JP2011119465A - Heating condition determination method and program for reflow device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a heating condition determination method for reflow device that can determine heating conditions of a multiple-carrying type reflow device configured to carry a plurality of substrates in parallel. <P>SOLUTION: The method for determining the heating conditions of the reflow device capable of simultaneously carrying and heating the substrates of different kinds with a common temperature setting, includes a step (S18) of searching for a first temperature setting meeting temperature profile conditions of a first substrate having a maximum heating characteristic value by simulating a temperature profile of the first substrate when the first substrate is carried at a first carrying speed, a step (S20) of searching for a second carrying speed meeting a temperature profile condition of a second substrate other than the first substrate by simulating a temperature profile when the second substrate is carried with the first temperature setting, and a heating condition determination step (S17) of determining heating conditions including the temperature setting, first carrying speed, and second carrying speed based upon the search results. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a method and program for determining heating conditions in a reflow apparatus by simulation, and more particularly to a heating condition determination method and program in a reflow apparatus in which substrates of different types having different thermal characteristics are transported in parallel.

  The reflow device is a device that heats and cools a substrate (hereinafter referred to as “substrate”) on which an electronic component is placed on a printed wiring board coated with cream solder. The solder applied to the land or the like of the printed wiring board is melted and solidified by the reflow device, and the land and the terminal of the electronic component are joined via the solder.

  For good soldering, it is important to melt the solder sufficiently while preventing oxidation of the solder. Some electronic parts have relatively low heat resistance. Therefore, in the reflow device, the temperature profile that shows the temperature change of the board over time must be appropriately controlled according to the composition component of the flux used for soldering, the composition component of the solder, the heat resistance of the electronic component, etc. There is.

  In order to control the temperature profile of the substrate, the reflow apparatus includes a space in which the temperature can be controlled. The space is roughly divided into a heating zone for heating the substrate and a cooling zone for cooling the substrate, and the heating zone is subdivided into smaller zones. Each of the subdivided zones is controlled at a temperature set by the operator, whereby the temperature environment through which the substrate passes can be finely controlled.

  In addition, the reflow apparatus includes a transport device that transports the substrate so that the substrate passes through each of the zones. The transfer device can control the transfer speed of the substrate so as to transfer the substrate at a speed set by the operator. Thus, since the time required for the substrate to pass through each of the above zones can be controlled, the heating time of the substrate in each temperature environment can be controlled.

  Thus, in the reflow apparatus, the temperature setting of each zone and the heating time in each temperature environment can be controlled. Therefore, the temperature profile suitable for the substrate can be controlled by appropriately determining the heating conditions including the temperature setting and the conveyance speed of each zone of the reflow apparatus.

  As described above, the heating condition includes the temperature setting and the conveyance speed of each zone, and includes a number of factors to be determined. Specifically, the heating zone generally includes a preheating zone that forms a relatively low temperature environment for flux activation, relaxation of thermal shock of the substrate, etc., and a main heating zone for melting solder. The preheating zone and the main heating zone are further subdivided. For example, if the preheating zone is divided into 6 zones and the main heating zone is divided into 2 zones, the temperature setting will include 8 elements. Assuming that the conveyance speed is composed of one element, the heating condition includes nine elements in combination with the temperature setting and the conveyance speed.

  In determining the heating conditions, it is necessary to consider a number of factors such as the composition component of the flux used for soldering, the composition component of the solder, and the heat resistance of the electronic component. Therefore, determination of the heating conditions is difficult even for a skilled engineer, and in order to determine the heating conditions, trials for heating the substrate in a test using a reflow apparatus may be repeated. When the substrate is heated by changing the temperature setting, there is a waiting time until the space in the reflow apparatus converges according to the temperature environment set in each zone. Therefore, repeating trials takes a long time and effort. Therefore, in order to be able to determine the desired heating conditions in a short time without relying on many years of experience and trial and error, there is a reflow apparatus equipped with a calculation mechanism that supports the temperature setting of the reflow apparatus and the determination of the conveyance speed. It has been proposed (see, for example, Patent Document 1).

Japanese Patent Laid-Open No. 3-50790

  Recently, there is a multi-transport type reflow apparatus that transports a plurality of substrates in parallel under the same temperature environment by providing a plurality of transport apparatuses. In the multi-transport type reflow apparatus, a plurality of substrates can be soldered simultaneously, so that the production efficiency per installation area can be improved. Therefore, it is expected that the multi-transport type reflow apparatus will be used more and more widely in the future. However, in the conventional technique, it is assumed that the reflow apparatus transports only one type of substrate and determines the temperature setting and the transport speed for that purpose. It is difficult to apply the conventional method for determining the heating condition of the multi-conveyance reflow apparatus for the following reasons.

  For example, first, the temperature profile of the substrate is not uniform even within the same substrate, and there are a portion where the temperature rise is difficult and a portion where the temperature rise is difficult. Such heating characteristics in the substrate vary depending on the material of the printed wiring board used for the substrate, the type of electronic component, the density of the arranged electronic components, and the like. In the case where there are a plurality of types of substrates, in order to consider the difference in local heating characteristics of each substrate in determining the heating conditions, a technique that is not conventionally required is required.

  In addition, restrictions on the heat resistance of the substrate are often determined by the type of electronic component mounted on the substrate, etc., but in the case of a different type of substrate, the electronic component mounted on the substrate usually differs for each type. . For this reason, restrictions on heat resistance become more complex as the number of types of substrates increases, and it is not clear how the conventional method determines heating conditions in consideration of restrictions on the heat resistance of a plurality of types of substrates.

  Furthermore, the multi-transport type reflow apparatus includes a plurality of transport apparatuses, and by appropriately setting the transport speed of each substrate, a temperature profile suitable for each substrate can be realized even under the same temperature environment. Can do. The method of determining the set temperature and the speeds of a plurality of transfer devices applicable to different types of substrates is not clear in the conventional method.

  Accordingly, an object of the present invention is to provide a heating condition determination method for a reflow apparatus capable of determining a heating condition in a multiple transport type reflow apparatus that transports a plurality of substrates in parallel.

  1st form of the heating condition determination method which concerns on this invention is a method of determining the heating condition in the reflow apparatus which can convey and heat a different kind of board | substrate simultaneously under a common temperature setting, Comprising: Said different kind of board | substrate The first temperature satisfying the temperature profile of the first substrate is simulated by simulating the temperature profile of the first substrate when the first substrate including the maximum heating characteristic value is transferred at the first transfer speed. A first search step for searching for a setting; and a temperature profile of each substrate other than the first substrate is simulated by simulating a temperature profile when each substrate other than the first substrate is transferred under the first temperature setting. A second search step of searching for a transfer speed of each substrate other than the first substrate that satisfies the profile condition; and the first transfer of the first substrate under the first temperature setting. Transported in degrees, and a heating condition determining step of determining a heating condition including a respective substrate other than the first substrate to the contents to be transported at the transportation speed of the respective substrates.

