JP2010517291A5 - - Google Patents

Download PDF

Info

Publication number
JP2010517291A5
JP2010517291A5 JP2009547224A JP2009547224A JP2010517291A5 JP 2010517291 A5 JP2010517291 A5 JP 2010517291A5 JP 2009547224 A JP2009547224 A JP 2009547224A JP 2009547224 A JP2009547224 A JP 2009547224A JP 2010517291 A5 JP2010517291 A5 JP 2010517291A5
Authority
JP
Japan
Prior art keywords
doped semiconductor
situ doped
semiconductor nanoparticles
nanoparticles
situ
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009547224A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010517291A (ja
Filing date
Publication date
Priority claimed from US11/668,041 external-priority patent/US7494903B2/en
Application filed filed Critical
Publication of JP2010517291A publication Critical patent/JP2010517291A/ja
Publication of JP2010517291A5 publication Critical patent/JP2010517291A5/ja
Pending legal-status Critical Current

Links

JP2009547224A 2007-01-29 2007-12-13 ドープされたナノ粒子半導体電荷輸送層 Pending JP2010517291A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/668,041 US7494903B2 (en) 2007-01-29 2007-01-29 Doped nanoparticle semiconductor charge transport layer
PCT/US2007/025518 WO2008130396A2 (en) 2007-01-29 2007-12-13 Doped nanoparticle semiconductor charge transport layer

Publications (2)

Publication Number Publication Date
JP2010517291A JP2010517291A (ja) 2010-05-20
JP2010517291A5 true JP2010517291A5 (cg-RX-API-DMAC7.html) 2010-12-09

Family

ID=39668467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009547224A Pending JP2010517291A (ja) 2007-01-29 2007-12-13 ドープされたナノ粒子半導体電荷輸送層

Country Status (5)

Country Link
US (1) US7494903B2 (cg-RX-API-DMAC7.html)
EP (1) EP2126965A2 (cg-RX-API-DMAC7.html)
JP (1) JP2010517291A (cg-RX-API-DMAC7.html)
TW (1) TWI420572B (cg-RX-API-DMAC7.html)
WO (1) WO2008130396A2 (cg-RX-API-DMAC7.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7804238B2 (en) * 2004-08-31 2010-09-28 Nissan Motor Co., Ltd. Functional thin-film element, producing method thereof, and article using functional thin-film element
WO2007095061A2 (en) * 2006-02-09 2007-08-23 Qd Vision, Inc. Device including semiconductor nanocrystals and a layer including a doped organic material and methods
CN103333526A (zh) 2007-01-03 2013-10-02 内诺格雷姆公司 基于硅/锗的纳米颗粒油墨、掺杂型颗粒、用于半导体应用的印刷和方法
US20110031452A1 (en) * 2007-11-28 2011-02-10 Todd Krauss Nanoparticles Having Continuous Photoluminescence
US20110076839A1 (en) * 2009-09-29 2011-03-31 Xiaofan Ren Making films composed of semiconductor nanocrystals
US20110073835A1 (en) * 2009-09-29 2011-03-31 Xiaofan Ren Semiconductor nanocrystal film
US8575911B2 (en) * 2010-06-28 2013-11-05 Virginia Tech Intellectual Properties, Inc. Digital hybrid V2 control for buck converters
WO2012071107A1 (en) * 2010-11-23 2012-05-31 Qd Vision, Inc. Device including semiconductor nanocrystals & method
TW201405828A (zh) 2012-07-31 2014-02-01 E Ink Holdings Inc 顯示面板、薄膜電晶體及其製造方法
CN110475916A (zh) * 2017-03-21 2019-11-19 富士胶片株式会社 半导体粒子、分散物、薄膜、滤光器、建筑用部件及辐射冷却装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6126740A (en) * 1995-09-29 2000-10-03 Midwest Research Institute Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
US6918946B2 (en) * 2001-07-02 2005-07-19 Board Of Regents, The University Of Texas System Applications of light-emitting nanoparticles
JP2003286292A (ja) * 2002-01-28 2003-10-10 Mitsubishi Chemicals Corp 半導体超微粒子及びそれを含有してなる薄膜状成形体
US6878871B2 (en) 2002-09-05 2005-04-12 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
GB0225202D0 (en) * 2002-10-30 2002-12-11 Hewlett Packard Co Electronic components
US7294449B1 (en) * 2003-12-31 2007-11-13 Kovio, Inc. Radiation patternable functional materials, methods of their use, and structures formed therefrom
US7250461B2 (en) * 2004-03-17 2007-07-31 E. I. Du Pont De Nemours And Company Organic formulations of conductive polymers made with polymeric acid colloids for electronics applications, and methods for making such formulations
GB0409877D0 (en) * 2004-04-30 2004-06-09 Univ Manchester Preparation of nanoparticle materials
TWI406890B (zh) * 2004-06-08 2013-09-01 Sandisk Corp 奈米結構之沉積後包封:併入該包封體之組成物、裝置及系統
DE102004048230A1 (de) * 2004-10-04 2006-04-06 Institut für Neue Materialien Gemeinnützige GmbH Verfahren zur Herstellung von Nanopartikeln mit maßgeschneiderter Oberflächenchemie und entsprechenden Kolloiden
US7507618B2 (en) * 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
US8530589B2 (en) * 2007-05-04 2013-09-10 Kovio, Inc. Print processing for patterned conductor, semiconductor and dielectric materials

