JP2011044606A - エピタキシャルシリコンウェーハの製造方法 - Google Patents

エピタキシャルシリコンウェーハの製造方法 Download PDF

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Publication number
JP2011044606A
JP2011044606A JP2009192451A JP2009192451A JP2011044606A JP 2011044606 A JP2011044606 A JP 2011044606A JP 2009192451 A JP2009192451 A JP 2009192451A JP 2009192451 A JP2009192451 A JP 2009192451A JP 2011044606 A JP2011044606 A JP 2011044606A
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JP
Japan
Prior art keywords
silicon wafer
polishing
mirror
epitaxial
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009192451A
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English (en)
Japanese (ja)
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JP2011044606A5 (cg-RX-API-DMAC7.html
Inventor
Shinichi Ogata
晋一 緒方
Kazunari Takaishi
和成 高石
Hironori Nishimura
弘徳 西村
Shigeru Okuuchi
茂 奥内
Shunsuke Mikuriya
俊介 御厨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
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Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to JP2009192451A priority Critical patent/JP2011044606A/ja
Priority to TW099127773A priority patent/TWI498954B/zh
Priority to KR1020127000974A priority patent/KR101286171B1/ko
Priority to PCT/JP2010/064076 priority patent/WO2011021691A1/ja
Priority to US13/390,764 priority patent/US8728942B2/en
Priority to DE112010003353.6T priority patent/DE112010003353B4/de
Publication of JP2011044606A publication Critical patent/JP2011044606A/ja
Publication of JP2011044606A5 publication Critical patent/JP2011044606A5/ja
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Recrystallisation Techniques (AREA)
JP2009192451A 2009-08-21 2009-08-21 エピタキシャルシリコンウェーハの製造方法 Pending JP2011044606A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2009192451A JP2011044606A (ja) 2009-08-21 2009-08-21 エピタキシャルシリコンウェーハの製造方法
TW099127773A TWI498954B (zh) 2009-08-21 2010-08-19 磊晶矽晶圓的製造方法
KR1020127000974A KR101286171B1 (ko) 2009-08-21 2010-08-20 에피택셜 실리콘 웨이퍼의 제조 방법
PCT/JP2010/064076 WO2011021691A1 (ja) 2009-08-21 2010-08-20 エピタキシャルシリコンウェーハの製造方法
US13/390,764 US8728942B2 (en) 2009-08-21 2010-08-20 Method for producing epitaxial silicon wafer
DE112010003353.6T DE112010003353B4 (de) 2009-08-21 2010-08-20 Verfahren zur Herstellung von epitaktischen Siliziumwafern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009192451A JP2011044606A (ja) 2009-08-21 2009-08-21 エピタキシャルシリコンウェーハの製造方法

Publications (2)

Publication Number Publication Date
JP2011044606A true JP2011044606A (ja) 2011-03-03
JP2011044606A5 JP2011044606A5 (cg-RX-API-DMAC7.html) 2012-03-29

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JP2009192451A Pending JP2011044606A (ja) 2009-08-21 2009-08-21 エピタキシャルシリコンウェーハの製造方法

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JP (1) JP2011044606A (cg-RX-API-DMAC7.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015140270A (ja) * 2014-01-28 2015-08-03 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハ
CN112652526A (zh) * 2020-12-14 2021-04-13 西安奕斯伟硅片技术有限公司 一种硅片抛光方法和硅片
JP7586031B2 (ja) 2021-08-30 2024-11-19 株式会社Sumco エピタキシャルシリコンウェーハの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001007063A (ja) * 1999-06-22 2001-01-12 Mitsubishi Materials Silicon Corp シリコンウェーハの研磨方法及びこの方法により研磨されたシリコンウェーハ
JP2001127016A (ja) * 1999-08-13 2001-05-11 Wacker Siltronic G Fuer Halbleitermaterialien Ag 半導体ウェハ、その製造方法および使用

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001007063A (ja) * 1999-06-22 2001-01-12 Mitsubishi Materials Silicon Corp シリコンウェーハの研磨方法及びこの方法により研磨されたシリコンウェーハ
JP2001127016A (ja) * 1999-08-13 2001-05-11 Wacker Siltronic G Fuer Halbleitermaterialien Ag 半導体ウェハ、その製造方法および使用

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015140270A (ja) * 2014-01-28 2015-08-03 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハ
CN112652526A (zh) * 2020-12-14 2021-04-13 西安奕斯伟硅片技术有限公司 一种硅片抛光方法和硅片
JP7586031B2 (ja) 2021-08-30 2024-11-19 株式会社Sumco エピタキシャルシリコンウェーハの製造方法

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