JP2011109225A - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which efficiently dissipates heat generated by semiconductor elements with a simple configuration. <P>SOLUTION: The semiconductor device 100 is provided with: a solid-state imaging element 1 which has a first surface and a second surface, and has a light receiving area 2 and an electrode unit 3 on the first surface; and a flexible substrate 30 with a front surface 30A and a rear surface 30B. The flexible substrate has at least a heat dissipation unit which is partially exposed on the front surface, and a wiring pattern on the rear surface. The electrode unit is electrically connected to the wiring pattern. The second surface of the solid-state imaging element is thermally connected to the heat dissipation unit through heat conductive adhesive 60. The flexible substrate has a cut portion 31 which surrounds a part of the region so as to include a part exposed on a surface of the heat dissipation unit. The solid-state imaging element is arranged on the flexible substrate so that (1) the electrode unit of the first surface faces the rear surface, (2) the exposed unit of the first surface is surrounded by the cut portion, (3) at least a part of the second surface faces the front surface surrounded by the cut portion. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a semiconductor device, and more particularly to a semiconductor device provided with a flexible substrate having a heat dissipation structure.

Conventionally, on a semiconductor substrate made of Si (silicon) or the like, a semiconductor element in which a light receiving region for incident light from the outside of the semiconductor element is formed as an exposed portion, or a light emitting region for emitting light to the outside of the semiconductor element as an exposed portion is formed. Such semiconductor devices have been put into practical use.
Among these, as an example of a semiconductor element in which a light receiving region is formed, a solid-state imaging device typified by a CCD image sensor and a CMOS image sensor is widely used in a video camera, a digital camera, a mobile phone, and the like.

As an example of a camera module using the above-described solid-state imaging device, Patent Document 1 describes a camera module (semiconductor device) and a manufacturing method thereof. The camera module described in Patent Document 1 includes a substrate in which an opening is formed, a solid-state imaging device in a bare chip state in which an imaging surface is exposed to the opening side and flip-chip mounted on the substrate, and is attached to the solid-state imaging device. A translucent protective plate that protects the imaging surface of the imaging element, and a heat radiating member that radiates heat generated by the solid-state imaging element is attached to the bottom surface of the solid-state imaging element that faces the imaging surface. .
In the camera module of Patent Document 1, a heat dissipation plate formed of a metal having a small thickness and high thermal conductivity, such as copper, is attached to the bottom surface of the solid-state image sensor as a heat dissipation member, and heat generated in the solid-state image sensor is generated. Since heat is dissipated, heat dissipation is improved, and the operation speed and processing speed can be increased during shooting.

JP 2008-153938 A

  In recent years, there has been a demand for higher definition (higher pixels) and higher functionality of solid-state imaging devices. As the operation speed of the circuit formed on the solid-state image sensor increases with the increase in definition and functionality, the amount of heat generated by the solid-state image sensor increases, the temperature of the solid-state image sensor increases, and the light receiving area increases. It is known that the performance of a solid-state imaging device deteriorates by increasing thermal noise and dark current.

  For this reason, it is important for improving the quality of a semiconductor device provided with a solid-state imaging element to efficiently dissipate heat generated by the solid-state imaging element to the outside of the semiconductor device and prevent a temperature rise of the solid-state imaging element. On the other hand, such semiconductor devices are required to be further reduced in size and cost from the viewpoint of miniaturization of devices such as mounted video cameras, and the heat generated by the solid-state imaging device is radiated to the outside of the semiconductor device. It is also important to simplify the configuration for this purpose.

  However, in the camera module and the manufacturing method thereof described in Patent Document 1, the input / output pads of the solid-state imaging device and the input / output pads provided so as to surround the opening of the flexible substrate are electrically connected by soldering via the bumps. Flip-chip mounting with physical and physical connection. The heat generated by the solid-state imaging device is radiated by the heat-dissipating member attached to the bottom surface of the solid-state imaging device opposite to the imaging surface. That is, the camera module described in Patent Document 1 is a configuration that requires a heat dissipation member that is a separate member from the flexible substrate that is electrically connected to the solid-state imaging device for heat dissipation, and the cost of the heat dissipation member is low. There was a problem that it was a cause of cost increase.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a semiconductor device that can efficiently dissipate heat generated by a semiconductor element with a simple configuration.

