JP2011061011A - Semiconductor light-emitting element, method of manufacturing the same, image display device, and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element allowing a base layer to be formed in a relatively short time. <P>SOLUTION: The semiconductor light-emitting element includes: (A) a laminated structure 10B comprising a first compound semiconductor layer 11 having an n-type conductivity type and formed of a GaN-based compound semiconductor, an active layer 13 formed of a GaN-based compound semiconductor, and a second compound semiconductor layer 12 having a p-type conductivity type and formed of a GaN-based compound semiconductor; (B) a first electrode; and (C) a second electrode 15, wherein a base layer 16 comprising a GaN layer with Si doped therein and having pits is formed between the first compound semiconductor layer 11 and the active layer 13, and the doping concentration of Si of the base layer 16 is 2×10<SP>19</SP>to 1×10<SP>21</SP>/cm<SP>3</SP>. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a semiconductor light emitting element, a method for manufacturing the same, an image display device, and an electronic apparatus.

  Gallium nitride semiconductor light-emitting devices formed by stacking GaN and mixed crystals of GaN and ultraviolet light from infrared by controlling the band gap energy of the active layer based on the composition ratio and film thickness of the active layer (light-emitting layer) Light emission up to can be realized. Light emitting diodes that emit ultraviolet to blue to green light are already on the market and are used in a wide range of applications such as display devices, lighting, inspection devices, and disinfecting devices. A blue-violet laser diode has also been developed and is used as an optical pickup for writing and reading of a large-capacity optical disk.

  Such a GaN-based semiconductor light-emitting device is known from, for example, Japanese Patent Application Laid-Open No. 2006-339550. Here, in the semiconductor element disclosed in Japanese Patent Application Laid-Open No. 2006-339550, at least a first conductive type semiconductor layer and a second conductive type semiconductor layer are laminated on a substrate through a heterojunction by epitaxial growth, and pits generated during epitaxial growth are formed. This is a semiconductor element in which an electrode is provided in contact with the surface of the second conductivity type semiconductor layer having. The pit is, for example, a pit having a starting point in an underlayer provided on the first conductivity type semiconductor layer side in contact with the active layer.

More specifically, the GaN-based semiconductor light-emitting element is formed on the sapphire substrate 1, for example, in order from the bottom.
Gallium nitride buffer layer 2
Si-doped n-type gallium nitride (GaN: Si) layer 3
Si-doped indium gallium nitride (In _0.03 Ga _0.97 N: Si) underlayer 16
Gallium nitride (GaN) layer 17
Indium / gallium nitride active layer 4 ((InGaN / GaN) × 9 layers))
Mg-doped p-type aluminum nitride / gallium (Al _0.1 Ga _0.9 N: Mg) layer 18
Mg-doped p-type gallium nitride (GaN: Mg) layer 5
Mg-doped p-type indium gallium nitride (In _0.15 Ga _0.85 N: Mg) layer 19
Have a laminated structure.

  Then, by embedding the pits with an insulating material or a semiconductor material, the inflow of current to the pits is completely blocked or effectively suppressed, and the semiconductor layer is destroyed due to the current concentration in the pits or the pits. The generated reverse leakage current is prevented, and a semiconductor device with high reliability and a long lifetime can be realized. Further, by growing the n-type indium gallium nitride (InGaN: Si) underlayer 16 having an indium molar composition ratio of about 3% to 100 nm, the overall voltage characteristics are improved.

JP 2006-339550 A

  By the way, when forming the above-mentioned laminated structure based on the metal organic chemical vapor deposition method (MOCVD method), it usually takes several hours although it depends on the MOCVD apparatus or the like. In addition, since triethylgallium (TEG) gas is used as a Ga source when forming the base layer 16 and the active layer 4, about 20% of the time required for forming the laminated structure is about the formation of the base layer 16. Is spent on. If trimethylgallium (TMG) gas is used as the Ga source, the time spent for forming the underlayer 16 may be shortened, but the controllability of the TMG gas is not so good, and the uniform underlayer 16 is used. There is a problem that it is difficult to form, and there is a problem that undesired large pits are formed in the InGaN layer. If undesirably large pits are formed in the InGaN layer, the effective area of the base layer where the active layer is to be formed is reduced, the growth of the active layer becomes uneven, and the active layer is effectively A problem arises in that the required area is reduced and the luminous efficiency is lowered.

  Accordingly, an object of the present invention is to use a method for manufacturing a semiconductor light-emitting element that enables formation of an underlayer in a relatively short time, a semiconductor light-emitting element obtained by the manufacturing method, and the semiconductor light-emitting element. An object is to provide an image display device and an electronic apparatus.

In order to achieve the above object, the semiconductor light emitting device of the present invention comprises:
(A) An n-type conductivity type first compound semiconductor layer made of a GaN-based compound semiconductor, an active layer made of a GaN-based compound semiconductor, and a p-type conductivity type made of a GaN-based compound semiconductor A laminated structure composed of a second compound semiconductor layer;
(B) a first electrode electrically connected to the first compound semiconductor layer, and
(C) a second electrode electrically connected to the second compound semiconductor layer;
With
A GaN layer doped with Si is provided between the first compound semiconductor layer and the active layer, and an underlayer having pits is provided.
The doping concentration of Si in the underlayer is 2 × 10 ¹⁹ / cm ^{3 to} 1 × 10 ²¹ / cm ³ .

  In order to achieve the above object, an image display device of the present invention includes a semiconductor light emitting element for displaying an image. In addition, an electronic device of the present invention for achieving the above object includes a semiconductor light emitting element. These semiconductor light emitting elements are composed of the above-described semiconductor light emitting element of the present invention.

The method for manufacturing a semiconductor light emitting device of the present invention for achieving the above object is a method for manufacturing the semiconductor light emitting device of the present invention,
A laminated structure is formed based on a metal organic chemical vapor deposition method (MOCVD method),
In the formation of the underlayer, trimethylgallium (TMG) gas is used as a Ga source,
In forming the active layer, triethylgallium (TEG) gas is used as a Ga source.

Semiconductor light-emitting device of the present invention, semiconductor light-emitting device obtained by the method for manufacturing a semiconductor light-emitting device of the present invention, semiconductor light-emitting device constituting the image display device of the present invention, or semiconductor light-emitting device constituting the electronic device of the present invention (Hereinafter, these are collectively referred to as “semiconductor light emitting device of the present invention”), which is composed of a GaN layer doped with Si between the first compound semiconductor layer and the active layer, and pits are formed. An underlying layer is provided. Here, the formation (film formation) of the GaN layer constituting the underlayer can be performed more quickly than in the case where the underlayer is constituted of an InGaN layer as in the conventional technique. Therefore, the film formation time can be shortened, and the manufacturing cost of the semiconductor light emitting element can be reduced. Moreover, by defining the doping concentration of Si in the underlayer as 2 × 10 ¹⁹ / cm ^{3 to} 1 × 10 ²¹ / cm ³ , the density of pits in the underlayer can be set to a desired density. As a result, the semiconductor light emitting device The drive voltage can be reduced. In the semiconductor light emitting device of the present invention, a semiconductor light emitting device having a multiple quantum well structure having a number of well layers tends to increase the driving voltage, or moreover than a semiconductor light emitting device that emits blue light. Since the driving voltage of a semiconductor light emitting device that emits green light tends to increase, application to a semiconductor light emitting device having a multiple quantum well structure having nine or more well layers and a semiconductor light emitting device that emits green light Is very suitable.

FIGS. 1A and 1B are a schematic partial cross-sectional view and a conceptual diagram of a semiconductor light emitting element of Example 1. FIG. FIG. 2 is a graph showing the current density dependence of the operating voltage in the semiconductor light emitting device of Example 1 and the semiconductor light emitting device of Comparative Example 2. FIG. 3 is a graph comparing the light outputs of the semiconductor light emitting device of Example 1 and the semiconductor light emitting device of Comparative Example 1. FIG. 4 is a diagram showing an outline of an evaluation method for the semiconductor light emitting device and the like of Example 1. FIG. 5 is a schematic plan view of one light emitting unit in the light emitting diode display device according to the second embodiment. 6A, 6 </ b> B, and 6 </ b> C are arrows AA, BB, and CC, respectively, of one light emitting unit in the light emitting diode display device of Example 2. FIG. It is a typical partial sectional view in alignment with. (A), (B), and (C) of FIG. 7 show arrows DD, EE, and FF of FIG. 5 of one light emitting unit in the light emitting diode display device of Example 2, respectively. It is a typical partial sectional view in alignment with. 8A and 8B are schematic partial end views of a light-emitting diode and the like for explaining a method for manufacturing the light-emitting diode display device of Example 2. FIG. FIGS. 9A and 9B are schematic partial end views of light-emitting diodes and the like for explaining the method for manufacturing the light-emitting diode display device of Example 2, following FIG. 8B. . FIGS. 10A to 10C are schematic partial end views of light emitting diodes and the like for explaining the method of manufacturing the light emitting diode display device of Example 2 following FIG. 9B. . FIGS. 11A and 11B are schematic partial end views of a light-emitting diode and the like for explaining a method for manufacturing the light-emitting diode display device of Example 2 following FIG. 10C. . 12A and 12B are schematic partial end views of a light emitting diode and the like for explaining a method for manufacturing the light emitting diode display device of Example 2, following FIG. 11B. . FIGS. 13A, 13B, and 13C are arrows BB, EE, and F, respectively, for explaining the method of manufacturing the light-emitting diode display device according to the second embodiment. It is a typical partial end view equivalent to being along -F. 14A, 14 </ b> B, and 14 </ b> C are for describing a method of manufacturing the light-emitting diode display device of Example 2 following FIGS. 13A, 13 </ b> B, and 13 </ b> C, respectively. FIG. 6 is a schematic partial end view equivalent to that taken along arrows BB, EE, and FF in FIG. 5. FIGS. 15A, 15B, and 15C illustrate a method for manufacturing the light-emitting diode display device of Example 2 following FIGS. 14A, 14B, and 14C, respectively. FIG. 6 is a schematic partial end view equivalent to that taken along arrows BB, EE, and FF in FIG. 5. FIGS. 16A, 16B, and 16C illustrate a method for manufacturing the light-emitting diode display device of Example 2 following FIGS. 15A, 15B, and 15C, respectively. FIG. 6 is a schematic partial end view equivalent to that taken along arrows BB, EE, and FF in FIG. 5. FIGS. 17A, 17B, and 17C are diagrams for explaining a method of manufacturing the light-emitting diode display device of Example 2 following FIGS. 16A, 16B, and 16C, respectively. FIG. 6 is a schematic partial end view equivalent to that taken along arrows BB, EE, and FF in FIG. 5. FIGS. 18A, 18B, and 18C illustrate a method of manufacturing the light-emitting diode display device of Example 2 following FIGS. 17A, 17B, and 17C, respectively. FIG. 6 is a schematic partial end view equivalent to that taken along arrows BB, EE, and FF in FIG. 5. FIGS. 19A, 19B, and 19C are diagrams for explaining the method of manufacturing the light-emitting diode display device of Example 2 following FIGS. 18A, 18B, and 18C, respectively. FIG. 6 is a schematic partial end view equivalent to that taken along arrows BB, EE, and FF in FIG. 5. 20 (A), (B) and (C) are for describing a method of manufacturing the light emitting diode display device of Example 2 following (A), (B) and (C) of FIG. 19, respectively. FIG. 6 is a schematic partial end view equivalent to that taken along arrows BB, EE, and FF in FIG. 5. FIGS. 21A, 21B, and 21C illustrate a method for manufacturing the light-emitting diode display device of Example 2, following FIGS. 20A, 20B, and 20C, respectively. FIG. 6 is a schematic partial end view equivalent to that taken along arrows BB, EE, and FF in FIG. 5. FIGS. 22A, 22B, and 22C are diagrams for explaining a method of manufacturing the light-emitting diode display device of Example 2, following FIGS. 21A, 21B, and C, respectively. FIG. 6 is a schematic partial end view equivalent to that taken along arrows BB, EE, and FF in FIG. 5. (A), (B), and (C) in FIG. 23 are arrows AA, BB, and CC in FIG. 5 of one light emitting unit in the light emitting diode display device of Example 3, respectively. FIG. 6 is a schematic partial cross-sectional view similar to FIG. (A), (B), and (C) of FIG. 24 show arrows DD, EE, and FF of FIG. 5 of one light emitting unit in the light emitting diode display device of Example 3, respectively. FIG. 6 is a schematic partial cross-sectional view similar to FIG. 25A, 25B, and 25C are arrows BB, EE, and F, respectively, for explaining the method of manufacturing the light-emitting diode display device of Example 3. It is a typical partial end view equivalent to being along -F. 26 (A), (B) and (C) are for explaining a method of manufacturing the light emitting diode display device of Example 3 following FIGS. 25 (A), (B) and (C), respectively. FIG. 6 is a schematic partial end view equivalent to that taken along arrows BB, EE, and FF in FIG. 5. FIGS. 27A, 27B, and 27C are diagrams for explaining a method of manufacturing the light-emitting diode display device of Example 3, following FIGS. 26A, 26B, and C, respectively. FIG. 6 is a schematic partial end view equivalent to that taken along arrows BB, EE, and FF in FIG. 5. FIG. 28 is a schematic plan view of one light emitting unit in a modification of the light emitting diode display device according to the second embodiment. FIGS. 29A and 29B are schematic partial plan views for explaining a method for manufacturing the light-emitting diode display device according to the second embodiment. 30A and 30B are schematic partial plan views for explaining a method for manufacturing the light-emitting diode display device according to the second embodiment.

