M365362 , 五、新型說明： 【新型所屬之技術領域】 本創作係種圖案化㈣石基板結構，旨在· 一種可應用於發光元件之該窨石#妬，·并切^ " 卞1貞石丞板，並提高後續元件製 乍於血實石基板上的良率，以有效提升發光元件的發光效 率〇 -【先前技術】 • 由於發光二極體與傳統燈泡比較具有絕對的優勢，例 如體積小、壽命長、低電壓/電流驅動、不易破裂、發光時 無顯著之熱問題、不含水銀（沒有污染問題）、發光^率佳 (省電）等特性，且近幾年來發光二極體的發級率不斷 提升，因此發光二極體在某些領域已漸漸取代曰光燈與白 2燈泡，例如需要高速反應的掃描器燈源、液晶顯示器的 背光源或前光源汽車的儀表板照明、交通號誌燈以及一般 的照明裝置等。 • 而且，由於含氮之ΠΙ —V族化合物為一寬頻帶能隙之 材料，其發光波長可以從紫外光一直含蓋至紅光，可說是 幾乎含蓋整個可見光的波段。因此，利用含氮化鎵的化合 •物半導體’如氮化鎵(GaN)、氮化鋁鎵（GaAIN)、氮化銦鎵 -(GaInN)等的發光二極體元件已廣泛地應用在各種發光模 組中。 第七圖係為習知發光二極體結構的剖面示意圖。如第 七圖所示，發光二極體結構100主要是由基板110、第一 M365362 半導體層120、電極122、發光層130、第二半導體層140、 歐姆接觸層150以及電極142所構成。其中，第一半導體 層120、發光層130、第二半導體層140、歐姆接觸層150 以及電極'142是依序配置於基板110上，且#光層130僅 覆蓋住部分的第一半導體層120,而電極122即是配置在 未被發光層130所覆蓋的第一半導體層120上。 - 然而，利用藍寶石（sapphire)或者碳化石夕（SiC)為基板直 接蠢晶成長一第一半導體層於該基板之上’因為該基板遙 • 晶成長面係為平面狀，直接於該平面上進行蟲晶時，其錯 位缺陷會延伸至量子井並影響磊晶品質，不僅影響後續元 件製作的良率，更導致發光效率與電子遷移速度降低而無 法獲得發光效率較高之發光二極體。 【新型内容】 有鑑於此，本創作之主要目的提供一種圖案化藍寶石 基板結構，旨在提供一種可應用於發光元件之藍寶石基 φ 板，並提高後續元件製作於藍寶石基板上的良率，以有效 提升發光元件的發光效率。 為達上揭目的，本創作之藍寶石基板上表面設有複數 . 突出表面之三角錐體，該藍寶石基板上表面結晶方向為 (0001)面，且各三角錐體係緊密排列，而各三角錐體可佔 該藍寶石基板上表面面積之7 〇 %以上，使得該上表面所剩 • Μ 餘之（0001)面平面面積較少，而有助於該藍寶石基板之表 面進行後續製程，例如進行磊晶製程，可減少磊晶所產生 之缺陷，並有效提高後續元件製作的良率及提高光萃取率。 M365362 【實施方式】 本創作之特點，可參閱本案圖式及實施例之詳細說明 而獲得清楚地瞭*解。 、 本創作「圖案化藍寶石基板結構改良及發光元件」如 第囷至第一圖所示，5亥藍寶石基板1之上表面11設有複數 突出表面之三角錐體12,該藍寶石基板丨上表面丨丨之結晶方 向為(0001)面’各三角錐體具有三個斜向配置之結晶面 ⑵，分別為結晶方向為（10丁2)之第一結晶面，結晶方向為 (0112)之第一結晶面以及結晶方向為（丁102)之第三結晶 面’且各三角錐體12係緊密排列，而可佔該上表面^面積 之7〇%以上，使得該上表面11所剩餘之平面面積較少，該 剖面線部分亦即該表面！ i所剩餘之(〇〇〇1)面平面面積，約佔 總面積之30%以下。 其中’各三角錐體係藉由至少一次藍寶石基板之濕式 蝕刻所製成，如第四圖所示，先於一藍寶石基板以沉積一 阻擒層21，再經由黃光微影製程將光罩之_轉移至阻擒 上之絲層22上’並使用具緩衝效果之氧化物韻刻^ 移除稞露之阻騎21以形案化，使触播仙形成有 複數圖細，再經由一次濕糊令該圖案形成三角錐體 12，且糟由阻播層所形成圖案211之阻措使該三角錐體❻ 具有平直之了！則22,之後㈣由第二:域式關，使複數 ^直頂面之三角錐體12,形成一個完整三角錐扣，而該渴 式蝕刻之蝕刻劑可以為硫酸及磷酸不同比例之混合液。… 另外，各三肖錐體亦可藉由一次乾式餘刻以;;次渴 M365362 j敍相裝成’如第五圖所示，先於一藍寶石基板^上塗佈 光阻層22，再由黃光製程以圖案化該光阻層22，並經由 :=式_於該藍寶石基板1表面進行_，並移除該光 =層後，於該藍寶石_表面形成複數具有平直之頂面 -角靜體12’ ’再經—次濕式_使複數平直頂面之 一個完整三角錐體12,而該濕式钱刻之飯 d Η彳可以為硫酸及磷酸不同比例之混合液。 餘骑/、1 Ϊ監寶石基板表面所形成複數緊密排列之三角 豆使邊監實石基板平面面積較 程，可減少為晶所產峰夕址防、，L 订秘日日製 率及提高光萃取率缺^亚提高後續元件製作的良 而如第六圖所示，传成士以仏 光元件中，該發光元件t 藍寶石基板應用於發 —圖案化藍寶石基板卜該 數突出表面之三角錐體12; Μ石基板表面11設有複 第一半導體層31，俦讯你兮社^ 各三角錐體12 ; …又、〜實石基板1上，並覆蓋 ^光層32，係設於部分之該第—半導體層3 . 弟-半導體層33，係、設於該 / ’ 導體層31可為„ 4層32上，該第-半 為型半導體層，或㈣二半導體層33則 導體層，該第二半春體岸 體層31可為—P型半 第-電極34，俾讯；去二為—n型半導體層； 體層3i上· 係以未覆蓋有發光層32之第一半導 M365362 第二電極35，係設於該第二半導體層幻上 弟一半導體 一歐姆接觸層36，該歐姆接觸層36係設於 層33與第二電極35之間。 該藍寳石基板表面所形4複數f密排列之三 除了能夠改善第-半導體層31的蟲晶品質外，還可以心 導體層3】與第二半導體層33之間橫向傳遞的光線導 1冰Λ，以使其正向出射發光元件3 ’進而提高發光元件 3的外部量子效率。 …綜上所述，本創作提供發光元件—較佳可行之圖案化 藍實石基板結構^ m提㈣料狀_請；本創 作之技術内容及技術特點已揭示如上，然而熟悉本項技術 之人士仍可能基於本創作之揭示而作各種不背離本案創作 精神之替換及修飾。因此，摘作之賴範圍應不限於實 施例所揭μ，而應包括各财㈣相作之替換及修 錦，並為以下之申請專利範圍所涵蓋。 M365362 L圖式簡單說明】 弟圖係為本創作中黯窨| 4 第二圖係為本創作中之結構立體圖。 ，第三圖係為本創作中反之部分放大立體圖。 第四圖係為本創作中 '反之結構不意圖。 圖 第五圖係為本創作中；成，角錐體之結構示意圖。 V成二角錐體之另一結構示意 - 第六圖係為本創作中發先— • 第七圖係為習知發井_+兀件之結構示意圖。 【主要元件符號說明】 足、〜構的剖面示意圖。 