JP2011108943A - Semiconductor device, substrate for semiconductor device and method for manufacturing them - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device where the plating of high gloss can securely be formed only in a necessary part while manufacturing is made efficient by using a resist layer of a material which does not dissolve in a fluid plating liquid by which the plating of high gloss can be obtained and finally making the resist layer as a part of a device exterior without removing the layer after plating, and to provide manufacturing methods of the semiconductor device and a substrate for the semiconductor device. <P>SOLUTION: Since the resist layer 12 formed in a non-arranging part of a metal part 11 prior to the formation of the metal part 11 in the semiconductor device 1 where the metal part 11 is exposed at a bottom has resistance to the plating liquid used in plating of a surface metal layer 13 to a surface of the metal part 11, plating on a part except for a necessary part is securely prevented without deteriorating the resist layer 12 against the plating liquid, the surface metal layer 13 of the high gloss can appropriately be formed only in the necessary part such as the surface of the meal part 11, and the surface metal layer 13 can be used as a reflection part of light. Thus, an application range as the semiconductor device can be expanded. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a semiconductor device packaged with a metal portion such as an electrode exposed at the bottom, and a substrate for a semiconductor device used for manufacturing the semiconductor device.

  A general structure in which a semiconductor element is mounted on a substrate for supporting a semiconductor element, and the semiconductor element and a metal terminal for lead-out are connected by wiring, and the entire substrate including the semiconductor element is covered with a protective material such as resin. In the semiconductor device, a metal part (lead) to be a semiconductor element mounting part or an electrode part is formed, a semiconductor element is mounted on the metal part, and after processing of the wiring or the like, the metal part having the semiconductor element or wiring or the like A semiconductor device whose surface side is sealed with a sealing material such as a resin and the metal part is partially exposed at the bottom can be made space-saving by reducing its height, and through the exposed metal part The heat generated in the semiconductor element can be released to the outside and the heat dissipation is excellent, and it is attracting attention in the field of ultra-small semiconductor devices such as chip size.

  In such a semiconductor device, a metal part to be a semiconductor element mounting part or an electrode part is mainly formed on a conductive mother substrate by electroforming by a desired number of semiconductor devices, and the semiconductor element is mounted on the wiring. After sealing the surface side of the metal part that has undergone the above processing with a sealing material, it is manufactured through a manufacturing process such as removing only the base substrate and individually cutting a number of integrated semiconductor devices. As an example of a method for manufacturing such a semiconductor device, there are those disclosed in Japanese Patent Application Laid-Open Nos. 2002-9196 and 2004-214265.

JP 2002-9196 A JP 2004-214265 A

  A conventional method for manufacturing a semiconductor device has a structure shown in the above-mentioned patent document. In forming a metal part on a mother board by electroforming, a resist layer is previously formed on a non-arranged part of the metal part on the mother board. The metal part was formed at an appropriate position. A metal such as nickel suitable for electroforming is used for the metal part, and silver plating is generally applied to the surface of the metal part in order to improve the conductivity and the bonding property of the wire for wiring. Also for this plating, the resist layer played a role of preventing the adhesion of the plating to portions other than the necessary portions. Then, after dissolving and removing the resist layer with a solvent or the like, the base substrate and the metal portion formed on the surface of the resist substrate are used as a semiconductor device substrate, and the semiconductor device manufacturing process is further performed. Sealing with wiring and a sealing material was performed.

  Conventionally, silver plating on the metal surface has a low gloss, but the resist layer is difficult to dissolve, the current density during plating can be increased, the processing time can be shortened, and wastewater treatment can be easily performed. A low-cyanide and weakly alkaline plating solution having such a characteristic was used. On the other hand, in recent years, for the purpose of applying the device structure to an LED or the like that emits light to the outside through a light-transmitting sealing material, the plated part on the surface of the metal part is also expected to function as a reflection part of the emitted light. As a result, there is an increasing number of cases where a high-gloss plating having excellent light reflectivity is required as the plating.

  In the case of silver plating, it is known to add a brightening agent containing components such as arsenic, selenium, tellurium and thallium to the plating solution in order to increase the degree of luster of the plating. Has a problem that the plating solution is not sufficiently exhibited unless it is a liquid of high cyan and strong alkali. However, if the plating solution is simply made of a high-cyan strong alkali in order to obtain the effect of the brightener and obtain a high-gloss plating, the current density during plating cannot be increased and the processing time is long. As a result, the resist layer also comes into contact with the plating solution for a longer time, and the resist layer that has been used in the past has insufficient resistance to strong alkali and can function as a resist layer, such as being dissolved by contact with the plating solution. It had the problem of being unable to do so.

  On the other hand, the conventional resist layer was dissolved and removed at the stage of the substrate for a semiconductor device because it was necessary to cover and protect the metal part with a sealing material having high physical strength. While creating a high-gloss plating on metal parts, there should be no material that can withstand strong alkaline plating solutions, creating a situation where high-gloss plating can be performed. Had the problem of not being able to.

  The present invention has been made to solve the above-mentioned problems, and uses a resist layer made of a material that does not dissolve in a liquid plating solution capable of obtaining high gloss plating, and finally does not remove the resist layer after plating. Semiconductor device and semiconductor device substrate manufacturing method capable of reliably forming high-gloss plating only at necessary locations while making manufacturing efficient as part of the device exterior, and semiconductor devices obtained by these manufacturing methods and An object is to provide a substrate for a semiconductor device.

  The semiconductor device according to the present invention has a metal part to be a semiconductor element mounting part or an electrode part, a surface metal layer is formed on the surface of the metal part by plating, and mounting of semiconductor elements on the metal part surface side, wiring, sealing. In a semiconductor device that is sealed with a stopper and the back side of the metal part is exposed at the bottom of the device, the semiconductor device includes a resist layer formed corresponding to a non-arranged part of the metal part, and the surface metal layer However, the surface glossiness is formed as a glossy plating having a GAM glossiness of 1.0 or more, and the resist layer is an insulating material having resistance to dissolution with respect to a plating solution used for plating the surface metal layer. It is formed, and is tightly integrated with the sealing material along with the sealing with the sealing material, and becomes a part of the apparatus exterior.

