JP2011071146A - 光電変換デバイス及びその製造方法、並びに太陽電池 - Google Patents
光電変換デバイス及びその製造方法、並びに太陽電池 Download PDFInfo
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 201
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 230000005684 electric field Effects 0.000 claims abstract description 117
- 239000004065 semiconductor Substances 0.000 claims abstract description 113
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims description 74
- 238000006880 cross-coupling reaction Methods 0.000 claims description 44
- 239000000872 buffer Substances 0.000 claims description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 13
- 229910021389 graphene Inorganic materials 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 6
- 230000003746 surface roughness Effects 0.000 claims description 6
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical group C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 4
- 229920000123 polythiophene Polymers 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- 230000001747 exhibiting effect Effects 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000002105 nanoparticle Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000009751 slip forming Methods 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910003472 fullerene Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000003575 carbonaceous material Substances 0.000 claims 1
- 229920001940 conductive polymer Polymers 0.000 claims 1
- 230000005525 hole transport Effects 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 217
- 238000000034 method Methods 0.000 description 37
- 239000010408 film Substances 0.000 description 21
- 150000002894 organic compounds Chemical class 0.000 description 13
- 230000000694 effects Effects 0.000 description 12
- 239000012044 organic layer Substances 0.000 description 12
- 239000011368 organic material Substances 0.000 description 11
- 229920000642 polymer Polymers 0.000 description 9
- 239000002245 particle Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 7
- 239000007772 electrode material Substances 0.000 description 7
- 230000006870 function Effects 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 230000002265 prevention Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000004070 electrodeposition Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000009503 electrostatic coating Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000002082 metal nanoparticle Substances 0.000 description 3
- -1 phenylene-vinylene Chemical group 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000001737 promoting effect Effects 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000010422 painting Methods 0.000 description 2
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- QENGPZGAWFQWCZ-UHFFFAOYSA-N 3-Methylthiophene Chemical compound CC=1C=CSC=1 QENGPZGAWFQWCZ-UHFFFAOYSA-N 0.000 description 1
- BZORYGRKQHUBCY-UHFFFAOYSA-N 3-butylthiophene Chemical compound [CH2]CCCC=1C=CSC=1 BZORYGRKQHUBCY-UHFFFAOYSA-N 0.000 description 1
- JAYBIBLZTQMCAY-UHFFFAOYSA-N 3-decylthiophene Chemical compound CCCCCCCCCCC=1C=CSC=1 JAYBIBLZTQMCAY-UHFFFAOYSA-N 0.000 description 1
- WQYWXQCOYRZFAV-UHFFFAOYSA-N 3-octylthiophene Chemical compound CCCCCCCCC=1C=CSC=1 WQYWXQCOYRZFAV-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- PONZBUKBFVIXOD-UHFFFAOYSA-N 9,10-dicarbamoylperylene-3,4-dicarboxylic acid Chemical compound C=12C3=CC=C(C(O)=O)C2=C(C(O)=O)C=CC=1C1=CC=C(C(O)=N)C2=C1C3=CC=C2C(=N)O PONZBUKBFVIXOD-UHFFFAOYSA-N 0.000 description 1
- 229920003026 Acene Polymers 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- XEPMXWGXLQIFJN-UHFFFAOYSA-K aluminum;2-carboxyquinolin-8-olate Chemical class [Al+3].C1=C(C([O-])=O)N=C2C(O)=CC=CC2=C1.C1=C(C([O-])=O)N=C2C(O)=CC=CC2=C1.C1=C(C([O-])=O)N=C2C(O)=CC=CC2=C1 XEPMXWGXLQIFJN-UHFFFAOYSA-K 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical class C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000007610 electrostatic coating method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- KKFHAJHLJHVUDM-UHFFFAOYSA-N n-vinylcarbazole Chemical compound C1=CC=C2N(C=C)C3=CC=CC=C3C2=C1 KKFHAJHLJHVUDM-UHFFFAOYSA-N 0.000 description 1