Similar Documents

Publication Publication Date Title
JP2010517291A5 (cg-RX-API-DMAC7.html)
JP2010519765A5 (cg-RX-API-DMAC7.html)
Bag et al. Aerosol‐Jet‐Assisted Thin‐Film Growth of CH3NH3PbI3 Perovskites—A Means to Achieve High Quality, Defect‐Free Films for Efficient Solar Cells
Chen et al. Fabrication of highly transparent and conductive indium–tin oxide thin films with a high figure of merit via solution processing
CN104150476B (zh) 化学气相沉积法制备石墨烯的无损伤转移方法
JP2010521061A5 (cg-RX-API-DMAC7.html)
Ge et al. Rapid electrochemical cleaning silver nanowire thin films for high-performance transparent conductors
WO2008130396A3 (en) Doped nanoparticle semiconductor charge transport layer
Lian et al. Highly conductive silver nanowire transparent electrode by selective welding for organic light emitting diode
JP2013527599A5 (cg-RX-API-DMAC7.html)
JP2013520844A5 (cg-RX-API-DMAC7.html)
JP2012067387A5 (ja) 電子装置、電子装置の作製方法、及びスパッタリングターゲット
Polat Genlik et al. All-solution-processed, oxidation-resistant copper nanowire networks for optoelectronic applications with year-long stability
JP2010028104A5 (ja) 配線基板及びその作製方法、並びに半導体装置及びその作製方法
JP2008547195A5 (cg-RX-API-DMAC7.html)
JP2011205089A5 (ja) 半導体膜の作製方法
JP2011521477A5 (cg-RX-API-DMAC7.html)
Di et al. Effects of ITO substrate hydrophobicity on crystallization and properties of MAPbBr3 single-crystal thin films
CN104843694A (zh) 一种多层石墨烯薄膜的制备方法
JP2013028864A5 (ja) 銀ナノ粒子を製造するプロセスおよび導電性要素を製造するプロセス
Li et al. As-grown graphene/copper nanoparticles hybrid nanostructures for enhanced intensity and stability of surface plasmon resonance
JP2012009432A5 (ja) 蓄電装置の作製方法
JP2009278072A5 (cg-RX-API-DMAC7.html)
Bob et al. Silver nanowires with semiconducting ligands for low-temperature transparent conductors
Damm et al. Factors influencing the conductivity of aqueous Sol (ution)–Gel-processed Al-doped ZnO Films