  As described above, according to the present invention, the resist layer formed on the non-arranged portion of the metal portion prior to the formation of the metal portion of the semiconductor device in which the metal portion is exposed at the bottom is formed on the surface of the metal portion. By having resistance to the plating solution used for plating the surface metal layer, the resist layer does not change in quality against the plating solution. The application range as a semiconductor device can be widened by applying high-gloss plating as a metal layer and using the surface metal layer as a light reflecting portion. In addition, since the resist layer is left without being removed, waste can be reduced by the amount of the resist layer, and the remaining resist layer can be replaced with a part of the sealing material to form an exterior of the apparatus. The amount of stop material used can be reduced. Furthermore, it is not necessary to consider the removal process of the resist layer, and it is suitable for the removal process as long as it has resistance to the plating solution in addition to the property of preventing the adhesion of the liquid agent to other than the necessary portions to be provided as the resist layer. It is possible to use any material that does not exist, which increases the degree of freedom in selecting the material that forms the resist layer, leading to cost reduction.

  In addition, in the semiconductor device according to the present invention, the metal part is formed in a shape having a thicker part than the resist layer and having a protruding part at the upper edge, as necessary, and the protruding part is sealed with a sealing material. Along with this, the resist layer and the sealing material are sandwiched and fixed.

  As described above, according to the present invention, the overhanging portion that protrudes toward the resist layer is formed at the upper edge of the metal portion thicker than the resist layer, and the overhanging portion is sandwiched and fixed between the resist layer and the sealing material. Even if an external force is applied to the back surface side of the metal portion to separate the device exterior from the device exterior, the resist layer and the sealant are made of a resist layer and a sealant. The overhanging part sandwiched between them will exert a great resistance to prevent the movement and dropout of the metal part, and the yield as well as the deviation of the metal part can be improved, and the strength as a semiconductor device can be increased, Durability during use and reliability of device operation are also improved.

  In addition, in the semiconductor device according to the present invention, the metal part is formed as a thickness equal to or less than the resist layer as necessary, the surface metal layer has a thickness exceeding the resist layer surface, and an upper end. It is formed as a shape having an overhanging portion on the periphery, and the overhanging portion is sandwiched and fixed between the resist layer and the sealing material along with sealing with the sealing material.

  As described above, according to the present invention, the overhanging portion that protrudes toward the resist layer side is formed at the upper edge of the surface metal layer formed beyond the resist layer, and the overhanging portion is sandwiched between the resist layer and the sealing material. Even if an external force is applied to the metal part back side from the apparatus exterior, the apparatus exterior composed of the resist layer and the sealing material is firmly integrated with the surface metal layer and the metal part. The overhanging part sandwiched between the resist layer and the sealing material exerts a great resistance to prevent the metal part from moving or falling off, eliminating the deviation of the metal part and improving the yield, and the semiconductor The strength of the device can be increased, and the durability during use and the reliability of device operation can also be improved.

  The substrate for a semiconductor device according to the present invention is used for manufacturing a semiconductor device in which a metal portion serving as a semiconductor element mounting portion or an electrode portion is exposed at the bottom of the device. In a semiconductor device substrate in which a resist layer corresponding to a non-arranged portion of the metal portion is formed and a surface metal layer is formed on the surface of the metal portion by plating, the surface metal layer has a surface glossiness of GAM. It is formed as a glossy plating having a glossiness of 1.0 or more, and the resist layer is formed of an insulating material having resistance to dissolution with respect to a plating solution used for plating of the surface metal layer.

  As described above, according to the present invention, the resist layer formed on the metal part non-arranged portion on the mother board in the semiconductor device substrate has resistance to the plating solution used for plating the surface metal layer on the metal part surface. In addition, while realizing high-gloss plating only on necessary portions, the substrate for a semiconductor device is provided without being removed after plating and with the resist layer being placed between the metal parts on the mother substrate. Thus, there is always a resist layer between the metal parts, and the metal parts are in contact with each other, and the metal parts are held not only in the matrix substrate but also in the resist layer to prevent the metal parts from being displaced, and the manufactured semiconductor device Yield can be improved. Moreover, it is not necessary to consider the removal process of the resist layer, and in addition to the property of preventing the liquid agent from adhering to other than the necessary portions to be provided as the resist layer, it is suitable for the removal process as long as it has resistance to the plating solution. Any material that can be used can be used, which increases the degree of freedom in selecting the material that forms the resist layer. In addition, when manufacturing the semiconductor device, the resist layer is tightly integrated with the sealing material through sealing with the sealing material to form a part of the exterior of the device, and the sealing material is in close contact with all but the back side of the metal part. This saves time and effort and reduces the amount of sealing material used.

  In the method for manufacturing a substrate for a semiconductor device according to the present invention, a resist layer corresponding to a non-arranged portion of the metal portion is formed on the conductive mother substrate, and then the metal portion is formed by electroforming. Furthermore, in the method of manufacturing a semiconductor device substrate, a surface metal layer is formed by plating on the surface of the metal portion to obtain a semiconductor device substrate capable of mounting and wiring a semiconductor element on the metal portion surface side. Is formed by gloss plating with a surface glossiness of 1.0 or more in terms of GAM gloss, and the resist layer is an insulating material having resistance to dissolution with respect to a plating solution used for plating the surface metal layer And is left without being removed after the formation of the metal part and the surface metal layer.

