JP2011066438A - Device and method for bonding semiconductor chip - Google Patents

Device and method for bonding semiconductor chip Download PDF

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JP2011066438A
JP2011066438A JP2010249192A JP2010249192A JP2011066438A JP 2011066438 A JP2011066438 A JP 2011066438A JP 2010249192 A JP2010249192 A JP 2010249192A JP 2010249192 A JP2010249192 A JP 2010249192A JP 2011066438 A JP2011066438 A JP 2011066438A
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heating furnace
gas
bonding
semiconductor chip
heating
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JP5356358B2 (en
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Eiichi Irie
栄一 入江
Yoshihiko Kawasaki
仁彦 河崎
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Lintec Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To bond a semiconductor chip completely to a substrate having a wiring pattern through a thermosetting adhesive sheet so as not to incorporate air bubbles between the adhesive sheet and the substrate. <P>SOLUTION: In this device 1 for bonding a semiconductor chip, a bonding object D with semiconductor chips C temporarily fixed on a substrate CB through a thermosetting adhesive sheet S is heated to bond the semiconductor chips. The device includes: a heating furnace 14 including a heating means 18; a pressurization means 27 to supply a predetermined gas into the heating furnace 14 to pressurize the interior of the heating furnace 14; an air guide means 15 arranged to surround at least the bonding object D in the heating furnace 14; and a blast means 21 to guide a gas in the heating furnace 14 heated by the heating means 18 in the direction of the bonding object D. The inside of the air guide means 15 forms a downwind passage 16 of the heated gas, and the outside of the air guide means 15 and the inner wall of the heating furnace 14 form an upwind passage 17 for guiding the gas having passed through the bonding object D in the direction of the blast means 21. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、熱硬化性の接着シートを介して半導体チップを基板に接着するための半導体チップ接着装置及び接着方法に関する。   The present invention relates to a semiconductor chip bonding apparatus and bonding method for bonding a semiconductor chip to a substrate via a thermosetting adhesive sheet.

一般に、回路が形成された半導体ウエハ(以下、「ウエハ」という)をダイシング工程で個々の半導体チップ(以下、「チップ」という)に切断した後、ダイボンディング工程等において各チップを配線パターンを有する基板の所定の位置、つまり、電極箇所に接着することが行われている。このようにチップを基板にダイボンディングする場合、その前工程で熱硬化性の接着シートがウエハ裏面に予め貼付される。   Generally, after a semiconductor wafer (hereinafter referred to as “wafer”) on which a circuit is formed is cut into individual semiconductor chips (hereinafter referred to as “chips”) in a dicing process, each chip has a wiring pattern in a die bonding process or the like. Bonding to a predetermined position of the substrate, that is, an electrode location is performed. Thus, when die-bonding a chip | tip to a board | substrate, the thermosetting adhesive sheet is previously affixed on the wafer back surface in the pre-process.

熱硬化性の接着シートを貼付する方法は特許文献1で知られている。この特許文献1記載のものでは、接着シートとカバーシートとを重ね合わせた状態の原シートをウエハの裏面に貼付する。次に、ウエハに貼付された原シートをウエハの周縁に沿って切断した後、原シートを所定温度に加熱して接着シートを接着する。そして、上記のようにダイシング工程で切断された各チップからカバーシートを剥離し、チップ裏面に接着シートのみが接着された状態とする。そして、チップが基板に仮着され、この状態で所定の温度に加熱され、接着シートの接着剤が硬化することによって接着が行われる。   A method of applying a thermosetting adhesive sheet is known from Patent Document 1. In the one described in Patent Document 1, an original sheet in a state where an adhesive sheet and a cover sheet are overlapped is attached to the back surface of the wafer. Next, after cutting the original sheet affixed to the wafer along the periphery of the wafer, the original sheet is heated to a predetermined temperature to bond the adhesive sheet. And a cover sheet is peeled from each chip | tip cut | disconnected by the dicing process as mentioned above, and it is set as the state by which only the adhesive sheet was adhere | attached on the chip | tip back surface. And a chip | tip is temporarily attached to a board | substrate, and it adheres by heating to predetermined temperature in this state, and hardening | curing the adhesive agent of an adhesive sheet.