Hereinafter, the present invention will be described based on examples with reference to the drawings. However, the present invention is not limited to the examples, and various numerical values and materials in the examples are examples. The description will be given in the following order.
1. 1. Description of the semiconductor light-emitting device and manufacturing method thereof, image display device and electronic apparatus of the present invention Example 1 (Semiconductor light-emitting device of the present invention and method for manufacturing the same)
3. Example 2 (Image display device and electronic apparatus of the present invention)
4). Example 3 (another modification of Example 2 and others)

[Description of Semiconductor Light-Emitting Device and Manufacturing Method, Image Display Device, and Electronic Device of the Present Invention]
In the semiconductor light emitting device or the like of the present invention, the pit can be constituted by a hexagonal pyramid-shaped recess surrounded by a {1-101} plane, that is, an S plane. In this case, the top surface of the underlayer is composed of a {0001} plane, that is, a C plane. In this case, 5 × 10 ⁻⁹ m to 5 × 10 ⁻⁷ m can be cited as the length of one side of the hexagonal pyramid-shaped recess.

In the semiconductor light emitting device of the present invention including the above-described preferable configuration, the density of pits is 1 × 10 ³ / cm ^{2 to} 1 × 10 ¹⁰ / cm ² , preferably 1 × 10 ⁷ / cm ^{2 to} 1 × 10 ^9. / Cm ² is desirable. Here, the density of pits can be measured by using an atomic force microscope (AFM) or a scanning electron microscope (SEM) for the underlayer.

The thickness of the GaN layer constituting the underlayer is not limited, but is preferably 1 × 10 ⁻⁷ m or more, preferably 5 × 10 ⁻⁷ m or more. The doping concentration of Si in the underlayer may be uniform or may be changed toward the active layer.

  Specific examples of the semiconductor light emitting device of the present invention include a light emitting diode (LED) and a semiconductor laser.

  The size (for example, chip size) of the semiconductor light emitting element is not particularly limited, but is typically very small, and specifically, for example, 1 mm or less, or, for example, 0.3 mm or less, or, for example, 0.1 mm. Hereinafter, more specifically, the size is 0.03 mm or less. There are a plurality of semiconductor light emitting elements constituting an electronic device or an image display device, and the number, type, and mounting of the semiconductor light emitting devices according to the application and function of the electronic device, the specifications required for the electronic device and the image display device, etc. Arrangement), intervals, etc. are determined.

More specifically, the image display device or the electronic device of the present invention includes:
(A) a plurality of first wires extending in a first direction;
(B) a plurality of second wirings extending in a second direction different from the first direction; and
(C) a plurality of semiconductor light emitting devices in which the first electrode is electrically connected to the first wiring and the second electrode is electrically connected to the second wiring;
It is composed of

  In the image display device of the present invention, each of the plurality of first wirings has a strip shape as a whole and extends in the first direction, and each of the plurality of second wirings has a strip shape as a whole. The first direction extends in a second direction (for example, a direction orthogonal to the first direction). Note that the wiring having a strip shape as a whole may be constituted by a trunk wiring extending in a strip shape and a plurality of branch wirings extending from the trunk wiring.

  On the other hand, in the electronic device of the present invention, the first wiring is composed of a plurality of wirings, and each of the plurality of wirings extends in the first direction as a whole, and the second wiring also includes a plurality of wirings. Each of the plurality of wirings can be configured to extend in a second direction different from the first direction (for example, a direction orthogonal to the first direction) as a whole. . Alternatively, the first wiring is composed of a common wiring (common electrode), the second wiring is composed of a plurality of wirings, and each of the plurality of wirings extends in one direction as a whole. It can be. Alternatively, the first wiring is composed of a plurality of wirings, and each of the plurality of wirings extends in one direction as a whole, and the second wiring is composed of a common wiring (common electrode). It can be. Alternatively, the first wiring can be made of a common wiring (common electrode), and the second wiring can also be made of a common wiring (common electrode). Note that the wiring may be constituted by, for example, a trunk wiring and a plurality of branch wirings extending from the trunk wiring.

As materials constituting the first wiring and the second wiring, gold (Au), silver (Ag), copper (Cu), palladium (Pd), platinum (Pt), chromium (Cr), nickel (Ni), Cobalt (Co), zirconium (Zr), aluminum (Al), tantalum (Ta), niobium (Nb), molybdenum (Mo), tungsten (W), titanium (Ti), iron (Fe), indium (In), Various metals including metals such as zinc (Zn) tin (Sn); alloys (such as MoW) or compounds including these metal elements (such as TiW; nitrides such as TiN and WN; WSi ₂ , MoSi ₂ , TiSi ₂ a silicide such as TaSi _2); thin carbon film such as diamond;; ITO semiconductor such as silicon (Si); conductive particles made of these metals; conductive particles of alloys containing these metals Indium - tin), indium oxide, can be exemplified conductive metal oxides such as zinc oxide, it may also be a laminated structure of layers containing these elements. Moreover, organic materials (conductive polymer) such as poly (3,4-ethylenedioxythiophene) / polystyrene sulfonic acid [PEDOT / PSS] can also be exemplified. The method of forming the first wiring and the second wiring depends on the materials constituting them, but vacuum deposition such as electron beam deposition or hot filament deposition, sputtering, ion plating, laser ablation Various physical vapor deposition methods (PVD method) including: Various chemical vapor deposition methods (CVD method) including MOCVD method; Spin coating method; Screen printing method, inkjet printing method, offset printing method, metal mask printing Various printing methods such as air method, gravure printing method; air doctor coater method, blade coater method, rod coater method, knife coater method, squeeze coater method, reverse roll coater method, transfer roll coater method, gravure coater method, kiss coater method, cast coater Method, spray coater method, slit orifice Various coating methods such as coater method, calendar coater method, dipping method; stamp method; lift-off method; shadow mask method; plating method such as electrolytic plating method, electroless plating method or a combination thereof; lift-off method; sol-gel method; In addition, a combination of any of the spray methods and, if necessary, a patterning technique can be given. In addition, as the PVD method, (a) various vacuum deposition methods such as electron beam heating method, resistance heating method, flash deposition, (b) plasma deposition method, (c) bipolar sputtering method, direct current sputtering method, direct current magnetron sputtering method Various sputtering methods such as high-frequency sputtering method, magnetron sputtering method, ion beam sputtering method, bias sputtering method, (d) DC (direct current) method, RF method, multi-cathode method, activation reaction method, electric field evaporation method, high-frequency method Various ion plating methods such as an ion plating method and a reactive ion plating method can be given. The material constituting the first wiring and the material constituting the second wiring may be the same or different. Further, it is also possible to directly form the patterned first wiring and second wiring by appropriately selecting the formation method.

  Examples of the electronic device include a light emitting diode display device, a backlight using the light emitting diode, a light emitting diode illumination device, and an advertising medium. Electronic devices may be basically any type, including both portable and stationary types. Specific examples include mobile phones, mobile devices, robots, personal computers, In-vehicle equipment, various home appliances, etc. The semiconductor light emitting device of the present invention may be used as the red light emitting diode, the green light emitting diode, and the blue light emitting diode. Depending on circumstances, for example, a red light emitting diode using an AlGaInP-based compound semiconductor may be used.

  The compound semiconductor constituting the first compound semiconductor layer, the active layer, and the second compound semiconductor layer in the present invention is a GaN compound semiconductor (including AlGaN mixed crystal, AlInGaN mixed crystal, and InGaN mixed crystal) as described above. Examples of the n-type impurity added to the first compound semiconductor layer include silicon (Si), selenium (Se), germanium (Ge), tin (Sn), carbon (C), and titanium (Ti). As p-type impurities added to the second compound semiconductor layer, zinc (Zn), magnesium (Mg), beryllium (Be), cadmium (Cd), calcium (Ca), barium (Ba), oxygen (O ). The active layer may be composed of a single compound semiconductor layer, or may have a single quantum well structure [QW structure] or a multiple quantum well structure [MQW structure]. As described above, a metal organic chemical vapor deposition method (MOCVD method, MOVPE method) is employed as a method for forming various compound semiconductor layers including an active layer (film formation method). In order to manufacture a light emitting diode that emits red light, a light emitting diode that emits green light, and a light emitting diode that emits blue light, a compound semiconductor and a composition thereof may be appropriately selected.

Here, as the organic gallium source gas in the formation of the first compound semiconductor layer, trimethylgallium (TMG) gas can be cited, and as the organic gallium source gas in the formation of the active layer and the second compound semiconductor layer, triethylgallium ( TEG) gas. Examples of the nitrogen source gas include ammonia gas and hydrazine gas. Furthermore, in the formation of the first compound semiconductor layer, for example, silicon (Si), Ge, Se, Sn, C, Te, S, O, Pd, Po may be cited as n-type impurities (n-type dopants). it can. On the other hand, in the formation of the second compound semiconductor layer, for example, magnesium (Mg), Zn, Cd, Be, Ca, Ba, C, Hg, or Sr may be added as a p-type impurity (p-type dopant). Further, when aluminum (Al) or indium (In) is contained as a constituent atom of the GaN-based compound semiconductor layer such as the first compound semiconductor layer, the active layer, and the second compound semiconductor layer, trimethylaluminum (TMA) gas is used as the Al source. What is necessary is just to use trimethylindium (TMI) gas as an In source. Furthermore, monosilane gas (SiH ₄ gas) may be used as the Si source, and cyclopentadienyl magnesium gas, methylcyclopentadienyl magnesium, or biscyclopentadienyl magnesium (Cp ₂ Mg) may be used as the Mg source. .