  As described above, according to the present invention, a resist layer having resistance to the plating solution used for plating the surface metal layer on the surface of the metal part is formed on the metal part non-arranged part on the base substrate constituting the semiconductor device substrate. By realizing high-gloss plating only on the necessary parts, leaving the resist layer after plating and leaving the resist layer between the metal parts on the matrix substrate, the resist layer is always between the metal parts The metal part is in contact with the metal part, and the metal part is held not only by the matrix substrate but also by the resist layer to prevent the metal part from being displaced after the formation, thereby improving the yield of the manufactured semiconductor device. Moreover, it is not necessary to consider the removal process of the resist layer, and in addition to the property of preventing the liquid agent from adhering to other than the necessary portions that should be provided as the resist layer, it is suitable for the removal process if it has resistance to the plating solution Any material that can be used can be used, which increases the degree of freedom in selecting the material that forms the resist layer. In addition, when manufacturing the semiconductor device, the resist layer is tightly integrated with the sealing material through sealing with the sealing material to form a part of the exterior of the device, and the sealing material is in close contact with all but the back side of the metal part. This saves time and effort and reduces the amount of sealing material used.

  Also, in the method for manufacturing a substrate for a semiconductor device according to the present invention, the metal portion is formed in a shape having a thicker portion than the resist layer and having an overhanging portion at the upper edge.

  As described above, according to the present invention, the overhanging portion that protrudes toward the resist layer is formed on the periphery of the upper end portion of the metal portion that exceeds the resist layer, and the contact area between the metal portion and the resist layer is increased, thereby providing a semiconductor device. The holding performance of the metal part by the resist layer in the substrate for use is improved, and the metal part can be reliably held without deviation by the resist layer. In addition, when the semiconductor device is manufactured, the overhanging portion is sandwiched and fixed between the resist layer and the sealing material as the resist layer is tightly integrated with the sealing material after sealing with the sealing material. The device exterior consisting of the layer and the sealing material is integrated with the metal part, so that the resist layer and the seal are sealed even if an external force is applied to the back side of the metal part in the semiconductor device after sealing. The overhanging part sandwiched between the materials will exert a great resistance to prevent the metal part from moving or falling off, and the yield of the semiconductor device can be improved by eliminating the deviation of the metal part, etc. The strength of the machine can be increased, and the durability during use and the reliability of device operation can also be improved.

  Further, in the method for manufacturing a substrate for a semiconductor device according to the present invention, the metal part is formed as a thickness equal to or smaller than the resist layer as necessary, and the surface metal layer has a thickness exceeding the resist layer surface. And a shape having an overhanging portion on the periphery of the upper end.

  As described above, according to the present invention, the overhanging portion that protrudes toward the resist layer side is formed at the periphery of the upper end portion of the surface metal layer that exceeds the resist layer, thereby increasing the contact area between the metal portion and the surface metal layer and the resist layer. As a result, the holding performance of the metal part by the resist layer in the semiconductor device substrate is improved, and the metal part can be securely held without deviation by the resist layer. In addition, when the semiconductor device is manufactured, the overhanging portion is sandwiched and fixed between the resist layer and the sealing material as the resist layer is tightly integrated with the sealing material after sealing with the sealing material. Even if an external force is applied to the back side of the metal part on the back side of the metal part in the semiconductor device after sealing, the device exterior composed of the layer and the sealing material is integrated with the surface metal layer and the metal part. The overhanging part sandwiched between the layer and the sealing material exerts a great resistance to prevent the metal part from moving or falling off, thereby eliminating the deviation of the metal part and improving the yield of the semiconductor device. The strength of the semiconductor device can be increased, and the durability during use and the reliability of device operation can also be improved.

  Further, in the method for manufacturing a substrate for a semiconductor device according to the present invention, if necessary, the surface metal layer is formed by plating using a high cyan strong alkali plating solution, and the resist layer is resistant to dissolution against strong alkali. It is formed of a material having properties.

  As described above, according to the present invention, the resist layer is formed of a material that does not dissolve in strong alkali, and the surface metal layer is formed by plating with a plating solution containing high cyan, thereby preventing the resist layer from being deteriorated in the plating process. By reliably demonstrating the plating limiting function of the resist layer, it is possible to appropriately apply high gloss plating only to the necessary part of the metal part, and the surface metal layer can be used as a light reflecting part, etc. As a result, the resist layer is not affected by the plating solution, and the resist layer can be reliably left as it is. The holding state can be maintained, and it can be appropriately used as a part of the exterior of the apparatus through close integration with the sealing material in the sealing process in manufacturing the apparatus.

  The semiconductor device manufacturing method according to the present invention includes mounting a semiconductor element on a metal part, wiring, and sealing with a sealing material on a semiconductor device substrate, and sealing the resist layer with a sealing material. After the sealing material is tightly integrated with the sealing material, the matrix substrate covering the back surface side of the metal part is removed to obtain a state in which the back surface side of the metal part is exposed at the bottom of the apparatus.

  As described above, according to the present invention, the resist layer formed on the metal part non-arranged portion of the substrate for a semiconductor device is left after the plating of the surface metal layer, and the resist layer is placed between the metal parts and sealed with the sealing material. By stopping and obtaining a semiconductor device, waste can be reduced by the amount of the resist layer left without being removed, and the device exterior can be replaced by replacing the remaining resist layer with a part of the sealing material. The amount of sealing material used can be reduced. Furthermore, by maintaining the integrated state of the resist layer and the metal part to the end, even if an external force is applied to the back side of the metal part when it is removed from the exterior of the metal part when the mother board is removed, sealing is performed. The resist layer together with the stopper prevents the movement of the metal portion, and the yield reduction of the semiconductor device due to the displacement of the metal portion can be suppressed.

  Further, according to the method for manufacturing a semiconductor device according to the present invention, the mother substrate is made of copper or a copper alloy as necessary, and the mother substrate is dissolved and removed with an etching solution after sealing with a sealing material. .

  As described above, according to the present invention, after sealing with a sealing material such as a metal part or a semiconductor element, the mother board made of copper or copper alloy is dissolved and removed, and the back side of the metal part is exposed at the bottom of the apparatus. Therefore, removal of the mother board can be performed without applying stress to the semiconductor device such as the metal part or resist layer without adding external force to the mother board, thereby preventing the occurrence of defects in the semiconductor device. Yield can be improved. In addition, it is possible to remove the base substrate only by immersing it in an etching solution, the device manufacturing process can be executed continuously, the substrate removal process can be automated and unmanned easily, and it is suitable for mass production of devices. .

