JP2011082160A - 垂直薄膜リチウムイオン電池を形成するための方法 - Google Patents
垂直薄膜リチウムイオン電池を形成するための方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 40
- 229910001416 lithium ion Inorganic materials 0.000 title claims abstract description 24
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 239000010409 thin film Substances 0.000 title abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000003792 electrolyte Substances 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 138
- 239000000463 material Substances 0.000 claims description 21
- 239000011241 protective layer Substances 0.000 claims description 10
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052744 lithium Inorganic materials 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910012851 LiCoO 2 Inorganic materials 0.000 claims description 3
- 229910012696 LiTiOS Inorganic materials 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- BFZPBUKRYWOWDV-UHFFFAOYSA-N lithium;oxido(oxo)cobalt Chemical compound [Li+].[O-][Co]=O BFZPBUKRYWOWDV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- SMBQBQBNOXIFSF-UHFFFAOYSA-N dilithium Chemical compound [Li][Li] SMBQBQBNOXIFSF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 2
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical compound S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000006183 anode active material Substances 0.000 abstract 1
- 239000006182 cathode active material Substances 0.000 abstract 1
- 238000001465 metallisation Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 150000002642 lithium compounds Chemical class 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- OINMNSFDYTYXEQ-UHFFFAOYSA-M 2-bromoethyl(trimethyl)azanium;bromide Chemical compound [Br-].C[N+](C)(C)CCBr OINMNSFDYTYXEQ-UHFFFAOYSA-M 0.000 description 1
- 229910010707 LiFePO 4 Inorganic materials 0.000 description 1
- WTQZCJZGAXKVEY-UHFFFAOYSA-N S=O.[Li].[Ti] Chemical compound S=O.[Li].[Ti] WTQZCJZGAXKVEY-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical group [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- GELKBWJHTRAYNV-UHFFFAOYSA-K lithium iron phosphate Chemical compound [Li+].[Fe+2].[O-]P([O-])([O-])=O GELKBWJHTRAYNV-UHFFFAOYSA-K 0.000 description 1
- 229910001386 lithium phosphate Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- TWQULNDIKKJZPH-UHFFFAOYSA-K trilithium;phosphate Chemical compound [Li+].[Li+].[Li+].[O-]P([O-])([O-])=O TWQULNDIKKJZPH-UHFFFAOYSA-K 0.000 description 1
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Abstract
【解決手段】少なくとも、ドープシリコン、金属等の導電性基板10上に、局所的に貫通開口部を備える絶縁層12を形成するステップと、陽極コレクタ層18、陽極活物質層20、電解質層22および陰極活物質層24を備える積み重ねを堆積するステップと、このスタックは絶縁層12の厚さより小さい厚さを有し、開口の中に残る空間を満たす陰極コレクタ層28を形成するステップと、絶縁層12の上部露出面を平坦化するステップとを含む。
【選択図】図7
Description
−陰極コレクタを形成する第1の層18。この層は、例として、チタン、タングステン、モリブデン、タンタル、プラチナまたはこれらの材料の合金また積み重ねから作られ、100から500nmの間の厚さの範囲を有する。
−電池陰極を形成する第2の層20。LiTiOS(チタンリチウム酸硫化物)、LiCoO2(コバルトリチウム酸化物)、またはLiFePO4(リチウム鉄リン酸塩)のような材料から作られ、1から10μmの間の厚さの範囲を有する。より一般的に層20はリチウムイオン型電池の陰極として使用可能なリチウムを挿入することが可能な材料から作られる。
−電池電解質を形成する第3の層22。例えば、LiPON(リチウムリン酸窒化物)または固体リチウムイオンセル電解質を形成することが可能な他の材料から形成される。第3の層は、1から3μmの間の厚さの範囲を有する。
−電池陽極を形成する第4の層24。例として、シリコン、ゲルマニウム、炭素、またはこれらの材料の合金また積み重ねから作られる。第4の層は、10から800nmの間の厚さの範囲を有する。
12 絶縁層
14 開口
16 積み重ね
18 第1の層
20 第2の層
22 第3の層
24 第4の層
26 シード層
28 陽極コレクタ層
30 層
32 層
34 開口
36 メタライゼーション
38 第1の接触
