JP2011114342A - 発光素子パッケージ - Google Patents
発光素子パッケージ Download PDFInfo
- Publication number
- JP2011114342A JP2011114342A JP2010256650A JP2010256650A JP2011114342A JP 2011114342 A JP2011114342 A JP 2011114342A JP 2010256650 A JP2010256650 A JP 2010256650A JP 2010256650 A JP2010256650 A JP 2010256650A JP 2011114342 A JP2011114342 A JP 2011114342A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting device
- package body
- thermal conductivity
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Abstract
【解決手段】本発明に係る発光素子パッケージは、パッケージ胴体と、上記パッケージ胴体のキャビティーに実装される発光素子と、上記発光素子を封入する封入層と、上記発光素子に連結される電極と、を含み、上記パッケージ胴体は、上記封入層を構成する物質より相対的に小さい熱伝導度の物質からなる。
【選択図】図1
Description
Claims (16)
- パッケージ胴体と、
前記パッケージ胴体のキャビティーに実装される発光素子と、
前記発光素子を覆う樹脂層と、
前記発光素子に連結される電極と、を含み、
前記パッケージ胴体は、前記樹脂層を構成する物質より低い熱伝導度の物質からなり,
前記パッケージ胴体と前記樹脂層とを構成する物質の熱伝導度の差は、少なくとも10W/(m・k)以上であることを特徴とする発光素子パッケージ。 - 前記樹脂層は、前記パッケージ胴体のキャビティー内に位置することを特徴とする請求項1に記載の発光素子パッケージ。
- 前記電極は、前記樹脂層の熱伝導度より高い熱伝導度を有することを特徴とする請求項1に記載の発光素子パッケージ。
- 前記電極は、前記発光素子の下部に取り付けられていることを特徴とする請求項1に記載の発光素子パッケージ。
- 前記電極は、銅またはアルミニウムを含む合金で形成されることを特徴とする請求項1に記載の発光素子パッケージ。
- 前記樹脂層の上に位置するレンズ部を更に含むことを特徴とする請求項1に記載の発光素子パッケージ。
- 前記パッケージ胴体は、前記レンズ部を構成する物質の熱伝導度より低い熱伝導度を有する物質からなることを特徴とする請求項6に記載の発光素子パッケージ。
- 前記パッケージ胴体と前記レンズ部とを構成する物質の熱伝導度の差は、少なくとも10W/(m・k)以上であることを特徴とする請求項6に記載の発光素子パッケージ。
- 前記樹脂物は、少なくとも1種の蛍光体を含むことを特徴とする請求項6に記載の発光素子パッケージ。
- 前記キャビティーは、前記樹脂層を埋め込む第1キャビティー、そして前記レンズ部を埋め込む第2キャビティーを含むことを特徴とする請求項6に記載の発光素子パッケージ。
- 前記第1キャビティーと前記第2キャビティーとは段差を有することを特徴とする請求項10に記載の発光素子パッケージ。
- 前記パッケージ胴体と前記レンズ部とを構成する物質の熱伝導度の差は、少なくとも0.01W/(m・k)以上であることを特徴とする請求項6に記載の発光素子パッケージ。
- 前記樹脂層は、前記発光素子からの熱を前記レンズ部及び前記電極に伝達することを特徴とする請求項6に記載の発光素子パッケージ。
- 基板と、
前記基板の上に配置される請求項1に記載の発光素子パッケージを含む発光モジュールと、
を含むことを特徴とする照明システム。 - パッケージ胴体と、
前記パッケージ胴体のキャビティーに実装される発光素子と、
前記発光素子を覆う樹脂層と、
前記発光素子に連結される電極と、を含み、
前記パッケージ胴体は、前記パッケージ胴体は、前記樹脂層を構成する物質より低い熱伝導度の物質からなり,
前記パッケージ胴体と前記樹脂層とを構成する物質の熱伝導度の差は、少なくとも0.01W/(m・k)以上であることを特徴とする発光素子パッケージ。 - 前記樹脂層の上に位置するレンズ部を更に含み、
前記パッケージ胴体は、前記レンズ部を構成する物質の熱伝導度より低い熱伝導度を有する物質からなることを特徴とする請求項15に記載の発光素子パッケージ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0113141 | 2009-11-23 | ||
KR1020090113141A KR101163850B1 (ko) | 2009-11-23 | 2009-11-23 | 발광 소자 패키지 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2011114342A true JP2011114342A (ja) | 2011-06-09 |
Family
ID=43480695
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010256650A Pending JP2011114342A (ja) | 2009-11-23 | 2010-11-17 | 発光素子パッケージ |
Country Status (5)
Country | Link |
---|---|
US (1) | US8791482B2 (ja) |
EP (1) | EP2325908A3 (ja) |
JP (1) | JP2011114342A (ja) |
KR (1) | KR101163850B1 (ja) |
CN (1) | CN102082223B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140121507A (ko) * | 2013-04-05 | 2014-10-16 | 크루셜텍 (주) | 플래시용 led 모듈 및 그 제조방법 |
KR101523664B1 (ko) * | 2013-06-11 | 2015-05-29 | 주식회사 세미콘라이트 | 금속 기판 제조 방법 및 이 방법으로 제조된 금속 기판을 포함하는 반도체 발광소자 |
SG10201705797UA (en) * | 2013-09-10 | 2017-08-30 | Heptagon Micro Optics Pte Ltd | Compact opto-electronic modules and fabrication methods for such modules |
Citations (2)
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---|---|---|---|---|