It is sectional drawing and the bottom view of the semiconductor device which concerns on one Embodiment of this invention. It is sectional drawing of the board | substrate for semiconductor devices which concerns on one Embodiment of this invention. It is a resist layer formation state explanatory view in the substrate for semiconductor devices concerning one embodiment of the present invention. It is metal part formation state explanatory drawing in the board | substrate for semiconductor devices which concerns on one Embodiment of this invention. It is explanatory drawing of the surface metal layer formation state and bottom side resist layer removal state in the board | substrate for semiconductor devices which concerns on one Embodiment of this invention. It is semiconductor device manufacture state explanatory drawing using the board | substrate for semiconductor devices which concerns on one Embodiment of this invention. It is light reflection state explanatory drawing in the surface metal layer in the semiconductor device concerning one embodiment of the present invention. It is other surface metal layer formation state explanatory drawing in the board | substrate for semiconductor devices which concerns on one Embodiment of this invention. It is another metal part formation state and wire connection state explanatory drawing in the board | substrate for semiconductor devices which concerns on one Embodiment of this invention.

Hereinafter, a semiconductor device substrate according to an embodiment of the present invention will be described with reference to FIGS.
In each of the drawings, the semiconductor device 1 according to the present embodiment includes a metal part 11 formed as a semiconductor element mounting part 11a or an electrode part 11b and a resist layer 12 formed corresponding to a non-arranged part of the metal part 11. A surface metal layer 13 formed on the surface of the metal part 11 in a high gloss state by plating, a semiconductor element 14 mounted on the semiconductor element mounting part 11a of the metal part 11, and the semiconductor element 14 and the metal part 11 It is a structure provided with the wire 15 which electrically connects the electrode part 11b of them, and the sealing material 16 which covers and seals the metal element 11 containing the semiconductor element 14 and the wire 15, and the surface side of the resist layer 12. .

  The semiconductor device 1 is in a state where the back side of the metal part 11 is exposed as an electrode, a heat radiating pad or the like at the bottom (see FIG. 1B), and appears as a part of the back side of the exposed metal part 11 and the exterior of the device. In this configuration, the back side of the resist layer 12 is located on substantially the same plane. Except for the bottom of the semiconductor device 1, the side faces are the sealing material 16 and the resist layer 12 that form the exterior of the device, and the top surface is the state where only the sealing material 16 appears. Depending on the arrangement of the metal part 11, the side part of the metal part 11 may appear on the side surface of the semiconductor device 1 together with the sealing material 16 and the resist layer 12.

  The semiconductor device 1 is manufactured using a semiconductor device substrate 10 in order to increase the manufacturing efficiency. As shown in FIG. 2, a semiconductor device substrate 10 used for manufacturing the semiconductor device 1 includes a mother substrate 17 made of a conductive material, the metal portion 11, a resist layer 12, and a surface metal layer 13. It is the structure provided with.

  The semiconductor device substrate 10 has a resist layer 12 corresponding to the non-arranged portion of the metal portion 11 formed on the base substrate 17, and then the metal portion 11 is formed by electroforming, and the surface of the metal portion 11 is plated by plating. The semiconductor device 14 is manufactured by forming the surface metal layer 13. When the semiconductor device is manufactured, the semiconductor element 14 is mounted on the surface side of the metal portion 11, the wiring, and the sealing material. 16 is used, and after the sealing, the mother substrate 17 is separated and removed from the semiconductor device portion to obtain a semiconductor device.

  The matrix substrate 17 is formed of a conductive metal plate (thickness: about 0.1 mm) such as stainless steel (SUS430, etc.), aluminum, copper or the like, and has a resist layer 12 and a metal portion 11 on the surface side. In addition, a resist layer 18 and a protective film 19 are disposed on the back side to form a substrate 10 for a semiconductor device, which is used for manufacturing a semiconductor device. When the metal part 11 is formed by electroforming, the energization is performed through the matrix substrate 17 so that the energized portion not covered with the resist layer 12 on the surface of the matrix substrate 17 is electroformed. The part 11 will be formed. Also, when the surface metal layer 13 is plated, energization is performed through the matrix substrate 17 when electrolytic plating is used.

  In the manufacturing process of the semiconductor device using the semiconductor device substrate 10, the metal part 11 and the resist layer 12 are covered with the sealing material 16 (see FIG. 6B), and the metal part 11 and the resist are covered with the matrix substrate 17. If sufficient strength is obtained without supporting the layer 12, the matrix substrate 17 is separated and removed from these layers (see FIG. 6C). When the mother substrate 17 is made of stainless steel, a method is adopted in which a force is applied to physically remove the substrate 17 from the semiconductor device side, and when the mother substrate 17 is made of copper or the like, it is dissolved using a chemical solution. An etching method for removing is used. In the case of etching, it is preferable to use an etching solution having a selective etching property that dissolves copper or the like forming the base substrate 17 but hardly affects the material such as nickel of the metal part 11 (less corrosive).

  When the mother substrate 17 is removed, the semiconductor device mounting portion 11a and the electrode portion 11b of the metal portion 11 and the back surfaces of the resist layer 12 are exposed on the same plane at the bottom of the semiconductor device.

  The metal part 11 is made of nickel or copper suitable for electroforming, or a nickel alloy such as nickel-cobalt, and is formed by electroforming on a portion of the matrix substrate 17 where the resist layer 12 is not present. In the semiconductor device substrate 10, the metal portion 11 is the number of semiconductor devices to be manufactured on the surface of the base substrate 17 with a combination of the semiconductor element mounting portion 11 a and a plurality of electrode portions 11 b arranged in the vicinity thereof as one unit. Therefore, the combination is formed in a form in which a large number of the combinations are aligned.

