JP2010539732A5 - - Google Patents
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- Publication number
- JP2010539732A5 JP2010539732A5 JP2010526010A JP2010526010A JP2010539732A5 JP 2010539732 A5 JP2010539732 A5 JP 2010539732A5 JP 2010526010 A JP2010526010 A JP 2010526010A JP 2010526010 A JP2010526010 A JP 2010526010A JP 2010539732 A5 JP2010539732 A5 JP 2010539732A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride
- iii
- semipolar
- group iii
- nonpolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 24
- 239000000758 substrate Substances 0.000 claims 24
- 150000004767 nitrides Chemical class 0.000 claims 22
- 238000005498 polishing Methods 0.000 claims 4
- 101100129499 Arabidopsis thaliana MAX2 gene Proteins 0.000 claims 3
- 239000013078 crystal Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US97365607P | 2007-09-19 | 2007-09-19 | |
| PCT/US2008/077072 WO2009039408A1 (en) | 2007-09-19 | 2008-09-19 | Method for increasing the area of non-polar and semi-polar nitride substrates |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010539732A JP2010539732A (ja) | 2010-12-16 |
| JP2010539732A5 true JP2010539732A5 (OSRAM) | 2012-11-01 |
Family
ID=40453547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010526010A Pending JP2010539732A (ja) | 2007-09-19 | 2008-09-19 | 無極性および半極性の窒化物基板の面積を増加させる方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8080469B2 (OSRAM) |
| JP (1) | JP2010539732A (OSRAM) |
| KR (1) | KR20100067114A (OSRAM) |
| WO (1) | WO2009039408A1 (OSRAM) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5743127B2 (ja) | 2005-06-01 | 2015-07-01 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 半極性（Ｇａ，Ａｌ，Ｉｎ，Ｂ）Ｎ薄膜、ヘテロ構造およびデバイスの成長と作製のための方法及び装置 |
| JP2010512661A (ja) | 2006-12-11 | 2010-04-22 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 高特性無極性ｉｉｉ族窒化物光デバイスの有機金属化学気相成長法（ｍｏｃｖｄ）による成長 |
| JP2010512660A (ja) * | 2006-12-11 | 2010-04-22 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 無極性および半極性の発光デバイス |
| WO2009039408A1 (en) * | 2007-09-19 | 2009-03-26 | The Regents Of The University Of California | Method for increasing the area of non-polar and semi-polar nitride substrates |
| WO2009066466A1 (ja) * | 2007-11-21 | 2009-05-28 | Mitsubishi Chemical Corporation | 窒化物半導体および窒化物半導体の結晶成長方法ならびに窒化物半導体発光素子 |
| JP5573225B2 (ja) * | 2010-02-26 | 2014-08-20 | 三菱化学株式会社 | 第１３族金属窒化物結晶の製造方法、該製造方法により得られる第１３族金属窒化物結晶および半導体デバイスの製造方法 |
| KR101854419B1 (ko) | 2010-03-04 | 2018-05-03 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | ｃ－방향으로 ＋／－15도 미만의 미스컷들을 갖는 ｍ－면 기판들 위의 준극성 Ⅲ―질화물 광전자 소자들 |
| JP2012136418A (ja) * | 2010-12-01 | 2012-07-19 | Mitsubishi Chemicals Corp | Ｉｉｉ族窒化物半導体基板とその製造方法 |
| JP5830973B2 (ja) * | 2010-12-01 | 2015-12-09 | 三菱化学株式会社 | ＧａＮ自立基板および半導体発光デバイスの製造方法 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999066565A1 (en) * | 1998-06-18 | 1999-12-23 | University Of Florida | Method and apparatus for producing group-iii nitrides |
| JP3592553B2 (ja) * | 1998-10-15 | 2004-11-24 | 株式会社東芝 | 窒化ガリウム系半導体装置 |