  A second aspect of the heating condition determination method according to the present invention is the heating condition determination method according to the first aspect, wherein the virtual substrate including the maximum and minimum heating characteristic values of the different types of substrates is defined as the first aspect. A third search step of searching for a second temperature setting of the reflow apparatus that satisfies a temperature profile condition of the different types of substrates by simulating a temperature profile of the virtual substrate when transported at a transport speed; In the first search step, the first temperature setting is searched when the second temperature setting cannot be found, and in the heating condition determination step, the second temperature setting is found when the second temperature setting can be found. Under the two temperature settings, the heating condition including the contents of conveying all of the substrates at the first conveying speed is determined.

  A third embodiment of the heating condition determination method according to the present invention is the heating condition determination method according to the second embodiment described above, and is different when the transport speed of each substrate other than the first substrate cannot be found. An informing step for informing that a different type of substrate should be heated by a different reflow apparatus is included.

  A fourth embodiment of the heating condition determining method according to the present invention is the heating condition determining method according to any of the first to third embodiments, wherein a temperature sensor is used as a temperature measurement point for each of the different types of substrates. A preparation step of preparing a test substrate to which the test substrate is attached, and the temperature profile of the test substrate is transferred to the plurality of temperatures while the test substrate prepared in the preparation step is transported by the reflow device having a predetermined temperature setting. A measurement step of actually measuring a temperature profile by obtaining from a sensor, and a heating characteristic value that is an index indicating the difficulty of temperature rise at the temperature measurement point based on the temperature profile measured in the measurement step A calculating step of calculating.

  A fifth aspect of the heating condition determination method according to the present invention is the heating condition determination method according to any of the first to fourth aspects, wherein the first transport speed is calculated based on an allowable production tact. .

  A heating condition determination program according to the present invention is a program for determining a heating condition in a reflow apparatus capable of simultaneously transporting and heating different types of substrates under a common temperature setting, and among the different types of substrates, the maximum The first temperature setting that satisfies the temperature profile condition of the first substrate is searched by simulating the temperature profile of the first substrate when the first substrate including the heating characteristic value is conveyed at the first conveyance speed. The temperature profile condition of each substrate other than the first substrate is satisfied by simulating a temperature profile when each substrate other than the first substrate is transferred under the first search procedure and the first temperature setting. Under a second search procedure for searching for the transport speed of each substrate other than the first substrate, and the first temperature setting, the first substrate is moved at the first transport speed. It fed, to perform a heating condition determining procedure for determining the heating conditions that involve transporting each substrate other than the first substrate at a conveying speed of the respective substrates to the contents to the computer.

  According to the present invention, the first transport speed and the first temperature setting are determined by simulating the first substrate including the maximum heating characteristic value among the different types of substrates, and the first temperature setting is further determined. Under this, each substrate other than the first substrate is simulated to determine the transport speed of each substrate. As a result, in a multi-transport type reflow apparatus that can transport and heat different types of substrates at the same time under a common temperature setting, heating that includes temperature settings that match the temperature profile conditions of each substrate and the transport speed of each substrate It becomes possible to determine the conditions. Therefore, it is possible to reduce the time required for determining the temperature condition in the multi-conveyance type reflow apparatus and reduce labor.

It is a top view which shows the outline of the reflow apparatus with which the heating condition determination method which concerns on one embodiment of this invention is applied. It is a whole flowchart of the heating condition determination method which concerns on one embodiment of this invention. (A) It is a top view of the board | substrate for a 1st test about a 1st board | substrate. (B) It is a side view of the board | substrate for a 1st test about a 1st board | substrate. (A) It is a top view of the board | substrate for a 2nd test about a 2nd board | substrate. (B) It is a side view of the 2nd board | substrate for a test about a 2nd board | substrate. It is a figure which shows an example of the temperature profile of the 1st board | substrate which satisfy | fills the temperature profile conditions requested | required according to the property of solder with the conditions. It is a figure which shows the relationship between a conveyance speed (m / min) and a production tact (sec) when the board | substrate length is set to L and a board | substrate is conveyed sequentially by the board | substrate space | interval of L / 2. It is a flowchart which shows the detail of the heating condition determination process shown in FIG. It is a figure which shows the example of the heating characteristic value of a 1st board | substrate, a 2nd board | substrate, and a virtual substrate. It is a flowchart which shows the detail of the heating condition search process at the time of making conveyance speed constant. It is a flowchart which shows the detail of the heating condition search process at the time of making temperature setting constant. It is a figure which shows the example of the temperature profile of a 1st board | substrate in the case of satisfy | filling the temperature profile conditions of a 1st board | substrate. It is a figure which shows the example of the temperature profile of the 2nd board | substrate when not matching the temperature profile conditions of a 2nd board | substrate. It is a figure which shows the example of the temperature profile of the 2nd board | substrate in the case of satisfy | filling the temperature profile conditions of a 2nd board | substrate. It is a figure which shows the other example of the heating characteristic value of a 1st board | substrate, a 2nd board | substrate, and a virtual substrate.

  The configuration and operation of the reflow apparatus 10 to which the heating condition determination method according to the present invention is applied will be described with reference to the drawings. In the following description, the conveyance direction of the substrate is the x direction, the direction in which the conveyors are juxtaposed is the y direction, and the height direction is the z direction.

  A reflow apparatus 10 shown in FIG. 1 is one of apparatuses provided in a mounting line for manufacturing a component mounting board on which electronic components are mounted by transporting a board. In addition to the reflow device 10, the mounting line includes a printing device, a component mounting device, and the like (not shown), and conveys the printed wiring board in the order of the printing device, the component mounting device, and the reflow device. During conveyance, cream solder is applied to the printed wiring board by the printing device, and the electronic component is placed via the solder by the component mounting device.

  A substrate (hereinafter referred to as “substrate”) on which electronic components are mounted on a printed wiring board coated with cream solder is carried into the reflow apparatus 10. The reflow device 10 melts the solder by heating the substrate, and then solidifies the solder by cooling the substrate. In this way, the electronic component is soldered to the printed wiring board by heating and cooling the substrate with the reflow apparatus 10.

  The electronic components placed on the printed wiring board include a capacitor, a resistor, an IC (Integrated Circuit) package, and the like. Moreover, cream solder is an example of a bonding material for bonding an electronic component to a printed wiring board using a reflow apparatus, and may be other metals.