藍寶石基板1 表面11 三角錐體12、12， 結晶面121 頂面122 阻擋層21 • 圖案211 光阻層22 發光元件3 -第—半導體層31 -發光層32 第二半導體層33 第一電k 34 第二電極35 區欠姆接觸層36 8M365362, V. New description: [New technical field] This creation is a patterned (four) stone substrate structure, which is designed to be applied to a luminescent stone. #妒,·切切^ " 卞1贞The stone slab, and improve the yield of the subsequent components on the hematite substrate to effectively improve the luminous efficiency of the illuminating element 【-[Prior Art] • Since the illuminating diode has an absolute advantage over the conventional bulb, for example Small size, long life, low voltage/current drive, not easy to break, no significant heat problems when emitting light, no mercury (no pollution problem), good light emission (power saving), etc. The emission rate of the body is constantly increasing, so the LED has gradually replaced the Xenon lamp and the white 2 bulb in some fields, such as a scanner light source that requires high-speed reaction, a backlight of a liquid crystal display, or a dashboard of a front light source car. Lighting, traffic lights, general lighting, etc. • Moreover, since the nitrogen-containing quinone-V compound is a material with a wide band gap, its illuminating wavelength can be covered from ultraviolet light to red light, which can be said to cover almost the entire visible light band. Therefore, a light-emitting diode element using a gallium nitride-containing compound semiconductor such as gallium nitride (GaN), aluminum gallium nitride (GaAIN), or indium gallium nitride (GaInN) has been widely used in various types. In the lighting module. The seventh figure is a schematic cross-sectional view of a conventional light-emitting diode structure. As shown in Fig. 7, the light emitting diode structure 100 is mainly composed of a substrate 110, a first M365362 semiconductor layer 120, an electrode 122, a light emitting layer 130, a second semiconductor layer 140, an ohmic contact layer 150, and an electrode 142. The first semiconductor layer 120, the light emitting layer 130, the second semiconductor layer 140, the ohmic contact layer 150, and the electrode '142 are sequentially disposed on the substrate 110, and the #光层130 covers only a portion of the first semiconductor layer 120. The electrode 122 is disposed on the first semiconductor layer 120 that is not covered by the light emitting layer 130. - However, sapphire or SiC is used as a substrate to directly grow a first semiconductor layer on the substrate. 'Because the substrate crystal growth plane is planar, directly on the plane When the insect crystal is carried out, the misalignment defect will extend to the quantum well and affect the epitaxial quality, which not only affects the yield of the subsequent component fabrication, but also causes the luminous efficiency and the electron migration velocity to be lowered to obtain the light-emitting diode with higher luminous efficiency. [New content] In view of this, the main purpose of this creation is to provide a patterned sapphire substrate structure, which aims to provide a sapphire-based φ plate which can be applied to a light-emitting element, and to improve the yield of subsequent components on a sapphire substrate, Effectively improve the luminous efficiency of the light-emitting element. In order to achieve the goal, the upper surface of the sapphire substrate of the present invention is provided with a plurality of triangular pyramids protruding from the surface, the surface of the sapphire substrate is crystallized in a (0001) plane, and the triangular pyramid systems are closely arranged, and the triangular pyramids are arranged. It can occupy more than 7 % of the surface area of the