated to turn on the device under test 3 and at time t1, the gate drive circuit 4 switches the device under test 3 to the off state. At the time of this switching, when the falling point of the output voltage of the gate drive circuit 4 is detected by the gate falling detector 12, the relay 13 is turned off and the relay 14 is turned on. By switching on the relay 14, the power switch 2 is turned on in a state where the maximum output current is controlled to a current value (for example, 1A) lower than that of the element 3 (for example, 100A). If the device under test 3 is destroyed in this state at time t2, the maximum output current value of the power switch 2 is limited to a current value (for example, 1A) lower than the maximum output current value of the device under test 3 by the gate drive power supply 11. Therefore, the limited current flows through the test device 3 and the power switch 2 in the test apparatus.

実施の形態１の半導体装置の試験装置では、被測定素子３の破壊時にパワースイッチ２の最大出力電流値に相当する大きさの電流が流れるが、この電流の値は被測定素子３の最大出力電流値よりも高い比較的大きな値である。一方、実施の形態２では、駆動回路４の出力電圧の立ち下がり点の検出後、パワースイッチ２の最大出力電流が被測定素子３の最大出力電流値よりも低い電流に制御される。したがって、被測定素子３が破壊した場合でも、被測定素子３の破壊後に試験装置に流れる短絡電流を小さく抑えることができる。また、試験終了後、パワースイッチ２をオフ状態に切り替えることで、短絡電流を遮断することができる。このように、実施の形態２では、試験装置に流れる電流を、試験時に流れる大きな試験電流と被測定素子３の破壊後に流れる小さな短絡電流とに２段階で制限することができる。   In the semiconductor device testing apparatus according to the first embodiment, a current having a magnitude corresponding to the maximum output current value of the power switch 2 flows when the element to be measured 3 is broken. The value of this current is the maximum output of the element to be measured 3. It is a relatively large value higher than the current value. On the other hand, in the second embodiment, after the falling point of the output voltage of the drive circuit 4 is detected, the maximum output current of the power switch 2 is controlled to be lower than the maximum output current value of the device under test 3. Therefore, even when the device under test 3 is broken, the short-circuit current flowing through the test apparatus after the device under test 3 is broken can be kept small. Moreover, a short circuit current can be interrupted | blocked by switching the power switch 2 to an OFF state after completion | finish of a test. As described above, in the second embodiment, the current flowing through the test apparatus can be limited in two stages to the large test current flowing during the test and the small short-circuit current flowing after the device under test 3 is destroyed.

以上のように、実施の形態２の半導体装置の試験装置によれば、被測定素子３が短絡破壊した時に、パワースイッチ２の最大出力電流値を、被測定素子３の最大出力電流値よりも低い電流に抑えるので、被測定素子３の短絡破壊時における短絡電流をさらに抑制することができる。これにより、従来のような過電流の発生や試験装置の故障を一層確実に防止することができる。また、実施の形態１同様、被測定素子３をオフするタイミングとほぼ同時にパワースイッチ２がオフされるのではないので、被測定素子３には直流電源電圧がそのまま印加される。そのため、被測定素子３に対して正確な短絡破壊耐量試験ができる。   As described above, according to the semiconductor device test apparatus of the second embodiment, the maximum output current value of the power switch 2 is set to be greater than the maximum output current value of the device under test 3 when the device under test 3 is short-circuit broken. Since it suppresses to a low electric current, the short circuit current at the time of the short circuit destruction of the to-be-measured element 3 can further be suppressed. Thereby, it is possible to more reliably prevent the occurrence of overcurrent and the failure of the test apparatus as in the prior art. Further, as in the first embodiment, the power switch 2 is not turned off almost simultaneously with the timing of turning off the device under test 3, so the DC power supply voltage is applied to the device under test 3 as it is. Therefore, an accurate short circuit breakdown tolerance test can be performed on the device under test 3.

（実施の形態３）
図６は本発明の実施の形態３の半導体装置の短絡破壊耐量試験装置のブロック図である。実施の形態３の試験装置は、実施の形態２の試験装置に対してさらにパワースイッチ２のコレクタ・エミッタ間電圧を検出する破壊検出判定回路１５を有する。 (Embodiment 3)
FIG. 6 is a block diagram of a short-circuit breakdown tolerance test apparatus for a semiconductor device according to Embodiment 3 of the present invention. The test apparatus according to the third embodiment further includes a breakdown detection determination circuit 15 that detects the collector-emitter voltage of the power switch 2 with respect to the test apparatus according to the second embodiment.