  In order to solve the above problems, the present invention provides a semiconductor element having a first surface and a second surface, an exposed portion and an electrode portion on the first surface, a third surface and a second surface. And a flexible substrate having a fourth surface, wherein the flexible substrate has a heat radiating portion at least partially exposed to the third surface, and a wiring is provided on the fourth surface. And the electrode portion of the semiconductor element is electrically connected to the wiring pattern of the flexible substrate, and the second surface of the semiconductor element is connected to the flexible substrate via a heat conductive member. Thermally connected to the heat radiating portion of the flexible substrate, the flexible substrate has a notch surrounding a part of the region so as to include a portion exposed to the third surface of the heat radiating portion; The semiconductor element is opposed to the flexible substrate. (1) The electrode portion of the first surface is opposed to the fourth surface. (2) The exposed portion of the first surface is surrounded by the cut, and (3) at least a part of the second surface is opposed to the third surface surrounded by the cut. Are arranged.

  The heat dissipating part is a via that thermally connects the heat dissipating pattern formed on the third surface and the fourth surface, and the heat dissipating pattern of the third surface and the heat dissipating pattern of the fourth surface. You may have.

  The via may be formed in a range surrounded by the notch facing the second surface of the semiconductor element.

  The heat radiating part and the heat conductive member may be conductive and electrically connected to the second surface of the semiconductor element.

  According to the semiconductor device of the present invention, the heat generated by the semiconductor element can be efficiently radiated with a simple configuration.

1 is an exploded perspective view showing a semiconductor device according to a first embodiment of the present invention. (A) is a top view which shows the surface of the flexible substrate of the semiconductor device, (b) is a top view which shows the back surface of the flexible substrate. (A) is sectional drawing of the semiconductor device in the position corresponding to the AA line of FIG. 1, (b) is sectional drawing of the semiconductor device in the position corresponding to the BB line of FIG. is there. It is a perspective view which decomposes | disassembles and shows the semiconductor device of 2nd Embodiment of this invention. (A) is a top view which shows the surface of the flexible substrate of the semiconductor device, (b) is a top view which shows the back surface of the flexible substrate. (A) is sectional drawing of the semiconductor device in the position corresponding to CC line of FIG. 1, (b) is sectional drawing of the semiconductor device in the position corresponding to BB line of FIG. is there. It is a side view which shows the shape of the flexible substrate in the semiconductor device of the modification of this invention. It is a perspective view which shows the shape of the flexible substrate in the semiconductor device of the modification of this invention. (A) And (b) is a top view which shows the shape of the flexible substrate in the semiconductor device of the modification of this invention.

  The semiconductor device according to the first embodiment of the present invention will be described below with reference to FIGS. In each embodiment of the present invention, as an example of a semiconductor element, a case where a solid-state imaging element formed on a semiconductor substrate with a light receiving region that accumulates incident light as an exposed part will be described in detail. It is also possible to use a semiconductor element in which a light emitting region for emitting light is formed.

  FIG. 1 is an exploded perspective view showing the semiconductor device 100 of the present embodiment. As shown in FIG. 1, the semiconductor device 100 is flexible in which a solid-state imaging device 1 having a light-receiving region 2 and an electrode portion 3 and a cut 31 surrounding a range including the light-receiving region 2 of the solid-state imaging device 1 are formed. The adhesive 20, the flexible substrate 30, and the adhesive 40 are sandwiched between the substrate 30 and the first surface (surface on which the light receiving region 2 is formed; hereinafter referred to as “surface”) of the solid-state imaging device 1. The translucent member 50 disposed at a position facing the light receiving region 2 and a heat conductive adhesive (heat) disposed on the second surface (hereinafter referred to as “back surface”) side of the solid-state imaging device 1. Conductive member) 60. A part of the flexible substrate 30 surrounded by the notch 31 is thermally connected and fixed to the back surface of the solid-state imaging device 1 by a heat conductive adhesive 60. The heat conductive adhesive 60 is disposed so as to cover the entire surface of the flexible substrate 30 surrounded by the cuts 31 in order to increase the thermal connection area between the back surface of the solid-state imaging device 1 and the surface of the flexible substrate 30. Is preferred.

