JP4625828B2 - Semiconductor chip bonding apparatus and bonding method - Google Patents

Semiconductor chip bonding apparatus and bonding method Download PDF

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JP4625828B2
JP4625828B2 JP2007149247A JP2007149247A JP4625828B2 JP 4625828 B2 JP4625828 B2 JP 4625828B2 JP 2007149247 A JP2007149247 A JP 2007149247A JP 2007149247 A JP2007149247 A JP 2007149247A JP 4625828 B2 JP4625828 B2 JP 4625828B2
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heating furnace
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furnace
semiconductor chip
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JP2008305842A (en
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栄一 入江
仁彦 河崎
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Lintec Corp
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83856—Pre-cured adhesive, i.e. B-stage adhesive
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    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor

Description

本発明は、熱硬化性の接着シートを介して半導体チップを基板に接着するための半導体チップ接着装置及び接着方法に関する。   The present invention relates to a semiconductor chip bonding apparatus and bonding method for bonding a semiconductor chip to a substrate via a thermosetting adhesive sheet.

一般に、回路が形成された半導体ウエハ（以下、「ウエハ」という）をダイシング工程で個々の半導体チップ（以下、「チップ」という）に切断した後、ダイボンディング工程等において各チップを配線パターンを有する基板の所定の位置、つまり、電極箇所に接着することが行われている。このようにチップを基板にダイボンディングする場合、その前工程で熱硬化性の接着シートがウエハ裏面に予め貼付される。   Generally, after a semiconductor wafer (hereinafter referred to as “wafer”) on which a circuit is formed is cut into individual semiconductor chips (hereinafter referred to as “chips”) in a dicing process, each chip has a wiring pattern in a die bonding process or the like. Bonding to a predetermined position of the substrate, that is, an electrode location is performed. Thus, when die-bonding a chip | tip to a board | substrate, the thermosetting adhesive sheet is previously affixed on the wafer back surface in the pre-process.

熱硬化性の接着シートを貼付する方法は特許文献１で知られている。この特許文献１記載のものでは、接着シートとカバーシートとを重ね合わせた状態の原シートをウエハの裏面に貼付する。次に、ウエハに貼付された原シートをウエハの周縁に沿って切断した後、原シートを所定温度に加熱して接着シートを接着する。そして、上記のようにダイシング工程で切断された各チップからカバーシートを剥離し、チップ裏面に接着シートのみが接着された状態とする。そして、チップが基板に仮着され、この状態で所定の温度に加熱され、接着シートの接着剤が硬化することによって接着が行われる。
特開２００３−２５７８９８号公報 A method of applying a thermosetting adhesive sheet is known from Patent Document 1. In the one described in Patent Document 1, an original sheet in a state where an adhesive sheet and a cover sheet are overlapped is attached to the back surface of the wafer. Next, after cutting the original sheet affixed to the wafer along the periphery of the wafer, the original sheet is heated to a predetermined temperature to bond the adhesive sheet. And a cover sheet is peeled from each chip | tip cut | disconnected by the dicing process as mentioned above, and it is set as the state by which only the adhesive sheet was adhere | attached on the chip | tip back surface. And a chip | tip is temporarily attached to a board | substrate, and it adheres by heating to predetermined temperature in this state, and hardening | curing the adhesive agent of an adhesive sheet.
JP 2003-257898 A

上記特許文献１記載のものでは、ウエハに接着シートを貼付するときに、ローラを介して接着シートを湾曲させることによって、ウエハとの間の空気を外方へ追い出しつつ接着が行われる。このため、ウエハと接着シートとの間には気泡が混入することなく貼付が行える。然し、カバーシートを剥離した各チップを基板に仮着するときには、前記と同様にチップを湾曲させて接着することができないため、接着シートと基板との間に気泡が混入してしまう。この気泡は、加熱によって完全接着させた後も消失せずに残るため、接着シートと基板との接着面積が小さくなってしまい、接着力が不足し、接着されたチップが外れてしまうという不具合が発生する。なお、本発明において、接着シートの完全接着とは、接着シートが熱によって硬化を完了した状態のことを意味し、仮着とは硬化完了前の状態のことをいう（以降同様）。   In the thing of the said patent document 1, when sticking an adhesive sheet to a wafer, it adhere | attaches, expelling the air between wafers outward by curving an adhesive sheet via a roller. For this reason, it can stick without a bubble mixing between a wafer and an adhesive sheet. However, when each chip from which the cover sheet has been peeled is temporarily attached to the substrate, the chip cannot be bent and bonded in the same manner as described above, so that air bubbles are mixed between the adhesive sheet and the substrate. Since the bubbles remain without disappearing even after being completely bonded by heating, the bonding area between the adhesive sheet and the substrate becomes small, the adhesive force is insufficient, and the bonded chip comes off. appear. In the present invention, the complete adhesion of the adhesive sheet means a state in which the adhesive sheet has been cured by heat, and temporary attachment refers to a state before the completion of curing (hereinafter the same).