次に、実施の形態３の試験装置の動作を説明する。なお、実施の形態２と同じ構成要素は、実施の形態２と同様の動作を行う。試験開始時には、被測定素子３は破壊状態ではないので、破壊検出判定回路１５は被測定素子３が破壊されているとは判定せず、パワースイッチ２はオンとなっている。   Next, the operation of the test apparatus according to the third embodiment will be described. The same components as those in the second embodiment perform the same operations as those in the second embodiment. At the start of the test, since the device under test 3 is not in a broken state, the break detection determination circuit 15 does not determine that the device under test 3 is broken, and the power switch 2 is on.

ここで、試験を開始後、被測定素子３が短絡破壊すると、パワースイッチ２のコレクタ・エミッタ間には直流電源１の出力電圧が印加される。過電流検知の閾値は被測定素子３の最大出力電流以下には設定できないので、実施の形態２のようにパワースイッチ２により短絡電流を被測定素子３の破壊時の電流以下に抑制すると、被測定素子３の短絡破壊を電流値により検出することができない。そこで、パワースイッチ２のコレクタ・エミッタ間電圧を破壊検出判定回路１５で検出することで被測定素子３の破壊を容易に検出できる。また、破壊検出判定回路１５の出力によりパワースイッチ２をオフに制御することにより、直流電源１による電圧の印加を遮断することができる。したがって、短絡電流が流れる時間を短縮することができる。   Here, after the test is started, when the device under test 3 is short-circuit broken, the output voltage of the DC power source 1 is applied between the collector and the emitter of the power switch 2. Since the threshold for overcurrent detection cannot be set below the maximum output current of the device under test 3, if the short circuit current is suppressed below the current at the time of destruction of the device under test 3 by the power switch 2 as in the second embodiment, Short-circuit breakdown of the measuring element 3 cannot be detected by the current value. Therefore, by detecting the collector-emitter voltage of the power switch 2 by the breakdown detection determination circuit 15, the breakdown of the element 3 to be measured can be easily detected. Further, by controlling the power switch 2 to be turned off by the output of the breakdown detection determination circuit 15, application of voltage by the DC power source 1 can be cut off. Therefore, the time during which the short-circuit current flows can be shortened.

被測定素子３のコレクタ・エミッタ間電圧は、直流電源１の電圧上昇時、被測定素子３のターンオン時、被測定素子３のターンオフ時、被測定素子３の破壊時の４つのタイミングで変動する。そのため、被測定素子３の破壊検出を被測定素子３のコレクタ・エミッタ間電圧で行うと、検出回路が複雑となる。ここで、パワースイッチ２のコレクタ・エミッタ間電圧は、被測定素子３の破壊後に短絡電流がパワースイッチ２の最大出力電流を瞬間的に超えたタイミングでのみ変動（上昇）する。したがって、パワースイッチ２のコレクタ・エミッタ間電圧の変化に基づき破壊検出をすることによって、検出回路を簡素化することができる。   The collector-emitter voltage of the device under test 3 fluctuates at four timings when the voltage of the DC power supply 1 is increased, when the device under test 3 is turned on, when the device under test 3 is turned off, and when the device under test 3 is destroyed. . For this reason, if the breakdown of the device under test 3 is detected with the collector-emitter voltage of the device under test 3, the detection circuit becomes complicated. Here, the collector-emitter voltage of the power switch 2 fluctuates (rises) only when the short-circuit current instantaneously exceeds the maximum output current of the power switch 2 after the device under test 3 is destroyed. Therefore, the detection circuit can be simplified by detecting the breakdown based on the change in the collector-emitter voltage of the power switch 2.

以上のように、実施の形態３の半導体装置の試験装置によれば、破壊検出判定回路１５によりパワースイッチ２のコレクタ・エミッタ間電圧の立ち上がりを検出することで、被測定素子３の短絡破壊を判定する。そして、コレクタ・エミッタ間電圧の立ち上がりの検出後、直流電源１から供給される電圧をパワースイッチ２で遮断する。これにより、被測定素子３破壊後の電圧印加時間を短縮することができる。したがって、試験装置の故障を一層確実に防止することができる。また、実施の形態１同様、被測定素子３をオフするタイミングとほぼ同時にパワースイッチ２がオフされるのではないので、被測定素子３には直流電源電圧がそのまま印加される。そのため、被測定素子３に対して正確な短絡破壊耐量試験ができる。   As described above, according to the semiconductor device test apparatus of the third embodiment, the breakdown detection determination circuit 15 detects the rise of the collector-emitter voltage of the power switch 2, thereby causing the short-circuit breakdown of the element 3 to be measured. judge. After the rise of the collector-emitter voltage is detected, the voltage supplied from the DC power source 1 is cut off by the power switch 2. Thereby, the voltage application time after destruction of the element 3 to be measured can be shortened. Therefore, failure of the test apparatus can be prevented more reliably. Further, as in the first embodiment, the power switch 2 is not turned off almost simultaneously with the timing of turning off the device under test 3, so the DC power supply voltage is applied to the device under test 3 as it is. Therefore, an accurate short circuit breakdown tolerance test can be performed on the device under test 3.

