JP2011082565A - Device treating substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To store a substrate which prevents a substrate from being contaminated and maintains the substrate for longer period of time. <P>SOLUTION: A substrate processing system includes: a cassette station; a processing station 5; an interface station 7; and an exposure device 6. The interface station 7 includes: a storage vessel 300 storing a plurality of wafers W at multiple stages in the vertical direction and formed with openings 301, 302 on side faces on the processing station 5 side and on the exposure device 6 side; and diffusion plates 310, 311 horizontally projecting from the upper surface of the storage vessel 300. The interface station 7 is provided with an air supply region A1, a wafer region A2, and an exhaust region A3. The diffusion plates 310, 311 include ventilation parts 320, 321 for uniformly diffusing predetermined gas flowing from the air supply region A1, respectively. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus.

  For example, in a photolithography process in a semiconductor device manufacturing process, for example, a resist coating process for applying a resist solution on a wafer to form a resist film, an exposure process for exposing the resist film to a predetermined pattern, and developing the exposed resist film A series of processing such as development processing is sequentially performed, and a predetermined resist pattern is formed on the wafer.

  The processes such as the resist coating process, the exposure process, and the development process are usually performed by processing units such as a resist coating apparatus, an exposure apparatus, and a development apparatus. However, since these processing units have different processing capacities, wafers waiting for processing stay in the processing units with low processing capacities.

  If a wafer waiting to be processed is left as it is, particulate contaminants (particles) and gaseous contaminants adhere to the wafer. Further, a non-moving layer may be formed on the surface of the resist film due to the neutralization reaction between the acid in the resist film and the amine in the air, and a predetermined resist pattern may not be finally formed. For this reason, it is necessary to store a wafer waiting for processing in an appropriate environment.

  Furthermore, it is desirable to store the wafers waiting for processing for as long as possible in order to secure a degree of freedom for processing units having different processing capacities and perform a series of wafer processing efficiently.

  Therefore, conventionally, it has been proposed to store and store a wafer waiting to be processed in a storage container filled with an inert gas. Specifically, as shown in FIG. 16, an air supply port 501 that supplies an inert gas into the storage container 500 on the lower surface of the storage container 500 that stores a plurality of wafers W in multiple stages in the vertical direction, and the storage container An exhaust port 502 for exhausting the atmosphere in 500 is connected. And the inert gas is supplied from the supply port 501 and the inside of the container 500 is filled with the inert gas (Patent Document 1).

JP 2007-5604 A

  However, it is technically difficult to convert the inert gas supplied from the supply port 501 into a pure inert gas, and the inert gas contains a trace amount of amine. The air supply port 501 and the exhaust port 502 are connected to one side surface of the container 500 as shown in FIG. 17, for example, and are located on the end of the uppermost wafer W (shaded portion in FIG. 17). An inert gas passes through. As a result, the probability that the amine in the inert gas will collide with the end portion of the wafer W is higher than that of the other portions, so that a non-moving body layer is easily formed on the end portion of the wafer W and is easily contaminated. For this reason, the wafer W could not be stored for a long time.

  This invention is made | formed in view of this point, and it aims at storing a board | substrate for a long time, suppressing the contamination of a board | substrate.

  In order to achieve the above object, the present invention is a substrate processing apparatus, comprising: a processing unit that processes a substrate; and a loading / unloading unit that loads a substrate into and out of the processing unit; The exit portion has a plurality of substrates in multiple stages in the vertical direction, and includes a storage container in which a loading / unloading port for loading and unloading the substrate is formed, and a diffusion plate extending in a horizontal direction from the upper surface of the storage container. In the carry-in / out section, an air supply region for supplying a predetermined gas to the regions on the plurality of substrates via the diffusion plate, a substrate region in which the plurality of substrates are arranged in the storage container, And an exhaust region on the downstream side of the substrate region, and the diffusion plate has a ventilation portion for uniformly diffusing a predetermined gas flowing from the air supply region.

  According to the present invention, since the diffusion plate is provided in the carry-in / out section, the predetermined gas flowing from the supply region to the receiving container is uniformly diffused in the horizontal plane when passing through the diffusion plate, Flows into the substrate side. In such a case, even when a small amount of amine is contained in the predetermined gas, the probability that this amine will collide with the substrate is reduced. If it does so, formation of the non-moving body layer on a board | substrate can be suppressed. Accordingly, the substrate can be stored for a long time while suppressing contamination of the substrate.

  The storage container is provided with a lid that moves up and down to open and close the loading / unloading port, and a control device that controls the operation of the lid. The operation of the lid body may be controlled stepwise so that the lid body covers the carry-in / out port at a position facing the substrate in the storage container as being carried in / out.

  The processing unit includes a coating and developing processing unit that applies a coating liquid onto a substrate and develops the exposed coating film on the substrate, and an exposure processing unit that exposes the coating film on the substrate. The portion is disposed between the coating and developing processing unit and the exposure processing unit, and the processing container is formed with openings in which side surfaces on the coating and developing processing unit side and the exposure processing unit side are respectively opened. The diffusion plate may protrude from the upper surface of the container in the horizontal direction toward the coating and developing process side and the exposure processing unit side.