そこで、本発明の課題は、上記点に鑑み、気泡が混入したままの状態にすることなく、熱硬化性の接着シートを介してチップを基板に確実に接着できる半導体チップ接着装置及び接着方法を提供することにある。   Therefore, in view of the above points, an object of the present invention is to provide a semiconductor chip bonding apparatus and a bonding method capable of reliably bonding a chip to a substrate via a thermosetting adhesive sheet without causing bubbles to remain mixed. It is to provide.

上記課題を解決するために、請求項１記載の半導体チップ接着装置は、基板上に熱硬化性の接着シートを介して半導体チップが仮着された接着対象物を加熱して接着する半導体チップ接着装置において、加熱手段を含む加熱炉と、前記加熱炉内に所定のガスの供給を行って当該加熱炉内を加圧する加圧手段と、前記加熱炉内から排気を行う排気手段と、前記加熱炉内部のガス濃度を検知するガス濃度検知手段とを有し、前記加熱炉内で少なくとも前記接着対象物を囲うように配置された導風手段と、前記加熱手段により加熱された前記加熱炉内のガスを前記接着対象物方向に導く送風手段とを更に有し、前記導風手段の内側が前記加熱されたガスの順風路を形成するとともに、前記導風手段の外側と加熱炉の内壁とで接着対象物を通過したガスを前記送風手段方向に導く逆風路を形成することを特徴とする。 In order to solve the above-mentioned problem, the semiconductor chip bonding apparatus according to claim 1 is a semiconductor chip bonding method in which an object to be bonded, in which a semiconductor chip is temporarily attached to a substrate via a thermosetting adhesive sheet, is heated and bonded. in the apparatus, a heating furnace comprising a pressurized heat means, a pressurizing means for pressurizing the furnace by performing the supply of the predetermined gas in the heating furnace, and an exhaust means for performing exhaust from the heating furnace, wherein A gas concentration detecting means for detecting a gas concentration inside the heating furnace, an air guide means arranged so as to surround at least the bonding object in the heating furnace, and the heating furnace heated by the heating means. An air blowing means for guiding the gas in the direction of the object to be bonded, and the inside of the air guiding means forms a forward air passage for the heated gas, and the outside of the air guiding means and the inner wall of the heating furnace. G The and forming a headwind path leading to the blowing means direction.

なお、上記において、排気手段の開放状態とは、所定のガスの供給を行うことによって加熱炉内に残留するガス成分が加熱炉外に排出される状態、又は前記ガス成分が真空ポンプなどにより強制的に加熱炉外に排出される状態をいい、他方で、排気手段の閉鎖状態とは、加熱炉内からのガスの排出が停止された状態をいう（以降同様）。   In the above description, the exhaust state of the exhaust means means a state in which a gas component remaining in the heating furnace is discharged out of the heating furnace by supplying a predetermined gas, or the gas component is forced by a vacuum pump or the like. In other words, the exhaust state outside the heating furnace refers to a state where the exhaust means is closed, and the exhaust state of the gas from the heating furnace is stopped (the same applies hereinafter).

また、前記加熱炉内の圧力を検知する圧力検知手段と、前記加熱炉内の温度を検知する温度検知手段とを更に有し、前記圧力検知手段が所定の圧力に達したことを検知して前記加熱炉内の加熱が開始されるとともに、前記圧力検知手段と温度検知手段とで加熱炉内の圧力と温度とが所定値に維持されるように構成してもよい。   Further, the apparatus further comprises pressure detection means for detecting the pressure in the heating furnace and temperature detection means for detecting the temperature in the heating furnace, and detects that the pressure detection means has reached a predetermined pressure. While heating in the heating furnace is started, the pressure and temperature detection means and the temperature detection means may be configured to maintain the pressure and temperature in the heating furnace at predetermined values.

また、前記接着対象物を通過したガスを前記逆風路に導く導風補助手段が設けた構成としてもよい。   Moreover, it is good also as a structure provided with the wind guidance auxiliary | assistance means which guides the gas which passed the said adhesion | attachment target object to the said reverse wind path.