特開2003−257898号公報JP 2003-257898 A

上記特許文献1記載のものでは、ウエハに接着シートを貼付するときに、ローラを介して接着シートを湾曲させることによって、ウエハとの間の空気を外方へ追い出しつつ接着が行われる。このため、ウエハと接着シートとの間には気泡が混入することなく貼付が行える。然し、カバーシートを剥離した各チップを基板に仮着するときには、前記と同様にチップを湾曲させて接着することができないため、接着シートと基板との間に気泡が混入してしまう。この気泡は、加熱によって完全接着させた後も消失せずに残るため、接着シートと基板との接着面積が小さくなってしまい、接着力が不足し、接着されたチップが外れてしまうという不具合が発生する。なお、本発明において、接着シートの完全接着とは、接着シートが熱によって硬化を完了した状態のことを意味し、仮着とは硬化完了前の状態のことをいう(以降同様)。   In the thing of the said patent document 1, when sticking an adhesive sheet to a wafer, it adhere | attaches, expelling the air between wafers outward by curving an adhesive sheet via a roller. For this reason, it can stick without a bubble mixing between a wafer and an adhesive sheet. However, when each chip from which the cover sheet has been peeled is temporarily attached to the substrate, the chip cannot be bent and bonded in the same manner as described above, so that air bubbles are mixed between the adhesive sheet and the substrate. Since the bubbles remain without disappearing even after being completely bonded by heating, the bonding area between the adhesive sheet and the substrate becomes small, the adhesive force is insufficient, and the bonded chip comes off. appear. In the present invention, the complete adhesion of the adhesive sheet means a state in which the adhesive sheet has been cured by heat, and temporary attachment refers to a state before the completion of curing (hereinafter the same).

そこで、本発明の課題は、上記点に鑑み、気泡が混入したままの状態にすることなく、熱硬化性の接着シートを介してチップを基板に確実に接着できる半導体チップ接着装置及び接着方法を提供することにある。   Therefore, in view of the above points, an object of the present invention is to provide a semiconductor chip bonding apparatus and a bonding method capable of reliably bonding a chip to a substrate via a thermosetting adhesive sheet without causing bubbles to remain mixed. It is to provide.

上記課題を解決するために、請求項1記載の半導体チップ接着装置は、基板上に熱硬化性の接着シートを介して半導体チップが仮着された接着対象物を加熱して接着する半導体チップ接着装置において、加熱手段を含む加熱炉と、前記加熱炉内に所定のガスの供給を行って当該加熱炉内を加圧する加圧手段と、前記加熱炉内で少なくとも前記接着対象物を囲うように配置された導風手段と、前記加熱手段により加熱された前記加熱炉内のガスを前記接着対象物方向に導く送風手段とを有し、前記導風手段の内側が前記加熱されたガスの順風路を形成するとともに、前記導風手段の外側と加熱炉の内壁とで接着対象物を通過したガスを前記送風手段方向に導く逆風路を形成することを特徴とする。   In order to solve the above-mentioned problem, the semiconductor chip bonding apparatus according to claim 1 is a semiconductor chip bonding which heats and bonds an object to be bonded on which a semiconductor chip is temporarily attached on a substrate via a thermosetting adhesive sheet. In the apparatus, a heating furnace including a heating means, a pressurizing means for supplying a predetermined gas to the heating furnace to pressurize the heating furnace, and at least the bonding object in the heating furnace is enclosed. An air guide means disposed; and a blower means for guiding the gas in the heating furnace heated by the heating means in the direction of the object to be bonded, and the inside of the air guide means is a forward wind of the heated gas. A path is formed, and a reverse air path is formed between the outer side of the air guide unit and the inner wall of the heating furnace to guide the gas that has passed through the bonding object in the direction of the air blowing unit.

なお、排気手段の開放状態とは、所定のガスの供給を行うことによって加熱炉内に残留するガス成分が加熱炉外に排出される状態、又は前記ガス成分が真空ポンプなどにより強制的に加熱炉外に排出される状態をいい、他方で、排気手段の閉鎖状態とは、加熱炉内からのガスの排出が停止された状態をいう(以降同様)。   Note that the exhaust state of the exhaust means means a state in which the gas component remaining in the heating furnace is discharged outside the heating furnace by supplying a predetermined gas, or the gas component is forcibly heated by a vacuum pump or the like. The state discharged | emitted out of a furnace means the other side, On the other hand, the closed state of an exhaust means means the state which discharge | emission of the gas from the inside of a heating furnace was stopped (hereinafter the same).

本発明において、前記接着対象物を通過したガスを前記逆風路に導く導風補助手段が設けられた構成としてもよい。   In this invention, it is good also as a structure provided with the wind guide auxiliary | assistance means which guides the gas which passed the said adhesion | attachment target object to the said reverse wind path.