sapphire substrate, so that the upper surface of the (0001) plane is less, and the surface of the sapphire substrate is subjected to subsequent processes, such as epitaxy. The process can reduce the defects caused by epitaxy, and effectively improve the yield of subsequent components and improve the light extraction rate. M365362 [Embodiment] The characteristics of this creation can be clearly explained by referring to the detailed description of the drawings and the examples. The present invention "patterned sapphire substrate structure improvement and light-emitting element", as shown in the first to first figures, the upper surface 11 of the 5 sapphire substrate 1 is provided with a triangular pyramid 12 having a plurality of protruding surfaces, and the sapphire substrate has an upper surface The crystal direction of the crucible is (0001) plane. 'The triangular pyramids have three crystal faces (2) arranged obliquely, respectively, the first crystal faces having a crystal orientation of (10 butyl 2), and the crystal orientation is (0112). a crystal face and a third crystal face of the crystal direction (D) 102 and each of the triangular pyramids 12 are closely arranged, and may occupy more than 7% of the area of the upper surface, so that the remaining surface of the upper surface 11 The area is small, and the section of the section line is the surface! The remaining (〇〇〇1) plane area of i is about 30% of the total area. Wherein each of the triangular pyramid systems is formed by wet etching of at least one sapphire substrate, as shown in the fourth figure, before depositing a barrier layer 21 prior to a sapphire substrate, and then passing the mask through the yellow lithography process. Transfer to the silk layer 22 on the barrier layer and make the oxide effect of the cushioning effect of the appliance ^ remove the resisting rider 21 to form the shape, so that the touch-casting fairy has a plurality of fine patterns, and then through a wet paste The pattern is formed into a triangular pyramid 12, and the resistance of the pattern 211 formed by the blocking layer makes the triangular pyramid ❻ straight! Then 22, and then (4) by the second: domain type off, the plurality of triangular pyramids 12 of the top surface form a complete triangular pyramid buckle, and the thirsty etching etchant can be a mixture of different ratios of sulfuric acid and phosphoric acid. . ... In addition, each of the three sloping cones can also be replaced by a dry remnant; the second thirst M365362 j is phased as 'as shown in the fifth figure, the photoresist layer 22 is coated on a sapphire substrate, and then The photoresist layer 22 is patterned by a yellow light process, and the film is subjected to _ on the surface of the sapphire substrate 1 and the light layer is removed, and a plurality of flat top surfaces are formed on the sapphire surface. - Angular body 12' 're-wet type_ a full triangular cone 12 of a plurality of flat top faces, and the wet money engraving meal d Η彳 can be a mixture of different ratios of sulfuric acid and phosphoric acid. Yu Qi/, 1 Ϊ Ϊ 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石 宝石The light extraction rate is insufficient to improve the subsequent components. As shown in