JP2010507097A - 赤外線マイクロボロメータセンサの伝導構造 - Google Patents
赤外線マイクロボロメータセンサの伝導構造 Download PDFInfo
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- JP2010507097A JP2010507097A JP2009533366A JP2009533366A JP2010507097A JP 2010507097 A JP2010507097 A JP 2010507097A JP 2009533366 A JP2009533366 A JP 2009533366A JP 2009533366 A JP2009533366 A JP 2009533366A JP 2010507097 A JP2010507097 A JP 2010507097A
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- microbolometer
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- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 18
- 230000008859 change Effects 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000003384 imaging method Methods 0.000 description 18
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 239000011162 core material Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000012806 monitoring device Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000011540 sensing material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J2005/202—Arrays
- G01J2005/204—Arrays prepared by semiconductor processing, e.g. VLSI
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
Description
R=ρ*t/(L*W) (1)
式中、ρはボロメータ層62の抵抗率を表し、tはボロメータ層62の厚さを表し、Lはボロメータ層62の長さを表し、Wはボロメータ層62の幅を表す。ボロメータ層62が薄膜層であってよく、例えば約0.01ミクロン厚であってよいことに留意されたい。
Gc *tc<Gb *tb (2)
式中、Gc及びGbは、第1の導電層64及び第2の導電層66並びにボロメータ層62の各材料の熱伝導率であり、tc及びtbは、第1の導電層64及び第2の導電層66並びにボロメータ層62の各厚さである。
Rtotal=(ρb *tb/(L*W))+(2*ρc *L/(W*tc)) (3)
かつ
(ρb *tb/(L*W))>(2*(ρc *L/(W*tc)) (4)
式中、(1)ρb及びρcは、ボロメータ層62並びに第1の導電層64及び第2の導電層66それぞれの電気抵抗率であり、(2)tb及びtcは、ボロメータ層62並びに第1の導電層64及び第2の導電層66それぞれの厚さであり、(3)W及びLは層の幅及び長さである。
Claims (20)
- 第1の導電層と、
第2の導電層と、
第1の導電層と第2の導電層との間のボロメータ層とを備えるマイクロボロメータ。 - 第1の導電層及び第2の導電層はそれぞれ、第1及び第2の導電層のそれぞれのエッジを超えて延出するリードを備える請求項1に記載のマイクロボロメータ。
- 第1及び第2の導電層は、略垂直の導電モードを与えるように構成される請求項1に記載のマイクロボロメータ。
- 第1及び第2の導電層並びに前記ボロメータ層は、以下の式
Gc *tc<Gb *tb
を使用して定義され、式中、Gc及びGbは、第1及び第2の導電層並びに前記ボロメータ層の各材料の熱伝導率であり、tc及びtbは第1及び第2の導電層並びに前記ボロメータ層それぞれの厚さである請求項1に記載のマイクロボロメータ。 - 前記マイクロボロメータ層は、第1の導電層と第2の導電層とに鋏まれる請求項1に記載のマイクロボロメータ。
- 前記マイクロボロメータ層の長さ及び幅は、第1及び第2の導電層の長さ及び幅と略同じである請求項1に記載のマイクロボロメータ。
- 前記ボロメータ層の厚さは少なくとも50ナノメートル(nm)である請求項1に記載のマイクロボロメータ。
- 第1及び第2の導電層はそれぞれ金属を含む請求項1に記載のマイクロボロメータ。
- 前記ボロメータ層は半導体材料を含む請求項1に記載のマイクロボロメータ。
- 第1及び第2の導電層の厚さは、前記ボロメータ層の厚さよりもかなり薄い請求項1に記載のマイクロボロメータ。
- 電子は、前記ボロメータ層を通って略垂直に流れると共に、第1及び第2の導電層のそれぞれにおいて略面内を流れる請求項1に記載のマイクロボロメータ。
- 第1及び第2の導電層の対向する隅に接点をさらに備える請求項1に記載のマイクロボロメータ。
- 前記ボロメータ層は赤外線放射を感知するように構成される請求項1に記載のマイクロボロメータ。
- 請求項1に記載のマイクロボロメータを備えるサーマルカメラ。
- 前記マイクロボロメータは赤外線(IR)放射を感知するように構成される請求項15に記載のサーマルカメラ。
- 前記マイクロボロメータは非冷却式装置である請求項15に記載のサーマルカメラ。
- 電磁放射を検出する方法であって、
熱感知膜で電磁放射を受けること、及び
略垂直な導電モードを使用して、前記受けた電磁放射に基づいてボロメータ材料の抵抗変化を感知することを含む方法。 - 導電層の間に前記熱感知膜を画定する前記ボロメータ材料を与えることをさらに含む請求項18に記載の方法。
- 前記受けた電磁放射に基づいて熱画像を形成することをさらに含む請求項18に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/583,210 US7633065B2 (en) | 2006-10-19 | 2006-10-19 | Conduction structure for infrared microbolometer sensors |
PCT/US2007/022206 WO2008143632A1 (en) | 2006-10-19 | 2007-10-17 | Conduction structure for infrared microbolometer sensors |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010507097A true JP2010507097A (ja) | 2010-03-04 |
JP2010507097A5 JP2010507097A5 (ja) | 2010-10-14 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009533366A Pending JP2010507097A (ja) | 2006-10-19 | 2007-10-17 | 赤外線マイクロボロメータセンサの伝導構造 |
Country Status (9)
Country | Link |
---|---|
US (1) | US7633065B2 (ja) |
EP (1) | EP2076745A1 (ja) |
JP (1) | JP2010507097A (ja) |
CN (1) | CN101627290B (ja) |
AR (1) | AR063346A1 (ja) |
AU (1) | AU2007353817B2 (ja) |
CA (1) | CA2666711C (ja) |
HK (1) | HK1135766A1 (ja) |
WO (1) | WO2008143632A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011056610A1 (de) * | 2011-12-19 | 2013-06-20 | Pyreos Ltd. | Infrarotlichtsensorchip mit hoher Messgenauigkeit und Verfahren zum Herstellen des Infrarotlichtsensorchips |