  The ventilation portion may be a through hole that penetrates the diffusion plate in the thickness direction, and a plurality of the through holes may be formed uniformly in the horizontal plane in the diffusion plate.

  ADVANTAGE OF THE INVENTION According to this invention, a board | substrate can be stored for a long time, suppressing the contamination of a board | substrate.

It is explanatory drawing which shows the outline of the internal structure of the substrate processing system which has the storage device of the substrate concerning embodiment as a reference example of this invention. It is a side view which shows the outline of the internal structure of a substrate processing system. It is a side view which shows the outline of the internal structure of a substrate processing system. It is a longitudinal cross-sectional view which shows the outline of a structure of a storage apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of a storage apparatus. It is a cross-sectional view which shows the outline of a structure of a storage apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of the storage apparatus concerning embodiment as another reference example. It is a longitudinal cross-sectional view which shows the outline of a structure of the storage apparatus concerning embodiment as another reference example. It is a longitudinal cross-sectional view which shows the outline of a structure of the storage apparatus concerning embodiment as another reference example. It is explanatory drawing which shows the outline of the internal structure of the substrate processing system concerning this Embodiment. It is a longitudinal cross-sectional view which shows the outline of a structure of the interface station vicinity of a substrate processing system. It is a longitudinal cross-sectional view which shows the outline of a structure of the cassette station vicinity of a substrate processing system. It is explanatory drawing which shows a mode that the cassette was mounted in the mounting board. It is explanatory drawing which shows a mode that the wafer W is sequentially carried out from a cassette. It is explanatory drawing which shows a mode that the wafer W is sequentially carried in in a cassette. It is a longitudinal cross-sectional view which shows the outline of a structure of the apparatus which stores the conventional board | substrate. It is a cross-sectional view which shows the outline of a structure of the apparatus which stores the conventional board | substrate.

  Hereinafter, an embodiment as a reference example of the present invention will be described. FIG. 1 is an explanatory diagram showing an outline of an internal configuration of a substrate processing system 1 as a substrate processing apparatus having a substrate storage device according to the present embodiment. 2 and 3 are side views showing an outline of the internal configuration of the substrate processing system 1.

  The substrate processing system 1 includes a coating and developing processing device 2, a storage device 3, and an exposure device 6 as an exposure processing unit.

  As shown in FIG. 1, the coating / developing apparatus 2 performs a predetermined processing in a single-wafer type in a photolithography process, for example, a cassette station 4 as a loading / unloading section for loading / unloading a cassette C to / from the outside. A processing station 5 serving as a coating and developing processing unit including a plurality of various processing units and an interface station 7 serving as a loading / unloading unit that transfers the wafer W between the exposure apparatus 6 adjacent to the processing station 5 are integrated. It has a connected configuration. The processing station 5 and the exposure apparatus 6 constitute the processing unit of the present invention.

  The cassette station 4 is divided into, for example, a cassette carry-in / out unit 10 and a wafer transfer unit 11. For example, the cassette carry-in / out unit 10 is provided at the end of the coating and developing treatment apparatus 2 on the Y direction negative direction (left direction in FIG. 1) side. The cassette loading / unloading unit 10 is provided with a cassette mounting table 12. An opener 13 for opening and closing the cassette C is provided opposite to the cassette C on the wafer transfer unit 11 side of the cassette mounting table 12. A plurality, for example, four mounting plates 14 are provided on the cassette mounting table 12. The mounting plates 14 are arranged in a line in the horizontal X direction (vertical direction in FIG. 1). The cassette C can be placed on these placement plates 14 when the cassette C is carried in and out of the coating and developing treatment apparatus 2. Further, the mounting plate 14 is slidable in the Y direction, for example, and the wafer take-out port of the placed cassette C can be moved to the wafer transfer unit 11 side. The loading / unloading of the cassette C between the coating / developing apparatus 2 and the outside thereof is performed by the external cassette conveying apparatus B shown in FIG. 2 that conveys the cassette C between the processing apparatuses in the factory.

  As shown in FIGS. 1 and 2, the wafer transfer unit 11 of the cassette station 4 is covered with a casing 11a for controlling the atmosphere. The wafer transfer unit 11 is provided with a wafer transfer device 21 that is movable on a transfer path 20 extending in the X direction as shown in FIG. The wafer transfer device 21 is also movable in the vertical direction and the vertical axis direction (θ direction), and includes a cassette C on each mounting plate 14 and a delivery device for a third block G3 of the processing station 5 described later. Wafers W can be transferred between them.

  The processing station 5 is provided with a plurality of, for example, four blocks G1, G2, G3, and G4 having various units. For example, the first block G1 is provided on the front side of the processing station 5 (X direction negative direction side in FIG. 1), and the second side is provided on the back side of the processing station 5 (X direction positive direction side in FIG. 1). Block G2 is provided. Further, a third block G3 is provided on the cassette station 4 side (Y direction negative direction side in FIG. 1) of the processing station 5, and the processing station 5 interface station 7 side (Y direction positive direction side in FIG. 1). Is provided with a fourth block G4.