さらに、上記課題を解決するために、請求項3記載の半導体チップ接着方法は、請求項1または請求項2記載の半導体チップ接着装置を用いて、基板上に熱硬化性の接着シートを介して半導体チップが仮着された接着対象物を加熱して接着する半導体チップ接着方法であって、前記接着対象物を加熱炉内の導風手段内側に収納し、加熱炉内を所定の圧力に加圧する工程と、加熱炉内のガスを加熱し、この加熱されたガスを前記導風手段内の接着対象物に導いて当該接着対象物を所定の温度に加熱する工程とを含む、ことを特徴とする。   Furthermore, in order to solve the said subject, the semiconductor chip bonding | attaching method of Claim 3 uses the semiconductor chip bonding | attachment apparatus of Claim 1 or Claim 2, and put a thermosetting adhesive sheet on a board | substrate. A semiconductor chip bonding method in which an object to be bonded to which a semiconductor chip is temporarily attached is heated and bonded. The bonded object is housed inside a wind guide means in a heating furnace, and the heating furnace is heated to a predetermined pressure. And a step of heating the gas in the heating furnace, guiding the heated gas to an object to be bonded in the air guide means, and heating the object to be bonded to a predetermined temperature. And

本発明の半導体チップ接着装置においては、仮着時に接着シートと基板との間に気泡が混入していたとしても、加圧することによってその気泡は接着シートの接着剤層に分散して取り込まれて消失する。この状態で、加熱炉内を所定温度に加熱することで、熱硬化性の接着シートが硬化してチップが基板に完全に接着される。これにより、接着シートの接着面積が不足することに起因した接着力の低下を防止し、接着されたチップが外れてしまうという不具合を解消し、信頼性の高い半導体チップ接着装置を提供することができる。   In the semiconductor chip bonding apparatus of the present invention, even if bubbles are mixed between the adhesive sheet and the substrate during temporary attachment, the bubbles are dispersed and taken into the adhesive layer of the adhesive sheet by applying pressure. Disappear. In this state, by heating the inside of the heating furnace to a predetermined temperature, the thermosetting adhesive sheet is cured and the chip is completely bonded to the substrate. Accordingly, it is possible to prevent a decrease in adhesive force due to a lack of an adhesive area of the adhesive sheet, eliminate a problem that the bonded chip is detached, and provide a highly reliable semiconductor chip bonding apparatus. it can.

また、導風手段と送風手段を備える構成を採用することで、送風手段から送られたガスが加熱手段を通過する際に加熱され、この加熱されたガスが接着対象物の周辺を通り抜けるように導かれ、更に、逆風路を通って送風手段に戻るように導かれる。このようなガスの流れをつくることで、加熱炉内の温度分布のばらつきをなくすことができ、より確実な接着が可能となる。   In addition, by adopting a configuration including the air guiding means and the air blowing means, the gas sent from the air blowing means is heated when passing through the heating means, and the heated gas passes through the periphery of the object to be bonded. Then, it is guided to return to the blowing means through the reverse wind path. By creating such a gas flow, variations in temperature distribution in the heating furnace can be eliminated, and more reliable bonding is possible.

更に、導風補助手段を設けた構成を採用すれば、順風路を通り抜けたガスが効率よく逆風路に導かれるため、より一層加熱炉内の温度分布のばらつきをなくすことができる。   Furthermore, if the structure provided with the wind guide auxiliary means is adopted, the gas passing through the forward wind path is efficiently guided to the reverse wind path, so that the variation in temperature distribution in the heating furnace can be further eliminated.

本発明の半導体チップ接着装置の概略断面図。1 is a schematic sectional view of a semiconductor chip bonding apparatus according to the present invention. 図1のA−A線に沿った断面図。Sectional drawing along the AA line of FIG. 基板に接着シートを介して半導体チップが仮着された接着対象物の半導体チップ接着装置への配置を説明する図。The figure explaining arrangement | positioning to the semiconductor chip bonding apparatus of the adhesion target object by which the semiconductor chip was temporarily attached to the board | substrate through the adhesive sheet. 本発明の半導体チップの接着方法を実施した後の接着対象物を示す拡大断面図。The expanded sectional view which shows the adhesion target object after implementing the adhesion method of the semiconductor chip of the present invention.

図1を参照して、1は、熱硬化性の接着シートSを介してチップCが仮着された基板としての基板CB(図3参照)を完全に接着するための本実施の形態の半導体チップ接着装置である。   Referring to FIG. 1, reference numeral 1 denotes a semiconductor according to the present embodiment for completely bonding a substrate CB (see FIG. 3) as a substrate to which a chip C is temporarily attached via a thermosetting adhesive sheet S. It is a chip bonding apparatus.