  The reflow apparatus 10 is an example of a multi-transport type reflow apparatus capable of simultaneously transporting and heating different types of substrates under a common temperature setting, and the outline of the configuration is shown in the plan view of FIG. As shown in FIG. 1, the reflow apparatus 10 includes a first conveyor 12 and a second conveyor 14 arranged in parallel in the y direction, and a furnace body 16 having a hollow through which the first and second conveyors 12 and 14 pass. With. The hollow in the furnace body 16 is divided into a preheating zone 18, a main heating zone 20, and a cooling zone 22 in order in the x direction depending on the internal temperature environment.

  The preheating zone 18 is a zone for activating the flux and mitigating thermal shock of the substrate due to rapid heating. In many cases, a temperature environment lower than the melting point of the solder is formed. The main heating zone 20 is a zone for sufficiently melting the solder, and a temperature environment equal to or higher than the melting point of the solder is formed. The cooling zone 22 is formed with a low temperature environment suitable for solidifying the solder.

  The preheating zone 18 and the main heating zone 20 are further divided into a plurality of heating zones in the x direction. In the embodiment, as shown in FIG. 1, the preheating zone 18 is divided into six preheating zones (PH1 to PH6), and the main heating zone 20 is divided into two main heating zones (REF1 and REF2). Is done. Heating units (not shown) are provided on the upper and lower sides of the inner wall of the furnace body 16 forming each heating zone. The heating unit includes, for example, a heater, a fan, and a temperature sensor, and heats each heating zone so as to have a temperature environment set by an operator under the control of the control device 23. The heating unit may take any form as long as the temperature environment of each heating zone can be controlled.

  The 1st conveyor 12 is an apparatus which conveys the 1st board | substrate 24 so that it may pass through each heating zone in the temperature environment which the operator set. The first conveyor 12 transports the first substrate 24 at the first substrate transport speed (hereinafter referred to as “first transport speed”) V <b> 1 set by the operator under the control of the control device 23. The second conveyor 14 is a device that transports the second substrate 26 so as to pass through each heating zone common to the first conveyor 12 in the temperature environment set by the operator. Under the control of the control device 23, the operator The second substrate 26 is transported at the transport speed for the second substrate (hereinafter referred to as “second transport speed”) V <b> 2 set by the above. The first transport speed V1 and the second transport speed V2 can be independently controlled at different speeds.

  The first substrate 24 and the second substrate 26 are different types of substrates, and the dimensions, thickness and material of the printed wiring board, the type, quantity and arrangement of electronic components mounted on the printed wiring board, etc. It is a different substrate. As a specific example, the first substrate 24 is a substrate on which components are mounted only on the front surface when manufacturing a double-sided mounting substrate, and the second substrate 26 is a component mounted on the back surface of the first substrate 24. It is a substrate.

  The substrates 24 and 26 of different types differ in the difficulty in raising the temperature under the same temperature environment (hereinafter referred to as “heating characteristics”). In the reflow apparatus 10, the substrates 24 and 26 are transported under the same temperature environment. Even under the same temperature environment, the temperature change (temperature profile) of the substrate over time desirable for soldering the substrates 24 and 26. Can be realized. A method for realizing a desired temperature profile of each of the substrates 24 and 26 under the same temperature environment will be described.

  While the first substrate 24 is transported at the first transport speed V1 by the first conveyor 12, the preheating zone 18 from the first preheating zone PH1 to the sixth preheating zone PH6, and the first main heating zone REF1. Through the main heating zone 20 from the second main heating zone REF2 to the second main heating zone REF2. The time required to pass through each of the heating zones PH1 to PH6, REF1, and REF2 is determined by the first transport speed V1. For this reason, the first substrate 24 passes through each heating zone in which the temperature environment is controlled according to the setting, taking a time corresponding to the heating characteristics. Therefore, even when passing through a certain temperature environment, a desired temperature profile can be realized for the first substrate 24 by appropriately determining the first transport speed V1.

  Similarly to the case of the first substrate 24, the second substrate 26 is also desired for the second substrate 26 by appropriately determining the second transport speed V2 even when passing through a certain temperature environment. The temperature profile can be realized.

  As described above, in the reflow apparatus 10, by appropriately determining the temperature settings of the heating zones PH <b> 1 to PH <b> 6, REF <b> 1 and REF <b> 2 of the reflow apparatus 10, the first transport speed V <b> 1, and the second transport speed V <b> 2. A temperature profile corresponding to 24 and 26 can be realized. As a result, the first substrate 24 and the second substrate 26 can be appropriately soldered simultaneously.

  The heating condition determination method according to the present invention is a method for determining a heating condition applicable to the multi-conveyance reflow apparatus 10 as described above. This heating condition includes the temperature setting of each heating zone, the first transport speed V1, and the second transport speed V2. The heating condition determination method according to the present invention is executed by an information processing device (not shown) such as a computer based on information and instructions input by an operator. In the embodiment, the information processing apparatus that executes the heating condition determination method is provided separately from the reflow apparatus 10.

  From here, with reference to FIG. 2, the outline of the heating condition determination method which concerns on this invention is demonstrated. FIG. 2 is an overall flowchart of the heating condition determination method according to the present invention.

  The information processing apparatus acquires information (heating characteristic information) indicating the heating characteristic values of the first substrate 24 and the second substrate 26 (S1).

  The heating characteristic value is an index indicating the above-mentioned local heating characteristics of the substrate, that is, an index indicating the difficulty in locally raising the temperature of the substrate. The heating characteristic value is calculated for each temperature measurement point of each of the first and second substrates 24 and 26, and the test substrates 28 and 30 (see FIGS. 3 and 4) in which a thermocouple is attached to each temperature measurement point. It is calculated based on the temperature change at each temperature measurement point that is actually measured by heating with the reflow device 10.

  Here, the details of the method of calculating the heating characteristic values of the substrates 24 and 26 will be described with an example.

  First, the test substrates 28 and 30 are prepared for the substrates 24 and 26 to be heated and cooled by the reflow apparatus 10 (preparation step). 3A and 3B are a plan view and a side view of the first test substrate 28 which is the test substrate of the first substrate 24, respectively. As shown in the figure, a plurality of thermocouples are attached to the first test substrate 28.

  The location (temperature measurement point) where the thermocouple is attached is appropriately set at a location where a characteristic temperature profile is expected to be exhibited on the substrate, a location on the substrate that requires special attention to the temperature profile, or the like. The temperature measurement point is determined based on the numerical calculation result for calculating the distribution of the heating characteristic value in the substrate, the experience of the engineer, and the like.

