CN102479901B - 磊晶用基板及其制作方法 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 100
- 238000000034 method Methods 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000000407 epitaxy Methods 0.000 title abstract description 3
- 239000013078 crystal Substances 0.000 claims abstract description 78
- 239000000126 substance Substances 0.000 claims description 73
- 239000004575 stone Substances 0.000 claims description 63
- 238000005530 etching Methods 0.000 claims description 19
- 238000001039 wet etching Methods 0.000 claims description 14
- 230000006911 nucleation Effects 0.000 claims description 10
- 238000010899 nucleation Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- 230000007547 defect Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012372 quality testing Methods 0.000 description 1
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Abstract
一种磊晶用基板,包含一个顶面,及多个自该顶面向下延伸的晶面,其中,每n个晶面构成一角锥形的凹孔,n是不小于3的正整数,每一凹孔的其中一晶面与顶面的连接线至另一最相邻凹孔的最相邻晶面与顶面的连接线的间距不大于500nm,当使用本发明进行磊晶时,是自所述晶面成核后成长并聚集,而非于有应力残留或缺陷存在的顶面开始成核、成长,而可得到缺陷较少、晶体质量较佳的磊晶层体,进而提升以此磊晶用基板制作出的元件的工作效能。
Description
技术领域
本发明涉及一种基板及其制作方法,特别是涉及一种磊晶用基板及其制作方法。
背景技术
一般用于磊晶(epitaxy)的磊晶用基板是将单晶棒经切片、抛光、化学清洗后得到,而以这样过程制得的磊晶用基板,其表面必然会有应力残留或是缺陷存在,也因此,以这样的磊晶用基板磊晶成长出磊晶层体时,会延续此等缺陷而使得磊晶出的磊晶层体的晶体质量较差,进而影响所制得的元件的工作效能。
参阅图1,为解决上述的问题,图案化磊晶用基板1使其切割、抛光而得的顶面11还包含有多个自该顶面11向下延伸的凹孔12是常用的作法,形成的凹孔12彼此相间隔且周期地排列,而使得磊晶成长元件的磊晶层体时,成核(nuclearation)成长(grain growth)并聚集(coalescence)发生的顶面11面积因凹孔12的存在而减少,进而减少缺陷延续发生的机会,以得到磊晶质量较佳的磊晶层体。
但是上述的磊晶用基板1仍是自切片、抛光而成的顶面11上成核、成长并聚集,所以磊晶出的磊晶层体依旧会延续缺陷而无法进一步地提升磊晶层体的晶体质量,所以上述的磊晶用基板1仍需要加以改进。
发明内容
本发明的目的是在提供一种适于磊晶成长并减少因基板而形成缺陷的磊晶用基板。
此外,本发明的另一目的是在提供一种制作适于磊晶成长并减少因基板而形成缺陷的磊晶用基板的制作方法。
