JP2011124572A - 高電圧耐久iii族窒化物半導体デバイス - Google Patents
高電圧耐久iii族窒化物半導体デバイス Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 98
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 95
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 95
- 239000010703 silicon Substances 0.000 claims abstract description 95
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000002800 charge carrier Substances 0.000 claims abstract description 15
- 239000012212 insulator Substances 0.000 claims abstract description 15
- 150000004767 nitrides Chemical class 0.000 claims description 69
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 6
- 229910002601 GaN Inorganic materials 0.000 claims description 5
- 230000015556 catabolic process Effects 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
【解決手段】高電圧耐久III族窒化物半導体デバイスは、(100)シリコン層14、該(100)シリコン層14上の絶縁体層18、及び該絶縁体層18上のP型導電性の(111)シリコン層16を有する支持基板を備える、高電子移動度トランジスタ(HEMT)を備える。高電圧耐久HEMTは、P型導電性の(111)シリコン層16上に形成したIII族窒化物半導体本体12であって、HEMTのヘテロ接合を形成する、III族窒化物半導体本体も備える。
【選択図】図2
Description
本出願は、2008年11月26日に出願された、「III−Nitride Wafer and Devices Formed in a III−nitride Wafer」というタイトルの継続中の親出願である、米国特許出願第12/324119号の一部継続出願であり、その利益及び優先権を主張する。継続中の親出願の開示は、参照により本願に完全に組み込まれる。
本明細書において、「III−V族半導体」は、例えば、窒化ガリウム(GaN)、砒化ガリウム(GaAs)、窒化インジウムアルミニウムガリウム(InAlGaN)、窒化インジウムガリウム(InGaN)などのような、これらに限定されない、少なくとも1つのIII族元素と少なくとも1つのV族元素とを含む化合物半導体を意味する。同様に、「III族窒化物」は、例えば、GaN、AlGaN、InN、AlN、InGaN、InAlGaNなどのような、これらに限定されない、窒素と少なくとも1つのIII族元素とを含む化合物半導体を意味する。
12 III族窒化物半導体本体
14 第1のシリコン本体
16 第2のシリコン本体
18 絶縁体本体
20 III族窒化物バッファ層
22 第1のIII族窒化物層
24 第2のIII族窒化物層
26 第1のパワー電極
28 第2のパワー電極
29 ゲート誘電体
30 ゲート
31 ゲート電極
33 ゲート電極
Claims (20)
- 第1のシリコン本体、該第1のシリコン本体上の絶縁体本体、及び該絶縁体本体上の第2のシリコン本体を有する支持基板と、
前記第2のシリコン本体上に形成したIII族窒化物半導体本体であって、多数電荷キャリアの導電型によって特徴付けられるIII族窒化物半導体本体と、を備え、
前記第2のシリコン本体は、前記多数電荷キャリアの導電型とは反対の導電型を有することを特徴とする、高電圧耐久III族窒化物半導体デバイス。 - 前記高電圧耐久III族窒化物半導体デバイスのブレークダウン電圧は、800ボルト超である、請求項1に記載の高電圧耐久III族窒化物半導体デバイス。
- 前記III族窒化物半導体本体は、第1のIII族窒化物層と第2のIII族窒化物層との界面に形成されたヘテロ接合を有する、請求項1に記載の高電圧耐久III族窒化物半導体デバイス。
- 前記第1のIII族窒化物層は、窒化ガリウム(GaN)からなり、且つ前記第2のIII族窒化物層は、窒化アルミニウムガリウム(AlGaN)からなる、請求項3に記載の高電圧耐久III族窒化物半導体デバイス。
- 前記III族窒化物半導体本体は、高電子移動度トランジスタ(HEMT)を備える、請求項1に記載の高電圧耐久III族窒化物半導体デバイス。
- 前記第2のシリコン本体は、P導電型である、請求項1に記載の高電圧耐久III族窒化物半導体デバイス。
- 前記第2のシリコン本体は、(111)シリコンからなる、請求項1に記載の高電圧耐久III族窒化物半導体デバイス。
- 前記第1のシリコン本体は、(100)シリコンからなる、請求項1に記載の高電圧耐久III族窒化物半導体デバイス。
- 前記第1のシリコン本体は、Nドープドシリコン本体である、請求項1に記載の高電圧耐久III族窒化物半導体デバイス。
- 前記第1のシリコン本体は、Pドープドシリコン本体である、請求項1に記載の高電圧耐久III族窒化物半導体デバイス。
- 前記第1のシリコン本体上に形成したシリコン半導体デバイスをさらに備える、請求項1に記載の高電圧耐久III族窒化物半導体デバイス。
- 前記シリコン半導体デバイスは、金属酸化物半導体電界効果型トランジスタ(MOSFET)を備える、請求項11に記載の高電圧耐久III族窒化物半導体デバイス。
- 前記III族窒化物半導体本体は、PMOSデバイスを備える、請求項1に記載の高電圧耐久III族窒化物半導体デバイス。
- 前記第2のシリコン本体は、N導電型である、請求項13に記載の高電圧耐久III族窒化物半導体デバイス。
- 前記III族窒化物半導体本体上に形成した電源電極をさらに備える、請求項1に記載の高電圧耐久III族窒化物半導体デバイス。
- 前記電源電極間に位置するゲートをさらに備える、請求項15に記載の高電圧耐久III族窒化物半導体デバイス。
- 前記ゲートは、ゲート誘電体及びゲート電極を備える、請求項16に記載の高電圧耐久III族窒化物半導体デバイス。
- 前記III族窒化物半導体本体は、前記ゲートの下に、中断された領域を含む2次元電子ガスを有するIII族窒化物へテロ接合を備える、請求項16に記載の高電圧耐久III族窒化物半導体デバイス。
- 高電圧耐久性の高電子移動度トランジスタ(HEMT)であって、
(100)シリコン層、該(100)シリコン層上の絶縁体層、及び該絶縁体層上のP型導電性の(111)シリコン層を有する支持基板と、
前記P導電型の(111)シリコン層上に形成したIII族窒化物半導体本体であって、前記HEMTのヘテロ接合を形成する、III族窒化物半導体本体と、
を備える、高電圧耐久HEMT。 - 前記HEMTのブレークダウン電圧は、800ボルト超である、請求項19に記載の高電圧耐久HEMT。
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US12/653,467 US7999288B2 (en) | 2007-11-26 | 2009-12-14 | High voltage durability III-nitride semiconductor device |
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JP6054620B2 (ja) * | 2012-03-29 | 2016-12-27 | トランスフォーム・ジャパン株式会社 | 化合物半導体装置及びその製造方法 |
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EP2333822A3 (en) | 2011-10-12 |
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EP2333822A2 (en) | 2011-06-15 |
US20140353723A1 (en) | 2014-12-04 |
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