  In order to electrically connect the first electrode to the first compound semiconductor layer, for example, the first electrode may be formed on the first compound semiconductor layer. Similarly, in order to electrically connect the second electrode to the second compound semiconductor layer, for example, the second electrode may be formed on the second compound semiconductor layer. Here, as the second electrode, Au / AuZn, Au / Pt / Ti (/ Au) / AuZn, Au / Pt / TiW (/ Ti) (/ Au) / AuZn, Au / AuPd, Au / Pt / Ti ( / Au) / AuPd, Au / Pt / TiW (/ Ti) (/ Au) / AuPd, Au / Pt / Ti, Au / Pt / TiW (/ Ti), Au / Pt / TiW / Pd / TiW (/ Ti ), Ti / Cu, Pt, Ni, Ag, Ag / Ni, and Ge. As the first electrode, Au / Ni / AuGe, Au / Pt / Ti (/ Au) / Ni / AuGe, AuGe / Pd, Au / Pt / TiW (/ Ti) / Ni / AuGe, Ti, Ti / Al Can be mentioned. It should be noted that the layer before “/” is located at a position electrically separated from the active layer. Alternatively, the first electrode can be made of a transparent conductive material such as ITO, IZO, ZnO: Al, ZnO: B. When a layer made of a transparent conductive material is used as the current diffusion layer, the first electrode may have a structure in which the metal laminated structure mentioned as the second electrode and the current diffusion layer are combined.

GaAs substrate, GaP substrate, AlN substrate, AlP substrate, InN substrate, InP substrate, AlGaInN substrate, AlGaN substrate, AlInN substrate, GaInN substrate, AlGaInP substrate, AlGaP substrate, AlInP substrate, GaInP substrate, ZnS Substrate, sapphire substrate, SiC substrate, alumina substrate, ZnO substrate, LiMgO substrate, LiGaO ₂ substrate, MgAl ₂ O ₄ substrate, Si substrate, Ge substrate, and a base layer and a buffer layer are formed on the surface (main surface) of these substrates Can be mentioned. In order to manufacture a light-emitting diode that emits red light, a light-emitting diode that emits green light, and a light-emitting diode that emits blue light, these substrates may be appropriately selected.

  Example 1 relates to a semiconductor light emitting device of the present invention and a method for manufacturing the semiconductor light emitting device of the present invention. FIG. 1A shows a schematic partial cross-sectional view of the semiconductor light emitting device of the first embodiment (specifically, in the case of the first embodiment, a light emitting diode or LED), and a conceptual diagram of FIG. Shown in (B).

The semiconductor light emitting device (light emitting diode 10) of Example 1 is:
(A) a first compound semiconductor layer 11 having an n-type conductivity and made of a GaN-based compound semiconductor; an active layer 13 made of a GaN-based compound semiconductor; and a GaN-based compound semiconductor having a p-type conductivity. A laminated structure 10B composed of a second compound semiconductor layer 12 comprising:
(B) a first electrode 14 electrically connected to the first compound semiconductor layer 11, and
(C) a second electrode 15 electrically connected to the second compound semiconductor layer 12;
It has.

即ち、Ｓ面で囲まれた六角錐状の凹部から成る。尚、Ｓ面を、便宜上、｛１−１０１｝面と表記する。また、下地層１６の頂面は｛０００１｝面、即ち、Ｃ面から構成されている。そして、六角錐状の凹部の一辺の長さとして、５×１０^-9ｍ乃至５×１０^-7ｍを挙げることができるし、ピット１６Ａの密度として、１×１０³／ｃｍ²乃至１×１０¹⁰／ｃｍ²を挙げることができる。尚、ピット１６Ａは、図１の（Ｂ）にのみ図示した。 A base layer 16 having a pit 16A is provided between the first compound semiconductor layer 11 and the active layer 13 and includes a GaN layer doped with Si. The Si doping concentration in the base layer 16 is 2. X10 ¹⁹ / cm ^{3 to} 1 × 10 ²¹ / cm ³ . The pit 16A is

That is, it consists of a hexagonal pyramid-shaped recess surrounded by the S plane. For convenience, the S plane is denoted as {1-101} plane. Further, the top surface of the underlayer 16 is composed of a {0001} plane, that is, a C plane. The length of one side of the hexagonal pyramid-shaped recess can be 5 × 10 ⁻⁹ m to 5 × 10 ⁻⁷ m, and the density of the pits 16A can be 1 × 10 ³ / cm ^{2 to} 1 ×. 10 ¹⁰ / cm ² can be mentioned. The pit 16A is shown only in FIG.

Specifically, a GaN low-temperature buffer layer 19B having a thickness of 30 nm and a thickness of 1 μm are formed on the C-plane of a light-emitting element manufacturing substrate 19A made of a sapphire substrate (hereinafter sometimes simply referred to as “substrate 19A”). An undoped GaN layer 19C is formed, and the first compound semiconductor layer 11 is formed on the undoped GaN layer 19C. The first compound semiconductor layer 11 is made of a Si-doped GaN (GaN: Si) layer having a thickness of 3 μm. Furthermore, an underlayer 16 made of a GaN: Si layer having a thickness of 0.2 μm is formed on the first compound semiconductor layer 11. Here, the doping concentration of Si is, for example, 2 × 10 ¹⁹ / cm ³ . The density of the pits 16A is about 3 × 10 ⁸ / cm ² , and the size of the pits 16A is 30 nm to 100 nm. An undoped GaN layer 17A having a thickness of 5 nm is formed on the base layer 16, and an active layer 13 having a multiple quantum well structure is formed thereon. Although not specifically shown, the active layer 13 has nine periods (9 layers) of a well layer made of In _0.23 Ga _0.77 N (thickness: 3 nm) and a barrier layer made of GaN (thickness: 15 nm). The emission wavelength is about 520 nm. Furthermore, an undoped GaN layer 17B having a thickness of 10 nm is formed on the active layer 13, and further comprising an Al _0.15 Ga _0.85 N: Mg layer having a thickness of 2.4 nm and a GaN having a thickness of 1.6 nm. A second compound semiconductor layer 12 composed of a superlattice layer (total thickness: 20 nm) and an Mg-doped GaN (GaN: Mg) layer (contact layer) 18 having a thickness of 0.1 μm are sequentially formed. .

  In Example 1, when the semiconductor light emitting element emits blue, green, or red light, the active layer 13 may be made of an InGaN-based compound semiconductor. When red light is emitted, depending on the case, the active layer 13 may be AlGaInP-based. You may comprise from a compound semiconductor. Although the first compound semiconductor layer 11 is electrically connected to the first electrode 14, specifically, as shown in FIG. 10B described later, the first electrode 14 is connected to the first compound semiconductor layer 11. Formed on top. On the other hand, the second electrode 15 is formed on the second compound semiconductor layer 12. Here, the second electrode 15 is specifically composed of an ohmic contact material such as Ag / Ni, and the first electrode 14 is specifically composed of an ohmic contact material such as Ti / Al. ing.

  Hereinafter, a method for manufacturing the semiconductor light emitting device of Example 1 will be described.

[Step-100]
First, sapphire having a C-plane as a main surface is used as the substrate 19A, and after performing substrate cleaning for 10 minutes at a substrate temperature of 1050 ° C. in a carrier gas composed of hydrogen, the substrate temperature is lowered to 500 ° C. Based on the MOCVD method, a mixed gas of nitrogen gas and hydrogen gas is used as a carrier gas, and while supplying ammonia gas as a nitrogen source, trimethylygallium (TMG) gas as a gallium source is supplied at a low temperature. After the GaN low-temperature buffer layer 19B made of GaN having a thickness of 30 nm is grown on the substrate 19A, the supply of TMG gas is interrupted.

[Step-110]
Next, after raising the substrate temperature to 1020 ° C., the supply of TMG gas is started again, so that an undoped GaN layer 19C having a thickness of 1 μm is crystal-grown on the GaN low-temperature buffer layer 19B. By starting supply of monosilane (SiH ₄ ) gas as a raw material, the first compound semiconductor is made of Si-doped GaN (GaN: Si), and has a n-type conductivity type GaN: Si layer having a thickness of 3 μm. The layer 11 is crystal-grown on the undoped GaN layer 19C. The doping concentration is about 5 × 10 ¹⁸ / cm ³ .

[Step-120]
Thereafter, the supply of TMG gas and SiH ₄ gas is interrupted, and the substrate temperature is lowered to 750 ° C. Then, the base layer 16 is formed using trimethylgallium (TMG) gas as a Ga source. That is, the supply of TMG gas and SiH ₄ gas is restarted, and the base layer 16 made of a GaN: Si layer having a thickness of 0.2 μm is formed on the first compound semiconductor layer 11. Pits 16A are formed in the underlayer 16.

[Step-130]
Thereafter, the active layer 13 is formed using triethylgallium (TEG) gas as a Ga source. That is, the supply of TMG gas and SiH ₄ gas is stopped, Triethylgallium (TEG) gas is used as Ga raw material, and Trimethylindium (TMI) gas is used as In raw material, and these gases are supplied by switching valves. Then, the carrier gas is switched to nitrogen gas, the substrate temperature is lowered to 720 ° C., first, a 5 nm-thick undoped GaN layer 17A is first grown, followed by a well layer made of InGaN and GaN An active layer 13 having a multiple quantum well structure composed of barrier layers is formed. The In composition ratio in the well layer is, for example, 0.23, which corresponds to the emission wavelength λ520 nm. The In composition ratio in the well layer may be determined based on a desired emission wavelength.

[Step-140]
After completing the formation of the multi-quantum well structure, an undoped GaN layer 17B having a thickness of 10 nm is continuously grown. Then, trimethylaluminum (TMA) gas is used as an Al source, and biscyclopentadienyl magnesium (Biscyclopentadienyl Magnesium, Cp ₂ Mg) gas supply is started, and it is composed of a superlattice layer (total thickness: 20 nm) made of 2.4 nm thick Al _0.15 Ga _0.85 N: Mg layer and 1.6 nm thick GaN. The second compound semiconductor layer 12 thus formed is formed. The doping concentration is about 5 × 10 ¹⁹ / cm ³ .

[Step-150]
After that, with the interruption of the supply of TEG gas, TMA gas, and Cp ₂ Mg gas, the carrier gas is switched from nitrogen to hydrogen, the substrate temperature is increased to 850 ° C., and the supply of TMG gas and Cp ₂ Mg gas is started. Then, a Mg-doped GaN layer (GaN: Mg) 18 having a thickness of 0.1 μm is grown on the second compound semiconductor layer 12. The doping concentration is about 5 × 10 ¹⁹ / cm ³ . Thereafter, the substrate temperature is lowered at the same time as the supply of TMG gas and Cp ₂ Mg gas is stopped, the supply of ammonia gas is stopped at the substrate temperature of 600 ° C., and the substrate temperature is lowered to room temperature to complete the crystal growth.

Here, regarding the substrate temperature T _MAX after the growth of the active layer 13, when the emission wavelength is λ nm, T _MAX <1350-0.75λ (° C.), preferably T _MAX <1250-0.75λ ( ° C) is satisfied. By adopting such a substrate temperature T _MAX after the growth of the active layer 13, thermal degradation of the active layer 13 can be suppressed as described in JP-A-2002-319702.

[Step-160]
After the crystal growth is completed in this way, annealing is performed at 800 ° C. for 10 minutes in a nitrogen gas atmosphere to activate the p-type impurity (p-type dopant).

[Step-170]
After that, in the same way as the normal LED wafer process and chip forming process, the photolithographic process and the etching process, the second electrode 15 by metal deposition, the first electrode 14 forming process, and then dicing into chips, By performing resin molding and packaging, various light emitting diodes such as a shell type and a surface mount type can be manufactured.