FIG. 2 is a diagram showing the flexible substrate 30. 2A is a plan view showing a surface (third surface) 30A of the flexible substrate facing the adhesive 40 in FIG. 1, and FIG. 2B is a plan view showing the adhesive 20 in FIG. It is a top view which shows the back surface (4th surface) 30B of the flexible substrate which opposes.
On the flexible substrate 30, a heat radiation pattern 33 made of a general copper foil or the like is formed on the entire surface 30 </ b> A. On the back surface 30B, a heat dissipation pattern 35 is formed in a region surrounded by the notch 31, and wiring patterns 34A, 34B, and 34C such as copper foils dissipate heat in a region around the heat dissipation pattern 35 that is not surrounded by the notch 31, respectively. It is formed so as to be electrically separated from the pattern 35. Such a flexible substrate 30 can be easily manufactured by using a known two-layer flexible substrate.

A via 32 penetrating the flexible substrate in the thickness direction is formed in a range surrounded by the notch 31 of the flexible substrate 30 (hereinafter sometimes referred to as “enclosed region”). The heat radiation pattern 33 on the front surface 30A of the flexible substrate 30 and the heat radiation pattern 35 on the back surface 30B are thermally connected.
As the via 32, a through hole, a stacked via, or the like used for general substrate wiring layer connection can be preferably used, but the via 32 is not limited thereto. When the via 32 is formed of a through hole, it is preferable to fill the internal space with a metal solder or the like because the heat conduction efficiency can be increased. Moreover, although the formation position and the number of vias 32 can be set as appropriate, it is preferable that the number of formations is large. This is because a large number of heat conduction paths from the front surface 30A to the back surface 30B of the flexible substrate 30 can be secured and the heat dissipation efficiency can be improved.
As described above, the flexible substrate 30 is formed with the heat radiation portion 39 including the heat radiation patterns 33 and 35 and the vias 32, and at least a part of the heat radiation portion 39 is exposed to the surface 30 </ b> A. It is thermally connected to the back side.

  The six electrode portions 3 formed on the two opposite sides of the peripheral portion of the light receiving region 2 on the surface of the solid-state imaging device 1 and the wiring patterns 34A, 34B, 34C formed on the back surface 30B of the flexible substrate 30 are: The bumps are opposed to each other at a bump position 36 and are electrically connected by metal bumps 10 as an example of protruding electrodes as shown in FIG. The solid-state imaging device 1 is fixed to the flexible substrate 30 by an adhesive 20 disposed in the peripheral region of the surface of the solid-state imaging device 1 including the electrode portion 3. The metal bump 10 of this embodiment is made of gold, but other metals, alloys, solders, or the like can also be used.

By arranging the surrounding area of the flexible substrate 30 surrounded by the notch 31 on the back surface of the solid-state imaging device 1, a through hole 38 is formed in the flexible substrate, and the light receiving region 2 of the solid-state imaging device 1. Are arranged so as to be surrounded by the notch 31 and overlap with the through hole 38 in plan view.
The translucent member 50 is made of transparent glass, resin, or the like, and is fixed to the surface of the solid-state imaging device 1 and the surface 30 </ b> A of the flexible substrate 30 by an adhesive 40. A part of the adhesive 40 is disposed on the adhesive 20 in the through hole 38, and the rest is disposed on the surface 30 </ b> A of the flexible substrate 30.
By being configured as described above, light incident from the outside of the semiconductor device 100 can pass through the translucent member 50 and enter the light receiving region 2 of the solid-state imaging device 1 through the through hole 38. It has become.