CN108458789A (zh) * | 2018-04-20 | 2018-08-28 | 国家纳米科学中心 | 一种基于硫化钽薄膜的测辐射热计及其制备方法和用途 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05507144A (ja) * | 1990-04-26 | 1993-10-14 | オーストラリア連邦 | 半導体膜ボロメータ熱性赤外検出器 |
JPH0894434A (ja) * | 1994-09-27 | 1996-04-12 | Matsushita Electric Works Ltd | 赤外線検出素子 |
JPH10111178A (ja) * | 1996-10-08 | 1998-04-28 | Nikon Corp | 熱型赤外線センサ及びこれを用いたイメージセンサ |
JP2001174336A (ja) * | 1999-12-20 | 2001-06-29 | Sharp Corp | 感温材料膜およびその製造方法 |
JP2006278478A (ja) * | 2005-03-28 | 2006-10-12 | Osaka Univ | 赤外線センサ用薄膜、その製造方法、およびそれを用いた赤外線センサ |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5021663B1 (en) * | 1988-08-12 | 1997-07-01 | Texas Instruments Inc | Infrared detector |
FR2752299B1 (fr) * | 1996-08-08 | 1998-09-11 | Commissariat Energie Atomique | Detecteur infrarouge et procede de fabication de celui-ci |
US5945673A (en) * | 1996-08-30 | 1999-08-31 | Raytheon Company | Thermal detector with nucleation element and method |
US6087661A (en) * | 1997-10-29 | 2000-07-11 | Raytheon Company | Thermal isolation of monolithic thermal detector |
US6201243B1 (en) * | 1998-07-20 | 2001-03-13 | Institut National D'optique | Microbridge structure and method for forming the microbridge structure |
JP3303786B2 (ja) * | 1998-08-13 | 2002-07-22 | 日本電気株式会社 | ボロメータ型赤外線センサ |
DE69834753T2 (de) * | 1998-11-30 | 2007-05-31 | Daewoo Electronics Corp. | Infrarotempfindliches bolometer |
FR2802338B1 (fr) * | 1999-12-10 | 2002-01-18 | Commissariat Energie Atomique | Dispositif de detection de rayonnement electromagnetique |
US6777681B1 (en) | 2001-04-25 | 2004-08-17 | Raytheon Company | Infrared detector with amorphous silicon detector elements, and a method of making it |
FR2861172B1 (fr) * | 2003-10-15 | 2006-06-02 | Ulis | Detecteur bolometrique, dispositif de detection infrarouge mettant en oeuvre un tel detecteur bolometrique et procede de fabrication de ce detecteur |
-
2006
- 2006-10-19 US US11/583,210 patent/US7633065B2/en not_active Expired - Fee Related
-
2007
- 2007-10-17 AU AU2007353817A patent/AU2007353817B2/en not_active Ceased
- 2007-10-17 CA CA2666711A patent/CA2666711C/en not_active Expired - Fee Related
- 2007-10-17 WO PCT/US2007/022206 patent/WO2008143632A1/en active Application Filing
- 2007-10-17 EP EP07875007A patent/EP2076745A1/en not_active Withdrawn
- 2007-10-17 CN CN200780038817.6A patent/CN101627290B/zh not_active Expired - Fee Related
- 2007-10-17 JP JP2009533366A patent/JP2010507097A/ja active Pending
- 2007-10-19 AR ARP070104642A patent/AR063346A1/es unknown
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2010
- 2010-03-04 HK HK10102298.3A patent/HK1135766A1/xx not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05507144A (ja) * | 1990-04-26 | 1993-10-14 | オーストラリア連邦 | 半導体膜ボロメータ熱性赤外検出器 |
JPH0894434A (ja) * | 1994-09-27 | 1996-04-12 | Matsushita Electric Works Ltd | 赤外線検出素子 |
JPH10111178A (ja) * | 1996-10-08 | 1998-04-28 | Nikon Corp | 熱型赤外線センサ及びこれを用いたイメージセンサ |
JP2001174336A (ja) * | 1999-12-20 | 2001-06-29 | Sharp Corp | 感温材料膜およびその製造方法 |
JP2006278478A (ja) * | 2005-03-28 | 2006-10-12 | Osaka Univ | 赤外線センサ用薄膜、その製造方法、およびそれを用いた赤外線センサ |
Also Published As
Publication number | Publication date |
---|---|
CN101627290A (zh) | 2010-01-13 |
EP2076745A1 (en) | 2009-07-08 |
CA2666711A1 (en) | 2008-11-27 |
AR063346A1 (es) | 2009-01-21 |
CN101627290B (zh) | 2015-04-01 |
AU2007353817A1 (en) | 2008-11-27 |
US20080093553A1 (en) | 2008-04-24 |
HK1135766A1 (en) | 2010-06-11 |
CA2666711C (en) | 2015-01-06 |
WO2008143632A1 (en) | 2008-11-27 |
AU2007353817B2 (en) | 2012-04-05 |
US7633065B2 (en) | 2009-12-15 |
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