For comparison, a semiconductor light emitting device in which an In _0.03 Ga _0.97 N: Si layer having a thickness of 0.15 μm was formed instead of the base layer 16 was produced as Comparative Example 1. Further, a semiconductor light emitting element in which the formation of the underlayer 16 was omitted was produced as Comparative Example 2.

In the manufacture of the semiconductor light emitting device of Example 1, the film formation rate obtained by converting the time required for [Step-120] into a unit thickness is Rt _E. On the other hand, in the manufacture of the semiconductor light emitting device of Comparative Example 1, the film formation rate obtained by converting the time required for the same step as [Step-120] into a unit thickness is Rt _C. In the manufacture of the semiconductor light emitting device of Example 1 and Comparative Example 1,
Rt _E / Rt _C ≒ 0.8
By forming the underlayer from GaN: Si, the film formation rate of the underlayer could be shortened by about 20%.

  The graph of FIG. 2 shows the current density dependence of the operating voltage in the semiconductor light emitting device of Example 1 and the semiconductor light emitting device of Comparative Example 2. In FIG. 2, the result of the semiconductor light emitting device of Example 1 is indicated by “A”, and the result of the semiconductor light emitting device of Comparative Example 2 is indicated by “B”. In the evaluation of the semiconductor light emitting device, for simplification, the first compound semiconductor layer 11 is exposed and the second electrode 15 is formed on the second compound semiconductor layer 12 based on the lithography technique and the etching technique. And the 1st electrode 14 was formed on the 1st compound semiconductor layer 11, and the needle stand was performed with the prober, and the light radiated | emitted from the light emitting element manufacturing substrate 19A was detected. A schematic diagram is shown in FIG.

By forming the base layer 16 between the first compound semiconductor layer and the active layer, it was possible to achieve a significant reduction in operating voltage. That is, when the active layer 13 is formed on the base layer 16 having the pits 16A, the pits 16A are not completely buried, and the presence of the pits 16A brings about an effect of reducing the operating voltage. Specifically, in the current usage density of a normal light emitting diode of about 20 amperes / cm ² , the comparative example 2 has an operating voltage of about 4 volts, while the working voltage of Example 1 is as low as 3.2 volts. The voltage could be realized. Further, even at a current density of 100 amperes / cm ² , the comparative example 2 has an operating voltage of 4.5 volts, whereas the working voltage of the first embodiment can be lowered to 3.5 volts. It was. Here, the decrease in the driving voltage suppresses heat generation during driving of the semiconductor light emitting element, and brings about an improvement in reliability.

A graph comparing the outputs of the semiconductor light emitting device of Example 1 and the semiconductor light emitting device of Comparative Example 1 is shown in FIG. In FIG. 3, the result of the semiconductor light emitting device of Example 1 is indicated by “x”, and the result of the semiconductor light emitting device of Comparative Example 1 is indicated by “◯”. The emission wavelength is 520 nm at 130 amperes / cm ² . 3 that the semiconductor light emitting device of Example 1 has the same EL efficiency as the semiconductor light emitting device of Comparative Example 1, which is a conventional semiconductor light emitting device.

Table 1 below shows the results of examining the drive voltage depending on the doping concentration of silicon (Si) in the underlayer 16. The pit density was 8.2 × 10 ⁹ / cm ^{2 when} the doping concentration of silicon (Si) was 5 × 10 ¹⁹ / cm ³ . When the doping concentration of silicon (Si) was 2.0 × 10 ¹⁹ / cm ³ or more, a clear decrease in driving voltage was observed.

[Table 1]
Si doping concentration (cm ⁻³ ) Drive voltage (V) Pit density (× 10 ⁹ / cm ² )
1.5 × 10 ¹⁹ 4.8 0.2
2.0 × 10 ¹⁹ 3.6 3
2.5 × 10 ¹⁹ 3.6 4

  Example 2 relates to an image display device and an electronic apparatus of the present invention. The image display apparatus according to the second embodiment includes a semiconductor light emitting element for displaying an image. Further, the electronic device of Example 2 also includes a semiconductor light emitting element. These semiconductor light emitting elements are composed of the semiconductor light emitting elements described in the first embodiment.

The image display apparatus or electronic device of Example 2 is
(A) a plurality of first wires extending in a first direction;
(B) a plurality of second wirings extending in a second direction different from the first direction; and
(C) a plurality of semiconductor light emitting devices in which the first electrode 14 is electrically connected to the first wiring and the second electrode 15 is electrically connected to the second wiring;
It is composed of

  More specifically, the image display device according to the second embodiment includes a light emitting diode display device. Here, one pixel (one pixel) in the light emitting diode display device includes a set (light emitting unit) of the first light emitting diode 110, the second light emitting diode 210, and the third light emitting diode 310. Each of the first light emitting diode 110, the second light emitting diode 210, and the third light emitting diode 310 is composed of the semiconductor light emitting element described in the first embodiment. The plurality of light emitting units are arranged in a two-dimensional matrix in the first direction and the second direction orthogonal to the first direction. In each light emitting unit, the first electrode 114 of the first light emitting diode 110, the first electrode 214 of the second light emitting diode 210, and the first electrode 314 of the third light emitting diode 310 are connected to the first connecting portion (hereinafter referred to as “sub-common”). It may be referred to as an electrode 43 ”). On the other hand, the extraction electrode 116 provided on the first light emitting diode 110 in each light emitting unit arranged along the second direction has a second wiring (hereinafter referred to as “first common common”) extending along the second direction. Electrode ”or“ first common wiring ”401). Further, the extraction electrode 216 provided in the second light emitting diode 210 is a second wiring extending in the second direction (hereinafter referred to as “second common electrode” or “second common wiring” 402). It is connected to the. Further, the extraction electrode 316 provided in the third light emitting diode 310 is referred to as a second wiring (hereinafter referred to as “third common electrode” or “third common wiring” 403) extending along the second direction. )It is connected to the. The sub-common electrode 43 in each light emitting unit arranged along the second direction is a first wiring (hereinafter referred to as “fourth common electrode” or “fourth common electrode”) extending along the first direction. Wiring "404).

The desired number of first light emitting diodes constituting the light emitting unit is N ₁ , the desired number of _second light emitting diodes constituting the light emitting unit is N ₂ , and the desired number of third light emitting diodes constituting the light emitting unit is N _3. , N _{1 can} include an integer of 1 or 2 or more, N ₂ can include an integer of 1 or 2 or more, and N ₃ can include an integer of 1 or 2 or more. . The values of N ₁ , N _2, and N ₃ may be the same or different. When the values of N ₁ , N ₂ , and N ₃ are integers of 2 or more, the light emitting diodes may be connected in series or in parallel in one light emitting unit. The combination of the values of (N ₁ , N ₂ , N ₃ ) is not limited, but (1,1,1), (1,2,1), (2,2,2), (2, 4, 2). In Example 2, specifically, the combination of the values of (N ₁ , N ₂ , N ₃ ) was (1, 1, 1). The light-emitting diode display device or electronic device according to the second embodiment includes a desired number of first light-emitting diodes 110 that emit red light, a desired number of second light-emitting diodes 210 that emit green light, and a desired number of blue light-emitting diodes. A plurality of light emitting units each including the number of third light emitting diodes 310 are arranged in a two-dimensional matrix in a first direction and a second direction orthogonal to the first direction.

  A schematic plan view of one light emitting unit is shown in FIG. 5, and is taken along arrows AA, arrow BB, arrow CC, arrow DD, arrow EE, and arrow FF in FIG. 5. The schematic partial sectional views are shown in FIGS. 6A, 6B, and 7A, 7A, 7B, and 7C, respectively. In FIG. 5, one light emitting unit is surrounded by a one-dot chain line, a light emitting diode is indicated by a dotted line, and three second wirings (first common electrode 401, second common electrode 402, third common line) are shown. The edge of the electrode 403) is cross-hatched, and the second connecting portion (the second A connecting portion 124, the second B connecting portion 224, the second C connecting portion 324), the third connecting portion 424, the first wiring (fourth) The edge of the common electrode 404) is indicated by a solid line.

  Here, the first common electrode 401, the second common electrode 402, and the third common electrode 403 are formed on the display device substrate 61, and the sub-common electrode 43 is formed on the display device substrate 61. It is formed in a fixed layer 34 fixed on the top. Further, the first light emitting diode 110, the second light emitting diode 210, and the third light emitting diode 310 in the light emitting unit are fixed to the fixed layer 34, and the fixed layer 34 is surrounded by the second insulating material layer 71. . Here, the second insulating material layer 71 covers the first common electrode 401, the second common electrode 402, and the third common electrode 403 formed on the display device substrate 61.

  In the light emitting diode display device or the electronic apparatus according to the second embodiment, light from the first light emitting diode 110, the second light emitting diode 210, and the third light emitting diode 310 is emitted from the first electrode side. The sub-common electrode 43 has a structure that transmits light. The sub-common electrode 43 can be configured by a metal layer or an alloy layer. Alternatively, the sub-common electrode 43 includes a light transmission electrode 42 and a metal layer 41 extending from the light transmission electrode 42. The first light emitting diode 110, the second light emitting diode 210, and the third light emitting diode 310 in the light emitting unit are connected to the sub-common electrode 43 in a state where the first electrodes 114, 214, and 314 are connected to the sub-common electrode 43. Is placed on top. Specifically, the first electrodes 114, 214, and 314 of the first light emitting diode 110, the second light emitting diode 210, and the third light emitting diode 310 are in contact with the light transmitting electrode 42. More specifically, the light transmission electrode 42 is formed on the first electrodes 114, 214, and 314 and around the first electrodes 114, 214, and 314. On the other hand, the fourth contact hole portion 421 is in contact with the metal layer 41. Specifically, the fourth contact hole portion 421 is formed on the metal layer 41. Here, the light transmission electrode 42 is made of a transparent conductive material such as ITO or IZO. On the other hand, the material constituting the metal layer 41 is, for example, a general metal wiring material such as Au, Cu, or Al.

  For example, the sub-common electrode 43 may be configured by a metal layer or an alloy layer. Specifically, the sub-common electrode 43 may be configured by a mesh electrode or a comb electrode. Alternatively, the sub-common electrode 43 can be composed of, for example, a light transmissive electrode and a metal layer or an alloy layer extending from the light transmissive electrode. What is necessary is just to comprise from transparent conductive materials, such as IZO, and to comprise a light transmissive electrode from a mesh electrode or a comb-shaped electrode. In addition, as long as it has the structure which permeate | transmits light, the mesh-shaped electrode and the comb-shaped electrode itself do not need to have a light transmittance. Examples of the material constituting the metal layer or alloy layer include single metals such as Ti, Cr, Ni, Au, Ag, Cu, Pt, W, Ta, and Al, or alloys thereof, and sub-common electrodes. 43 can also have a multi-layer structure of two or more layers. The first electrodes of the first light emitting diode, the second light emitting diode, and the third light emitting diode are in contact with the light transmitting electrode. Specifically, the light transmitting electrode is disposed on the first electrode or the first electrode. What is necessary is just to form in the periphery of the top and 1st electrode. The fourth contact hole portion is preferably in contact with the metal layer or the alloy layer. Specifically, the fourth contact hole portion may be formed on the metal layer or the alloy layer.

