JP2011105551A - Method and apparatus for producing single crystal semiconductor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method and an apparatus for producing a single crystal semiconductor, wherein a service life of a carbon heater can be extended to reduce the cost for the equipment, and a high-quality single crystal semiconductor can be produced. <P>SOLUTION: The production method for a single crystal semiconductor comprises immersing a seed in a semiconductor melt which is reserved in a crucible placed in a chamber and pulling the seed to grow a single crystal semiconductor, and the method includes: a water content removing step S10 of reducing the pressure in the chamber to 10<SP>-4</SP>Pa or lower to remove the water content in the chamber; a gas introduction step S20 of introducing an inert gas into the chamber; a dissolving step S30 of heating a semiconductor raw material housed in the crucible with a carbon heater to obtain the semiconductor melt; and a growing step S40 of pulling the seed immersed in the semiconductor melt to grow the single crystal semiconductor. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a method and an apparatus for manufacturing a single crystal semiconductor in which a seed is immersed in a semiconductor melt stored in a crucible disposed in a chamber and the seed is pulled to grow a single crystal semiconductor.

  A single crystal semiconductor such as single crystal silicon used for a semiconductor substrate or the like is generally manufactured by the Czochralski method. For example, as shown in Patent Document 1, the Czochralski method is a method in which polycrystalline silicon as a raw material is placed in a quartz crucible placed in a high pressure-tight airtight chamber, and this polycrystalline is formed by a heater arranged around the quartz crucible. Silicon is heated and melted, a seed (seed crystal) is attached to a seed chuck disposed above the quartz crucible, and the seed is immersed in a silicon melt (semiconductor melt) in the quartz crucible, and the seed and the quartz crucible are rotated. Then, the seed is pulled up to grow single crystal silicon (single crystal semiconductor). Since the silicon melt is heated to 1420 ° C. or higher, a carbon heater for high temperature heating is generally used as the heater. Further, as a heat insulating member for keeping the temperature of the crucible, a heat insulating tube made of a carbon member or a heat insulating tube using a carbon felt is used.

JP 2001-278696A

By the way, in the chamber of the above-described single crystal semiconductor manufacturing apparatus, moisture in the air is adsorbed on the furnace wall or the carbon member. The presence of the adsorbed moisture causes the following problems.
That is, carbon (C) constituting the carbon heater reacts with moisture (H ₂ O) to become carbon monoxide (CO) and is discharged to the outside of the chamber. As a result, the carbon structure becomes coarse, and the carbon heater Was causing damage early. Specifically, the resistance value of the carbon heater increases, making it unsuitable for use at an early stage, and frequent replacement of members, resulting in increased equipment costs.

Further, a substance such as methane (CH ₄ ) or carbon dioxide (CO ₂ ) generated by the reaction between carbon (C) and moisture (H ₂ O) reacts with the raw material of the single crystal semiconductor to become a carbide or an oxide, In some cases, it is mixed into a single crystal semiconductor to be manufactured, causing crystal defects and crystal distortion. In this case, the product yield is also reduced.

  The present invention has been made in view of such circumstances, and is a method for producing a single crystal semiconductor capable of extending the life of a carbon heater to reduce equipment costs and producing a high-quality single crystal semiconductor. And it aims at providing a manufacturing apparatus.

In order to achieve the above object, the present invention proposes the following means.
That is, the present invention is a method for manufacturing a single crystal semiconductor, in which a seed is immersed in a semiconductor melt stored in a crucible disposed in a chamber and the single crystal semiconductor is grown by pulling up the seed. The pressure is reduced to 10 ⁻⁴ Pa or less, a moisture removing step for removing moisture in the chamber, a gas introducing step for introducing an inert gas into the chamber, and a semiconductor raw material contained in the crucible as a carbon heater A melting step of heating and melting to form the semiconductor melt, and a growth step of raising a seed immersed in the semiconductor melt to grow a single crystal semiconductor.