  3A is a cross-sectional view when the semiconductor device 100 is completed at a position corresponding to the line AA shown in FIGS. 1 and 2, and FIG. 3B is a cross-sectional view taken along the line B- shown in FIGS. 1 and 2. It is sectional drawing at the time of completion of the semiconductor device 100 in the position corresponding to B line. As shown in FIG. 3A, the translucent member 50 is fixed by the adhesive 20 and the adhesive 40 arranged on the surface of the solid-state imaging device 1, and the space 51 on the surface of the solid-state imaging device 1 The flexible substrate 30, the adhesive 40, and the translucent member 50 are hermetically sealed so that dust and the like do not enter.

As shown in FIGS. 3A and 3B, in the flexible substrate 30, there is an insulating layer between the heat radiation pattern 33 and the heat radiation pattern 35 and between the heat radiation pattern 33 and the wiring patterns 34 </ b> A, 34 </ b> B, 34 </ b> C. 37 is electrically separated. The metal bump 10 disposed on the electrode portion 3 on the surface of the solid-state imaging device 1 is electrically connected to the wiring patterns 34A, 34B, and 34C formed on the back surface 30B of the flexible substrate 30 with the adhesive 20. It is fixed.
Further, the back surface of the solid-state imaging device 1, the adhesive 40, and the heat radiation patterns 33 and 35 and the via 32 constituting the heat radiation portion 39 are thermally connected to each other and fixed integrally.

The operation of heat dissipation when using the semiconductor device 100 of the present embodiment configured as described above will be described.
Light enters through the translucent member 50 from the outside of the semiconductor device 100 and reaches the light receiving region 2 of the solid-state imaging device 1. The light reaching the light receiving region 2 is output to the outside through at least one wiring pattern of the wiring patterns 34A, 34B, and 34C as an electric signal after being subjected to predetermined processing by a signal reading circuit (not shown). The As the signal readout circuit operates at high speed, the solid-state image sensor 1 generates heat, and the heat diffuses throughout the solid-state image sensor 1.

  The heat diffused throughout the solid-state imaging device 1 is conducted from the back surface of the solid-state imaging device 1 to the heat conductive adhesive 60 and diffuses throughout the heat conductive adhesive 60. As shown by an arrow in FIG. 3A, a part of the heat diffused in the heat conductive adhesive 60 is radiated to the outside of the semiconductor device 100, and the remainder is thermally connected to the flexible substrate 30. Heat conduction to the heat radiation pattern 33 on the surface 30A of the substrate. The heat diffused throughout the heat radiation pattern 33 is partially radiated to the outside of the semiconductor device 100, and the rest is dispersed in the vias 32 and thermally conducted to the heat radiation pattern 35 on the back surface 30 </ b> B of the flexible substrate 30. Thereafter, the heat is diffused throughout the heat radiation pattern 35 and finally radiated to the outside of the semiconductor device 100. Thus, the heat generated in the solid-state imaging device 1 is efficiently released by the heat radiating unit 39 attached to the back surface of the solid-state imaging device 1.

  As described above, in the semiconductor device 100 according to the present embodiment, the surface 30 </ b> A in the surrounding area surrounded by the notch 31 in the flexible substrate 30 having the wiring pattern that is electrically connected to the solid-state imaging device 1. The heat radiation pattern 33 exposed to the surface is formed, and is thermally connected to the back surface of the solid-state imaging device 1 through the heat conductive adhesive 60. Accordingly, since a member such as a heat sink is not required separately from the flexible substrate, the heat generated by the solid-state imaging device 1 can be efficiently radiated from the heat radiation pattern 33 while reducing the manufacturing cost of the semiconductor device 100. .

  In addition, since the via 32 is formed in the surrounding region of the flexible substrate 30 facing the back surface of the solid-state image pickup device 1 with the heat conductive adhesive 60 interposed therebetween, the solid-state image pickup device 1 is generated with the shortest heat conduction path. Heat can be conducted to the heat radiation pattern 35 on the back surface 30B of the flexible substrate 30 to improve heat radiation efficiency.

  Furthermore, since the heat radiation pattern 33, the heat radiation pattern 35, and the via 32 constituting the heat radiation part 39 can be formed on the flexible substrate 30 by a general manufacturing process, it is necessary to provide a special manufacturing process to form the heat radiation part. Therefore, the time and cost for manufacturing the semiconductor device 100 can be further suppressed.