さらに、上記課題を解決するために、請求項３記載の半導体チップ接着方法は、請求項１または請求項２記載の半導体チップ接着装置を用いて、基板上に熱硬化性の接着シートを介して半導体チップが仮着された接着対象物を加熱して接着する半導体チップ接着方法であって、前記接着対象物を加熱炉内の導風手段内側に収納し、加熱炉内を所定のガス雰囲気に置換する工程と、所定のガスで置換された加熱炉内を所定の圧力に加圧する工程と、加熱炉内のガスを加熱し、この加熱されたガスを前記導風手段内の接着対象物に導いて当該接着対象物を所定の温度に加熱する工程とを含む、ことを特徴とする。この場合、前記加熱炉内の加圧は、当該加熱炉内の所定のガス濃度が所定値に達した後に開始され、前記加熱炉内の加熱は、当該加熱炉内の圧力が所定値に達した後に開始されるようにしてもよい。 Furthermore, in order to solve the said subject, the semiconductor chip bonding | attaching method of Claim 3 uses the semiconductor chip bonding | attachment apparatus of Claim 1 or Claim 2, and put a thermosetting adhesive sheet on a board | substrate. a semiconductor chip bonding method in which the semiconductor chip is bonded by heating the adhesive object which is temporarily attached to accommodate the bonding targets to air guide means inside the pressurized hot furnace, pressurized hot furnace a predetermined gas A step of substituting with the atmosphere, a step of pressurizing the inside of the heating furnace replaced with a predetermined gas to a predetermined pressure, heating the gas in the heating furnace , and bonding the heated gas to the object in the air guide means And a step of guiding the object to an object and heating the object to be bonded to a predetermined temperature. In this case, the pressurization in the heating furnace is started after the predetermined gas concentration in the heating furnace reaches a predetermined value, and the heating in the heating furnace reaches the predetermined value in the heating furnace. You may make it start after.

本発明の半導体チップ接着装置においては、仮着時に接着シートと基板との間に気泡が混入していたとしても、加圧することによってその気泡は接着シートの接着剤層に分散して取り込まれて消失する。この状態で、加熱炉内を所定温度に加熱することで、熱硬化性の接着シートが硬化してチップが基板に完全に接着される。これにより、接着シートの接着面積が不足することに起因した接着力の低下を防止し、接着されたチップが外れてしまうという不具合を解消し、信頼性の高い半導体チップ接着装置を提供することができる。   In the semiconductor chip bonding apparatus of the present invention, even if bubbles are mixed between the adhesive sheet and the substrate during temporary attachment, the bubbles are dispersed and taken into the adhesive layer of the adhesive sheet by applying pressure. Disappear. In this state, by heating the inside of the heating furnace to a predetermined temperature, the thermosetting adhesive sheet is cured and the chip is completely bonded to the substrate. Accordingly, it is possible to prevent a decrease in adhesive force due to a lack of an adhesive area of the adhesive sheet, eliminate a problem that the bonded chip is detached, and provide a highly reliable semiconductor chip bonding apparatus. it can.

また、接着対象物の出し入れを行うときに、加熱炉内が大気開放されてしまったとしても、加圧に先立って加熱炉内をガス濃度検知手段の管理の下、所定のガス雰囲気に置換することができる。つまり、例えば、加熱炉内を不活性ガス雰囲気とすることで、加熱炉内に残留する大気中に含まれるガス成分の影響を受けて、基板のリードフレーム（銅薄膜等）、接着シートの接着剤やチップが酸化等の化学変化することを防止することができる。   Further, even when the inside of the heating furnace is opened to the atmosphere when the object to be bonded is taken in and out, the inside of the heating furnace is replaced with a predetermined gas atmosphere under the control of the gas concentration detection means prior to pressurization. be able to. In other words, for example, by setting the inside of the heating furnace to an inert gas atmosphere, it is affected by the gas components contained in the atmosphere remaining in the heating furnace, and adhesion of the lead frame (copper thin film, etc.) of the substrate and the adhesive sheet It is possible to prevent the chemical change such as oxidation of the agent and the chip.

更に、前記加熱炉内の圧力を検知する圧力検知手段と、温度を検知する温度検知手段とを設けたことによって、接着シートの設計上の接着条件を確実に満たしてチップを基板に接着することができる。   Furthermore, by providing a pressure detecting means for detecting the pressure in the heating furnace and a temperature detecting means for detecting the temperature, the bonding condition on the design of the adhesive sheet is surely satisfied and the chip is bonded to the substrate. Can do.

また、導風手段と送風手段を備える構成を採用することで、送風手段から送られたガスが加熱手段を通過する際に加熱され、この加熱されたガスが接着対象物の周辺を通り抜けるように導かれ、更に、逆風路を通って送風手段に戻るように導かれる。このようなガスの流れをつくることで、加熱炉内の温度分布のばらつきをなくすことができ、より確実な接着が可能となる。   In addition, by adopting a configuration including the air guiding means and the air blowing means, the gas sent from the air blowing means is heated when passing through the heating means, and the heated gas passes through the periphery of the object to be bonded. Then, it is guided to return to the blowing means through the reverse wind path. By creating such a gas flow, variations in temperature distribution in the heating furnace can be eliminated, and more reliable bonding is possible.

更に、導風補助手段を設けた構成を採用すれば、順風路を通り抜けたガスが効率よく逆風路に導かれるため、より一層加熱炉内の温度分布のばらつきをなくすことができる。   Furthermore, if the structure provided with the wind guide auxiliary means is adopted, the gas passing through the forward wind path is efficiently guided to the reverse wind path, so that the variation in temperature distribution in the heating furnace can be further eliminated.