  For example, in the first block G1, as shown in FIG. 3, a plurality of liquid processing units, for example, a development processing unit 30 for developing the wafer W, an antireflection film (hereinafter referred to as “lower antireflection”) under the resist film of the wafer W. A lower antireflection film forming unit 31 for forming a film ”, a resist coating unit 32 for applying a resist solution to the wafer W to form a resist film, and an antireflection film (hereinafter referred to as“ upper reflection ”on the resist film of the wafer W). An upper antireflection film forming unit 33 for forming an “antireflection film” is stacked in four stages in order from the bottom.

  For example, each unit 30 to 33 of the first block G1 has a plurality of cups F that accommodate the wafer W in the horizontal direction during processing, and can process the plurality of wafers W in parallel.

  For example, in the second block G2, as shown in FIG. 2, a heat treatment unit 40 that heat-treats the wafer W, an adhesion unit 41 that hydrophobizes the wafer W, and a peripheral exposure unit that exposes the outer periphery of the wafer W 42 are arranged side by side in the vertical direction and the horizontal direction. The heat treatment unit 40 has a hot plate for placing and heating the wafer W and a cooling plate for placing and cooling the wafer W, and can perform both heat treatment and cooling treatment. The number and arrangement of the heat treatment unit 40, the adhesion unit 41, and the peripheral exposure unit 42 can be arbitrarily selected.

  For example, in the third block G3, a plurality of delivery units 50, 51, 52, 53, 54, 55, and 56 are provided in order from the bottom. The fourth block G4 is provided with a plurality of delivery units 60, 61, 62 in order from the bottom.

  As shown in FIG. 1, a wafer transfer region D is formed in a region surrounded by the first block G1 to the fourth block G4. For example, a wafer transfer device 70 is disposed in the wafer transfer region D.

  The wafer transfer device 70 has a transfer arm that is movable in the Y direction, the front-rear direction, the θ direction, and the vertical direction, for example. The wafer transfer device 70 moves in the wafer transfer area D and transfers the wafer W to a predetermined unit in the surrounding first block G1, second block G2, third block G3, and fourth block G4. it can.

  For example, as shown in FIG. 2, a plurality of wafer transfer apparatuses 70 are arranged in the vertical direction, and can transfer the wafer W to a predetermined unit having the same height of each of the blocks G1 to G4, for example.

  Further, in the wafer transfer region D, a shuttle transfer device 80 that transfers the wafer W linearly between the third block G3 and the fourth block G4 is provided.

  The shuttle transport device 80 is movable linearly in the Y direction, for example. The shuttle transfer device 80 moves in the Y direction while supporting the wafer W, and can transfer the wafer W between the transfer unit 52 of the third block G3 and the transfer unit 62 of the fourth block G4.

  As shown in FIG. 1, a wafer transfer device 90 is provided on the positive side in the X direction of the third block G3. The wafer transfer device 90 has a transfer arm that is movable in the front-rear direction, the θ direction, and the vertical direction, for example. The wafer transfer device 90 moves up and down while supporting the wafer W, and can transfer the wafer W to each delivery unit in the third block G3.

  The interface station 7 is covered with a casing 7a. The interface station 7 is provided with a wafer transfer device 100. The wafer transfer apparatus 100 has a transfer arm that is movable in the front-rear direction, the θ direction, and the vertical direction, for example. The wafer transfer apparatus 100 supports the wafer W on a transfer arm, for example, and transfers the wafer W to each transfer unit in the fourth block G4, the exposure apparatus 6, and the storage device 3 provided outside the coating and developing treatment apparatus 2. Can be transported.

  Next, the configuration of the storage device 3 described above will be described. As shown in FIGS. 4 and 5, the storage device 3 includes a storage container 110 that stores a plurality of, for example, 25 wafers W in multiple stages in the vertical direction and can seal the inside. A loading / unloading port for allowing the wafer W to enter and exit is formed on one side surface of the storage container 110, and a lid 111 is attached to the loading / unloading port. The lid body 111 is moved up and down by an opener (not shown), and the loading / unloading port is opened and closed.

  As shown in FIGS. 4 and 6, a partition wall 112 that partitions the inside of the storage container 110 in the horizontal direction is provided in the storage container 110. The partition wall 112 extends in a horizontal direction between the closed lid body 111 and the side surface of the storage container 110 facing the cover body 111 to partition the storage container 110. In addition, the partition wall 112 extends upward from the lower surface of the storage container 110 so as to form an opening 113 having a predetermined interval between the upper end of the partition wall 112 and the upper surface of the storage container 110.

  A diffusion plate 120 is provided in the storage container 110 so as to cover the upper portion of the wafer W as shown in FIG. The diffusion plate 120 is disposed on the upper part of the partition wall 112 and is disposed so as to be surrounded by the partition wall 112 and the side wall of the storage container 110 as shown in FIG. The diffusion plate 120 is formed with a through-hole 121 that penetrates the diffusion plate 120 in the thickness direction as a ventilation portion. A plurality of through holes 121 are formed uniformly in the horizontal plane of the diffusion plate 120. With this diffusion plate 120, an inert gas as a predetermined gas flowing from an air supply region A1 described later can be uniformly diffused in a horizontal plane.