JP2008270709A (ja) * | 2006-10-31 | 2008-11-06 | Techno Polymer Co Ltd | 放熱性樹脂組成物、led実装用基板、リフレクター、及び、リフレクター部を備えるled実装用基板 |
JP2009071090A (ja) * | 2007-09-14 | 2009-04-02 | Toshiba Lighting & Technology Corp | 発光装置 |
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JPH1051034A (ja) | 1996-08-01 | 1998-02-20 | Rohm Co Ltd | 面実装型電子部品、その製造方法、これを回路基板上に実装する方法、およびこれを実装した回路基板 |
US6867542B1 (en) * | 2000-03-29 | 2005-03-15 | General Electric Company | Floating chip photonic device and method of manufacture |
US7019335B2 (en) | 2001-04-17 | 2006-03-28 | Nichia Corporation | Light-emitting apparatus |
GB0203588D0 (en) * | 2002-02-14 | 2002-04-03 | Enfis Ltd | A light system |
US7244965B2 (en) * | 2002-09-04 | 2007-07-17 | Cree Inc, | Power surface mount light emitting die package |
US7264378B2 (en) * | 2002-09-04 | 2007-09-04 | Cree, Inc. | Power surface mount light emitting die package |
JP4192619B2 (ja) | 2003-02-17 | 2008-12-10 | 豊田合成株式会社 | 発光ダイオードランプ装置 |
US6835960B2 (en) * | 2003-03-03 | 2004-12-28 | Opto Tech Corporation | Light emitting diode package structure |
TW595017B (en) * | 2003-04-17 | 2004-06-21 | Arima Optoelectronics Corp | Light-emitting diode with high thermal conductivity and its manufacturing method |
JP4645071B2 (ja) * | 2003-06-20 | 2011-03-09 | 日亜化学工業株式会社 | パッケージ成型体およびそれを用いた半導体装置 |
JP2005252219A (ja) * | 2004-02-06 | 2005-09-15 | Toyoda Gosei Co Ltd | 発光装置及び封止部材 |
JP2006206721A (ja) * | 2005-01-27 | 2006-08-10 | Kansai Electric Power Co Inc:The | 高耐熱合成高分子化合物及びこれで被覆した高耐電圧半導体装置 |
US7910940B2 (en) * | 2005-08-05 | 2011-03-22 | Panasonic Corporation | Semiconductor light-emitting device |
JP5233170B2 (ja) * | 2007-05-31 | 2013-07-10 | 日亜化学工業株式会社 | 発光装置、発光装置を構成する樹脂成形体及びそれらの製造方法 |
KR101360732B1 (ko) * | 2007-06-27 | 2014-02-07 | 엘지이노텍 주식회사 | 발광 다이오드 패키지 |
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US8337029B2 (en) * | 2008-01-17 | 2012-12-25 | Intematix Corporation | Light emitting device with phosphor wavelength conversion |
KR101274816B1 (ko) | 2008-02-14 | 2013-06-13 | 주식회사 엘지화학 | 내열도, 반사율 및 열전도도가 우수한 수지 조성물 및 제조방법 |
JP2011023460A (ja) | 2009-07-14 | 2011-02-03 | Panasonic Corp | 発光装置の製造方法および発光装置 |
-
2009
- 2009-11-23 KR KR1020090113141A patent/KR101163850B1/ko active IP Right Grant
-
2010
- 2010-11-17 JP JP2010256650A patent/JP2011114342A/ja active Pending
- 2010-11-18 US US12/949,414 patent/US8791482B2/en active Active
- 2010-11-23 CN CN201010559362.6A patent/CN102082223B/zh active Active
- 2010-11-23 EP EP20100192289 patent/EP2325908A3/en not_active Ceased
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008270709A (ja) * | 2006-10-31 | 2008-11-06 | Techno Polymer Co Ltd | 放熱性樹脂組成物、led実装用基板、リフレクター、及び、リフレクター部を備えるled実装用基板 |
JP2009071090A (ja) * | 2007-09-14 | 2009-04-02 | Toshiba Lighting & Technology Corp | 発光装置 |
Also Published As
Publication number | Publication date |
---|---|
CN102082223A (zh) | 2011-06-01 |
US20110121340A1 (en) | 2011-05-26 |
EP2325908A2 (en) | 2011-05-25 |
US8791482B2 (en) | 2014-07-29 |
KR20110056704A (ko) | 2011-05-31 |
CN102082223B (zh) | 2015-07-15 |
EP2325908A3 (en) | 2014-09-10 |
KR101163850B1 (ko) | 2012-07-09 |
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