図１を参照して、１は、熱硬化性の接着シートＳを介してチップＣが仮着された基板としての基板ＣＢ（図３参照）を完全に接着するための本実施の形態の半導体チップ接着装置である。   Referring to FIG. 1, reference numeral 1 denotes a semiconductor according to the present embodiment for completely bonding a substrate CB (see FIG. 3) as a substrate to which a chip C is temporarily attached via a thermosetting adhesive sheet S. It is a chip bonding apparatus.

前記半導体チップ接着装置１は、外装ケース１１を具備し、その左側面には開口部１２が形成され、この開口部１２を開閉する開閉扉１３が装着されている。外装ケース１１内には、一側面を開口したベルジャ型の加熱炉１４が配置され、開閉扉１３を閉じると、加熱炉１４が密閉されるようになっている。本実施の形態の場合、配線パターンを有する基板ＣＢの所定の位置に熱硬化性の接着シートＳを介してチップＣが仮着されたものを接着対象物Ｄとし、基板マガジンＭに前記接着対象物Ｄの複数枚を所定の間隔を置いて収納し、この基板マガジンＭの複数個をマガジンラックＬに収納したものが加熱炉１４内に設置されるようになっている（図３参照）。   The semiconductor chip bonding apparatus 1 includes an exterior case 11, an opening 12 is formed on the left side surface, and an opening / closing door 13 that opens and closes the opening 12 is mounted. In the exterior case 11, a bell jar type heating furnace 14 having one side opened is disposed. When the door 13 is closed, the heating furnace 14 is sealed. In the case of the present embodiment, an object to which a chip C is temporarily attached via a thermosetting adhesive sheet S at a predetermined position of a substrate CB having a wiring pattern is defined as an object to be bonded D, and the object to be bonded to the substrate magazine M. A plurality of articles D are stored at a predetermined interval, and a plurality of substrate magazines M stored in a magazine rack L are installed in the heating furnace 14 (see FIG. 3).

加熱炉１４内には、当該加熱炉１４の長手方向に沿って延びる導風手段を構成する筒状部材１５が設けられ、この筒状部材１５の内部が円筒状の順風路１６を形成するとともに、加熱炉１４の内壁との間で環状の逆風路１７を形成する。筒状部材１５の右側には加熱手段１８が取り付けられている。加熱手段１８は、コイル状のフィラメント１９によって構成され（図２参照）、図示しない電源によってフィラメント１９に所定の電流を流すことで発熱する。また、筒状部材１５内には、その筒状部材１５の中心から下側にオフセットさせて２本の支持レール２０が設けられ、各支持レール２０により、前記マガジンラックＬが所定の位置で水平に保持されるようになっている。   In the heating furnace 14, a cylindrical member 15 constituting an air guide means extending along the longitudinal direction of the heating furnace 14 is provided, and the inside of the cylindrical member 15 forms a cylindrical forward air passage 16. An annular reverse air passage 17 is formed between the inner wall of the heating furnace 14. A heating means 18 is attached to the right side of the cylindrical member 15. The heating means 18 is composed of a coiled filament 19 (see FIG. 2), and generates heat when a predetermined current is passed through the filament 19 by a power source (not shown). Further, two support rails 20 are provided in the cylindrical member 15 so as to be offset downward from the center of the cylindrical member 15, and the magazine rack L is horizontally placed at a predetermined position by the support rails 20. Is supposed to be retained.

加熱炉１４の右側には送風手段２１が取り付けられている。この送風手段２１は、加熱炉１４の内壁と筒状部材１５の右端部との間の空間に位置するプロペラ式の回転羽根２２と、この回転羽根２２を駆動するモータ２３とから構成されている。そして、モータ２３を駆動して回転羽根２２を回転させると、筒状部材１５内の順風路１６を通って開閉扉１３に向かうガスの流れが生じるようになっている。   A blowing means 21 is attached to the right side of the heating furnace 14. The blower means 21 includes a propeller-type rotary blade 22 located in a space between the inner wall of the heating furnace 14 and the right end portion of the cylindrical member 15, and a motor 23 that drives the rotary blade 22. . When the motor 23 is driven to rotate the rotary blade 22, a gas flow toward the open / close door 13 through the forward air passage 16 in the cylindrical member 15 is generated.

開閉扉１３の内面には、開口部１２に対向させて、相互に連続するくぼみ部２４が形成されている。くぼみ部２４は、前記順風路１６を通過してきたガスがこのくぼみ部２４に衝突して反射し、効率よく逆風路１７に向かって流れるように設計されており、くぼみ部２４が導風補助手段を構成する。   On the inner surface of the open / close door 13, recessed portions 24 that are continuous with each other are formed facing the opening 12. The indentation 24 is designed so that the gas that has passed through the forward air path 16 collides with the indentation 24 and is reflected and flows toward the reverse airflow 17 efficiently. Configure.