According to the method for manufacturing a single crystal semiconductor according to the present invention, since it has a moisture removal step of reducing the pressure in the chamber to 10 ⁻⁴ Pa or less, the moisture present in the chamber evaporates into water vapor, It is reliably discharged outside the chamber. As a result, the moisture (H ₂ O) present in the chamber reacts with the carbon (C) of the carbon heater to become carbon monoxide (CO) and is discharged outside the chamber, as in the prior art. It is reliably prevented that the product deteriorates at an early stage and cannot be used. Therefore, the lifetime of the carbon heater is extended and the equipment cost is reduced.

Further, as in the prior art, substances such as methane (CH ₄ ) and carbon dioxide (CO ₂ ) generated by the reaction of moisture (H ₂ O) present in the chamber and carbon (C) of the carbon heater are not It can be prevented that it reacts with the raw material of the crystalline semiconductor to become a carbide or oxide and is mixed into the single crystal semiconductor to be manufactured, causing crystal defects. Therefore, the crystal quality of the single crystal semiconductor is improved and the product yield is improved.

  In the method for manufacturing a single crystal semiconductor according to the present invention, in the moisture removal step, the inside of the chamber may be decompressed using any of a cryopump, a diffusion pump, a molecular pump, and an ion pump.

  In this case, the pressure in the chamber can be quickly reduced, so that the water removal step can be performed efficiently and in a short time. In general, in order to improve the gas replacement rate in the chamber, the depressurization and pressure increase are repeated, so that the cycle time of such depressurization and pressure increase is greatly reduced.

  In the method for manufacturing a single crystal semiconductor according to the present invention, in the moisture removing step, the inside of the chamber may be heated within a range of 40 to 200 ° C.

  In this case, the moisture adhering to the member such as the carbon heater in the chamber is heated and easily evaporated, so that the moisture is more reliably removed. That is, when the temperature in the chamber is set lower than the room temperature, the above-described evaporation may not be sufficiently promoted, so that the temperature is preferably set to 40 ° C. or higher. In addition, when the temperature in the chamber is set to exceed 200 ° C., it becomes difficult to produce a difference from the case where the temperature is set to a temperature higher than that (for example, 300 ° C. or less), and the energy consumption for heating is reduced. Since it will increase, it is preferable to set it at 200 degrees C or less.

In addition, when the semiconductor raw material is filled into the chamber or when the produced single crystal semiconductor is taken out, exposure of the carbon member such as a carbon heater or a heat insulating member (heat insulating cylinder) to the atmosphere occurs due to the opening of the electric furnace. At this time, since the carbon member adsorbs moisture in the atmosphere, the time for vacuum (decompression) evacuation in the next moisture removal step is significantly increased in order to remove the moisture. As a technique for suppressing such moisture adsorption and reaching a vacuum level of 10 ⁻⁴ Pa or less in a short time, it is effective to heat and hold the chamber within a range of 40 to 200 ° C. while the electric furnace is open. Is.

In the method for manufacturing a single crystal semiconductor according to the present invention, the semiconductor melt may be a silicon melt, and the single crystal semiconductor may be single crystal silicon.
In this case, high-quality single crystal silicon without crystal defects can be produced.

In the method for producing a single crystal semiconductor according to the present invention, the semiconductor melt may be a germanium melt, and the single crystal semiconductor may be a single crystal germanium.
In this case, high-quality single crystal germanium without crystal defects can be produced.

The present invention further includes a bottomed cylindrical crucible for storing a semiconductor melt and a carbon heater disposed radially outside the crucible in the chamber, and pulling up the seed immersed in the semiconductor melt. A single crystal semiconductor manufacturing apparatus for growing a single crystal semiconductor, wherein a pressure reducing means capable of reducing the pressure in the chamber to 10 ⁻⁴ Pa or lower and an inert gas introduced into the chamber And an inert gas introducing means.