前記半導体チップ接着装置1は、外装ケース11を具備し、その左側面には開口部12が形成され、この開口部12を開閉する開閉扉13が装着されている。外装ケース11内には、一側面を開口したベルジャ型の加熱炉14が配置され、開閉扉13を閉じると、加熱炉14が密閉されるようになっている。本実施の形態の場合、配線パターンを有する基板CBの所定の位置に熱硬化性の接着シートSを介してチップCが仮着されたものを接着対象物Dとし、基板マガジンMに前記接着対象物Dの複数枚を所定の間隔を置いて収納し、この基板マガジンMの複数個をマガジンラックLに収納したものが加熱炉14内に設置されるようになっている(図3参照)。   The semiconductor chip bonding apparatus 1 includes an exterior case 11, an opening 12 is formed on the left side surface, and an opening / closing door 13 that opens and closes the opening 12 is mounted. In the exterior case 11, a bell jar type heating furnace 14 having one side opened is disposed. When the door 13 is closed, the heating furnace 14 is sealed. In the case of the present embodiment, an object to which a chip C is temporarily attached via a thermosetting adhesive sheet S at a predetermined position of a substrate CB having a wiring pattern is defined as an object to be bonded D, and the object to be bonded to the substrate magazine M. A plurality of articles D are stored at a predetermined interval, and a plurality of substrate magazines M stored in a magazine rack L are installed in the heating furnace 14 (see FIG. 3).

加熱炉14内には、当該加熱炉14の長手方向に沿って延びる導風手段を構成する筒状部材15が設けられ、この筒状部材15の内部が円筒状の順風路16を形成するとともに、加熱炉14の内壁との間で環状の逆風路17を形成する。筒状部材15の右側には加熱手段18が取り付けられている。加熱手段18は、コイル状のフィラメント19によって構成され(図2参照)、図示しない電源によってフィラメント19に所定の電流を流すことで発熱する。また、筒状部材15内には、その筒状部材15の中心から下側にオフセットさせて2本の支持レール20が設けられ、各支持レール20により、前記マガジンラックLが所定の位置で水平に保持されるようになっている。   In the heating furnace 14, a cylindrical member 15 constituting an air guide means extending along the longitudinal direction of the heating furnace 14 is provided, and the inside of the cylindrical member 15 forms a cylindrical forward air passage 16. An annular reverse air passage 17 is formed between the inner wall of the heating furnace 14. A heating means 18 is attached to the right side of the cylindrical member 15. The heating means 18 is composed of a coiled filament 19 (see FIG. 2), and generates heat when a predetermined current is passed through the filament 19 by a power source (not shown). Further, two support rails 20 are provided in the cylindrical member 15 so as to be offset downward from the center of the cylindrical member 15, and the magazine rack L is horizontally placed at a predetermined position by the support rails 20. Is supposed to be retained.

加熱炉14の右側には送風手段21が取り付けられている。この送風手段21は、加熱炉14の内壁と筒状部材15の右端部との間の空間に位置するプロペラ式の回転羽根22と、この回転羽根22を駆動するモータ23とから構成されている。そして、モータ23を駆動して回転羽根22を回転させると、筒状部材15内の順風路16を通って開閉扉13に向かうガスの流れが生じるようになっている。   A blowing means 21 is attached to the right side of the heating furnace 14. The blower means 21 includes a propeller-type rotary blade 22 located in a space between the inner wall of the heating furnace 14 and the right end portion of the cylindrical member 15, and a motor 23 that drives the rotary blade 22. . When the motor 23 is driven to rotate the rotary blade 22, a gas flow toward the open / close door 13 through the forward air passage 16 in the cylindrical member 15 is generated.

開閉扉13の内面には、開口部12に対向させて、相互に連続するくぼみ部24が形成されている。くぼみ部24は、前記順風路16を通過してきたガスがこのくぼみ部24に衝突して反射し、効率よく逆風路17に向かって流れるように設計されており、くぼみ部24が導風補助手段を構成する。   On the inner surface of the open / close door 13, recessed portions 24 that are continuous with each other are formed facing the opening 12. The indentation 24 is designed so that the gas that has passed through the forward air path 16 collides with the indentation 24 and is reflected and flows toward the reverse airflow 17 efficiently. Configure.

