JP2010529942A - リボン結晶引き上げ炉のための取り外し可能熱制御 - Google Patents
リボン結晶引き上げ炉のための取り外し可能熱制御 Download PDFInfo
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- JP2010529942A JP2010529942A JP2010512375A JP2010512375A JP2010529942A JP 2010529942 A JP2010529942 A JP 2010529942A JP 2010512375 A JP2010512375 A JP 2010512375A JP 2010512375 A JP2010512375 A JP 2010512375A JP 2010529942 A JP2010529942 A JP 2010529942A
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- insulator
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- crucible
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/007—Pulling on a substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
- Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Abstract
Description
本特許出願は2007年6月14日に出願された米国仮特許出願第60/944,017号(名称「THERMAL CONTROL FOR RIBBON CRYSTAL PULLING FURNACES」)に対する優先権を主張し、該仮特許出願の開示は、その全体が本明細書において参照により援用される。本特許出願は、また、本特許出願と同日に出願された米国特許出願(名称「RIBBON CRYSTAL PULLING FURNACE AFTERHEATER WITH AT LEAST ONE OPENING」)にも関連し、この米国特許出願は、その全体が本明細書において参照により援用される。
本発明は、概して、リボン結晶引き上げ炉に関し、より具体的には、本発明は、リボン結晶引き上げ炉内の取り外し可能な絶縁部に関する。
本発明の実施形態に従って、リボン結晶引き上げ炉は、基部絶縁体と、基部絶縁体に取り外し可能に接続されたライナー絶縁体とを有する。ライナー絶縁体の少なくとも一部分はるつぼを含有するための内部を形成する。従って、ライナー絶縁体は使い捨てであり得、一方、基部絶縁体は再使用可能である(異なるライナー絶縁体が取り外し可能に取り付けられる)。
第1のライナーを取り外すし、基部絶縁体に第2のライナーを取り外し可能に接続する。
Claims (24)
- 基部絶縁体と、
該基部絶縁体に取り外し可能に接続されたライナー絶縁体であって、該ライナー絶縁体の少なくとも一部分はるつぼを収容するための内部を形成する、ライナー絶縁体と
を備えている、リボン結晶引き上げ炉。 - 前記ライナー絶縁体は、グラファイトを備えている、請求項1に記載のリボン結晶引き上げ炉。
- 前記ライナー絶縁体は、カーボンフォーム材料を備えている、請求項1に記載のリボン結晶引き上げ炉。
- 前記基部絶縁体は、セラミック材料を備えている、請求項1に記載のリボン結晶引き上げ炉。
- 前記基部絶縁体は、前記ライナー絶縁体の材料とは化学的かつ構造的に異なる材料から形成される、請求項1に記載のリボン結晶引き上げ炉。
- 前記基部絶縁体は、前記ライナー絶縁体と同じ材料から形成される、請求項1に記載のリボン結晶引き上げ炉。
- るつぼをさらに備え、前記ライナー絶縁体の少なくとも一部分は、該るつぼに隣接して位置を決められる、請求項1に記載のリボン結晶引き上げ炉。
- るつぼをさらに備え、前記ライナー絶縁体の少なくとも一部分は、該るつぼの下に位置を決められる、請求項1に記載のリボン結晶引き上げ炉。
- 前記基部絶縁体および前記ライナー絶縁体の上に位置を決められるアフターヒータをさらに備え、該アフターヒータは該基部絶縁体によって支持される、請求項1に記載のリボン結晶引き上げ炉。
- 基部絶縁体を提供することと、
該基部絶縁体にライナー絶縁体を取り外し可能に接続することであって、該ライナー絶縁体の少なくとも一部分はるつぼを収容するための内部を形成する、ことと
を包含する、リボン結晶成長方法。 - 前記ライナー絶縁体は、グラファイトを備えている、請求項10に記載の方法。
- 前記ライナー絶縁体は、カーボンフォーム材料を備えている、請求項10に記載の方法。
- 前記基部絶縁体は、セラミック材料を備えている、請求項10に記載の方法。
- 前記基部絶縁体は、前記ライナー絶縁体の材料とは化学的かつ構造的に異なる材料から形成される、請求項10に記載の方法。
- 前記基部絶縁体は、前記ライナー絶縁体と同じ材料から形成される、請求項10に記載の方法。
- るつぼを提供することをさらに包含し、前記ライナー絶縁体の少なくとも一部分は、該るつぼに隣接して位置を決められる、請求項10に記載の方法。
- るつぼを提供することをさらに包含し、前記ライナー絶縁体の少なくとも一部分は、該るつぼの下に位置を決められる、請求項10に記載の方法。
- 複数の紐孔を有するるつぼを有する炉を提供することであって、該炉はまた、第1の取り外し可能に接続されたライナーを有する基部絶縁体を有する、ことと、
該るつぼに溶融した材料を追加することと、
該紐孔に糸を通すことと、該溶融した材料がリボン結晶を成長させることと
を包含する、リボン結晶を成長させる方法。 - 前記第1のライナーを取り外すことと、
前記基部絶縁体に第2のライナーを取り外し可能に接続することと
をさらに包含する、請求項18に記載の方法。 - 前記ライナー絶縁体は、グラファイトまたはカーボンフォーム材料を含む、請求項18に記載の方法。
- 前記基部絶縁体は、セラミック材料を含む、請求項18に記載の方法。