  The metal portion 11 has a thickness exceeding the thickness of the resist layer 12 (for example, a thickness of about 60 to 80 μm), and a shape having a substantially bowl-shaped protruding portion 11c protruding toward the resist layer 12 on the periphery of the upper end. It is preferable to be formed as The overhanging portion 11c is not limited by the resist layer 12 by continuing electroforming after the metal portion 11 is formed to the thickness of the resist layer 12 during electroforming, and adding growth of the metal portion in the thickness direction. By proceeding also in this direction, a shape projecting from the upper end of the metal part 11 beyond the resist layer 12 to the resist layer 12 side can be obtained. The overhanging portion 11 c is sandwiched and fixed between the resist layer 12 and the sealing material 16 along with the sealing with the sealing material 16.

  In addition, the metal part 11 is mostly formed of nickel or a nickel alloy suitable for electroforming, but the back surface side of the metal part 11 can be appropriately soldered when the semiconductor device is mounted. In addition, a thin film 11d such as a metal having better solder wettability than a main material portion such as nickel formed by electroforming, such as gold, tin, palladium, solder (tin-lead alloy), or the like is disposed. The thickness of the thin film 11d is preferably about 0.05 to 5 μm.

  When the metal part 11 is formed, a thin film 11d is previously formed by plating or the like on a portion without the resist layer 12 on the base substrate 17 (see FIG. 4B), and then electroformed further on the thin film 11d. As a result, a main material portion such as nickel is formed. The thin film 11d can be given a function of preventing erosion degradation of the metal part 11 by the etching solution when the mother substrate 17 is removed by etching. In this case, a thin film of gold, silver, or lead is provided. Is preferred.

  The thin film formation on the back surface side of the metal part 11 is not limited to the formation of the main material part of the metal part 11 by electroforming in the case of the purpose of the soldering countermeasure, but after the completion of the semiconductor device 1. Alternatively, a thin film may be formed on the exposed back side of the metal part 11 by plating.

  The resist layer 12 is formed of an insulating material having resistance to a strong alkaline plating solution used for plating of the surface metal layer 13, and the metal portion 11 which is set in advance on the matrix substrate 17 is not disposed. The semiconductor device 10 is configured to correspond to the portion and is left without being removed even after the formation of the metal portion 11 and the surface metal layer 13 and forms a part of the semiconductor device substrate 10. Further, in the manufacture of a semiconductor device, the resist layer 12 is closely integrated with the sealing material 16 along with the sealing with the sealing material 16 and forms a part of the exterior of the semiconductor device 1 finally obtained. (See FIG. 1).

  This resist layer 12 is disposed on the matrix substrate 17 prior to the formation of the metal portion 11. Specifically, a photosensitive material such as a solder resist (epoxy resin) resistant to strong alkali or polyimide is used as a matrix. Exposure by ultraviolet irradiation with a mask film having a predetermined pattern corresponding to the position of the metal part 11 of the semiconductor device 1 placed in close contact with the mold substrate 17 so as to have a predetermined thickness, for example, about 50 μm. Is formed in a shape corresponding to the non-arranged portion of the metal portion 11 through processing such as curing (see FIG. 3C) and development for removing the photosensitive material in the non-irradiated portion. The resist layer 12 has sufficient physical strength comparable to the encapsulant 16, and even if the resist layer 12 is used as a part of the exterior of the semiconductor device 1 by replacing a part of the encapsulant 16, the resist layer 12 is sufficiently inside. Even when the matrix substrate 17 is physically removed by applying a force such as peeling off the matrix substrate 17 from the semiconductor device side, it is integrated with the metal part 11 and the sealing material 16 without breakage or the like. Will be maintained.

  Note that the resist layer 12 is not limited to a photosensitive resist, and a coating that does not change with respect to strong alkali and can provide a high-strength coating film is not disposed on the matrix substrate 17. In addition, it can be formed by coating so as to have a required coating thickness by electrodeposition coating or the like.

  On the other hand, apart from the resist layer 12, a resist layer 18 is also formed on the back surface side of the mother board 17, and a protective film 19 having resistance to the plating solution is disposed so as to cover the resist layer 18. It is the structure provided (refer FIG. 4). Since the resist layer 18 on the back side is covered with the protective film 19, it may be made of a material that is not resistant to the plating solution. Specifically, it can be dissolved and removed without affecting the resist layer 12 on the front side in the cured state. A resist material, for example, an alkali-development type photosensitive film resist having a thickness of about 50 μm is disposed by thermocompression bonding or the like, and is subjected to treatment such as exposure by ultraviolet irradiation without a mask as it is, and is cured and formed over the entire back surface. be able to. A resist layer is formed of a material that is not resistant to the plating solution not only on the back surface side but also on the surface of the mother board 17, and a protective film is provided to cover the resist layer, so that the plating solution as a whole is formed. It is good also as a structure made into the resist layer which has the tolerance to the. In this case, the protective film may be disposed before the formation of the metal portion, or may be disposed after the formation of the metal portion and before the formation of the surface metal layer.

  The surface metal layer 13 is made of gold, silver, or the like that is excellent in bondability with a gold wire or the like that forms the wire 15 for wiring, or aluminum that easily imparts gloss, and the surface gloss is 1 in terms of GAM gloss. It is formed as a glossy plating of 0 or more. The surface metal layer 13 can also be formed by sputtering or vapor deposition.

  The surface metal layer 13 has a predetermined thickness on the surface of the metal part 11, for example, a thickness of about 2.0 to 4.0 μm, for example, by putting each metal part 11 together with the matrix substrate 17 into a plating bath. It is formed as a plating. In the case of silver plating, the plating solution used in the plating bath is a highly cyan strong alkali (silver cyanide or silver cyanide potassium solution) and contains a brightener, so that the function of the brightener is fully exhibited. The surface metal layer is formed as a silver plating exhibiting a high glossiness of GAM glossiness of 1.0 or more. When the surface metal layer 13 is plated, the back surface side of the matrix substrate 17 is covered with the protective film 19, so that the adhesion of the plating and the dissolution of the resist by the plating solution do not occur (see FIG. 5A). .

  When the surface metal layer 13 is silver-plated, a strong alkaline plating solution is used. When gold plating is used, a weak acid plating solution is used. For example, a plating solution corresponding to the plating metal is used. The GAM glossiness of the surface metal layer 13 is a value measured using a device capable of measuring this, for example, VSR400 manufactured by Nippon Denshoku Industries Co., Ltd., and is usually 1.0 or more. The value represents a high gloss state.