本发明的磊晶用基板包含一顶面,及多个自该顶面向下延伸的晶面。每n个晶面构成一角锥形的凹孔,n是不小于3的正整数,每一凹孔的其中一晶面与顶面的连接边至另一最相邻凹孔的最相邻晶面与顶面的连接边的间距不大于50nm,而使得用该磊晶用基板磊晶时自所述晶面成核后成长并聚集。
优选地,前述磊晶用基板是六方晶体结构,且每三个晶面构成一个正三角锥形的凹孔,每一凹孔的深度是0.3μm~3μm,且任一晶面与顶面的连接线的长度是1μm~5μm。
优选地,前述磊晶用基板的顶面是(0001)面,所述晶面是面族群其中的一个,任一晶面与该顶面的巨观夹角是119°~156°。
优选地,前述磊晶用基板是六方晶体结构,每一凹孔是由三个晶面构成的,且每一晶面与该顶面具有两实质等长且夹成120°的连接边,每一凹孔的深度是0.3μm~3μm,且任一连接边的长度是1μm~5μm。
优选地,前述磊晶用基板的顶面是(0001)面,所述晶面是面族群其中的一个,任一晶面与顶面的巨观夹角是119°~156°。
再者,本发明磊晶用基板的制作方法包含以下四个步骤。
(a)于一单晶结构的基板顶面上以蚀刻选择比较该基板高的材料形成一层具有多个整齐排列的穿孔的遮覆层;(b)经该遮覆层自该基材顶面向下湿蚀刻,而在该基板对应于每一穿孔的位置处形成一个至少由三第一次蚀刻面构成的凹穴;(c)移除该遮覆层,使该基板顶面裸露;及(d)自该基板顶面与所述第一次蚀刻面进行湿蚀刻而沿该基板的结晶构造移除该基板的预定结构,使得该每一凹穴成为一由n个自该基材顶面斜向下延伸的晶面构成的角锥形凹孔,其中,n是不小于3的正整数,制得该磊晶用基板。
优选地,前述磊晶用基板的制作方法的步骤(d)是进行湿蚀刻至所形成的每一凹孔的任一晶面与该顶面的连接处是直线,且两最相邻凹孔彼此最相邻的晶面与该顶面连接处的间距不大于500nm为止。
优选地,前述磊晶用基板的制作方法的基板是六方晶体结构且顶面是(0001)面,同时,该步骤(a)形成的遮覆层的穿孔是正多边形,开口是1μm~5μm,且任两相邻的穿孔的间距是1μm~5μm。
本发明的有益效果在于:当使用本发明磊晶用基板进行磊晶时,是自所述晶面成核后成长并聚集,而可得到缺陷较少、晶体质量较佳的磊晶层体,进而提升以此磊晶用基板制作出的元件的工作效能。
附图说明
图1是一种以往“磊晶用基板”的立体剖视示意图;
图2是本发明磊晶用基板的优选实施例的一立体剖视示意图;
图3是一扫描电子显微镜(SEM)图,说明本发明磊晶用基板的该优选实施例的形式;
图4是一流程图,说明本发明磊晶用基板的优选实施例的制作方法;
图5是一立体剖视示意图,辅助说明图4的制作方法;
图6是一立体剖视示意图,辅助说明图4的制作方法;
图7是一立体放大图,辅助说明图4的制作方法中,经第一次湿蚀刻成的凹穴;
图8是一立体剖视示意图,辅助说明图4的制作方法;
图9是一立体放大图,辅助说明图4的制作方法中,第一次湿蚀刻所成的凹穴经第二次湿蚀刻后所成的凹孔;
图10是一X光绕射图,说明本发明磊晶用基板的该优选实施例其磊晶薄膜以X光绕射技术进行质量检测的数据;
图11是一烛光分布图,说明以现有的磊晶用基板所制作出固态发光元件的烛光分布;
图12是一烛光分布图,说明以本发明磊晶用基板的该优选实施例所制作出固态发光元件的烛光分布。
具体实施方式
下面结合附图及实施例对本发明进行详细说明:
参阅图2、3,本发明磊晶用基板9的一优选实施例,是六方晶体结构的蓝宝石基板,包含一顶面91及多个自该顶面91向下延伸的晶面92,其中,每三晶面92构成一呈正三角锥形且开口为正六角形的凹孔93,每一晶面92与该顶面91具有两实质等长且夹成120°的连接边922。