According to the apparatus for manufacturing a single crystal semiconductor according to the present invention, since the decompression means provided in the chamber can decompress the pressure in the chamber to 10 ⁻⁴ Pa or less, the moisture in the chamber evaporates into water vapor, It is reliably discharged outside the chamber. This extends the life of the carbon heater and reduces equipment costs. In addition, the above-described crystal defects are prevented, the crystal quality of the single crystal semiconductor to be produced is improved, and the product yield is improved.

  In the single crystal semiconductor manufacturing apparatus according to the present invention, the decompression unit may be any of a cryopump, a diffusion pump, a molecular pump, and an ion pump.

In this case, since the decompression means is any one of a cryopump, a diffusion pump, a molecular pump, and an ion pump, the pressure in the chamber can be reliably decompressed to 10 ⁻⁴ Pa or less. In addition, since the cryopump, the diffusion pump, the molecular pump, and the ion pump have a higher water vapor exhaust speed than a general vacuum pump or the like, the water in the chamber can be more reliably removed.

  In the single crystal semiconductor manufacturing apparatus according to the present invention, a heating means for heating the inside of the chamber may be provided.

  In this case, since the heating means heats and evaporates the water adhering to the member such as the carbon heater in the chamber, the water is more reliably removed.

  Further, in the single crystal semiconductor manufacturing apparatus according to the present invention, a heat insulating member containing graphite may be disposed on the radially outer side of the carbon heater.

  In this case, the carbon heater increases the efficiency of heating (dissolving) and keeping the temperature of the semiconductor raw material and semiconductor melt in the crucible, and the moisture in the chamber is reliably removed as described above. The heat insulating member to be included does not deteriorate at an early stage. Therefore, the heat insulating member can stably heat the crucible for a long period of time, extend its life, and further reduce the equipment cost.

  According to the method and apparatus for manufacturing a single crystal semiconductor according to the present invention, the life of the carbon heater can be extended to reduce the equipment cost, and a high-quality single crystal semiconductor can be produced.

It is explanatory drawing which shows the manufacturing apparatus of the single crystal silicon which concerns on one Embodiment of this invention. It is a flowchart explaining the manufacturing procedure of the single crystal silicon which concerns on one Embodiment of this invention.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
FIG. 1 is a diagram schematically showing an outline of a single crystal silicon (single crystal semiconductor) manufacturing apparatus according to an embodiment of the present invention. Reference numeral 1 indicates a single crystal silicon manufacturing apparatus. The single crystal silicon manufacturing apparatus 1 includes a quartz crucible (crucible) 15, a seed chuck 17, a carbon heater 19, and a crucible support base 21 in a chamber 10 having a water-cooled jacket structure configured to be pressure-resistant and airtight. A seed chuck drive mechanism 30 is provided above the chamber 10.

  The chamber 10 includes a main chamber 11 having a water cooling jacket structure, a top chamber 12 having a water cooling jacket structure connected above the main chamber 11, and a pull chamber 13 having a water cooling jacket structure connected above the top chamber 12. Yes. The main chamber 11 is composed of a bottom portion 11A and a cylindrical portion 11B standing on the bottom portion 11A, and a quartz crucible 15 is disposed at the center thereof.

  Further, when the spill tray 14 is disposed on the bottom 11A of the main chamber 11, and the quartz crucible 15 is broken and the silicon melt (semiconductor melt) M flows out, the silicon melt M Can be prevented from coming into direct contact with the bottom 11A and damaging the chamber 10.

  The pull chamber 13 is formed in a substantially cylindrical shape, has a space for storing the pulled single crystal silicon T, and is connected to the main chamber 11 having a larger diameter than the pull chamber 13 by the top chamber 12.

  The top chamber 12 has a substantially multi-stage cylindrical shape whose upper part is smaller in diameter than the lower part, and a top wall part 12A is formed between the upper part and the lower part. Further, a gas introduction hole 12B is formed through the top wall portion 12A, and an inert gas introduction means 25 for introducing argon gas (inert gas) into the chamber 10 is provided in the gas introduction hole 12B. Connected by piping.