上記構成により、送風手段21から送られたガスが加熱手段18を通過する際に加熱され、この加熱されたガスが順風路16を通り抜け、くぼみ部24で反射して逆風路17に導かれ、逆風路17を通って送風手段21に戻るようになる。このようなガスの流れをつくることで、加熱炉14内の温度分布のばらつきをなくすことができ、接着剤を均一に硬化させ確実な接着ができる。   With the above configuration, the gas sent from the blowing means 21 is heated when passing through the heating means 18, and the heated gas passes through the forward wind path 16, is reflected by the hollow portion 24, and is led to the reverse wind path 17. It returns to the air blowing means 21 through the reverse air passage 17. By creating such a gas flow, variations in the temperature distribution in the heating furnace 14 can be eliminated, and the adhesive can be uniformly cured and surely bonded.

また、加熱炉14には、図示しない加圧ポンプに接続され、窒素ガスを供給する供給管25と当該窒素ガスの出入を調整する供給バルブ26とにより構成された加圧手段27と、加熱炉14内のガスを排出する排気管28と当該ガスの出入を調整する排気バルブ29とにより構成された排気手段30とがそれぞれ接続されている。このような構成により、排気バルブ29を開放状態とし、窒素ガスを供給することで加熱炉14内を窒素ガス雰囲気に置換することができる。なお、加圧手段27から供給されるガスは、窒素ガスの他にアルゴンガス、ヘリウムガス等の不活性ガスを採用することができ、加熱炉14の開閉扉13を開放することによって、当該加熱炉14内に残留するガス成分の影響を受けて、基板CB、接着シートSの接着剤やチップCが酸化等の化学変化することを防止することができる。   Further, the heating furnace 14 is connected to a pressure pump (not shown), and includes a pressurizing means 27 configured by a supply pipe 25 for supplying nitrogen gas and a supply valve 26 for adjusting the flow of the nitrogen gas, and a heating furnace. The exhaust means 28 comprised by the exhaust pipe 28 which discharges | emits the gas in 14 and the exhaust valve 29 which adjusts the entrance / exit of the said gas is each connected. With such a configuration, the inside of the heating furnace 14 can be replaced with a nitrogen gas atmosphere by opening the exhaust valve 29 and supplying nitrogen gas. As the gas supplied from the pressurizing means 27, an inert gas such as an argon gas or a helium gas can be adopted in addition to the nitrogen gas. By opening the open / close door 13 of the heating furnace 14, the heating is performed. Under the influence of the gas component remaining in the furnace 14, it is possible to prevent the adhesive of the substrate CB and the adhesive sheet S and the chip C from undergoing chemical changes such as oxidation.

更に、加熱炉14には、その内部の所定ガスの濃度を検知するガス濃度検知手段としての窒素濃度センサ31が設けられている。これにより、上述の窒素ガス雰囲気に置換された否かの判断基準とすることができ、窒素ガス濃度が所定値に達したことを検知して前記排気バルブ29を閉鎖するように構成されている。   Further, the heating furnace 14 is provided with a nitrogen concentration sensor 31 as gas concentration detecting means for detecting the concentration of a predetermined gas inside the heating furnace 14. Thereby, it can be used as a criterion for determining whether or not the nitrogen gas atmosphere has been replaced, and the exhaust valve 29 is closed by detecting that the nitrogen gas concentration has reached a predetermined value. .

また、加熱炉14の内部には、当該加熱炉14内の圧力を検知する圧力検知手段としての圧力センサ32と、当該加熱炉14内の温度を検知する温度検知手段としての温度センサ33とが設けられている。これら圧力センサ32、温度センサ33及び前記窒素濃度センサ31によって検知されたデータは図示しない制御手段に出力され、当該出力されたデータを入力として制御手段が供給バルブ26や、排気バルブ29等を統括的にコントロールする。   Further, inside the heating furnace 14, there are a pressure sensor 32 as pressure detecting means for detecting the pressure in the heating furnace 14 and a temperature sensor 33 as temperature detecting means for detecting the temperature in the heating furnace 14. Is provided. Data detected by the pressure sensor 32, the temperature sensor 33, and the nitrogen concentration sensor 31 is output to a control unit (not shown). The control unit controls the supply valve 26, the exhaust valve 29, and the like using the output data as input. Control.

次に、上記半導体チップ接着装置1を用いて、基板CBにチップCを接着する動作を説明する。   Next, the operation of bonding the chip C to the substrate CB using the semiconductor chip bonding apparatus 1 will be described.