  In addition, since the heat dissipating patterns 33 and 35 can be formed of a general copper foil or the like, it is easy to adopt a configuration having a function of electrically connecting to the solid-state imaging device 1. That is, it is possible to give the heat radiating portion an electrical function. For example, by using the heat radiation part 39 as a potential supply wiring pattern including the ground to the back surface of the solid-state imaging device 1, the potential of the solid-state imaging device 1 and the flexible substrate 30 is shared, and the semiconductor device 100 The operation can be stabilized. In this case, a material or the like may be appropriately selected so that the via 32 and the heat conductive adhesive 60 have conductivity.

The flexible substrate 30 of the present embodiment can be manufactured using a single-layer or multilayer flexible substrate in addition to a two-layer flexible substrate.
In this embodiment, the example in which the solid-state imaging device 1 and the flexible substrate 30 are electrically connected using the metal bumps 10 and the adhesive 20 has been described. However, the solid-state imaging device 1 and the flexible substrate are described. The electrical connection method with 30 is not limited to this, and may be connected using, for example, an anisotropic conductive film.

  In the semiconductor device of the present invention, it is necessary to leave a portion connected to the electrode portion of a semiconductor element such as a solid-state imaging element on the back surface of the flexible substrate, and the surrounding area of the flexible substrate is downward. The entire back surface of the solid-state image sensor cannot be covered by two points of being bent and connected to the back surface of the solid-state image sensor. However, all the uncovered regions are near the periphery of the back surface of the semiconductor element, and usually, electrode portions are often formed at corresponding positions on the front surface, so that heat generated in the regions is small. Therefore, the heat dissipation performance of the heat dissipation part is not greatly impaired.

  Next, a second embodiment of the present invention will be described with reference to FIGS. The difference between the semiconductor device 200 of the present embodiment and the semiconductor device 100 of the first embodiment is the arrangement of the electrode portions in the solid-state imaging device and the shape of the cuts in the flexible substrate. In addition, about the structure which is common in 1st Embodiment, the same code | symbol is attached | subjected and the overlapping description is abbreviate | omitted.

FIG. 4 is an exploded perspective view showing the semiconductor device 200. The semiconductor device 200 includes a solid-state image sensor 101 instead of the solid-state image sensor 1, and includes a flexible substrate 130 instead of the flexible substrate 30.
In the solid-state imaging device 1, the electrode unit 3 is formed along two opposite sides of the periphery, whereas in the solid-state imaging device 101, eight electrode units 103 are formed along the four sides of the periphery. Yes. As described above, in order to secure a region connected to each electrode portion on the back surface of the flexible substrate, the region needs to be positioned around the cut so as not to be surrounded by the cut.
Therefore, in the semiconductor device 200, the cut shape is set so as to maximize the area of a part of the flexible substrate 130 connected to the back surface of the solid-state imaging device 101 while satisfying this requirement.

  FIG. 5A is a plan view showing the front surface 130 </ b> A of the flexible substrate 130, and FIG. 5B is a plan view showing the back surface 130 </ b> B of the flexible substrate 130. A heat dissipation pattern 33 is formed on the entire surface 130A of the flexible substrate 130 as in the first embodiment. In addition to the wiring patterns 34A, 34B, and 34C, wiring patterns 134A and 134B are formed on the back surface 130B, and a total of eight wiring patterns are formed corresponding to each electrode portion 103 of the solid-state imaging device 101. Yes.

The notch 131 that defines the surrounding area attached to the back surface of the solid-state imaging device 101 is set to avoid these wiring patterns so as not to surround each of the wiring patterns 34A, 34B, 34C, 134A, and 134B. Further, in order to increase the area of the surrounding region, the notch 131 partially extends between adjacent wiring patterns so as to surround the region between the wiring patterns.
By setting the notch 131 as described above, the surrounding area surrounded by the notch 131 is set to have a shape having a plurality of convex portions 131A protruding to the periphery.