  The extraction electrode 116 provided in the first light emitting diode 110 includes a first contact hole portion 121 formed in the fixed layer 34 and a second connection portion formed over the second insulating material layer 71 from the fixed layer 34. It is connected to the first common electrode 401 via (the second A connection portion 124 and the contact portion 123). The extraction electrode 216 provided in the second light emitting diode 210 includes a second contact hole portion 221 formed in the fixed layer 34 and a second connection portion formed over the second insulating material layer 71 from the fixed layer 34. It is connected to the second common electrode 402 via the (second B connection portion 224 and the contact portion 223). The extraction electrode 316 provided in the third light emitting diode 310 includes a third contact hole portion 321 formed in the fixed layer 34 and a second connection portion formed over the second insulating material layer 71 from the fixed layer 34. It is connected to the third common electrode 403 via (the second C connection portion 324 and the contact portion 323). The first connection portion (sub-common electrode 43) includes a fourth contact hole portion 421 formed in the fixed layer 34 and a third connection portion 424 formed over the second insulating material layer 71 from the fixed layer 34. To the first wiring (fourth common electrode 404) formed on the second insulating material layer 71. In the second embodiment, the first pad portion 122 formed in the fixed layer 34 is provided between the first contact hole portion 121 and the second A connection portion 124. Between the second contact hole part 221 and the second B connection part 224, a second pad part 222 formed in the fixed layer 34 is provided. A third pad portion 322 formed in the fixed layer 34 is provided between the third contact hole portion 321 and the second C connection portion 324. A fourth pad portion 422 formed in the fixed layer 34 is provided between the fourth contact hole portion 421 and the third connection portion 424.

  Examples of the material constituting the extraction electrodes 116, 216, and 316 include the various materials described above that constitute the first wiring and the second wiring. As a method for forming the extraction electrodes 116, 216, and 316, various PVD methods can be exemplified. Moreover, it is also possible to directly form a patterned extraction electrode by appropriately selecting a formation method.

  The first contact hole part 121, the second contact hole part 221, the third contact hole part 321 and the fourth contact hole part 421 are made of a wiring material such as Al, Cu, etc. The pad part 222, the third pad part 322, and the fourth pad part 422 are made of a wiring material such as Al or Cu. Further, the second A connection portion 124, the second B connection portion 224, the second C connection portion 324, and the third connection portion 424 are made of a wiring material such as Al or Cu.

  The first contact hole portion 121, the second contact hole portion 221, the third contact hole portion 321, and the fourth contact hole portion 421 are based on the formation of the opening region in the fixed layer 34 based on the lithography technique and the above-described electrode material. It can be formed by a method similar to the electrode forming method. Further, a method for forming the first pad portion 122 extending from the first contact hole portion 121 on the fixed layer 34, a method for forming the second pad portion 222 extending from the second contact hole portion 221 on the fixed layer 34, and a third contact hole. Specifically, the method for forming the third pad portion 322 extending from the portion 321 on the fixed layer 34 and the method for forming the fourth pad portion 422 extending from the fourth contact hole portion 421 on the fixed layer 34 are also specifically described above. What is necessary is just to select suitably from formation methods, such as. Furthermore, from the fixed layer 34 of the second connection portion (the second A connection portion 124, the contact portion 123, the second B connection portion 224, the contact portion 223, the second C connection portion 324, and the contact portion 323) to the second insulating material layer 71. Specifically, the formation over the second insulating material layer 71 from the fixed layer 34 of the third connection portion 424 may be appropriately selected from the above-described method for forming the common electrode or the like.

  Although the first compound semiconductor layer 11 is electrically connected to the first electrodes 114, 214, and 314, specifically, the first electrodes 114, 214, and 314 are formed on the first compound semiconductor layer 11. Yes. Similarly, the second compound semiconductor layer 12 is electrically connected to the second electrode. Specifically, the second electrode is formed on the second compound semiconductor layer 12. Further, the first common electrode 401, the second common electrode 402, the third common electrode 403, and the fourth common electrode 404 are made of a wiring material such as Al or Cu. The fixed layer 34 has, for example, a two-layer configuration of an insulating material layer 32 and an embedded material layer 33 from the first transfer substrate side. The insulating material layer 32 is made of a polyimide resin, and the embedded material layer 33 is made of an ultraviolet curable resin. The second insulating material layer 71 is made of polyimide resin. As a method of fixing the first light-emitting diode 110, the second light-emitting diode 210, and the third light-emitting diode 310 to the fixing layer 34, a part of the embedded material layer 33 is previously cured and the remaining part is left uncured. Exemplifying a method of embedding the first light emitting diode 110, the second light emitting diode 210, and the third light emitting diode 310 in a portion of the uncured embedded material layer 33 and then curing the portion of the uncured embedded material layer 33. Can do.

  The embedding material layer 33 is a material that can be cured or solidified by irradiation with energy rays such as light (particularly ultraviolet rays), radiation (X-rays, etc.), electron beams, etc., or a material that can be cured or solidified by applying heat or pressure. As long as it is a material that can be cured and solidified based on some method, it may be basically composed of any material, and specifically, an adhesive that constitutes an adhesive layer (second insulating layer). Various materials described in the above can be mentioned.

  Hereinafter, (A) to (C) in FIG. 10, (A) and (B) in FIG. 11, (A) and (B) in FIG. 12, (A), (B) and (C) in FIG. 14 (A), (B), (C), FIG. 15 (A), (B), (C), FIG. 16 (A), (B), (C), FIG. 17 (A) ), (B), (C), FIG. 18 (A), (B), (C), FIG. 19 (A), (B), (C), FIG. 20 (A), (B) , (C), (A), (B), (C) in FIG. 21, (A), (B), (C) in FIG. 22, the light-emitting diode display device or electronic apparatus of Example 2 The manufacturing method will be described. 13 (A), FIG. 14 (A), FIG. 15 (A), FIG. 16 (A), FIG. 17 (A), FIG. 18 (A), and FIG. 19 (A). 20 (A), FIG. 21 (A), and FIG. 22 (A) are schematic partial end views equivalent to those taken along the arrow BB in FIG. 5, and FIG. ), FIG. 14B, FIG. 15B, FIG. 16B, FIG. 17B, FIG. 18B, FIG. 19B, and FIG. 20B. FIGS. 21B and 22B are schematic partial end views equivalent to those taken along the arrow EE in FIG. 5, and are shown in FIGS. 13C and 14C. ), FIG. 15C, FIG. 17C, FIG. 18C, FIG. 19C, FIG. 20C, and FIG. 21C. FIG. 22C is a schematic partial end view equivalent to that taken along the arrow FF in FIG. 5.

[Step-200]
Specifically, first, steps similar to [Step-100] to [Step-160] of the first embodiment are performed. And after forming the 2nd electrode 15 on the 2nd compound semiconductor layer 12 by the lift-off method and a vacuum evaporation method, the 1st compound semiconductor layer 11, the active layer 13, and the 2nd compound semiconductor layer 12 are patterned, A plurality of light emitting element portions 10A separated from each other is obtained (see FIG. 1A). Alternatively, after patterning the first compound semiconductor layer 11, the active layer 13, and the second compound semiconductor layer 12 to obtain a plurality of light emitting element portions 10A separated from each other, on the second compound semiconductor layer 12, The second electrode 15 may be formed by a lift-off method and a vacuum evaporation method.

  Thereafter, an insulating layer 21 having an opening 21A in which the central portion of the top surface of the second electrode 15 of each light emitting element portion 10A is exposed is formed on the entire surface. Specifically, a photosensitive polyimide resin is applied to the entire surface based on a spin coating method. Thereafter, using a mask (not shown), exposure of the photosensitive polyimide resin is performed, and further, development and curing of the photosensitive polyimide resin are performed, whereby the central portion of the top surface of the second electrode 15 of each light emitting element portion 10A. As a result, the insulating layer 21 having the opening 21 </ b> A exposed can be obtained (see FIG. 8A).

In addition, as a material constituting the insulating layer, silicon oxide materials, silicon nitride (SiN _Y ), inorganic insulating materials exemplified by metal oxide high dielectric insulating films, polymethyl methacrylate (PMMA), polyvinylphenol ( Organic insulating materials exemplified by PVP) and polyvinyl alcohol (PVA) can be mentioned, and combinations thereof can also be used. Further, other photosensitive insulating materials (for example, polyamide-based resin) can be used. Silicon oxide-based materials include silicon oxide (SiO _x ), silicon oxynitride (SiON), SOG (spin-on-glass), low dielectric constant SiO _x -based materials (for example, polyaryl ether, cycloperfluorocarbon polymer, and benzocyclobutene). , Cyclic fluororesin, polytetrafluoroethylene, fluorinated aryl ether, fluorinated polyimide, amorphous carbon, and organic SOG). As a method for forming the insulating layer, in addition to the spin coating method, any one of various PVD methods; various CVD methods; various printing methods described above; various coating methods described above; dipping method; casting method; Can be mentioned.

  Next, each light emitting element portion 10A is provided with an extraction electrode 22 patterned over the insulating layer 21 from the top surface of the second electrode 15 exposed at the bottom of the opening 21A (see FIG. 8B). . Specifically, the titanium layer (lower layer) is formed on the insulating layer 21 from the top surface of the second electrode 15 exposed at the bottom of the opening 21A, based on a physical vapor deposition method (PVD method) such as a sputtering method. / After forming the extraction electrode layer composed of the laminated structure of the copper layer (upper layer), the extraction electrode 22 can be obtained by patterning the extraction electrode layer by a known method.

  Thereafter, after forming an adhesive layer (second insulating layer) 23 covering the entire surface, the supporting substrate 24 is bonded using the adhesive layer (second insulating layer) 23. Specifically, first, the adhesive layer 23 from which a part of the extraction electrode 22 is exposed is formed on the extraction electrode 22 (see FIG. 9A). More specifically, the adhesive layer 23 made of an epoxy thermosetting resin is formed on the entire surface based on the spin coat method, and the adhesive layer 23 is dried. By adjusting physical properties such as the viscosity of the adhesive layer 23, optimizing spin coating conditions, etc., the adhesive layer 23 in which a part of the extraction electrode 22 is exposed can be formed on the extraction electrode 22. Thereafter, the support substrate 24 is bonded by the adhesive layer 23 using a hot press apparatus (see FIG. 9B).

  The adhesive constituting the adhesive layer (second insulating layer) 23 exhibits an adhesive function by applying energy rays such as light (particularly ultraviolet rays), radiation (X-rays, etc.), electron beams, heat, pressure, etc. As long as it is a material that exhibits an adhesive function based on some method, such as a material to be used, it may be basically composed of any material. Here, a resin-based adhesive material, particularly a photosensitive adhesive, a thermosetting adhesive, or a thermoplastic adhesive, can be mentioned as a material that can be easily formed and exhibits an adhesive function. Can do. As the photosensitive adhesive, conventionally known ones can be used. Specifically, for example, the exposed portion becomes insoluble due to a photocrosslinking reaction such as polyvinyl cinnamate and polyvinyl azidobenzal, or acrylamide or the like. There can be used a negative type in which the exposed part is hardly soluble by a photopolymerization reaction, a positive type in which a quinonediazide group is easily soluble by generating a carboxylic acid by photolysis, such as an o-quinonediazide novolak resin. Further, conventionally known thermosetting adhesives can be used. Specifically, for example, epoxy resins, phenol resins, urea resins, melamine resins, unsaturated polyester resins, polyurethane resins, polyimide resins, etc. Can be used. Furthermore, a conventionally well-known thing can be used as a thermoplastic adhesive, Specifically, a polyethylene resin, a polystyrene resin, a polyvinyl chloride resin, a polyamide-type resin etc. can be used, for example. For example, when a photosensitive adhesive is used, the photosensitive adhesive can exhibit an adhesive function by irradiating the photosensitive adhesive with light or ultraviolet rays. Moreover, when using a thermosetting adhesive agent, an adhesive function can be exhibited in a thermosetting adhesive agent by heating with a hot press apparatus etc. Furthermore, when a thermoplastic adhesive is used, a portion of the thermoplastic adhesive is selectively heated by irradiation with light or the like to melt the portion, thereby imparting fluidity, and then cooling to The adhesive function can be exerted on the plastic adhesive. Other examples of the material constituting the adhesive layer and the adhesive include, for example, a pressure-sensitive adhesive (for example, made of an acrylic resin) or the like, or a material having an adhesive function only by being formed.