  In the first test substrate 28 shown in FIG. 3, three temperature measurement points TP1a to TP1c are set. The first temperature measurement point TP <b> 1 a is set in the vicinity of the end of the first substrate 24 as a place where the temperature is predicted to be most easily raised in the first substrate 24. The second temperature measurement point TP <b> 1 b is set to a lead portion of a component having a large dimension placed on the first substrate 24 as a portion that is predicted to be most difficult to raise the temperature in the first substrate 24. The third temperature measurement point TP <b> 1 c is set as a part having a low heat-resistant temperature among the parts placed on the first substrate 24 as a part of the first substrate 24 that requires special attention to the temperature profile.

  4A and 4B are a plan view and a side view of the second test substrate 30 which is the test substrate of the second substrate 26, respectively. As shown in the figure, for the second substrate 26 as well, as with the first substrate 24, the first temperature measurement point TP2a is set at a position where the temperature is expected to rise most easily in the second substrate 26. The second temperature measurement point TP2b is set at a place where the temperature is most unlikely to rise in the second substrate 26, and the third temperature measurement point TP2c is set at a component having a low heat resistance temperature.

ｍ：加熱特性値
Ｔ_ａ：加熱ゾーンにおける温度設定
Ｔ_int：加熱ゾーンにおける温度測定点の初期温度
Ｔ_ｓ：到達温度
t：加熱ゾーンでの加熱時間 When the first test substrate 28 and the second test substrate 30 are prepared, the test substrates 28 and 30 are actually transported by the reflow apparatus 10 and the temperature profiles of the test substrates 28 and 30 are measured. (Measurement step). The heating conditions of the reflow apparatus 10 when the test substrates 28 and 30 are transported may be set as appropriate by the operator. A heating characteristic value is calculated for each temperature measurement point TP1a to TP1c and TP2a to TP2c by calculating the actually measured temperature profile according to the following equation (1) (calculation step).

m: heating characteristic value T _a : temperature setting in the heating zone T _int : initial temperature of the temperature measurement point in the heating zone T _s : ultimate temperature
t: Heating time in the heating zone

  The applicants of the present application have registered and registered a patent right for an invention related to a thermal analysis method using the heating characteristic value (see Japanese Patent No. 4226855). This is a proposed technique.

  Thus, in the embodiment, the heating characteristic value of the first substrate 24 is a heating characteristic value calculated for each temperature measurement point TP1a to TP1c. The heating characteristic value of the second substrate 26 is a heating characteristic value calculated for each temperature measurement point TP2a to TP2c.

  In the heating characteristic information acquisition process (S1), the heating characteristic information may be acquired by the information processing apparatus itself calculating based on the measurement results of the test substrates 28 and 30 as shown in FIG. Alternatively, the thermal characteristic value information calculated by another information processing device may be acquired by an operator based on the measurement results of the test substrates 28 and 30 or by simulation analysis.

  Next, the information processing apparatus acquires information (temperature profile condition information) indicating the temperature profile conditions of the first and second substrates 24 and 26 (S2).

  The temperature profile condition is a condition for realizing a temperature profile that allows suitable solder bonding without damaging the substrate. The temperature profile condition includes a condition required depending on the property of the solder. The temperature profile condition also includes a condition necessary for determining one temperature setting including a large number of elements according to the number of subdivided heating zones.

  As examples of conditions required according to the properties of the solder, in the preheating zone 18, (A1) the temperature at the place where the temperature rises most easily is not more than the preheating maximum temperature at the end of the preheating, and (A2) the highest temperature rise. It can be mentioned that the time at which the temperature at the location where it is easy to perform becomes the preheating high temperature region is less than the preheating restriction time. As an example of the same condition, in the main heating zone, (B1) the temperature of the place where the temperature is most likely to rise is below the main heating maximum temperature, and (B2) the solder melting time can be secured in the place where the temperature is most difficult to rise. Including.

  A specific example of conditions required according to the properties of the solder is shown in FIG. FIG. 5 shows an example of the temperature profile of the first substrate 24 that satisfies the temperature profile conditions required according to the properties of the solder, the horizontal axis is the elapsed time (or passing zone), and the vertical axis is Indicates temperature. In the example shown in FIG. 5, the preheating maximum temperature is 180 ° C., the preheating high temperature region is 150 ° C. to 180 ° C., the preheating restriction time is 120 seconds, the main heating maximum temperature is 240 ° C., and the solder melting time is 220 ° C. to 240 ° C. The time is 40 seconds.

  In addition, as an example of the conditions necessary for determining one temperature setting, in the preheating zone 18, (A3) at the end of the preheating at the place where the temperature rises most easily and the place where the temperature rise is most difficult (A4) Each of the temperature settings of the first to sixth preheating zones PH1 to PH6 is a value close to the preheating maximum temperature (° C.), and (A5) the first to first preheating zones PH1 to PH6. For example, the dispersion of the temperature setting in the six preheating zones PH1 to PH6 is smaller than the threshold value.

Returning to FIG. 2, the information processing apparatus acquires information (minimum conveyance speed information) indicating the minimum conveyance speed V _min (S <b> 3).

The lowest conveyance speed _Vmin is the lowest of the first and second conveyance speeds V1 and V2 that can be tolerated. An example of a method for calculating the minimum conveyance speed _Vmin will be described with reference to FIG.

FIG. 6 shows the relationship between the transport speed (m / min) and the production tact (sec) when the substrate length in the transport direction is L and the substrates are transported sequentially at a substrate interval of L / 2. Assuming that the length L of the substrate to be produced is 200 (mm) and the distance between the substrates at the time of conveyance is 100 (mm), the relationship between the conveyance speed of the substrate and the production tact is marked with a triangle in FIG. Follow the line. When the target production tact is determined to be, for example, 25 (sec), the conveyance minimum speed _Vmin is calculated as the conveyance speed corresponding to the target production tact in the broken line marked with a triangle. Thus, the minimum conveyance speed _Vmin can be calculated by determining the substrate length, the substrate interval, and the target production tact.

  In the acquisition process (S3) of the minimum conveyance speed information, the minimum conveyance speed information may be acquired by the information processing apparatus itself calculating the minimum conveyance speed, or may be acquired by an operator input or the like. Good.

  Finally, the information processing apparatus uses the heating characteristic information, the temperature profile condition information, and the minimum conveyance speed information acquired in each of the previously executed processes (S1 to S3) to determine the heating condition. A condition determination process is executed (S4).

