JP2011054233A5 - - Google Patents

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Publication number
JP2011054233A5
JP2011054233A5 JP2009201971A JP2009201971A JP2011054233A5 JP 2011054233 A5 JP2011054233 A5 JP 2011054233A5 JP 2009201971 A JP2009201971 A JP 2009201971A JP 2009201971 A JP2009201971 A JP 2009201971A JP 2011054233 A5 JP2011054233 A5 JP 2011054233A5
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JP
Japan
Prior art keywords
memory cell
wiring
voltage
power supply
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009201971A
Other languages
English (en)
Japanese (ja)
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JP2011054233A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009201971A priority Critical patent/JP2011054233A/ja
Priority claimed from JP2009201971A external-priority patent/JP2011054233A/ja
Priority to US12/873,756 priority patent/US8363448B2/en
Publication of JP2011054233A publication Critical patent/JP2011054233A/ja
Publication of JP2011054233A5 publication Critical patent/JP2011054233A5/ja
Pending legal-status Critical Current

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JP2009201971A 2009-09-01 2009-09-01 半導体記憶装置 Pending JP2011054233A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009201971A JP2011054233A (ja) 2009-09-01 2009-09-01 半導体記憶装置
US12/873,756 US8363448B2 (en) 2009-09-01 2010-09-01 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009201971A JP2011054233A (ja) 2009-09-01 2009-09-01 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2011054233A JP2011054233A (ja) 2011-03-17
JP2011054233A5 true JP2011054233A5 (cg-RX-API-DMAC10.html) 2012-04-26

Family

ID=43624696

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009201971A Pending JP2011054233A (ja) 2009-09-01 2009-09-01 半導体記憶装置

Country Status (2)

Country Link
US (1) US8363448B2 (cg-RX-API-DMAC10.html)
JP (1) JP2011054233A (cg-RX-API-DMAC10.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5404674B2 (ja) * 2011-03-02 2014-02-05 株式会社東芝 不揮発性半導体記憶装置
CN102624229B (zh) * 2012-03-31 2016-05-11 上海华虹宏力半导体制造有限公司 升压电路以及集成电路
US9123412B2 (en) 2013-03-22 2015-09-01 Masahiro Takahashi Resistance change memory
US9070440B2 (en) 2013-08-26 2015-06-30 Masahiro Takahashi Resistance change memory
KR102712691B1 (ko) * 2019-09-16 2024-10-04 에스케이하이닉스 주식회사 메모리 장치
US10930345B1 (en) * 2019-10-22 2021-02-23 Micron Technology, Inc. Voltage profile for reduction of read disturb in memory cells

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007157317A (ja) * 2005-11-30 2007-06-21 Samsung Electronics Co Ltd 相変化メモリ装置及びそれの読み出し方法
JP4427560B2 (ja) 2007-05-21 2010-03-10 株式会社東芝 不揮発性メモリ装置のデータ書き込み方法
KR101415877B1 (ko) * 2008-05-19 2014-07-07 삼성전자 주식회사 저항체를 이용한 비휘발성 메모리 장치
JP2010182353A (ja) * 2009-02-04 2010-08-19 Elpida Memory Inc 半導体記憶装置とその読み出し方法

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