上記構成により、送風手段２１から送られたガスが加熱手段１８を通過する際に加熱され、この加熱されたガスが順風路１６を通り抜け、くぼみ部２４で反射して逆風路１７に導かれ、逆風路１７を通って送風手段２１に戻るようになる。このようなガスの流れをつくることで、加熱炉１４内の温度分布のばらつきをなくすことができ、接着剤を均一に硬化させ確実な接着ができる。   With the above configuration, the gas sent from the blowing means 21 is heated when passing through the heating means 18, and the heated gas passes through the forward wind path 16, is reflected by the hollow portion 24, and is led to the reverse wind path 17. It returns to the air blowing means 21 through the reverse air passage 17. By creating such a gas flow, variations in the temperature distribution in the heating furnace 14 can be eliminated, and the adhesive can be uniformly cured and surely bonded.

また、加熱炉１４には、図示しない加圧ポンプに接続され、窒素ガスを供給する供給管２５と当該窒素ガスの出入を調整する供給バルブ２６とにより構成された加圧手段２７と、加熱炉１４内のガスを排出する排気管２８と当該ガスの出入を調整する排気バルブ２９とにより構成された排気手段３０とがそれぞれ接続されている。このような構成により、排気バルブ２９を開放状態とし、窒素ガスを供給することで加熱炉１４内を窒素ガス雰囲気に置換することができる。なお、加圧手段２７から供給されるガスは、窒素ガスの他にアルゴンガス、ヘリウムガス等の不活性ガスを採用することができ、加熱炉１４の開閉扉１３を開放することによって、当該加熱炉１４内に残留するガス成分の影響を受けて、基板ＣＢ、接着シートＳの接着剤やチップＣが酸化等の化学変化することを防止することができる。   Further, the heating furnace 14 is connected to a pressure pump (not shown), and includes a pressurizing means 27 configured by a supply pipe 25 for supplying nitrogen gas and a supply valve 26 for adjusting the flow of the nitrogen gas, and a heating furnace. The exhaust means 28 comprised by the exhaust pipe 28 which discharges | emits the gas in 14 and the exhaust valve 29 which adjusts the entrance / exit of the said gas is each connected. With such a configuration, the inside of the heating furnace 14 can be replaced with a nitrogen gas atmosphere by opening the exhaust valve 29 and supplying nitrogen gas. As the gas supplied from the pressurizing means 27, an inert gas such as an argon gas or a helium gas can be adopted in addition to the nitrogen gas. By opening the open / close door 13 of the heating furnace 14, the heating is performed. Under the influence of the gas component remaining in the furnace 14, it is possible to prevent the adhesive of the substrate CB and the adhesive sheet S and the chip C from undergoing chemical changes such as oxidation.

更に、加熱炉１４には、その内部の所定ガスの濃度を検知するガス濃度検知手段としての窒素濃度センサ３１が設けられている。これにより、上述の窒素ガス雰囲気に置換された否かの判断基準とすることができ、窒素ガス濃度が所定値に達したことを検知して前記排気バルブ２９を閉鎖するように構成されている。   Further, the heating furnace 14 is provided with a nitrogen concentration sensor 31 as gas concentration detecting means for detecting the concentration of a predetermined gas inside the heating furnace 14. Thereby, it can be used as a criterion for determining whether or not the nitrogen gas atmosphere has been replaced, and the exhaust valve 29 is closed by detecting that the nitrogen gas concentration has reached a predetermined value. .

また、加熱炉１４の内部には、当該加熱炉１４内の圧力を検知する圧力検知手段としての圧力センサ３２と、当該加熱炉１４内の温度を検知する温度検知手段としての温度センサ３３とが設けられている。これら圧力センサ３２、温度センサ３３及び前記窒素濃度センサ３１によって検知されたデータは図示しない制御手段に出力され、当該出力されたデータを入力として制御手段が供給バルブ２６や、排気バルブ２９等を統括的にコントロールする。   Further, inside the heating furnace 14, there are a pressure sensor 32 as pressure detecting means for detecting the pressure in the heating furnace 14 and a temperature sensor 33 as temperature detecting means for detecting the temperature in the heating furnace 14. Is provided. Data detected by the pressure sensor 32, the temperature sensor 33, and the nitrogen concentration sensor 31 is output to a control unit (not shown). The control unit controls the supply valve 26, the exhaust valve 29, and the like using the output data as input. Control.

次に、上記半導体チップ接着装置１を用いて、基板ＣＢにチップＣを接着する動作を説明する。   Next, the operation of bonding the chip C to the substrate CB using the semiconductor chip bonding apparatus 1 will be described.

チップＣが熱硬化性の接着シートＳを介して基板ＣＢの所定の位置に仮着された接着対象物Ｄを複数枚基板マガジンＭに収納した後、この基板マガジンＭの複数個をマガジンラックＬに収納する。そして、開閉扉１３を開け、支持レール２０上を摺動させて加熱炉１４内の所定の位置に当該マガジンラックＬを配置する。   A plurality of substrate magazines M are accommodated in a plurality of substrate magazines M after bonding objects D temporarily attached to a predetermined position of the substrate CB via a thermosetting adhesive sheet S. Store in. Then, the opening / closing door 13 is opened, and the magazine rack L is arranged at a predetermined position in the heating furnace 14 by sliding on the support rail 20.