  In the heating condition determination process (S4), the heating characteristic value included in the information acquired in the heating characteristic information acquisition process (S1) and the minimum conveyance speed included in the information acquired in the acquisition process (S3) of the minimum conveyance speed information. Are used to simulate the temperature profile of the substrate when the first and second substrates 24 and 26 are heated by the reflow apparatus 10. By repeating the simulation with the heating condition changed, a heating condition that matches the temperature profile condition indicated by the information acquired in the temperature profile condition acquisition process (S2) is searched. As a result of the search, when a heating condition (compatible heating condition) that matches the temperature profile condition can be found, the suitable heating condition is determined as a heating condition to be applied to the first and second substrates 24 and 26. Information indicating the heating condition is output.

  An outline of the heating condition determination process (S4) will be described with reference to FIG. FIG. 7 is a flowchart showing details of the heating condition determination process (S4). Since details of FIG. 7 will be described later, an outline of the heating condition determination process (S4) characteristic of the present invention will be described here.

In the heating condition determination process (S4), first, the heating condition is searched for the virtual substrate with the first transport speed V1 and the second transport speed V2 being equal speeds (S11, corresponding to the third search step). In the search process (S11), as the first transfer rate V1 is the second transport speed V2 are equal conveyance minimum speed _{V min,} conforms temperature set to a temperature profile conditions of the first substrate 24 and second substrate 26 Explored.

Here, the “virtual substrate” refers to a virtual substrate having a heating characteristic value including the heating characteristic values of the substrates 24 and 26 to be transported. An example of the heating characteristics of the virtual substrates of the first and second substrates 24 and 26 is shown in FIG. As shown in the figure, the maximum value TP3 _max of the heating characteristic value of the virtual substrate is the larger of the maximum value TP1b of the heating characteristic value of the first substrate 24 and the maximum value TP2b of the heating characteristic value of the second substrate 26. It is equal to the maximum value TP1b of the heating characteristic value of a certain first substrate 24. Further, the minimum value TP3 _min of the heating characteristic value of the virtual substrate is the smaller one of the minimum value TP1a of the heating characteristic value of the first substrate 24 and the minimum value TP2a of the heating characteristic value of the second substrate 26. Is equal to the minimum value TP2a of the heating characteristic value.

Note that the maximum value TP3 _max of the heating characteristic value of the virtual substrate may be equal to or greater than the maximum value TP1b among the maximum value of the heating characteristic value of each substrate to be transported. Further, the minimum value TP3 _min of the heating characteristic value of the virtual substrate may be equal to or smaller than the minimum value TP2a among the minimum values of the heating characteristic value of each substrate to be transported.

When a suitable heating condition for the virtual substrate can be found as the lowest conveyance speed _Vmin (Yes in S12), preferably, the temperature setting suitable for the temperature profile condition is searched while increasing the conveyance speed (S14) ( S15). Productivity can be improved by finding heating conditions at the fastest possible conveyance speed.

In this manner, when the suitable heating condition can be found for the virtual substrate (Yes in S12 or Yes in S16), the suitable heating condition (the heating condition held in S13) is set to the first substrate 24 and the second substrate. The heating condition to be applied to the substrate 26 is determined (S17, corresponding to the heating condition determination step). In this case, the first transport speed V1 and the second transport speed V2 are equal. Further, the speed (V1 = V2) is a transport minimum speed _Vmin or a speed higher than that.

When the suitable heating condition with the transfer minimum speed V _min cannot be found for the virtual substrate (No in S12), the maximum heating characteristic value among the heating characteristic values of the first substrate 24 and the second substrate 26 is included. The heating condition is searched for the first substrate 24 (S18, corresponding to the first searching step). In the search process (S18), the first transport speed V1 as conveying the minimum speed _{V min,} the temperature setting is searched conform to a temperature profile conditions of the first substrate 24.

By slower conveying speed of the conveying lowest speed V _min the first transport speed V1, it is possible to find a low temperature setting among the applied temperature set at a temperature profile conditions of the first substrate 24.

  This temperature setting is also applied to the second substrate 26 due to the configuration of the reflow apparatus 10 described above. Since the first substrate 24 includes the maximum heating characteristic value of both the substrates 24 and 26, the second substrate 26 can be said to be a substrate whose temperature rises more easily than the first substrate 24. Therefore, when the suitable heating condition cannot be found in the virtual substrate (No in S12), the second transport speed V2 needs to be faster than the first transport speed V1, but the upper limit of the second transport speed V2 is It is limited by the transfer capability of the second conveyor 14 that transfers the second substrate 26.

  Of the temperature settings that satisfy the temperature profile conditions of the first substrate 24, first, the temperature setting of the low temperature is first found, so that the second transport speed V2 that satisfies the temperature profile conditions of the first substrate 24 and the second substrate 26 is as low as possible. The second transport speed V2 can be made lower than the upper limit.

  Therefore, by first finding a low temperature setting that satisfies the temperature profile condition of the first substrate 24, the heating conditions that allow the first substrate 24 and the second substrate 26 to be heated at the same time under the performance or specification limitations of the reflow apparatus 10. It will be easier to find out.

As described above, as a result of searching for the heating condition for the first substrate 24 (S18), when a temperature setting that satisfies the temperature profile condition of the first substrate 24 is found (Yes in S19), Thus, the second transport speed V2 that satisfies the temperature profile condition of the second substrate 26 is searched (S20, corresponding to the second search step). If the second transport speed V2 that satisfies the temperature profile condition of the second substrate 26 is found as a result of the search for the second transport speed V2 (Yes in S21), the second transport speed V2 found by the search process (S20). If, it is determined that the first conveying speed V1 is conveyed minimum speed _{V min,} the heating conditions including temperature settings and found by the search processing of the first substrate 24 (S18) the content (S17).

  Finally, heating condition information indicating the determined heating condition is output (S23). Thereby, a heating condition determination process (S4 of FIG. 2) is complete | finished.

  The heating condition determination method may include a process (notification step) of notifying the operator whether or not the first and second substrates 24 and 26 can be heated by the reflow apparatus 10 based on the output heating condition information. Good. Specifically, in this notification process, the information processing device can control and heat, for example, notification means including one or more monitors, speakers, and the like connected to the device based on the output heating condition information. In such a case, an appropriate heating condition is presented to the operator, and if the heating cannot be performed, the operator is notified accordingly.

  The heating condition determination process (S4 in FIG. 2) included in the heating condition determination method according to the present invention can be executed by the series of processes described so far, and details of each process, particularly a search process (S11, S15, FIG. The details of S18 and S20) may be any method as long as they do not contradict the gist of the present invention described so far.

