JP2011014782A - 半導体装置の製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 132
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 162
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 160
- 239000000758 substrate Substances 0.000 claims abstract description 103
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims abstract description 93
- 239000001272 nitrous oxide Substances 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 44
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 36
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- 229910052799 carbon Inorganic materials 0.000 claims description 53
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 claims description 51
- 229910052751 metal Inorganic materials 0.000 claims description 47
- 239000002184 metal Substances 0.000 claims description 47
- 125000006850 spacer group Chemical group 0.000 claims description 44
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- 229910052734 helium Inorganic materials 0.000 claims description 16
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- 239000002243 precursor Substances 0.000 claims description 11
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- 238000007865 diluting Methods 0.000 claims 4
- 238000010030 laminating Methods 0.000 claims 2
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- 238000002513 implantation Methods 0.000 description 19
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 15
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- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 13
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- 239000001257 hydrogen Substances 0.000 description 9
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
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- 229910021529 ammonia Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910004143 HfON Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910005883 NiSi Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- -1 phosphorus (P) Chemical class 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
【解決手段】ステップ1では、半導体基板がモノシラン(SiH4)に暴露される。次に、ステップ2では、残存するモノシラン(SiH4)が排気される。そして、ステップ3では、半導体基板が亜酸化窒素プラズマに晒される。ステップ1〜3を1サイクルとして、必要とされる膜厚が得られるまでこのサイクルを繰り返すことで、所望のシリコン酸化膜が形成される。
【選択図】図1
Description
ここでは、一般的な平行平板型のプラズマCVD装置を用いて、低温度のもとでシリコン酸化(SiO)膜を形成するための製造方法について説明する。図1に示すように、シリコン酸化膜は、3つのステップを1つのサイクルとして、このサイクルを所定回数繰り返すことによって形成される。まず、ステップ1では、半導体基板がモノシラン(SiH4)に暴露される。次に、ステップ2では、残存するモノシラン(SiH4)が排気される。そして、ステップ3では、半導体基板が亜酸化窒素プラズマに晒される。
ここでは、前述したシリコン酸化膜(SiO膜)の形成手法を、MOSトランジスタのオフセットスペーサの形成に適用する場合について説明する。
ここでは、一般的な平行平板型のプラズマCVD装置を用いて、低温度のもとで炭素を添加したシリコン酸化(SiCO)膜を形成するための製造方法について説明する。図26に示すように、炭素を添加したシリコン酸化膜は、3つのステップを1つのサイクルとして、このサイクルを所定回数繰り返すことによって形成される。まず、ステップ1では、半導体基板がトリメチルシラン(Si(CH3)3H、以下、「TMS」と記す。)に暴露される。次に、ステップ2では、残存するトリメチルシラン(TMS)が排気される。そして、ステップ3では、半導体基板が亜酸化窒素プラズマに晒される。
ここでは、前述した炭素を添加したシリコン酸化膜の形成手法を、MOSトランジスタのオフセットスペーサの形成に適用する場合について説明する。