(Step-210)
Thereafter, the first light emitting diode 110, the second light emitting diode 210, and the third light emitting diode 310 are temporarily fixed to the light emitting unit manufacturing substrate 53, and a desired number of first light emitting diodes 110 and a desired number of second light emitting diodes 210 are disposed. And a desired number of third light emitting diodes 310, and the first electrodes 114, 214, and 314 of the first light emitting diode 110, the second light emitting diode 210, and the third light emitting diode 310 are connected to the sub-common electrode 43. Get a light emitting unit.

[Step-210A]
Specifically, the first light emitting diode 110 on the first support substrate is transferred to the fixed layer 34, the second light emitting diode 210 on the second support substrate is transferred to the fixed layer 34, and the third support substrate is transferred. The upper third light emitting diode 310 is transferred to the fixed layer 34. The order of these transfers is essentially arbitrary. For this purpose, a first transfer substrate 31 provided with a fixed layer 34 is prepared. As described above, the fixed layer 34 has a two-layer structure of the insulating material layer 32 and the embedded material layer 33 from the first transfer substrate side. The insulating material layer 32 is made of polyimide resin, and the embedded material layer 33 is made of photosensitive resin. The portion of the embedded material layer 33 in which the first light emitting diode 110, the second light emitting diode 210, and the third light emitting diode 310 are to be embedded is uncured, and the other portion of the embedded material layer 33 is cured.

  In addition to the materials constituting the substrate for manufacturing a light-emitting element described above, glass plates, metal plates, alloy plates, ceramic plates, and plastic plates can be used as the materials constituting the support substrate and various substrates used in various manufacturing processes. Can be mentioned. Examples of methods for bonding and fixing various substrates include a method using an adhesive material, a metal bonding method, a semiconductor bonding method, and a metal / semiconductor bonding method. On the other hand, examples of a method for peeling various substrates and a method for removing a substrate include a laser ablation method, a heating method, and an etching method. Further, examples of the method for separating the semiconductor light emitting element or the light emitting element portion from the support substrate and the like include a laser irradiation method, a dry etching method, a wet etching method, and a dicing method.

[Step-210A- (1)]
First, as described above, the support substrate 24 is bonded to the support substrate 24 so that the extraction electrode 22 is in contact with the support substrate (temporary fixing substrate) (see FIG. 9B). Next, the light emitting element manufacturing substrate 19A is removed from the light emitting diode 10 (110, 210, 310). Thereafter, the first electrode 14 (114, 214, 314) is formed on the exposed first compound semiconductor layer 11. Specifically, the light emitting element manufacturing substrate 19A is interposed at the interface between the light emitting diode 10 (110, 210, 310) (more specifically, the first compound semiconductor layer 11) and the light emitting element manufacturing substrate 19A. Excimer laser is irradiated. Then, as a result of laser ablation, the light emitting element manufacturing substrate 19A can be peeled from the light emitting diode 10 (110, 210, 310) (see FIG. 10A). Thereafter, the first electrode 14 (114, 214, 314) is formed on the first compound semiconductor layer 11 by a lift-off method and a vacuum evaporation method. Thus, the structure shown in FIG. 10B can be obtained. Thereafter, the light emitting diode 10 is separated by etching. Thus, the structure shown in FIG. 10C can be obtained.

[Step-210A- (2)]
Next, the desired light emitting diode 10 (110, 210, 310) is transferred from the support substrate 24 to the relay substrate 25. That is, the light emitting diodes 10 (110, 210, 310) bonded to the support substrate 24 are attached to the relay substrate 25. Specifically, first, as schematically shown in FIG. 29A, the light emitting diodes 10 (110, 210) on the support substrate 24 in which the light emitting diodes 10 are left in an array (two-dimensional matrix). 310) is pressed against the slightly adhesive layer 26 formed on the surface of the relay substrate 25 made of a glass plate (see FIGS. 11A and 11B). In FIGS. 29A and 29B and FIGS. 30A and 30B, a circle with “G” in the center indicates the second light emitting diode 210 that emits green light. In FIG. 30B, a circle with “R” in the center indicates the first light emitting diode 110 that emits red light, and a circle with “B” in the center emits blue light. A third light emitting diode 310 is shown. The slightly adhesive layer 26 is made of, for example, silicone rubber. The relay substrate 25 is held by a positioning device (not shown). The positional relationship between the relay substrate 25 and the support substrate 24 can be adjusted by the operation of the positioning device. Next, for example, excimer laser is irradiated from the back surface side of the support substrate 24 to the light emitting diode 10 (110, 210, 310) to be mounted (see FIG. 12A). As a result, laser ablation occurs, and the light emitting diode 10 (110, 210, 310) irradiated with the excimer laser is peeled off from the support substrate 24. Thereafter, when the contact between the relay substrate 25 and the light emitting diode 10 is released, the light emitting diode 10 peeled off from the support substrate 24 is attached to the slightly adhesive layer 26 (see FIG. 12B). The state of the support substrate 24 is schematically shown in FIG. 29B. In the second direction, there is one light emitting diode for every six light emitting diodes, and also in the first direction. In other words, one light-emitting diode is attached to the slightly adhesive layer 26 for every three light-emitting diodes.

  Then, the light emitting diode 10 (110, 210, 310) is disposed (moved or transferred) on the embedded material layer 33. Specifically, the light emitting diodes 10 (110, 210, 310) are disposed on the embedded material layer 33 of the first transfer substrate 31 from the relay substrate 25 with reference to the alignment mark formed on the first transfer substrate 31. To do. Since the light emitting diode 10 (110, 210, 310) is only weakly adhered to the fine adhesive layer 26, the light emitting diode 10 (110, 210, 310) is relayed in a state of being in contact (pressed) with the embedded material layer 33. When the substrate 25 is moved away from the first transfer substrate 31, the light emitting diodes 10 (110, 210, and 310) are left on the uncured embedded material layer 33. Further, the light emitting diode 10 (110, 210, 310) is fixed (arranged) on the fixed layer 34 by deeply embedding the light emitting diode 10 (110, 210, 310) in the embedded material layer 33 with a roller or the like. Can do. The state of the first transfer substrate 31 is schematically shown in FIG.

  Such a method using the relay substrate 25 is referred to as a step transfer method for convenience. Then, by repeating such a step transfer method a desired number of times, a desired number of light emitting diodes 10 (110, 210, 310) are attached to the fine adhesive layer 26 in a two-dimensional matrix, and the first transfer substrate. 31 is transferred. Specifically, in Example 2, 120 × 90 = 10800 light-emitting diodes 10 (110, 210, 310) are attached to the slightly adhesive layer 26 in a two-dimensional matrix in one step transfer. Then, the image is transferred onto the first transfer substrate 31. This is repeated 4 × 3 times. Furthermore, since each of the light emitting diode 110, the light emitting diode 210, and the light emitting diode 310 is transferred onto the first transfer substrate 31, a total of 4 × 3 × 3 times = 36 times of transfer is performed. Thus, a predetermined number of red light emitting diodes, green light emitting diodes, and blue light emitting diodes can be mounted on the first transfer substrate 31 at a predetermined interval and pitch. The state of the first transfer substrate 31 is schematically shown in FIG. In FIG. 30B, the light emitting unit is surrounded by a dashed line. Finally, by transferring and fixing the light emitting units to the display device substrate 61, a plurality of the light emitting units are arranged in the first direction and the second direction orthogonal to the first direction. A light-emitting diode display device arranged in a dimensional matrix is obtained. At this time, if 480 × 270 = 129600 light-emitting units are transferred to the display device substrate 61 at a time, transfer is performed 16 times. , A light emitting diode display device composed of 1920 × 1080 light emitting units can be obtained.

  Then, the photosensitive resin which comprises the embedding material layer 33 is irradiated with an ultraviolet-ray to the uncured embedding material layer 33 which consists of photosensitive resin in the state by which the light emitting diode 10 (110,210,310) is arrange | positioned. Is cured. Thus, the light emitting diode 10 (110, 210, 310) is fixed to the embedded material layer 33 (see FIGS. 13A, 13B, and 13C). In this state, the first electrode 14 (114, 214, 314) of the light emitting diode 10 (110, 210, 310) is in an exposed state.

[Step-210B]
Next, a desired number of light emitting units (N ₁ = 1 in the second embodiment) of the first light emitting diodes 110 and a desired number (N ₂ = 1 in the _second embodiment) are formed. Of the second light emitting diodes 210 and the desired number (in the second embodiment, N ₃ = 1) of the third light emitting diodes 310, the respective first electrodes 114, 214, The sub-common electrode 43 is formed from 314 over the fixed layer 34 based on the sputtering method and the lift-off method.

  Specifically, first, based on the sputtering method and the lift-off method, the metal layer 41 is formed on the portion of the fixed layer 34 that is located away from the first electrodes 114, 214, and 314 ((( A), (B) and (C)).

  Next, the light transmission electrode 42 is formed on the first electrode 114, 214, 314 from the metal layer 41 and on the fixed layer 34 based on the sputtering method and the lift-off method ((A), ( B) and (C)).

[Step-210C]
Thereafter, the light emitting diode groups 110, 210, and 310 to form the light emitting units are bonded to the light emitting unit manufacturing substrate 53 through the fixing layer 34 and the sub-common electrode 43 and temporarily fixed, and then the first transfer substrate 31 is removed. To do. Specifically, a laser peeling layer 52 made of a resin layer having a laser ablation property such as an epoxy resin or a polyimide resin, and a third insulating layer 51 made of an epoxy resin or the like and functioning also as an adhesive layer are formed. The light emitting unit manufacturing substrate 53 prepared is prepared, and the fixing layer 34 and the sub-common electrode 43 are bonded to the third insulating layer 51 and temporarily fixed (see FIGS. 16A, 16B, and 16C). ). Thereafter, for example, excimer laser is irradiated from the first transfer substrate 31 side. As a result, laser ablation occurs, and the first transfer substrate 31 is peeled off from the insulating material layer 32 (see FIGS. 17A, 17B, and 17C).

[Step-210D]
Next, the first contact hole portion 121 connected to the extraction electrode 116 of the first light emitting diode 110 is formed in the fixed layer 34, and the first pad portion 122 extending from the first contact hole portion 121 on the fixed layer 34 is formed. Form. In addition, a second contact hole portion 221 connected to the extraction electrode 216 of the second light emitting diode 210 is formed in the fixed layer 34, and a second pad portion 222 extending from the second contact hole portion 221 over the fixed layer 34 is formed. Form. Further, a third contact hole portion 321 connected to the extraction electrode 316 of the third light emitting diode 310 is formed in the fixed layer 34, and a third pad portion 322 extending from the third contact hole portion 321 over the fixed layer 34 is formed. Form. In addition, a fourth contact hole portion 421 connected to the sub-common electrode 43 is formed in the fixed layer 34, and a fourth pad portion 422 extending from the fourth contact hole portion 421 on the fixed layer 34 is formed. In this way, a light emitting unit can be obtained. Specifically, the open regions 501, 502, 503, and 504 are provided in the insulating material layer 32 above the extraction electrodes 116, 216, 316 and the metal layer 41 based on a well-known lithography technique and etching technique. Then, a metal material layer is formed on the insulating material layer 32 including the inside of the opening regions 501, 502, 503, and 504 by sputtering, and the metal material layer is patterned based on a known lithography technique and etching technique. Thus, the first contact hole part 121, the first pad part 122, the second contact hole part 221, the second pad part 222, the third contact hole part 321, the third pad part 322, the fourth contact hole part 421, the fourth The pad portion 422 can be obtained (see FIGS. 18A, 18B, and 18C and FIGS. 19A, 19B, and 19C).