  One detailed example of the heating condition determination process (S4 in FIG. 2) will now be described with reference to FIGS. 9 and 10 in addition to FIG. FIG. 9 is a flowchart showing details of the heating condition search process (S12, S15, and S18 in FIG. 7) when the conveyance speed is constant. FIG. 10 is a flowchart showing details of the heating condition search process (S20 in FIG. 7) when the temperature setting is constant.

The information processing apparatus in the heating condition determining process (S4 in FIG. 2), first, per every virtual substrate, the conveying speed of the conveying minimum speed V _min, conforming heating conditions to a temperature profile conditions of the first substrate 24 and second substrate 26 Is searched (S11).

  In the virtual substrate heating condition search process (S11), specifically, a temperature setting that matches the temperature profile conditions of the first substrate 24 and the second substrate 26 is searched with a constant transfer speed. An example of the details of the virtual substrate heating condition search process (S11) will be described with reference to the flowchart of FIG.

The information processing apparatus first obtains the initial conditions of a predetermined temperature setting (S31), to simulate the temperature profile of the virtual substrate using the obtained the temperature setting and the conveyance minimum speed V _min (S32 ). After the simulation (S32), the information processing apparatus determines whether the simulated result satisfies the temperature profile conditions of the first substrate 24 and the second substrate 26 (S33).

  When it is determined that the temperature profile condition is not satisfied (No in S33), the information processing apparatus further determines whether or not the temperature setting can be changed (S34).

  Whether or not the temperature setting can be changed is determined based on, for example, the maximum temperature and the minimum temperature of each heating zone that can be set in the reflow apparatus 10. When the temperature setting is changed, if the temperature setting of each heating zone is equal to or higher than the minimum temperature and equal to or lower than the maximum temperature, it is determined that the temperature setting can be changed (Yes in S34). When a temperature setting that is higher or lower than the lowest temperature is included, it is determined that the temperature setting cannot be changed (No in S34).

  When it is determined that the temperature setting can be changed (Yes in S34), the information processing apparatus changes the temperature setting (S35) and executes the simulation (S32) again.

When it is determined that the simulated result satisfies the temperature profile conditions of the first substrate 24 and the second substrate 26 (Yes in S33), the information processing apparatus outputs information indicating the heating condition as search result information. (S36). Here the heating condition indicated by the information output includes a temperature setting using the simulation (S32) which was based of the determination, to the first transport speed V1 and the second conveying speed V2 and the conveying minimum speed V _min including.

  When it is determined that the temperature setting cannot be changed (No in S34), the information processing apparatus outputs information indicating that the heating condition of the virtual substrate cannot be determined as search result information (S36).

  Thereby, the heating condition search process (S11) of the virtual substrate is completed. From here, it returns to FIG. 7 and the continuation of the detail of heating condition determination processing (S4 of FIG. 2) is demonstrated.

  The information processing apparatus determines whether there is a suitable heating condition (S12). Specifically, when the search result information output in the virtual substrate heating condition search process (S11) is information indicating the heating condition, the information processing apparatus determines that there is an appropriate heating condition (Yes in S12). . On the other hand, when the search result information is information indicating that the heating condition cannot be determined, the information processing apparatus determines that there is no suitable heating condition (No in S12).

  When it is determined that there is a suitable heating condition (Yes in S12), the information processing apparatus holds information indicating that the search result information indicates the heating condition in a storage unit included in the information processing apparatus (S13). Subsequently, the information processing apparatus changes the conveyance speed to a higher speed (S14), and searches for the heating condition for the virtual substrate using the changed conveyance speed (S15). This heating condition search process (S15) is the same as the heating condition search process (S11). The heating condition indicated by the information output here includes the temperature setting and the first transport speed V1 used in the simulation (S32) on which the determination is based.

  Further, the information processing apparatus determines whether there is an appropriate heating condition (S16). The details of the adaptive heating condition determination process (S16) are the same as the adaptive heating condition determination process (S12). When it is determined that there is a suitable heating condition (Yes in S16), the information processing apparatus repeats each of the above processes (S13 to S16). When it is determined that there is no suitable heating condition (No in S16), the information processing apparatus sets the heating condition held in the heating condition holding process (S13) as the heating condition to be applied to the first substrate 24 and the second substrate 26. Determine (S17).

When it is determined that there is no suitable heating condition (No in S12), the information processing apparatus sets the conveyance speed to the lowest conveyance speed _Vmin for the first substrate 24 and conforms to the temperature profile condition of the first substrate 24. A condition is searched (S18). The heating condition search process (S18) for the first substrate 24 is a process for searching for a heating condition given a transport speed in the same manner as the heating condition search process (S11) for the virtual substrate. Each process (S31 to S36) is performed. The target is changed from the virtual board to the first board 24. The heating condition indicated by the information output here includes a temperature setting using the simulation (S32) which was based of the determination, that the first conveying speed V1 and the conveying minimum speed V _min.

  After the heating condition search process (S18) for the first substrate 24, the information processing apparatus determines whether there is an appropriate heating condition (S19). The details of the adaptive heating condition determination process (S19) are the same as the adaptive heating condition determination process (S12). When it is determined that there is a suitable heating condition (Yes in S19), the information processing apparatus uses the temperature setting found in the heating condition search process (S18) of the first substrate 24 to find the second substrate 26. A heating condition that matches the temperature profile condition of the second substrate 26 is searched (S20).

  In the heating condition search process (S20) of the second substrate 26, specifically, the temperature setting that matches the temperature profile condition of the second substrate 26 is searched while keeping the temperature setting constant. An example of details of the heating condition search process (S20) of the second substrate 26 will be described with reference to the flowchart of FIG.

First, the information processing apparatus acquires an initial condition of a predetermined second transport speed V2 (S41). The initial condition of the second transport speed V2 is, for example, the transport minimum speed V _min .

  The information processing apparatus simulates the temperature profile of the second substrate 26 using the acquired second transport speed V2 and the temperature setting found in the heating condition search process (S18) of the first substrate ( S42).

  After the simulation (S42), the information processing apparatus determines whether the simulated result satisfies the temperature profile condition of the second substrate 26 (S43).

  When it is determined that the temperature profile condition is not satisfied (No in S43), the information processing apparatus determines whether the second transport speed V2 can be changed at a higher speed, for example (S44).

Whether or not the second transport speed V2 can be changed is determined based on the range of the second transport speed V2 that can be set in the reflow device 10, for example. When the initial condition of the second transport speed V2 is the transport minimum speed V _min and the second transport speed V2 is simulated at a high speed, the maximum speed of the second transport speed V2 that can be set is a reference. When the second transport speed V2 for simulation is changed to a high speed and the second transport speed V2 is equal to or lower than the maximum speed, it is determined that the second transport speed V2 can be changed (Yes in S44). Further, when the second transport speed V2 is faster than the maximum speed, it is determined that the second transport speed V2 cannot be changed (No in S44).