  As described above, the wafer W, the partition wall 112, and the diffusion plate 120 are arranged in the storage container 110. As shown in FIG. 4, the storage container 110 has a predetermined gas in the region on the wafer W side through the diffusion plate 120. Supply region A1, a wafer region A2 as a substrate region on which a plurality of wafers W are arranged, and an exhaust region A3 downstream of the wafer region A2. Further, a flow path R that is isolated from the wafer region A2 and communicates with the air supply region A1 is formed in the side wall portion of the container 110.

  An air supply port 130 for supplying an inert gas to the air supply region A1 of the storage container 110 is formed on the lower surface of the storage container 110 in the flow path R. An air supply pipe 131 is connected to the air supply port 130. The supply pipe 131 communicates with an inert gas supply source (not shown) that stores the inert gas. For example, nitrogen gas is used as the inert gas. In the present embodiment, an inert gas is used as the gas supplied into the storage container 110, but other gases such as air may be used.

  An exhaust port 132 for exhausting the atmosphere in the storage container 110 from the exhaust area A3 is formed on the lower surface of the storage container 110 in the exhaust area A3. An exhaust pipe 133 is connected to the exhaust port 132. The exhaust pipe 133 is connected to a negative pressure generator (not shown) such as a pump, and can forcibly exhaust the atmosphere in the storage container 110.

  The storage container 110 is supported by a carriage 140 provided below the storage container 110. The carriage 140 is configured to be movable in the horizontal direction.

  The substrate processing system 1 is provided with a control device 150 as shown in FIG. The control device 150 is a computer, for example, and has a program storage unit (not shown). The program storage unit controls the atmosphere in the storage device 3, that is, supplies the inert gas from the air supply port 130 into the storage container 110 and exhausts the atmosphere in the storage container 110 from the exhaust port 132. The program to control is stored. In addition to this, the program storage unit controls the operation of drive systems such as the above-described various processing units and transfer devices to apply a predetermined action of the substrate processing system 1 described later, that is, to apply a resist solution to the wafer W. Also stored are programs for realizing development, heat treatment, delivery of the wafer W, control of each unit, and the like. The program is recorded on a computer-readable storage medium such as a computer-readable hard disk (HD), flexible disk (FD), compact disk (CD), magnetic optical desk (MO), or memory card. Or installed in the control device 150 from the storage medium.

  Next, wafer processing performed in the substrate processing system 1 configured as described above will be described.

  First, a cassette C containing a plurality of wafers W in one lot is placed on a predetermined placement plate 14 of the cassette station 4 shown in FIG. Then, the cassette C is moved to the wafer transfer unit 11 side by the mounting plate 14, and the cassette C is opened by the opener 13. Thereafter, the wafers W in the cassette C are sequentially taken out by the wafer transfer device 21 and transferred to, for example, the delivery unit 53 of the third block G3 of the processing station 5.

  Next, the wafer W is transferred to the heat treatment unit 40 of the second block G2 by the wafer transfer device 70, and the temperature is adjusted. Thereafter, the wafer W is transferred to, for example, the lower antireflection film forming unit 31 of the first block G1 by the wafer transfer device 70, and a lower antireflection film is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment unit 40 of the second block G2, heated, temperature-controlled, and then returned to the delivery unit 53 of the third block G3.

  Next, the wafer W is transferred to the delivery unit 54 of the same third block G3 by the wafer transfer device 90. Thereafter, the wafer W is transferred by the wafer transfer device 70 to the adhesion unit 41 of the second block G2, and subjected to an adhesion process. Thereafter, the wafer W is transferred to the resist coating unit 32 by the wafer transfer device 70, and a resist film is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment unit 40 by the wafer transfer device 70 and pre-baked. Thereafter, the wafer W is transferred by the wafer transfer apparatus 70 to the delivery unit 55 of the third block G3.

  Next, the wafer W is transferred to the upper antireflection film forming unit 33 by the wafer transfer device 70, and an upper antireflection film is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment unit 40 by the wafer transfer device 70, heated, and the temperature is adjusted. Thereafter, the wafer W is transferred to the peripheral exposure unit 42 and subjected to peripheral exposure processing.

  Thereafter, the wafer W is transferred to the delivery unit 56 of the third block G3 by the wafer transfer device 70.

  Next, the wafer W is transferred to the transfer unit 52 by the wafer transfer device 90 and transferred to the transfer unit 62 of the fourth block G4 by the shuttle transfer device 80. Thereafter, the wafer W is transferred by the wafer transfer device 100 of the interface station 7 to the storage device 3 disposed outside the coating and developing treatment device 2. In the storage device 3, a predetermined number of wafers W are stored for a predetermined time according to the processing capability of the exposure device 6 that performs the subsequent exposure processing.