チップCが熱硬化性の接着シートSを介して基板CBの所定の位置に仮着された接着対象物Dを複数枚基板マガジンMに収納した後、この基板マガジンMの複数個をマガジンラックLに収納する。そして、開閉扉13を開け、支持レール20上を摺動させて加熱炉14内の所定の位置に当該マガジンラックLを配置する。   A plurality of substrate magazines M are accommodated in a plurality of substrate magazines M after bonding objects D temporarily attached to a predetermined position of the substrate CB via a thermosetting adhesive sheet S. Store in. Then, the opening / closing door 13 is opened, and the magazine rack L is arranged at a predetermined position in the heating furnace 14 by sliding on the support rail 20.

次いで、開閉扉13を閉じて加熱炉14を密閉した後、供給バルブ26を開放状態として加熱炉14内に窒素ガスを一定の流量で導入するとともに、排気バルブ29を開放し、加熱炉14内に残留する大気中に含まれるガスを排出していく。そして、窒素濃度センサ31によって加熱炉14内の窒素濃度が所定の値に達したことを検知して、図示しない制御手段によって、加熱炉14内が窒素雰囲気に置換されたと判断する。   Next, after opening and closing the door 13 and sealing the heating furnace 14, the supply valve 26 is opened, nitrogen gas is introduced into the heating furnace 14 at a constant flow rate, the exhaust valve 29 is opened, and the inside of the heating furnace 14 is opened. The gas contained in the atmosphere is discharged. Then, the nitrogen concentration sensor 31 detects that the nitrogen concentration in the heating furnace 14 has reached a predetermined value, and it is determined that the inside of the heating furnace 14 has been replaced with a nitrogen atmosphere by a control means (not shown).

次いで、排気バルブ29が閉鎖され、窒素ガスによる加熱炉14内の加圧が開始されることとなる。そして、圧力センサ32によって当該加熱炉14内が所定圧力となったことを検知して、その所定圧力を維持するとともに、加熱手段18が加熱を開始する。ここで、加熱炉14内が加圧状態になると、前記気泡Bが、接着シートSの接着剤層内に分散して取込まれて消失する。加圧中は、加熱炉14内に設けられた圧力センサ32により当該加熱炉14内の圧力が管理される。これにより、圧力の過不足が発生した場合でも、図示しない制御手段が供給バルブ26、排気バルブ29を駆使して加熱炉14内が所定の圧力に保たれるように制御される。   Next, the exhaust valve 29 is closed, and pressurization in the heating furnace 14 with nitrogen gas is started. Then, the pressure sensor 32 detects that the inside of the heating furnace 14 has reached a predetermined pressure, maintains the predetermined pressure, and the heating means 18 starts heating. Here, when the inside of the heating furnace 14 is in a pressurized state, the bubbles B are dispersed and taken into the adhesive layer of the adhesive sheet S and disappear. During pressurization, the pressure in the heating furnace 14 is managed by the pressure sensor 32 provided in the heating furnace 14. As a result, even when the pressure is excessive or insufficient, control means (not shown) is controlled so that the inside of the heating furnace 14 is maintained at a predetermined pressure by making full use of the supply valve 26 and the exhaust valve 29.

次いで、加熱手段18が作動されるとともに、モータ23が駆動されて回転羽根22を回転させると、回転羽根22により送られたガスが筒状部材15内の順風路16を通り抜け、加熱手段18を通過する際に加熱されてマガジンラックLや基板マガジンMの隙間を通過する。そして、開閉扉13に衝突したガスは、くぼみ部24によって反射して逆風路17に導かれ、当該逆風路17を通って回転羽根22まで戻るガスの流れがつくられる。これにより、加熱炉14内の温度分布のばらつきをなくして確実な接着を行うことができる。なお、加熱中は、加熱炉14内に設けられた温度センサ33により当該加熱炉14内の温度が管理される。これにより、温度の過不足が発生した場合でも、図示しない制御手段が加熱手段18を制御して加熱炉14内が所定の温度に保たれるようになっている。   Next, when the heating means 18 is activated and the motor 23 is driven to rotate the rotary blade 22, the gas sent by the rotary blade 22 passes through the forward air passage 16 in the cylindrical member 15, and the heating means 18 is passed through. When passing, it is heated and passes through the gap between the magazine rack L and the substrate magazine M. Then, the gas colliding with the opening / closing door 13 is reflected by the indented portion 24 and guided to the reverse air passage 17, and a gas flow returning to the rotary blade 22 through the reverse air passage 17 is created. Thereby, the dispersion | variation in the temperature distribution in the heating furnace 14 can be eliminated, and reliable adhesion can be performed. During heating, the temperature in the heating furnace 14 is managed by the temperature sensor 33 provided in the heating furnace 14. Thereby, even when the temperature is excessive or insufficient, a control means (not shown) controls the heating means 18 so that the inside of the heating furnace 14 is maintained at a predetermined temperature.