  Vias 132 are formed in the surrounding area of the flexible substrate 130 as in the first embodiment. In addition, a via 139 that penetrates the flexible substrate 130 in the thickness direction is also formed in a region that is not surrounded by the notch 131. The basic structures of the vias 132 and 139 are the same as those of the via 32 of the first embodiment except that the installation positions and the number of the vias 132 and 139 are different.

  As shown in FIG. 4, a through hole 138 having a shape corresponding to the cut 131 is formed in the flexible substrate 130, and the solid-state imaging device 101 can receive light in the light receiving region 2 through the through hole 138. The adhesive 20 is fixed to the flexible substrate 130. At the same time, the solid-state imaging device 101 is electrically connected to the wiring patterns 34A, 34B, 34C, 134A, and 134B at the bump position 36 (see FIG. 5B) by the eight bumps 10 corresponding to the electrode portions 103. Connected.

6A is a cross-sectional view when the semiconductor device 200 is completed at a position corresponding to the line CC shown in FIGS. 4 and 5, and FIG. 6B is a cross-sectional view taken along the line D- shown in FIGS. 4 and 5. It is sectional drawing at the time of completion of the semiconductor device 200 in the position corresponding to D line. As shown in FIGS. 6A and 6B, the surrounding region of the flexible substrate 130 is connected to the back surface of the solid-state imaging device 101 by a heat conductive adhesive 60. The application region of the heat conductive adhesive 60 is preferably set in accordance with the shape of the surrounding region as shown in FIG.
Since the surrounding area has a plurality of convex portions 131A on the periphery, it is also thermally connected to a part of the periphery on the back surface of the solid-state imaging device 101 as shown in FIG. Therefore, although the semiconductor device 200 includes the solid-state image sensor 101 having more electrodes than the solid-state image sensor 1, a part of the flexible substrate 130 is thermally applied to the back surface of the solid-state image sensor 101 with a larger area. It is connected to the.

In the semiconductor device 200 of the present embodiment as well, as with the semiconductor device 100 of the first embodiment, the heat generated by the solid-state imaging device 101 can be efficiently radiated from the heat radiation patterns 33 and 35 while reducing the manufacturing cost. it can.
In addition, in the flexible substrate 130, the shape of the cut 131 is set so that the surrounding region surrounded by the cut 131 connected to the back surface of the solid-state imaging device 101 has a plurality of convex portions 131A. The heat dissipation can be performed more efficiently by increasing the connection area between the conductive substrate 130 and the back surface of the solid-state imaging device 101.

  Further, in the flexible substrate 130, the via 139 is formed in a region not surrounded by the notch 131, so that more heat conduction paths from the front surface 130A to the back surface 130B of the flexible substrate 130 are secured. Furthermore, the heat dissipation efficiency can be improved.

The semiconductor device of the present invention has been described with reference to the embodiments. However, the technical scope of the present invention is not limited to the above-described embodiments and examples, and various modifications can be made without departing from the spirit of the present invention. It is possible to make changes.
For example, in each of the above-described embodiments, an example in which at least a part of the heat radiating part is formed to be exposed on the surface of the flexible substrate has been described, but instead, at least a part of the heat radiating part is allowed. It may be formed so as to be exposed on the back surface of the flexible substrate. In this case, as in the modification shown in FIG. 7, a part of the surrounding region 70 of the flexible substrate 30 may be folded back and the back surface 30 </ b> B may be thermally connected to the back surface of the solid-state imaging device 1. Further, the direction of folding is not particularly limited, and the back surface 30B of the flexible substrate 30 may be connected to the solid-state imaging device 1 by folding back in parallel with the extending direction of the surrounding region 70 as shown in FIG.