  When a predetermined number of wafers W are stored in the storage container 110 of the storage device 3, the lid 111 is closed to seal the interior of the storage container 110. Thereafter, an inert gas is supplied from the air supply port 130 into the storage container 110, and the atmosphere in the storage container 110 is exhausted from the exhaust port 132. At this time, the inert gas supplied from the air supply port 130 sequentially passes through the flow path R and the opening 113 and flows into the air supply region A1. The inert gas that has flowed into the air supply region A1 passes through the through hole 121 of the diffusion plate 120, is uniformly diffused in the horizontal plane, and flows into the wafer region A2 where the plurality of wafers W are arranged. Thereafter, the atmosphere in the processing container 110 is exhausted from the exhaust port 132 from the exhaust region A3. In this way, the atmosphere in the storage container 110 is replaced with an inert gas atmosphere.

  Thereafter, when a predetermined time elapses, the wafer W in the storage device 3 is transferred to the exposure device 6 by the wafer transfer device 100 of the interface station 7 and subjected to exposure processing. In the present embodiment, the wafer W is temporarily stored in the storage device 3 before the exposure processing. However, if the processing capability of the exposure device 6 is sufficient, the wafer of the transfer unit 62 in the fourth block G4. W may be directly transferred to the exposure apparatus 6 by the wafer transfer apparatus 100.

  Next, the wafer W is transferred by the wafer transfer apparatus 100 to the delivery unit 60 of the fourth block G4. Thereafter, the wafer W is transferred to the heat treatment unit 40 by the wafer transfer device 70 and subjected to post-exposure baking. Thereafter, the wafer W is transferred to the development processing unit 30 by the wafer transfer device 70 and developed. After the development is completed, the wafer W is transferred to the heat treatment unit 40 by the wafer transfer device 70 and subjected to a post-bake process.

  Thereafter, the wafer W is transferred to the delivery unit 50 of the third block G3 by the wafer transfer device 70, and then transferred to the cassette C of the predetermined mounting plate 14 by the wafer transfer device 21 of the cassette station 4. In this way, a series of processing (photolithographic processing) is completed, and a predetermined resist pattern is formed on the wafer W.

  According to the above embodiment, since the diffusion plate 120 is provided in the storage container 110, the inert gas supplied from the air supply port 130 to the air supply region A1 through the flow path R is diffused. When passing through the plate 120, it is uniformly diffused in the horizontal plane and flows into the wafer region A2. In such a case, even when a trace amount of amine is contained in the inert gas supplied from the air supply port 130, the probability that the amine collides with the wafer W in the wafer region A2 is reduced. Then, formation of a non-moving body layer on the wafer W can be suppressed. In addition, since the inside of the storage container 110 can be sealed, the contaminants do not enter from the outside, and adhesion of the contaminants on the wafer W can be suppressed. Therefore, it is possible to store the wafer W for a long time while suppressing contamination of the wafer W.

  Since contamination of the wafer W can be suppressed in this way, a predetermined resist pattern can be formed on the wafer W in the substrate processing system 1. That is, it is possible to suppress the development defect in the development processing of the wafer W and suppress the resolution failure, thereby forming the upper shape of the resist pattern in a predetermined shape, and forming the line width of the resist pattern in a predetermined dimension. . Furthermore, since the wafer W can be stored for a long time, it is possible to secure a degree of freedom for performing various processes, and it is possible to efficiently perform a series of wafer processes even when the processing capabilities of the processing units are different. For example, in the present embodiment, the processing capability of the exposure device 6 is lower than the processing capability of the coating and developing processing device 2, but after performing predetermined processing in the coating and developing processing device 2 and before performing exposure processing in the exposure device 6. In addition, since the wafer W is stored in the storage device 3, it is not necessary to stop various processes in the coating and developing processing device 2 in accordance with the processing capability of the exposure device 6. For this reason, the processing capabilities of the coating and developing treatment apparatus 2 and the exposure apparatus 6 can be utilized to the maximum, and the productivity of the substrate processing system 1 can be improved.

  In addition, since the flow path R that is isolated from the wafer region A2 and communicates with the air supply region A1 is formed in the side wall portion of the storage container 110, the inert gas supplied from the air supply port 130 is supplied to a plurality of wafers. The wafer does not flow directly into the wafer area A2 where W is disposed, and reliably passes through the diffusion plate 120. Therefore, the inert gas that collides with the wafer W can be reliably diffused.

  Further, since the inert gas is supplied from the air supply port 130 to replace the atmosphere in the storage container 110 with the inert gas atmosphere, the amine content in the storage container 110 can be minimized, The wafer W can be stored for a longer time.

  In the above embodiment, the wafer W is stored in the storage device 3 before the exposure processing in the exposure device 6. However, the wafer W transferred to the interface station 7 after the exposure processing in the exposure device 6 is stored. The apparatus 3 may store it for a predetermined time. Even in such a case, a degree of freedom for performing various processes can be secured, and a series of wafer processes can be efficiently performed even when the processing capability of each processing unit is different. Further, for example, a plurality of storage devices 3 may be provided in the substrate processing system 1, and the wafer W may be stored in the storage device 3 in both steps before and after the exposure processing in the exposure processing 6.