  The quartz crucible 15 has a bottomed cylindrical shape, and is capable of containing massive polycrystalline silicon (semiconductor raw material) that is a raw material of the single crystal silicon T and is produced by heating and melting the polycrystalline silicon. The silicon melt M can be stored. The quartz crucible 15 is housed in a bottomed cylindrical graphite susceptor 16.

  The graphite susceptor 16 is integrally formed by being held by a pedestal 21 </ b> C disposed on the upper surface of the crucible support base 21, and the crucible support base 21 has a support shaft 21 </ b> A at the center of the bottom 11 </ b> A of the main chamber 11. Then, it is inserted into a through hole 11H formed through the bottom 11A and the spill tray 14, and can be rotated and raised relative to the main chamber 11 by a drive motor 18 connected to the support shaft 21A. ing.

  A cylindrical carbon heater 19 is disposed outside the graphite susceptor 16 in the radial direction. Carbon (C) fiber is used for the carbon heater 19 as a material of the heating element. The lower side of the carbon heater 19 is fixed to the electrode joint 19A with bolts 19B, and the electrode joint 19A is connected to a power source (not shown) via a graphite electrode 19C disposed in the through hole of the spill tray 14.

  Although not shown, a heating means capable of heating the inside of the chamber 10 within a range of 40 to 200 ° C. is provided. The heating means is, for example, a configuration in which hot air is supplied into the chamber 10 from the outside of the chamber 10 through piping or the like, or a cylinder disposed radially outside the chamber 10 so as to surround the periphery of the carbon heater 19. It has the structure which consists of a heater etc. of a shape.

  In addition, a cylindrical heat insulating cylinder (heat insulating member) 22 is disposed outside the carbon heater 19 in the radial direction. The heat insulation cylinder 22 includes an inner heat insulation cylinder 22A made of cylindrical graphite, an outer heat insulation cylinder 22B made of cylindrical porous graphite disposed outside the inner heat insulation cylinder 22A, and the inner heat insulation cylinder 22A and the outer heat insulation cylinder. It has a lower ring 22C which is disposed below 22B and places these inner and outer heat retaining cylinders 22A and 22B, and an upper ring 22D which is disposed above the inner heat retaining cylinder 22A and the outer heat retaining cylinder 22B. The lower ring 22C and the upper ring 22D have a substantially ring plate shape, and are formed with holes having substantially the same inner diameter as that of the inner heat retaining cylinder 22A.

  In the chamber 10, a flow pipe 24 is attached to the upper end of the heat insulating cylinder 22 via a ring plate-shaped adapter 23. The flow tube 24 is disposed above the quartz crucible 15 and is formed in a cylindrical shape so as to surround the radially outer side of the seed S immersed in the silicon melt M. Specifically, the flow pipe 24 is formed in an inverted frustoconical cylindrical shape in which the upper end opening is larger in diameter than the lower end opening.

  The seed chuck 17 has a carbon chuck portion 17A formed of carbon on the tip side facing downward. A hole (not shown) extends from the tip side toward the upper base side in the center of the tip surface of the carbon chuck portion 17A. ) Is formed. A seed (seed crystal) S is inserted into the hole and is fixed to the carbon chuck portion 17A.

  The seed chuck 17 is connected to the wire W at the base end side facing upward, and the seed S is rotated and moved up and down relative to the main chamber 11 by connecting the wire W to the seed chuck drive mechanism 30. It is supposed to be free.

  The seed chuck drive mechanism 30 is provided at the upper part of the pull chamber 13, and the wire 31 is connected to the pulley 31 to which the proximal end side of the wire W is connected and wound, and the rotation axis O passing through the center of the quartz crucible 15. A rotation drive unit 32 that is rotatable relative to the pull chamber 13 is provided. Further, a pull-up drive motor 33 that drives the pulley 31 to wind the wire W and a rotation drive motor 34 that rotates the rotation drive unit 32 relative to the pull chamber 13 are provided.