- 前記基部絶縁体は、前記ライナー絶縁体と同じ材料から形成される、請求項18に記載の方法。
- 前記ライナー絶縁体の少なくとも一部分は、前記るつぼに隣接して位置を決められる、請求項18に記載の方法。
- 前記ライナー絶縁体の少なくとも一部分は、前記るつぼの下に位置を決められる、請求項18に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US94401707P | 2007-06-14 | 2007-06-14 | |
US60/944,017 | 2007-06-14 | ||
PCT/US2008/066865 WO2008154654A1 (en) | 2007-06-14 | 2008-06-13 | Removable thermal control for ribbon crystal pulling furnaces |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010529942A true JP2010529942A (ja) | 2010-09-02 |
JP5314009B2 JP5314009B2 (ja) | 2013-10-16 |
Family
ID=39643160
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010512375A Expired - Fee Related JP5314009B2 (ja) | 2007-06-14 | 2008-06-13 | リボン結晶引き上げ炉のための取り外し可能熱制御 |
JP2010512374A Pending JP2010529941A (ja) | 2007-06-14 | 2008-06-13 | 少なくとも1つの開口を有するリボン結晶引き上げ炉アフターヒータ |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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JP2010512374A Pending JP2010529941A (ja) | 2007-06-14 | 2008-06-13 | 少なくとも1つの開口を有するリボン結晶引き上げ炉アフターヒータ |
Country Status (9)
Country | Link |
---|---|
US (2) | US8328932B2 (ja) |
EP (2) | EP2152942A1 (ja) |
JP (2) | JP5314009B2 (ja) |
KR (2) | KR20100021630A (ja) |
CN (2) | CN101715496A (ja) |
CA (2) | CA2701825A1 (ja) |
MX (2) | MX2009013011A (ja) |
MY (2) | MY149060A (ja) |
WO (2) | WO2008157313A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110155045A1 (en) * | 2007-06-14 | 2011-06-30 | Evergreen Solar, Inc. | Controlling the Temperature Profile in a Sheet Wafer |
US20140083349A1 (en) * | 2012-09-21 | 2014-03-27 | Max Era, Inc. | Removable thermal control for ribbon crystal pulling furnaces |
CN106498488B (zh) * | 2016-10-28 | 2019-04-02 | 同济大学 | 同时生长多种掺杂CaF2晶体的装置及基于该装置的制备方法 |
CN107513767B (zh) * | 2017-09-25 | 2020-02-07 | 常州大学 | 一种适用于多晶硅垂直生长机构的温度梯度产生装置及使用方法 |
Citations (3)
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JPS5393183A (en) * | 1977-01-24 | 1978-08-15 | Mobil Tyco Solar Energy Corp | Apparatus for growing crystal from melt and cartridge used therefor |
JPS57111299A (en) * | 1980-03-10 | 1982-07-10 | Mobil Tyco Solar Energy Corp | Method of growing silicon crystal body |
WO2006082085A2 (de) * | 2005-02-03 | 2006-08-10 | Rec Scanwafer As | Verfahren und vorrichtung zum herstellen gerichtet erstarrter blöcke aus halbleitermaterialien |
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JPS6163593A (ja) | 1984-09-05 | 1986-04-01 | Toshiba Corp | 化合物半導体単結晶の製造装置 |
JPS62113793A (ja) | 1985-11-13 | 1987-05-25 | Toshiba Corp | 帯状シリコン結晶の製造装置 |
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JPH09175892A (ja) | 1995-10-27 | 1997-07-08 | Japan Energy Corp | 単結晶の製造方法 |
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-
2008