次いで、開閉扉１３を閉じて加熱炉１４を密閉した後、供給バルブ２６を開放状態として加熱炉１４内に窒素ガスを一定の流量で導入するとともに、排気バルブ２９を開放し、加熱炉１４内に残留する大気中に含まれるガスを排出していく。そして、窒素濃度センサ３１によって加熱炉１４内の窒素濃度が所定の値に達したことを検知して、図示しない制御手段によって、加熱炉１４内が窒素雰囲気に置換されたと判断する。   Next, after opening and closing the door 13 and sealing the heating furnace 14, the supply valve 26 is opened, nitrogen gas is introduced into the heating furnace 14 at a constant flow rate, the exhaust valve 29 is opened, and the inside of the heating furnace 14 is opened. The gas contained in the atmosphere is discharged. Then, the nitrogen concentration sensor 31 detects that the nitrogen concentration in the heating furnace 14 has reached a predetermined value, and it is determined that the inside of the heating furnace 14 has been replaced with a nitrogen atmosphere by a control means (not shown).

次いで、排気バルブ２９が閉鎖され、窒素ガスによる加熱炉１４内の加圧が開始されることとなる。そして、圧力センサ３２によって当該加熱炉１４内が所定圧力となったことを検知して、その所定圧力を維持するとともに、加熱手段１８が加熱を開始する。ここで、加熱炉１４内が加圧状態になると、前記気泡Ｂが、接着シートＳの接着剤層内に分散して取込まれて消失する。加圧中は、加熱炉１４内に設けられた圧力センサ３２により当該加熱炉１４内の圧力が管理される。これにより、圧力の過不足が発生した場合でも、図示しない制御手段が供給バルブ２６、排気バルブ２９を駆使して加熱炉１４内が所定の圧力に保たれるように制御される。   Next, the exhaust valve 29 is closed, and pressurization in the heating furnace 14 with nitrogen gas is started. Then, the pressure sensor 32 detects that the inside of the heating furnace 14 has reached a predetermined pressure, maintains the predetermined pressure, and the heating means 18 starts heating. Here, when the inside of the heating furnace 14 is in a pressurized state, the bubbles B are dispersed and taken into the adhesive layer of the adhesive sheet S and disappear. During pressurization, the pressure in the heating furnace 14 is managed by the pressure sensor 32 provided in the heating furnace 14. As a result, even when the pressure is excessive or insufficient, control means (not shown) is controlled so that the inside of the heating furnace 14 is maintained at a predetermined pressure by making full use of the supply valve 26 and the exhaust valve 29.

次いで、加熱手段１８が作動されるとともに、モータ２３が駆動されて回転羽根２２を回転させると、回転羽根２２により送られたガスが筒状部材１５内の順風路１６を通り抜け、加熱手段１８を通過する際に加熱されてマガジンラックＬや基板マガジンＭの隙間を通過する。そして、開閉扉１３に衝突したガスは、くぼみ部２４によって反射して逆風路１７に導かれ、当該逆風路１７を通って回転羽根２２まで戻るガスの流れがつくられる。これにより、加熱炉１４内の温度分布のばらつきをなくして確実な接着を行うことができる。なお、加熱中は、加熱炉１４内に設けられた温度センサ３３により当該加熱炉１４内の温度が管理される。これにより、温度の過不足が発生した場合でも、図示しない制御手段が加熱手段１８を制御して加熱炉１４内が所定の温度に保たれるようになっている。   Next, when the heating means 18 is activated and the motor 23 is driven to rotate the rotary blade 22, the gas sent by the rotary blade 22 passes through the forward air passage 16 in the cylindrical member 15, and the heating means 18 is passed through. When passing, it is heated and passes through the gap between the magazine rack L and the substrate magazine M. Then, the gas colliding with the opening / closing door 13 is reflected by the indented portion 24 and guided to the reverse air passage 17, and a gas flow returning to the rotary blade 22 through the reverse air passage 17 is created. Thereby, the dispersion | variation in the temperature distribution in the heating furnace 14 can be eliminated, and reliable adhesion can be performed. During heating, the temperature in the heating furnace 14 is managed by the temperature sensor 33 provided in the heating furnace 14. Thereby, even when the temperature is excessive or insufficient, a control means (not shown) controls the heating means 18 so that the inside of the heating furnace 14 is maintained at a predetermined temperature.

上記のように、加熱炉１４内の圧力と温度が所定値になると、圧力センサ３２、温度センサ３３の管理の下所定時間維持されることになる。これにより、図３に示されるような気泡Ｂは、接着シートＳの接着剤層に分散して取込まれて消失し、接着シートＳが硬化して基板ＣＢにチップＣが完全に接着される（図４参照）。   As described above, when the pressure and temperature in the heating furnace 14 reach predetermined values, they are maintained for a predetermined time under the control of the pressure sensor 32 and the temperature sensor 33. As a result, the bubbles B as shown in FIG. 3 are dispersed and taken in the adhesive layer of the adhesive sheet S, disappear, the adhesive sheet S is cured, and the chip C is completely adhered to the substrate CB. (See FIG. 4).