  When forming the plating of the surface metal layer 13, if the metal part 11 is nickel, the plating is difficult to adhere. Therefore, usually, before the surface metal layer 13 is plated, the surface of the metal part 11 is preliminarily plated (copper strike). Or silver strike or gold strike) to improve the adhesion of the surface metal layer 13 to the metal portion 11.

  Further, the surface metal layer 13 is formed on the surface of the metal part 11 including the overhang part 11c when the overhang part 11c is formed in the metal part 11, but instead of forming the overhang part 11c with the metal part 11, FIG. As shown in FIG. 8, the surface metal layer 23 may be formed thicker, and the overhanging portion 23a to the resist layer side may be formed by the surface metal layer 23. Specifically, the metal portion is formed on the base substrate 27. 21 is formed so as not to exceed the thickness of the resist layer 22, while the surface metal layer 23 is thickly formed on the surface of the metal portion 21, and the plating is allowed to grow in each direction capable of growing. It can be formed in a shape protruding from the portion 21 toward the resist layer 22 side.

  The semiconductor element 14 is a so-called chip in which a fine electronic circuit is formed, and is mounted on the semiconductor element mounting part 11a by being bonded to the metal part 11. A wire 15 for wiring (bonding) made of a conductive wire material such as gold is provided on an electrode provided on the surface of the semiconductor element 14, and an electrode part 11 b formed independently of the semiconductor element mounting part 11 a among the metal part 11. The semiconductor element 14 and the electrode portion 11b are electrically connected to each other.

  The sealing material 16 is a thermosetting epoxy resin or the like with high physical strength. When the semiconductor element 14 is a light emitting element such as an LED, a translucent material is used, and the semiconductor element on the surface side of the metal part 11 is used. 14 and the wire 15 are covered, and the structurally weak parts such as the semiconductor element 14 and the wire 15 are isolated from the outside.

  The sealing process using the sealing material 16 is performed on the substrate 10 for a semiconductor device, and a mold that serves as an upper mold is formed in a range of a semiconductor device having the metal portion 11 and the like on the surface side of the mother substrate 17. Then, the sealing material 16 before curing is press-fitted between the mold and the base substrate 17 and the sealing material 16 is cured, thereby completing the sealing. However, in the sealing process, since the combination of the semiconductor element mounting portion 11a and the plurality of electrode portions 11b, which are one semiconductor device, is uniformly sealed while being aligned, the semiconductor device is a sealing material. 16 are connected in a large number.

  Next, the manufacturing process of the semiconductor device substrate according to the present embodiment and the semiconductor device using the same will be described. First, a resist is disposed on both surfaces of the copper mother substrate 17 (see FIGS. 3A and 3B). A photosensitive material such as a solder resist or polyimide resistant to strong alkali is closely attached to the surface of the matrix substrate 17 so as to have a predetermined thickness (for example, about 50 μm). A photosensitive resist that can be dissolved and removed with a weak alkaline agent that does not affect the resist layer 12 on the surface side in the cured state may be disposed on the back side of the matrix substrate 17 in the same manner as the surface side.

  The photosensitive resist on the surface side of the matrix substrate 17 is exposed by ultraviolet irradiation with a mask film 50 having a predetermined pattern corresponding to the position of the metal part of the semiconductor device (see FIG. 3C). ), A resist layer 12 corresponding to the non-arranged portion of the metal portion is cured and formed through a process such as development (see FIG. 4A). In addition, for the photosensitive resist on the back surface side, the resist layer 18 is preferably cured and formed over the entire back surface through a process such as exposure to the entire surface as it is (see FIG. 3C). Furthermore, a protective film 19 having resistance to strong alkali is preferably disposed in close contact with the back surface so as to cover the resist layer 18 (see FIG. 4A).

  When the resist layers 12 and 18 are formed and the protective film 19 is disposed, the known surface oxide film removal or surface activation is performed on the exposed portion of the surface of the base substrate 17 that is not covered with the resist layer 12 as necessary. After the processing, a gold thin film 11d for improving solder wettability is formed on the exposed portion by plating or the like with a thickness of 0.05 to 5 μm, for example (see FIG. 4B). And on this thin film 11d, nickel is laminated | stacked by electroforming and the metal part 11 is formed.

  The metal portion 11 is formed to have a thickness exceeding the thickness of the resist layer 12 (for example, a thickness of about 60 to 80 μm), and a substantially bowl-shaped overhang portion that protrudes toward the resist layer 12 at the upper end periphery of the metal portion 11. 11c is also formed (see FIG. 4C). The metal part 11 is arranged on the surface of the base substrate 17 in such a number that the number of semiconductor devices is the same as the number of semiconductor devices to be manufactured, with a combination of the semiconductor element mounting part 11a and a plurality of electrode parts 11b arranged in the vicinity thereof as one unit It will be formed in the form arranged in the state.

  When the metal part 11 having a desired thickness and shape is obtained, the surface metal layer 13 made of high-gloss silver plating is formed on the surface of the metal part 11 by a predetermined thickness by, for example, putting the matrix substrate 17 together with the plating bath. For example, it is formed to have a thickness of about 2.0 to 4.0 μm (see FIG. 5A). The plating bath uses a high-cyanide and strong alkali plating solution, but the resist layer 12 has sufficient resistance to strong alkali, so it does not deteriorate and maintains its function as a resist layer. And plating adhesion to places other than required parts, such as the metal part 11, can be prevented. Further, when the surface metal layer 13 is plated, the back surface side of the matrix substrate 17 is covered with the protective film 19, so that no adhesion of plating or dissolution of the resist layer 18 by the plating solution occurs.