| WO2000033388A1 (en) * | 1998-11-24 | 2000-06-08 | Massachusetts Institute Of Technology | METHOD OF PRODUCING DEVICE QUALITY (Al)InGaP ALLOYS ON LATTICE-MISMATCHED SUBSTRATES |
| JP3968968B2 (ja) * | 2000-07-10 | 2007-08-29 | 住友電気工業株式会社 | 単結晶ＧａＮ基板の製造方法 |
| JP3761418B2 (ja) * | 2001-05-10 | 2006-03-29 | Ｈｏｙａ株式会社 | 化合物結晶およびその製造法 |
| US7501023B2 (en) * | 2001-07-06 | 2009-03-10 | Technologies And Devices, International, Inc. | Method and apparatus for fabricating crack-free Group III nitride semiconductor materials |
| US7105865B2 (en) * | 2001-09-19 | 2006-09-12 | Sumitomo Electric Industries, Ltd. | AlxInyGa1−x−yN mixture crystal substrate |
| JP4031628B2 (ja) * | 2001-10-03 | 2008-01-09 | 松下電器産業株式会社 | 半導体多層膜結晶、およびそれを用いた発光素子、ならびに当該半導体多層膜結晶の成長方法 |
| EP1495167A1 (en) * | 2002-04-15 | 2005-01-12 | The Regents Of The University Of California | NON-POLAR (A1,B,In,Ga) QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES |
| CN1894771B (zh) * | 2003-04-15 | 2012-07-04 | 加利福尼亚大学董事会 | 非极性(Al,B,In,Ga)N量子阱 |
| US7118813B2 (en) * | 2003-11-14 | 2006-10-10 | Cree, Inc. | Vicinal gallium nitride substrate for high quality homoepitaxy |
| KR100718188B1 (ko) * | 2004-05-07 | 2007-05-15 | 삼성코닝 주식회사 | 비극성 ａ면 질화물 반도체 단결정 기판 및 이의 제조방법 |
| US7432142B2 (en) * | 2004-05-20 | 2008-10-07 | Cree, Inc. | Methods of fabricating nitride-based transistors having regrown ohmic contact regions |
| CN101138091B (zh) * | 2005-03-10 | 2010-05-19 | 加利福尼亚大学董事会 | 用于生长平坦半极性氮化镓的技术 |
| JP5743127B2 (ja) * | 2005-06-01 | 2015-07-01 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 半極性（Ｇａ，Ａｌ，Ｉｎ，Ｂ）Ｎ薄膜、ヘテロ構造およびデバイスの成長と作製のための方法及び装置 |
| US7342642B2 (en) * | 2005-06-20 | 2008-03-11 | Asml Netherlands B.V. | Pre-aligning a substrate in a lithographic apparatus, device manufacturing method, and device manufactured by the manufacturing method |
| JP5026271B2 (ja) * | 2005-09-05 | 2012-09-12 | パナソニック株式会社 | 六方晶系窒化物単結晶の製造方法、六方晶系窒化物半導体結晶及び六方晶系窒化物単結晶ウエハの製造方法 |
| US7691658B2 (en) * | 2006-01-20 | 2010-04-06 | The Regents Of The University Of California | Method for improved growth of semipolar (Al,In,Ga,B)N |
| US8193079B2 (en) * | 2006-02-10 | 2012-06-05 | The Regents Of The University Of California | Method for conductivity control of (Al,In,Ga,B)N |
| US7727874B2 (en) * | 2007-09-14 | 2010-06-01 | Kyma Technologies, Inc. | Non-polar and semi-polar GaN substrates, devices, and methods for making them |
| WO2009039408A1 (en) * | 2007-09-19 | 2009-03-26 | The Regents Of The University Of California | Method for increasing the area of non-polar and semi-polar nitride substrates |
-
2008
- 2008-09-19 WO PCT/US2008/077072 patent/WO2009039408A1/en not_active Ceased
- 2008-09-19 JP JP2010526010A patent/JP2010539732A/ja active Pending
- 2008-09-19 US US12/234,340 patent/US8080469B2/en active Active
- 2008-09-19 KR KR1020107008223A patent/KR20100067114A/ko not_active Ceased
-
2011
- 2011-12-15 US US13/327,521 patent/US8729671B2/en active Active