上記のように、加熱炉14内の圧力と温度が所定値になると、圧力センサ32、温度センサ33の管理の下所定時間維持されることになる。これにより、図3に示されるような気泡Bは、接着シートSの接着剤層に分散して取込まれて消失し、接着シートSが硬化して基板CBにチップCが完全に接着される(図4参照)。   As described above, when the pressure and temperature in the heating furnace 14 reach predetermined values, they are maintained for a predetermined time under the control of the pressure sensor 32 and the temperature sensor 33. As a result, the bubbles B as shown in FIG. 3 are dispersed and taken in the adhesive layer of the adhesive sheet S, disappear, the adhesive sheet S is cured, and the chip C is completely adhered to the substrate CB. (See FIG. 4).

上記のような状態で、所定時間が経過すると、加熱手段18及びモータ23の作動を停止する。そして、供給バルブ26は閉鎖され、排気バルブ29が開放されることによって、加熱炉14内が大気圧状態となる。この状態で、所定時間冷却した後、開閉扉13を開けてマガジンラックLを加熱炉14から取り出す。   In a state as described above, when a predetermined time elapses, the operation of the heating means 18 and the motor 23 is stopped. Then, the supply valve 26 is closed and the exhaust valve 29 is opened, whereby the inside of the heating furnace 14 is in an atmospheric pressure state. In this state, after cooling for a predetermined time, the door 13 is opened and the magazine rack L is taken out from the heating furnace 14.

上記のようにチップCを接着すれば、接着シートSと基板CBとの間に気泡が存在しない状態で接着シートSが完全に接着されるため、接着シートS本来の接着力でチップCが基板CBに接着することができる。また、加熱炉14内の窒素濃度を所定値に達した上で、加熱炉14内の加圧及び加熱が行われるように構成したため、基板CB、チップCや接着シートSの接着剤層がガス成分の影響を受けて酸化等の化学変化することを防止できる。   If the chip C is bonded as described above, the adhesive sheet S is completely bonded without any bubbles between the adhesive sheet S and the substrate CB. Can adhere to CB. Further, since the pressure and heating in the heating furnace 14 are performed after the nitrogen concentration in the heating furnace 14 reaches a predetermined value, the adhesive layer of the substrate CB, the chip C, and the adhesive sheet S is gas. It is possible to prevent chemical changes such as oxidation under the influence of components.

以上のように発明を実施するための最良の形態を説明したが、本発明はこれに限定されることはない。   Although the best mode for carrying out the invention has been described above, the present invention is not limited to this.

例えば、加熱手段18は、フィラメント19以外に加熱炉14内を加熱できるものであれば他のものでも採用することができる。   For example, as the heating means 18, other than the filament 19 can be used as long as it can heat the inside of the heating furnace 14.

また、ガス濃度検知手段を窒素濃度センサ31としたが、加圧に使用されるガスの種類によって種々の変更を行うことができる。また、排気されるべきガス成分の濃度を検出するセンサを採用することもできる。この場合、例えば、酸素濃度センサを使用し、排気手段30から排気されるガス中の酸素濃度が所定値以下に下がったことを検出して排気バルブ29等の制御を行うようにすればよい。   Further, although the gas concentration detection means is the nitrogen concentration sensor 31, various changes can be made depending on the type of gas used for pressurization. It is also possible to employ a sensor that detects the concentration of the gas component to be exhausted. In this case, for example, an oxygen concentration sensor may be used to control the exhaust valve 29 and the like by detecting that the oxygen concentration in the gas exhausted from the exhaust means 30 has dropped below a predetermined value.

更に、圧力検知手段、温度検知手段は、公知の検知機器を採用できる。   Furthermore, a known detection device can be adopted as the pressure detection means and the temperature detection means.

また、導風補助手段は、上記実施例に挙げた形状以外に、順風炉16から逆風路17にスムーズに向かう形状であれば限定されることはない。   In addition to the shape described in the above embodiment, the wind guide assisting means is not limited as long as it smoothly moves from the forward wind furnace 16 to the reverse wind path 17.

