JP2011063848A5 - - Google Patents

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Publication number
JP2011063848A5
JP2011063848A5 JP2009215414A JP2009215414A JP2011063848A5 JP 2011063848 A5 JP2011063848 A5 JP 2011063848A5 JP 2009215414 A JP2009215414 A JP 2009215414A JP 2009215414 A JP2009215414 A JP 2009215414A JP 2011063848 A5 JP2011063848 A5 JP 2011063848A5
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JP
Japan
Prior art keywords
film forming
computer
nickel
forming apparatus
program
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2009215414A
Other languages
English (en)
Japanese (ja)
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JP2011063848A (ja
JP5225957B2 (ja
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Publication date
Application filed filed Critical
Priority claimed from JP2009215414A external-priority patent/JP5225957B2/ja
Priority to JP2009215414A priority Critical patent/JP5225957B2/ja
Priority to US13/054,361 priority patent/US20120164328A1/en
Priority to PCT/JP2010/064573 priority patent/WO2011033917A1/ja
Priority to KR1020107026851A priority patent/KR101362176B1/ko
Priority to TW099131351A priority patent/TWI404822B/zh
Publication of JP2011063848A publication Critical patent/JP2011063848A/ja
Publication of JP2011063848A5 publication Critical patent/JP2011063848A5/ja
Publication of JP5225957B2 publication Critical patent/JP5225957B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009215414A 2009-09-17 2009-09-17 成膜方法および記憶媒体 Expired - Fee Related JP5225957B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009215414A JP5225957B2 (ja) 2009-09-17 2009-09-17 成膜方法および記憶媒体
US13/054,361 US20120164328A1 (en) 2009-09-17 2010-08-26 Film formation method and storage medium
PCT/JP2010/064573 WO2011033917A1 (ja) 2009-09-17 2010-08-27 成膜方法および記憶媒体
KR1020107026851A KR101362176B1 (ko) 2009-09-17 2010-08-27 성막 방법 및 기억 매체
TW099131351A TWI404822B (zh) 2009-09-17 2010-09-16 Film forming method and memory media (2)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009215414A JP5225957B2 (ja) 2009-09-17 2009-09-17 成膜方法および記憶媒体

Publications (3)

Publication Number Publication Date
JP2011063848A JP2011063848A (ja) 2011-03-31
JP2011063848A5 true JP2011063848A5 (enExample) 2011-05-19
JP5225957B2 JP5225957B2 (ja) 2013-07-03

Family

ID=43758526

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009215414A Expired - Fee Related JP5225957B2 (ja) 2009-09-17 2009-09-17 成膜方法および記憶媒体

Country Status (5)

Country Link
US (1) US20120164328A1 (enExample)
JP (1) JP5225957B2 (enExample)
KR (1) KR101362176B1 (enExample)
TW (1) TWI404822B (enExample)
WO (1) WO2011033917A1 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9257302B1 (en) 2004-03-25 2016-02-09 Novellus Systems, Inc. CVD flowable gap fill
US7524735B1 (en) 2004-03-25 2009-04-28 Novellus Systems, Inc Flowable film dielectric gap fill process
US9245739B2 (en) 2006-11-01 2016-01-26 Lam Research Corporation Low-K oxide deposition by hydrolysis and condensation
US8278224B1 (en) * 2009-09-24 2012-10-02 Novellus Systems, Inc. Flowable oxide deposition using rapid delivery of process gases
US9719169B2 (en) 2010-12-20 2017-08-01 Novellus Systems, Inc. System and apparatus for flowable deposition in semiconductor fabrication
JP5725454B2 (ja) * 2011-03-25 2015-05-27 株式会社アルバック ＮｉＳｉ膜の形成方法、シリサイド膜の形成方法、シリサイドアニール用金属膜の形成方法、真空処理装置、及び成膜装置
JP5826698B2 (ja) * 2011-04-13 2015-12-02 株式会社アルバック Ｎｉ膜の形成方法
JP5661006B2 (ja) * 2011-09-02 2015-01-28 東京エレクトロン株式会社 ニッケル膜の成膜方法
KR101841811B1 (ko) 2011-10-07 2018-03-23 도쿄엘렉트론가부시키가이샤 코발트계 막 형성 방법, 코발트계 막 형성 재료 및 신규 화합물
JP5806912B2 (ja) * 2011-11-08 2015-11-10 株式会社アルバック 液体原料の気化方法
US8846536B2 (en) 2012-03-05 2014-09-30 Novellus Systems, Inc. Flowable oxide film with tunable wet etch rate
JP5917351B2 (ja) * 2012-09-20 2016-05-11 東京エレクトロン株式会社 金属膜の成膜方法
US20140206190A1 (en) * 2013-01-23 2014-07-24 International Business Machines Corporation Silicide Formation in High-Aspect Ratio Structures
JP6308584B2 (ja) * 2013-02-28 2018-04-11 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、基板処理システム及びプログラム
US9847222B2 (en) 2013-10-25 2017-12-19 Lam Research Corporation Treatment for flowable dielectric deposition on substrate surfaces
US10049921B2 (en) 2014-08-20 2018-08-14 Lam Research Corporation Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor
US10388546B2 (en) 2015-11-16 2019-08-20 Lam Research Corporation Apparatus for UV flowable dielectric
US9916977B2 (en) 2015-11-16 2018-03-13 Lam Research Corporation Low k dielectric deposition via UV driven photopolymerization
JP6559107B2 (ja) * 2016-09-09 2019-08-14 東京エレクトロン株式会社 成膜方法および成膜システム
TWI815915B (zh) * 2018-06-27 2023-09-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法
WO2020214732A1 (en) 2019-04-19 2020-10-22 Lam Research Corporation Rapid flush purging during atomic layer deposition
JP7161767B2 (ja) 2019-04-22 2022-10-27 気相成長株式会社 形成材料、形成方法、及び新規化合物
JP7332211B2 (ja) * 2019-04-22 2023-08-23 気相成長株式会社 新規化合物および製造方法
KR102707825B1 (ko) * 2019-04-23 2024-09-24 삼성전자주식회사 코발트 전구체, 이를 이용한 코발트 함유막의 제조 방법 및 이를 이용한 반도체 소자의 제조 방법
US12315466B2 (en) 2023-04-26 2025-05-27 JoysonQuin Automotive Systems North America, LLC Front-lit user interface

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0231541A (ja) * 1988-07-20 1990-02-01 Nec Corp 複合電子交換機
US6387803B2 (en) * 1997-01-29 2002-05-14 Ultratech Stepper, Inc. Method for forming a silicide region on a silicon body
US7105434B2 (en) * 1999-10-02 2006-09-12 Uri Cohen Advanced seed layery for metallic interconnects
KR101437250B1 (ko) * 2002-11-15 2014-10-13 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 금속 아미디네이트를 이용한 원자층 증착법
WO2008008319A2 (en) * 2006-07-10 2008-01-17 President And Fellows Of Harvard College Selective sealing of porous dielectric materials
JP2008031541A (ja) * 2006-07-31 2008-02-14 Tokyo Electron Ltd Ｃｖｄ成膜方法およびｃｖｄ成膜装置
KR101629965B1 (ko) * 2007-04-09 2016-06-13 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 구리 배선용 코발트 질화물층 및 이의 제조방법
JP2011063849A (ja) * 2009-09-17 2011-03-31 Tokyo Electron Ltd 成膜方法および記憶媒体

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