  With such a configuration, the seed chuck 17 moves up and down when the pulley 31 winds the wire W, and the seed chuck 17 rotates around the rotation axis O when the rotation driving unit 32 rotates.

A cryopump 20 as a pressure reducing means for reducing the pressure in the chamber 10 is connected to the exhaust hole 11D formed in the bottom portion 11A of the main chamber 11 by a pipe so that the inside of the chamber 10 is brought into a high vacuum state. It is possible to do. Specifically, the cryopump 20 can reduce the pressure in the chamber to 10 ⁻⁴ Pa or less, and in this embodiment, the pressure in the chamber 10 is reduced to a range of 10 ⁻⁴ to 10 ⁻⁵ Pa. Be able to.

Further, the exhaust port 11D can be connected to a dry pump (not shown) other than the cryopump 20 by operating a switching valve (not shown) provided in the pipe. As this dry pump, for example, a pump capable of reducing the pressure in the chamber 10 to about 10 ⁻² Pa is used.

  Next, the manufacturing procedure of the single crystal silicon T using the single crystal silicon manufacturing apparatus 1 will be described with reference to the flowchart of FIG.

(Moisture removal process)
In S10 of FIG. 2, first, the switching valve is operated to connect the inside of the chamber 10 and the cryopump 20. Then, the cryopump 20 is actuated to reduce the pressure in the chamber 10 to 10 ⁻⁴ Pa or less and bring it to a high vacuum state, and the moisture (H ₂ O) in the chamber 10 is evaporated and discharged as water vapor to the outside. Remove. In the present embodiment, the pressure in the chamber 10 is reduced to a range of 10 ⁻⁴ to 10 ⁻⁵ Pa.

  Further, with the pressure inside the chamber 10 being reduced in this way, the inside of the chamber 10 is heated within a range of 40 to 200 ° C. by the heating means. Preferably, the carbon heater 19 is heated for about 1 hour while maintaining the temperature at about 100 ° C.

(Gas introduction process)
Next, in S20 of FIG. 2, the switching valve is operated to connect the inside of the chamber 10 and the dry pump. Then, the dry pump is operated to increase the pressure in the decompressed chamber 10 to 10 ⁻² Pa or higher. Preferably, the pressure in the chamber 10 is maintained at 10 ⁻² Pa using a dry pump. In this state, argon gas is introduced into the chamber 10 by the inert gas introduction means 25, and the pressure in the chamber 10 is set to about 30 torr.

(Dissolution process)
Next, in S30 of FIG. 2, the quartz crucible 15 is heated by the carbon heater 19, and the massive polycrystalline silicon filled in the quartz crucible 15 is melted to obtain a silicon melt M at 1420 ° C. On the other hand, in the silicon melt M, the vicinity of the portion in which the seed S is immersed (hereinafter referred to as “seed immersion portion”) is in a supercooled state.

(Growth process)
Next, in S40 of FIG. 2, with the seed S inserted and fixed in the carbon chuck portion 17A of the seed chuck 17, the seed chuck drive mechanism 30 is driven, the seed chuck 17 is lowered, and the seed S is melted into silicon melt. Immerse in the seed immersion part of M. In this state, the seed S is made to conform to the silicon melt M.

  When the seed S becomes familiar with the silicon melt M, the seed chuck 17 is raised at a speed of 0.5 mm / min to 6.0 mm / min while rotating the seed chuck 17 clockwise or counterclockwise about the rotation axis O. At this time, the quartz crucible 15 is rotated in the same direction as the rotation direction of the seed chuck 17, and the rotation speed is set within a range of 90 to 110% with respect to the rotation speed of the seed chuck 17, for example. .

  In this way, the seed chuck 17 is pulled up and the seed S is pulled up to grow the single crystal silicon T, thereby producing the substantially cylindrical single crystal silicon T.

