JP2011040714A - 発光ダイオード - Google Patents
発光ダイオード Download PDFInfo
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- JP2011040714A JP2011040714A JP2010096152A JP2010096152A JP2011040714A JP 2011040714 A JP2011040714 A JP 2011040714A JP 2010096152 A JP2010096152 A JP 2010096152A JP 2010096152 A JP2010096152 A JP 2010096152A JP 2011040714 A JP2011040714 A JP 2011040714A
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- emitting diode
- light emitting
- metal layer
- ceramic substrate
- conductor
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 114
- 239000002184 metal Substances 0.000 claims abstract description 114
- 239000000919 ceramic Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 230000017525 heat dissipation Effects 0.000 claims abstract description 19
- 239000004020 conductor Substances 0.000 claims description 51
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 230000000593 degrading effect Effects 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】発光ダイオード500は、第一表面202及び第一表面202と反対側の第二表面204を有するセラミック基板200と、セラミック基板200の第一表面202にそれぞれ設置された第一導線金属層208a及び第二導線金属層208bと、セラミック基板200の第一表面202に設置され、第一導線金属層208a及び第二導線金属層208bにそれぞれ電気的に接続されている少なくとも一つの発光ダイオードチップ206と、セラミック基板200の第二表面204に設置され、発光ダイオードチップ206と電気的に絶縁されている複数の放熱金属パッド216とを備える。
【選択図】図5
Description
202 第一表面
204 第二表面
206、206a 発光ダイオードチップ
208a 第一導線金属層
208b 第二導線金属層
208c 第三導線金属層
208d 第四導線金属層
208e 第五導線金属層
209 導線
212 パッケージ用接着剤
214a、214b ビアホール
216 放熱金属パッド
222 回路基板
224a、224b、226 接合パッド
228a、228b、228c はんだ
500、500a、500b 発光ダイオード
Claims (14)
- 第一表面及び前記第一表面と反対側の第二表面を有するセラミック基板と、
前記セラミック基板の前記第一表面にそれぞれ設置された第一導線金属層及び第二導線金属層と、
前記セラミック基板の前記第一表面に設置され、前記第一導線金属層及び前記第二導線金属層にそれぞれ電気的に接続されている少なくとも一つの発光ダイオードチップと、
前記セラミック基板の前記第二表面に設置され、前記発光ダイオードチップと電気的に絶縁されている複数の放熱金属パッドとを備えることを特徴とする発光ダイオード。 - 前記セラミック基板の前記第一表面に設置された第三導線金属層を更に備え、
前記発光ダイオードチップは、前記第三導線金属層に設置され、且つ前記第三導線金属層によって前記第一導線金属層と電気的に接続されており、前記発光ダイオードチップと前記第二導線金属層とは電気的に接続されていることを特徴とする請求項1に記載の発光ダイオード。 - 前記発光ダイオードチップと前記第二導線金属層とに電気的に接続されている導線を更に備えることを特徴とする請求項1または2に記載の発光ダイオード。
- 前記第三導線金属層と前記第一導線金属層とに電気的に接続されている導線を更に備えることを特徴とする請求項2に記載の発光ダイオード。
- 前記セラミック基板から離れた前記複数の放熱金属パッドの表面は同じ平面上にあることを特徴とする請求項1に記載の発光ダイオード。
- 前記複数の放熱金属パッドは互いに電気的に絶縁されていることを特徴とする請求項1に記載の発光ダイオード。
- 前記セラミック基板の第二表面に設置された第四導線金属層及び第五導線金属層を更に備え、
前記第一導線金属層と前記第二導線金属層とは前記セラミック基板の複数のビアホールによって、前記第四導線金属層と前記第五導線金属層とにそれぞれ電気的に接続されていることを特徴とする請求項1に記載の発光ダイオード。 - 前記セラミック基板の前記第一表面と前記発光ダイオードチップとを覆うパッケージ用接着剤を更に備えることを特徴とする請求項1に記載の発光ダイオード。
- 前記パッケージ用接着剤は、シリコン、エポキシ樹脂、蛍光接着剤、またはそれらの組み合わせを含むことを特徴とする請求項8に記載の発光ダイオード。
- 前記セラミック基板は、酸化アルミニウム、または窒化アルミニウムを含むことを特徴とする請求項1に記載の発光ダイオード。
- 前記放熱金属パッドは、銀、銅、ニッケル、錫、アルミニウム、またはそれらの組み合わせを含むことを特徴とする請求項1に記載の発光ダイオード。
- 前記第一導線金属層及び前記第二導線金属層は、銀、銅、ニッケル、錫、アルミニウム、またはそれらの組み合わせを含むことを特徴とする請求項1に記載の発光ダイオード。
- 前記複数の放熱金属パッドは、回路基板に設置された複数の接合パッドとそれぞれ電気的に接続されていることを特徴とする請求項1に記載の発光ダイオード。
- 前記複数の放熱金属パッドは、いずれも回路基板に設置された単一の接合パッドと電気的に接続されていることを特徴とする請求項1に記載の発光ダイオード。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW098126500A TWI381564B (zh) | 2009-08-06 | 2009-08-06 | 發光二極體 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2011040714A true JP2011040714A (ja) | 2011-02-24 |
Family
ID=42791077
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010096152A Pending JP2011040714A (ja) | 2009-08-06 | 2010-04-19 | 発光ダイオード |
Country Status (5)
Country | Link |
---|---|
US (2) | US8013358B2 (ja) |
EP (1) | EP2284915A2 (ja) |
JP (1) | JP2011040714A (ja) |
KR (1) | KR20110014944A (ja) |
TW (1) | TWI381564B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101625895B1 (ko) * | 2014-01-22 | 2016-05-31 | 안성룡 | Uv-led 조사장치 |