详细地说,所述晶面92自该顶面91向下延伸,该顶面91是(0001)面,且所述晶面92是面族群其中的一个,其中,k为不小于2且不大于5的正整数,任一晶面92与该顶面91的巨观夹角是119°~156°,每三个晶面92构成该呈正三角锥形的凹孔93,所述凹孔93成周期排列,每一晶面92与该顶面91具有两实质等长且夹成120°的连接边922,且任一连接边922的长度是1μm~5μm,并且,每一凹孔93的深度是0.3μm~3μm,每一凹孔93的其中一晶面92与顶面91的连接边922,至另一最相邻凹孔93的最相邻晶面92与顶面91的连接边922的间距不大于500nm。如此,当用该磊晶用基板9磊晶时,该顶面91可供成核的面积实质为零,成核后成长并聚集均是自所述凹孔93的三晶面92进行,进而减少缺陷延续发生的机会,得到磊晶质量较佳的磊晶层体,进而提升以该磊晶用基板9制作出的元件的工作效能。
参阅图4,上述的磊晶用基板9是依序进行以下四个步骤后制作出来的。
参阅图4、5,首先进行步骤21,于单晶棒经切片、抛光、化学清洗后得到的单晶结构的基板31上,以蚀刻选择比较该基板31高的材料形成一层具有多个整齐排列的穿孔71的遮覆层7。
详细地说,此步骤21是在完成标准清洗流程(standard cleaningprocedure)后移除表面污染层的基板31上,形成一层二氧化硅(SiO2)构成的薄层后,以黄光微影(photolithography)制程形成具有多个规则地整齐交错排列的穿孔71而成该遮覆层7,其中,所述穿孔71的截面形状是正多边形,优选地,所述穿孔71是直径为1μm~5μm的圆柱形,任两相邻的穿孔71的间距是1μm~5μm。
参阅图4、图6,并配合参阅图7,在形成该遮覆层7之后接着进行步骤22,以该遮覆层7当作屏蔽(mask)自该基板31向下湿蚀刻而在该基板31对应于每一穿孔71的位置处形成一个由一连接面941与三第一次蚀刻面942构成的凹穴94。
详细地说,本步骤22是将混合100毫升的98vol%的硫酸与50毫升的85vol%的磷酸的蚀刻剂,保持260℃经该遮覆层7蚀刻该基板31,蚀刻时间是10~20分钟;此蚀刻开始时是自每一裸露出穿孔71的顶面区域向下形成不规则延伸的连接面941,继续,自连接面941朝远离穿孔71中心轴方向蚀刻扩大连接面941的范围,同时朝向底面方向蚀刻形成自连接面941斜向下沿晶体结构的晶面方向延伸的区域而成三平行于晶体结构的晶面方向的第一次蚀刻面942,而形成如图7所绘示概似三角锥形且深度为0.3μm~3μm的凹穴94。
参阅图4、图8,于该磊晶用基板9顶面91形成所述凹穴94后实施步骤23,以氢氟酸(HF)移除该遮覆层7而使该基板31顶面32裸露。
参阅图4、图9,最后实施步骤24,自该基板31的顶面32与所述第一次蚀刻面942进行湿蚀刻而沿该基板31的结晶构造移除该基板31预定结构,使得该每一凹穴94成为由三个自该磊晶用基板9的顶面91斜向下延伸的晶面92构成的正三角锥形的凹孔93,制得该磊晶用基板9。
详细地说,是将混合100毫升的98vol%的硫酸与50毫升的85vol%的磷酸而制作出的蚀刻剂,并保持蚀刻剂温度在260℃,蚀刻剂自该磊晶用基板9的顶面91、每一凹穴94的连接面941与三第一次蚀刻面942朝向底面方向再次湿蚀刻10~20分钟,蚀刻剂沿连接面941与三第一次蚀刻面942的晶体结构断面处蚀刻,而使连接面941被蚀刻成沿晶体结构的晶面方向延伸,之后平行晶体结构的晶面方向蚀刻使连接面941与三第一次蚀刻面942成连续平面,进而成三完全平行该三第一次蚀刻面942方向延伸的晶面92,且该三晶面92构成型态精确的正三角锥形且开口为正三角形的凹孔93,如图9所示,之后,再继续蚀刻以控制该孔洞93的开口扩大成为正六角形,即制得如图2所示的磊晶用基板9。
参阅图10,以相同的磊晶条件,于图2所示的现有的磊晶用基板1和本发明磊晶用基板9磊晶成长氮化镓磊晶层体后,以X光绕射检视(XRD)可知,以本发明磊晶用基板9所磊晶出的磊晶层体不对称面半高宽为274arcsec,远小于用现有的磊晶用基板1所磊晶出的磊晶层体不对称面半高宽为436arcsec,证明用本发明磊晶用基板9磊晶成长的氮化镓磊晶层体的缺陷较少、晶体质量较佳。