40 導電範囲
42 ワイヤー
Claims (10)
- (a)少なくとも局所的に導電性がある基板(10)上に、貫通開口(14)を備える絶縁層(12)を形成するステップと、
(b)連続的かつ等角的に、陰極コレクタ層(18)、陰極層(20)、電解質層(22)および陽極層(24)を備える積み重ね(16)を堆積するステップと、このスタックは絶縁層の厚さより小さい厚さを有し、
(c)開口(14)の中に残る空間を満たす陽極コレクタ層(28)を構造上に形成するステップと、
(d)絶縁層(12)の上部表面を露出するため構造を平坦化するステップと、
を含むことを特徴とするリチウムイオン型電池を形成するための方法。 - ステップ(d)の後に、
構造上に少なくとも1つの保護層(30、32)を形成し、陽極コレクタ層(28)上の前記保護層の中に開口(34)を形成し、
保護層の開口の中、保護層の一部分上に導電領域(36)を形成するステップを
さらに含むことを特徴とする請求項1に記載の方法。 - 導電層(28)の上に第1の接触(38)と基板(10)の上に第2の接触(42)を形成するステップを
さらに含むことを特徴とする請求項2に記載の方法。 - ステップ(c)の前にシード層(26)を形成するステップを
さらに含むことを特徴とする請求項1から3のいずれか1項に記載の方法。 - 陽極コレクタ層(28)はシード層(26)上で低い温度で電解質成長によって形成され、シード層はチタンおよび銅の積み重ねによって形成されることを特徴とする請求項4に記載の方法。
- 基板(10)はドープシリコンまたは金属から作られ、陰極コレクタ層(18)はチタン、タングステン、モリブデン、タンタル、プラチナまたはこれらの材料の合金また積み重ねから作られ、陰極層(20)は、チタンリチウム酸硫化物(LiTiOS)、コバルトリチウム酸化物(LiCoO2)、またはリチウムを挿入することが可能な材料から作られ、電解質層(22)は、リチウムリン酸窒化物(LiPON)から作られ、陽極層(24)はシリコン、ゲルマニウム、炭素、またはこれらの材料の合金また積み重ねから作られ、陽極コレクタ層(28)は、銅から作られることを特徴とする請求項2から5のいずれか1項に記載の方法。
- 陰極コレクタ層(18)、陰極層(20)、電解質層(22)および陽極層(24)は物理気相成長法(PVD)によって形成されることを特徴とする請求項1から6のいずれか1項に記載の方法。
- 保護層は、セラミック、Al2O3、SiN、またはZrO2から作られる第1の層(30)と第2のSiO2層(32)の積み重ねから形成されることを特徴とする請求項2から7のいずれか1項に記載の方法。
- 絶縁層は5から30μmの間の厚さを有し、陰極コレクタ層(18)は100から500nmの間の厚さを有し、陰極層(20)は1から10μmの間の厚さを有し、電解質層(22)は1から3μmの間の厚さを有し、陽極層(24)は10から800nmの間の厚さを有することを特徴とする請求項1から8のいずれか1項に記載の方法。
- 第1の貫通開口(14)を備える絶縁層(12)を支える少なくとも局所的に導電性がある基板(10)と、
開口(14)の壁と底に沿い、第1の開口を満たす積み重ねである陰極コレクタ層(18)、陰極層(20)、電解質層(22)、陽極層(24)、陽極コレクタ層(28)の積み重ねと、
を有することを特徴とするリチウムイオン型電池。
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FR0956676A FR2950741A1 (fr) | 2009-09-28 | 2009-09-28 | Procede de formation d'une batterie lithium-ion verticale en couches minces |
FR0956676 | 2009-09-28 |
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EP2584629B1 (en) * | 2011-10-21 | 2014-10-01 | BlackBerry Limited | Recessed tab for higher energy density and thinner batteries |
US9142840B2 (en) | 2011-10-21 | 2015-09-22 | Blackberry Limited | Method of reducing tabbing volume required for external connections |
US10446828B2 (en) | 2011-10-21 | 2019-10-15 | Blackberry Limited | Recessed tab for higher energy density and thinner batteries |
FR2994338A1 (fr) * | 2012-08-03 | 2014-02-07 | St Microelectronics Tours Sas | Procede de formation d'une batterie de type lithium-ion |
US10553898B2 (en) * | 2017-08-11 | 2020-02-04 | International Business Machines Corporation | Thin-film lithium ion battery with fast charging speed |
GB2575792B (en) * | 2018-07-20 | 2021-11-03 | Dyson Technology Ltd | Stack for an energy storage device |
GB2575787B (en) * | 2018-07-20 | 2021-12-01 | Dyson Technology Ltd | Stack for an energy storage device |
CN109609910B (zh) * | 2019-01-10 | 2021-04-13 | 深圳市致远动力科技有限公司 | 薄膜电池制备装置及方法 |
WO2020248093A1 (zh) * | 2019-06-10 | 2020-12-17 | 深圳市汇顶科技股份有限公司 | 薄膜锂离子电池、薄膜锂离子电池的制备方法和终端 |
KR20210032689A (ko) * | 2019-09-17 | 2021-03-25 | 현대자동차주식회사 | 전극간 쇼트발생을 억제하는 전고체 전지용 양극 및 그 제조방법 |
GB2587419A (en) * | 2019-09-30 | 2021-03-31 | Ilika Tech Limited | Method of fabricating a component material for a battery cell |
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KR100305903B1 (ko) * | 1998-08-21 | 2001-12-17 | 박호군 | 수직으로통합연결된박막형전지를구비하는전기및전자소자와그제작방법 |
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CN102035030A (zh) | 2011-04-27 |
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