上記のような状態で、所定時間が経過すると、加熱手段１８及びモータ２３の作動を停止する。そして、供給バルブ２６は閉鎖され、排気バルブ２９が開放されることによって、加熱炉１４内が大気圧状態となる。この状態で、所定時間冷却した後、開閉扉１３を開けてマガジンラックＬを加熱炉１４から取り出す。   In a state as described above, when a predetermined time elapses, the operation of the heating means 18 and the motor 23 is stopped. Then, the supply valve 26 is closed and the exhaust valve 29 is opened, whereby the inside of the heating furnace 14 is in an atmospheric pressure state. In this state, after cooling for a predetermined time, the door 13 is opened and the magazine rack L is taken out from the heating furnace 14.

上記のようにチップＣを接着すれば、接着シートＳと基板ＣＢとの間に気泡が存在しない状態で接着シートＳが完全に接着されるため、接着シートＳ本来の接着力でチップＣが基板ＣＢに接着することができる。また、加熱炉１４内の窒素濃度を所定値に達した上で、加熱炉１４内の加圧及び加熱が行われるように構成したため、基板ＣＢ、チップＣや接着シートＳの接着剤層がガス成分の影響を受けて酸化等の化学変化することを防止できる。   If the chip C is bonded as described above, the adhesive sheet S is completely bonded without any bubbles between the adhesive sheet S and the substrate CB. Can adhere to CB. Further, since the pressure and heating in the heating furnace 14 are performed after the nitrogen concentration in the heating furnace 14 reaches a predetermined value, the adhesive layer of the substrate CB, the chip C, and the adhesive sheet S is gas. It is possible to prevent chemical changes such as oxidation under the influence of components.

以上のように発明を実施するための最良の形態を説明したが、本発明はこれに限定されることはない。   Although the best mode for carrying out the invention has been described above, the present invention is not limited to this.

例えば、加熱手段１８は、フィラメント１９以外に加熱炉１４内を加熱できるものであれば他のものでも採用することができる。   For example, as the heating means 18, other than the filament 19 can be used as long as it can heat the inside of the heating furnace 14.

また、ガス濃度検知手段を窒素濃度センサ３１としたが、加圧に使用されるガスの種類によって種々の変更を行うことができる。また、排気されるべきガス成分の濃度を検出するセンサを採用することもできる。この場合、例えば、酸素濃度センサを使用し、排気手段３０から排気されるガス中の酸素濃度が所定値以下に下がったことを検出して排気バルブ２９等の制御を行うようにすればよい。   Further, although the gas concentration detection means is the nitrogen concentration sensor 31, various changes can be made depending on the type of gas used for pressurization. It is also possible to employ a sensor that detects the concentration of the gas component to be exhausted. In this case, for example, an oxygen concentration sensor may be used to control the exhaust valve 29 and the like by detecting that the oxygen concentration in the gas exhausted from the exhaust means 30 has dropped below a predetermined value.

更に、圧力検知手段、温度検知手段は、公知の検知機器を採用できる。   Furthermore, a known detection device can be adopted as the pressure detection means and the temperature detection means.

また、導風補助手段は、上記実施例に挙げた形状以外に、順風炉１６から逆風路１７にスムーズに向かう形状であれば限定されることはない。   In addition to the shape described in the above embodiment, the wind guide assisting means is not limited as long as it smoothly moves from the forward wind furnace 16 to the reverse wind path 17.

更に、加熱炉１４内の気密性をよくするために、開閉扉１３と加熱炉１４との間にパッキン材を設けてもよい。このようなパッキン材としては、シリコーン樹脂、ウレタン、フッ素ゴム等の気密性を維持できるものであれば採用出来る。   Furthermore, a packing material may be provided between the open / close door 13 and the heating furnace 14 in order to improve the airtightness in the heating furnace 14. As such a packing material, any material that can maintain airtightness such as silicone resin, urethane, fluororubber, and the like can be used.

また、本発明の半導体チップ接着装置１は、接着シートの代りにペースト接着剤での接着にも適用できる。   The semiconductor chip bonding apparatus 1 of the present invention can also be applied to bonding with a paste adhesive instead of an adhesive sheet.

本発明の半導体チップ接着装置の概略断面図。1 is a schematic sectional view of a semiconductor chip bonding apparatus according to the present invention. 図１のＡ−Ａ線に沿った断面図。Sectional drawing along the AA line of FIG. 基板に接着シートを介して半導体チップが仮着された接着対象物の半導体チップ接着装置への配置を説明する図。The figure explaining arrangement | positioning to the semiconductor chip bonding apparatus of the adhesion target object by which the semiconductor chip was temporarily attached to the board | substrate through the adhesive sheet. 本発明の半導体チップの接着方法を実施した後の接着対象物を示す拡大断面図。The expanded sectional view which shows the adhesion target object after implementing the adhesion method of the semiconductor chip of the present invention.