  After the surface metal layer 13 is formed, the protective film 19 and the resist layer 18 on the back side of the matrix substrate 17 are removed (see FIGS. 5B and 5C), whereby the semiconductor device manufacturing substrate 10 is completed. The resist layer 18 can be removed by a method such as swelling removal with a weak alkali solution. In this case, the resist layer 12 on the surface side does not change because it has resistance to strong alkali. Alternatively, the protective film 19 and the resist layer 18 on the back surface side of the mother substrate 17 may be left without being removed, and the semiconductor device manufacturing process may be shifted to the semiconductor device manufacturing process.

  Next, manufacturing of a semiconductor device using the obtained semiconductor device manufacturing substrate 10 will be described. First, the semiconductor element 14 is bonded onto the semiconductor element mounting portion 11a in the metal portion 11 of the semiconductor device manufacturing substrate 10. In addition, a wire 15 such as a gold wire is bonded to the electrode on the surface of the semiconductor element 14 and the corresponding electrode part 11b, and the semiconductor element 14 and each electrode part 11b are electrically connected. (See FIG. 6A). The electrical connection by this wiring is performed by a known ultrasonic bonding apparatus or the like. Since the surface metal layer 13 is formed on the surface of the electrode portion 11b, the bonding with the wire 15 can be ensured, and the connection reliability can be improved.

  When the connection between the semiconductor element 14 and each electrode portion 11b is completed, the range of the semiconductor device such as the metal portion 11 on the surface side of the mother board 17 is sealed with a sealing material 16 such as a thermosetting epoxy resin. Then, the semiconductor element 14 and the wires 15 are protected from the outside (see FIG. 6B). More specifically, the surface side of the base substrate 17 is attached to an upper mold, and the base substrate 17 plays the role of a lower mold, and before the hardening material that becomes the sealing material 16 in the mold. Sealing is performed in the process of press-fitting the epoxy resin, and a large number of combinations of the semiconductor element mounting portion 11a and the plurality of electrode portions 11b, which are one semiconductor device, remain aligned on the mother substrate 17. It is sealed uniformly and appears in a state where a large number of semiconductor devices are connected.

  When the semiconductor devices connected in a large number are obtained, the base substrate 17 is removed to obtain a state in which the back side of the metal portion 11 is exposed at the bottom of each semiconductor device (see FIG. 6C). For removing the mother substrate 17 made of copper, a method in which the mother substrate 17 is immersed in an etching solution and dissolved is used. Thereby, an excessive force is not applied to the semiconductor device side, and there is no adverse effect associated with the removal of the matrix substrate 17. Note that, when a stainless steel material having excellent strength and peelability is used for the mother board, a method of removing the mother board by physically peeling the mother board from the semiconductor device side is used as a method for removing the mother board. You can also.

  At the bottom of the semiconductor device from which the matrix substrate 17 has been removed, the exposed back surface side of the metal portion 11 and the remaining back surface side of the resist layer 12 are in the same plane. After removing the mother substrate 17, a plurality of connected semiconductor devices are separated one by one to complete the semiconductor device 1.

  In the obtained semiconductor device 1, the upper end periphery of the metal part 11 is formed as a projecting part 11 c so as to project in a substantially bowl shape, and the sealing material 16 in which the projecting part 11 c is cured in a sealed state with the sealing material 16 Since it is sandwiched and fixed between the resist layers 12, the overhanging portion 11 bites between the sealing material 16 that is intimately integrated with the resin and firmly integrated with the resist layer 12, and resistance to external force applied to the metal portion 11. When the stainless steel material is used for the mother board 17 and the mother board 17 is physically peeled off from the semiconductor device side and removed, the metal part 11 is separated from the outer surface of the device. Even if an external force is applied, the overhanging portion 11 can prevent the metal portion 11 from moving or dropping, and can eliminate the displacement of the metal portion 11 with respect to other portions, thereby improving the yield during manufacturing. An elevated strength of the semiconductor device, the reliability of the durability and the semiconductor device operation in use is also enhanced.

  When the semiconductor element 14 of the semiconductor device 1 is a light emitting element such as an LED and the sealing material 16 is made of a resin material having translucency, when the light emitting portion 14a in the semiconductor element 14 emits light, as shown in FIG. Besides, the emitted light directly reaches the outside of the device through the sealing material 16 portion, and the light reflected by the highly glossy surface metal layer 13 reaches the outside of the device through the sealing material 16 portion. The light emission intensity of the device 1 can be increased.

  Thus, in the semiconductor device according to the present embodiment, the resist layer 12 formed on the non-arranged portion of the metal portion 11 prior to the formation of the metal portion 11 in the semiconductor device substrate 10 has a surface on the surface of the metal portion 11. Since it has resistance to the plating solution used for plating of the metal layer 13, the resist layer 12 does not deteriorate with respect to the plating solution, and it is suitable for only necessary portions such as the surface of the metal portion 11 while reliably preventing plating on other portions. The high-gloss plating as the surface metal layer 13 is applied to the surface metal layer 13 so that the surface metal layer 13 can be used as a light reflecting portion. Further, since the resist layer 12 is left without being removed, the manufacturing waste can be reduced by the amount of the resist layer 12, and the remaining resist layer 12 can be replaced with a part of the sealing material 16. By making the exterior, the amount of the sealing material 16 used can be reduced. Furthermore, it is not necessary to consider the removal process when using the resist layer 12, and in addition to the property of preventing the liquid agent adhesion and the like other than the necessary portions as the resist layer 12, in addition to having the resistance to the plating solution, A material that is not suitable for the removal process can be used, and the degree of freedom in selecting the material forming the resist layer 12 can be expanded, leading to a reduction in cost.

  In the manufacture of the semiconductor device according to the embodiment, the semiconductor device is manufactured using the semiconductor device substrate 10 in which the metal portion 11 and the resist layer 12 are disposed on the mother substrate 17. In addition, a semiconductor device that forms a metal part at a desired position and a resist layer that can prevent plating adhesion other than to become a surface metal layer is not removed in the manufacturing process and forms a part of the device exterior. For example, a manufacturing method in which the metal part and the resist layer are disposed without using the mother substrate may be adopted.