参阅图11、12,由Trace-Pro模拟于上述用现有的磊晶用基板1和本发明磊晶用基板9磊晶成长氮化镓磊晶层体制得的固态发光元件的烛光分布结果可知,以本发明磊晶用基板9制得的固态发光元件的最大烛光是每立体角4.75毫瓦(即4.75mW/sr),明显大于以现有的磊晶用基板1制得的固态发光元件的最大烛光每立体角3.75毫瓦,表示以本发明磊晶用基板9所制作出的固态发光元件的工作效能确实优于以现有的磊晶用基板1所制作出的固态发光元件。
另外要说明的是,本发明并非只能应用于磊晶制作固态发光元件,实际上,只要是制作应用磊晶制程且必须获得高质量的磊晶层体的元件结构,例如制作太阳能电池、高速晶体管(HEMTs)等都可以应用本发明,对于熟悉此领域人士而言,可轻易地组合实施,所以不在此一一举例详述;此外,上述本发明虽以六方晶体结构的蓝宝石基板作为实现说明,但是对于其他晶体结构的磊晶用基板,类似地可借由计算、控制遮覆层7的多个穿孔71的排列位置与形式,以及进行第一、二次湿蚀刻的过程,而可以使得以切片、抛光而成的基板的顶面面积实质减少至无法成核成长并聚集,进而减少缺陷延续发生的机会,进而获得最佳磊晶质量的磊晶层体,由于晶体结构种类众多,且对于熟悉本技术领域人士而言,可自本发明而轻易转用实现,所以不在此一一举例详述。
综上所述,本发明磊晶用基板9与现有的磊晶用基板1相比,该顶面91实质可供成核的面积为零,当以本发明磊晶用基板9进行磊晶时,是在所述晶面92上成核成长,所以磊晶出的磊晶层体不会延续该顶面91的缺陷而使磊晶层体的缺陷较少、晶体质量提升,并且经由烛光分布图验证,以本发明磊晶用基板9所制作出的固态发光元件的工作效能确实较佳;另外,借由两段式湿蚀刻制程,先以该遮覆层7的多个穿孔71精确地控制第一次湿蚀刻出的凹穴94形成位置,并控制进行第二次湿蚀刻的时间将凹穴94精确蚀刻成由晶面92构成的凹孔93,进而成型出本发明磊晶用基板9。
Claims (4)
1.一种磊晶用基板,包含:一个顶面;其特征在于:所述磊晶用基板还包含多个自所述顶面向下延伸的晶面,其中,所述磊晶用基板是六方晶体结构,每三个晶面构成一个正三角锥形的凹孔,且每一晶面与所述顶面具有两等长且夹成120°的连接边,且各凹孔的开口为正六角形,每一凹孔的其中一晶面与顶面的两连接边中的其中一连接边至另一最相邻凹孔的最相邻晶面与顶面的两连接边中的最相邻连接边的间距不大于500nm,且所述顶面是(0001)面,所述晶面是面族群其中的一个,任一晶面与顶面的巨观夹角是119°~156°,而使得用所述磊晶用基板磊晶时自所述晶面成核后成长并聚集。
2.根据权利要求1所述的磊晶用基板,其特征在于:每一凹孔的深度是0.3μm~3μm,且任一连接边的长度是1μm~5μm。
3.一种磊晶用基板的制作方法,其特征在于:所述磊晶用基板的制作方法包含以下步骤:(a)于一单晶结构的基板顶面上以蚀刻选择比较所述基板高的材料形成一层具有多个整齐排列的穿孔的遮覆层,所述基板是六方晶体结构,所述遮覆层的穿孔是圆柱形;(b)经所述遮覆层自所述基板顶面向下湿蚀刻,而在所述基板对应于每一穿孔的位置处形成一个由三第一次蚀刻面构成的凹穴;(c)移除所述遮覆层,使所述基板顶面裸露;及(d)自所述基板顶面与所述第一次蚀刻面进行湿蚀刻而沿所述基板的结晶构造移除所述基板的预定结构,使得所述每一凹穴成为一由三个自所述基材顶面斜向下延伸的晶面构成的正三角锥形的凹孔,其中,每一晶面与所述顶面具有两等长且夹成120°的连接边,且各凹孔的开口为正六角形,及其中,所述步骤(d)是进行湿蚀刻至所形成的每一凹孔的任一晶面与所述顶面的连接处的两连接边是直线,且两最相邻两凹孔彼此最相邻的两晶面与所述顶面的各两连接边中的最相邻两连接边的间距不大于500nm为止,且所述基板的顶面是(0001)面,所述晶面是面族群其中的一个,任一晶面与顶面的巨观夹角是119°~156°,制得所述磊晶用基板。
4.根据权利要求3所述的磊晶用基板的制作方法,其特征在于:所述步骤(a)形成的遮覆层的穿孔的开口是1μm~5μm,且任两相邻的穿孔的间距是1μm~5μm。
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