According to the single crystal silicon manufacturing apparatus 1 and the single crystal silicon manufacturing method using the single crystal silicon manufacturing apparatus 1 of the present embodiment configured as described above, the cryopump 20 connected to the chamber 10 is used. Since the internal pressure is reduced to 10 ⁻⁴ Pa or less, the water (H ₂ O) in the chamber 10 evaporates to become water vapor and is reliably discharged to the outside of the chamber 10. Thereby, each chemical reaction as shown in the following formulas (1) to (5) is prevented.
Si + H ₂ O = SiO + H ₂ (1)
2C + 2H ₂ O═CH ₄ + CO (2)
CH ₄ + Si = SiC + 2H ₂ (3)
C + O ₂ = CO ₂ (4)
CO ₂ + Si = SiO ₂ + SiC (5)

  Since generation of silicon monoxide (SiO) of the above formula (1) is prevented, yellow powder made of SiO is prevented from adhering to the inner surface of the chamber 10. This prevents SiO peeled off from the inner surface from entering the silicon melt M and causing crystal defects in the single crystal silicon T.

  Further, since the chemical reaction of the above formula (2) is prevented, carbon (C) constituting the carbon heater 19 is prevented from being discharged to the outside of the chamber 10 as carbon monoxide (CO). Therefore, it is possible to reliably prevent the carbon heater 19 from being deteriorated at an early stage and cannot be used, thereby extending the service life and reducing the equipment cost.

Similarly, the thermal insulation cylinder 22 containing graphite (C) does not deteriorate early, and the thermal insulation cylinder 22 can stably retain the quartz crucible 15 over a long period of time, and its life is extended, and the equipment cost is reduced. Reduced more.
The chamber 10 is provided with a graphite susceptor 16 containing carbon (C), a graphite electrode 19C, and a carbon chuck portion 17A in addition to the carbon heater 19 and the heat retaining cylinder 22. Deterioration is also prevented and life is extended.

Further, since the occurrence of the (2) equation of methane (CH ₄₎ is prevented, chemical reaction of equation (3) is prevented. Accordingly, generation of silicon (Si) carbide, that is, silicon carbide (SiC) is prevented, so that the SiC is prevented from being mixed into the single crystal silicon T and causing crystal defects. Therefore, the crystal quality of the single crystal silicon T to be manufactured is improved and the product yield is improved.

Further, since the generation of carbon dioxide (CO ₂ ) of the above formula (4) is prevented, the chemical reaction of the above formula (5) is prevented, and the generation of silicon (Si) oxide, that is, silicon dioxide (SiO ₂ ). Is prevented, and crystal defects of the single crystal silicon T are prevented. Further, since the chemical reaction of the above formula (5) is prevented, the above-described crystal defects due to SiC are more reliably prevented.

In addition, since the single crystal silicon manufacturing apparatus 1 uses the cryopump 20 as the decompression means, the pressure in the chamber 10 can be reliably decompressed to 10 ⁻⁴ Pa or less. Specifically, the pressure in the chamber 10 can be surely and rapidly reduced within a range of 10 ⁻⁴ to 10 ⁻⁵ Pa. Further, according to the cryopump 20, the water vapor in the chamber 10 can be more reliably removed because the water vapor exhaust speed is higher than that of a general vacuum pump or the like.

  In addition, since the heating means is provided, the heating means heats the carbon heater 19 in the chamber 10 during the moisture removing process, so that the moisture attached to the carbon heater 19 is evaporated and removed reliably. As a result, the life of the carbon heater 19 is extended. In addition, since the entire interior of the chamber 10 is heated, moisture adhering to members other than the carbon heater 19 is likely to evaporate, and the moisture in the chamber 10 is more reliably removed.

The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention.
For example, in this embodiment, the procedure for producing single crystal silicon T from the silicon melt M in which the silicon raw material is dissolved using the single crystal silicon production apparatus 1 has been described. However, the present invention is not limited to this. .

  That is, for example, a germanium raw material is used as a semiconductor raw material, melted to obtain a germanium melt (semiconductor melt), and the germanium melt is pulled up in the chamber 10 to produce single crystal germanium (single crystal semiconductor). The present invention can also be applied to an apparatus for producing single crystal germanium.