[Step-210E]
Next, the light emitting unit composed of the light emitting diode groups 110, 210, and 310 is separated based on the laser irradiation method in the fixed layer 34. In FIGS. 19A, 19B, and 19C, a portion to be irradiated with a laser is indicated by a white arrow.

  In the second embodiment, the arrangement pitch of the first light emitting diodes 110 in the light emitting diode display device or the electronic device is an integral multiple of the manufacturing pitch of the first light emitting diodes 110 on the first support substrate. Alternatively, the arrangement pitch of the second light emitting diodes 210 in the electronic device is an integral multiple of the manufacturing pitch of the second light emitting diodes 210 on the second support substrate, and the arrangement pitch of the third light emitting diodes 310 in the light emitting diode display device or the electronic device. Is an integer multiple of the manufacturing pitch of the third light emitting diodes 310 on the third support substrate. Specifically, the arrangement pitch of the first light emitting diodes 110, 210, and 310 in the light emitting diode display device or electronic device along the second direction is set to the manufacturing pitch of the first light emitting diodes 110, 210, and 310 on the support substrate. The arrangement pitch of the first light emitting diodes 110, 210, and 310 in the light emitting diode display device or electronic device along the first direction is set to 6 times, which is 3 times the manufacturing pitch of the first light emitting diodes 110, 210, and 310 on the support substrate. Doubled.

(Step-220)
Specifically, first, the light emitting units are transferred and fixed from the light emitting unit manufacturing substrate 53 to the display device substrate 61 so that the plurality of light emitting units are orthogonal to the first direction and the first direction. Thus, a light-emitting diode display device or electronic device arranged in a two-dimensional matrix in the second direction is obtained.

  Specifically, the display device substrate on which the second insulating material layer 71 and the first common electrode 401, the second common electrode 402, and the third common electrode 403 extending along the second direction are formed. Prepare 61. Here, the first common electrode 401, the second common electrode 402, and the third common electrode 403 are covered with the second insulating material layer 71. The display device substrate 61 is covered with a fourth insulating layer 62, and a first common electrode 401, a second common electrode 402, and a third common electrode 403 are formed on the fourth insulating layer 62. The fourth insulating layer 62, the first common electrode 401, the second common electrode 402, and the third common electrode 403 are covered with a fifth insulating layer 63 that also functions as an adhesive layer. Furthermore, the second insulating material layer 71 is more specifically formed on the fifth insulating layer 63. The second insulating material layer 71 is not formed on the portion of the display device substrate 61 to which the light emitting unit is to be fixed. Moreover, the part of the 5th insulating layer 63 which should fix a light emitting unit is an unhardened state, and the other part of the 5th insulating layer 63 is a hardening state. The display device substrate 61 having such a configuration and structure can be manufactured by a known method.

[Step-220A]
Specifically, first, the light emitting units are bonded to a second transfer substrate (not shown), and then the light emitting unit manufacturing substrate 53 is removed. More specifically, substantially the same step as [Step-210A- (2)] may be executed. That is, for example, excimer laser is irradiated from the back side of the light emitting unit manufacturing substrate 53. As a result, laser ablation occurs, and the light emitting unit manufacturing substrate 53 is peeled off from the laser peeling layer 52.

[Step-220B]
Next, after the light emitting unit is disposed on the display device substrate 61 so as to be surrounded by the second insulating material layer 71, the second transfer substrate is removed. Specifically, the light emitting unit and the surrounding fixing layer 34 are arranged (moved or transferred) on the exposed fifth insulating layer 63 surrounded by the second insulating material layer 71 ((A) in FIG. 20). , (B), (C)). More specifically, with reference to the alignment mark formed on the second transfer substrate, the light emitting unit and the surrounding fixed layer 34 are exposed from the second transfer substrate 31 surrounded by the second insulating material layer 71. 5 is disposed on the insulating layer 63. Since the light emitting unit and the surrounding fixed layer 34 are only weakly adhered to the slightly adhesive layer (not shown) provided on the second transfer substrate, the light emitting unit and the surrounding fixed layer 34 are attached to the fifth insulating layer. When the second transfer substrate is moved in a direction away from the display device substrate 61 while being in contact with (pressed on) 63, the light emitting unit and the surrounding fixed layer 34 are left on the fifth insulating layer 63. Furthermore, the light emitting unit and the surrounding fixed layer 34 are deeply embedded in the fifth insulating layer 63 with a roller or the like, so that the light emitting unit and the surrounding fixed layer 34 are fixed (arranged) to the fifth insulating layer 63. be able to. After the arrangement of all the light emitting units is completed, the fifth insulating layer 63 is cured.

[Step-220C]
Thereafter, a planarized layer 72 made of an insulating resin is formed on the entire surface by a spin coating method to obtain a smoothed planarized layer 72. Thus, the structure shown in FIGS. 21A, 21B and 21C can be obtained.

[Step-220D]
Next, a second A connecting portion 124 and a contact portion 123 that electrically connect the first pad portion 122 and the first common electrode 401 are formed from the fixed layer 34 to the second insulating material layer 71, A second B connecting portion 224 and a contact portion 223 that electrically connect the second pad portion 222 and the second common electrode 402 are formed from the fixed layer 34 to the second insulating material layer 71, together with the third A second C connecting portion 324 and a contact portion 323 that electrically connect the pad portion 322 and the third common electrode 403 are formed from the fixed layer 34 to the second insulating material layer 71, together with the fourth common electrode. The electrode 404 is formed on the second insulating material layer 71, and further, the third connection portion 424 that electrically connects the fourth pad portion 422 and the fourth common electrode 404 is separated from the fixed layer 34 by the second insulation. Formed on material layer 71 That (in FIG. 22 (A), see (B) and (C)).

  Specifically, an opening region (opening region 512 in the example shown in FIG. 22) is formed in the planarization layer 72, the second insulating material layer 71, and the fifth insulating layer 63 based on the lithography technique and the etching technique. Next, the second A connection portion 124, the contact portion 123, the second B connection portion 224, the contact portion 223, the second C connection portion 324, the contact portion 323, and the third connection portion 424 are formed based on the sputtering method, the lithography technique, and the etching method. To do. Thus, the structures shown in FIGS. 6A, 6B, and 6C, and FIGS. 7A, 7B, and 7C can be obtained.

  In Example 2 or Example 3 described later, the first electrodes 114, 214, and 314 of the first light emitting diode 110, the second light emitting diode 210, and the third light emitting diode 310 are used as the sub-common electrode 43. Since the plurality of connected light emitting units are transferred to the display device substrate 61, the second electrode is fixed to the display device substrate 61 with the second electrode facing upward. The second electrodes of the second light emitting diode 210 and the third light emitting diode 310 are routed to the common electrodes (common wiring) 401, 402, 403, and the first wirings of the first electrodes 114, 214, 314 (the fourth wiring) The wiring to the common electrode 404) is facilitated. As a result, the microfabrication process can be reduced, and the manufacturing process of the light-emitting diode display device or the electronic device can be simplified. In addition, since the ratio of the area of the light emitting diodes 110, 210, and 310 occupying one pixel is small, and the light emitting diodes 110, 210, and 310 are arranged close to each other, so-called color breakup hardly occurs.

  The third embodiment is a modification of the second embodiment. 23 (A), (B), (C), and FIG. 24 (A), (B), (C), the light-emitting diode display device or electronic apparatus of Example 3 whose schematic partial cross-sectional views are shown. The structure and structure of the light-emitting diode display device or electronic device obtained by the manufacturing method are substantially the same except that the first pad portion, the second pad portion, the third pad portion, and the fourth pad portion are not formed. Since it is the same as the configuration and structure of the light-emitting diode display device or electronic device of Example 2, detailed description thereof is omitted. 23 (A), (B), (C) and FIG. 24 (A), (B), (C) are respectively indicated by arrows AA, BB, and C in FIG. FIG. 6 is a schematic partial cross-sectional view similar to that taken along −C, arrow DD, arrow EE, and arrow FF.

  Hereinafter, with reference to FIGS. 25A, 25B, and 25C, FIG. 26A, B, and C, and FIGS. 27A, 27B, and 27C. A method for manufacturing the light-emitting diode display device or electronic apparatus according to Example 3 will be described. 25 (A), FIG. 26 (A), and FIG. 27 (A) are schematic partial end views that are equivalent to those taken along arrows BB in FIG. B), FIG. 26B, and FIG. 27B are schematic partial end views that are equivalent to those taken along the arrow EE of FIG. 5. FIG. 25C and FIG. (C) and (C) of FIG. 27 are schematic partial end views equivalent to those taken along the arrow FF in FIG. 5.

[Step-300]
First, the light emitting diode 10 (110, 210, 310) is manufactured by the same method as [Step-200] in the second embodiment. Next, [Step-210A] and [Step-210B] of Example 2 are executed, and further, a light emitting unit is formed through the fixed layer 34 and the sub-common electrode 43 which are [Step-210C] of Example 2. The light emitting diode groups 110, 210, and 310 to be bonded are bonded to the light emitting unit manufacturing substrate 53 and temporarily fixed to obtain a light emitting unit, and then the first transfer substrate 31 is removed. Then, the light emitting unit is separated in the fixed layer 34 by performing the same process as [Process-210E] of Example 2.

(Step-310)
On the other hand, similarly to Example 2, the first common electrode 401 and the second common electrode 402 covered with the second insulating material layer 71 and the second insulating material layer 71 extending along the first direction are covered. The display device substrate 61 on which the third common electrode 403 is formed is prepared.

[Step-310A]
Then, in the same manner as in [Step-220A] in Example 2, each light emitting unit is bonded to a second transfer substrate (not shown), and then the light emitting unit manufacturing substrate 53 is removed.

[Step-310B]
Next, in the same manner as in [Step-220B] and [Step-220C] in Example 2, the light emitting unit is arranged on the display device substrate 61 so as to be surrounded by the second insulating material layer 71, and then the second. The transfer substrate is removed (see (A), (B), and (C) of FIG. 25 and (A), (B), and (C) of FIG. 26).

[Step-310C]
Thereafter, in order to electrically connect the extraction electrode 116 of the first light emitting diode 110 and the first common electrode 401, the first contact hole portion 121 is formed in the fixed layer 34, and the first connection portion 124 and The contact portion 123 is formed from the fixed layer 34 over the planarizing layer 72 and the second insulating material layer 71. In addition, in order to electrically connect the extraction electrode 216 of the second light emitting diode 210 and the second common electrode 402, the second contact hole portion 221 is formed in the fixed layer 34, and the second connection portion 224 is formed. The contact portion 223 is formed from the fixed layer 34 over the planarization layer 72 and the second insulating material layer 71. In addition, in order to electrically connect the extraction electrode 316 and the third common electrode 403 of the third light emitting diode 310, a third contact hole portion 321 is formed in the fixed layer 34, and the third connection portion 324 is formed. The contact portion 323 is formed from the fixed layer 34 over the planarization layer 72 and the second insulating material layer 71. At the same time, a fourth common electrode 404 is formed on the second insulating material layer 71, and the fourth contact hole portion 421 is fixed to electrically connect the sub-common electrode 43 and the fourth common electrode 404. The fourth connection portion 424 is formed over the planarization layer 72 and the second insulating material layer 71 from the fixed layer 34.