Further, in each of the above-described embodiments, an example in which one surrounding area surrounded by the cut is formed in the flexible substrate has been described. However, the shape of the cut is such that two or more surrounding areas are formed. It may be set. For example, as in the modification shown in FIG. 9A, by forming H-shaped cuts 31A in the flexible substrate 30, each pair is surrounded by the cuts 31A and opposite ends. Regions 70A and 70B may be formed. Further, by forming the cut 31B as in the modification shown in FIG. 9B in the flexible substrate 30, each of the cuts 31B is surrounded, and two surrounding regions 71A and 71B extending alternately are formed. Also good.
In the present invention, “the cut surrounds a part of the flexible substrate” means that a semiconductor element is sandwiched between a part of the flexible substrate surrounded by the cut and a region not surrounded by the cut. It means that the partial area is surrounded so that it can be separated to a certain extent, and does not mean that the partial area is surrounded without a gap. Accordingly, there is no particular limitation on the shape of the region or the shape of the cut as long as the partial region can be separated from the region not surrounded by the semiconductor element. However, as described above, the larger the connection area between the surrounding area and the back surface of the semiconductor element, the more efficiently heat can be dissipated. Therefore, the shape of the surrounding area and the shape of the cut are set so that the connection area becomes as large as possible. preferable.

  Further, in the present embodiment, the heat radiating portion has been described as having the heat radiating pattern formed on both surfaces of the flexible substrate and vias that thermally connect these heat radiating patterns. The configuration of the unit may be appropriately set according to the required heat dissipation performance. For example, the heat dissipating part may be formed only by the heat dissipating pattern formed on either the front surface or the back surface, or the heat dissipating part may be formed only by the via that penetrates the surrounding region in the thickness direction. Further, although the heat conduction between the front surface and the back surface is slightly lowered, the heat radiating portion may be constituted by only the heat radiation patterns on both surfaces.

In addition to the semiconductor elements, other electrical components may be mounted on the semiconductor device of the present invention.
Further, the thermally conductive adhesive that thermally connects the semiconductor element and the flexible substrate has a shape that covers the entire surrounding area of the flexible substrate connected to the semiconductor element in order to increase the connection area between the two. Although it is desirable to improve the heat dissipation efficiency, the arrangement shape of the heat conductive adhesive is not limited to this. That is, the arrangement shape of the heat conductive adhesive is not particularly limited as long as the semiconductor element and the heat radiating portion formed in the surrounding region are thermally connected.

1,101 Solid-state imaging device (semiconductor device)
2 Light receiving area (exposed part)
3, 103 Electrode portion 30, 130 Flexible substrate 30A, 130A Surface (third surface)
30B, 130B Back side (fourth side)
31, 31A, 31B, 131 Notch 32, 132, 139 Via 33, 35 Heat radiation pattern 34A, 34B, 34C, 134A, 134B Wiring pattern 39 Heat radiation portion 60 Thermal conductive adhesive (thermal conductive member)
100, 200 Semiconductor device

Claims (4)

A semiconductor element having a first surface and a second surface, the first surface having an exposed portion and an electrode portion, and a flexible substrate having a third surface and a fourth surface. In semiconductor devices
The flexible substrate has a heat radiation part at least partially exposed on the third surface, and has a wiring pattern on the fourth surface,
The electrode portion of the semiconductor element is electrically connected to the wiring pattern of the flexible substrate,
The second surface of the semiconductor element is thermally connected to the heat dissipating part of the flexible substrate via a heat conductive member,
The flexible substrate has a notch surrounding a part of the region so as to include a portion exposed on the third surface of the heat radiating portion;
The semiconductor element is relative to the flexible substrate.
(1) The electrode portion of the first surface is opposed to the fourth surface,
(2) The exposed portion of the first surface is surrounded by the cut.
(3) At least a part of the second surface is opposed to the third surface surrounded by the notch,
A semiconductor device which is arranged.   The heat dissipating part is a via that thermally connects the heat dissipating pattern formed on the third surface and the fourth surface, and the heat dissipating pattern of the third surface and the heat dissipating pattern of the fourth surface. The semiconductor device according to claim 1, wherein:   The semiconductor device according to claim 2, wherein the via is formed in a range surrounded by the notch facing the second surface of the semiconductor element.   The said heat radiating part and the said heat conductive member have electroconductivity, and are electrically connected with the said 2nd surface of the said semiconductor element, The any one of Claim 1 to 3 characterized by the above-mentioned. Semiconductor device.

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