- 2008-06-13 CA CA2701825A patent/CA2701825A1/en not_active Abandoned
- 2008-06-13 WO PCT/US2008/066860 patent/WO2008157313A1/en active Application Filing
- 2008-06-13 WO PCT/US2008/066865 patent/WO2008154654A1/en active Application Filing
- 2008-06-13 US US12/138,799 patent/US8328932B2/en not_active Expired - Fee Related
- 2008-06-13 CN CN200880018611A patent/CN101715496A/zh active Pending
- 2008-06-13 KR KR1020097026951A patent/KR20100021630A/ko not_active Application Discontinuation
- 2008-06-13 US US12/138,791 patent/US8293007B2/en not_active Expired - Fee Related
- 2008-06-13 JP JP2010512375A patent/JP5314009B2/ja not_active Expired - Fee Related
- 2008-06-13 MY MYPI20095070A patent/MY149060A/en unknown
- 2008-06-13 MY MYPI20095068A patent/MY162987A/en unknown
- 2008-06-13 CN CN2008800186107A patent/CN101755076B/zh not_active Expired - Fee Related
- 2008-06-13 CA CA2701822A patent/CA2701822A1/en not_active Abandoned
- 2008-06-13 MX MX2009013011A patent/MX2009013011A/es unknown
- 2008-06-13 KR KR1020097026953A patent/KR20100019536A/ko not_active Application Discontinuation
- 2008-06-13 EP EP08770969A patent/EP2152942A1/en not_active Withdrawn
- 2008-06-13 EP EP08770964A patent/EP2152941A1/en not_active Withdrawn
- 2008-06-13 JP JP2010512374A patent/JP2010529941A/ja active Pending
- 2008-06-13 MX MX2009013010A patent/MX2009013010A/es unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS5393183A (en) * | 1977-01-24 | 1978-08-15 | Mobil Tyco Solar Energy Corp | Apparatus for growing crystal from melt and cartridge used therefor |
JPS57111299A (en) * | 1980-03-10 | 1982-07-10 | Mobil Tyco Solar Energy Corp | Method of growing silicon crystal body |
WO2006082085A2 (de) * | 2005-02-03 | 2006-08-10 | Rec Scanwafer As | Verfahren und vorrichtung zum herstellen gerichtet erstarrter blöcke aus halbleitermaterialien |
Also Published As
Publication number | Publication date |
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MY149060A (en) | 2013-07-15 |
US8328932B2 (en) | 2012-12-11 |
CN101755076B (zh) | 2013-07-17 |
WO2008154654A1 (en) | 2008-12-18 |
JP2010529941A (ja) | 2010-09-02 |
CN101755076A (zh) | 2010-06-23 |
WO2008157313A1 (en) | 2008-12-24 |
MX2009013011A (es) | 2010-01-20 |
US20080308035A1 (en) | 2008-12-18 |
KR20100019536A (ko) | 2010-02-18 |
CA2701822A1 (en) | 2008-12-18 |
US20080308034A1 (en) | 2008-12-18 |
EP2152941A1 (en) | 2010-02-17 |
JP5314009B2 (ja) | 2013-10-16 |
MX2009013010A (es) | 2010-01-20 |
US8293007B2 (en) | 2012-10-23 |
CA2701825A1 (en) | 2008-12-24 |
KR20100021630A (ko) | 2010-02-25 |
CN101715496A (zh) | 2010-05-26 |
EP2152942A1 (en) | 2010-02-17 |
MY162987A (en) | 2017-07-31 |
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