符号の説明Explanation of symbols

１ 半導体チップ接着装置
１４ 加熱炉
１５ 筒状部材（導風手段）
１６ 順風路
１７ 逆風路
２１ 送風手段
２４ くぼみ部（導風補助手段）
２７ 加圧手段
３０ 排気手段
３１ 窒素濃度センサ（ガス濃度検知手段）
３２ 圧力センサ（圧力検知手段）
３３ 温度センサ（温度検知手段）
Ｃ チップ
ＣＢ 基板
Ｄ 接着対象物
Ｓ 接着シート
DESCRIPTION OF SYMBOLS 1 Semiconductor chip bonding apparatus 14 Heating furnace 15 Cylindrical member (wind guide means)
16 Forward wind path 17 Reverse wind path 21 Blower means 24 Recessed part (wind guide auxiliary means)
27 Pressurizing means 30 Exhaust means 31 Nitrogen concentration sensor (gas concentration detecting means)
32 Pressure sensor (pressure detection means)
33 Temperature sensor (temperature detection means)
C Chip CB Substrate D Bonding object S Adhesive sheet

Claims (4)

基板上に熱硬化性の接着シートを介して半導体チップが仮着された接着対象物を加熱して接着する半導体チップ接着装置において、
加熱手段を含む加熱炉と、前記加熱炉内に所定のガスの供給を行って当該加熱炉内を加圧する加圧手段と、前記加熱炉内から排気を行う排気手段と、前記加熱炉内部のガス濃度を検知するガス濃度検知手段とを有し、
前記加熱炉内で少なくとも前記接着対象物を囲うように配置された導風手段と、前記加熱手段により加熱された前記加熱炉内のガスを前記接着対象物方向に導く送風手段とを更に有し、
前記導風手段の内側が前記加熱されたガスの順風路を形成するとともに、前記導風手段の外側と加熱炉の内壁とで接着対象物を通過したガスを前記送風手段方向に導く逆風路を形成することを特徴とする半導体チップ接着装置。 In a semiconductor chip bonding apparatus that heats and bonds a bonding object in which a semiconductor chip is temporarily attached to a substrate via a thermosetting adhesive sheet,
A heating furnace comprising a pressurized heat means, a pressurizing means for pressurizing the furnace by performing the supply of the predetermined gas in the heating furnace, and an exhaust means for performing exhaust from the heating furnace, the inside of the furnace Gas concentration detecting means for detecting the gas concentration of
An air guide means disposed so as to surround at least the bonding object in the heating furnace, and a blower means for guiding the gas in the heating furnace heated by the heating means in the direction of the bonding object. ,
An inner side of the air guide means forms a forward air path for the heated gas, and a reverse air path that guides the gas that has passed through the object to be bonded in the direction of the blower means between the outside of the air guide means and the inner wall of the heating furnace A semiconductor chip bonding apparatus characterized by forming . 前記接着対象物を通過したガスを前記逆風路に導く導風補助手段が設けられていることを特徴とする請求項１に記載の半導体チップ接着装置。 The semiconductor chip bonding apparatus according to claim 1 , further comprising a wind guide auxiliary unit that guides the gas that has passed through the bonding object to the reverse air path. 請求項１または請求項２記載の半導体チップ接着装置を用いて、基板上に熱硬化性の接着シートを介して半導体チップが仮着された接着対象物を加熱して接着する半導体チップ接着方法であって、
前記接着対象物を加熱炉内の導風手段内側に収納し、加熱炉内を所定のガス雰囲気に置換する工程と、所定のガスで置換された加熱炉内を所定の圧力に加圧する工程と、
加熱炉内のガスを加熱し、この加熱されたガスを前記導風手段内の接着対象物に導いて当該接着対象物を所定の温度に加熱する工程とを含む、ことを特徴とする半導体チップ接着方法。 A semiconductor chip bonding method for heating and bonding a bonding object in which a semiconductor chip is temporarily attached to a substrate via a thermosetting adhesive sheet, using the semiconductor chip bonding apparatus according to claim 1 or 2. There,
The accommodating the bonding targets to air guide means inside the pressurized hot furnace, a step of replacing the pressurized hot furnace to a predetermined gas atmosphere, pressurizing the furnace substituted with a predetermined gas at a predetermined pressure Process,
Heating a gas in a heating furnace, guiding the heated gas to an object to be bonded in the air guide means, and heating the object to be bonded to a predetermined temperature. Bonding method. 前記加熱炉内の加圧は、当該加熱炉内の所定のガス濃度が所定値に達した後に開始され、前記加熱炉内の加熱は、当該加熱炉内の圧力が所定値に達した後に開始されることを特徴とする請求項３記載の半導体チップ接着方法。 Pressurization of the heating furnace, predetermined gas concentration in the furnace is started after a predetermined value, the heating of the heating furnace is started after the pressure of the furnace has reached to a predetermined value The semiconductor chip bonding method according to claim 3 , wherein:
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