  When it is determined that the second conveyance speed V2 can be changed (Yes in S44), the information processing apparatus changes the second conveyance speed V2 at, for example, a high speed (S45), and executes the simulation (S42) again.

  When it is determined that the simulated result satisfies the temperature profile condition of the second substrate 26 (Yes in S43), the information processing apparatus outputs information indicating the heating condition as search result information (S46). The heating condition indicated by the information output here includes the temperature setting and the second transport speed V2 used in the simulation (S42) on which the determination is based.

  When it is determined that the second transport speed V2 cannot be changed (No in S44), the information processing apparatus outputs information indicating that the heating condition of the second substrate 26 cannot be determined as search result information (S46). .

  Thereby, the heating condition search process (S20) of the second substrate 26 is completed. From here, it returns to FIG. 7 and the continuation of the detail of heating condition determination processing (S4 of FIG. 2) is demonstrated.

  The information processing apparatus determines whether there is a suitable heating condition (S21). The details of the adaptive heating condition determination process (S21) are the same as the adaptive heating condition determination process (S12).

When it is determined that there is a suitable heating condition (Yes in S21), the information processing apparatus sets the temperature setting output as the search result in the heating condition search process (S18) of the first substrate 24, and the first transport speed V1. Is set to the minimum transfer speed V _min and the heating condition including the second transfer speed V2 output as the search result in the heating condition search process (S20) of the second substrate 26 is determined (S17).

  Further, when it is determined that there is no suitable heating condition (No in S19 or No in S21) in the determination process (S19 or S21) for the presence or absence of the suitable heating condition, the information processing apparatus determines that there is no suitable heating condition. (S22). Finally, the information processing device outputs the heating information determined in the heating condition determination process (S17) or the information indicating that there is no suitable heating condition determined in the determination process (S22) as the heating condition information (S23). ), The process is terminated.

  As described above, according to the embodiment, the adaptive heating condition of the virtual substrate having the heating characteristic value including the heating characteristic value of the first and second substrates 24 and 26 of different types is searched. Accordingly, it is possible to determine a heating condition for appropriately heating the first and second substrates 24 and 26 simultaneously in the multi-transport type reflow apparatus 10.

  Further, in the embodiment, when the suitable heating condition for the virtual substrate cannot be found, the suitable heating condition is searched for the first substrate 24 including the maximum heating characteristic value at the first conveyance speed as low as possible. . Thereby, a low temperature setting can be found. Since the first substrate 24 includes the maximum heating characteristic value, the temperature of the second substrate 26 is easier to raise than that of the first substrate 24. Therefore, it is possible to search for an appropriate heating condition for the second substrate 26 by making the second transport speed faster than the first transport speed.

  Here, an example of the temperature profile of the substrate simulated according to the heating condition determined by the heating condition determination method described in the embodiment is shown in FIGS. A substrate having a thickness of 3 mm was used as the first substrate 24 having a large heating characteristic value, and a substrate having a thickness of 0.9 mm was used as the second substrate 26 having a large heating characteristic value. The reflow apparatus has five preheating zones PH1 to PH5 and two main heating zones REF1 to REF2.

  The temperature profile conditions are (A1) to (A5) and (B1) to (B2) described above, and are common to both substrates 24 and 26. The preheating maximum temperature is 180 ° C and the preheating high temperature region is 150 ° C. The preheating restriction time was 120 seconds, the main heating maximum temperature was 240 ° C., and the solder melting time was in the range of 220 ° C. to 240 ° C. for 40 seconds.

  FIG. 11 shows an example of the temperature profile of the first substrate 24. In the simulation, the temperature of the first preheating zone PH1 is 170 degrees, the temperature of the second to fifth preheating zones PH2 to 5 is 180 degrees, the temperature of the first main heating zone REF1 is 255 degrees, and the temperature of the second main heating zone REF2 The temperature was 240 degrees and the first transport speed V1 was 0.60 m / min. The temperature profile of the first substrate 24 shown in the figure satisfies the above temperature profile condition.

  Therefore, FIG. 12 shows the result of simulating the second substrate 26 with the same temperature setting and the same transport speed (V2 = V1 = 0.60 m / min). In the temperature profile of the second substrate 26 shown in the figure, the time for the preheating high temperature region 150 ° C. to 180 ° C. in the preheating is about 170 seconds, which exceeds the preheating restriction time 120 seconds. Further, in the main heating, the maximum temperature rises to nearly 250 degrees, and exceeds the main heating maximum temperature 240 ° C. Therefore, the temperature profile condition cannot be satisfied at the same temperature setting and the same transport speed.

  Next, FIG. 13 shows the result of simulation with the second temperature V2 of 1.04 m / min and the same temperature setting. The temperature profile of the second substrate 26 shown in the figure satisfies the above temperature profile condition. As described above, in the second substrate 26 that is more likely to be heated than the first substrate 24, it is possible to find a suitable heating condition for the second substrate 26 by making the second transport speed faster than the first transport speed.

  Therefore, it is possible to efficiently determine the heating conditions for appropriately heating the first and second substrates 24 and 26 simultaneously in the multi-transport type reflow apparatus 10.

  The heating characteristic value is acquired by heating the first and second test substrates 28 and 30 with the reflow apparatus 10, and the heating condition can be determined based on the acquired heating characteristic value. Therefore, the number of times of actually heating the substrate to determine the heating condition can be reduced as compared with the conventional case, and the time required for determining the heating condition can be reduced and labor can be reduced.

Further, in the search for suitable heating conditions for the virtual substrate and the first substrate, the lowest transfer speed V _min is used, and the lowest transfer speed V _min is determined in consideration of, for example, the target production tact. In that case, the heating condition determined by the heating condition determination method of the embodiment takes into consideration productivity. For this reason, it is possible to determine the heating conditions while ensuring a certain or higher production efficiency.

  Although one embodiment according to the present invention has been described above, the present invention is not limited to this embodiment.

  For example, in the embodiment, the case where the temperature of the first substrate 24 is more difficult to raise than the second substrate 26 as an example has been described. That is, the maximum value of the heating characteristic value of the first substrate 24 is the maximum heating characteristic value through both the substrates 24 and 26, while the minimum value of the heating characteristic value of the first substrate 24 is through the both substrates 24 and 26. It is not the minimum heating characteristic value but is larger than the minimum heating characteristic value of the second substrate 26.