  In the above embodiment, the diffusion plate 120 is provided so as to cover the upper side of the wafer W in the container 110, but the diffusion plate 120 is provided so as to cover the lower side of the wafer W as shown in FIG. It may be done. In such a case, the partition wall 112 extends downward from the upper surface of the storage container 110 so as to form an opening 113 having a predetermined interval between the lower end thereof and the lower surface of the storage container 110. The diffusion plate 120 is disposed below the partition wall 112. The air supply port 130 is formed on the upper surface of the storage container 110 in the flow path R, and the exhaust port 132 is formed on the upper surface of the storage container 110 in the exhaust region A3. In addition, about the structure of these members, since it is the same as the structure demonstrated in the said embodiment, description is abbreviate | omitted. Further, the configuration of the other members of the substrate processing system 1 is the same as the configuration described in the above embodiment, and thus the description thereof is omitted. Also in the present embodiment, the inert gas supplied from the air supply port 130 sequentially passes through the flow path R and the air supply region A1, and is uniformly diffused in the horizontal plane by the diffusion plate 120, so that a plurality of wafers are obtained. It flows into the wafer area A2 where W is disposed. Therefore, since the probability that a trace amount of amine in the inert gas collides with the wafer W is reduced, the formation of a non-moving body layer on the wafer W can be suppressed, and the wafer W can be stored for a long time.

  In the above embodiment, the partition wall 112 is provided in the storage container 110. However, without providing the partition wall 112, an exhaust port may be provided in the exhaust pipe extending from the supply region A1 to the exhaust region A3. Good. As shown in FIG. 8, the diffusion plate 200 is provided below the plurality of wafers W so as to partition the inside of the container 110 in the vertical direction. In this way, the diffusion plate 200 is arranged in the storage container 110, and the storage container 110 is supplied with an air supply region A1 for supplying a predetermined gas to the region on the wafer W side through the diffusion plate 200, and a plurality of wafers W. Is provided with a wafer region A2 as a substrate region on which is disposed, and an exhaust region A3 on the downstream side of the wafer region A2. In addition, the diffusion plate 200 has a plurality of through-holes 201 that penetrate the diffusion plate 200 in the thickness direction as a ventilation portion.

  An air supply port 210 for supplying an inert gas into the storage container 110 is formed on the lower surface of the storage container 110. An air supply pipe 211 is connected to the air supply port 210. The supply pipe 211 communicates with an inert gas supply source (not shown) that stores the inert gas.

  An exhaust pipe 212 extending in the vertical direction from the lower surface (supply area A1) of the storage container 110 to the upper side of the wafer W (exhaust area A3) is provided in the storage container 110. An upper end portion of the exhaust pipe 212 is opened to form an exhaust port 213. The other end of the exhaust pipe 213 is connected to a negative pressure generator (not shown) such as a pump provided in the storage container 110, and the atmosphere in the storage container 110 can be forcibly exhausted. In addition, about the structure of the other member of the substrate processing system 1, since it is the same as the structure demonstrated in the said implementation, description is abbreviate | omitted.

  In such a case, the inert gas supplied from the air supply port 210 to the air supply region A1 is uniformly diffused in the horizontal plane by the diffusion plate 200 and flows into the wafer region A2 where the plurality of wafers W are arranged. Thereafter, the atmosphere in the storage container 110 is exhausted from the exhaust port 213 above the wafer W from the exhaust region A3. Then, the atmosphere in the storage container 110 is replaced with an inert gas. Thus, since the inert gas flowing into the wafer region A2 is diffused, the probability that a trace amount of amine in the inert gas collides with the wafer W is reduced. As a result, formation of a non-moving body layer on the wafer W can be suppressed, and the wafer W can be stored for a long time.

  In the above embodiment, the diffusion plate 200 is provided below the wafer W in the container 110, but the diffusion plate 200 may be provided above the wafer W as shown in FIG. In such a case, the air supply port 210 is formed on the upper surface of the storage container 110. The exhaust pipe 212 extends vertically from the upper surface (air supply area A1) of the storage container 110 through the diffusion plate 200 to the lower part of the wafer W (exhaust area A3). The lower end portion of the exhaust pipe 212 is opened to form an exhaust port 213. In addition, about the structure of these members, since it is the same as the structure demonstrated in the said embodiment, description is abbreviate | omitted. Further, the configuration of the other members of the substrate processing system 1 is the same as the configuration described in the above embodiment, and thus the description thereof is omitted. Also according to the present embodiment, the inert gas supplied from the air supply port 210 to the air supply region A1 is uniformly diffused in the horizontal plane by the diffusion plate 200, and enters the wafer region A2 where the plurality of wafers W are arranged. Inflow. Therefore, since the probability that a trace amount of amine in the inert gas collides with the wafer W is reduced, the formation of a non-moving body layer on the wafer W can be suppressed, and the wafer W can be stored for a long time.

  In the above embodiment, the control device 150 stops the supply of the inert gas when the supply time of the inert gas from the air supply port 130 into the storage container 110 reaches a predetermined supply time. Also good. This predetermined supply time is set to a time when the inert gas is supplied from the air supply port 130 and the atmosphere in the container 110 is replaced with the inert gas. For example, the predetermined supply time is 15 minutes at a supply rate of 5 liters / minute. Set to In such a case, since the supply of the inert gas is stopped when the atmosphere in the storage container 110 is replaced with the inert gas, the probability that the amine in the inert gas collides with the wafer W becomes lower. Therefore, the formation of the non-moving body layer on the wafer W can be more reliably suppressed, and the wafer W can be stored for a long time. Further, the operation cost can be reduced as compared with the case where the inert gas is constantly supplied.