  In the present embodiment, the cryopump 20 is provided as a decompression unit, and the inside of the chamber 10 is decompressed by using the cryopump 20 in the moisture removal step. However, the present invention is not limited to this. That is, any one of a diffusion pump, a molecular pump and an ion pump other than the cryopump 20 is provided as a decompression means, and in the moisture removal process, the inside of the chamber 10 is decompressed using any of the diffusion pump, the molecular pump and the ion pump. It is good.

In the present embodiment, in the moisture removing step, the pressure in the chamber 10 is reduced to a range of 10 ⁻⁴ to 10 ⁻⁵ Pa by the pressure reducing means. However, the present invention is not limited to this. That is, in the moisture removal step, the pressure in the chamber 10 only needs to be reduced to 10 ⁻⁴ Pa or less, and therefore, the pressure is reduced to a pressure smaller than 10 ⁻⁵ Pa other than the above range. It does not matter.

1 Single crystal silicon manufacturing equipment (single crystal semiconductor manufacturing equipment)
10 Chamber 15 Quartz crucible (Crucible)
19 Carbon heater 20 Cryopump (pressure reduction means)
22 Thermal insulation cylinder (heat insulation member)
25 Inert gas introduction means M Silicon melt (semiconductor melt)
S seed S10 moisture removal process S20 gas introduction process S30 dissolution process S40 growth process T single crystal silicon (single crystal semiconductor)

Claims (9)

A method for producing a single crystal semiconductor, comprising immersing a seed in a semiconductor melt stored in a crucible disposed in a chamber and raising the seed to grow a single crystal semiconductor,
A moisture removal step of reducing the pressure in the chamber to 10 ⁻⁴ Pa or less and removing moisture in the chamber;
A gas introduction step for introducing an inert gas into the chamber;
A melting step in which the semiconductor raw material contained in the crucible is heated and melted with a carbon heater to form the semiconductor melt;
And a growth step of pulling up the seed immersed in the semiconductor melt to grow a single crystal semiconductor. A method for producing a single crystal semiconductor according to claim 1,
In the moisture removal step, the inside of the chamber is depressurized using any of a cryopump, a diffusion pump, a molecular pump, and an ion pump. A method for producing a single crystal semiconductor according to claim 1 or 2,
In the moisture removing step, the inside of the chamber is heated within a range of 40 to 200 ° C. It is a manufacturing method of the single crystal semiconductor according to any one of claims 1 to 3,
The method for producing a single crystal semiconductor, wherein the semiconductor melt is a silicon melt, and the single crystal semiconductor is single crystal silicon. It is a manufacturing method of the single crystal semiconductor according to any one of claims 1 to 3,
The method for producing a single crystal semiconductor, wherein the semiconductor melt is a germanium melt, and the single crystal semiconductor is a single crystal germanium. A chamber having a bottomed cylindrical crucible for storing a semiconductor melt and a carbon heater disposed radially outside the crucible in the chamber, and growing a single crystal semiconductor by pulling up the seed immersed in the semiconductor melt An apparatus for manufacturing a single crystal semiconductor,
The chamber includes a decompression unit capable of reducing the pressure in the chamber to 10 ⁻⁴ Pa or less, and an inert gas introduction unit that introduces an inert gas into the chamber. Single crystal semiconductor manufacturing equipment. The single-crystal semiconductor manufacturing apparatus according to claim 6,
The apparatus for producing a single crystal semiconductor, wherein the decompression means is any one of a cryopump, a diffusion pump, a molecular pump, and an ion pump. The single-crystal semiconductor manufacturing apparatus according to claim 6 or 7,
An apparatus for manufacturing a single crystal semiconductor, comprising heating means for heating the inside of the chamber. An apparatus for producing a single crystal semiconductor according to any one of claims 6 to 8,
An apparatus for producing a single crystal semiconductor, wherein a heat insulating member containing graphite is disposed on a radially outer side of the carbon heater.

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