Claims (10)
- 半導体基板の主表面における所定の領域に、所定の誘電率を有する誘電体膜上に所定の仕事関数を有する金属膜を積層させる態様でゲート電極部を形成する工程と、
前記ゲート電極部の側面を覆うように所定のオフセット絶縁膜を形成する工程と、
前記ゲート電極部の側面上に位置する前記オフセット絶縁膜の部分をオフセットスペーサとし、前記オフセットスペーサをマスクとして所定の導電型の不純物を導入することにより、所定の前記領域にエクステンション領域を形成する工程と、
を有し、
前記オフセット絶縁膜を形成する工程は、
前記半導体基板を所定のチャンバー内に配置し、前記チャンバー内にモノシラン(SiH4)を導入して前記半導体基板を前記モノシラン(SiH4)に晒すことにより、前記半導体基板に前記モノシランを吸着させる第1ステップと、
前記チャンバー内に残留する前記モノシラン(SiH4)を排気する第2ステップと、
前記チャンバー内に亜酸化窒素(N2O)を導入し、前記亜酸化窒素をプラズマ化して前記半導体基板を亜酸化窒素プラズマに晒すことにより、前記半導体基板に吸着した前記モノシラン(SiH4)を酸化させる第3ステップと
を1サイクルとして、前記サイクルを繰り返すことにより所定の膜厚のシリコン酸化膜を形成する工程を備えた、半導体装置の製造方法。 - 前記ゲート電極部を形成する工程は、
前記半導体基板の前記主表面における第1領域に、所定の誘電率を有する第1誘電体膜上に所定の仕事関数を有する第1金属膜を積層させる態様で第1ゲート電極部を形成する工程と、
前記半導体基板の前記主表面における第2領域に、所定の誘電率を有する第2誘電体膜上に所定の仕事関数を有する第2金属膜を積層させる態様で第2ゲート電極部を形成する工程と
を含み、
前記オフセット絶縁膜を形成する工程は、
前記第1ゲート電極部の側面および前記第2ゲート電極部の側面を覆うように、第1オフセット絶縁膜を形成する工程と、
前記第1オフセット絶縁膜上に第2オフセット絶縁膜を形成する工程と
を含み、
前記エクステンション領域を形成する工程は、
前記第1電極部の側面上に位置する前記第1オフセット絶縁膜の部分を前記オフセットスペーサとして、前記第1領域に第1導電型の不純物を導入する工程と、
前記第2電極部の側面上に位置する前記第1オフセット絶縁膜の部分および前記第2オフセット絶縁膜の部分を前記オフセットスペーサとして、前記第2領域に第2導電型の不純物を導入する工程と
を含み、
前記第1オフセット絶縁膜として、前記シリコン酸化膜が形成される、請求項1記載の半導体装置の製造方法。 - 前記第2オフセット絶縁膜として、前記シリコン酸化膜が形成される、請求項2記載の半導体装置の製造方法。
- 前記第1ステップでは、前記モノシラン(SiH4)を希釈するキャリアガスとして、ヘリウム(He)、窒素(N2)およびアルゴン(Ar)からなる群から選ばれるいずれかのガスが適用される、請求項1〜3のいずれかに記載の半導体装置の製造方法。
- 前記第3ステップでは、前記亜酸化窒素(N2O)を希釈するキャリアガスとして、ヘリウム(He)、窒素(N2)およびアルゴン(Ar)からなる群から選ばれるいずれかのガスが適用される、請求項1〜4のいずれかに記載の半導体装置の製造方法。
- 半導体基板の主表面における所定の領域に、所定の誘電率を有する誘電体膜上に所定の仕事関数を有する金属膜を積層させる態様でゲート電極部を形成する工程と、
前記ゲート電極部の側面を覆うように所定のオフセット絶縁膜を形成する工程と、
前記ゲート電極部の側面上に位置する前記オフセット絶縁膜の部分をオフセットスペーサとし、前記オフセットスペーサをマスクとして所定の導電型の不純物を導入することにより、所定の前記領域にエクステンション領域を形成する工程と、
を有し、
前記オフセット絶縁膜を形成する工程は、
前記半導体基板を所定のチャンバー内に配置し、前記チャンバー内に炭素の前駆体としてトリメチルシラン(Si(CH3)3H)およびテトラメチルシラン(Si(CH3)4)のいずれかを導入して前記半導体基板を前記前駆体に晒すことにより、前記半導体基板に前記前駆体を吸着させる第1ステップと、
前記チャンバー内に残留する前記前駆体を排気する第2ステップと、
前記チャンバー内に亜酸化窒素(N2O)を導入し、前記亜酸化窒素をプラズマ化して前記半導体基板を亜酸化窒素プラズマに晒すことにより、前記半導体基板に吸着した前記前駆体を酸化させる第3ステップと
を1サイクルとして、前記サイクルを繰り返すことにより所定の膜厚の炭素を添加したシリコン酸化膜を形成する工程を備えた、半導体装置の製造方法。 - 前記ゲート電極部を形成する工程は、
前記半導体基板の前記主表面における第1領域に、所定の誘電率を有する第1誘電体膜上に所定の仕事関数を有する第1金属膜を積層させる態様で第1ゲート電極部を形成する工程と、
前記半導体基板の前記主表面における第2領域に、所定の誘電率を有する第2誘電体膜上に所定の仕事関数を有する第2金属膜を積層させる態様で第2ゲート電極部を形成する工程と
を含み、
前記オフセット絶縁膜を形成する工程は、
前記第1ゲート電極部の側面および前記第2ゲート電極部の側面を覆うように、第1オフセット絶縁膜を形成する工程と、
前記第1オフセット絶縁膜上に第2オフセット絶縁膜を形成する工程と
を含み、
前記エクステンション領域を形成する工程は、
前記第1電極部の側面上に位置する前記第1オフセット絶縁膜の部分を前記オフセットスペーサとして、前記第1領域に第1導電型の不純物を導入する工程と、
前記第2電極部の側面上に位置する前記第1オフセット絶縁膜の部分および前記第2オフセット絶縁膜の部分を前記オフセットスペーサとして、前記第2領域に第2導電型の不純物を導入する工程と
を含み、
前記第1オフセット絶縁膜として、前記炭素を添加したシリコン酸化膜が形成される、請求項6記載の半導体装置の製造方法。 - 前記第2オフセット絶縁膜として、前記炭素を添加したシリコン酸化膜が形成される、請求項7記載の半導体装置の製造方法。
- 前記第1ステップでは、前記前駆体を希釈するキャリアガスとして、ヘリウム(He)、窒素(N2)およびアルゴン(Ar)からなる群から選ばれるいずれかのガスが適用される、請求項6〜8のいずれかに記載の半導体装置の製造方法。
- 前記第3ステップでは、前記亜酸化窒素(N2O)を希釈するキャリアガスとして、ヘリウム(He)、窒素(N2)およびアルゴン(Ar)からなる群から選ばれるいずれかのガスが適用される、請求項6〜9のいずれかに記載の半導体装置の製造方法。
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