  In the control device 150, the supply of the inert gas is controlled by the supply time, but may be controlled by the supply amount. That is, when the supply amount of the inert gas reaches a predetermined supply amount, the supply of the inert gas may be stopped. This predetermined supply amount is also set to a supply amount in which the atmosphere in the storage container 110 is replaced with an inert gas, and is approximately the same volume as the storage container 110 capable of storing, for example, 25 300 mm diameter wafers W. Set to 30 liters. The control of the supply time and the supply amount is set in consideration of the concentration of the inert gas.

  In the above embodiment, the wafer W is stored in the storage device 3 provided outside the coating and developing treatment apparatus 2, but in the embodiment of the present invention, as shown in FIG. It may be performed inside the processing device 2. The interface station 7 of the coating and developing treatment apparatus 2 is provided with a storage container 300 that stores and stores the wafer W. As shown in FIG. 11, a plurality of wafers W are accommodated in the accommodating container 300 in multiple stages in the vertical direction. The side surface of the storage container 300 on the processing station 5 side is opened to form a first opening 301. Further, the side surface of the storage container 300 on the exposure apparatus 6 side is opened to form a second opening 302. The wafer transfer device 100 can access the loading / unloading port (not shown) for loading / unloading the wafer W into / from the storage container 300, and the wafer W can be transferred to the storage container 300.

  On the upper surface 303 of the container 300, a first diffusion plate 310 projecting horizontally from the upper surface 303 to the processing station 5 side, and a second diffusion plate 311 projecting horizontally from the upper surface 303 to the exposure apparatus 6 side. Is provided. In this way, the first diffusion plate 310 and the second diffusion plate 311 are arranged, and the interface station 7 supplies a predetermined gas to the region on the wafer W side via the first diffusion plate 310. A region A1, a wafer region A2 as a substrate region on which a plurality of wafers W are arranged, and an exhaust region A3 on the downstream side of the wafer region A2 are provided. In addition, the first diffusion plate 310 has a plurality of through-holes 320 that uniformly penetrate the first diffusion plate 310 in the thickness direction as ventilation portions in the horizontal plane. Further, the second diffusion plate 311 is also provided with a plurality of through holes 321 that uniformly penetrate the second diffusion plate 311 in the thickness direction as ventilation portions in the horizontal plane. In addition, about the structure of the other member of the substrate processing system 1, since it is the same as the structure demonstrated in the said implementation, description is abbreviate | omitted.

  Here, when the normal operation is performed, a downward airflow called a downflow is generated inside the processing station 5. Further, the inside of the processing station 5 is set at a higher pressure than the inside of the interface station 7. Then, the gas in the processing station 5 flows into the interface station 7 while flowing downward, and flows in the interface station 7 toward the exposure apparatus 6.

  In the present embodiment, a part of the gas flowing into the interface station 7 from the processing station 5 flows in the supply region A1 in the horizontal direction, and the remaining gas flows downward from the supply region A1. The gas flowing downward is uniformly diffused in the horizontal plane by the first diffusion plate 310 and flows into the wafer region A2 where the plurality of wafers W are arranged. Even if the gas flows backward from the exposure apparatus 6 side, the gas is uniformly diffused in the horizontal plane by the second diffusion plate 311 and flows into the wafer region A2. In such a case, even when an amine is contained in the gas flowing in from the processing station 5, the probability that the amine collides with the wafer W stored in the storage container 300 is reduced. Then, formation of a non-moving body layer on the wafer W can be suppressed. Therefore, it is possible to store the wafer W for a long time while suppressing contamination of the wafer W.

  In the coating and developing treatment apparatus 2 of the above embodiment, on the upper surface of the cassette C as a storage container placed in the cassette carry-in / out section 10 of the cassette station 4, as shown in FIG. A diffusing plate 400 may be provided on the processing station 5 side. In this way, the diffusion plate 400 is disposed, and the cassette station 4 is provided with an air supply region A1 for supplying a predetermined gas to the region on the wafer W side through the diffusion plate 400, and a substrate on which a plurality of wafers W are disposed. A wafer area A2 as an area and an exhaust area A3 on the downstream side of the wafer area A2 are provided. In addition, the diffusion plate 400 has a plurality of through-holes 401 that penetrate the diffusion plate 400 in the thickness direction uniformly as a ventilation portion in a horizontal plane.

  The cassette C is configured such that a plurality of wafers W are accommodated in multiple stages in the vertical direction and the inside can be sealed. A loading / unloading port 410 for loading / unloading the wafer W is formed on the wafer transfer unit 11 side (processing station 5 side) of the cassette C, and a lid 411 is attached to the loading / unloading port 410. The lid body 411 is moved up and down by the opener 13 described above, and the loading / unloading port 410 is opened and closed. In addition, about the structure of the other member of the substrate processing system 1, since it is the same as the structure demonstrated in the said implementation, description is abbreviate | omitted.