  However, in the actual substrate, as shown in FIG. 14, the maximum value TP1b and the minimum value TP1a of the heating characteristic value of the first substrate 24 become maximum and minimum through both the first and second substrates 24 and 26. In some cases. As described above, when the first substrate 24 includes the heating characteristic value of the second substrate 26, the heating characteristic value of the virtual substrate is the same as the heating characteristic value of the first substrate 24 as shown in FIG. The temperature profile condition of the virtual substrate and the temperature profile condition of the first substrate 24 may be different. Also in this case, the heating condition which can heat the 1st and 2nd board | substrates 24 and 26 simultaneously in the multiple conveyance type reflow apparatus 10 can be determined by the heating condition determination method demonstrated in embodiment.

For example, in the embodiment, an example has been described in which the reflow device 10 includes two transport devices and transports two types of substrates simultaneously. However, the heating condition determination method according to the present invention includes three or more transport devices. Thus, the present invention can also be applied to a case where different types of substrates are transferred for each transfer device. In this case, the virtual substrate may be a virtual substrate having a heating characteristic value including the heating characteristic value of the substrate to be transferred, as in the embodiment. Even in the case where there is no suitable heating condition for the virtual substrate, as in the embodiment, first, for a substrate including the maximum heating characteristic value, the temperature suitable for the temperature profile condition of the substrate with the conveyance speed as the minimum conveyance speed V _min The setting is searched. When such a temperature setting can be found by the search, a search process for a heating condition in which the temperature setting in the embodiment is constant is executed for each of the other substrates. The order of the substrates on which the search processing is performed may be arbitrary, but the search processing is preferably performed from the substrate including the minimum heating characteristic value. If the substrate transfer speed including the minimum heating characteristic value can be found under a certain temperature setting determined for the substrate including the maximum heating characteristic value, the remaining substrate is also subjected to the respective temperature profile conditions. This is because there is a high possibility that a suitable transport speed can be found, and wasteful calculation processing can be reduced. In this way, the temperature setting and the transport speed of each substrate when three or more types of substrates are transported simultaneously are determined.

  For example, in the embodiment, the information processing apparatus that executes the heating information determination method according to the present invention is provided separately from the reflow apparatus 10, but the information processing apparatus may be provided in the reflow apparatus 10. For example, you may incorporate in the control apparatus 23 with which the reflow apparatus 10 is provided.

  For example, the present invention can be realized not only as a heating condition determination method but also as a program that causes a computer to execute each process included in the method as each procedure. Moreover, this invention can also be implement | achieved as a heating condition determination apparatus provided with the means which exhibits the function to perform each process included in the heating condition determination method.

  For example, the heating characteristic value is defined as an index indicating the difficulty in raising the temperature under a specific temperature environment, but this value is an index indicating the ease of raising the temperature under a specific temperature environment, a specific temperature It can be replaced by appropriately converting an index or the like indicating the difficulty or ease of temperature drop in a temperature environment. Each of these substitutable indicators may be appropriately selected and used, and the definition of the heating characteristic value is not intended to exclude the case where these substitutable indicators are used from the present invention.

  INDUSTRIAL APPLICABILITY The present invention can be used to determine heating conditions in a multi-transport reflow apparatus that transports substrates having different thermal characteristics simultaneously.

DESCRIPTION OF SYMBOLS 10 Reflow apparatus 12 1st conveyor 14 2nd conveyor 16 Furnace 18 Preheating zone 20 Main heating zone 22 Cooling zone 23 Control apparatus 24 1st board | substrate 26 2nd board | substrate 28 1st test board 30 2nd test board | substrate

Claims (6)

A method for determining heating conditions in a reflow apparatus capable of simultaneously transporting and heating different types of substrates under a common temperature setting,
The temperature profile condition of the first substrate is simulated by simulating the temperature profile of the first substrate when the first substrate including the maximum heating characteristic value among the different types of substrates is transported at the first transport speed. A first search step for searching for a first temperature setting that satisfies:
By simulating a temperature profile when each substrate other than the first substrate is transferred under the first temperature setting, a temperature profile other than the first substrate that satisfies a temperature profile condition of each substrate other than the first substrate is simulated. A second search step for searching for the conveyance speed of each substrate;
Under the first temperature setting, a heating condition including contents of transporting the first substrate at the first transport speed and transporting each substrate other than the first substrate at the transport speed of each substrate is determined. A heating condition determining method for a reflow apparatus, comprising: a heating condition determining step. By simulating the temperature profile of the virtual substrate when the virtual substrate including the maximum and minimum heating characteristic values of the different types of substrates is transported at the first transport speed, the temperature profile conditions of the different types of substrates A third search step for searching for a second temperature setting of the reflow device satisfying
In the first search step, when the second temperature setting cannot be found, the first temperature setting is searched,
In the heating condition determining step,
When the second temperature setting can be found, the heating condition including the contents of transporting all of the substrates at the first transport speed is determined under the second temperature setting. The heating condition determination method for the reflow apparatus according to claim 1. The notification step of notifying that the different types of substrates should be heated by different reflow devices when the transport speed of each substrate other than the first substrate cannot be found is included. For determining the heating conditions of the reflow apparatus. For each of the different types of substrates, a preparation step of preparing a test substrate with a temperature sensor attached to a temperature measurement point;
The temperature profile of the test substrate is actually measured by acquiring the temperature profile of the test substrate from the plurality of temperature sensors while the test substrate prepared in the preparation step is transported by the reflow apparatus having a predetermined temperature setting. Measuring steps;
The calculation step of calculating a heating characteristic value, which is an index indicating the difficulty of temperature increase at the temperature measurement point, based on the temperature profile measured in the measurement step. The heating condition determination method for the reflow device according to any one of items 3 to 4. The heating condition determination method for a reflow apparatus according to any one of claims 1 to 4, wherein the first transport speed is calculated based on an allowable production tact. A program for determining heating conditions in a reflow apparatus capable of simultaneously transporting and heating different types of substrates under a common temperature setting,
The temperature profile condition of the first substrate is simulated by simulating the temperature profile of the first substrate when the first substrate including the maximum heating characteristic value among the different types of substrates is transported at the first transport speed. A first search procedure for searching for a first temperature setting that satisfies
By simulating a temperature profile when each substrate other than the first substrate is transferred under the first temperature setting, a temperature profile other than the first substrate that satisfies a temperature profile condition of each substrate other than the first substrate is simulated. A second search procedure for searching the transport speed of each substrate;
Under the first temperature setting, a heating condition including contents of transporting the first substrate at the first transport speed and transporting each substrate other than the first substrate at the transport speed of each substrate is determined. A heating condition determination program for a reflow apparatus, characterized by causing a computer to execute a heating condition determination procedure.

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