the sixth figure, the light-emitting component t is used in the sapphire substrate. The sapphire substrate is applied to the triangle of the surface of the sapphire substrate. Cone 12; the surface of the vermiculite substrate 11 is provided with a complex first semiconductor layer 31, and the triangular pyramids 12 of the 兮 兮 ^ ; ; ; ; ; ; ; 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实a portion of the first-semiconductor layer 3, the semiconductor layer 33, is disposed on the /' conductor layer 31, which may be „4 layers 32, the first-half-type semiconductor layer, or (4) the second semiconductor layer 33 and the conductor The second half of the spring body bank layer 31 may be a -P type half-electrode 34, and the second layer is an n-type semiconductor layer; the body layer 3i is provided with the first half of the light-emitting layer 32 not covered. The second electrode 35 of the M365362 is disposed on the second semiconductor layer, the semiconductor-ohmic contact layer 36, The ohmic contact layer 36 is disposed between the layer 33 and the second electrode 35. The surface of the sapphire substrate is formed by four complex numbers of three, in addition to improving the crystal quality of the first semiconductor layer 31, and also a core conductor. The light transmitted laterally between the layer 3 and the second semiconductor layer 33 guides the hail so that it is emitted toward the light-emitting element 3' in the forward direction to further increase the external quantum efficiency of the light-emitting element 3. In summary, the present invention provides illumination. Component - preferably feasible patterned blue stone substrate structure ^ m mention (four) material form _ please; the technical content and technical characteristics of this creation have been disclosed above, but those familiar with the technology may still be based on the disclosure of this creation The following is not to be construed as a substitute for the spirit of the creation of the case. Therefore, the scope of the abstract should not be limited to the examples disclosed in the example, but should include the replacement and repair of each of the financial (4) and is covered by the following patent application scope. M365362 L simple description of the picture] The younger picture is the middle of the creation | 4 The second picture is the three-dimensional structure of the structure in the creation. The third picture is the enlarged part of the opposite part of the creation. The fourth picture is In the creation, 'the reverse structure is not intended. The fifth picture is the creation; the structure of the pyramid; the other structure of the V-corner cone - the sixth picture is the first in this creation - • The seven diagrams are schematic diagrams of the structure of the well-known well _+ 兀. [Main component symbol description] Schematic diagram of the foot and the structure. Sapphire substrate 1 Surface 11 Triangular pyramid 12, 12, crystal plane 121 Top surface 122 Barrier layer 21 • Pattern 211 Photoresist layer 22 Light-emitting element 3 - First semiconductor layer 31 - Light-emitting layer 32 Second semiconductor layer 33 First electric k 34 Second electrode 35 Area under-contact layer 36 8