  Here, when a wafer W is carried into and out of the cassette C by the wafer conveyance device 21, a downward air flow called “down flow” is usually generated inside the wafer conveyance unit 11. At this time, the loading / unloading port 410 is opened by moving the lid 411 from the loading / unloading port 410. Then, a part of the gas in the wafer transfer unit 11 flows into the cassette C while flowing downward.

  In the present embodiment, the gas flowing downward through the air supply region A1 in the wafer transfer unit 11 is uniformly diffused in the horizontal plane by the diffusion plate 400 and flows into the wafer region A2 where a plurality of wafers W are arranged. To do. In such a case, even when an amine is contained in the gas flowing in from the wafer transfer unit 11, the probability that the amine collides with the wafer W accommodated in the cassette C is reduced. As a result, formation of a non-moving body layer on the wafer W can be suppressed, and the wafer W can be stored for a long time.

  In the above embodiment, the control device 150 may control the operation of the lid body 411 as described below. First, as shown in FIG. 13, a cassette C containing a plurality of wafers W is placed on a predetermined placement plate 14. At this time, the loading / unloading port 410 is closed by the lid 411. Thereafter, as shown in FIG. 14, the lid 411 is moved downward by the opener 13 to open the loading / unloading port 410, and the wafers W in the cassette C are transferred to the processing station 5 in order from the top by the wafer transfer device 21. At this time, as the wafer W is unloaded from the cassette C, the lid body 411 moves downward in a stepwise manner so that the lid body 411 covers the loading / unloading port 410 at a position facing the wafer W remaining in the cassette C. Moving. Thereafter, the wafers W that have been subjected to predetermined processing in the processing station 5 and the exposure apparatus 6 are sequentially transferred from the bottom to the cassette C as shown in FIG. At this time, as the wafer W is loaded into the cassette C, the lid body 411 moves upward in a stepwise manner so that the lid body 411 covers the loading / unloading port 410 at a position facing the loaded wafer W. . Thus, the wafer W for which the predetermined processing has been completed is accommodated in the cassette C.

  In such a case, when loading / unloading the wafer W into / from the cassette C, the lid 411 opens and closes the loading / unloading port 410 in stages, so that when loading / unloading the wafer W into / from the cassette C with the loading / unloading port 410 open. In comparison, the flow rate of the gas flowing from the supply region A1 to the wafer region A2 can be reduced. If it does so, the probability that the amine in gas will collide with the wafer W accommodated in the cassette C becomes low, and formation of the layer of the non-moving body on the wafer W can further be suppressed.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various changes or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood. The present invention is not limited to this example and can take various forms. The present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.

  The present invention is useful when storing a substrate such as a semiconductor wafer.

DESCRIPTION OF SYMBOLS 1 Substrate processing system 2 Application | coating development processing apparatus 3 Storage apparatus 4 Cassette station 5 Processing station 6 Exposure apparatus 7 Interface station 110 Storage container 112 Partition wall 113 Opening part 120 Diffusion plate 121 Through-hole 130 Air supply port 131 Air supply pipe 132 Exhaust port 133 Exhaust pipe 150 Control device A1 Supply area A2 Wafer area A3 Exhaust area R Flow path W Wafer

Claims (4)

A substrate processing apparatus,
A processing unit for processing a substrate;
A loading / unloading unit for loading / unloading the substrate to / from the processing unit;
The carry-in / out section
A storage container in which a plurality of substrates are accommodated in multiple stages in the vertical direction, and a loading / unloading port for loading and unloading the substrates is formed,
A diffusion plate extending in a horizontal direction from the upper surface of the container,
In the carry-in / out section,
An air supply region for supplying a predetermined gas to the plurality of substrate-side regions through the diffusion plate;
A substrate region in which a plurality of substrates are arranged in the container;
An exhaust region downstream of the substrate region, and
The substrate processing apparatus, wherein the diffusion plate has a ventilation portion for uniformly diffusing a predetermined gas flowing from the supply region. The storage container is provided with a lid that moves up and down to open and close the loading / unloading port, and a control device that controls the operation of the lid,
As the substrate is sequentially carried into and out of the storage container, the control device performs the operation of the cover stepwise so that the cover body covers the loading / unloading port at a position facing the substrate in the storage container. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is controlled. The processing unit has a coating development processing unit that applies a coating liquid on a substrate and develops the exposed coating film on the substrate, and an exposure processing unit that exposes the coating film on the substrate,
The carry-in / out unit is disposed between the coating and developing processing unit and the exposure processing unit,
In the processing container, an opening is formed in which side surfaces of the coating and developing processing unit side and the exposure processing unit side are respectively opened.
3. The substrate processing apparatus according to claim 1, wherein the diffusion plate projects from the upper surface of the storage container in the horizontal direction toward the coating and developing treatment side and the exposure processing unit side. 4. The ventilation portion is a through-hole penetrating the diffusion plate in the thickness direction,
The substrate processing apparatus according to claim 1, wherein a plurality of the through holes are uniformly formed in the diffusing plate in a horizontal plane.

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