更に、加熱炉14内の気密性をよくするために、開閉扉13と加熱炉14との間にパッキン材を設けてもよい。このようなパッキン材としては、シリコーン樹脂、ウレタン、フッ素ゴム等の気密性を維持できるものであれば採用出来る。   Furthermore, a packing material may be provided between the open / close door 13 and the heating furnace 14 in order to improve the airtightness in the heating furnace 14. As such a packing material, any material that can maintain airtightness such as silicone resin, urethane, fluororubber, and the like can be used.

また、本発明の半導体チップ接着装置1は、接着シートの代りにペースト接着剤での接着にも適用できる。   The semiconductor chip bonding apparatus 1 of the present invention can also be applied to bonding with a paste adhesive instead of an adhesive sheet.

1 半導体チップ接着装置
14 加熱炉
15 筒状部材(導風手段)
16 順風路
17 逆風路
18 加熱手段
21 送風手段
24 くぼみ部(導風補助手段)
27 加圧手段
30 排気手段
31 窒素濃度センサ(ガス濃度検知手段)
32 圧力センサ(圧力検知手段)
33 温度センサ(温度検知手段)
C チップ
CB 基板
D 接着対象物
S 接着シート
DESCRIPTION OF SYMBOLS 1 Semiconductor chip bonding apparatus 14 Heating furnace 15 Cylindrical member (wind guide means)
16 Forward wind path 17 Reverse wind path 18 Heating means 21 Blowing means 24 Recessed part (wind guide auxiliary means)
27 Pressurizing means 30 Exhaust means 31 Nitrogen concentration sensor (gas concentration detecting means)
32 Pressure sensor (pressure detection means)
33 Temperature sensor (temperature detection means)
C Chip CB Substrate D Bonding object S Adhesive sheet

Claims (3)

基板上に熱硬化性の接着シートを介して半導体チップが仮着された接着対象物を加熱して接着する半導体チップ接着装置において、
加熱手段を含む加熱炉と、前記加熱炉内に所定のガスの供給を行って当該加熱炉内を加圧する加圧手段と、前記加熱炉内で少なくとも前記接着対象物を囲うように配置された導風手段と、前記加熱手段により加熱された前記加熱炉内のガスを前記接着対象物方向に導く送風手段とを有し、
前記導風手段の内側が前記加熱されたガスの順風路を形成するとともに、前記導風手段の外側と加熱炉の内壁とで接着対象物を通過したガスを前記送風手段方向に導く逆風路を形成することを特徴とする半導体チップ接着装置。
In a semiconductor chip bonding apparatus that heats and bonds a bonding object in which a semiconductor chip is temporarily attached to a substrate via a thermosetting adhesive sheet,
A heating furnace including a heating means, a pressurizing means for supplying a predetermined gas into the heating furnace to pressurize the heating furnace, and disposed so as to surround at least the bonding object in the heating furnace. Air blowing means, and air blowing means for guiding the gas in the heating furnace heated by the heating means toward the bonding target,
An inner side of the air guide means forms a forward air path for the heated gas, and a reverse air path that guides the gas that has passed through the object to be bonded in the direction of the blower means between the outside of the air guide means and the inner wall of the heating furnace. A semiconductor chip bonding apparatus characterized by forming.
前記接着対象物を通過したガスを前記逆風路に導く導風補助手段が設けられていることを特徴とする請求項1に記載の半導体チップ接着装置。   The semiconductor chip bonding apparatus according to claim 1, further comprising a wind guide auxiliary unit that guides the gas that has passed through the bonding object to the reverse air path. 請求項1または請求項2記載の半導体チップ接着装置を用いて、基板上に熱硬化性の接着シートを介して半導体チップが仮着された接着対象物を加熱して接着する半導体チップ接着方法であって、
前記接着対象物を加熱炉内の導風手段内側に収納し、加熱炉内を所定の圧力に加圧する工程と、加熱炉内のガスを加熱し、この加熱されたガスを前記導風手段内の接着対象物に導いて当該接着対象物を所定の温度に加熱する工程とを含む、ことを特徴とする半導体チップ接着方法。
A semiconductor chip bonding method for heating and bonding a bonding object in which a semiconductor chip is temporarily attached to a substrate via a thermosetting adhesive sheet, using the semiconductor chip bonding apparatus according to claim 1 or 2. There,
The object to be bonded is housed inside the air guide means in the heating furnace, the inside of the heating furnace is pressurized to a predetermined pressure, the gas in the heating furnace is heated, and the heated gas is stored in the air guide means. A method of bonding a semiconductor chip to the bonding object, and heating the bonding object to a predetermined temperature.
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