  Specifically, based on the well-known lithography technique and etching technique, the extraction regions 116, 216, 316, the planarizing layer 72 above the metal layer 41, the second insulating material layer 71, and the insulating material layer 32 have opening regions 521, 522, 523, and 524 are provided. In addition, the first common electrode 401, the second common electrode 402, the third common electrode 403, and the planarization layer 72 above the fourth common electrode 404, the second insulating material layer 71, and the insulating material layer An opening region is provided in 32 (see FIGS. 27A, 27B, and 27C). In FIG. 27A, only the opening region 526 is shown. Then, a metal material layer is formed on the insulating material layer 32 including the inside of the opening regions 521, 522, 523, 524, and 526 by sputtering, and the metal material layer is patterned based on a known lithography technique and etching technique. By doing so, the first contact hole part 121, the second contact hole part 221, the third contact hole part 321, the fourth contact hole part 421, the second A connection part 124, the contact part 123, the second B connection part 224, the contact part 223, the second C connection portion 324, the contact portion 323, and the third connection portion 424 can be obtained ((A), (B), (C) of FIG. 23 and (A), (B) of FIG. (See (C)).

  As mentioned above, although this invention was demonstrated based on the preferable Example, this invention is not limited to these Examples. The semiconductor light-emitting element (light-emitting diode) described in the embodiments, the light-emitting diode display device incorporating the light-emitting diode, and the configuration and structure of the electronic apparatus are examples, and members, materials, and the like constituting these are also examples. Yes, it can be changed as appropriate. The numerical values, materials, configurations, structures, shapes, various substrates, raw materials, processes, etc. given in the examples are merely examples, and if necessary, numerical values, materials, configurations, structures, shapes, substrates, raw materials different from these. A process or the like can be used.

  In the embodiment, the sub-common electrode 43 is composed of the metal layer 41 and the light transmission electrode 42. Alternatively, the sub-common electrode 43 may be composed of only the metal layer or the alloy layer as long as light emission from the light emitting diode is not hindered. Good. In some cases, the first electrodes 114, 214, and 314 may be formed, for example, after [Step-210A- (2)] of Example 2 or in [Step-210B].

  As a light emitting diode constituting the light emitting unit, a fourth light emitting diode, a fifth light emitting diode,... May be further added to the first light emitting diode, the second light emitting diode, the third light emitting diode. Examples of this include, for example, a light-emitting unit with a sub-pixel that emits white light to improve brightness, a light-emitting unit with a sub-pixel that emits complementary colors to expand the color reproduction range, and a color reproduction range. Examples of the light emitting unit include a sub-pixel that emits yellow light for enlargement, and a light emitting unit that includes a sub-pixel that emits yellow light and cyan to increase the color reproduction range. In these cases, the first electrode constituting the fourth light emitting diode, the fifth light emitting diode,... May be connected to the sub-common electrode.

  Image display devices (light-emitting diode display devices) are not only color display flat-type and direct-view type image display devices typified by television receivers and computer terminals, but also image displays that project images onto the human retina. An apparatus or a projection type image display device can also be used. In these image display devices, although not limited, for example, an image can be obtained by time-sharing controlling the light emitting / non-light emitting states of the first light emitting diode, the second light emitting diode, and the third light emitting diode. A field sequential driving method may be employed.

  FIG. 28 shows a schematic plan view of one light emitting unit in a modification of the light emitting diode display device according to the second embodiment. In this modification, the center of the first pad portion 122 (shown by a thin solid line in FIG. 28) covering the first contact hole portion 121 (shown by a dotted line in FIG. 28) is the center of the first contact hole portion 121. And the center of the first pad portion 122 is shifted to the first common wiring 401 side. Further, the center of the second pad portion 222 (shown by a thin solid line in FIG. 28) covering the second contact hole portion 221 (shown by a dotted line in FIG. 28) coincides with the center of the second contact hole portion 221. The center of the second pad portion 222 is shifted to the second common wiring 402 side. Furthermore, the center of the third pad portion 322 (shown by a thin solid line in FIG. 28) covering the third contact hole portion 321 (shown by a dotted line in FIG. 28) coincides with the center of the third contact hole portion 321. However, the center of the third pad portion 322 is shifted to the third common wiring 403 side. If such a configuration is adopted, even when the first connection portion 124, the second connection portion 224, and the third connection portion 324 are formed, the connection portions 124, 224, 324 and the fourth connection portion 424 are not connected. Therefore, it is possible to reliably prevent a short circuit from occurring between the connection portions 124, 224, 324 and the fourth connection portion 424.

  Depending on the structure of the electronic device, the first wiring is constituted by a common wiring (common electrode), and the second wiring is connected to the first wiring or the second wiring as described in the second embodiment. The same structure may be adopted, or the same structure as the first wiring or the second wiring as described in the second embodiment is adopted for the first wiring, and the second wiring is shared. The first wiring may be composed of a common wiring (common electrode), and the second wiring may be composed of a common wiring (common electrode). May be. Note that the common wiring may be in the form of a single sheet or a plurality of sheets or strips depending on the structure of the electronic device. When the semiconductor light emitting element (light emitting diode) is AC driven, the semiconductor light emitting element (light emitting diode) in which the first connection portion is in contact with the first wiring and the second connection portion is in contact with the second wiring, and A semiconductor light emitting element (light emitting diode) in which the second connection portion is in contact with the first wiring and the first connection portion is in contact with the second wiring may be mixed. In the semiconductor light emitting element (light emitting diode) in which the second connection portion is in contact with the first wiring and the first connection portion is in contact with the second wiring, the second contact is in contact with the first wiring. The connection portion may be read as “first connection portion”, and the first connection portion in contact with the second wiring may be read as “second connection portion”.

DESCRIPTION OF SYMBOLS 10 ... Semiconductor light emitting element (light emitting diode), 10A ... Light emitting element part, 10B ... Laminated structure, 11 ... 1st compound semiconductor layer, 12 ... 2nd compound semiconductor layer, 13. ..Active layer, 14 ... first electrode, 15 ... second electrode, 16 ... underlayer, 16A ... pit, 17A, 17B ... undoped GaN layer, 18 ... Mg doped GaN layer (contact layer), 19A... Light emitting element manufacturing substrate (substrate), 19B... GaN low temperature buffer layer, 19C... Undoped GaN layer, 21. , 22, 116, 216, 316,..., Take-out electrode, 23, second insulating layer (adhesive layer), 24, support substrate (temporary fixing substrate), 25, relay substrate, 26,.・ Slight adhesive layer, 31... First transfer substrate, 32. Edge material layer, 33 ... embedding material layer, 34 ... fixed layer, 41 ... metal layer, 42 ... light transmission electrode, 43 ... sub-common electrode, 51 ... third insulating layer , 52... Laser peeling layer, 53... Light emitting unit manufacturing substrate, 501, 502, 503, 504, 512, 521, 522, 523, 524, 526. Substrate 62, fourth insulating layer, 63 fifth insulating layer, 71, 171 second insulating material layer, 72 flattening layer, 110 first light emitting diode, 210 ... second light emitting diode, 310 ... third light emitting diode, 121 ... first contact hole portion, 221 ... second contact hole portion, 321 ... third contact hole portion, 421 ..Fourth contact hole part, 122 1 pad part, 222 ... 2nd pad part, 322 ... 3rd pad part, 422 ... 4th pad part, 123, 223, 323 ... contact part, 124 ... 2nd connection part (2nd A connection part), 224 ... 2nd connection part (2B connection part), 324 ... 2nd connection part (2C connection part), 424 ... 3rd connection part, 401 ... Second wiring (first common electrode, first common wiring), 402... Second wiring (second common electrode, second common wiring), 403. 3 common electrode, 3rd common wiring), 404 ... 1st wiring (4th common electrode, 4th common wiring)

Claims (7)

(A) An n-type conductivity type first compound semiconductor layer made of a GaN-based compound semiconductor, an active layer made of a GaN-based compound semiconductor, and a p-type conductivity type made of a GaN-based compound semiconductor A laminated structure composed of a second compound semiconductor layer;
(B) a first electrode electrically connected to the first compound semiconductor layer, and
(C) a second electrode electrically connected to the second compound semiconductor layer;
With
A GaN layer doped with Si is provided between the first compound semiconductor layer and the active layer, and an underlayer having pits is provided.
A semiconductor light emitting device having a Si doping concentration of 2 × 10 ¹⁹ / cm ^{3 to} 1 × 10 ²¹ / cm ³ in the underlayer.   2. The semiconductor light emitting element according to claim 1, wherein the pit comprises a hexagonal pyramidal recess surrounded by a {1-101} plane. The length of one side of a hexagonal pyramid-shaped recessed part is 5 * 10 <^-9> m thru ^| or 5 * 10 <^-7> m, The semiconductor light-emitting device of Claim 2. ^2. The semiconductor light emitting device according to claim 1, wherein the density of the pits is 1 × 10 ³ / cm ^{2 to} 1 × 10 ¹⁰ / cm ² . An image display device including a semiconductor light emitting element for displaying an image,
The semiconductor light emitting device is
(A) An n-type conductivity type first compound semiconductor layer made of a GaN-based compound semiconductor, an active layer made of a GaN-based compound semiconductor, and a p-type conductivity type made of a GaN-based compound semiconductor A laminated structure composed of a second compound semiconductor layer;
(B) a first electrode electrically connected to the first compound semiconductor layer, and
(C) a second electrode electrically connected to the second compound semiconductor layer;
With
A GaN layer doped with Si is provided between the first compound semiconductor layer and the active layer, and an underlayer having pits is provided.
An image display device in which the Si doping concentration in the underlayer is 2 × 10 ¹⁹ / cm ^{3 to} 1 × 10 ²¹ / cm ³ . An electronic device including a semiconductor light emitting element,
The semiconductor light emitting device is
(A) An n-type conductivity type first compound semiconductor layer made of a GaN-based compound semiconductor, an active layer made of a GaN-based compound semiconductor, and a p-type conductivity type made of a GaN-based compound semiconductor A laminated structure composed of a second compound semiconductor layer;
(B) a first electrode electrically connected to the first compound semiconductor layer, and
(C) a second electrode electrically connected to the second compound semiconductor layer;
With
A GaN layer doped with Si is provided between the first compound semiconductor layer and the active layer, and an underlayer having pits is provided.
An electronic device in which the Si doping concentration in the base layer is 2 × 10 ¹⁹ / cm ^{3 to} 1 × 10 ²¹ / cm ³ . (A) An n-type conductivity type first compound semiconductor layer made of a GaN-based compound semiconductor, an active layer made of a GaN-based compound semiconductor, and a p-type conductivity type made of a GaN-based compound semiconductor A laminated structure composed of a second compound semiconductor layer;
(B) a first electrode electrically connected to the first compound semiconductor layer, and
(C) a second electrode electrically connected to the second compound semiconductor layer;
With
A GaN layer doped with Si is provided between the first compound semiconductor layer and the active layer, and an underlayer having pits is provided.
In the method for manufacturing a semiconductor light emitting device, the doping concentration of Si in the underlayer is 2 × 10 ¹⁹ / cm ^{3 to} 1 × 10 ²¹ / cm ³ ,
A laminated structure is formed based on a metal organic chemical vapor deposition method,
In the formation of the underlayer, trimethylgallium gas is used as a Ga source,
A method of manufacturing a semiconductor light emitting device using triethylgallium gas as a Ga source in forming an active layer.

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