JP2017130633A (ja) * | 2016-01-22 | 2017-07-27 | 豊田合成株式会社 | 発光装置 |
JP2018046284A (ja) * | 2011-04-20 | 2018-03-22 | パナソニックIpマネジメント株式会社 | 発光装置、液晶表示装置及び照明器具 |
Families Citing this family (11)
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US9780268B2 (en) | 2006-04-04 | 2017-10-03 | Cree, Inc. | Submount based surface mount device (SMD) light emitter components and methods |
TWI381564B (zh) * | 2009-08-06 | 2013-01-01 | Everlight Electronics Co Ltd | 發光二極體 |
JP2013197456A (ja) * | 2012-03-22 | 2013-09-30 | Stanley Electric Co Ltd | Ledアレイ及び車両用灯具 |
US9735198B2 (en) * | 2012-03-30 | 2017-08-15 | Cree, Inc. | Substrate based light emitter devices, components, and related methods |
US10222032B2 (en) | 2012-03-30 | 2019-03-05 | Cree, Inc. | Light emitter components and methods having improved electrical contacts |
US10134961B2 (en) | 2012-03-30 | 2018-11-20 | Cree, Inc. | Submount based surface mount device (SMD) light emitter components and methods |
US10234119B2 (en) * | 2014-03-24 | 2019-03-19 | Cree, Inc. | Multiple voltage light emitter packages, systems, and related methods |
US10024530B2 (en) * | 2014-07-03 | 2018-07-17 | Sansi Led Lighting Inc. | Lighting device and LED luminaire |
CN109314170B (zh) * | 2015-12-02 | 2023-05-09 | 亮锐控股有限公司 | 用于优化的热阻、焊接可靠性和smt加工良率的led金属焊盘配置 |
US10672957B2 (en) | 2017-07-19 | 2020-06-02 | Cree, Inc. | LED apparatuses and methods for high lumen output density |
TW201919261A (zh) * | 2017-11-05 | 2019-05-16 | 新世紀光電股份有限公司 | 發光裝置 |
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KR100419611B1 (ko) | 2001-05-24 | 2004-02-25 | 삼성전기주식회사 | 발광다이오드 및 이를 이용한 발광장치와 그 제조방법 |
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2009
- 2009-08-06 TW TW098126500A patent/TWI381564B/zh not_active IP Right Cessation
- 2009-10-26 US US12/606,051 patent/US8013358B2/en not_active Expired - Fee Related
- 2009-10-28 EP EP09174277A patent/EP2284915A2/en not_active Withdrawn
- 2009-12-28 KR KR1020090132011A patent/KR20110014944A/ko not_active Application Discontinuation
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2010
- 2010-04-19 JP JP2010096152A patent/JP2011040714A/ja active Pending
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2011
- 2011-05-31 US US13/149,704 patent/US8143642B2/en not_active Expired - Fee Related
Patent Citations (10)
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JPH09162341A (ja) * | 1995-12-07 | 1997-06-20 | Kyocera Corp | 半導体素子収納用パッケージ |
JP2006048934A (ja) * | 2004-07-30 | 2006-02-16 | Stanley Electric Co Ltd | 灯具光源用ledランプ |
JP2006324392A (ja) * | 2005-05-18 | 2006-11-30 | Kyocera Corp | 発光素子搭載用基板,発光素子収納用パッケージ,発光装置および照明装置 |
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JP2007095722A (ja) * | 2005-09-27 | 2007-04-12 | Nichia Chem Ind Ltd | 発光装置 |
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USRE47780E1 (en) | 2011-04-20 | 2019-12-24 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting apparatus, backlight unit, liquid crystal display apparatus, and illumination apparatus |
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JP2017130633A (ja) * | 2016-01-22 | 2017-07-27 | 豊田合成株式会社 | 発光装置 |
Also Published As
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EP2284915A2 (en) | 2011-02-16 |
KR20110014944A (ko) | 2011-02-14 |
US20110254028A1 (en) | 2011-10-20 |
US8143642B2 (en) | 2012-03-27 |
US8013358B2 (en) | 2011-09-06 |
US20110031524A1 (en) | 2011-02-10 |
TW201106509A (en) | 2011-02-16 |
TWI381564B (zh) | 2013-01-01 |
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