FR3131075B1 - Structure semi-conductrice en nitrure du groupe iii sur silicium sur isolant et son procédé de croissance - Google Patents

Structure semi-conductrice en nitrure du groupe iii sur silicium sur isolant et son procédé de croissance Download PDF

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FR3131075B1
FR3131075B1 FR2113655A FR2113655A FR3131075B1 FR 3131075 B1 FR3131075 B1 FR 3131075B1 FR 2113655 A FR2113655 A FR 2113655A FR 2113655 A FR2113655 A FR 2113655A FR 3131075 B1 FR3131075 B1 FR 3131075B1
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layer
silicon
semiconductor structure
insulation
nitride semiconductor
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FR3131075A1 (fr
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Christelle Veytizou
Ionut Radu
Joff Derluyn
Stefan Degroote
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Soitec Belgium
Soitec SA
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Soitec Belgium
Soitec SA
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Priority to PCT/EP2022/082085 priority patent/WO2023110267A1/fr
Priority to TW111144574A priority patent/TW202341486A/zh
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Abstract

L’invention porte sur une structure semi-conductrice (1) comprenant : − un substrat de Silicium sur Isolant (101) comprenant : o une couche de base de silicium (10) ; o une couche intermédiaire (11) sur ladite couche de base (10) et comprenant : une couche riche en pièges (111) ; et un isolant enterré (121) sur la couche riche en pièges (111) ; et o une couche supérieure de silicium dopé de type n (12) sur ladite couche intermédiaire (11) ; et − un empilement (202) de couches semi-conductrices III-N épitaxiales sur ledit substrat (101) de Silicium sur Isolant, comprenant : o une première couche III-N active (21) sur ladite couche supérieure (12) ; o une deuxième couche III-N active (22) sur ladite première couche III-N active (21) ; avec un Gaz d’Electrons bidimensionnel (200) entre ladite première couche III-N active (21) et ladite deuxième couche III-N active (22). Figure à publier avec l’abrégé : Fig. 3
FR2113655A 2021-12-16 2021-12-16 Structure semi-conductrice en nitrure du groupe iii sur silicium sur isolant et son procédé de croissance Active FR3131075B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR2113655A FR3131075B1 (fr) 2021-12-16 2021-12-16 Structure semi-conductrice en nitrure du groupe iii sur silicium sur isolant et son procédé de croissance
PCT/EP2022/082085 WO2023110267A1 (fr) 2021-12-16 2022-11-16 Structure semi-conductrice au nitrure du groupe iii sur silicium sur isolant et son procédé de croissance
TW111144574A TW202341486A (zh) 2021-12-16 2022-11-22 絕緣體上矽上的ⅲ族氮化物半導體結構及其生長方法

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FR2113655A FR3131075B1 (fr) 2021-12-16 2021-12-16 Structure semi-conductrice en nitrure du groupe iii sur silicium sur isolant et son procédé de croissance
FR2113655 2021-12-16

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FR3131075A1 FR3131075A1 (fr) 2023-06-23
FR3131075B1 true FR3131075B1 (fr) 2023-12-22

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TW (1) TW202341486A (fr)
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Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7999288B2 (en) * 2007-11-26 2011-08-16 International Rectifier Corporation High voltage durability III-nitride semiconductor device
JP5117588B2 (ja) * 2010-09-07 2013-01-16 株式会社東芝 窒化物半導体結晶層の製造方法
JP5903818B2 (ja) * 2011-09-26 2016-04-13 富士通株式会社 化合物半導体装置及びその製造方法
US9721969B2 (en) * 2015-06-30 2017-08-01 Globalfoundries Singapore Pte. Ltd. Creation of wide band gap material for integration to SOI thereof
US10644142B2 (en) * 2017-12-22 2020-05-05 Nxp Usa, Inc. Semiconductor devices with doped regions functioning as enhanced resistivity regions or diffusion barriers, and methods of fabrication therefor

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WO2023110267A1 (fr) 2023-06-22
TW202341486A (zh) 2023-10-16
FR3131075A1 (fr) 2023-06-23

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