１ 直流電源、２ パワースイッチ、３ 被測定素子、４ ゲート駆動回路、5 ゲート抵抗、６ 電流センサ、７ 過電流検出器、９ ゲート駆動電源、１０ ゲート抵抗、１１ ゲート駆動電源、１２ ゲート立下り検出器、１３ リレー回路、１４ リレー回路、１５ 破壊検出判定回路   1 DC power supply, 2 power switch, 3 device under test, 4 gate drive circuit, 5 gate resistance, 6 current sensor, 7 overcurrent detector, 9 gate drive power supply, 10 gate resistance, 11 gate drive power supply, 12 gate falling Detector, 13 Relay circuit, 14 Relay circuit, 15 Destruction detection judgment circuit

Claims (4)

半導体装置の短絡破壊耐量の試験装置であって、
試験対象の半導体装置である被測定素子に直流電圧を印加する直流電源と、
被測定素子と直列に接続され、最大出力電流値が被測定素子の最大出力電流値よりも大きいパワースイッチと、
被測定素子の試験時に、パワースイッチがその最大出力電流値の電流を流すことが可能なようにパワースイッチを制御する制御回路と、
を備えたことを特徴とする半導体装置の試験装置。 A test apparatus for short-circuit breakdown resistance of a semiconductor device,
A DC power source for applying a DC voltage to a device under test, which is a semiconductor device to be tested;
A power switch connected in series with the device under test and having a maximum output current value greater than the maximum output current value of the device under test;
A control circuit that controls the power switch so that the power switch can flow the current of the maximum output current value when the device under test is tested;
An apparatus for testing a semiconductor device, comprising: 請求項１に記載の半導体装置の試験装置において、被測定素子のオフ状態への切り替えに同期させてパワースイッチのゲート電圧を切り替える回路をさらに備えたことを特徴とする半導体装置の試験装置。   2. The semiconductor device testing apparatus according to claim 1, further comprising a circuit for switching a gate voltage of the power switch in synchronization with switching of the device under measurement to an OFF state. 請求項２に記載の半導体装置の試験装置において、パワースイッチのコレクタ・エミッタ間電圧を検出する検出回路をさらに備えたことを特徴とする半導体装置の試験装置。   3. The semiconductor device testing apparatus according to claim 2, further comprising a detection circuit for detecting a collector-emitter voltage of the power switch. 請求項３に記載の半導体装置の試験装置において、検出回路によるパワースイッチのコレクタ・エミッタ間電圧の検出結果に基づいて、直流電圧の被測定素子への供給を遮断することを特徴とする半導体装置の試験装置。   4. The semiconductor device testing apparatus according to claim 3, wherein the supply of the DC voltage to the element to be measured is cut off based on the detection result of the collector-emitter voltage of the power switch by the detection circuit. Testing equipment.
JP2010032417A 2010-02-17 2010-02-17 Semiconductor device testing equipment Expired - Fee Related JP5258810B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010032417A JP5258810B2 (en) 2010-02-17 2010-02-17 Semiconductor device testing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010032417A JP5258810B2 (en) 2010-02-17 2010-02-17 Semiconductor device testing equipment

Publications (2)

Publication Number Publication Date
JP2011169681A true JP2011169681A (en) 2011-09-01
JP5258810B2 JP5258810B2 (en) 2013-08-07

Family

ID=44683971

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010032417A Expired - Fee Related JP5258810B2 (en) 2010-02-17 2010-02-17 Semiconductor device testing equipment

Country Status (1)