- 150000002790 naphthalenes Chemical class 0.000 description 1
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 description 1
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 150000002979 perylenes Chemical class 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- CLYVDMAATCIVBF-UHFFFAOYSA-N pigment red 224 Chemical compound C=12C3=CC=C(C(OC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)OC(=O)C4=CC=C3C1=C42 CLYVDMAATCIVBF-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000005185 salting out Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 150000003967 siloles Chemical class 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
【解決手段】 本発明は、光電変換デバイス(光電変換素子100)又は太陽電池等に関し、n型半導体及びp型半導体を含む光電変換層3を備えるようにすると共に、この光電変換層3が、層内に光電場を形成すると共に入射光の波長よりも小さい部分を含む電場形成領域4を有するようにし、光電変換層3における光電変換特定の改善を図るようにしたことに特徴がある。
【選択図】図1
Description
(実施形態1)
(実施形態2)
(実施形態3)
(実施形態4)
(実施形態5)
3 光電変換層
4 電場形成領域
4a 電場形成物質
5 バッファ層
10 基板
31 n型半導体層
32 バルクへテロ結合層
33 p型半導体層
100 光電変換素子
Claims (25)
- n型半導体及びp型半導体を含む光電変換層を備え、
前記光電変換層は、当該光電変換層内に光電場を形成すると共に入射光の波長よりも小さい部分を含む電場形成領域を有することを特徴とする光電変換デバイス。 - n型半導体及びp型半導体を含むバルクへテロ結合層を有する光電変換層を備え、
前記光電変換層は、前記バルクへテロ結合層に光電場を形成すると共に入射光の波長よりも小さい部分を含む電場形成領域を有することを特徴とする光電変換デバイス。 - 前記光電変換層は、前記n型半導体及びp型半導体を含むバルクへテロ結合層がn型半導体層及びp型半導体層の間に設けられた層を有することを特徴とする請求項1又は2記載の光電変換デバイス。
- 前記光電変換層は、前記電場形成領域がn型半導体層及びp型半導体層の間に設けられた層を有することを特徴とする請求項1〜3の何れか1項に記載の光電変換デバイス。
- 前記電場形成領域は、前記n型半導体層と前記p型半導体層との界面近傍に不連続領域として設けられていることを特徴とする請求項4記載の光電変換デバイス。
- 前記電場形成領域は、前記光電変換層の面方向に亘って連続的に形成されていることを特徴とする請求項1〜4の何れか1項に記載の光電変換デバイス。
- 前記電場形成領域は、前記入射光の波長よりも小さい面粗さで形成されていることを特徴とする請求項6記載の光電変換デバイス。
- 前記電場形成領域は、前記n型半導体及びp型半導体を含むバルクへテロ結合層内に形成されていることを特徴とする請求項1〜7の何れか1項に記載の光電変換デバイス。
- 前記電場形成領域は、入射光の波長よりも小さい電場形成物質で形成されていることを特徴とする請求項1〜8の何れか1項に記載の光電変換デバイス。
- 前記電場形成領域は、プラズモン共鳴を示す電場形成物質で形成されていることを特徴とする請求項1〜9の何れか1項に記載の光電変換デバイス。
- 前記電場形成領域は、金属で形成されていることを特徴とする請求項1〜10の何れか1項に記載の光電変換デバイス。
- 前記電場形成領域は、ナノ粒子で形成されていることを特徴とする請求項1〜11の何れか1項に記載の光電変換デバイス。
- 前記電場形成領域は、Au、Ag、Cu、Pt、Al、Pdからなる群から選択される少なくとも1種を含む材料で形成されていることを特徴とする請求項1〜12の何れか1項に記載の光電変換デバイス。
- 前記電場形成領域は、前記光電変換層における電荷の生成を促すよう作用する領域であることを特徴とする請求項1〜13の何れか1項に記載の光電変換デバイス。
- 前記p型半導体がポリチオフェン及びポリチオフェン系誘導体、前記n型半導体がフラーレン及びフラーレン系誘導体であることを特徴とする請求項1〜14の何れか1項に記載の光電変換デバイス。
- 前記光電変換層の少なくとも一方面側には電極が設けられ、
前記電場形成領域は、外光のうち前記電極を透過する入射光の波長より小さい部分を含むことを特徴とする請求項1〜15の何れか1項に記載の光電変換デバイス。 - 前記光電変換層の少なくとも一方面側には電極が設けられ、
前記電極は、炭素系材料により形成される透明電極からなることを特徴とする請求項1〜16の何れか1項に記載の光電変換デバイス。 - 前記光電変換層の少なくとも一方面側には電極が設けられ、
前記電極は、複数の炭素原子が平面状に連なって形成される格子形状の薄膜からなることを特徴とする請求項1〜17の何れか1項に記載の光電変換デバイス。 - 前記光電変換層の少なくとも一方面側には電極が設けられ、
前記電極は、グラフェン薄膜からなることを特徴とする請求項1〜18の何れか1項に記載の光電変換デバイス。 - 前記光電変換層は正極及び負極の間に設けられ、前記光電変換層と前記正極及び負極との間にバッファ層が設けられていることを特徴とする請求項1〜19の何れか1項に記載の光電変換デバイス。
- 前記バッファ層は、前記正極側が正孔輸送路となり得る物質からなり、前記負極側が電子輸送路となり得る物質からなることを特徴とする請求項20記載の光電変換デバイス。
- 前記正極側のバッファ層は、酸化チタン又はフッ化リチウムの少なくとも何れか一方からなり、前記負極側のバッファ層は、導電性高分子からなることを特徴とする請求項20又は21に記載の光電変換デバイス。
- 請求項1〜22の何れか1項に記載の光電変換デバイスを備えたことを特徴とする太陽電池。
- 入射光で電荷を生成する光電変換デバイスを製造するに際し、n型半導体及びp型半導体を含むと共に層内に光電場を形成し且つ入射光の波長よりも小さい部分からなる電場形成領域を有する光電変換層を形成するステップを有することを特徴とする光電変換デバイスの製造方法。
- 正極又は負極となる導電体層上に、n型半導体及びp型半導体を含むと共に層内に光電場を形成し且つ入射光の波長よりも小さい部分からなる電場形成領域を有する光電変換層を形成するステップを有することを特徴とする太陽電池の製造方法。
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JP2015115508A (ja) * | 2013-12-12 | 2015-06-22 | 王子ホールディングス株式会社 | 有機薄膜太陽電池、有機薄膜太陽電池用の基板、有機薄膜太陽電池の製造方法および有機薄膜太陽電池用の基板の製造方法 |
KR101629729B1 (ko) * | 2015-09-07 | 2016-06-13 | 한국기계연구원 | 페로브스카이트 태양전지 |
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WO2009085224A2 (en) * | 2007-12-20 | 2009-07-09 | Cima Nanotech Israel Ltd. | Photovoltaic device having transparent electrode formed with nanoparticles |
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JP2015115508A (ja) * | 2013-12-12 | 2015-06-22 | 王子ホールディングス株式会社 | 有機薄膜太陽電池、有機薄膜太陽電池用の基板、有機薄膜太陽電池の製造方法および有機薄膜太陽電池用の基板の製造方法 |
KR101629729B1 (ko) * | 2015-09-07 | 2016-06-13 | 한국기계연구원 | 페로브스카이트 태양전지 |
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