  In the substrate for a semiconductor device according to the above embodiment, a high cyan strong alkali solution is used as a plating solution used for silver plating as the surface metal layer 13 on the surface of the metal part 11. In addition, recently proposed plating solutions containing acids such as organic sulfonic acids, soluble salts of silver, and sulfide compounds, acids such as organic sulfonic acids, soluble salts of silver, and thiocrown ether compounds, etc. A non-cyan type plating solution such as a plating solution containing alkali, silver, a soluble salt of silver, an alkaline salt of sulfite, and a hydantoin derivative, and a brightener corresponding to the plating solution if necessary. For example, a silver plating exhibiting a high glossiness of 1.0 or more in GAM glossiness may be formed as the surface metal layer 13 by using it together.

  Further, in the substrate for a semiconductor device according to the above embodiment, gold, silver or the like excellent in bondability with the wire 15 for wiring as the surface metal layer 13 on the surface of the metal portion 11, or aluminum which easily gives gloss. In addition, the surface metal layer 13 of the above-described embodiment is used so that the metal portion 31 has a high gloss surface with a metal such as gold, silver, or aluminum. It is also possible to adopt a configuration (see FIG. 9) that is formed on an exposed portion of the base substrate 37 that is not covered with the resist layer 32 by the same technique as described above. And the reliability of the connection can be improved, and the light can be efficiently reflected on the surface of the highly glossy metal part 31.

DESCRIPTION OF SYMBOLS 1 Semiconductor device 10 Semiconductor device substrate 11, 21, 31 Metal part 11a Semiconductor element mounting part 11b Electrode part 11c, 23a Overhang part 11d Thin film 12, 22, 32 Resist layer 13, 23 Surface metal layer 14 Semiconductor element 14a Light emitting part 15 35 Wire 16 Sealing material 17, 27, 37 Master substrate 18 Resist layer 19 Protective film 50 Mask film

Claims (10)

It has a metal part to be a semiconductor element mounting part or an electrode part, a surface metal layer is formed by plating on the surface of the metal part, semiconductor element mounting and wiring on the metal part surface side, sealing with a sealing material is performed, In the semiconductor device in which the back side of the metal part is exposed at the bottom of the device,
Comprising a resist layer formed corresponding to the non-arranged part of the metal part,
The surface metal layer is formed as a gloss plating with a surface glossiness of 1.0 or more in terms of GAM glossiness,
The resist layer is formed of an insulating material having resistance to dissolution with respect to a plating solution used for plating of the surface metal layer, and is tightly integrated with the sealing material along with sealing with the sealing material, A semiconductor device characterized by being a part of the device exterior. The semiconductor device according to claim 1,
The metal part is formed as a shape that is thicker than the resist layer and has a protruding part at the upper edge.
The semiconductor device is characterized in that the overhanging portion is sandwiched and fixed between the resist layer and the sealing material along with sealing with the sealing material. The semiconductor device according to claim 1,
The metal part is formed as a thickness of the resist layer or less,
The surface metal layer has a thickness exceeding the surface of the resist layer, and is formed in a shape having an overhang at the upper edge;
The semiconductor device is characterized in that the overhanging portion is sandwiched and fixed between the resist layer and the sealing material along with sealing with the sealing material. Resist layer corresponding to the metal part and the non-arranged part of the metal part on a conductive base substrate used for manufacturing a semiconductor device in which a metal part serving as a semiconductor element mounting part or an electrode part is exposed at the bottom of the apparatus In the substrate for a semiconductor device in which a surface metal layer is formed by plating on the surface of the metal part,
The surface metal layer is formed as a gloss plating with a surface glossiness of 1.0 or more in terms of GAM glossiness,
The substrate for a semiconductor device, wherein the resist layer is made of an insulating material having resistance to dissolution with respect to a plating solution used for plating the surface metal layer. After forming a resist layer corresponding to the non-arranged portion of the metal portion on the conductive base substrate, the metal portion is formed by electroforming, and a surface metal layer is formed by plating on the surface of the metal portion. In the method for manufacturing a semiconductor device substrate, a semiconductor device substrate capable of mounting and wiring a semiconductor element on the metal part surface side is obtained.
The surface metal layer is formed by gloss plating with a surface glossiness of GAM glossiness of 1.0 or more,
The resist layer is formed in advance with an insulating material having resistance to dissolution with respect to a plating solution used in plating of the surface metal layer, and is left without being removed after the formation of the metal portion and the surface metal layer. A method for manufacturing a semiconductor device substrate. In the manufacturing method of the board | substrate for semiconductor devices of the said Claim 5,
The method of manufacturing a substrate for a semiconductor device, wherein the metal portion is formed in a shape having a thickness that is thicker than the resist layer and has a protruding portion at an upper end periphery. In the manufacturing method of the board | substrate for semiconductor devices of the said Claim 5,
While forming the metal part as a thickness below the resist layer,
The method for manufacturing a substrate for a semiconductor device, wherein the surface metal layer is formed in a shape having a thickness exceeding the surface of the resist layer and having an overhanging portion at an upper edge. In the manufacturing method of the substrate for semiconductor devices according to any one of claims 5 to 7,
The surface metal layer is formed by plating using a high cyan strong alkali plating solution,
A method for manufacturing a substrate for a semiconductor device, wherein the resist layer is formed of a material having resistance to dissolution against strong alkali. The semiconductor device substrate according to claim 4 or the semiconductor device substrate manufactured by the method for manufacturing a semiconductor device substrate according to any one of claims 5 to 8, onto the metal portion. Perform semiconductor device mounting and wiring, sealing with sealing material,
After the resist layer is tightly integrated with the sealing material through sealing with a sealing material, the base substrate covering the back side of the metal part is removed, and the back side of the metal part is placed on the bottom of the apparatus. A method for manufacturing a semiconductor device, characterized by obtaining an exposed state. In the manufacturing method of the semiconductor device according to claim 9,
A method of manufacturing a semiconductor device, wherein the mother substrate is made of copper or a copper alloy, and the mother substrate is dissolved and removed with an etching solution after sealing with a sealing material.

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