Country Link
JP (1) JP5258810B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140072431A (en) * 2012-12-04 2014-06-13 한국전자통신연구원 Electronic Device Reliability Measurement System
WO2015198589A1 (en) * 2014-06-26 2015-12-30 株式会社デンソー Circuit and method for inspecting semiconductor device
DE102015108721B4 (en) 2014-06-06 2018-07-12 Mitsubishi Electric Corporation Examination method and examination device for a semiconductor element
CN113295981A (en) * 2021-05-24 2021-08-24 长江存储科技有限责任公司 Time-lapse breakdown testing equipment and method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005345247A (en) * 2004-06-02 2005-12-15 Toyota Motor Corp Method for evaluating semiconductor element
JP2006246675A (en) * 2005-03-07 2006-09-14 Toyota Motor Corp Power supply device
JP2007033042A (en) * 2005-07-22 2007-02-08 Shibasoku:Kk Tester
JP2009019953A (en) * 2007-07-11 2009-01-29 Fuji Electric Device Technology Co Ltd Semiconductor device degradation detecting method
JP2009145302A (en) * 2007-12-18 2009-07-02 Toyota Motor Corp Testing device and its testing method for semiconductor element
JP2010181314A (en) * 2009-02-06 2010-08-19 Fuji Electric Systems Co Ltd Semiconductor-testing device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005345247A (en) * 2004-06-02 2005-12-15 Toyota Motor Corp Method for evaluating semiconductor element
JP2006246675A (en) * 2005-03-07 2006-09-14 Toyota Motor Corp Power supply device
JP2007033042A (en) * 2005-07-22 2007-02-08 Shibasoku:Kk Tester
JP2009019953A (en) * 2007-07-11 2009-01-29 Fuji Electric Device Technology Co Ltd Semiconductor device degradation detecting method
JP2009145302A (en) * 2007-12-18 2009-07-02 Toyota Motor Corp Testing device and its testing method for semiconductor element
JP2010181314A (en) * 2009-02-06 2010-08-19 Fuji Electric Systems Co Ltd Semiconductor-testing device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140072431A (en) * 2012-12-04 2014-06-13 한국전자통신연구원 Electronic Device Reliability Measurement System
KR101928815B1 (en) 2012-12-04 2018-12-13 한국전자통신연구원 Electronic Device Reliability Measurement System
DE102015108721B4 (en) 2014-06-06 2018-07-12 Mitsubishi Electric Corporation Examination method and examination device for a semiconductor element
WO2015198589A1 (en) * 2014-06-26 2015-12-30 株式会社デンソー Circuit and method for inspecting semiconductor device
JP2016008936A (en) * 2014-06-26 2016-01-18 株式会社デンソー Semiconductor element inspection circuit and inspection method
CN113295981A (en) * 2021-05-24 2021-08-24 长江存储科技有限责任公司 Time-lapse breakdown testing equipment and method
CN113295981B (en) * 2021-05-24 2023-10-10 长江存储科技有限责任公司 Time-lapse breakdown testing equipment and method

Also Published As

Publication number Publication date
JP5258810B2 (en) 2013-08-07

Similar Documents

Publication Publication Date Title
JP5547579B2 (en) Test apparatus and test method
TWI436073B (en) Test device for switchgear
CN101512902B (en) Switching element driver, and switching element driving method
US9759763B2 (en) Damage reduction method and apparatus for destructive testing of power semiconductors
CN110291715B (en) Motor driver
KR101477351B1 (en) Protection circuit and gate driving circuit for semiconductor switch device
JP4853470B2 (en) Semiconductor device test apparatus and test method thereof
US9214873B2 (en) Method for operating an electrical power rectifier, as well as an electrical power rectifier
WO2017215335A1 (en) Igbt short-circuit protection circuit and method, igbt driver and igbt circuit
JP2019086295A (en) Reliability test device
JP5258810B2 (en) Semiconductor device testing equipment
US11115019B2 (en) Dynamic short circuit protection
JP6409697B2 (en) Semiconductor device inspection circuit and inspection method
CN106468756B (en) System for testing reverse recovery time of diode
JP2013195291A (en) Voltage change detecting circuit and voltage change detecting method
JP6207265B2 (en) Semiconductor test equipment
JP2016118399A (en) Testing apparatus
US10319822B2 (en) Controlling method of a transistor of type IGBT and associated controlling device
JP2012217087A (en) Load drive device
JP6070003B2 (en) Semiconductor drive device
JP2008301617A (en) Protective device for power converter
JP2009100582A (en) Current limiting device
JP6052417B2 (en) Semiconductor switching device
JP2014048223A (en) Semiconductor element testing device
CN107870280B (en) Method for detecting short circuits in an electric network comprising transistors of the IGBT type and related control device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110928

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20121126

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121204

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130128

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130326

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130423

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160502

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees